2N4921G, 2N4922G,

2N4923G

Medium-Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications. www.onsemi.com

Features
1.0 AMPERE
• Low Saturation Voltage
GENERAL PURPOSE
• Excellent Power Dissipation
POWER TRANSISTORS
• Excellent Safe Operating Area
• Complement to PNP 2N4920G
40−80 VOLTS, 30 WATTS
• These Devices are Pb−Free and are RoHS Compliant** COLLECTOR
2, 4
MAXIMUM RATINGS
Rating Symbol Value Unit 3
Collector−Emitter Voltage VCEO Vdc BASE
2N4921G 40
2N4922G 60 1
2N4923G 80
EMITTER
Collector−Emitter Voltage VCB Vdc
2N4921G 40
2N4922G 60
2N4923G 80
Emitter Base Voltage VEB 5.0 Vdc
TO−225
Collector Current − Continuous (Note 1) IC 1.0 Adc CASE 77−09
Collector Current − Peak (Note 1) ICM 3.0 Adc STYLE 1

Base Current − Continuous IB 1.0 Adc

1 2
Total Power Dissipation PD 3
@ TC = 25_C 30 W
Derate above 25_C 0.24 mW/_C MARKING DIAGRAM
Operating and Storage Junction TJ, Tstg –65 to +150 _C
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the YWW
device. If any of these limits are exceeded, device functionality should not be 2
assumed, damage may occur and reliability may be affected. N492xG
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6). Y = Year
WW = Work Week
THERMAL CHARACTERISTICS (Note 2) 2N492x = Device Code
Characteristic Symbol Max Unit x = 1, 2, or 3
G = Pb−Free Package
Thermal Resistance, Junction−to−Case RqJC 4.16 _C/W
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data. ORDERING INFORMATION
Device Package Shipping
2N4921G TO−225 500 Units / Box
(Pb−Free)
2N4922G TO−225 500 Units / Box
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques 2N4923G TO−225 500 Units / Box
Reference Manual, SOLDERRM/D. (Pb−Free)

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

January, 2017 − Rev. 15 2N4921/D
 2N4921G, 2N4922G, 2N4923G

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc
(IC = 0.1 Adc, IB = 0)
2N4921G 40 −
2N4922G 60 −
2N4923G 80 −
Collector Cutoff Current ICEO mAdc
(VCE = 20 Vdc, IB = 0)
2N4921G − 0.5
(VCE = 30 Vdc, IB = 0)
2N4922G − 0.5
(VCE = 40 Vdc, IB = 0)
2N4923G − 0.5
Collector Cutoff Current ICEX mAdc
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc) − 0.1
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C − 0.5
Collector Cutoff Current ICBO mAdc
(VCB = Rated VCB, IE = 0) − 0.1

Emitter Cutoff Current IEBO mAdc

(VEB = 5.0 Vdc, IC = 0) − 1.0

ON CHARACTERISTICS
DC Current Gain (Note 3) hFE −
(IC = 50 mAdc, VCE = 1.0 Vdc) 40 −
(IC = 500 mAdc, VCE = 1.0 Vdc) 30 150
(IC = 1.0 Adc, VCE = 1.0 Vdc) 10 −
Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc
(IC = 1.0 Adc, IB = 0.1 Adc) − 0.6

Base−Emitter Saturation Voltage (Note 3) VBE(sat) Vdc

(IC = 1.0 Adc, IB = 0.1 Adc) − 1.3

Base−Emitter On Voltage (Note 3) VBE(on) Vdc

(IC = 1.0 Adc, VCE = 1.0 Vdc) − 1.3

SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, f = 100 kHz) − 100

Small−Signal Current Gain hfe −

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.

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 2N4921G, 2N4922G, 2N4923G

40

PD, POWER DISSIPATION (WATTS)

30

20

10

0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

APPROX
TURN-ON PULSE
+11 V
t1 VCC
Vin RC

Vin
VBE(off) RB
Cjd<<Ceb
t3
APPROX -4.0 V
SCOPE
+11 V t1 ≤ 15 ns
100 < t2 ≤ 500 ms
Vin t3 ≤ 15 ns
APPROX 9.0 V DUTY CYCLE ≈ 2.0%
t2
RB and RC varied to
TURN-OFF PULSE obtain desired
current levels

Figure 2. Switching Time Equivalent Circuit

5.0
VCC = 30 V IC/IB = 10, UNLESS NOTED
3.0 IC/IB = 20 TJ = 25°C
2.0 TJ = 150°C
VCC = 60 V
1.0
t, TIME (s)
μ

0.7
0.5 tr
VCC = 30 V
0.3 td
0.2 VCC = 60 V
VBE(off) = 2.0 V
0.1 VCC = 30 V
0.07 VBE(off) = 0
0.05
10 20 30 50 70 100 200 300 500 700 1000
IC, COLLECTOR CURRENT (mA)

Figure 3. Turn−On Time

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 2N4921G, 2N4922G, 2N4923G

1.0
0.7 D = 0.5
RESISTANCE (NORMALIZED) 0.5
r(t), TRANSIENT THERMAL

0.3 0.2
0.2 P(pk)
0.1 qJC(t) = r(t) qJC
0.05 qJC = 4.16°C/W MAX
0.1
D CURVES APPLY FOR POWER
0.07
0.01 PULSE TRAIN SHOWN t1
0.05 READ TIME AT t1 t2
0.03 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

7.0 a transistor: average junction temperature and second
100 ms
IC, COLLECTOR CURRENT (AMP)

5.0
5.0 ms 1.0 ms breakdown. Safe operating area curves indicate IC − VCE
3.0 operation i.e., the transistor must not be subjected to greater
2.0 TJ = 150°C dc dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
1.0 is variable depending on conditions. Second breakdown
0.7 SECOND BREAKDOWN pulse limits are valid for duty cycles to 10% provided
0.5 LIMITED
TJ(pk) ≤ 150_C. At high case temperatures, thermal
BONDING WIRE LIMITED
0.3 THERMALLY LIMITED @ TC = 25°C limitations will reduce the power that can be handled to
0.2 PULSE CURVES APPLY BELOW values less than the limitations imposed by second
RATED VCEO breakdown.
0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5.0 5.0
3.0 IC/IB = 20 3.0
IC/IB = 20
2.0 2.0
t s′, STORAGE TIME (s)
μ

t f , FALL TIME (s)

1.0 1.0
μ

0.7 IC/IB = 10 IC/IB = 20 0.7

0.5 0.5
0.3 0.3 IC/IB = 10
0.2 TJ = 25°C 0.2 TJ = 25°C
TJ = 150°C TJ = 150°C
0.1 IB1 = IB2 0.1 VCC = 30 V
0.07 ts′ = ts - 1/8 tf 0.07 IB1 = IB2
0.05 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 6. Storage Time Figure 7. Fall Time

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 2N4921G, 2N4922G, 2N4923G

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000 1.0
700 VCE = 1.0 V
500 IC = 0.1 A 0.25 A 0.5 A 1.0 A
0.8
hFE, DC CURRENT GAIN

300
200 TJ = 150°C
0.6 TJ = 25°C

100
25°C
70 0.4
50 -55°C
30 0.2
20

10 0
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Current Gain Figure 9. Collector Saturation Region
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

108 1.5
IC = 10 x ICES VCE = 30 V TJ = 25°C
107 1.2
IC = 2 x ICES VOLTAGE (VOLTS)

106 0.9
IC ≈ ICES
VBE(sat) @ IC/IB = 10
105 0.6
VBE @ VCE = 2.0 V
ICES VALUES
104 OBTAINED FROM 0.3
FIGURE 12
VCE(sat) @ IC/IB = 10
103 0
0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance Figure 11. “On” Voltage

104 +2.5
hFE@VCE + 1.0V
TEMPERATURE COEFFICIENTS (mV/ °C)

+2.0
103
TJ = 150°C *APPLIES FOR IC/IB ≤
2
IC, COLLECTOR CURRENT (A)

+1.5
μ

102 100°C +1.0 TJ = 100°C to 150°C

25°C +0.5
*qVC FOR VCE(sat)
101 0
-55°C to +100°C
IC = ICES -0.5
100 VCE = 30 V -1.0

10-1 -1.5
qVB FOR VBE
-2.0
REVERSE FORWARD
10-2 -2.5
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region Figure 13. Temperature Coefficients

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 2N4921G, 2N4922G, 2N4923G

PACKAGE DIMENSIONS

TO−225
CASE 77−09
ISSUE AD
E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.

PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
Q 3.80 4.20
L1
STYLE 1:
PIN 1. EMITTER
L 2., 4. COLLECTOR
3. BASE

4
2X b2

2X e
b c
1 2 3 2
FRONT VIEW SIDE VIEW 3 1
FRONT VIEW BACK VIEW

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