CommIC09 PDF
CommIC09 PDF
台大電子所 李致毅教授
Professor Jri Lee
National Taiwan University
關於這堂課…
三不
不點名, 不小考, 不交作業
成績計算
TBD
上課時間地點
Monday 234, 博理112
助教
吳克中/王懷德, 博理R424
參考書籍
“Design of Integrated Circuits for Optical communications”(30%)
“RF Microelectronics” (30%)
期刊論文/發明專利/吾所獨見而創獲者(40%)
關於這堂課…
授課內容
Wireline: TIA, LA, MUX/DEMUX, Equalizer, CDR
Wireless: LNA, PA, Mixer, Frequency Synthesizer
General: Oscillator, Frequency Divider, PLL
授課方式
投影片+ 板書
專題演講 (3~4次)
Nasdaq Index over the Past Decade
sin( πfTb ) 2
x (t ) = ∑ bk p(t − kTb ) Sx (f ) = Tb [ ]
k πfTb
Length = 23 −1
m
A sequence of length 2 −1 contains at most
m-bit runs.
Longer sequence can be obtained by extending
the number of shift registers.
PRBS 215 − 1: y15 ⊕ y14 ⊕ 1 ,
PRBS 223 − 1: y23 ⊕ y18 ⊕ 1 .
Spectrum of PRBS
General Considerations
Open-Loop TIAs
Feedback TIAs
High Performance TIAs
Case Study
Jitter Due to Bandwidth Limitation
−Tb T1 − T2 −τ −Tb
T1 = τ ln2 T2 = τ ln[2(1 − exp )] = ln(1 − exp )
τ Tb Tb τ
ISI Due to Bandwidth Limitation
ΔV −Tb
ISI = = exp
V0 τ
∞ 1 − x2 VPP
Pc,tot = ∫ exp dx = Q ( )
V0 σ n
2π 2 2σ n
∞ 1 − u2 1 − x2
Q( x ) = ∫ exp du ≈ exp for x > 3
x
2π 2 x 2π 2
−12
For a BER of 10 , SNR needs to be around 14.
Noise issue becomes more severe for low
supply-voltage designs.
Single-Register TIAs
RT(Transimpedance Gain) = RL
kT
In,in = 2
2
RL CD
1
Data Rate =
2πRLCD
Gain > 1 kΩ
Peaking < 2 dB
Challenges:
High Gain High Bandwidth
Large Input Range Good PSRR
Low Noise Reasonable Power
Open-Loop TIAs
RT = RD R T = RC
1 RD 1 RC
Rin ≈ + Rin ≈ +
gm + gmb (gm + gmb )ro gm gmro
1 1
I 2
n,in,tot = 4kTγ ( gm1ωp,out + gm2 ωp,in )
4 2
gm1 + gmb1
ωp,in =
Cin
1
ωp,out =
RDCout
RD Reasonable
RT =
1 + RD gmF Gain
Rin,open
Rin =
1 + RD gmF Impedance
Rout,open Matching
Rout =
1 + RD gmF
ARF
RT = −
A + 1+ RFCD s
A
f−3dB =
2πRFCD
Ideal
Opamp
4kT Vn,2A
In,2 in = + 2
RF RF
(when CD = 0)
A0
A(s ) =
1 + s ω0
A0 ω0
CD
RT =
RFCD + 1 ω0 ( A0 + 1)ω0
s +
2
s+
RFCD ω0 RFCD
gm1RD
RT = RF
1 + gm1RD
RF
Rin =
1 + gm1RD
1 gm2
Rout =
1 + gm1RD
4kT 4kT γ 1 γ
In,2 in = + 2 ( + 2 + 2 2
)
RF RF gm1 gm1RD gm2 gm1RD
∂Vout 1
=
∂VDD 1 + gm1RD
‘‘Pseudo’’ Differential
Issues:
Unequal gain and phase shift at high frequencies.
Input noise current 2 times higher.
Generating only “pseudo” differential output.
Single-Ended to Differential Conversion
Average of Vx
Vout gmRF − 1
=− R D ≈ −RF
Vin gmRD + 1
RF + RD
Rin =
gmRD + 1
1
Rout = RD
gm
Vout s + 2ζωn ωn
= −gmRD 2
1 Vin s + 2ζωn + ωn2 2π
f−3dB =
2πRDCL 1.79
f−3dB = for ζ = 1
2πRDCL 2
Automatic Gain Control
Since
1 RFCD ω0
ζ=
2 A0 + 1
system may become unstable as RF goes down.
⇒ Need to reduce A0 so as to maintain a
relatively constant ζ.
Case Study (I)
Introduction
Design Challenges
Loss of Signal Detection
Broadband Techniques
Case Study
General Considerations
Requirement
High Gain (40~60dB)
Broad Bandwidth ( ≥ 0.7× Data Rate)
Low Noise (300 ~ 400 μVrms)
Small Offset Voltage
Well-Behaved Response to Large Signals
Challenges of Noise
A
Vos,out = Vos,in
1 + AGmFR1
Vos,in
≈
GmFR1
1
ω0 =
RoutCL
BWtot = ω 0 21/n − 1
GBW
⇒ BWtot = 1/n
21/n − 1
Atot
⇒ nopt = 2 lnAtot
3 3
Vout (t ) = A1(α 1Vm + α 3Vm3 )sin(ωt + θ1 ) − A3 α 3Vm3 sin(3ωt + θ 2 )
4 4
Vout s + 2ζω n ωn
1 = −gmRD 2
f−3dB = Vin s + 2ζω n s + ωn2 2ζ
2πRDCL
1.79
f−3dB = for ζ = 1/ 2
2πRDCL
Most Efficient method; no extra power consumption.
Area consuming (although has been moderated in
advanced technology).
Broadband Technique (II): Miller Capacitor Cancellation
Double Triple
Broadband Techniques (V): f T Doubler
Vout gm (1 + R sC s s ) RD
=
Vin g R 1 + sCL RD
R sC s s + 1 + m s
2
Z 0L l
Av = gm n ≈ πfT
2 v
Voltage gain is proportional to physical length l.
With ideal T-lines, distributed amplifiers would
achieve infinite gain with infinite bandwidth!
Modified Distributed Amplifiers
Introduction
Pre-Emphasis and Drivers
Post-Emphasis and Equalizers
Design of Building Blocks
Case Study
c
d
ISI occurs!
1
1- α
Amplitude
100 % Eye
Opening
No Jitter
0
-α
0 0.5 1
Time (ns)
z (t ) = x (t ) − αx (t − Tb ) H (s ) = 1 − αe − sTb
[
Z (s ) = X (s ) 1 − αe − sTb ] H (s ) = 1 + α 2 − 2αcosωTb
Multi-Tap FIR Filter with Zero-Forcing
⎡ x0 x -1 L x - N L x - 2 N -1 x - 2N ⎤ ⎡ a- N ⎤ ⎡0⎤
⎢ ⎥⎢ ⎥
⎢ x1 x0 L x - N +1 L x - 2 N x -2N +1 ⎥ ⎢a-N +1 ⎥ ⎢⎢0⎥⎥
⎢ M M ⎥⎢ M ⎥ ⎢ M ⎥
⎢ ⎥⎢ ⎥ ⎢ ⎥
⎢ xN x N -1 L x0 L x - N -1 x - N ⎥ ⎢ a0 ⎥ = ⎢ 1⎥
⎢ M M ⎥⎢ M ⎥ ⎢ M ⎥
⎢ ⎥⎢ ⎥ ⎢ ⎥
⎢ x 2 N -1 x 2N - 2 L x N -1 L x -2 x -1 ⎥ ⎢ aN -1 ⎥ ⎢0⎥
⎢x x 2 N -1 L L x 0 ⎥⎦ ⎢⎣ aN ⎥⎦ ⎢⎣0⎥⎦
⎣ 2N xN x -1
[Choi, 04]
Dual loop architecture to balance low- and
high-frequency parts.
Case Study II
[Gondi, 05]
Case Study II
[Gondi, 05]
Oscillators (I)
Barkhausen Criteria
Ring Oscillators
LC Oscillators
Colpitts Oscillator
Tuning Techniques
BarkhausenCriteria
A03
H (s ) =
(1 + s )3
ω0
A0 = gmRD , ω0 = 1
RDCL
⇒ tan-1(ωosc
ω0 ) = 60°
ωosc = 3ω 0
A0
⇒ =1
1+
ω 2
osc
ω20
A0 ≥ 2
A0 − 2 A 3
Vout ∝ exp( ω0t ) cos( 0 ω 0t )
2 2
Large Signal Analysis
A0 3ω0
≠ 6TD
2
A04
H (s ) =
(1 + s ) 4
ω0
ωosc = ω0
A0 ≥ 2
Overcome voltage
headroom issue.
Definitions
ω0
(i) Q =
Δω
Energy Stored
(ii) Q = 2π
Energy Dissipated Per Cycle
ω0 dφ
(iii) Q = ⋅
2 dω
LS = LP
ωLS
RS = RP = Q ⋅ ωLP
Q
C1 C2 2
gmRp = (1 + ) ≥ 4 (@ C1 = C2 )
C2 C1
1
ωR = (if Cp included)
CC
Lp (Cp + 1 2 )
C1 + C2
Oscillates under proper conditions.
Voltage-Controlled Oscillator
Tradeoffs:
Center Frequency Tuning Linearity
Tuning Range Output Amplitude
Power Dissipation Supply Rejection
Phase Noise
Ring VCO – Output Swing Control
Stability issue?
Large tuning range
Oscillation Frequency of Simple LC Oscillator
Rp = Q ⋅ ωosc L = 1
gm
1
ωosc =
Cp CGS
2L( + )
2 2
Oscillation Frequency of LC Oscillator
If Cp is insignificant compared with CGS, then
1
ωosc ≈
LCGS
1
=
1
CGS
gmQωosc
= QωT ωosc
⇒ ωosc = Q ⋅ ωT
General Considerations
Inductor Designs
Varactor Designs
Quadrature Oscillators
Distributed Oscillators
Basic LC Oscillators
Advantages:
Large Swing Low Supply Voltage
Higher Frequency Lower Phase Noise
Operation Theory
Barkhausen Criteria:
H ( jω) ≥ 1
∠H(jω) = 360°
Ohm Loss
⇒ Arises from the series resistance of the metal wire:
comprising the spiral.
⇒ Modern VLSI technologies provide a sheet
resistance of 20 to 70 mΩ/ .
Skin Effect
⇒ Current tends to concentrate on the edge at high
frequencies, changing the magnetic flux and the
inductance.
⇒ Inductor Q decreases as well.
Losses due to Capacitive and Magnetic Coupling
Ground Shield
Differential Structures
Stacked Structures:
MOS Varactor
Reverse-Biased pn Junction
C0
C var =
VR
(1 + )m
φB
Approximately 2-2.5 times variation range.
VCO with MOS Varactors
(−αY + X ) H (s ) = X
( −α X + Y ) H ( s ) = Y
⇒ X 2 +Y 2 = 0
⇒ X = ± jY , ∠H (s ) = ± tan-1α
Quadrature LC VCO Analysis
πfT
AV =
2fosc
πfT
fosc =
2
(Kim & Kim, ISSCC ’00) (Rogers & Long, ISSCC ’02)
[Lee, ’03]
Case Study (I)
Case Study (II)
[Savoj, ’01]
Frequency Dividers
Introduction
Static Dividers
Miller Dividers
Injection Dividers
Prescalers
Case Study
Full-Rate Divider Applications
Full-Rate Divider Applications
Wireless Frontend
+ y = β yA cos ωint
dy
R1C1
dt
⎛ βA ⎞
sin ωint ⎟⎟
t
y (t ) = y (0) exp ⎜⎜ − +
⎝ R1C1 R1C1ωin ⎠
3f0 f
The LPF must (1) filter out , (2) preserve 0 .
2 2
f0,max 3f0,min
≅ fc and ≅ fc
2 2
2fc
< f0 < 2fc
3
Dynamic Divider with Bandpass Load
Frequency Range for Correct Division
Intuitive Understanding of Bandpass Division
f0 A inj 4
Locking range ≅ ⋅ ⋅
2Q A osc 3π
Modified Injection-Locked Divider
1
2π ⋅ 2f0 =
LCP
÷15/16 Divider
Case Study
[Lee, ‘07]
Mixers, Multiplexers, and Demultiplexers
Mixers
• Passive and Active
• Bipolar and CMOS
Muxes
• 2-to-1
• N-to-1
Demuxes
Case Study
Performance Metrics of Mixers
NF 8-12 dB
IIP3 0-5 dBm
Rin 50 Ω
(Standalone)
Gain 10-15 dB
LO-RF Isolation
LO-IF Isolation
Single Double
Noise Lower Higher
LO-IF Feedthrough Higher Lower
Even-Order Distortion Higher Lower
Conversion Gain Lower Higher(2x)
Bipolar Mixers
2
AV = gm1 ⋅ RC ⋅
π
Linearity
Power Consumption Incorporating single-ended/
differential conversion.
LO-IF Feedthrough
LO-RF Feedthrough
Linearization Technique
V0
τ [ ln(V0 − VS ) − ln ]
2
Output Data Cleanup with Flipflop
[Ishii, JSSC02]
Tree structure. InP technology.
Timing requirement relaxes as speed goes down.
Case Study (II)
[Tanabe, JSSC’01]
Phase-Locked Loops
Introduction
Simple PLLs
Charge-Pump PLLs
Nonidealities
Applications
Phase-Locked Loops and their Versatileness
ω out = ωin
Φ out
H (s ) open = (s ) open
Φ in
1 K VCO
= K PD
s s
1+
ωLPF
K PD K VCO
H (s ) closed = ωn = ωLPFK PD K VCO
s2
ωLPF + s + K PD K VCO
ω n2 1 ωLPF
= ζ=
s 2 + 2ζω n s + ωn2 2 K PDK VCO
1
ζω n = ω LPF
2
Φ out I ⎛ 1 ⎞ K VCO
(s ) open = P ⎜⎜ Rp + ⎟⎟
Φ in 2π ⎝ CP s ⎠ s
2ζωn s + ωn2
H (s ) =
s 2 + 2ζωn s + ωn2
I P K VCO
ωn =
2πCP
RP I PCP K VCO
ζ=
2 2π
s1,2 = −ζωn ± ωn ζ 2 − 1
ζ = cosψ
[Lee, ISSCC07]
Introduction
Integer-N Synthesizer
Fractional-N Synthesizer
• Accumulator-Based
• Σ−Δ Modulated
Direct Digital Synthesizer
Case Study
Integer-N Synthesizers
Introducing Divide Ratio M
I p K VCO
(RpCp s + 1)
2πC p
H (s) =
I p K VCO I p K VCO
s +
2
Rp s +
2π M 2 πC p M
Ip
K VCO Rp I pC p K VCO
4 πM ωn = ,ξ =
2πC p M 2 2π M
Decay τ = (ξωn ) =
-1
Rp IpK VCO
1
Settling time ∝ ⇐ critical in channel selection.
ξωn
Closed-loop synthesizer fails to serve in special
applications such as frequency hopping and instant
locking.
Reference Feedthrough and Sidebands
∼ωn ∼ωn
Φ out s2
(s) = 2
Φ VCO s + 2ξωn + ωn2
Fractional-N
• Modulating the divide
ratio such that the
averaged modulus equals
N+k, where 0 ≤ k ≤ 1
Example:
fref = 1 MHz, N = 10
⇒ fout = 10.1 MHz
Fractional-N Synthesizers
Accumulator-Based Fractional-N
N=4.25
=(3*4+1*5)/4
[Courtesy, M. Perrott]
2
fout 2
Snf (f ) ≅ 4 Q (f )
N
⇒ The PSD of frequency
quantization noise resembles
that of the quantization noise.
Σ-Δ Modulator
Σ−Δ Modulator provides a unity gain path and well-
defined noise profile.
Y (z ) = U (z ) + R (z )
= X (z ) + [H (z ) − 1]E (z ) + R (z )
= X (z ) + [H (z ) − 1]R (z ) + R (z )
= X (z ) + H (z )R (z )
Well-defined
shaping for
different m.
First-Order Σ-Δ Modulator
[Courtesy, M. Perrott]
Second-Order Σ-Δ Modulator
[Courtesy, M. Perrott]
Third-Order Σ-Δ Modulator
[Courtesy, M. Perrott]
Noise Analysis on Σ−Δ Frequency Synthesizers
Advantages: Drawbacks:
• Instant switching (f and φ) • Speed
• Ultra low phase noise ( ≈ Xtal ) • Waveform distortion
• Direct modulation
General Realization of DDFS
Highly distorted
[Yang et al, JSSC04]
fck = 800MHz, fout = 328MHz
Case Study
3-bit Prescaler
[Tiebout, ISSCC04]
General Considerations
Linear Phase Detector
Binary Phase Detector
CDR Architecture
Edge Detection
Drawbacks:
Continue to increase or decrease the VCO
control voltage even when no data edge is
present ⇒ large jitter.
Large skews may cause improper sampling.
Finite capture range (lack of frequency
acquisition loop).
Hogge Phase Detector
[Hogge, ’85]
Linear operation.
Complete pulses must be generated within
approximately 1/4 of a bit period.
Suitable for low to moderate frequency.
Non-idealities of Hogge Phase Detector
[Alexander, ’76]
Binary operation simplifies the phase comparison and
increases the speed.
Abruptly toggling between two states rather than gently
waggling around zero.
Complete CDR using Alexander PD
C ⊕ D serves as a reference.
Clock duty cycle plays crytical roles (must be 50%).
Half Rate Alexander Phase Detector
Adjustable Parameters
[Nedovic, ISSCC07]
3x over sampling.
Quarter-rate VCO.