REV. 1.

2 FS8205A-DS-12_EN AUG 2009

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Datasheet

FS8205A

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Dual N-Channel Enhancement Mode Power MOSFET
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 FS8205A

Fortune Semiconductor Corporation

富晶電子股份有限公司
28F., No.27, Sec. 2, Zhongzheng E. Rd.,
Danshui Town, Taipei County 251, Taiwan
Tel.：886-2-28094742
Fax：886-2-28094874
www.ic-fortune.com

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This manual contains new product information. Fortune Semiconductor Corporation reserves the
rights to modify the product specification without further notice. No liability is assumed by Fortune
Semiconductor Corporation as a result of the use of this product. No rights under any patent
accompany the sale of the product

Rev. 1.2 2/6

 FS8205A

1. Features
1.1 Low on-resistance
1.1.1 RDS(ON) = 25 mΩ MAX. (VGS = 4.5V, ID = 4A)

1.1.2 RDS(ON) = 35 mΩ MAX. (VGS = 2.5V, ID = 3A)

2. Applications
„ Li-ion battery management applications

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3. Ordering Information

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Product Number Description Package Type Quantity/Reel
FS8205A TSSOP8 package version TSSOP-8 3,000

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4. Pin Assignment
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5. Absolute Maximum Ratings

Symbol Parameter Rating Units
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VDS Drain-Source Voltage 20 V

VGS Gate-Source Voltage ±12 V
ID @TA = 25℃ Continuous Drain Current3 6 A
ID @TA = 70℃ Continuous Drain Current3 5 A
IDM Pulsed Drain Current1 25 A
PD @TA = 25℃ Total Power Dissipation 1 W
Linear Derating Factor 0.008 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
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6. Thermal Data
Symbol Parameter Value Unit
Rthj-a Thermal Resistance Junction-ambient3 Max. 125 ℃/W

Rev. 1.2 3/6

 FS8205A

7. Electrical Characteristics
Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )
Symbol Parameter Test Conditions Min. Typ. Max. Units
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS = 4.5V, ID = 4A - 21 25 mΩ
VGS = 2.5V, ID = 3A - 27 35 mΩ
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.5 - 1.0 V

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Drain-Source Leakage Current (Tj = 25℃) VDS =20V, VGS = 0V - - 1 uA
IDSS
Drain-Source Leakage Current (Tj = 70℃) VDS =20V, VGS = 0V - - 25 uA
VGS = ±10V ±10

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IGSS Gate-Source Leakage - - uA

8. Source-Drain Diode

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Symbol Parameter Test Conditions Min. Typ. Max. Units
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IS Continuous Source Current (Body Diode) VD = VG = 0V, VS = 1.2V - - 0.83 A
VSD Forward On Voltage2 Tj = 25℃, IS = 1.25A, VGS = 0V - - 1.2 V
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1. Pulse width limited by Max. junction temperature.
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2. Pulse width ≦ 300us, duty cycle ≦ 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board；208℃/W when mounted on Min. copper
pad.
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Rev. 1.2 4/6

 FS8205A

9. Typical Characteristics

On-Region characteristics @ Ta=25Deg On-Region characteristics @ Ta=125Deg

25 25

20 20
Id, Drain Current ( A )

Id, Drain Current ( A )

2.0V 2.0V
15 15
2.5V 2.5V
3.0V 3.0V
10 10
3.5V 3.5V

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4.0V 4.0V
5 5
4.5V 4.5V

0 0

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0 0.5 1 1.5 2 0 0.5 1 1.5 2
-5 -5

Vds, Drain to Source Voltage ( V ) Vds, Drain to Source Voltage ( V )

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
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On-Resistance Variation with Temperature Gate Threshold Voltage Temperature Coefficient
Vgs=4.5V, Ids=4A Vgs=Vdg, Ids=250uA
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1.4 1.4
Drain - Source On-Resistance

1.2 1.2
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Rds(on) - Normalized

Threshold Voltage

1 1
Vth - Normalized

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0 0
-50 0 50 100 150 -50 0 50 100 150

Temperature ( Deg ) Temperature ( Deg )

Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with

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Temperature

Forward Characteristic of Rev erse Diode

2.5

1.5
Is (A)

Ta=25Deg
Ta=125Deg
1

0.5
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-0.3 0.2 0.7 1.2

Vsd, Soucre to Drain Voltage ( V )

Fig 5. Forward Characteristic of Reverse Diode

Rev. 1.2 5/6

 FS8205A

10. Package Information

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11. Revision History

Version Date Page Description
1.0 2009/02/10 - Version 1.0 released
1.1 2009/04/28 3~4 Rds25 TYP 25mohm MAX 32mohm
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Rds45 TYP 20mohm MAX 25mohm

ID @TA = 25℃ 6A
ID @TA = 70℃ 5A
ID pulse 300μS 25A
1.2 2009/08/04 3~4 Rds25 TYP 27mohm MAX 35mohm
Rds45 TYP 21mohm MAX 25mohm
Rds25 ID：3A
Rds45 ID：4A
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Rev. 1.2 6/6