STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, Stu95n3llh6
STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, Stu95n3llh6
STP95N3LLH6, STU95N3LLH6
N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type VDSS RDS(on) max ID 3
1
STB95N3LLH6 30 V 0.0042 Ω 80 A 3
2
STD95N3LLH6 30 V 0.0042 Ω 80 A DPAK 1
TO-220
■ Low gate drive power losses
Application
Figure 1. Internal schematic diagram
■ Switching applications
D (TAB or 2)
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all G(1)
packages.
S(3)
AM01474v1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .............................. 6
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1 Electrical ratings
2 Electrical characteristics
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 30 V
Voltage
Table 5. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
Input capacitance
Ciss 2200 pF
Output capacitance VDS = 25 V, f=1 MHz,
Coss - 400 - pF
Reverse transfer VGS = 0
Crss 280 pF
capacitance
Qg Total gate charge VDD = 15 V, ID = 80 A 20 nC
Qgs Gate-source charge VGS = 4.5 V - 8.2 - nC
Qgd Gate-drain charge Figure 13 7.5 nC
Pre Vth gate-to-source
Qgs1 3.4 nC
charge VDD = 15 V, ID = 80 A
- -
Post Vth gate-to-source Figure 18
Qgs2 6.2 nC
charge
f = 1 MHz gate bias
Bias = 0 test signal
RG Gate input resistance - 1 - Ω
level = 20 mV
open drain
VDD = 15 V, ID = 40 A,
td(on) Turn-on delay time 19 ns
RG = 4.7 Ω, VGS = 5 V - -
tr Rise time 91 ns
Figure 12
VDD = 15 V, ID = 40 A,
td(off) Turn-off delay time 24.5 ns
RG = 4.7 Ω, VGS = 5 V - -
tf Fall time 23.4 ns
Figure 12
AM03376v1 280dpc
ID K
(A)
ai
s δ=0.5
re n)
his a DS(o
nt R
n i max
100 tio
e ra by 0.2
d
Op ite
Lim
100µs 0.1 0.05
10 10
-1
1ms 0.02
Zth=k Rthj-c
Tj=175°C 0.01 δ=tp/τ
1 Tc=25°C 10ms
Sinlge
pulse tp
-2 Single pulse τ
0.1 10 -5 -4 -3 -2 -1
0.1 1 10 VDS(V) 10 10 10 10 10 tp (s)
AM03379v1 AM03380v1
ID ID
(A) VGS=10V (A) VDS=2V
300 7V 300
6V
250 250
200 5V 200
150 150
100 4V 100
50 50
3V
0 0
0 2 4 VDS(V) 0 2 4 6 8 VGS(V)
AM03381v1 AM03382v1
BVDSS RDS(on)
(norm) (mΩ)
@250µA VGS=10V
7
1.05 6
1.00 4
0.95 2
0.90 0
-55 -30 -5 20 45 70 95 120 145 TJ(°C) 0 10 20 30 40 ID(A)
AM03378v1 AM03377v1
VGS C
(V) (pF)
VDD=15V
12
ID=80A
10
Ciss
8
1000
6
4 Coss
Crss
2
0 100
0 10 20 30 40 50 Qg(nC) 5 10 15 20 20 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM03383v1 AM03384v1
VGS(th) RDS(on)
(norm) (norm)
@250µA VGS=10V
1.2 1.8
ID=40A
1.0 1.6
0.8 1.4
0.6 1.2
0.4 1.0
0.2 0.8
0 0.6
-55 -30 -5 20 45 70 95 120 145 TJ(°C) -55 -30 -5 20 45 70 95 120 145 TJ(°C)
3 Test circuits
Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit
resistive load
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG
PW
47kΩ
PW 1kΩ
AM01468v1 AM01469v1
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test
switching and diode recovery times circuit
L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
90% 90%
IDM
10%
ID 10% VDS
0
Id
Vds
Vgs
Vgs(th)
mm.
DIM.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
(L1) 0.80 1.20
L2 0.80
V1 10 o
0068771_H
mm.
DIM.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1
L1 2.80
L2 0.80
L4 0.60 1
R 0.20
V2 0o 8o
0068772_G
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 0.03 0.23 0.001 0.009
b 0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 7.50 0.295
E 10 10.40 0.394 0.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.28 0.192 0.208
H 15 15.85 0.590 0.624
J1 2.49 2.69 0.099 0.106
L 2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8° 0° 8°
0079457_M
mm
Dim
Min Typ Max
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
0015988_Rev_S
DPAK FOOTPRINT
D 2 PAK FOOTPRINT
6 Revision history
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