1) Introduction 2018
1) Introduction 2018
Int’l Edition
Power Electronics
3
Controller
Electronic
switch Inductor and
capacitor
Electronic Switches
14
Two states:
on - ideally being a short circuit with voltage is
zero
off - ideally being an open circuit with current is
zero.
Real switches absorb some power.
Diode off
Thyristor
Transistor
on
Diode
15
Uncontrollable
on and off conditions are determined by voltages and
currents in the circuit
forward-biased (on) when the current id is positive
and reverse biased (off) when vd is negative.
Diode
16
Voltage-controlled device.
A sufficiently large gate-to-source voltage will turn the
device on.
Have on-state resistances as low as a few milliohms.
Fast switching transition and used in converters
operating into the megahertz range.
BJT
24
Current-controlled device.
On state is achieved by providing
sufficient base current to drive the
BJT into saturation.
Zero base current results in an off
transistor.
To carry high collector current, high
base current is needed to drive BJT
into saturation.
Insulated Gate Bipolar Transistor (IGBT)
25
Integrated connection of a
MOSFET and a BJT.
Voltage-controller device.
Drive circuit for the IGBT is
like that of the MOSFET,
while the on-state
characteristics are like those
of the BJT.
IGBTs have replaced BJTs in
many applications.
Emerging Transistors
26
Depends on :
voltage level
current level
switching
characteristics
(operating point,
turn-on & turnoff
characteristics)
Computer Simulation
28