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APM9435

The document provides technical specifications for a P-Channel MOSFET device. It details the device's electrical characteristics, maximum ratings, package information, and includes disclaimer. The device is intended for low voltage applications such as power management in phones and computers.

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ivangunawan71
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211 views5 pages

APM9435

The document provides technical specifications for a P-Channel MOSFET device. It details the device's electrical characteristics, maximum ratings, package information, and includes disclaimer. The device is intended for low voltage applications such as power management in phones and computers.

Uploaded by

ivangunawan71
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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APM9435

ZhenYangGroup CO,LTD 30V P-Channel MOSFET

General Description Product Summary


The Z9435 is the P-Channel logic enhancement mode power VDS -30V
field effect transistors, using high cell density, DMOS trench
ID (at VGS=20 V) -5.3A
technology. This high density process is especially tailored to
RDS(ON) (at VGS=-10V) < 55m Ω
minimize on-state resistance. These devices are particularly
RDS(ON) (at VGS =-4.5V) < 90mΩ
suited for low voltage application such as cellular phone,
notebook computer power management and other battery
powered circuits,and low in-line power loss that are needed in a
very small outline surface mount package.

z Pin Configuration

Absolute Maximum Ratings TA=25°C unless otherwise noted


Symbol Units
Parameter Limits Units

Drain-Source Voltage VDS -30 V

Gate-Source Voltage VGS 20 V

Continuous Drain Current ID -5.3


A
Pulsed Drain Current1) IDM -20

TA=25 2.5
Maximum Power Dissipation PD W
TA=70

Operating Junction Temperature TJ -55 to 150 ℃

Junction-to-Case Thermal Resistance R JC 30 /W

Junction-to-Ambient Thermal Resistance (PCB


R JA 50 /W
mounted) 2)

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ZhenYangGroup CO,LTD APM9435

z Electrical Characteristics @TA=25℃ unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

STATIC

BVDSS
B Drain-Source Breakdown Voltage VGS=0V,ID=-250 A -30 V
VGS = -10V, ID = -5.3A 55 60
RDS(ON) Drain-Source On-Resistance mΩ
VGS =-4.5V, ID = -4.2A 90 100
VGS(th) Gate-Threshold Voltage VGS =VGS, ID=-250 A -1.0 -2.2 -3.0 V
IGSS Gate-Body Leakage VGS =+20V, VDS = 0V +100 nA
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 A
gFS Forward Transconductance VDS = -15V, ID =-5.3A 4 7 S
DYNAMIC

Qg Total Gate Charge 9.52


Qgs Gate-Source Charge VDS=-15V, ID=-5.3A, VGS=-10V 3.43 nC

Qgd Gate-Drain Charge 1.71


tD(on) Turn-On Delay Time 34.5
tr Turn-On Rise Time VDD= -15V, RL = 15 ID = -1A, 18.6
ns
tD(off) Turn-Off Delay Time VGEN=-10V RG = 6 37.1
tf Turn-Off Fall Time 3.1

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ZhenYangGroup CO,LTD
APM9435

z Typical Performance Characteristics

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ZhenYangGroup CO,LTD
APM9435

z Package Information

Physical Dimensions inches(millimeters) unless otherwise noted

SOP-8

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ZhenYangGroup CO,LTD
APM9435

DISCLAIMER

Z HENYANG GROUP CO,LTD RESERVES THE RIGHT TO MAKE C HANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. Z HENYANG DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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