STM32F303xD STM32F303xE

ARM® Cortex®-M4 32b MCU+FPU, up to 512KB Flash, 80KB SRAM,

FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
Datasheet - production data

Features
• Core: ARM® Cortex®-M4 32-bit CPU with
72 MHz FPU, single-cycle multiplication and
HW division, 90 DMIPS (from CCM), DSP LQFP64
LQFP100
(14 × 14 mm)
LQFP144
(10 × 10 mm) (20 x 20 mm)
instruction and MPU (memory protection unit)
• Operating conditions:
– VDD, VDDA voltage range: 2.0 V to 3.6 V
• Memories
WLCSP100
– Up to 512 Kbytes of Flash memory UFBGA100
(7 x 7 mm) (4.775 x 5.041 mm)
– 64 Kbytes of SRAM, with HW parity check
implemented on the first 32 Kbytes. • Two 12-bit DAC channels with analog supply
from 2.4 to 3.6 V
– Routine booster: 16 Kbytes of SRAM on
instruction and data bus, with HW parity • Seven ultra-fast rail-to-rail analog comparators
check (CCM) with analog supply from 2.0 to 3.6 V
– Flexible memory controller (FSMC) for • Four operational amplifiers that can be used in
static memories, with four Chip Select PGA mode, all terminals accessible with
• CRC calculation unit analog supply from 2.4 to 3.6 V

• Reset and supply management • Up to 24 capacitive sensing channels supporting

touchkey, linear and rotary touch sensors
– Power-on/Power-down reset (POR/PDR)
– Programmable voltage detector (PVD) • Up to 14 timers:
– Low-power modes: Sleep, Stop and – One 32-bit timer and two 16-bit timers with
Standby up to four IC/OC/PWM or pulse counter
and quadrature (incremental) encoder input
– VBAT supply for RTC and backup registers
– Three 16-bit 6-channel advanced-control
• Clock management timers, with up to six PWM channels,
– 4 to 32 MHz crystal oscillator deadtime generation and emergency stop
– 32 kHz oscillator for RTC with calibration – One 16-bit timer with two IC/OCs, one
– Internal 8 MHz RC with x 16 PLL option OCN/PWM, deadtime generation and
– Internal 40 kHz oscillator emergency stop
• Up to 115 fast I/Os – Two 16-bit timers with IC/OC/OCN/PWM,
deadtime generation and emergency stop
– All mappable on external interrupt vectors
– Two watchdog timers (independent,
– Several 5 V-tolerant
window)
• Interconnect matrix – One SysTick timer: 24-bit downcounter
• 12-channel DMA controller – Two 16-bit basic timers to drive the DAC
• Four ADCs 0.20 µs (up to 40 channels) with • Calendar RTC with Alarm, periodic wakeup
selectable resolution of 12/10/8/6 bits, 0 to from Stop/Standby
3.6 V conversion range, separate analog
• Communication interfaces
supply from 2.0 to 3.6 V
– CAN interface (2.0B Active)

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This is information on a product in full production. www.st.com
 STM32F303xD STM32F303xE

– Three I2C Fast mode plus (1 Mbit/s) with – USB 2.0 full-speed interface with LPM
20 mA current sink, SMBus/PMBus, support
wakeup from STOP – Infrared transmitter
– Up to five USART/UARTs (ISO 7816 • SWD, Cortex®-M4 with FPU ETM, JTAG
interface, LIN, IrDA, modem control)
• 96-bit unique ID
– Up to four SPIs, 4 to 16 programmable bit
frames, two with multiplexed half/full duplex
I2S interface
Table 1. Device summary
Reference Part number
STM32F303xD STM32F303RD, STM32F303VD, STM32F303ZD.
STM32F303xE STM32F303RE, STM32F303VE, STM32F303ZE.

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Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 ARM® Cortex®-M4 core with FPU with embedded Flash and SRAM . . . 16
3.2 Memory protection unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.4 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6 Cyclic redundancy check (CRC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7 Power management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8 Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.10 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.11 Direct memory access (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.12 Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 22
3.13 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.13.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 23
3.14 Fast analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.14.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.14.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.14.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.14.4 OPAMP reference voltage (VREFOPAMP) . . . . . . . . . . . . . . . . . . . . . . 24
3.15 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.16 Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.17 Ultra-fast comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.18 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

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3.18.1 Advanced timers (TIM1, TIM8, TIM20) . . . . . . . . . . . . . . . . . . . . . . . . . 26

3.18.2 General-purpose timers (TIM2, TIM3, TIM4, TIM15, TIM16, TIM17) . . 26
3.18.3 Basic timers (TIM6, TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.18.4 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.18.5 Window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.18.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.19 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 28
3.20 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.21 Universal synchronous/asynchronous receiver transmitter (USART) . . . 29
3.22 Universal asynchronous receiver transmitter (UART) . . . . . . . . . . . . . . . 30
3.23 Serial peripheral interface (SPI)/Inter-integrated sound interfaces (I2S) . 30
3.24 Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.25 Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.26 Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.27 Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.28 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.28.1 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.28.2 Embedded Trace Macrocell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

4 Pinout and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
6.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 73

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6.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 73

6.3.4 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.3.6 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
6.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.3.10 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
6.3.11 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
6.3.12 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
6.3.13 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.14 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
6.3.15 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
6.3.16 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
6.3.17 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
6.3.18 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
6.3.19 ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
6.3.20 DAC electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
6.3.21 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
6.3.22 Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 148
6.3.23 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
6.3.24 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152

7.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
7.2 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
7.3 UFBGA100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
7.4 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
7.5 WLCSP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
7.6 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
7.7 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
7.7.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
7.7.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 168

8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172

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List of tables STM32F303xD STM32F303xE

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table 2. STM32F303xD/E family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . 13
Table 3. External analog supply values for analog peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 4. STM32F303xD/E peripheral interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 5. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 6. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 7. STM32F303xD/E I2C implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 8. USART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 9. STM32F303xD/E SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 10. Capacitive sensing GPIOs available on STM32F303xD/E devices . . . . . . . . . . . . . . . . . . 32
Table 11. Number of capacitive sensing channels available on
STM32F303xD/E devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 12. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 13. STM32F303xD/E pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 14. STM32F303xD/E alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 15. Memory map, peripheral register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 16. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 17. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 18. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 19. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 20. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 21. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 22. Programmable voltage detector characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 23. Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 24. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 25. Typical and maximum current consumption from VDD supply at VDD = 3.6V . . . . . . . . . . . 75
Table 26. Typical and maximum current consumption from the VDDA supply . . . . . . . . . . . . . . . . . . 76
Table 27. Typical and maximum VDD consumption in Stop and Standby modes. . . . . . . . . . . . . . . . 77
Table 28. Typical and maximum VDDA consumption in Stop and Standby modes. . . . . . . . . . . . . . . 78
Table 29. Typical and maximum current consumption from VBAT supply. . . . . . . . . . . . . . . . . . . . . . 78
Table 30. Typical current consumption in Run mode, code with data processing running
from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 31. Typical current consumption in Sleep mode, code running from Flash or RAM . . . . . . . . . 81
Table 32. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 33. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 34. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 35. Wakeup time using USART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 36. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 37. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 38. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 40. HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 41. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 42. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 43. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 44. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 45. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . 96
Table 46. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . 96

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Table 47. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . 97

Table 48. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings. . . . . . . . . . . . 98
Table 49. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . . 98
Table 50. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 51. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 52. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 101
Table 53. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 54. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 55. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 56. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 57. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 58. Switching characteristics for PC Card/CF read and write cycles in I/O space . . . . . . . . . 111
Table 59. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 60. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 61. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 62. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 63. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 64. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 65. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 66. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 67. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 68. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 69. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 70. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 71. IWDG min/max timeout period at 40 kHz (LSI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 72. WWDG min-max timeout value @72 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 73. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 74. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 75. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 76. USB startup time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 77. USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 78. USB: full-speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 79. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 80. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 81. ADC accuracy - limited test conditions, 100-/144-pin packages . . . . . . . . . . . . . . . . . . . 137
Table 82. ADC accuracy, 100-pin/144-pin packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 83. ADC accuracy - limited test conditions, 64-pin packages . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 84. ADC accuracy, 64-pin packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 85. ADC accuracy at 1MSPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 86. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 87. Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 88. Operational amplifier characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 89. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Table 90. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Table 91. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 92. LQFP144 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 93. UFBGA100 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 94. UFBGA100 recommended PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . 157
Table 95. LQPF100 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 96. WLCSP100 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Table 97. WLCSP100 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . 164

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List of tables STM32F303xD STM32F303xE

Table 98. LQFP64 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165

Table 99. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 100. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Table 101. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172

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STM32F303xD STM32F303xE List of figures

List of figures

Figure 1. STM32F303xD/E block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 2. STM32F303xD/E clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 3. Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 4. STM32F303xD/E LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 5. STM32F303xD/E LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 6. STM32F303xD/E LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 7. STM32F303xD/E WLCSP100 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 8. STM32F303xD/E UFBGA100 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 9. STM32F303xD/E memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Figure 10. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Figure 11. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Figure 12. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Figure 13. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 14. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] 00’) . . . . . . . . . . . . . 79
Figure 15. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 16. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Figure 17. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 18. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 19. HSI oscillator accuracy characterization results for soldered parts . . . . . . . . . . . . . . . . . . 93
Figure 20. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . 95
Figure 21. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . 97
Figure 22. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 23. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Figure 24. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Figure 25. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 26. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 27. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Figure 28. PC Card/CompactFlash controller waveforms for common memory
read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Figure 29. PC Card/CompactFlash controller waveforms for common memory
write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Figure 30. PC Card/CompactFlash controller waveforms for attribute memory
read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 31. PC Card/CompactFlash controller waveforms for attribute memory
write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Figure 32. PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 112
Figure 33. PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 112
Figure 34. NAND controller read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 35. NAND controller write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 36. TC and TTa I/O input characteristics - CMOS port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 37. TC and TTa I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 38. Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port. . . . . . . . . . . . . . . . 120
Figure 39. Five volt tolerant (FT and FTf) I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . 120
Figure 40. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 41. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 42. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 43. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 44. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

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List of figures STM32F303xD STM32F303xE

Figure 45. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

Figure 46. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Figure 47. USB timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Figure 48. ADC typical current consumption on VDDA pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 49. ADC typical current consumption on VREF+ pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 50. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 51. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Figure 52. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 53. OPAMP voltage noise versus frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 54. LQFP144 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 55. Recommended footprint for the LQFP144 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Figure 56. LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 57. UFBGA100 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 58. Recommended footprint for the UFBGA100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Figure 59. UFBGA100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 60. LQFP100 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Figure 61. Recommended footprint for the LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Figure 62. LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 63. WLCSP100 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Figure 64. Recommended footprint for the WLCSP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 65. WLCSP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Figure 66. LQFP64 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 67. Recommended footprint for the LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 68. LQFP64 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Figure 69. LQFP100 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170

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STM32F303xD STM32F303xE Introduction

1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of
the STM32F303xD/E microcontrollers.
This STM32F303xD/E datasheet should be read in conjunction with the reference manual of
STM32F303xB/C/D/E, STM32F358xC and STM32F328x4/6/8 devices (RM0316) available
on STMicroelectronics website at www.st.com.
For information on the ARM® Cortex®-M4 core with FPU, refer to the following documents:
• Cortex® -M4 with FPU Technical Reference Manual, available from the www.arm.com
website
• STM32F3 and STM32F4 Series Cortex® -M4 programming manual (PM0214)
available on STMicroelectronics website at www.st.com.

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Description STM32F303xD STM32F303xE

2 Description

The STM32F303xD/E family is based on the high-performance ARM® Cortex®-M4 32-bit

RISC core with FPU operating at a frequency of 72 MHz, and embedding a floating point
unit (FPU), a memory protection unit (MPU) and an embedded trace macrocell (ETM). The
family incorporates high-speed embedded memories (512-Kbyte Flash memory, 80-Kbyte
SRAM), a flexible memory controller (FSMC) for static memories (SRAM, PSRAM, NOR
and NAND), and an extensive range of enhanced I/Os and peripherals connected to an
AHB and two APB buses.
The devices offer four fast 12-bit ADCs (5 Msps), seven comparators, four operational
amplifiers, two DAC channels, a low-power RTC, up to five general-purpose 16-bit timers,
one general-purpose 32-bit timer, and up,to three timers dedicated to motor control. They
also feature standard and advanced communication interfaces: up to three I2Cs, up to four
SPIs (two SPIs are with multiplexed full-duplex I2Ss), three USARTs, up to two UARTs, CAN
and USB. To achieve audio class accuracy, the I2S peripherals can be clocked via an
external PLL.
The STM32F303xD/E family operates in the -40 to +85°C and -40 to +105°C temperature
ranges from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving mode allows
the design of low-power applications.
The STM32F303xD/E family offers devices in different packages ranging from 64 to
144 pins.
Depending on the device chosen, different sets of peripherals are included.

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STM32F303xD STM32F303xE Description

Table 2. STM32F303xD/E family device features and peripheral counts

Peripheral STM32F303Rx STM32F303Vx STM32F303Zx
Flash (Kbytes) 384 512 384 512 384 512
SRAM (Kbytes) on data bus 64
CCM (Core Coupled Memory) RAM
16
(Kbytes)
FMC (flexible memory controller) NO YES
Advanced control 2 (16-bit)(1) 3 (16-bit)
5 (16-bit)
General purpose
1 (32-bit)
PWM channels (all) (2) 31 40 40
Timers
Basic 2 (16-bit)
PWM channels
(except 22 28 28
complementary)
SPI (I2S)(3) 4(2)
I2C 3
Communication USART 3
interfaces UART 2
CAN 1
USB 1
37 in WLCSP100,44 in
Normal I/Os
26 LQFP100 and 45
(TC, TTa)
UFBGA100
GPIOs
42 in LQFP100
5-volt tolerant
25 40 in WLCSP100 and 70
I/Os (FT, FTf)
UFBGA100
DMA channels 12
Capacitive sensing channels 18 24
4
39 channels in
LQFP100-pin and
4 4
12-bit ADCs UFBGA100
22 channels 40 channels
33 channels in
WLCSP100

12-bit DAC channels

Analog comparator
Operational amplifiers
CPU frequency 72 MHz
Operating voltage 2.0 to 3.6 V

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67
Description STM32F303xD STM32F303xE

Table 2. STM32F303xD/E family device features and peripheral counts (continued)

Peripheral STM32F303Rx STM32F303Vx STM32F303Zx
Ambient operating temperature: - 40 to 85 °C / - 40 to 105 °C
Operating temperature
Junction temperature: - 40 to 125 °C
LQFP100
Packages LQFP64 WLCSP100 LQFP144
UFBGA100
1. TIM1 and TIM8 are the two available advanced timers.
2. This total number considers also the PWMs generated on the complementary output channels.
3. The SPI interfaces works in an exclusive way in either the SPI mode or the I2S audio mode.

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STM32F303xD STM32F303xE Description

Figure 1. STM32F303xD/E block diagram

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3 Functional overview

3.1 ARM® Cortex®-M4 core with FPU with embedded Flash and
SRAM
The ARM® Cortex®-M4 processor with FPU is the latest generation of ARM processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The ARM® Cortex®-M4 32-bit RISC processor with FPU features exceptional code-
efficiency, delivering the high-performance expected from an ARM core in the memory size
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allows efficient signal processing
and complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded ARM core, the STM32F303xD/E family is compatible with all ARM tools
and software.
Figure 1 shows the general block diagram of the STM32F303xD/E family devices.

3.2 Memory protection unit (MPU)

The memory protection unit (MPU) is used to separate the processing of tasks from the data
protection. The MPU manage up to 8 protection areas that are further divided up into 8
subareas. The protection area sizes are between 32 bytes and the whole 4 gigabytes of
addressable memory.
The memory protection unit is especially helpful for applications where some critical or
certified code has to be protected against the misbehavior of other tasks. It is usually
managed by an RTOS (real-time operating system). If a program accesses a memory
location that is prohibited by the MPU, the RTOS detects it and takes action. In an RTOS
environment, the kernel dynamically updates the MPU area setting, based on the process to
be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.3 Embedded Flash memory

All STM32F303xD/E devices feature 384/512 Kbyte of embedded Flash memory available
for storing programs and data. The Flash memory access time is adjusted to the CPU clock
frequency (0 wait state from 0 to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states
above).

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3.4 Embedded SRAM

STM32F303xD/E devices feature 80 Kbytes of embedded SRAM with hardware parity
check. The memory can be accessed in read/write at CPU clock speed with 0 wait states,
allowing the CPU to achieve 90 Dhrystone MIPS at 72 MHz (when running code from the
CCM (Core Coupled Memory) RAM).
• 16 Kbytes of CCM SRAM mapped on both instruction and data bus, used to execute
critical routines or to access data (parity check on all of CCM SRAM).
• 64 Kbytes of SRAM mapped on the data bus (parity check on first 32 Kbytes of SRAM).

3.5 Boot modes

At startup, Boot0 pin and Boot1 option bit are used to select one of three boot options:
• Boot from user Flash
• Boot from system memory
• Boot from embedded SRAM
The boot loader is located in the system memory. It is used to reprogram the Flash memory
by using USART1 (PA9/PA10), USART2 (PA2/PA3) or USB (PA11/PA12) through DFU
(device firmware upgrade).

3.6 Cyclic redundancy check (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at
linktime and stored at a given memory location.

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3.7 Power management

3.7.1 Power supply schemes

• VSS, VDD = 2.0 to 3.6 V: external power supply for I/Os and the internal regulator. It is
provided externally through VDD pins.
• VSSA, VDDA = 2.0 to 3.6 V: external analog power supply for ADC, DAC, comparators,
operational amplifier, reset blocks, RCs and PLL. The minimum voltage to be applied to
VDDA differs from one analog peripheral to another. Table 3 provides the summary of
the VDDA ranges for analog peripherals. The VDDA voltage level must always be greater
than or equal to the VDD voltage level and must be provided first.

Table 3. External analog supply values for analog peripherals

Analog peripheral Minimum VDDA supply Maximum VDDA supply

ADC/COMP 2.0 V 3.6 V

DAC/OPAMP 2.4 V 3.6 V

• VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.

3.7.2 Power supply supervisor

The device has an integrated power-on reset (POR) and power-down reset (PDR) circuits.
They are always active, and ensure proper operation above a threshold of 2 V. The device
remains in reset mode when the monitored supply voltage is below a specified threshold,
VPOR/PDR, without the need for an external reset circuit.
• The POR monitors only the VDD supply voltage. During the startup phase it is required
that VDDA should arrive first and be greater than or equal to VDD.
• The PDR monitors both the VDD and VDDA supply voltages, however the VDDA power
supply supervisor can be disabled (by programming a dedicated Option bit) to reduce
the power consumption if the application design ensures that VDDA is higher than or
equal to VDD.
The device features an embedded programmable voltage detector (PVD) that monitors the
VDD power supply and compares it to the VPVD threshold. An interrupt can be generated
when VDD drops below the VPVD threshold and/or when VDD is higher than the VPVD
threshold. The interrupt service routine can then generate a warning message and/or put
the MCU into a safe state. The PVD is enabled by software.

3.7.3 Voltage regulator

The regulator has three operation modes: main (MR), low power (LPR), and power-down.
• The MR mode is used in the nominal regulation mode (Run)
• The LPR mode is used in Stop mode.
• The power-down mode is used in Standby mode: the regulator output is in high
impedance, and the kernel circuitry is powered down thus inducing zero consumption.
The voltage regulator is always enabled after reset. It is disabled in Standby mode.

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3.7.4 Low-power modes

The STM32F303xD/E supports three low-power modes to achieve the best compromise
between low power consumption, short startup time and available wakeup sources:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and wake
up the CPU when an interrupt/event occurs.
• Stop mode
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the USB wakeup, the RTC
alarm, COMPx, I2Cx or U(S)ARTx.
• Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pin or an RTC alarm occurs.
Note: The RTC, the IWDG and the corresponding clock sources are not stopped by entering Stop
or Standby mode.

3.8 Interconnect matrix

Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.

Table 4. STM32F303xD/E peripheral interconnect matrix

Interconnect
Interconnect source Interconnect action
destination

TIMx Timers synchronization or chaining

ADCx
Conversion triggers
TIMx DAC1
DMA Memory to memory transfer trigger
Compx Comparator output blanking
COMPx TIMx Timer input: OCREF_CLR input, input capture
ADCx TIMx Timer triggered by analog watchdog

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Table 4. STM32F303xD/E peripheral interconnect matrix (continued)

Interconnect
Interconnect source Interconnect action
destination

GPIO
RTCCLK Clock source used as input channel for HSI and
TIM16
HSE/32 LSI calibration
MC0
CSS
CPU (hard fault) TIM1, TIM8, TIM20
Timer break
COMPx TIM15, 16, 17
GPIO
TIMx External trigger, timer break
GPIO ADCx
Conversion external trigger
DAC1
DAC1 COMPx Comparator inverting input

Note: For more details about the interconnect actions, refer to the corresponding sections in the
STM32F303xD/Ereference manual (RM0316).

3.9 Clocks and startup

System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-32 MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example with
failure of an indirectly used external oscillator).
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the high
speed APB domains is 72 MHz, while the maximum allowed frequency of the low speed
APB domain is 36 MHz.

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Figure 2. STM32F303xD/E clock tree

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3.10 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. All GPIOs are high current
capable except for analog inputs.
The I/Os alternate function configuration can be locked if needed following a specific
sequence to avoid spurious writing to the I/Os registers.
Fast I/O handling allows I/O toggling up to 36 MHz.

3.11 Direct memory access (DMA)

The flexible general-purpose DMA is able to manage memory-to-memory, peripheral-to-
memory and memory-to-peripheral transfers. The DMA controller supports circular buffer
management, avoiding the generation of interrupts when the controller reaches the end of
the buffer.
Each of the 12 DMA channels is connected to dedicated hardware DMA requests, with
software trigger support for each channel. Configuration is done by software and transfer
sizes between source and destination are independent.
The DMA is used with the main peripherals: SPI, I2C, USART, general-purpose timers, DAC
and ADC.

3.12 Flexible static memory controller (FSMC)

The flexible static memory controller (FSMC) includes two memory controllers:
• The NOR/PSRAM memory controller,
• The NAND/PC Card memory controller.
This memory controller is also named Flexible memory controller (FMC).
The main features of the FMC controller are the following:
• Interface with static-memory mapped devices including:
– Static random access memory (SRAM),
– NOR Flash memory/OneNAND Flash memory,
– PSRAM (four memory banks),
– NAND Flash memory with ECC hardware to check up to 8 Kbyte of data,
– 16-bit PC Card compatible devices.
• 8-,16-bit data bus width,
• Independent Chip Select control for each memory bank,
• Independent configuration for each memory bank,
• Write FIFO,
• LCD parallel interface.
The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost

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effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.

3.13 Interrupts and events

3.13.1 Nested vectored interrupt controller (NVIC)

The STM32F303xD/E devices embed a nested vectored interrupt controller (NVIC) able to
handle up to 73 maskable interrupt channels and 16 priority levels.
The NVIC benefits are the following:
• Closely coupled NVIC gives low latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Closely coupled NVIC core interface
• Allows early processing of interrupts
• Processing of late arriving higher priority interrupts
• Support for tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.

3.14 Fast analog-to-digital converter (ADC)

Four fast analog-to-digital converters 5 MSPS, with selectable resolution between 12 and 6
bit, are embedded in the STM32F303xD/E family devices. The ADCs have up to 40 external
channels. Some of the external channels are shared between ADC1&2 and between
ADC3&4. The ADCs can perform conversions in single-shot or scan modes. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
The ADCs have also internal channels: Temperature sensor connected to ADC1 channel
16, VBAT/2 connected to ADC1 channel 17, Voltage reference VREFINT connected to the 4
ADCs channel 18, VREFOPAMP1 connected to ADC1 channel 15, VREFOPAMP2
connected to ADC2 channel 17, VREFOPAMP3 connected to ADC3 channel 17 and
VREFOPAMP4 connected to ADC4 channel 17.
Additional logic functions embedded in the ADC interface allow:
• Simultaneous sample and hold
• Interleaved sample and hold
• Single-shunt phase current reading techniques.
The ADC can be served by the DMA controller.
Three analog watchdogs are available per ADC.
The analog watchdog feature allows very precise monitoring of the converted voltage of
one, some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.

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The events generated by the general-purpose timers and the advanced-control timers
(TIM1, TIM8 and TIM20) can be internally connected to the ADC start trigger and injection
trigger, respectively, to allow the application to synchronize A/D conversion and timers.

3.14.1 Temperature sensor

The temperature sensor (TS) generates a voltage VSENSE that varies linearly with
temperature.
The temperature sensor is internally connected to the ADC1_IN16 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.

3.14.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC and Comparators. VREFINT is internally connected to the ADCx_IN18, x=1...4 input
channel. The precise voltage of VREFINT is individually measured for each part by ST during
production test and stored in the system memory area. It is accessible in read-only mode.

3.14.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT battery voltage
using the internal ADC channel ADC1_IN17. As the VBAT voltage may be higher than VDDA,
and thus outside the ADC input range, the VBAT pin is internally connected to a bridge
divider by 2. As a consequence, the converted digital value is half the VBAT voltage.

3.14.4 OPAMP reference voltage (VREFOPAMP)

Every OPAMP reference voltage can be measured using a corresponding ADC internal
channel: VREFOPAMP1 connected to ADC1 channel 15, VREFOPAMP2 connected to
ADC2 channel 17, VREFOPAMP3 connected to ADC3 channel 17 and VREFOPAMP4
connected to ADC4 channel 17.

3.15 Digital-to-analog converter (DAC)

Two 12-bit buffered DAC channels can be used to convert digital signals into analog voltage
signal outputs. The chosen design structure is composed of integrated resistor strings and
an amplifier in inverting configuration.
This digital interface supports the following features:
• Two DAC output channels
• 8-bit or 10-bit monotonic output

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• Left or right data alignment in 12-bit mode

• Synchronized update capability
• Noise-wave generation
• Triangular-wave generation
• Dual DAC channel independent or simultaneous conversions
• DMA capability (for each channel)
• External triggers for conversion
• Input voltage reference VREF+

3.16 Operational amplifier (OPAMP)

The STM32F303xD/E embed four operational amplifiers with external or internal follower
routing and PGA capability (or even amplifier and filter capability with external components).
When an operational amplifier is selected, an external ADC channel is used to enable
output measurement.
The operational amplifier features:
• 8.2 MHz bandwidth
• 0.5 mA output capability
• Rail-to-rail input/output
• In PGA mode, the gain is programmed to be 2, 4, 8 or 16.

3.17 Ultra-fast comparators (COMP)

The STM32F303xD/E devices embed seven ultra-fast rail-to-rail comparators with
programmable reference voltage (internal or external) and selectable output polarity.
The reference voltage can be one of the following:
• External I/O
• DAC output pin
• Internal reference voltage or submultiple (1/4, 1/2, 3/4). Refer to Table 23: Embedded
internal reference voltage for the value and precision of the internal reference voltage.
All comparators can wake up from STOP mode, generate interrupts and breaks for the
timers.

3.18 Timers and watchdogs

The STM32F303xD/E include three advanced control timers, up to six general-purpose
timers, two basic timers, two watchdog timers and one SysTick timer. The table below
compares the features of the advanced control, general purpose and basic timers.

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Table 5. Timer feature comparison

DMA Capture/
Counter Counter Prescaler Complementary
Timer type Timer request compare
resolution type factor outputs
generation channels

Any integer
TIM1, TIM8, Up, Down,
Advanced 16-bit between 1 Yes 4 Yes
TIM20 Up/Down
and 65536
Any integer
General- Up, Down,
TIM2 32-bit between 1 Yes 4 No
purpose Up/Down
and 65536
Any integer
General- Up, Down,
TIM3, TIM4 16-bit between 1 Yes 4 No
purpose Up/Down
and 65536
Any integer
General-
TIM15 16-bit Up between 1 Yes 2 1
purpose
and 65536
Any integer
General-
TIM16, TIM17 16-bit Up between 1 Yes 1 1
purpose
and 65536
Any integer
TIM6,
Basic 16-bit Up between 1 Yes 0 No
TIM7
and 65536

Note: TIM1/8/20/2/3/4/15/16/17 can have PLL as clock source, and therefore can be clocked at
144 MHz.

3.18.1 Advanced timers (TIM1, TIM8, TIM20)

The advanced-control timers (TIM1, TIM8, TIM20) can each be seen as a three-phase
PWM multiplexed on six channels. They have complementary PWM outputs with
programmable inserted dead-times. They can also be seen as complete general-purpose
timers. The four independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge or center-aligned modes) with full modulation capability (0-
100%)
• One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIM timers (described in
Section 3.18.2) using the same architecture, so the advanced-control timers can work
together with the TIM timers via the Timer Link feature for synchronization or event chaining.

3.18.2 General-purpose timers (TIM2, TIM3, TIM4, TIM15, TIM16, TIM17)

There are up to six synchronizable general-purpose timers embedded in the
STM32F303xD/E (see Table 5 for differences). Each general-purpose timer can be used to
generate PWM outputs, or act as a simple time base.

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• TIM2, 3, and TIM4

These are full-featured general-purpose timers:
– TIM2 has a 32-bit auto-reload up/downcounter and 32-bit prescaler
– TIM3 and 4 have 16-bit auto-reload up/downcounters and 16-bit prescalers.
These timers all feature 4 independent channels for input capture/output compare,
PWM or one-pulse mode output. They can work together, or with the other general-
purpose timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
• TIM15, 16 and 17
These three timers general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
– TIM15 has 2 channels and 1 complementary channel
– TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.

3.18.3 Basic timers (TIM6, TIM7)

These timers are mainly used for DAC trigger generation. They can also be used as a
generic 16-bit time base.

3.18.4 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free running timer for application timeout
management. It is hardware or software configurable through the option bytes. The counter
can be frozen in debug mode.

3.18.5 Window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free running. It is
used as a watchdog to reset the device when a problem occurs. It is clocked from the main
clock. It has an early warning interrupt capability and the counter can be frozen in debug
mode.

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3.18.6 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
• A 24-bit down counter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0.
• Programmable clock source

3.19 Real-time clock (RTC) and backup registers

The RTC and the 16 backup registers are supplied through a switch that takes power from
either the VDD supply when present or the VBAT pin. The backup registers are sixteen 32-bit
registers used to store 64 bytes of user application data when VDD power is not present.
They are not reset by a system or power reset, or when the device wakes up from Standby
mode.
The RTC is an independent BCD timer/counter. It supports the following features:
• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
• Automatic correction for 28, 29 (leap year), 30 and 31 days of the month.
• Two programmable alarms with wake up from Stop and Standby mode capability.
• On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
• Digital calibration circuit with 1 ppm resolution, to compensate for quartz crystal
inaccuracy.
• Three anti-tamper detection pins with programmable filter. The MCU can be woken up
from Stop and Standby modes on tamper event detection.
• Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event. The MCU can be
woken up from Stop and Standby modes on timestamp event detection.
• 17-bit Auto-reload counter for periodic interrupt with wakeup from STOP/STANDBY
capability.
The RTC clock sources can be:
• A 32.768 kHz external crystal
• A resonator or oscillator
• The internal low-power RC oscillator (typical frequency of 40 kHz)
• The high-speed external clock divided by 32.

3.20 Inter-integrated circuit interface (I2C)

Up to three I2C bus interfaces can operate in multimaster and slave modes. They can
support standard (up to 100 kHz), fast (up to 400 kHz) and fast mode + (up to 1 MHz)
modes.

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All I2C bus interfaces support 7-bit and 10-bit addressing modes, multiple 7-bit slave
addresses (2 addresses, 1 with configurable mask). They also include programmable
analog and digital noise filters.

Table 6. Comparison of I2C analog and digital filters

- Analog filter Digital filter

Pulse width of Programmable length from 1 to 15

≥ 50 ns
suppressed spikes I2C peripheral clocks
1. Extra filtering capability vs.
Benefits Available in Stop mode standard requirements.
2. Stable length
Wakeup from Stop on address
Variations depending on
Drawbacks match is not available when digital
temperature, voltage, process
filter is enabled.

In addition, they provide hardware support for SMBUS 2.0 and PMBUS 1.1: ARP capability,
Host notify protocol, hardware CRC (PEC) generation/verification, timeouts verifications and
ALERT protocol management. They also have a clock domain independent from the CPU
clock, allowing the I2Cx (x=1,2,3) to wake up the MCU from Stop mode on address match.
The I2C interfaces can be served by the DMA controller.
Refer to Table 7 for the features available in I2C1, I2C2 and I2C3.

Table 7. STM32F303xD/E I2C implementation

I2C features(1) I2C1 I2C2 I2C3

7-bit addressing mode X X X

10-bit addressing mode X X X
Standard mode (up to 100 kbit/s) X X X
Fast mode (up to 400 kbit/s) X X X
Fast Mode Plus with 20mA output drive I/Os (up to 1 Mbit/s) X X X
Independent clock X X X
SMBus X X X
Wakeup from STOP X X X
1. X = supported.

3.21 Universal synchronous/asynchronous receiver transmitter

(USART)
The STM32F303xD/E devices have three embedded universal synchronous/asynchronous
receiver transmitters (USART1, USART2 and USART3).
The USART interfaces are able to communicate at speeds of up to 9 Mbit/s.
They provide hardware management of the CTS and RTS signals, they support IrDA SIR
ENDEC, the multiprocessor communication mode, the single-wire half-duplex

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communication mode and have LIN Master/Slave capability. The USART interfaces can be
served by the DMA controller.

3.22 Universal asynchronous receiver transmitter (UART)

The STM32F303xD/E devices have 2 embedded universal asynchronous receiver
transmitters (UART4, and UART5). The UART interfaces support IrDA SIR ENDEC,
multiprocessor communication mode and single-wire half-duplex communication mode. The
UART4 interface can be served by the DMA controller.
Refer to Table 8 for the features available in all U(S)ART interfaces.

Table 8. USART features

USART modes/features(1) USART1 USART2 USART3 UART4 UART5

Hardware flow control for modem X X X - -

Continuous communication using DMA X X X X -
Multiprocessor communication X X X X X
Synchronous mode X X X - -
Smartcard mode X X X - -
Single-wire half-duplex communication X X X X X
IrDA SIR ENDEC block X X X X X
LIN mode X X X X X
Dual clock domain and wakeup from Stop mode X X X X X
Receiver timeout interrupt X X X X X
Modbus communication X X X X X
Auto baud rate detection X X X - -
Driver Enable X X X - -
1. X = supported.

3.23 Serial peripheral interface (SPI)/Inter-integrated sound

interfaces (I2S)
Up to four SPIs are able to communicate up to 18 Mbit/s in slave and master modes in full-
duplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame size is configurable from 4 bits to 16 bits.
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) supporting four different audio
standards can operate as master or slave at half-duplex and full duplex communication
modes. They can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by 8-bit programmable linear prescaler. When operating in master mode
it can output a clock for an external audio component at 256 times the sampling frequency.
Refer to Table 9 for the features available in SPI1, SPI2, SPI3 and SPI4.

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Table 9. STM32F303xD/E SPI/I2S implementation

SPI features(1) SPI1 SPI2 SPI3 SPI4

Hardware CRC calculation X X X X

Rx/Tx FIFO X X X X
NSS pulse mode X X X X
I2S mode - X X -
TI mode X X X X
1. X = supported.

3.24 Controller area network (CAN)

The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.

3.25 Universal serial bus (USB)

The STM32F303xD/E embeds a full-speed USB device peripheral compliant with the USB
specification version 2.0. The USB interface implements a full-speed (12 Mbit/s) function
interface with added support for USB 2.0 Link Power Management. It has software-
configurable endpoint setting with packet memory up-to 1 Kbyte (256 bytes are used for
CAN peripheral if enabled) and suspend/resume support.
The dedicated 48 MHz clock is generated from the internal main PLL (the clock source must
use a HSE crystal oscillator).

3.26 Infrared transmitter

The STM32F303xD/E devices provide an infrared transmitter solution. The solution is based
on internal connections between TIM16 and TIM17 as shown in the figure below.
TIM17 is used to provide the carrier frequency and TIM16 provides the main signal to be
sent. The infrared output signal is available on PB9 or PA13.
To generate the infrared remote control signals, TIM16 channel 1 and TIM17 channel 1 must
be properly configured to generate correct waveforms. All standard IR pulse modulation
modes can be obtained by programming the two timers output compare channels.

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Figure 3. Infrared transmitter

7,0(5 2&

IRUHQYHORS 3%3$

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3.27 Touch sensing controller (TSC)

The STM32F303xD/E devices provide a simple solution for adding capacitive sensing
functionality to any application. These devices offer up to 24 capacitive sensing channels
distributed over 8 analog I/O groups.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic, etc.). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists of
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. To limit the CPU bandwidth usage this acquisition is directly managed by the
hardware touch sensing controller and only requires few external components to operate.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.

Table 10. Capacitive sensing GPIOs available on STM32F303xD/E devices

Capacitive sensing Pin Capacitive sensing Pin
Group - Group
signal name name signal name name

TSC_G1_IO1 PA0 TSC_G5_IO1 PB3

TSC_G1_IO2 PA1 TSC_G5_IO2 PB4
1 5
TSC_G1_IO3 PA2 TSC_G5_IO3 PB6
TSC_G1_IO4 PA3 TSC_G5_IO4 PB7
-
TSC_G2_IO1 PA4 TSC_G6_IO1 PB11
TSC_G2_IO2 PA5 TSC_G6_IO2 PB12
2 6
TSC_G2_IO3 PA6 TSC_G6_IO3 PB13
TSC_G2_IO4 PA7 TSC_G6_IO4 PB14

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Table 10. Capacitive sensing GPIOs available on STM32F303xD/E devices (continued)

Capacitive sensing Pin Capacitive sensing Pin
Group - Group
signal name name signal name name

TSC_G3_IO1 PC5 - TSC_G7_IO1 PE2

TSC_G3_IO2 PB0 - TSC_G7_IO2 PE3
3 7
TSC_G3_IO3 PB1 - TSC_G7_IO3 PE4
TSC_G3_IO4 PB2 - TSC_G7_IO4 PE5
TSC_G4_IO1 PA9 - TSC_G8_IO1 PD12
TSC_G4_IO2 PA10 - TSC_G8_IO2 PD13
4 8
TSC_G4_IO3 PA13 - TSC_G8_IO3 PD14
TSC_G4_IO4 PA14 - TSC_G8_IO4 PD15

Table 11. Number of capacitive sensing channels available on

STM32F303xD/E devices
Number of capacitive sensing channels
Analog I/O group
STM32F303VE/ZE STM32F303RE

G1 3 3
G2 3 3
G3 3 3
G4 3 3
G5 3 3
G6 3 3
G7 3 0
G8 3 0
Number of capacitive sensing
24 18
channels

3.28 Development support

3.28.1 Serial wire JTAG debug port (SWJ-DP)

The ARM SWJ-DP Interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared respectively with SWDIO and SWCLK and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.

3.28.2 Embedded Trace Macrocell

The ARM embedded trace macrocell (ETM™) provides a greater visibility of the instruction
and data flow inside the CPU core by streaming compressed data at a very high rate from
the STM32F303xD/E through a small number of ETM™ pins to an external hardware trace

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Functional overview STM32F303xD STM32F303xE

port analyzer (TPA) device. The TPA is connected to a host computer using a high-speed
channel. Real-time instruction and data flow activity can be recorded and then formatted for
display on the host computer running debugger software. TPA hardware is commercially
available from common development tool vendors. It operates with third party debugger
software tools.

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4 Pinout and pin description

Figure 4. STM32F303xD/E LQFP64 pinout

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966

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3%
3$

3$
3$
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3$

069

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Pinout and pin description STM32F303xD STM32F303xE

Figure 5. STM32F303xD/E LQFP100 pinout

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3& 
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3(   966
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STM32F303xD STM32F303xE Pinout and pin description

Figure 6. STM32F303xD/E LQFP144 pinout

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3*
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3*
3*
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069

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Pinout and pin description STM32F303xD STM32F303xE

Figure 7. STM32F303xD/E WLCSP100 ballout

         

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- 966 3$ 95() 3$

3% 3% 3% 9'' 3% 9''$

. 966 3% 3% 3%

966 3% 3$ 9'' 966 966

06Y9

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STM32F303xD STM32F303xE Pinout and pin description

Figure 8. STM32F303xD/E UFBGA100 ballout

           

3( 3( 3% %227 3' 3' 3% 3% 3$ 3$ 3$ 3$
$

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069

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Table 12. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and
Pin name
after reset is the same as the actual pin name
FT 5 V tolerant I/O
FTf 5 V tolerant I/O, I2C FM+ option
TTa 3.3 V tolerant I/O
I/O structure TC Standard 3.3V I/O
B Dedicated to BOOT0 pin
RST Bi-directional reset pin with embedded weak pull-up resistor
Unless otherwise specified by a note, all I/Os are set as floating inputs during and after
Notes
reset
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin
functions Additional
Functions directly selected/enabled through peripheral registers
functions

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Table 13. STM32F303xD/E pin definitions

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

TRACECK, EVENTOUT,
(1) TIM3_CH1, TSC_G7_IO1,
- 1 B2 D6 1 PE2 I/O FT -
SPI4_SCK, TIM20_CH1,
FMC_A23
TRACED0, EVENTOUT,
(1) TIM3_CH2, TSC_G7_IO2,
- 2 A1 D7 2 PE3 I/O FT -
SPI4_NSS, TIM20_CH2,
FMC_A19
TRACED1, EVENTOUT,
(1) TIM3_CH3, TSC_G7_IO3,
- 3 B1 C8 3 PE4 I/O FT -
SPI4_NSS, TIM20_CH1N,
FMC_A20
TRACED2, EVENTOUT,
(1) TIM3_CH4, TSC_G7_IO4,
- 4 C2 B9 4 PE5 I/O FT -
SPI4_MISO,
TIM20_CH2N, FMC_A21
TRACED3, EVENTOUT,
(1)
- 5 D2 E7 5 PE6 I/O FT SPI4_MOSI, WKUP3, RTC_TAMP3
TIM20_CH3N, FMC_A22
1 6 E2 D8 6 VBAT S - - - -
WKUP2,RTC_TAMP1,
2 7 C1 C9 7 PC13(2) I/O TC - EVENTOUT, TIM1_CH1N
RTC_TS, RTC_OUT
PC14 -
3 8 D1 C10 8 I/O TC - EVENTOUT OSC32_IN
OSC32_IN (2)
PC15 -
4 9 E1 D9 9 I/O TC - EVENTOUT OSC32_OUT
OSC32_OUT(2)

(1) EVENTOUT, TIM20_CH1,

- - - - 10 PH0 I/O FT -
FMC_A0

(1) EVENTOUT, TIM20_CH2,

- - - - 11 PH1 I/O FT -
FMC_A1

(1) EVENTOUT, TIM20_CH3,

- 19 J1 E8 12 PF2 I/O TTa ADC12_IN10
FMC_A2

(1) EVENTOUT, TIM20_CH4,

- - - - 13 PF3 I/O FT -
FMC_A3

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Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

EVENTOUT,
(1)
- - - - 14 PF4 I/O TTa COMP1_OUT, ADC1_IN5(3)
TIM20_CH1N, FMC_A4

(1) EVENTOUT,
- - - - 15 PF5 I/O FT -
TIM20_CH2N, FMC_A5
(1)
- - - - 16 VSS S - - -
- - - - 17 VDD S - (1)
- -
EVENTOUT, TIM4_CH4,
(1) I2C2_SCL,
- 73 C11 C1 18 PF6 I/O FTf -
USART3_RTS,
FMC_NIORD

(1) EVENTOUT, TIM20_BKIN,

- - - - 19 PF7 I/O FT -
FMC_NREG
EVENTOUT,
(1)
- - - - 20 PF8 I/O FT TIM20_BKIN2, -
FMC_NIOWR
EVENTOUT, TIM20_BKIN,
- 10 F2 D10 21 PF9 I/O FT (1)
TIM15_CH1, SPI2_SCK, -
FMC_CD
EVENTOUT,
(1) TIM20_BKIN2,
- 11 G2 E10 22 PF10 I/O FT -
TIM15_CH2, SPI2_SCK,
FMC_INTR
EVENTOUT, I2C2_SDA,
5 12 F1 F10 23 PF0-OSC_IN I FTf - SPI2_NSS/I2S2_WS, OSC_IN
TIM1_CH3N
PF1- EVENTOUT, I2C2_SCL,
6 13 G1 F9 24 O FTf - OSC_OUT
OSC_OUT SPI2_SCK/I2S2_CK
7 14 H2 E9 25 NRST I-O RST - Device reset input/internal reset output (active low)
ADC12_IN6,
8 15 H1 G10 26 PC0 I/O TTa - EVENTOUT, TIM1_CH1
COMP7_INM
ADC12_IN7,
9 16 J2 G9 27 PC1 I/O TTa - EVENTOUT, TIM1_CH2
COMP7_INP
EVENTOUT, TIM1_CH3,
10 17 J3 G8 28 PC2 I/O TTa - ADC12_IN8
COMP7_OUT

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Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

EVENTOUT, TIM1_CH4,
11 18 K2 H10 29 PC3 I/O TTa - ADC12_IN9
TIM1_BKIN2
(1)
12 20 K1 H8 30 VSSA S - - -
(1)
- - - - 31 VREF- S - - -
- 21 M1 J8 32 VREF+(4) S - - - -
13 22 L1 J10 33 VDDA S - - - -
TIM2_CH1/TIM2_ETR,
TSC_G1_IO1, ADC1_IN1(3),
USART2_CTS, COMP1_INM,
14 23 L2 H9 34 PA0 I/O TTa -
COMP1_OUT, RTC_TAMP2,
TIM8_BKIN, TIM8_ETR, WKUP1
EVENTOUT
RTC_REFIN, TIM2_CH2,
ADC1_IN2(3),
TSC_G1_IO2,
COMP1_INP,
15 24 M2 J9 35 PA1 I/O TTa - USART2_RTS,
OPAMP1_VINP,
TIM15_CH1N,
OPAMP3_VINP
EVENTOUT
TIM2_CH3, TSC_G1_IO3,
ADC1_IN3(3),
(5) USART2_TX,
16 25 K3 F7 36 PA2 I/O TTa COMP2_INM,
COMP2_OUT,
OPAMP1_VOUT
TIM15_CH1, EVENTOUT
TIM2_CH4, TSC_G1_IO4, ADC1_IN4(3),
17 26 L3 G7 37 PA3 I/O TTa - USART2_RX, OPAMP1_VINM
TIM15_CH2, EVENTOUT OPAMP,1_VINP
K9,
18 27 D3 38 VSS S - - - -
K10
19 28 H3 K8 39 VDD S - (1)
- -
ADC2_IN1(3),
DAC1_OUT1,
COMP1_INM,
TIM3_CH2, TSC_G2_IO1, COMP2_INM,
(5) SPI1_NSS, COMP3_INM,
20 29 M3 J7 40 PA4 I/O TTa
SPI3_NSS/I2S3_WS, COMP4_INM,
USART2_CK, EVENTOUT COMP5_INM,
COMP6_INM,
COMP7_INM,
OPAMP4_VINP

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Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

ADC2_IN2(3),
DAC1_OUT2,
COMP1_INM,
COMP2_INM,
COMP3_INM,
TIM2_CH1/TIM2_ETR,
(5) COMP4_INM,
21 30 K4 H7 41 PA5 I/O TTa TSC_G2_IO2, SPI1_SCK,
COMP5_INM,
EVENTOUT
COMP6_INM,
COMP7_INM,
OPAMP1_VINP,
OPAMP2_VINM,
OPAMP3_VINP
TIM16_CH1, TIM3_CH1,
TSC_G2_IO3,
(5) TIM8_BKIN, SPI1_MISO, ADC2_IN3(3),
22 31 L4 H6 42 PA6 I/O TTa
TIM1_BKIN, OPAMP2_VOUT
COMP1_OUT,
EVENTOUT
TIM17_CH1, TIM3_CH2, ADC2_IN4(3),
TSC_G2_IO4, COMP2_INP,
23 32 M4 K7 43 PA7 I/O TTa -
TIM8_CH1N, SPI1_MOSI, OPAMP1_VINP,
TIM1_CH1N, EVENTOUT OPAMP2_VINP
EVENTOUT, TIM1_ETR,
24 33 K5 G6 44 PC4 I/O TTa - ADC2_IN5(3)
USART1_TX
EVENTOUT, TIM15_BKIN, ADC2_IN11,
25 34 L5 F6 45 PC5 I/O TTa - TSC_G3_IO1, OPAMP1_VINM,
USART1_RX OPAMP2_VINM
ADC3_IN12,
TIM3_CH3, TSC_G3_IO2,
COMP4_INP,
26 35 M5 J6 46 PB0 I/O TTa - TIM8_CH2N,
OPAMP2_VINP,
TIM1_CH2N, EVENTOUT
OPAMP3_VINP
TIM3_CH4, TSC_G3_IO3,
TIM8_CH3N,
(5) ADC3_IN1(3),
27 36 M6 K6 47 PB1 I/O TTa TIM1_CH3N,
OPAMP3_VOUT
COMP4_OUT,
EVENTOUT
ADC2_IN12,
TSC_G3_IO4,
28 37 L6 K5 48 PB2 I/O TTa - COMP4_INM,
EVENTOUT
OPAMP3_VINM

44/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Pinout and pin description

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

(1)
- - - - 49 PF11 I/O FT EVENTOUT, TIM20_ETR -

(1) EVENTOUT, TIM20_CH1,

- - - - 50 PF12 I/O FT -
FMC_A6
- - - - 51 VSS S - - - -
(1)
- - - - 52 VDD S - - -

(1) EVENTOUT, TIM20_CH2,

- - - - 53 PF13 I/O FT -
FMC_A7

(1) EVENTOUT, TIM20_CH3,

- - - - 54 PF14 I/O FT -
FMC_A8

(1) EVENTOUT, TIM20_CH4,

- - - - 55 PF15 I/O FT -
FMC_A9

(1) EVENTOUT,
- - - - 56 PG0 I/O FT -
TIM20_CH1N, FMC_A10

(1) EVENTOUT,
- - - - 57 PG1 I/O FT -
TIM20_CH2N, FMC_A11

(1) EVENTOUT, TIM1_ETR,

- 38 M7 F8 58 PE7 I/O TTa ADC3_IN13
FMC_D4

(1) EVENTOUT, TIM1_CH1N, ADC34_IN6,

- 39 L7 E6 59 PE8 I/O TTa
FMC_D5 COMP4_INM

(1) EVENTOUT, TIM1_CH1,

- 40 M8 - 60 PE9 I/O TTa ADC3_IN2(3)
FMC_D6
(1)
- - - - 61 VSS S - - -
(1)
- - - - 62 VDD S - - -

(1) EVENTOUT, TIM1_CH2N,

- 41 L8 - 63 PE10 I/O TTa ADC3_IN14
FMC_D7

(1) EVENTOUT, TIM1_CH2,

- 42 M9 H5 64 PE11 I/O TTa ADC3_IN15
SPI4_NSS, FMC_D8

(1) EVENTOUT, TIM1_CH3N,

- 43 L9 G5 65 PE12 I/O TTa ADC3_IN16
SPI4_SCK, FMC_D9

(1) EVENTOUT, TIM1_CH3,

- 44 M10 - 66 PE13 I/O TTa ADC3_IN3(3)
SPI4_MISO, FMC_D10

DocID026415 Rev 5 45/173

67
Pinout and pin description STM32F303xD STM32F303xE

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

EVENTOUT, TIM1_CH4,
(1)
- 45 M11 - 67 PE14 I/O TTa SPI4_MOSI, TIM1_BKIN2, ADC4_IN1(3)
FMC_D11

(1) EVENTOUT, TIM1_BKIN,

- 46 M12 - 68 PE15 I/O TTa ADC4_IN2(3)
USART3_RX, FMC_D12
COMP5_INM,
TIM2_CH3, TSC_SYNC,
29 47 L10 K4 69 PB10 I/O TTa - OPAMP3_VINM,
USART3_TX, EVENTOUT
OPAMP4_VINM
ADC12_IN14,
TIM2_CH4, TSC_G6_IO1,
30 48 L11 K3 70 PB11 I/O TTa - COMP6_INP,
USART3_RX, EVENTOUT
OPAMP4_VINP
K1,
31 49 F12 J1, 71 VSS S - - - -
K2
32 50 G12 J5 72 VDD S - - - -
TSC_G6_IO2,
I2C2_SMBAL, ADC4_IN3(3),
(5)
33 51 L12 J4 73 PB12 I/O TTa SPI2_NSS/I2S2_WS, COMP3_INM,
TIM1_BKIN, USART3_CK, OPAMP4_VOUT
EVENTOUT
TSC_G6_IO3,
ADC3_IN5(3),
SPI2_SCK/I2S2_CK,
COMP5_INP,
34 52 K12 J3 74 PB13 I/O TTa - TIM1_CH1N,
OPAMP3_VINP,
USART3_CTS,
OPAMP4_VINP
EVENTOUT
TIM15_CH1,
TSC_G6_IO4,
ADC4_IN4(3),
SPI2_MISO/I2S2ext_SD,
35 53 K11 J2 75 PB14 I/O TTa - COMP3_INP,
TIM1_CH2N,
OPAMP2_VINP
USART3_RTS,
EVENTOUT
RTC_REFIN, TIM15_CH2,
TIM15_CH1N,
ADC4_IN5(3),
36 54 K10 H4 76 PB15 I/O TTa - TIM1_CH3N,
COMP6_INM
SPI2_MOSI/I2S2_SD,
EVENTOUT

(1) EVENTOUT, ADC4_IN12,

- 55 K9 - 77 PD8 I/O TTa
USART3_TX, FMC_D13 OPAMP4_VINM

46/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Pinout and pin description

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

(1) EVENTOUT,
- 56 K8 G4 78 PD9 I/O TTa ADC4_IN13
USART3_RX, FMC_D14

(1) EVENTOUT, ADC34_IN7,

- 57 J12 H3 79 PD10 I/O TTa
USART3_CK, FMC_D15 COMP6_INM

(1) EVENTOUT, ADC34_IN8,

- 58 J11 H2 80 PD11 I/O TTa
USART3_CTS, FMC_A16 OPAMP4_VINP
EVENTOUT, TIM4_CH1,
- 59 J10 H1 81 PD12 I/O TTa (1)
TSC_G8_IO1, ADC34_IN9
USART3_RTS, FMC_A17

(1) EVENTOUT, TIM4_CH2, ADC34_IN10,

- 60 H12 G3 82 PD13 I/O TTa
TSC_G8_IO2, FMC_A18 COMP5_INM
(1)
- - - - 83 VSS S - - -
- - - - 84 VDD S - (1)
- -

(1) EVENTOUT, TIM4_CH3, ADC34_IN11,

- 61 H11 G2 85 PD14 I/O TTa
TSC_G8_IO3, FMC_D0 OPAMP2_VINP
EVENTOUT, TIM4_CH4,
- 62 H10 G1 86 PD15 I/O TTa (1)
TSC_G8_IO4, SPI2_NSS, COMP3_INM
FMC_D1

(1) EVENTOUT,
- - - - 87 PG2 I/O FT -
TIM20_CH3N, FMC_A12

(1) EVENTOUT, TIM20_BKIN,

- - - - 88 PG3 I/O FT -
FMC_A13

(1) EVENTOUT,
- - - - 89 PG4 I/O FT -
TIM20_BKIN2, FMC_A14

(1) EVENTOUT, TIM20_ETR,

- - - - 90 PG5 I/O FT -
FMC_A15
(1)
- - - - 91 PG6 I/O FT EVENTOUT, FMC_INT2 -
- - - - 92 PG7 I/O FT (1)
EVENTOUT, FMC_INT3 -
(1)
- - - - 93 PG8 I/O FT EVENTOUT -
(1)
- - - - 94 VSS S - - -
- - - - 95 VDD S - (1) - -

DocID026415 Rev 5 47/173

67
Pinout and pin description STM32F303xD STM32F303xE

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

EVENTOUT, TIM3_CH1,
37 63 E12 F4 96 PC6 I/O FT - TIM8_CH1, I2S2_MCK, -
COMP6_OUT
EVENTOUT, TIM3_CH2,
38 64 E11 F2 97 PC7 I/O FT - TIM8_CH2, I2S3_MCK, -
COMP5_OUT
EVENTOUT, TIM3_CH3,
39 65 E10 F1 98 PC8 I/O FT - -
TIM8_CH3, COMP3_OUT
EVENTOUT, TIM3_CH4,
40 66 D12 F3 99 PC9 I/O FTf - I2C3_SDA, TIM8_CH4, -
I2SCKIN, TIM8_BKIN2
MCO, I2C3_SCL,
I2C2_SMBAL, I2S2_MCK,
41 67 D11 F5 100 PA8 I/O FTf - TIM1_CH1, USART1_CK, -
COMP3_OUT, TIM4_ETR,
EVENTOUT
I2C3_SMBAL,
TSC_G4_IO1, I2C2_SCL,
I2S3_MCK, TIM1_CH2,
42 68 D10 E5 101 PA9 I/O FTf - USART1_TX, -
COMP5_OUT,
TIM15_BKIN, TIM2_CH3,
EVENTOUT
TIM17_BKIN,
TSC_G4_IO2, I2C2_SDA,
SPI2_MISO/I2S2ext_SD,
43 69 C12 E1 102 PA10 I/O FTf - -
TIM1_CH3, USART1_RX,
COMP6_OUT, TIM2_CH4,
TIM8_BKIN, EVENTOUT
SPI2_MOSI/I2S2_SD,
TIM1_CH1N,
USART1_CTS,
44 70 B12 E2 103 PA11 I/O FT - USB_DM
COMP1_OUT, CAN_RX,
TIM4_CH1, TIM1_CH4,
TIM1_BKIN2, EVENTOUT

48/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Pinout and pin description

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

TIM16_CH1, I2SCKIN,
TIM1_CH2N,
USART1_RTS,
45 71 A12 D1 104 PA12 I/O FT - USB_DP
COMP2_OUT, CAN_TX,
TIM4_CH2, TIM1_ETR,
EVENTOUT
SWDIO-JTMS,
TIM16_CH1N,
46 72 A11 E3 105 PA13 I/O FT - TSC_G4_IO3, IR-OUT, -
USART3_CTS,
TIM4_CH3, EVENTOUT
(1)
- - - - 106 PH2 I/O FT EVENTOUT -
A1,
47 74 F11 A2, 107 VSS S - - - -
B1
48 75 G11 D2 108 VDD S - - - -
SWCLK-JTCK,
TSC_G4_IO4, I2C1_SDA,
49 76 A10 C2 109 PA14 I/O FTf - -
TIM8_CH2, TIM1_BKIN,
USART2_TX, EVENTOUT
JTDI,
TIM2_CH1/TIM2_ETR,
TIM8_CH1, TSC_SYNC,
50 77 A9 B2 110 PA15 I/O FTf - I2C1_SCL, SPI1_NSS, -
SPI3_NSS/I2S3_WS,
USART2_RX, TIM1_BKIN,
EVENTOUT
EVENTOUT, TIM8_CH1N,
UART4_TX,
51 78 B11 E4 111 PC10 I/O FT - -
SPI3_SCK/I2S3_CK,
USART3_TX
EVENTOUT, TIM8_CH2N,
UART4_RX,
52 79 C10 D3 112 PC11 I/O FT - -
SPI3_MISO/I2S3ext_SD,
USART3_RX

DocID026415 Rev 5 49/173

67
Pinout and pin description STM32F303xD STM32F303xE

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

EVENTOUT, TIM8_CH3N,
UART5_TX,
53 80 B10 A3 113 PC12 I/O FT - -
SPI3_MOSI/I2S3_SD,
USART3_CK

(1) EVENTOUT, CAN_RX,

- 81 C9 B3 114 PD0 I/O FT -
FMC_D2
EVENTOUT, TIM8_CH4,
(1)
- 82 B9 C3 115 PD1 I/O FT TIM8_BKIN2, CAN_TX, -
FMC_D3
EVENTOUT, TIM3_ETR,
54 83 C8 A4 116 PD2 I/O FT - -
TIM8_BKIN, UART5_RX
EVENTOUT,
(1)
- 84 B8 B4 117 PD3 I/O FT TIM2_CH1/TIM2_ETR, -
USART2_CTS, FMC_CLK
EVENTOUT, TIM2_CH2,
(1)
- 85 B7 C4 118 PD4 I/O FT USART2_RTS, -
FMC_NOE

(1) EVENTOUT,
- 86 A6 - 119 PD5 I/O FT -
USART2_TX, FMC_NWE
(1)
- - - - 120 VSS S - - -
(1)
- - - - 121 VDD S - - -
EVENTOUT, TIM2_CH4,
- 87 B6 - 122 PD6 I/O FT (1)
USART2_RX, -
FMC_NWAIT
EVENTOUT, TIM2_CH3,
- 88 A5 D4 123 PD7 I/O FT (1)
USART2_CK, -
FMC_NE1/FMC_NCE2

(1) EVENTOUT,
- - - - 124 PG9 I/O FT -
FMC_NE2/FMC_NCE3

(1) EVENTOUT,
- - - - 125 PG10 I/O FT -
FMC_NCE4_1/FMC_NE3

(1) EVENTOUT,
- - - - 126 PG11 I/O FT -
FMC_NCE4_2
- - - - 127 PG12 I/O FT (1) EVENTOUT, FMC_NE4 -
(1)
- - - - 128 PG13 I/O FT EVENTOUT, FMC_A24 -

50/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Pinout and pin description

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

(1)
- - - - 129 PG14 I/O FT EVENTOUT, FMC_A25 -
- - - - 130 VSS S - (1)
- -
(1)
- - - - 131 VDD S - - -
(1)
- - - - 132 PG15 I/O FT EVENTOUT -
JTDO-TRACESWO,
TIM2_CH2, TIM4_ETR,
TSC_G5_IO1,
55 89 A8 A5 133 PB3 I/O FT - TIM8_CH1N, SPI1_SCK, -
SPI3_SCK/I2S3_CK,
USART2_TX, TIM3_ETR,
EVENTOUT
JTRST, TIM16_CH1,
TIM3_CH1, TSC_G5_IO2,
TIM8_CH2N, SPI1_MISO,
56 90 A7 B5 134 PB4 I/O FT - -
SPI3_MISO/I2S3ext_SD,
USART2_RX,
TIM17_BKIN, EVENTOUT
TIM16_BKIN, TIM3_CH2,
TIM8_CH3N,
I2C1_SMBAl, SPI1_MOSI,
57 91 C5 A6 135 PB5 I/O FTf - -
SPI3_MOSI/I2S3_SD,
USART2_CK, I2C3_SDA,
TIM17_CH1, EVENTOUT
TIM16_CH1N, TIM4_CH1,
TSC_G5_IO3, I2C1_SCL,
58 92 B5 B6 136 PB6 I/O FTf - TIM8_CH1, TIM8_ETR, -
USART1_TX,
TIM8_BKIN2, EVENTOUT
TIM17_CH1N, TIM4_CH2,
TSC_G5_IO4, I2C1_SDA,
59 93 B4 C5 137 PB7 I/O FTf - TIM8_BKIN, USART1_RX, -
TIM3_CH4, FMC_NADV,
EVENTOUT
60 94 A4 A7 138 BOOT0 I - - - -

DocID026415 Rev 5 51/173

67
Pinout and pin description STM32F303xD STM32F303xE

Table 13. STM32F303xD/E pin definitions (continued)

Pin number

I/O structure
Pin type
Pin name
WLCSP100
UFBGA100

Notes
LQFP100

LQFP144
LQFP64

(function after Alternate functions Additional functions

reset)

TIM16_CH1, TIM4_CH3,
TSC_SYNC, I2C1_SCL,
USART3_RX,
61 95 A3 D5 139 PB8 I/O FTf - -
COMP1_OUT, CAN_RX,
TIM8_CH2, TIM1_BKIN,
EVENTOUT
TIM17_CH1, TIM4_CH4,
I2C1_SDA, IR-OUT,
62 96 B3 C6 140 PB9 I/O FTf - USART3_TX, -
COMP2_OUT, CAN_TX,
TIM8_CH3, EVENTOUT
EVENTOUT, TIM4_ETR,
(1)
- 97 C3 B7 141 PE0 I/O FT TIM16_CH1, TIM20_ETR, -
USART1_TX, FMC_NBL0
EVENTOUT, TIM17_CH1,
(1)
- 98 A2 A8 142 PE1 I/O FT TIM20_CH4, -
USART1_RX, FMC_NBL1
63 99 E3 C7 143 VSS S - - - -
A9,
A10
,
64 100 C4 144 VDD S - - - -
B10
,
B8
1. Function availability depends on the chosen device.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch sinks only a limited amount of current (3
mA), the use of GPIO PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED)

After the first backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the Backup registers which is not reset by the main reset. For details on how to manage these GPIOs, refer to
the Battery backup domain and BKP register description sections in the RM0316 reference manual.
3. Fast ADC channel.
4. The VREF+ functionality is not available on the 64-pin package. In this package, the VREF+ is internally connected to
VDDA.
5. These GPIOs offer a reduced touch sensing sensitivity. It is thus recommended to use them as sampling capacitor I/O.

52/173 DocID026415 Rev 5

 STM32F303xD STM32F303xE
Table 14. STM32F303xD/E alternate function mapping
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port I2C3/TIM1 I2C3/TIM /I2S2/SPI3 SPI2/I2S2/ USART1/2
TIM2/15/ I2C1/2/TI I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

TIM2_
TSC_G1 USART2_ COMP1_ TIM8_ TIM8_ EVENT
PA0 - CH1/TIM - - - - - - - -
_IO1 CTS OUT BKIN ETR OUT
2_ETR

RTC_ TIM2_ TSC_G1 USART2_ TIM15_ EVENT

PA1 - - - - - - - - - -
REFIN CH2 _IO2 RTS CH1N OUT
DocID026415 Rev 5

TIM2_ TSC_G1 USART2_ COMP2_ TIM15_ EVENT

PA2 - - - - - - - - - -
CH3 _IO3 TX OUT CH1 OUT

TIM2_ TSC_G1 USART2_ TIM15_ EVENT

PA3 - - - - - - - - - - -
CH4 _IO4 RX CH2 OUT

TIM3_ TSC_G2 SPI3_NSS USART2_ EVENT

PA4 - - SPI1_NSS - - - - - - -
CH2 _IO1 /I2S3_WS CK OUT
Port A

TIM2_
TSC_G2 EVENT
PA5 - CH1/TIM - - SPI1_SCK - - - - - - - - -
_IO2 OUT
2_ETR

TIM16_ TIM3_ TSC_G2 TIM8_BKI SPI1_ TIM1_ COMP1_ EVENT

PA6 - - - - - - - -

Pinout and pin description

CH1 CH1 _IO3 N MISO BKIN OUT OUT

TIM17_ TIM3_ TSC_G2 TIM8_CH SPI1_ TIM1_ EVENT

PA7 - - - - - - - - -
CH1 CH2 _IO4 1N MOSI CH1N OUT

I2C3_ I2C2_ I2S2_ TIM1_ USART1_ COMP3_ TIM4_ EVENT

PA8 MCO - - - - - - -
SCL SMBAL MCK CH1 CK OUT ETR OUT

I2C3_ TSC_G4 I2S3_ TIM1_ USART1_ COMP5_ TIM15_ TIM2_ EVENT

PA9 - - I2C2_SCL - - - -
SMBAL _IO1 MCK CH2 TX OUT BKIN CH3 OUT
53/173
 Table 14. STM32F303xD/E alternate function mapping (continued)
54/173

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

SPI2_MIS
TIM17_ TSC_G4 TIM1_ USART1_ COMP6_ TIM2_ TIM8_B EVENT
PA10 - - I2C2_SDA O/I2S2ext - - - -
BKIN _IO2 CH3 RX OUT CH4 KIN OUT
_SD

SPI2_MO
TIM1_ USART1_ COMP1_ TIM4_ TIM1_ TIM1_ EVENT
PA11 - - - - - SI/I2S2_ CAN_RX - -
CH1N CTS OUT CH1 CH4 BKIN2 OUT
SD
DocID026415 Rev 5

TIM16_ TIM1_ USART1_ COMP2_ TIM4_ TIM1_ EVENT

PA12 - - - - I2SCKIN CAN_TX - - -
Port A

CH1 CH2N RTS OUT CH2 ETR OUT

SWDIO- TIM16_ TSC_G4 USART3_ TIM4_ EVENT

PA13 - - IR-OUT - - - - - - -
JTMS CH1N _IO3 CTS CH3 OUT

SWCLK- TSC_G4 TIM8_ TIM1_ USART2_ EVENT

PA14 - - I2C1_SDA - - - - - - -
JTCK _IO4 CH2 BKIN TX OUT

TIM2_
TIM8_ TSC_ SPI3_NSS USART2_ TIM1_ EVENT
PA15 JTDI CH1/TIM I2C1_SCL SPI1_NSS - - - - - -
CH1 SYNC /I2S3_WS RX BKIN OUT
2_ETR

TIM3_ TSC_G3 TIM8_ TIM1_ EVENT

PB0 - - - - - - - - - - -

STM32F303xD STM32F303xE
CH3 _IO2 CH2N CH2N OUT

TIM3_ TSC_G3 TIM8_ TIM1_ COMP4_ EVENT

PB1 - - - - - - - - - -
CH4 _IO3 CH3N CH3N OUT OUT
Port B

TSC_G3 EVENT
PB2 - - - - - - - - - - - - - -
_IO4 OUT

JTDO-
TIM2_ TIM4_ TSC_G5 TIM8_ SPI3_SCK USART2_ TIM3_ EVENT
PB3 TRACES SPI1_SCK - - - - - -
CH2 ETR _IO1 CH1N /I2S3_CK TX ETR OUT
WO
 Table 14. STM32F303xD/E alternate function mapping (continued)

STM32F303xD STM32F303xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

SPI3_MIS
TIM16_ TIM3_ TSC_G5 TIM8_ SPI1_ USART2_ TIM17_ EVENT
PB4 JTRST O/I2S3ext - - - - - -
CH1 CH1 _IO2 CH2N MISO RX BKIN OUT
_SD

SPI3_MO
TIM16_ TIM3_ TIM8_ I2C1_ SPI1_ USART2_ TIM17_ EVENT
PB5 - SI/I2S3_ I2C3_SDA - - - - -
BKIN CH2 CH3N SMBAl MOSI CK CH1 OUT
SD
DocID026415 Rev 5

TIM16_ TIM4_ TSC_G5 TIM8_ TIM8_ USART1_ TIM8_ EVENT

PB6 - I2C1_SCL - - - - - -
CH1N CH1 _IO3 CH1 ETR TX BKIN2 OUT

TIM17_ TIM4_ TSC_G5 TIM8_ USART1_ TIM3_ FMC_ EVENT

PB7 - I2C1_SDA - - - - - -
CH1N CH2 _IO4 BKIN RX CH4 NADV OUT

TIM16_ TIM4_ TSC_ USART3_ COMP1_ TIM8_ TIM1_ EVENT

PB8 - I2C1_SCL - - CAN_RX - - -
CH1 CH3 SYNC RX OUT CH2 BKIN OUT
Port B

TIM17_ TIM4_ USART3_ COMP2_ TIM8_ EVENT

PB9 - - I2C1_SDA - IR-OUT CAN_TX - - - -
CH1 CH4 TX OUT CH3 OUT

TIM2_ TSC_ USART3_ EVENT

PB10 - - - - - - - - - - - -
CH3 SYNC TX OUT

TIM2_ TSC_G6 USART3_ EVENT

Pinout and pin description

PB11 - - - - - - - - - - - -
CH4 _IO1 RX OUT

TSC_G6 I2C2_ SPI2_NSS TIM1_ USART3_ EVENT

PB12 - - - - - - - - - -
_IO2 SMBAL /I2S2_WS BKIN CK OUT

TSC_G6 SPI2_SCK TIM1_ USART3_ EVENT

PB13 - - - - - - - - - - -
_IO3 /I2S2_CK CH1N CTS OUT
55/173
 Table 14. STM32F303xD/E alternate function mapping (continued)
56/173

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

SPI2_MIS
TIM15_ TSC_G6 TIM1_ USART3_ EVENT
PB14 - - - O/I2S2ext - - - - - - -
CH1 _IO4 CH2N RTS OUT
_SD

SPI2_MO
RTC_ TIM15_ TIM15_ TIM1_ EVENT
PB15 - SI/I2S2_S - - - - - - - - -
Port B

REFIN CH2 CH1N CH3N OUT

D
DocID026415 Rev 5

EVENT TIM1_
PC0 - - - - - - - - - - - - - -
OUT CH1

EVENT TIM1_
PC1 - - - - - - - - - - - - - -
OUT CH2

EVENT TIM1_ COMP7_

PC2 - - - - - - - - - - - - -
OUT CH3 OUT

EVENT TIM1_ TIM1_

PC3 - - - - - - - - - - - - -
OUT CH4 BKIN2

EVENT TIM1_ USART1_

PC4 - - - - - - - - - - - - -
OUT ETR TX
Port C

STM32F303xD STM32F303xE
EVENT TIM15_ TSC_G3 USART1_
PC5 - - - - - - - - - - - -
OUT BKIN _IO1 RX

EVENT TIM3_ TIM8_ I2S2_ COMP6_O

PC6 - - - - - - - - - - -
OUT CH1 CH1 MCK UT

EVENT TIM3_ TIM8_ I2S3_ COMP5_O

PC7 - - - - - - - - - - -
OUT CH2 CH2 MCK UT

EVENT TIM3_ TIM8_ COMP3_O

PC8 - - - - - - - - - - - -
OUT CH3 CH3 UT

EVENT TIM3_ I2C3_ TIM8_ TIM8_

PC9 - I2SCKIN - - - - - - - - -
OUT CH4 SDA CH4 BKIN2
 Table 14. STM32F303xD/E alternate function mapping (continued)

STM32F303xD STM32F303xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT TIM8_ UART4_ SPI3_SCK USART3_

PC10 - - - - - - - - - - -
OUT CH1N TX /I2S3_CK TX

SPI3_MIS
EVENT TIM8_ UART4_ USART3_
PC11 - - - O/I2S3ext - - - - - - - -
OUT CH2N RX RX
_SD
DocID026415 Rev 5

SPI3_MO
Port C

EVENT TIM8_ UART5_ USART3_

PC12 - - - SI/I2S3_ - - - - - - - -
OUT CH3N TX CK
SD

EVENT TIM1_
PC13 - - - - - - - - - - - - - -
OUT CH1N

EVENT
PC14 - - - - - - - - - - - - - - -
OUT

EVENT
PC15 - - - - - - - - - - - - - - -
OUT

EVENT
PD0 - - - - - - CAN_RX - - - - FMC_D2 - - -
OUT

Pinout and pin description

EVENT TIM8_ TIM8_
PD1 - - - CAN_TX - - - - FMC_D3 - - -
OUT CH4 BKIN2

EVENT TIM3_ TIM8_ UART5_

PD2 - - - - - - - - - - - -
Port D

OUT ETR BKIN RX

TIM2_CH
EVENT USART2_ FMC_
PD3 - 1/TIM2_ - - - - - - - - - - -
OUT CTS CLK
ETR

EVENT TIM2_ USART2_ FMC_

57/173

PD4 - - - - - - - - - - - -
OUT CH2 RTS NOE
 Table 14. STM32F303xD/E alternate function mapping (continued)
58/173

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT USART2_ FMC_

PD5 - - - - - - - - - - - - -
OUT TX NWE

EVENT TIM2_ USART2_ FMC_

PD6 - - - - - - - - - - - -
OUT CH4 RX NWAIT

FMC_NE
EVENT TIM2_ USART2_
PD7 - - - - - - - - - 1/FMC_ - - -
DocID026415 Rev 5

OUT CH3 CK
NCE2

EVENT USART3_ FMC_

PD8 - - - - - - - - - - - - -
OUT TX D13

EVENT USART3_ FMC_

PD9 - - - - - - - - - - - - -
OUT RX D14
Port D

EVENT USART3_ FMC_

PD10 - - - - - - - - - - - - -
OUT CK D15

EVENT USART3_ FMC_

PD11 - - - - - - - - - - - - -
OUT CTS A16

EVENT TIM4_ TSC_G8 USART3_ FMC_

PD12 - - - - - - - - - - -

STM32F303xD STM32F303xE
OUT CH1 _IO1 RTS A17

EVENT TIM4_ TSC_G8 FMC_

PD13 - - - - - - - - - - - -
OUT CH2 _IO2 A18

EVENT TIM4_ TSC_G8

PD14 - - - - - - - - - FMC_D0 - - -
OUT CH3 _IO3

EVENT TIM4_ TSC_G8

PD15 - - - SPI2_NSS - - - - - FMC_D1 - - -
OUT CH4 _IO4
 Table 14. STM32F303xD/E alternate function mapping (continued)

STM32F303xD STM32F303xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT TIM4_ TIM16_ TIM20_ USART1_ FMC_

PE0 - - - - - - - - - -
OUT ETR CH1 ETR TX NBL0

EVENT TIM17_ TIM20_ USART1_ FMC_

PE1 - - - - - - - - - - -
OUT CH1 CH4 RX NBL1

EVENT TIM3_ TSC_G7 TIM20_ FMC_

PE2 TRACECK - SPI4_SCK - - - - - - - -
OUT CH1 _IO1 CH1 A23
DocID026415 Rev 5

EVENT TIM3_ TSC_G7 TIM20_ FMC_

PE3 TRACED0 - SPI4_NSS - - - - - - - -
OUT CH2 _IO2 CH2 A19

EVENT TIM3_ TSC_G7 TIM20_ FMC_

PE4 TRACED1 - SPI4_NSS - - - - - - - -
OUT CH3 _IO3 CH1N A20

EVENT TIM3_ TSC_G7 SPI4_ TIM20_ FMC_

PE5 TRACED2 - - - - - - - - -
OUT CH4 _IO4 MISO CH2N A21
Port E

EVENT SPI4_ TIM20_ FMC_

PE6 TRACED3 - - - - - - - - - - -
OUT MOSI CH3N A22

EVENT TIM1_
PE7 - - - - - - - - - - FMC_D4 - - -
OUT ETR

EVENT TIM1_

Pinout and pin description

PE8 - - - - - - - - - - FMC_D5 - - -
OUT CH1N

EVENT TIM1_
PE9 - - - - - - - - - - FMC_D6 - - -
OUT CH1

EVENT TIM1_
PE10 - - - - - - - - - - FMC_D7 - - -
OUT CH2N

EVENT TIM1_
PE11 - - - SPI4_NSS - - - - - - FMC_D8 - - -
OUT CH2
59/173
 Table 14. STM32F303xD/E alternate function mapping (continued)
60/173

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT TIM1_
PE12 - - - SPI4_SCK - - - - - - FMC_D9 - - -
OUT CH3N

EVENT TIM1_ SPI4_ FMC_

PE13 - - - - - - - - - - - -
OUT CH3 MISO D10
Port E

EVENT TIM1_ SPI4_ TIM1_ FMC_

PE14 - - - - - - - - - - -
OUT CH4 MOSI BKIN2 D11
DocID026415 Rev 5

EVENT TIM1_ USART3_ FMC_

PE15 - - - - - - - - - - - -
OUT BKIN RX D12

EVENT SPI2_NSS TIM1_

PF0 - - - I2C2_SDA - - - - - - - - -
OUT /I2S2_WS CH3N

EVENT SPI2_SCK
PF1 - - - I2C2_SCL - - - - - - - - - -
OUT /I2S2_CK

EVENT TIM20_
PF2 - - - - - - - - - - FMC_A2 - - -
OUT CH3

STM32F303xD STM32F303xE
Port F

EVENT TIM20_
PF3 - - - - - - - - - - FMC_A3 - - -
OUT CH4

EVENT COMP1_ TIM20_

PF4 - - - - - - - - - FMC_A4 - - -
OUT OUT CH1N

EVENT TIM20_
PF5 - - - - - - - - - - FMC_A5 - - -
OUT CH2N

EVENT TIM4_ USART3_ FMC_

PF6 - - I2C2_SCL - - - - - - - - -
OUT CH4 RTS NIORD

EVENT TIM20_ FMC_

PF7 - - - - - - - - - - - - -
OUT BKIN NREG
 Table 14. STM32F303xD/E alternate function mapping (continued)

STM32F303xD STM32F303xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT TIM20_ FMC_

PF8 - - - - - - - - - - - - -
OUT BKIN2 NIOWR

EVENT TIM20_ TIM15_

PF9 - - SPI2_SCK - - - - - - FMC_CD - - -
OUT BKIN CH1

EVENT TIM20_ TIM15_ FMC_

PF10 - - SPI2_SCK - - - - - - - - -
OUT BKIN2 CH2 INTR
DocID026415 Rev 5

EVENT TIM20_
PF11 - - - - - - - - - - - - - -
OUT ETR
Port F

EVENT TIM20_
PF12 - - - - - - - - - - FMC_A6 - - -
OUT CH1

EVENT TIM20_
PF13 - - - - - - - - - - FMC_A7 - - -
OUT CH2

EVENT TIM20_
PF14 - - - - - - - - - - FMC_A8 - - -
OUT CH3

EVENT TIM20_
PF15 - - - - - - - - - - FMC_A9 - - -
OUT CH4

EVENT TIM20_ FMC_

Pinout and pin description

PG0 - - - - - - - - - - - - -
OUT CH1N A10

EVENT TIM20_ FMC_

PG1 - - - - - - - - - - - - -
OUT CH2N A11
Port G

EVENT TIM20_ FMC_

PG2 - - - - - - - - - - - - -
OUT CH3N A12

EVENT TIM20_ FMC_

PG3 - - - - - - - - - - - - -
OUT BKIN A13

EVENT TIM20_ FMC_

61/173

PG4 - - - - - - - - - - - - -
OUT BKIN2 A14
 Table 14. STM32F303xD/E alternate function mapping (continued)
62/173

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT TIM20_ FMC_

PG5 - - - - - - - - - - - - -
OUT ETR A15

EVENT FMC_
PG6 - - - - - - - - - - - - - -
OUT INT2

EVENT FMC_
PG7 - - - - - - - - - - - - - -
OUT INT3
DocID026415 Rev 5

EVENT
PG8 - - - - - - - - - - - - - - -
OUT

FMC_NE
EVENT
PG9 - - - - - - - - - - - 2/FMC_ - - -
OUT
NCE3
Port G

FMC_
EVENT NCE4_1/
PG10 - - - - - - - - - - - - - -
OUT FMC_
NE3

EVENT FMC_
PG11 - - - - - - - - - - - - - -
OUT NCE4_2

STM32F303xD STM32F303xE
EVENT FMC_
PG12 - - - - - - - - - - - - - -
OUT NE4

EVENT FMC_
PG13 - - - - - - - - - - - - - -
OUT A24

EVENT FMC_
PG14 - - - - - - - - - - - - - -
OUT A25

EVENT
PG15 - - - - - - - - - - - - - - -
OUT
 Table 14. STM32F303xD/E alternate function mapping (continued)

STM32F303xD STM32F303xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SPI1/SPI2
Port TIM2/15/
I2C3/TIM1 I2C3/TIM
I2C1/2/TI
/I2S2/SPI3 SPI2/I2S2/ USART1/2
I2C3/GPC
/2/3/4/8/20 8/20/15/G /I2S3/SPI4 SPI3/I2S3/ /3/CAN/GP CAN/TIM1 TIM2/3/ FSMC
SYS_AF 16/17/E M1/8/16/ OMP1/2/3/ TIM1/8 - - EVENT
/15/GPCO PCOMP7 /UART4/5/ TIM1/8/20/ COMP3/5/ /8/15 4/8/17 /TIM1
VENT 17 4/5/6
MP1 /TSC TIM8/Infra Infrared 6
red

EVENT TIM20_
PH0 - - - - - - - - - - FMC_A0 - - -
OUT CH1
Port H

EVENT TIM20_
PH1 - - - - - - - - - - FMC_A1 - - -
OUT CH2

EVENT
PH2 - - - - - - - - - - - - - - -
OUT
DocID026415 Rev 5

Pinout and pin description

63/173
Memory mapping STM32F303xD STM32F303xE

5 Memory mapping

Figure 9. STM32F303xD/E memory map

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64/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Memory mapping

Table 15. Memory map, peripheral register boundary addresses

Size
Bus Boundary address Peripheral
(bytes)

0xA000 0000 - 0xA000 0FFF 4K FSMC control registers

AHB4 0x8000 0000 - 0x9FFF FFFF 512 M FSMC Banks 3 and 4
0x6000 0000 - 0x7FFF FFFF 512 M FSMC Banks 1 and 2
- 0x5000 0800 - 0x5FFF FFFF 384 M Reserved
0x5000 0400 - 0x5000 07FF 1K ADC3 - ADC4
AHB3
0x5000 0000 - 0x5000 03FF 1K ADC1 - ADC2
- 0x4800 2000 - 0x4FFF FFFF ~132 M Reserved
0x4800 1C00 - 0x4800 1FFF 1K GPIOH
0x4800 1800 - 0x4800 1BFF 1K GPIOG
0x4800 1400 - 0x4800 17FF 1K GPIOF
0x4800 1000 - 0x4800 13FF 1K GPIOE
AHB2
0x4800 0C00 - 0x4800 0FFF 1K GPIOD
0x4800 0800 - 0x4800 0BFF 1K GPIOC
0x4800 0400 - 0x4800 07FF 1K GPIOB
0x4800 0000 - 0x4800 03FF 1K GPIOA
- 0x4002 4400 - 0x47FF FFFF ~128 M Reserved
0x4002 4000 - 0x4002 43FF 1K TSC
0x4002 3400 - 0x4002 3FFF 3K Reserved
0x4002 3000 - 0x4002 33FF 1K CRC
0x4002 2400 - 0x4002 2FFF 3K Reserved
0x4002 2000 - 0x4002 23FF 1K Flash interface
AHB1
0x4002 1400 - 0x4002 1FFF 3K Reserved
0x4002 1000 - 0x4002 13FF 1K RCC
0x4002 0800 - 0x4002 0FFF 2K Reserved
0x4002 0400 - 0x4002 07FF 1K DMA2
0x4002 0000 - 0x4002 03FF 1K DMA1

DocID026415 Rev 5 65/173

67
Memory mapping STM32F303xD STM32F303xE

Table 15. Memory map, peripheral register boundary addresses (continued)

Size
Bus Boundary address Peripheral
(bytes)

- 0x4001 8000 - 0x4001 FFFF 32 K Reserved

0x4001 5400 - 0x4001 7FFF 11 K Reserved
0x4001 5000 - 0x4001 53FF 1K TIM20
0x4001 4C00 - 0x4001 4FFF 1K Reserved
0x4001 4800 - 0x4001 4BFF 1K TIM17
0x4001 4400 - 0x4001 47FF 1K TIM16
0x4001 4000 - 0x4001 43FF 1K TIM15
0x4001 3C00 - 0x4001 3FFF 1K SPI4
0x4001 3800 - 0x4001 3BFF 1K USART1
0x4001 3400 - 0x4001 37FF 1K TIM8
0x4001 3000 - 0x4001 33FF 1K SPI1
0x4001 2C00 - 0x4001 2FFF 1K TIM1
0x4001 0800 - 0x4001 2BFF 9K Reserved
APB2
0x4001 0400 - 0x4001 07FF 1K EXTI
0x4001 0000 - 0x4001 03FF 1K SYSCFG + COMP + OPAMP
- 0x4000 7C00 - 0x4000 FFFF 32 K Reserved

66/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Memory mapping

Table 15. Memory map, peripheral register boundary addresses (continued)

Size
Bus Boundary address Peripheral
(bytes)

0x4000 7800 - 0x4000 7BFF 1K I2C3

0x4000 7400 - 0x4000 77FF 1K DAC
0x4000 7000 - 0x4000 73FF 1K PWR
0x4000 6800 - 0x4000 6FFF 2K Reserved
0x4000 6400 - 0x4000 67FF 1K bxCAN
0x4000 6000 - 0x4000 63FF 1K USB/CAN SRAM
0x4000 5C00 - 0x4000 5FFF 1K USB device FS
0x4000 5800 - 0x4000 5BFF 1K I2C2
0x4000 5400 - 0x4000 57FF 1K I2C1
0x4000 5000 - 0x4000 53FF 1K UART5
0x4000 4C00 - 0x4000 4FFF 1K UART4
0x4000 4800 - 0x4000 4BFF 1K USART3
0x4000 4400 - 0x4000 47FF 1K USART2
0x4000 4000 - 0x4000 43FF 1K I2S3ext
APB1
0x4000 3C00 - 0x4000 3FFF 1K SPI3/I2S3
0x4000 3800 - 0x4000 3BFF 1K SPI2/I2S2
0x4000 3400 - 0x4000 37FF 1K I2S2ext
0x4000 3000 - 0x4000 33FF 1K IWDG
0x4000 2C00 - 0x4000 2FFF 1K WWDG
0x4000 2800 - 0x4000 2BFF 1K RTC
0x4000 1800 - 0x4000 27FF 4K Reserved
0x4000 1400 - 0x4000 17FF 1K TIM7
0x4000 1000 - 0x4000 13FF 1K TIM6
0x4000 0C00 - 0x4000 0FFF 1K Reserved
0x4000 0800 - 0x4000 0BFF 1K TIM4
0x4000 0400 - 0x4000 07FF 1K TIM3
0x4000 0000 - 0x4000 03FF 1K TIM2

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6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 2.0 to 3.6 V.
They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 10.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 11.

Figure 10. Pin loading conditions Figure 11. Pin input voltage

0&8SLQ 0&8SLQ
& S) 9,1

069 069

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6.1.6 Power supply scheme

Figure 12. Power supply scheme

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1. Dotted lines represent the internal connections on low pin count packages, joining the dedicated supply
pins.
Caution: Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.

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6.1.7 Current consumption measurement

Figure 13. Current consumption measurement scheme

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6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 16: Voltage characteristics,
Table 17: Current characteristics, and Table 18: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

Table 16. Voltage characteristics(1)

Symbol Ratings Min Max Unit

External main supply voltage (including VDDA, VBAT

VDD–VSS -0.3 4.0
and VDD)
VDD–VDDA Allowed voltage difference for VDD > VDDA - 0.4 V
VREF+–VDDA(2) Allowed voltage difference for VREF+ > VDDA - 0.4
Input voltage on FT and FTf pins VSS −0.3 VDD + 4.0
Input voltage on TTa pins VSS −0.3 4.0
VIN(3) Input voltage on any other pin VSS − 0.3 4.0 V
Input voltage on Boot0 pin 0 9
|ΔVDDx| Variations between different VDD power pins - 50
mV
|VSSX − VSS| Variations between all the different ground pins - 50
Electrostatic discharge voltage (human body see Section 6.3.13: Electrical
VESD(HBM) -
model) sensitivity characteristics
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range. The following relationship must be respected between VDDA and VDD:
VDDA must power on before or at the same time as VDD in the power up sequence.
VDDA must be greater than or equal to VDD.
2. VREF+ must be always lower or equal than VDDA (VREF+ ≤VDDA). If unused then it must be connected to VDDA.
3. VIN maximum must always be respected. Refer to Table 17: Current characteristics for the maximum allowed injected
current values.

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Table 17. Current characteristics

Symbol Ratings Max. Unit

ΣIVDD Total current into sum of all VDD_x power lines (source) 160
ΣIVSS Total current out of sum of all VSS_x ground lines (sink) -160
(1)
IVDD Maximum current into each VDD_x power line (source) 100
IVSS Maximum current out of each VSS _x ground line (sink)(1) 100
Output current sunk by any I/O and control pin 25
IIO(PIN)
Output current source by any I/O and control pin -25
mA
(2)
Total output current sunk by sum of all IOs and control pins 80
ΣIIO(PIN)
Total output current sourced by sum of all IOs and control pins(2) -80
Injected current on FT, FTf, and B pins(3) -5/+0
IINJ(PIN) Injected current on TC and RST pin(4) ±5
(5)
Injected current on TTa pins ±5
ΣIINJ(PIN) Total injected current (sum of all I/O and control pins)(6) ±25
1. All main power (VDD, VDDA) and ground (VSS and VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. A positive injection is induced by VIN > VDD while a negative injection is induced by VIN< VSS. IINJ(PIN) must never be
exceeded. Refer to Table 16: Voltage characteristics for the maximum allowed input voltage values.
5. A positive injection is induced by VIN > VDDA while a negative injection is induced by VIN< VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 16: Voltage characteristics for the maximum allowed input voltage values. Negative injection
disturbs the analog performance of the device. See note (2) below Table 81.
6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 18. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range -65 to +150 °C

TJ Maximum junction temperature 150 °C

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6.3 Operating conditions

6.3.1 General operating conditions

Table 19. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 72

fPCLK1 Internal APB1 clock frequency - 0 36 MHz
fPCLK2 Internal APB2 clock frequency - 0 72
VDD Standard operating voltage - 2 3.6 V
Analog operating voltage
Must have a potential 2 3.6
(OPAMP and DAC not used)
VDDA equal to or higher than V
Analog operating voltage VDD 2.4 3.6
(OPAMP and DAC used)
VBAT Backup operating voltage - 1.65 3.6 V
TC I/O -0.3 VDD+0.3
TTa I/O -0.3 VDDA+0.3
VIN I/O input voltage FT and FTf I/O(1) -0.3 5.5 V
BOOT0 0 5.5
LQFP144 - 606
WLCSP100 - 454
Power dissipation at TA =
PD 85 °C for suffix 6 or TA = LQFP100 - 476 mW
105 °C for suffix 7(2)
UFBGA100 - 339
LQFP64 - 435
Maximum power
Ambient temperature for 6 -40 85
dissipation °C
suffix version
Low power dissipation(3) -40 105
TA
Maximum power
Ambient temperature for 7 -40 105
dissipation °C
suffix version
Low power dissipation(3) -40 125
6 suffix version -40 105
TJ Junction temperature range °C
7 suffix version -40 125
1. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.7: Thermal
characteristics).
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Section 7.7: Thermal characteristics).

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6.3.2 Operating conditions at power-up / power-down

The parameters given in Table 20 are derived from tests performed under the ambient
temperature condition summarized in Table 19.

Table 20. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

VDD rise time rate 0 ∞

tVDD -
VDD fall time rate 20 ∞
µs/V
VDDA rise time rate 0 ∞
tVDDA -
VDDA fall time rate 20 ∞

6.3.3 Embedded reset and power control block characteristics

The parameters given in Table 21 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 19.

Table 21. Embedded reset and power control block characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

Power on/power down Falling edge 1.8(2) 1.88 1.96 V

VPOR/PDR(1)
reset threshold Rising edge 1.84 1.92 2.0 V
(1)
VPDRhyst PDR hysteresis - - 40 - mV
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.

Table 22. Programmable voltage detector characteristics

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Rising edge 2.1 2.18 2.26

VPVD0 PVD threshold 0
Falling edge 2 2.08 2.16
Rising edge 2.19 2.28 2.37
VPVD1 PVD threshold 1
Falling edge 2.09 2.18 2.27
Rising edge 2.28 2.38 2.48
VPVD2 PVD threshold 2
Falling edge 2.18 2.28 2.38
V
Rising edge 2.38 2.48 2.58
VPVD3 PVD threshold 3
Falling edge 2.28 2.38 2.48
Rising edge 2.47 2.58 2.69
VPVD4 PVD threshold 4
Falling edge 2.37 2.48 2.59
Rising edge 2.57 2.68 2.79
VPVD5 PVD threshold 5
Falling edge 2.47 2.58 2.69

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Table 22. Programmable voltage detector characteristics (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Rising edge 2.66 2.78 2.9

VPVD6 PVD threshold 6
Falling edge 2.56 2.68 2.8
V
Rising edge 2.76 2.88 3
VPVD7 PVD threshold 7
Falling edge 2.66 2.78 2.9
VPVDhyst(2) PVD hysteresis - - 100 - mV
PVD current
IDD(PVD) - - 0.15 0.26 µA
consumption
1. Data based on characterization results only, not tested in production.
2. Guaranteed by design, not tested in production.

6.3.4 Embedded reference voltage

The parameters given in Table 23 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 19.

Table 23. Embedded internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit
–40 °C < TA < +105 °C 1.16 1.2 1.25 V
VREFINT Internal reference voltage
–40 °C < TA < +85 °C 1.16 1.2 1.24(1) V
ADC sampling time when
TS_vrefint reading the internal - 2.2 - - µs
reference voltage
Internal reference voltage
VRERINT spread over the VDD = 3 V ±10 mV - - 10(2) mV
temperature range
TCoeff Temperature coefficient - - - 100(2) ppm/°C
1. Data based on characterization results, not tested in production.
2. Guaranteed by design, not tested in production.

Table 24. Internal reference voltage calibration values

Calibration value name Description Memory address

Raw data acquired at

VREFINT_CAL temperature of 30 °C 0x1FFF F7BA - 0x1FFF F7BB
VDDA= 3.3 V

6.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.

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All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
Note: The total current consumption is the sum of IDD and IDDA.

Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in input mode with a static value at VDD or VSS (no load)
• All peripherals are disabled except when explicitly mentioned
• The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0
to 24 MHz,1 wait state from 24 to 48 MHz and 2 wait states from 48 to 72 MHz)
• Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
• When the peripherals are enabled fPCLK2 = fHCLK and fPCLK1 = fHCLK/2
• When fHCLK > 8 MHz, the PLL is ON and the PLL input is equal to HSI/2 (4 MHz) or
HSE (8 MHz) in bypass mode.
The parameters given in Table 25 to Table 29 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 19.

Table 25. Typical and maximum current consumption from VDD supply at VDD = 3.6V
All peripherals enabled All peripherals disabled

Symbol Parameter Conditions fHCLK Max @ TA(1) Max @ TA(1) Unit

Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

72 MHz 66.4 76.5 76.9 77.4 33.0 37.2 38.1 38.9

64 MHz 59.8 66.4 67.7 68.6 29.7 33.5 34.3 35.0
48 MHz 47.3 53.7 53.8 55.1 23.2 26.2 27.1 28.0
External
clock (HSE 32 MHz 33.3 36.8 37.4 38.5 16.8 19.8 20.6 21.4
bypass)
Supply 24 MHz 26.0 29.4 30.0 31.2 13.5 16.6 17.4 18.6
current in 8 MHz 10.7 13.8 14.4 15.3 6.63 10.2 10.5 11.2
IDD Run mode,
executing 1 MHz 4.27 7.47 8.13 8.90 3.78 7.40 7.70 8.50
from Flash 64 MHz 55.6 59.6 62.8 63.2 29.4 33.1 34.5 35.0
48 MHz 43.6 47.0 49.2 50.1 23.1 26.2 27.1 28.0
Internal mA
32 MHz 30.8 33.6 35.3 35.8 16.7 19.8 20.6 21.5
clock (HSI)
24 MHz 24.0 28.0 28.2 29.7 13.5 16.5 17.5 18.4
8 MHz 10.5 13.6 14.7 15.2 6.63 9.74 10.6 11.2
(2)
72 MHz 66.2 76.2 76.7 77.2(2) 32.8 36.9(2) 37.7 38.5(2)

Supply 64 MHz 59.6 66.2 67.6 68.4 29.3 33.1 33.9 34.4
current in External 48 MHz 47.0 53.4 53.6 54.9 22.4 25.6 26.2 27.2
IDD Run mode, clock (HSE
executing bypass) 32 MHz 33.0 36.6 37.2 38.1 16.0 19.0 19.5 20.4
from RAM 24 MHz 25.6 29.0 29.5 30.6 12.8 15.7 16.3 17.6
8 MHz 10.3 13.4 13.8 14.7 6.40 9.48 9.93 10.90

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Table 25. Typical and maximum current consumption from VDD supply at VDD = 3.6V (continued)
All peripherals enabled All peripherals disabled

Symbol Parameter Conditions fHCLK Max @ TA(1) Max @ TA(1) Unit

Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

External
clock (HSE 1 MHz 3.92 7.06 7.54 8.60 3.42 6.53 7.05 8.10
bypass)
Supply
current in 64 MHz 55.4 59.2 62.5 62.9 29.1 32.7 34.0 34.6
IDD Run mode, 48 MHz 43.1 46.7 49.0 49.9 22.8 26.1 26.8 27.8
executing Internal
from RAM 32 MHz 30.5 33.2 35.0 35.5 15.8 18.8 19.5 20.9
clock (HSI)
24 MHz 23.8 27.8 27.9 29.2 12.6 15.6 16.3 17.5
8 MHz 9.85 13.1 14.1 14.6 6.20 9.37 10.3 10.7
(2)
72 MHz 48.8 53.5 53.6 54.0(2) 7.60 8.20(2) 8.50 9.00(2)
64 MHz 43.5 48.6 49.1 49.3 6.90 7.50 7.80 8.00
48 MHz 33.6 38.1 40.0 41.3 5.30 5.80 6.00 6.40 mA
External
clock (HSE 32 MHz 24.3 27.5 28.1 29.3 3.80 4.10 4.40 4.70
Supply bypass)
current in 24 MHz 18.6 21.9 22.4 22.6 2.90 3.30 3.40 3.90
Sleep 8 MHz 8.24 11.27 11.79 12.70 1.36 1.74 1.85 2.00
IDD mode,
executing 1 MHz 3.64 6.72 7.36 8.30 0.79 1.17 1.26 1.35
from Flash 64 MHz 39.7 43.9 45.5 45.8 6.70 7.30 7.40 7.70
or RAM
48 MHz 30.4 33.9 35.3 36.5 5.10 5.60 5.70 6.10
Internal
32 MHz 21.9 25.8 26.2 26.7 3.60 4.10 4.20 4.50
clock (HSI)
24 MHz 17.0 20.2 21.5 21.7 2.98 3.41 3.46 3.57
8 MHz 7.81 11.0 11.7 12.4 1.41 1.74 1.81 1.87
1. Data based on characterization results, not tested in production unless otherwise specified.
2. Data based on characterization results and tested in production with code executing from RAM.

Table 26. Typical and maximum current consumption from the VDDA supply
VDDA = 2.4 V VDDA = 3.6 V
Conditions
Symbol Parameter (1) fHCLK Max @ TA(2) Max @ TA(2) Unit
Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

72 MHz 220 243 255 260 241 264 281 287

Supply
current in 64 MHz 194 215 226 231 212 233 248 254
Run mode, 48 MHz 145 164 172 176 158 176 187 192
HSE
IDDA code µA
bypass 32 MHz 100 116 121 124 108 123 130 134
executing
from Flash 24 MHz 78 92 96 98 85 97 102 105
or RAM
8 MHz 1.9 3.1 3.6 4.4 2.5 3.7 4.4 5.5

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Table 26. Typical and maximum current consumption from the VDDA supply (continued)
VDDA = 2.4 V VDDA = 3.6 V
Conditions
Symbol Parameter (1) fHCLK Max @ TA(2) Max @ TA(2) Unit
Typ Typ
25 °C 85 °C 105 °C 25 °C 85 °C 105 °C

HSE
1 MHz 1.9 3.1 3.6 4.4 2.5 3.7 4.4 5.5
Supply bypass
current in 64 MHz 266 290 301 306 295 320 335 341
Run mode,
IDDA code 48 MHz 216 237 247 251 240 262 274 279 µA
executing HSI clock 32 MHz 170 188 196 199 190 208 217 221
from Flash
or RAM 24 MHz 148 164 170 172 166 182 189 192
8 MHz 70 78 81 82 84 92 95 97
1. Current consumption from the VDDA supply is independent of whether the peripherals are on or off. Furthermore when the
PLL is off, IDDA is independent from the frequency.
2. Data based on characterization results, not tested in production.

Table 27. Typical and maximum VDD consumption in Stop and Standby modes
Typ @VDD (VDD=VDDA) Max
Symbol Parameter Conditions Unit
TA = TA = TA =
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
25 °C 85 °C 105 °C

Regulator in run mode,

Supply 18.4 18.7 18.8 18.9 19.0 19.1 47 435 940
all oscillators OFF
current in
Stop mode Regulator in low-power 6.80 6.94 7.11 7.18 7.26 7.39 33 408 898
mode, all oscillators OFF
IDD µA
Supply LSI ON and IWDG ON 0.72 0.87 0.99 1.10 1.23 1.37 - - -
current in
Standby LSI OFF and IWDG OFF 0.57 0.68 0.76 0.85 0.94 1.03 6.2 8.6 13.5
mode

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Table 28. Typical and maximum VDDA consumption in Stop and Standby modes
Typ @VDD (VDD = VDDA) Max(1)
Symbol Parameter Conditions Unit
TA = TA = TA =
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
25 °C 85 °C 105 °C

Supply Regulator in run/low-

VDDA supervisor OFF VDDA supervisor ON
current in power mode, all 1.72 1.85 1.97 2.10 2.25 2.41 10.7 11 12
Stop mode oscillators OFF
Supply LSI ON and IWDG ON 2.08 2.26 2.43 2.61 2.82 3.05 - - -
current in
Standby LSI OFF and IWDG
1.60 1.73 1.85 1.98 2.13 2.29 3.6 4 6
mode OFF
IDDA µA
Supply Regulator in run/low-
current in power mode, all 1.00 1.02 1.05 1.10 1.16 1.24 - - -
Stop mode oscillators OFF
Supply LSI ON and IWDG ON 1.36 1.43 1.51 1.61 1.74 1.88 - - -
current in
Standby LSI OFF and IWDG
0.88 0.90 0.93 0.98 1.05 1.12 - - -
mode OFF

1. Data based on characterization results, not tested in production.

Table 29. Typical and maximum current consumption from VBAT supply
Max
Typ @VBAT
@VBAT = 3.6 V(2)
Para Conditions
Symbol (1) Unit
meter
T = TA = TA =
1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V A
25°C 85°C 105°C

LSE & RTC

ON; “Xtal
mode” lower
driving 0.48 0.50 0.52 0.58 0.65 0.72 0.80 0.90 1.1 1.5 2.0
capability;
LSEDRV[1:
Backup 0] = '00'
domain
IDD_VBAT µA
supply LSE & RTC
current ON; “Xtal
mode”
higher
0.83 0.86 0.90 0.98 1.03 1.10 1.20 1.30 1.5 2.2 2.9
driving
capability;
LSEDRV[1:
0] = '11'
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Data based on characterization results, not tested in production.

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Figure 14. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] 00’)




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-36

Typical current consumption

The MCU is placed under the following conditions:
• VDD = VDDA = 3.3 V
• All I/O pins available on each package are in analog input configuration
• The Flash access time is adjusted to fHCLK frequency (0 wait states from 0 to 24 MHz,
1 wait state from 24 to 48 MHz and 2 wait states from 48 MHz to 72 MHz), and Flash
prefetch is ON
• When the peripherals are enabled, fAPB1 = fAHB/2, fAPB2 = fAHB
• PLL is used for frequencies greater than 8 MHz
• AHB prescaler of 2, 4, 8,16 and 64 is used for the frequencies 4 MHz, 2 MHz, 1 MHz,
500 kHz and 125 kHz respectively.

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Table 30. Typical current consumption in Run mode, code with data processing running
from Flash
Typ
Symbol Parameter Conditions fHCLK Peripherals Peripherals Unit
enabled disabled
72 MHz 60.7 27.3
64 MHz 54.3 24.1
48 MHz 42.1 19.4
32 MHz 28.7 13.9
24 MHz 22.2 11.0
Supply current in 16 MHz 15.4 7.9
IDD Run mode from mA
VDD supply 8 MHz 8.3 4.51
4 MHz 5.14 3.02
2 MHz 3.37 2.21
1 MHz 2.49 1.80
500 kHz 2.04 1.57
Running from HSE
crystal clock 8 MHz, 125 kHz 1.71 0.84
code executing from 72 MHz 239.7
Flash
64 MHz 210.5
48 MHz 155.6
32 MHz 105.5
24 MHz 81.9
Supply current in 16 MHz 58.6
IDDA(1) (2) Run mode from µA
VDDA supply 8 MHz 1.16
4 MHz 1.16
2 MHz 1.16
1 MHz 1.16
500 kHz 1.16
125 kHz 1.16
1. VDDA supervisor is OFF.
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp is not included. Refer to the tables of characteristics in the subsequent sections.

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Table 31. Typical current consumption in Sleep mode, code running from Flash or RAM
Typ
Symbol Parameter Conditions fHCLK Peripherals Peripherals Unit
enabled disabled
72 MHz 43.0 7.4
64 MHz 38.3 6.8
48 MHz 29.0 5.29
32 MHz 19.7 3.91
24 MHz 15.2 3.19
Supply current in 16 MHz 10.8 2.46
IDD Sleep mode from mA
VDD supply 8 MHz 5.85 1.55
4 MHz 3.80 1.45
2 MHz 2.67 1.32
1 MHz 2.12 1.22
500 kHz 1.83 1.19
Running from HSE
crystal clock 8 MHz, 125 kHz 1.60 0.83
code executing from 72 MHz 239.7
Flash or RAM
64 MHz 210.5
48 MHz 155.6
32 MHz 105.5
24 MHz 81.9
Supply current in 16 MHz 58.6
IDDA(1) (2) Sleep mode from µA
VDDA supply 8 MHz 1.16
4 MHz 1.16
2 MHz 1.16
1 MHz 1.16
500 kHz 1.16
125 kHz 1.16
1. VDDA supervisor is OFF.
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp is not included. Refer to the tables of characteristics in the subsequent sections.

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I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 66: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (seeTable 33: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:

I SW = V DD × f SW × C

where:
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT+CS
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

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Table 32. Switching output I/O current consumption

I/O toggling
Symbol Parameter Conditions(1) Typ Unit
frequency (fSW)

2 MHz 0.90
4 MHz 0.93
VDD = 3.3 V 8 MHz 1.16
Cext = 0 pF
C = CINT + CEXT+ CS 18 MHz 1.60
36 MHz 2.51
48 MHz 2.97
2 MHz 0.93
4 MHz 1.06
VDD = 3.3 V 8 MHz 1.47
Cext = 10 pF
C = CINT + CEXT +CS 18 MHz 2.26
36 MHz 3.39
48 MHz 5.99
2 MHz 1.03
I/O current
ISW 4 MHz 1.30 mA
consumption VDD = 3.3 V
Cext = 22 pF 8 MHz 1.79
C = CINT + CEXT +CS
18 MHz 3.01
36 MHz 5.99
2 MHz 1.10
4 MHz 1.31
VDD = 3.3 V
Cext = 33 pF 8 MHz 2.06
C = CINT + CEXT+ CS
18 MHz 3.47
36 MHz 8.35
2 MHz 1.20
4 MHz 1.54
VDD = 3.3 V
Cext = 47 pF 8 MHz 2.46
C = CINT + CEXT+ CS
18 MHz 4.51
36 MHz 9.98
1. CS = 5 pF (estimated value).

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On-chip peripheral current consumption

The MCU is placed under the following conditions:
• all I/O pins are in analog input configuration
• all peripherals are disabled unless otherwise mentioned
• the given value is calculated by measuring the current consumption
– with all peripherals clocked off
– with only one peripheral clocked on
• ambient operating temperature at 25°C and VDD = VDDA = 3.3 V.

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Table 33. Peripheral current consumption

Typical consumption(1)
Peripheral Unit
IDD

BusMatrix (2) 8.3

DMA1 7.0
DMA2 5.4
FSMC 35.0
CRC 1.5
GPIOH 1.3
GPIOA 5.4
GPIOB 5.3
GPIOC 5.4
GPIOD 5.0
GPIOE 5.4
GPIOF 5.2
GPIOG 5.0
TSC 5.2 µA/MHz
ADC1&2 15.4
ADC3&4 16.2
APB2-Bridge (3)
3.1
SYSCFG 4.0
TIM1 26.0
SPI1 6.2
TIM8 26.4
USART1 17.7
SPI4 6.2
TIM15 11.9
TIM16 8.0
TIM17 8.5
TIM20 25.3

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Table 33. Peripheral current consumption (continued)

Typical consumption(1)
Peripheral Unit
IDD

APB1-Bridge (3) 6.7

TIM2 39.2
TIM3 30.8
TIM4 31.3
TIM6 4.3
TIM7 4.3
WWDG 1.3
SPI2 33.6
SPI3 33.9
USART2 39.3
µA/MHz
USART3 39.3
UART4 29.8
UART5 27.0
I2C1 6.7
I2C2 6.4
USB 14.7
CAN 25.6
PWR 3.7
DAC 22.1
I2C3 6.8
1. The power consumption of the analog part (IDDA) of peripherals such as ADC, DAC, Comparators, OpAmp
is not included. Refer to the tables of characteristics in the subsequent sections.
2. BusMatrix is automatically active when at least one master is ON (CPU, DMA1 or DMA2).
3. The APBx bridge is automatically active when at least one peripheral is ON on the same bus.

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6.3.6 Wakeup time from low-power mode

The wakeup times given in Table 34 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
• For Stop or Sleep mode: the wakeup event is WFE.
• WKUP1 (PA0) pin is used to wake up from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 19.

Table 34. Low-power mode wakeup timings

Typ @VDD, VDD = VDDA
Symbol Parameter Conditions Max Unit
2.0 V 2.4 V 2.7 V 3V 3.3 V 3.6 V

Regulator in
5.4 5.2 5.2 5.1 5.0 4.9 5.6
run mode
Wakeup from
tWUSTOP Regulator in
Stop mode
low power 12.0 10.1 9.2 8.6 8.1 7.8 12.9
µs
mode
Wakeup from
LSI and
tWUSTANDBY(1) Standby 91.0 77.1 71.7 68.0 65.1 63.1 139
IWDG OFF
mode
CPU
Wakeup from
tWUSLEEP - 6 - clock
Sleep mode
cycles
1. Data based on characterization results, not tested in production.

Table 35. Wakeup time using USART

Symbol Parameter Conditions Typ Max Unit

Wakeup time needed to Stop mode with

calculate the maximum main regulator in - 13.125
USART baudrate allowing low power mode
tWUUSART µs
to wakeup up from stop Stop mode with
mode when USART clock main regulator in - 3.125
source is HSI run mode

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6.3.7 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in Section 6.3.15. However, the
recommended clock input waveform is shown in Figure 15.

Table 36. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User external clock source

fHSE_ext 1 8 32 MHz
frequency(1)
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD
V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
-
tw(HSEH)
OSC_IN high or low time(1) 15 - -
tw(HSEL)
ns
tr(HSE)
OSC_IN rise or fall time(1) - - 20
tf(HSE)
1. Guaranteed by design, not tested in production.

Figure 15. High-speed external clock source AC timing diagram

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Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in Section 6.3.15. However, the
recommended clock input waveform is shown in Figure 16.

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Table 37. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User External clock source

fLSE_ext - 32.768 1000 kHz
frequency(1)
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage
V
OSC32_IN input pin low level
VLSEL - VSS - 0.3VDD
voltage
tw(LSEH)
OSC32_IN high or low time(1) 450 - -
tw(LSEL)
ns
tr(LSE)
OSC32_IN rise or fall time(1) - - 50
tf(LSE)
1. Guaranteed by design, not tested in production.

Figure 16. Low-speed external clock source AC timing diagram

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069

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High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 38. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins to minimize output distortion and startup stabilization time. Refer to the
crystal resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

Table 38. HSE oscillator characteristics

Symbol Parameter Conditions(1) Min(2) Typ Max(2) Unit

fOSC_IN Oscillator frequency - 4 8 32 MHz

RF Feedback resistor - - 200 - kΩ
(3)
During startup - - 8.5
VDD= 3.3 V, Rm= 30Ω,
- 0.4 -
CL=10 pF@8 MHz
VDD= 3.3 V, Rm= 45Ω,
- 0.5 -
CL=10 pF@8 MHz
IDD HSE current consumption VDD= 3.3 V, Rm= 30Ω, mA
- 0.8 -
CL=5 pF@32 MHz
VDD= 3.3 V, Rm= 30Ω,
- 1 -
CL=10 pF@32 MHz
VDD= 3.3 V, Rm= 30Ω,
- 1.5 -
CL=20 pF@32 MHz
gm Oscillator transconductance Startup 10 - - mA/V
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by design, not tested in production.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time.
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer.

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (Typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 17). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

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Figure 17. Typical application with an 8 MHz crystal

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1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 39. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins to minimize output distortion and startup stabilization time. Refer to the
crystal resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz)

Symbol Parameter Conditions(1) Min(2) Typ Max(2) Unit
LSEDRV[1:0]=00
- 0.5 0.9
lower driving capability
LSEDRV[1:0]=01
- - 1
medium low driving capability
IDD LSE current consumption µA
LSEDRV[1:0]=10
- - 1.3
medium high driving capability
LSEDRV[1:0]=11
- - 1.6
higher driving capability
LSEDRV[1:0]=00
5 - -
lower driving capability
LSEDRV[1:0]=01
8 - -
Oscillator medium low driving capability
gm µA/V
transconductance LSEDRV[1:0]=10
15 - -
medium high driving capability
LSEDRV[1:0]=11
25 - -
higher driving capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
2. Guaranteed by design, not tested in production.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer.

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Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 18. Typical application with a 32.768 kHz crystal

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Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

6.3.8 Internal clock source characteristics

The parameters given in Table 40 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 19.

High-speed internal (HSI) RC oscillator

Table 40. HSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - - 8 - MHz

(2)
TRIM HSI user trimming step - - - 1 %
(2) (2)
DuCy(HSI) Duty cycle - 45 - 55 %
TA = -40 to 105°C -2.8(3) - 3.8(3)
TA = -10 to 85°C -1.9(3) - 2.3(3)

Accuracy of the HSI TA = 0 to 85°C -1.9(3) - 2(3)

ACCHSI %
oscillator TA = 0 to 70°C -1.3(3) - 2(3)
TA = 0 to 55°C -1(3) - 2(3)
TA = 25°C(4) -1 - 1
tSU(HSI) HSI oscillator startup time - 1(2) - 2(2) μs
HSI oscillator power
IDDA(HSI) - - 80 100(2) μA
consumption
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
4. Factory calibrated, parts not soldered.

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Figure 19. HSI oscillator accuracy characterization results for soldered parts

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Low-speed internal (LSI) RC oscillator

Table 41. LSI oscillator characteristics(1)

Symbol Parameter Min Typ Max Unit

fLSI Frequency 30 40 50 kHz

tsu(LSI)(2) LSI oscillator startup time - - 85 µs
IDD(LSI)(2) LSI oscillator power consumption - 0.75 1.2 µA
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.

6.3.9 PLL characteristics

The parameters given in Table 42 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 19.

Table 42. PLL characteristics

Value
Symbol Parameter Unit
Min Typ Max
PLL input clock(1) 1(2) - 24(2) MHz
fPLL_IN (2)
PLL input clock duty cycle 40 - 60(2) %
fPLL_OUT PLL multiplier output clock 16(2) - 72 MHz
tLOCK PLL lock time - - 200(2) µs
(2)
Jitter Cycle-to-cycle jitter - - 300 ps
1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
2. Guaranteed by design, not tested in production.

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6.3.10 Memory characteristics

Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 43. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

tprog 16-bit programming time TA = –40 to +105 °C 40 53.5 60 µs

tERASE Page (2 KB) erase time TA = –40 to +105 °C 20 - 40 ms
tME Mass erase time TA = –40 to +105 °C 20 - 40 ms
Write mode - - 10 mA
IDD Supply current
Erase mode - - 12 mA
1. Guaranteed by design, not tested in production.

Table 44. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

TA = –40 to +85 °C (6 suffix versions)

NEND Endurance 10 kcycles
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C 30
tRET (2)
Data retention 1 kcycle at TA = 105 °C 10 Years
10 kcycle(2) at TA = 55 °C 20
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.

6.3.11 FSMC characteristics

Unless otherwise specified, the parameters given in Table 45 to Table 60 for the FSMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 19 with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.15: I/O port characteristics: for more details on the input/output
characteristics.

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Asynchronous waveforms and timings

Figure 20 to Figure 23 represent asynchronous waveforms and Table 45 to Table 52
provide the corresponding timings. The results shown in these tables are obtained with the
following FSMC configuration:
• AddressSetupTime = 0x1
• AddressHoldTime = 0x1
• DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)
• BusTurnAroundDuration = 0x0
• NOR NWAIT pulse width= 1THCLK
In all the timing tables, the THCLK is the HCLK clock period.

Figure 20. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings

TW.%

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-36

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Table 45. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 2THCLK– 1 2THCLK+1

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1
tw(NOE) FMC_NOE low time 2THCLK 2THCLK+ 1.5
FMC_NOE high to FMC_NE high hold
th(NE_NOE) 0.5 -
time
tv(A_NE) FMC_NEx low to FMC_A valid - 3
th(A_NOE) Address hold time after FMC_NOE high 0 -
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 (NA) ns
th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 -
tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 6 -
tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK +7 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
th(Data_NE) Data hold time after FMC_NEx high 0 -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 2
tw(NADV) FMC_NADV low time - THCLK +1.5
1. Based on characterization, not tested in production

Table 46. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 7THCLK +0.5 7THCLK+ 1

tw(NOE) FMC_NWE low time 6THCLK -1.5 6THCLK +2

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 4THCLK +5 -
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK-3 -
invalid
1. Based on characterization, not tested in production.

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Figure 21. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings

TW.%

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&-#?./%
TV.7%?.% TW.7% T H.%?.7%

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TV!?.% TH!?.7%

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1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

Table 47. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)

Symbol Parameter Min Max Unit
tw(NE) FMC_NE low time 3THCLK-1 3THCLK+2
tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK+0.5 THCLK+1
tw(NWE) FMC_NWE low time THCLK-2 THCLK+1
FMC_NWE high to FMC_NE high hold
th(NE_NWE) THCLK-0.5 -
time
tv(A_NE) FMC_NEx low to FMC_A valid - 0
th(A_NWE) Address hold time after FMC_NWE high THCLK-1.5 - ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 1
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK-0.5 -
tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK+ 3
th(Data_NWE) Data hold time after FMC_NWE high THCLK+0.5 -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 2.5
tw(NADV) FMC_NADV low time - THCLK+2
1. Based on characterization, not tested in production.

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Table 48. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK+1 8THCLK+2

tw(NWE) FMC_NWE low time 6THCLK-1 6THCLK+2
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK-0.5 - ns

FMC_NEx hold time after FMC_NWAIT

th(NE_NWAIT) 4THCLK+2 -
invalid
1. Based on characterization, not tested in production.

Table 49. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK+2 8THCLK+2

tw(NOE) FMC_NWE low time 6THCLK-1 6THCLK+1.5

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 4THCLK+6 -

FMC_NEx hold time after FMC_NWAIT

th(NE_NWAIT) 4THCLK-4 -
invalid
1. Based on characterization, not tested in production.

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Figure 22. Asynchronous multiplexed PSRAM/NOR read timings

TW.%

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TV./%?.% T H.%?./%

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T W./%

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TV!?.% TH!?./%

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Table 50. Asynchronous multiplexed PSRAM/NOR read timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3THCLK-0.5 3THCLK+1

tv(NOE_NE) FMC_NEx low to FMC_NOE low 2THCLK 2THCLK+1
tw(NOE) FMC_NOE low time THCLK-2 THCLK+2
FMC_NOE high to FMC_NE high hold
th(NE_NOE) 0 -
time
tv(A_NE) FMC_NEx low to FMC_A valid - 1.5
ns
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 2
tw(NADV) FMC_NADV low time THCLK-2 THCLK+2
FMC_AD(address) valid hold time after
th(AD_NADV) 0 -
FMC_NADV high
th(A_NOE) Address hold time after FMC_NOE high THCLK-0.5 -
th(BL_NOE) FMC_BL time after FMC_NOE high 0 -

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Table 50. Asynchronous multiplexed PSRAM/NOR read timings(1) (continued)

Symbol Parameter Min Max Unit

tv(BL_NE) FMC_NEx low to FMC_BL valid - 2

tsu(Data_NE) Data to FMC_NEx high setup time THCLK -
tsu(Data_NOE) Data to FMC_NOE high setup time THCLK+1 - ns
th(Data_NE) Data hold time after FMC_NEx high 0 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
1. Based on characterization, not tested in production.

Figure 23. Asynchronous multiplexed PSRAM/NOR write timings

TW.%

&-#? .%X

&-#?./%
TV.7%?.% TW.7% T H.%?.7%

&-#?.7%

TV!?.% TH!?.7%

&-#? !;= !DDRESS

TV",?.% TH",?.7%

&-#? .",;= .",

T V!?.% T V$ATA?.!$6 TH$ATA?.7%

&-#? !$;= !DDRESS $ATA

T V.!$6?.% TH!$?.!$6

TW.!$6

&-#?.!$6

&-#?.7!)4
TH.%?.7!)4

TSU.7!)4?.%
-36

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Table 51. Asynchronous multiplexed PSRAM/NOR write timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 4THCLK-1 4THCLK+1

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK THCLK+0.5
tw(NWE) FMC_NWE low time 2THCLK-0.5 2THCLK+1
FMC_NWE high to FMC_NE high hold
th(NE_NWE) THCLK-0.5 -
time
tv(A_NE) FMC_NEx low to FMC_A valid - 5
tv(NADV_NE) FMC_NEx low to FMC_NADV low 1 2.5
tw(NADV) FMC_NADV low time THCLK-2 THCLK+2 ns
FMC_AD(adress) valid hold time after
th(AD_NADV) THCLK-2 -
FMC_NADV high)
th(A_NWE) Address hold time after FMC_NWE high THCLK-1 -
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK-0.5 -
tv(BL_NE) FMC_NEx low to FMC_BL valid - 1
tv(Data_NADV) FMC_NADV high to Data valid - THCLK +3.5
th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 -
1. Based on characterization, not tested in production.

Table 52. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9THCLK 9THCLK+0.5

tw(NWE) FMC_NWE low time 6THCLK 6THCLK+2

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+6 -
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 5THCLK-5 -
invalid
1. Based on characterization, not tested in production.

Synchronous waveforms and timings

Figure 24 and Figure 27 present the synchronous waveforms and Table 53 to Table 56
provide the corresponding timings. The results shown in these tables are obtained with the
following FSMC configuration:
• BurstAccessMode = FMC_BurstAccessMode_Enable;
• MemoryType = FMC_MemoryType_CRAM;
• WriteBurst = FMC_WriteBurst_Enable;
• CLKDivision = 1;
• DataLatency = 2 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period (with maximum FMC_CLK =
36 MHz).

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Figure 24. Synchronous multiplexed NOR/PSRAM read timings

TW#,+ TW#,+ "53452.

&-#?#,+

$ATALATENCY
TD#,+, .%X, TD#,+( .%X(

&-#?.%X
T D#,+, .!$6, TD#,+, .!$6(

&-#?.!$6
TD#,+, !6 TD#,+( !)6

&-#?!;=

TD#,+, ./%, TD#,+( ./%(

&-#?./%
TD#,+, !$)6 TH#,+( !$6
T D#,+, !$6 TSU!$6 #,+( TSU!$6 #,+( TH#,+( !$6

&-#?!$;= !$;= $ $
TSU.7!)46 #,+( TH#,+( .7!)46
&-#?.7!)4
7!)4#&'B
7!)40/,B
TSU.7!)46 #,+( TH#,+( .7!)46
&-#?.7!)4
7!)4#&'B
7!)40/,B TSU.7!)46 #,+( TH#,+( .7!)46

-36

Table 53. Synchronous multiplexed NOR/PSRAM read timings(1)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 5
FMC_CLK high to FMC_NEx high (x=
td(CLKH_NExH) THCLK+1 -
0…2)
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 7
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 2.5 -
FMC_CLK low to FMC_Ax valid ns
td(CLKL-AV) - 3
(x=16…25)
FMC_CLK high to FMC_Ax invalid
td(CLKH-AIV) 0 -
(x=16…25)
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 6
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK+1 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 2

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Table 53. Synchronous multiplexed NOR/PSRAM read timings(1) (continued)

Symbol Parameter Min Max Unit

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

FMC_A/D[15:0] valid data before
tsu(ADV-CLKH) 4 -
FMC_CLK high
FMC_A/D[15:0] valid data after ns
th(CLKH-ADV) 6 -
FMC_CLK high
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 3 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -
1. Based on characterization, not tested in production.

Figure 25. Synchronous multiplexed PSRAM write timings

TW#,+ TW#,+ "53452.

&-#?#,+

$ATALATENCY
TD#,+, .%X, TD#,+( .%X(

&-#?.%X
TD#,+, .!$6, TD#,+, .!$6(

&-#?.!$6
TD#,+, !6 TD#,+( !)6

&-#?!;=

TD#,+, .7%, TD#,+( .7%(

&-#?.7%
TD#,+, !$)6 TD#,+, $ATA
TD#,+, !$6 TD#,+, $ATA

&-#?!$;= !$;= $ $

&-#?.7!)4
7!)4#&'B
7!)40/,B TSU.7!)46 #,+( TH#,+( .7!)46

TD#,+( .",(

&-#?.",

-36

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Table 54. Synchronous multiplexed PSRAM write timings(1) (2)

Symbol Parameter Min Max Unit

FMC_CLK period, VDD range= 2.7 to 3.6

tw(CLK) 2THCLK-1 -
V
td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 5.5
FMC_CLK high to FMC_NEx high (x=
td(CLKH-NExH) THCLK+1 -
0…2)
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 7
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 2 -
FMC_CLK low to FMC_Ax valid
td(CLKL-AV) - 0
(x=16…25)
FMC_CLK high to FMC_Ax invalid
td(CLKH-AIV) 0 -
(x=16…25)
ns
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 5.5
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK+1 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 7.5
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
FMC_A/D[15:0] valid data after
td(CLKL-DATA) - 8
FMC_CLK low
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 6
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK+1 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 3 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 5 -
1. Based on characterization, not tested in production.
2. CL = 30 pF.

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Figure 26. Synchronous non-multiplexed NOR/PSRAM read timings

TW#,+ TW#,+

&-#?#,+
TD#,+, .%X, TD#,+( .%X(
$ATALATENCY
&-#?.%X
TD#,+, .!$6, TD#,+, .!$6(

&-#?.!$6
TD#,+, !6 TD#,+( !)6

&-#?!;=

TD#,+, ./%, TD#,+( ./%(

&-#?./%
TSU$6 #,+( TH#,+( $6
TSU$6 #,+( TH#,+( $6

&-#?$;= $ $

TSU.7!)46 #,+( TH#,+( .7!)46

&-#?.7!)4
7!)4#&'B
7!)40/,B
TSU.7!)46 #,+( T H#,+( .7!)46
&-#?.7!)4
7!)4#&'B
7!)40/,B
TSU.7!)46 #,+( TH#,+( .7!)46

-36

Table 55. Synchronous non-multiplexed NOR/PSRAM read timings(1)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK-1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 5
FMC_CLK high to FMC_NEx high
td(CLKH-NExH) THCLK+1 -
(x= 0…2)
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 7
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 2.5 -
FMC_CLK low to FMC_Ax valid ns
td(CLKL-AV) - 7
(x=16…25)
FMC_CLK high to FMC_Ax invalid
td(CLKH-AIV) THCLK -
(x=16…25)
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 6
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK+1 -
FMC_D[15:0] valid data before
tsu(DV-CLKH) 3.5 -
FMC_CLK high

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Table 55. Synchronous non-multiplexed NOR/PSRAM read timings(1) (continued)

Symbol Parameter Min Max Unit

FMC_D[15:0] valid data after FMC_CLK

th(CLKH-DV) 5 -
high
ns
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 2 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -
1. Based on characterization, not tested in production.

Figure 27. Synchronous non-multiplexed PSRAM write timings

TW#,+ TW#,+

&-#?#,+

TD#,+, .%X, TD#,+( .%X(

$ATALATENCY
&-#?.%X

TD#,+, .!$6, TD#,+, .!$6(

&-#?.!$6

TD#,+, !6 TD#,+( !)6

&-#?!;=

TD#,+, .7%, TD#,+( .7%(

&-#?.7%

TD#,+, $ATA TD#,+, $ATA

&-#?$;= $ $

&-#?.7!)4
7!)4#&'B7!)40/,B TSU.7!)46 #,+( TD#,+( .",(
TH#,+( .7!)46
&-#?.",

-36

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Table 56. Synchronous non-multiplexed PSRAM write timings(1)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK-1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 6
FMC_CLK high to FMC_NEx high
td(CLKH-NExH) THCLK+1.5 -
(x= 0…2)
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 7.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -
FMC_CLK low to FMC_Ax valid
td(CLKL-AV) - 6.5
(x=16…25)
FMC_CLK high to FMC_Ax invalid
td(CLKH-AIV) 0 - ns
(x=16…25)
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 0
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK+2 -
FMC_D[15:0] valid data after FMC_CLK
td(CLKL-Data) - 7.5
low
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 7
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK+0.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 2 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -
1. Based on characterization, not tested in production.

PC Card/CompactFlash controller waveforms and timings

Figure 28 to Figure 33 present the PC Card/Compact Flash controller waveforms, and
Table 57 to Table 58 provide the corresponding timings. The results shown in this table are
obtained with the following FSMC configuration:
• COM.FMC_SetupTime = 0x04;
• COM.FMC_WaitSetupTime = 0x07;
• COM.FMC_HoldSetupTime = 0x04;
• COM.FMC_HiZSetupTime = 0x05;
• ATT.FMC_SetupTime = 0x04;
• ATT.FMC_WaitSetupTime = 0x07;
• ATT.FMC_HoldSetupTime = 0x04;
• ATT.FMC_HiZSetupTime = 0x05;
• IO.FMC_SetupTime = 0x04;
• IO.FMC_WaitSetupTime = 0x07;
• IO.FMC_HoldSetupTime = 0x04;
• IO.FMC_HiZSetupTime = 0x05;
• TCLRSetupTime = 0;
• TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.

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Table 57. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space(1)
Symbol Parameter Min Max Unit

tv(NCEx-A) FMC_Ncex low to FMC_Ay valid - 0

th(NCEx_AI) FMC_NCEx high to FMC_Ax invalid 2.5 -
td(NREG-NCEx) FMC_NCEx low to FMC_NREG valid - 2
th(NCEx-NREG) FMC_NCEx high to FMC_NREG invalid 0 -
td(NCEx-NWE) FMC_NCEx low to FMC_NWE low - 5THCLK+2
tw(NWE) FMC_NWE low width 8THCLK 8THCLK+0.5
td(NWE_NCEx) FMC_NWE high to FMC_NCEx high 5THCLK-1 -
tv (NWE-D) FMC_NWE low to FMC_D[15:0] valid - 5
ns
th (NWE-D) FMC_NWE high to FMC_D[15:0] invalid 4THCLK-1 -
FMC_D[15:0] valid before FMC_NWE
td (D-NWE) 13THCLK-3 -
high
td(NCEx-NOE) FMC_NCEx low to FMC_NOE low - 5THCLK+2
tw(NOE) FMC_NOE low width 8THCLK-1 8THCLK+2
td(NOE_NCEx) FMC_NOE high to FMC_NCEx high 5THCLK-1 -
FMC_D[15:0] valid data before
tsu (D-NOE) THCLK+2 -
FMC_NOE high
th(NOE-D) FMC_N0E high to FMC_D[15:0] invalid 0 -
1. Based on characterization, not tested in production.

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STM32F303xD STM32F303xE Electrical characteristics

Figure 28. PC Card/CompactFlash controller waveforms for common memory

read access
&-#?.#%?
&-#?.#%?

TV.#%X ! TH.#%X !)

&-#?!;=

TH.#%X .2%'
TD.2%' .#%X
TH.#%X .)/2$
TD.)/2$ .#%X
TH.#%X .)/72
&-#?.2%'
&-#?.)/72
&-#?.)/2$

&-#?.7%

TD.#%? ./% TW./%

&-#?./%

TSU$ ./% TH./% $

&-#?$;=

-36

1. FMC_NCE4_2 remains high (inactive during 8-bit access.

Figure 29. PC Card/CompactFlash controller waveforms for common memory

write access

&-#?.#%?

&-#?.#%? (IGH

TV.#%? ! TH.#%? !)
&-#?!;=

TH.#%? .2%'
TD.2%' .#%?
TH.#%? .)/2$
TD.)/2$ .#%?
TH.#%? .)/72
&-#?.2%'
&-#?.)/72
&-#?.)/2$
TD.#%? .7% TW.7% TD.7% .#%?
&-#?.7%

&-#?./%
-%-X():
TD$ .7%
TV.7% $ TH.7% $

&-#?$;=

-36

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Figure 30. PC Card/CompactFlash controller waveforms for attribute memory

read access

&-#?.#%?

TV.#%? ! TH.#%? !)
&-#?.#%? (IGH

&-#?!;=

&-#?.)/72
&-#?.)/2$
TD.2%' .#%? TH.#%? .2%'

&-#?.2%'

&-#?.7%

TD.#%? ./% TW./% TD./% .#%?

&-#?./%

TSU$ ./% TH./% $

&-#?$;=

-36

1. Only data bits 0...7 are read (bits 8...15 are disregarded).

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STM32F303xD STM32F303xE Electrical characteristics

Figure 31. PC Card/CompactFlash controller waveforms for attribute memory

write access

&-#?.#%?

&-#?.#%? (IGH

TV.#%? ! TH.#%? !)

&-#?!;=

&-#?.)/72
&-#?.)/2$
TD.2%' .#%? TH.#%? .2%'

&-#?.2%'
TD.#%? .7% TW.7%

&-#?.7%
TD.7% .#%?

&-#?./%

TV.7% $

&-#?$;=

-36

1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z).

Table 58. Switching characteristics for PC Card/CF read and write cycles in I/O
space(1)
Symbol Parameter Min Max Unit

tw(NIOWR) FMC_NIOWR low width 8THCLK-0.5 -

tv(NIOWR-D) FMC_NIOWR low to FMC_D[15:0] valid - 5.5
FMC_NIOWR high to FMC_D[15:0]
th(NIOWR-D) 4THCLK-0.5 -
invalid
td(NCE4_1-NIOWR) FMC_NCE4_1 low to FMC_NIOWR valid - 5THCLK+1
th(NCEx-NIOWR) FMC_NCEx high to FMC_NIOWR invalid 4THCLK+0.5 -
td(NIORD-NCEx) FMC_NCEx low to FMC_NIORD valid - 5THCLK ns

th(NCEx-NIORD) FMC_NCEx high to FMC_NIORD) valid 6THCLK+2 -

tw(NIORD) FMC_NIORD low width 8THCLK-1 8THCLK+1
FMC_D[15:0] valid before FMC_NIORD
tsu(D-NIORD) THCLK+2 -
high
FMC_D[15:0] valid after FMC_NIORD
td(NIORD-D) 0 -
high
1. Based on characterization, not tested in production.

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Figure 32. PC Card/CompactFlash controller waveforms for I/O space read access

&-#?.#%?
&-#?.#%?
TV.#%X ! TH.#%? !)

&-#?!;=

&-#?.2%'
&-#?.7%
&-#?./%

&-#?.)/72
TD.)/2$ .#%? TW.)/2$

&-#?.)/2$

TSU$ .)/2$ TD.)/2$ $

&-#?$;=

-36

Figure 33. PC Card/CompactFlash controller waveforms for I/O space write access

&-#?.#%?
&-#?.#%?
TV.#%X ! TH.#%? !)

&-#?!;=

&-#?.2%'
&-#?.7%
&-#?./%

&-#?.)/2$
T D.#%? .)/72 TW.)/72

&-#?.)/72
!44X():
TH.)/72 $
TV.)/72 $

&-#?$;=

-36

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NAND controller waveforms and timings

Figure 34 and Figure 35 present the NAND controller synchronous waveforms, and
Table 59 and Table 60 provide the corresponding timings. The results shown in this table
are obtained with the following FSMC configuration:
• COM.FMC_SetupTime = 0x01;
• COM.FMC_WaitSetupTime = 0x03;
• COM.FMC_HoldSetupTime = 0x02;
• COM.FMC_HiZSetupTime = 0x03;
• ATT.FMC_SetupTime = 0x01;
• ATT.FMC_WaitSetupTime = 0x03;
• ATT.FMC_HoldSetupTime = 0x02;
• ATT.FMC_HiZSetupTime = 0x03;
• Bank = FMC_Bank_NAND;
• MemoryDataWidth = FMC_MemoryDataWidth_16b;
• ECC = FMC_ECC_Enable;
• ECCPageSize = FMC_ECCPageSize_512Bytes;
• TCLRSetupTime = 0;
• TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.

Figure 34. NAND controller read timings

&-#?.#%X

!,%&-#?!
#,%&-#?!

&-#?.7%

TD!,% ./% TH./% !,%

&-#?./%.2%

TSU$ ./% TH./% $

&-#?$;=

-36

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Table 59. Switching characteristics for NAND Flash read cycles(1) (2)
Symbol Parameter Min Max Unit

tw(NOE) FMC_NOE low width 6THCLK 6THCLK + 2

FMC_D[15-0] valid data before
tsu(D-NOE) THCLK+5 -
FMC_NOE high
FMC_D[15-0] valid data after FMC_NOE ns
th(NOE-D) 0 -
high
td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 6THCLK -0.5
th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 6THCLK-1 -
1. Based on characterization, not tested in production.
2. CL = 30 pF

Figure 35. NAND controller write timings

&-#?.#%X

!,%&-#?!
#,%&-#?!
TD!,% .7% TH.7% !,%

&-#?.7%

&-#?./%.2%
TV.7% $ TH.7% $

&-#?$;=

-36

Table 60. Switching characteristics for NAND Flash write cycles(1)

Symbol Parameter Min Max Unit

tw(NWE) FMC_NWE low width 4THCLK-0.5 4THCLK + 1.5

tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid - 3.5
th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK -1.5 -
FMC_D[15-0] valid before FMC_NWE ns
td(D-NWE) 5THCLK – 3 -
high
td(ALE_NWE) FMC_ALE valid before FMC_NWE low - 4THCLK+2
th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 2THCLK-1 -
1. Based on characterization, not tested in production.

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6.3.12 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through I/O ports),
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 61. They are based on the EMS levels and classes
defined in application note AN1709.

Table 61. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, LQFP144, TA = +25°C,

Voltage limits to be applied on any I/O pin to
VFESD fHCLK = 72 MHz 2B
induce a functional disturbance
conforms to IEC 61000-4-2
Fast transient voltage burst limits to be VDD = 3.3 V, LQFP144, TA = +25°C,
VEFTB applied through 100 pF on VDD and VSS fHCLK = 72 MHz 4A
pins to induce a functional disturbance conforms to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)

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Pre qualification trials

Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 62. EMI characteristics

Max vs. [fHSE/fHCLK]
Monitored
Symbol Parameter Conditions Unit
frequency band
8/72 MHz

0.1 to 30 MHz 7
VDD = 3.6 V, TA = 25 °C,
LQFP144 package 30 to 130 MHz 15 dBµV
SEMI Peak level
compliant with IEC 130 MHz to 1GHz 31
61967-2
SAE EMI Level 4 -

6.3.13 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 63. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge TA = +25 °C, conforming

VESD(HBM) 2 2000
voltage (human body model) to ANSI/JEDEC JS-001
Electrostatic discharge V
TA = +25 °C, conforming
VESD(CDM) voltage (charge device C3 250
to ANSI/ESD STM5.3.1
model)
1. Data based on characterization results, not tested in production.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 64. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II Level A

6.3.14 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, to give an indication of the robustness of the microcontroller in cases
when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 µA/+0 µA range), or other functional failure (for example reset occurrence or oscillator
frequency deviation).
The test results are given in Table 65.

Table 65. I/O current injection susceptibility

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on BOOT0 -0 NA

Injected current on PF3, PC1, PC2, PA1, PA2, PA3,
PA4, PA5, PA6, PA7, PB0, PB1, PE8, PE9, PE10, PE11,
PE12, PE13, PE14, PE15, PB13, PB14, PB15, PD8,
-5 +5
PD9, PD10, PD11, PD12, PD13, PD14 pins with
IINJ induced leakage current on adjacent pins less than - mA
50 µA or more than +400 µA
Injected current on PF2, PF4, PC0, PC1, PC2, PC3,
PA0, PA1, PA2, PA3, PA4, PA5, PA6, PA7, PC4, PC5,
-5 +5
PB2, PB11 with induced leakage current on other pins
from this group less than -50 µA or more than +400 µA

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Table 65. I/O current injection susceptibility (continued)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on PB0, PB1, PE7, PE8, PE9, PE10,

PE11, PE12, PE13, PE14, PE15, PB12, PB13, PB14,
P15, PD8, PD9, PD10, PD11, PD12, PD13, PD14 with -5 +5
induced leakage current on other pins from this group
IINJ mA
less than -50 µA or more than +400 µA
Injected current on any other FT and FTf pins -5 NA
Injected current on any other pins -5 +5

Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.

6.3.15 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 66 are derived from tests
performed under the conditions summarized in Table 19. All I/Os are CMOS and TTL
compliant.

Table 66. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

TC and TTa I/O - - 0.3 VDD+0.07 (1)

Low level input FT and FTf I/O - - 0.475 VDD-0.2 (1)

VIL V
voltage BOOT0 - - 0.3 VDD–0.3 (1)
All I/Os except BOOT0 - - 0.3 VDD (2)
TC and TTa I/O 0.445 VDD+0.398 (1) - -
(1)
FT and FTf I/O 0.5 VDD+0.2 - -
High level input (1)
BOOT0 0.2 VDD+0.95 - -
VIH V
voltage (2)
All I/Os except BOOT0 0.7 VDD - -
TC and TTa I/O - 200 (1) -
Schmitt trigger (1)
Vhys FT and FTf I/O - 100 - mV
hysteresis
BOOT0 - 300 (1)
-

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Table 66. I/O static characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

TC, FT and FTf I/O

TTa I/O in digital mode - - ±0.1
VSS ≤VIN ≤VDD
TTa I/O in digital mode
- - 1
VDD ≤VIN ≤VDDA
Input leakage
Ilkg TTa I/O in analog mode µA
current (3) - - ±0.2
VSS ≤VIN ≤VDDA
FT and FTf I/O(4)
- - 10
VDD ≤VIN ≤5 V
Weak pull-up
RPU VIN = VSS 25 40 55 kΩ
equivalent resistor(5)
Weak pull-down
RPD VIN = VDD 25 40 55 kΩ
equivalent resistor(5)
CIO I/O pin capacitance - - 5 - pF
1. Data based on design simulation.
2. Tested in production.
3. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 65: I/O
current injection susceptibility.
4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).

All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 36 and Figure 37 for standard I/Os.

Figure 36. TC and TTa I/O input characteristics - CMOS port

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Figure 37. TC and TTa I/O input characteristics - TTL port

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Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or
source up to +/- 20 mA (with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 17).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
ΣIVSS (see Table 17).

Output voltage levels

Unless otherwise specified, the parameters given in Table 67 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 19. All I/Os (FT, TTa and TC unless otherwise specified) are CMOS and TTL
compliant.

Table 67. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1) Output low level voltage for an I/O pin CMOS port(2) - 0.4
IIO = +48 mA
VOH(3) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V VDD–0.4 -

VOL (1) Output low level voltage for an I/O pin TTL port(2) - 0.4
IIO = +8 mA
VOH (3) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V 2.4 -

VOL(1)(4) Output low level voltage for an I/O pin IIO = +20 mA - 1.3 V
VOH(3)(4) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V VDD–1.3 -
VOL(1)(4) Output low level voltage for an I/O pin IIO = +6 mA - 0.4
VOH(3)(4) Output high level voltage for an I/O pin 2 V < VDD < 2.7 V VDD–0.4 -
Output low level voltage for an FTf I/O pin in IIO = +20 mA
VOLFM+(4)(4) - 0.4
FM+ mode 2.7 V < VDD < 3.6 V
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 17 and the sum of
IIO (I/O ports and control pins) must not exceed ΣIIO(PIN).
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in Table 17 and the sum
of IIO (I/O ports and control pins) must not exceed ΣIIO(PIN).
4. Data based on design simulation.

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Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 40 and
Table 68, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 19.

Table 68. I/O AC characteristics(1)

OSPEEDRy [1:0]
Symbol Parameter Conditions Min Max Unit
value(1)

fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V - 2(3) MHz

Output high to low level
tf(IO)out - 125(3)
x0 fall time
CL = 50 pF, VDD = 2 V to 3.6 V ns
Output low to high level
tr(IO)out - 125(3)
rise time
fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V - 10(3) MHz
Output high to low level
tf(IO)out - 25(3)
01 fall time
CL = 50 pF, VDD = 2 V to 3.6 V ns
Output low to high level
tr(IO)out - 25(3)
rise time
CL = 30 pF, VDD = 2.7 V to 3.6 V - 50(3)
fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2.7 V to 3.6 V - 30(3) MHz
CL = 50 pF, VDD = 2 V to 2.7 V - 20(3)
CL = 30 pF, VDD = 2.7 V to 3.6 V - 5(3)
Output high to low level
11 tf(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 8(3)
fall time
CL = 50 pF, VDD = 2 V to 2.7 V - 12(3)
ns
CL = 30 pF, VDD = 2.7 V to 3.6 V - 5(3)
Output low to high level
tr(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 8(3)
rise time
CL = 50 pF, VDD = 2 V to 2.7 V - 12(3)
fmax(IO)out Maximum frequency(2) - 2(4) MHz
Output high to low level
FM+ tf(IO)out - 12(4)
fall time CL = 50 pF, VDD = 2 to 3.6 V
configuration(4) ns
Output low to high level (4)
tr(IO)out - 34
rise time
Pulse width of external
- tEXTIpw signals detected by the - 10(3) - ns
EXTI controller
1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the RM0316 reference manual for a description of
GPIO Port configuration register.
2. The maximum frequency is defined in Figure 40.
3. Guaranteed by design, not tested in production.
4. The I/O speed configuration is bypassed in FM+ I/O mode. Refer to the reference manual RM0316 for a description of FM+
I/O mode configuration.

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Figure 40. I/O AC characteristics definition

 

 

 

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6.3.16 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 66).
Unless otherwise specified, the parameters given in Table 69 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 19.

Table 69. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.3VDD+
VIL(NRST)(1) NRST Input low level voltage - - -
0.07(1)
V
0.445VDD+
VIH(NRST)(1) NRST Input high level voltage - - -
0.398(1)
Vhys(NRST) NRST Schmitt trigger voltage hysteresis - - 200 - mV
(2)
RPU Weak pull-up equivalent resistor VIN = VSS 25 40 55 kΩ
VF(NRST)(1) NRST Input filtered pulse - - - 100(1) ns
VNF(NRST)(1) NRST Input not filtered pulse - 500(1) - - ns
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).

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Figure 41. Recommended NRST pin protection

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1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 69. Otherwise the reset is not taken into account by the device.
3. Place the external capacitor 0.1u F on NRST as close as possible to the chip.

6.3.17 Timer characteristics

The parameters given in Table 70 are guaranteed by design.
Refer to Section 6.3.15: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 70. TIMx(1)(2) characteristics

Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time fTIMxCLK = 72 MHz 13.9 - ns
fTIMxCLK = 144 MHz 6.95 - ns

Timer external clock - 0 fTIMxCLK/2 MHz

fEXT
frequency on CH1 to CH4 fTIMxCLK = 72 MHz 0 36 MHz
TIMx (except TIM2) - 16
ResTIM Timer resolution bit
TIM2 - 32
- 1 65536 tTIMxCLK
tCOUNTER 16-bit counter clock period fTIMxCLK = 72 MHz 0.0139 910 µs
fTIMxCLK = 144 MHz 0.0069 455 µs
- - 65536 × 65536 tTIMxCLK
Maximum possible count
tMAX_COUNT fTIMxCLK = 72 MHz - 59.65 s
with 32-bit counter
fTIMxCLK = 144 MHz - 29.825 s
1. TIMx is used as a general term to refer to the TIM1, TIM2, TIM3, TIM4, TIM8, TIM15, TIM16, TIM17 and
TIM20 timers.
2. Guaranteed by design, not tested in production.

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Table 71. IWDG min/max timeout period at 40 kHz (LSI) (1)

Min timeout (ms) RL[11:0]= Max timeout (ms) RL[11:0]=
Prescaler divider PR[2:0] bits
0x000 0xFFF

/4 0 0.1 409.6
/8 1 0.2 819.2
/16 2 0.4 1638.4
/32 3 0.8 3276.8
/64 4 1.6 6553.6
/128 5 3.2 13107.2
/256 7 6.4 26214.4
1. These timings are given for a 40 kHz clock but the microcontroller internal RC frequency can vary from 30
to 60 kHz. Moreover, given an exact RC oscillator frequency, the exact timings still depend on the phasing
of the APB interface clock versus the LSI clock so that there is always a full RC period of uncertainty.

Table 72. WWDG min-max timeout value @72 MHz (PCLK)(1)

Prescaler WDGTB Min timeout value Max timeout value

1 0 0.05687 3.6409
2 1 0.1137 7.2817
4 2 0.2275 14.564
8 3 0.4551 29.127
1. Guaranteed by design, not tested in production.

6.3.18 Communications interfaces

I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev.03 for:
• Standard-mode (Sm): with a bit rate up to 100 kbit/s
• Fast-mode (Fm): with a bit rate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bit rate up to 1Mbits/s
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to Reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are “true” open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDDIOx is disabled, but is still present. Only FTf I/O pins support
Fm+ low level output current maximum requirement. Refer to Section 6.3.15: I/O port
characteristics.
All I2C I/Os embed an analog filter, refer to the Table 73: I2C analog filter characteristics.

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Table 73. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Pulse width of spikes that are

tAF 50 260 ns
suppressed by the analog filter
1. Guaranteed by design, not tested in production.

SPI/I2S characteristics
Unless otherwise specified, the parameters given in Table 74 for SPI or in Table 75 for I2S
are derived from tests performed under ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 19.
Refer to Section 6.3.15: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).

Table 74. SPI characteristics(1)

Symbol Parameter Conditions Min Typ. Max Unit

Master mode 2.7 V<VDD<3.6 V,

- - 24
SPI1/4
Master mode 2 V<VDD<3.6 V,
18
SPI1/2/3/4
Slave mode 2 V<VDD<3.6 V,
24 MHz
fSCK SPI1/4
SPI clock frequency
1/tc(SCK) Slave mode 2 V<VDD<3.6 V,
18
SPI1/2/3/4
Slave mode transmitter/full duplex
16.5(2)
2 V<VDD<3.6 V, SPI1/2/3/4
Slave mode transmitter/full duplex
22.5(2)) -
2.7 V<VDD<3.6 V, SPI1/4
Duty cycle of SPI clock
Duty(SCK) Slave mode 30 50 70 %
frequency
tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4*Tpclk - -
th(NSS) NSS hold time Slave mode, SPI presc = 2 2*Tpclk - -
tw(SCKH)
SCK high and low time Master mode Tpclk-2 Tpclk Tpclk+2
tw(SCKL)
tsu(MI) Master mode 3 - -
Data input setup time
tsu(SI) Slave mode 3 - -
th(MI) Master mode 6.5 - -
Data input hold time
th(SI) Slave mode 4.5 - -
ta(SO) Data output access time Slave mode 10 - 30
tdis(SO) Data output disable time Slave mode 8 - 7

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Table 74. SPI characteristics(1) (continued)

Symbol Parameter Conditions Min Typ. Max Unit

Slave mode 2.7 V<VDD<3.6 V - 15 22

tv(SO)
Data output valid time Slave mode 2 V<VDD<3.6 V - 15 30
tv(MO) Master mode - 2 4.5
th(SO) Slave mode 9 - -
Data output hold time
th(MO) Master mode 0 - -
1. Data based on characterization results, not tested in production.
2. The maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into
SCK low or high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a
master having tsu(MI) = 0 while Duty(SCK) = 50%.

Figure 42. SPI timing diagram - slave mode and CPHA = 0

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Figure 43. SPI timing diagram - slave mode and CPHA = 1(1)

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Table 75. I2S characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main clock output - 256 x 8K 256xFs (2) MHz

Master data: 32 bits - 64xFs MHz
fCK I2S clock frequency
Slave data: 32 bits - 64xFs -
I2S clock frequency duty
DCK Slave receiver 30 70 %
cycle
tv(WS) WS valid time Master mode - 20
th(WS) WS hold time Master mode 2 -
tsu(WS) WS setup time Slave mode 0 -
th(WS) WS hold time Slave mode 4 -
tsu(SD_MR) Master receiver 1 -
Data input setup time
tsu(SD_SR) Slave receiver 1 -
th(SD_MR) Master receiver 8 -
Data input hold time
th(SD_SR) Slave receiver 2.5 - ns

Slave transmitter
tv(SD_ST) - 50
(after enable edge)
Data output valid time
Master transmitter
tv(SD_MT) - 22
(after enable edge)
Slave transmitter (after
th(SD_ST) 8 -
enable edge)
Data output hold time
Master transmitter
th(SD_MT) 1 -
(after enable edge)
1. Data based on characterization results, not tested in production.
2. 256xFs maximum is 36 MHz (APB1 Maximum frequency)

Note: Refer to the I2S section in RM0316 Reference Manual for more details about the sampling
frequency (Fs), fMCK, fCK, DCK values reflect only the digital peripheral behavior, source
clock precision might slightly change the values DCK depends mainly on ODD bit value.
Digital contribution leads to a min of (I2SDIV/(2*I2SDIV+ODD) and a max of
(I2SDIV+ODD)/(2*I2SDIV+ODD) and Fs max supported for each mode/condition.

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Figure 45. I2S slave timing diagram (Philips protocol)(1)

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1. Measurement points are done at 0.5VDD and with external CL=30 pF.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

Figure 46. I2S master timing diagram (Philips protocol)(1)

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1. Measurement points are done at 0.5VDD and with external CL=30 pF.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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USB characteristics

Table 76. USB startup time

Symbol Parameter Max Unit

tSTARTUP(1) USB transceiver startup time 1 µs

1. Guaranteed by design, not tested in production.

Table 77. USB DC electrical characteristics

Symbol Parameter Conditions Min.(1) Max.(1) Unit

Input levels

VDD USB operating voltage(2) - 3.0(3) 3.6 V

VDI(4) Differential input sensitivity I(USB_DP, USB_DM) 0.2 -
VCM(4) Differential common mode range Includes VDI range 0.8 2.5 V
VSE(4) Single ended receiver threshold - 1.3 2.0

Output levels

VOL Static output level low RL of 1.5 kΩ to 3.6 V(5) - 0.3

V
VOH Static output level high RL of 15 kΩ to VSS(5) 2.8 3.6
1. All the voltages are measured from the local ground potential.
2. To be compliant with the USB 2.0 full-speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 kΩ resistor to a 3.0-to-3.6 V voltage range.
3. The STM32F303xD/E USB functionality is ensured down to 2.7 V but not the full USB electrical
characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
4. Guaranteed by design, not tested in production.
5. RL is the load connected on the USB drivers.

Figure 47. USB timings: definition of data signal rise and fall time

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Table 78. USB: full-speed electrical characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Driver characteristics

tr Rise time(2) CL = 50 pF 4 - 20 ns
tf Fall time(2) CL = 50 pF 4 - 20 ns

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Table 78. USB: full-speed electrical characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

trfm Rise/ fall time matching tr/tf 90 - 110 %

VCRS Output signal crossover voltage - 1.3 - 2.0 V
Output driver
Z driving high and low 28 40 44 Ω
Impedance(3) DRV
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed information, refer to USB Specification - Chapter 7
(version 2.0).
3. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-), the matching impedance is
already included in the embedded driver.

CAN (controller area network) interface

Refer to Section 6.3.15: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).

6.3.19 ADC characteristics

Unless otherwise specified, the parameters given in Table 79 to Table 82 are guaranteed by
design, with conditions summarized in Table 19.

Table 79. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

Analog supply voltage for

VDDA - 2.0 - 3.6 V
ADC
Single-ended mode,
- 907 1033
5 MSPS
Single-ended mode,
- 194 285.5
1 MSPS
Single-ended mode,
- 51.5 70
Current on VDDA pin 200 KSPS
IDDA µA
(see Figure 48) Differential mode,
- 887.5 1009
5 MSPS
Differential mode,
- 212 285
1 MSPS
Differential mode,
- 51 69.5
200 KSPS

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Table 79. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Single-ended mode,
- 104 139
5 MSPS
Single-ended mode,
- 20.4 37
1 MSPS
Single-ended mode,
- 3.3 11.3
Current on VREF+ pin 200 KSPS
IREF µA
(see Figure 49) Differential mode,
- 174 235
5 MSPS
Differential mode,
- 34.6 52.6
1 MSPS
Differential mode,
- 6 13.6
200 KSPS
VREF+ Positive reference voltage - 2 - VDDA V
fADC ADC clock frequency - 0.14 - 72 MHz
Resolution = 12 bits,
0.01 - 5.14
Fast Channel
Resolution = 10 bits,
0.012 - 6
Fast Channel
fS(1) Sampling rate MSPS
Resolution = 8 bits,
0.014 - 7.2
Fast Channel
Resolution = 6 bits,
0.0175 - 9
Fast Channel
fADC = 72 MHz
- - 5.14 MHz
fTRIG (1) External trigger frequency Resolution = 12 bits
Resolution = 12 bits - - 14 1/fADC
VAIN Conversion voltage range(2) - 0 - VREF+ V
RAIN(1) External input impedance - - - 100 kΩ
Internal sample and hold
CADC(1) - - 5 - pF
capacitor
tSTAB(1) Power-up time - 0 0 1 µs
fADC = 72 MHz 1.56 µs
tCAL(1) Calibration time
- 112 1/fADC
CKMODE = 00 1.5 2 2.5 1/fADC
Trigger conversion latency
Regular and injected CKMODE = 01 - - 2 1/fADC
tlatr(1)
channels without conversion CKMODE = 10 - - 2.25 1/fADC
abort
CKMODE = 11 - - 2.125 1/fADC
CKMODE = 00 2.5 3 3.5 1/fADC
Trigger conversion latency CKMODE = 01 - - 3 1/fADC
tlatrinj(1) Injected channels aborting a
regular conversion CKMODE = 10 - - 3.25 1/fADC
CKMODE = 11 - - 3.125 1/fADC

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Table 79. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit
fADC = 72 MHz 0.021 - 8.35 µs
tS(1) Sampling time
- 1.5 - 601.5 1/fADC
TADCVREG ADC Voltage Regulator
(1) - - - 10 µs
_STUP Start-up time
fADC = 72 MHz
0.19 - 8.52 µs
Resolution = 12 bits
Total conversion time
tCONV(1) 14 to 614 (tS for sampling + 12.5
(including sampling time)
Resolution = 12 bits for 1/fADC
successive approximation)
(VSSA + (VSSA +
Common Mode Input signal (VSSA +
CMIR ADC differential mode VREF+)/2 VREF+)/2 V
range VREF+)/2
– 0.18 + 0.18
1. Data guaranteed by design, not tested in Production.
2. VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA, depending on the package.
Refer to Section 4: Pinout and pin description for further details.

Figure 48. ADC typical current consumption on VDDA pin




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Figure 49. ADC typical current consumption on VREF+ pin



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Table 80. Maximum ADC RAIN (1)

RAIN max (kΩ)
Sampling Sampling
Resolution cycle @ time [ns] @
Slow Other
72 MHz 72 MHz Fast channels(2)
channels channels(3)

1.5 20.83 0.018 NA NA

2.5 34.72 0.150 NA 0.022
4.5 62.50 0.470 0.220 0.180
7.5 104.17 0.820 0.560 0.470
12 bits
19.5 270.83 2.70 1.80 1.50
61.5 854.17 8.20 6.80 4.70
181.5 2520.83 22.0 18.0 15.0
601.5 8354.17 82.0 68.0 47.0
1.5 20.83 0.082 NA NA
2.5 34.72 0.270 0.082 0.100
4.5 62.50 0.560 0.390 0.330
7.5 104.17 1.20 0.82 0.68
10 bits
19.5 270.83 3.30 2.70 2.20
61.5 854.17 10.0 8.2 6.8
181.5 2520.83 33.0 27.0 22.0
601.5 8354.17 100.0 82.0 68.0

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Table 80. Maximum ADC RAIN (1) (continued)

RAIN max (kΩ)
Sampling Sampling
Resolution cycle @ time [ns] @
Slow Other
72 MHz 72 MHz Fast channels(2)
channels channels(3)

1.5 20.83 0.150 NA 0.039

2.5 34.72 0.390 0.180 0.180
4.5 62.50 0.820 0.560 0.470
7.5 104.17 1.50 1.20 1.00
8 bits
19.5 270.83 3.90 3.30 2.70
61.5 854.17 12.00 12.00 8.20
181.5 2520.83 39.00 33.00 27.00
601.5 8354.17 100.00 100.00 82.00
1.5 20.83 0.270 0.100 0.150
2.5 34.72 0.560 0.390 0.330
4.5 62.50 1.200 0.820 0.820
7.5 104.17 2.20 1.80 1.50
6 bits
19.5 270.83 5.60 4.70 3.90
61.5 854.17 18.0 15.0 12.0
181.5 2520.83 56.0 47.0 39.0
601.5 8354.17 100.00 100.0 100.0
1. Data based on characterization results, not tested in production.
2. All fast channels, expect channels on PA2, PA6, PB1, PB12.
3. Fast channels available on PA2, PA6, PB1, PB12.

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Table 81. ADC accuracy - limited test conditions, 100-/144-pin packages (1)(2)
Min Max
Symbol Parameter Conditions (3) Typ (3) Unit

Fast channel 5.1 Ms - ±3.5 ±4.5

Single ended
Total Slow channel 4.8 Ms - ±4 ±4.5
ET unadjusted
error Fast channel 5.1 Ms - ±3 ±3
Differential
Slow channel 4.8 Ms - ±3 ±3
Fast channel 5.1 Ms - ±1 ±1.5
Single ended
Slow channel 4.8 Ms - ±1 ±2.5
EO Offset error
Fast channel 5.1 Ms - ±1 ±1.5
Differential
Slow channel 4.8 Ms - ±1 ±1.5
Fast channel 5.1 Ms - ±3 ±4
Single ended
Slow channel 4.8 Ms - ±3.5 ±4
EG Gain error LSB
Fast channel 5.1 Ms - ±1.5 ±2.5
Differential
Slow channel 4.8 Ms - ±2 ±2.5
ADC clock freq. ≤ 72 MHz Fast channel 5.1 Ms - ±1 ±1.5
Sampling freq. ≤ 5 Msps Single ended
Differential Slow channel 4.8 Ms - ±1 ±1.5
ED linearity VDDA = VREF+ = 3.3 V
error 25°C Fast channel 5.1 Ms - ±1 ±1
Differential
100-pin/144-pin package Slow channel 4.8 Ms - ±1 ±1
Fast channel 5.1 Ms - ±1.5 ±2
Single ended
Integral Slow channel 4.8 Ms - ±1.5 ±3
EL linearity
error Fast channel 5.1 Ms - ±1 ±1.5
Differential
Slow channel 4.8 Ms - ±1 ±1.5
Fast channel 5.1 Ms 10.7 10.8 -
Single ended
Effective Slow channel 4.8 Ms 10.7 10.8 -
ENOB(4) number of bits
bits Fast channel 5.1 Ms 11.2 11.3 -
Differential
Slow channel 4.8 Ms 11.1 11.3 -
Fast channel 5.1 Ms 66 67 -
Signal-to- Single ended
noise and Slow channel 4.8 Ms 66 67 -
SINAD(4) dB
distortion Fast channel 5.1 Ms 69 70 -
ratio Differential
Slow channel 4.8 Ms 69 70 -

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Table 81. ADC accuracy - limited test conditions, 100-/144-pin packages (1)(2) (continued)
Min Max
Symbol Parameter Conditions (3) Typ (3) Unit

Fast channel 5.1 Ms 66 67 -

Single ended
Signal-to- Slow channel 4.8 Ms 66 67 -
SNR(4)
noise ratio ADC clock freq. ≤ 72 MHz Fast channel 5.1 Ms 69 70 -
Sampling freq ≤ 5 Msps Differential
Slow channel 4.8 Ms 69 70 -
VDDA = VREF+ = 3.3 V dB
Fast channel 5.1 Ms - -76 -76
25°C Single ended
Total 100-pin/144-pin package Slow channel 4.8 Ms - -76 -76
THD(4) harmonic
distortion Fast channel 5.1 Ms - -80 -80
Differential
Slow channel 4.8 Ms - -80 -80
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.
4. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.

Table 82. ADC accuracy, 100-pin/144-pin packages(1)(2)(3)

Symbol Parameter Conditions Min (4) Max(4) Unit

Single Fast channel 5.1 Ms - ±6.5

Total Ended Slow channel 4.8 Ms - ±6.5
ET unadjusted
error Fast channel 5.1 Ms - ±4
Differential
Slow channel 4.8 Ms - ±4

Single Fast channel 5.1 Ms - ±3

Ended Slow channel 4.8 Ms - ±3
EO Offset error
Fast channel 5.1 Ms - ±2
ADC clock freq. ≤ 72 MHz, Differential
Sampling freq. ≤ 5 Msps Slow channel 4.8 Ms - ±2
LSB
2.0 V ≤ VDDA, VREF+ ≤ 3.6 V Fast channel 5.1 Ms - ±6
Single
100-pin/144-pin package Ended Slow channel 4.8 Ms - ±6
EG Gain error
Fast channel 5.1 Ms - ±3
Differential
Slow channel 4.8 Ms - ±3

Single Fast channel 5.1 Ms - ±1.5

Differential Ended Slow channel 4.8 Ms - ±1.5
ED linearity
error Fast channel 5.1 Ms - ±1.5
Differential
Slow channel 4.8 Ms - ±1.5

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Table 82. ADC accuracy, 100-pin/144-pin packages(1)(2)(3) (continued)

Symbol Parameter Conditions Min (4) Max(4) Unit

Single Fast channel 5.1 Ms - ±2

Integral Ended Slow channel 4.8 Ms - ±3
EL linearity LSB
error Fast channel 5.1 Ms - ±2
Differential
Slow channel 4.8 Ms - ±2

Single Fast channel 5.1 Ms 10.4 -

Effective Ended Slow channel 4.8 Ms 10.2 -
ENOB
(5) number of bits
bits Fast channel 5.1 Ms 10.8 -
Differential
Slow channel 4.8 Ms 10.8 -

Single Fast channel 5.1 Ms 64 -

Signal-to- ADC clock freq. ≤ 72 MHz,
Ended Slow channel 4.8 Ms 63 -
SINAD noise and Sampling freq. ≤ 5 Msps,
(5) distortion 2.0 V≤ VDDA, VREF+ ≤ 3.6 V Fast channel 5.1 Ms 67 -
ratio 100-pin/144-pin package Differential
Slow channel 4.8 Ms 67 -

Single Fast channel 5.1 Ms 64 -

Ended Slow channel 4.8 Ms 64 -
Signal-to-
SNR(5) dB
noise ratio Fast channel 5.1 Ms 67 -
Differential
Slow channel 4.8 Ms 67 -

Single Fast channel 5.1 Ms - 74

Total Ended Slow channel 4.8 Ms - -74
THD(5) harmonic
distortion Fast channel 5.1 Ms - -78
Differential
Slow channel 4.8 Ms - -76
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges.
4. Data based on characterization results, not tested in production.
5. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.

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Table 83. ADC accuracy - limited test conditions, 64-pin packages(1)(2)

Min Max
Symbol Parameter Conditions (3) Typ (3) Unit

Fast channel 5.1 Ms - ±4 ±4.5

Single ended
Total Slow channel 4.8 Ms - ±5.5 ±6
ET unadjusted
error Fast channel 5.1 Ms - ±3.5 ±4
Differential
Slow channel 4.8 Ms - ±3.5 ±4
Fast channel 5.1 Ms - ±2 ±2
Single ended
Slow channel 4.8 Ms - ±1.5 ±2
EO Offset error
Fast channel 5.1 Ms - ±1.5 ±2
Differential
Slow channel 4.8 Ms - ±1.5 ±2
Fast channel 5.1 Ms - ±3 ±4
Single ended
Slow channel 4.8 Ms - ±5 ±5.5
EG Gain error LSB
Fast channel 5.1 Ms - ±3 ±3
Differential
Slow channel 4.8 Ms - ±3 ±3.5
ADC clock freq. ≤ 72 MHz Fast channel 5.1 Ms - ±1 ±1
Sampling freq. ≤ 5 Msps Single ended
Differential Slow channel 4.8 Ms - ±1 ±1
ED linearity VDDA = 3.3 V
error 25°C Fast channel 5.1 Ms - ±1 ±1
Differential
64-pin package Slow channel 4.8 Ms - ±1 ±1
Fast channel 5.1 Ms - ±1.5 ±2
Single ended
Integral Slow channel 4.8 Ms - ±2 ±3
EL linearity
error Fast channel 5.1 Ms - ±1.5 ±1.5
Differential
Slow channel 4.8 Ms - ±1.5 ±2
Fast channel 5.1 Ms 10.8 10.8 -
Single ended
Effective Slow channel 4.8 Ms 10.8 10.8 -
ENOB
(4) number of bit
bits Fast channel 5.1 Ms 11.2 11.3 -
Differential
Slow channel 4.8 Ms 11.2 11.3 -
Fast channel 5.1 Ms 66 67 -
Signal-to- Single ended
SINAD noise and Slow channel 4.8 Ms 66 67 -
(4) dB
distortion Fast channel 5.1 Ms 69 70 -
ratio Differential
Slow channel 4.8 Ms 69 70 -

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Table 83. ADC accuracy - limited test conditions, 64-pin packages(1)(2) (continued)
Min Max
Symbol Parameter Conditions (3) Typ (3) Unit

Fast channel 5.1 Ms 66 67 -

Single ended
Signal-to- Slow channel 4.8 Ms 66 67 -
SNR(4)
noise ratio ADC clock freq. ≤ 72 MHz Fast channel 5.1 Ms 69 70 -
Sampling freq ≤ 5 Msps Differential
Slow channel 4.8 Ms 69 70 -
VDDA = 3.3 V dB
Fast channel 5.1 Ms - -80 -80
25°C Single ended
Total 64-pin package Slow channel 4.8 Ms - -78 -77
THD(4) harmonic
distortion Fast channel 5.1 Ms - -83 -82
Differential
Slow channel 4.8 Ms - -81 -80
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.
4. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.

Table 84. ADC accuracy, 64-pin packages(1)(2)(3)

Max
Symbol Parameter Conditions Min(4) (4) Unit

Fast channel 5.1 Ms - ±6.5

Single ended
Total Slow channel 4.8 Ms - ±6.5
ET unadjusted
error Fast channel 5.1 Ms - ±4
Differential
Slow channel 4.8 Ms - ±4.5
Fast channel 5.1 Ms - ±3
Single ended
Slow channel 4.8 Ms - ±3
EO Offset error
Fast channel 5.1 Ms - ±2.5
ADC clock freq. ≤ 72 MHz, Differential
Sampling freq. ≤ 5 Msps Slow channel 4.8 Ms - ±2.5
LSB
2.0 V ≤ VDDA ≤ 3.6 V Fast channel 5.1 Ms - ±6
64-pin package Single ended
Slow channel 4.8 Ms - ±6
EG Gain error
Fast channel 5.1 Ms - ±3.5
Differential
Slow channel 4.8 Ms - ±4
Fast channel 5.1 Ms - ±1.5
Single ended
Differential Slow channel 4.8 Ms - ±1.5
ED linearity
error Fast channel 5.1 Ms - ±1.5
Differential
Slow channel 4.8 Ms - ±1.5

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Table 84. ADC accuracy, 64-pin packages(1)(2)(3) (continued)

Max
Symbol Parameter Conditions Min(4) (4) Unit

Fast channel 5.1 Ms - ±3

Single ended
Integral Slow channel 4.8 Ms - ±3.5
EL linearity LSB
error Fast channel 5.1 Ms - ±2
Differential
Slow channel 4.8 Ms - ±2.5
Fast channel 5.1 Ms 10.4 -
Single ended
Effective Slow channel 4.8 Ms 10.4 -
ENOB
(5) number of bits
bits Fast channel 5.1 Ms 10.8 -
Differential
Slow channel 4.8 Ms 10.8 -
Fast channel 5.1 Ms 64 -
Signal-to- ADC clock freq. ≤ 72 MHz, Single ended
SINAD noise and Sampling freq ≤ 5 Msps, Slow channel 4.8 Ms 63 -
(5) dB
distortion 2.0 V ≤ VDDA ≤ 3.6 V Fast channel 5.1 Ms 67 -
ratio 64-pin package Differential
Slow channel 4.8 Ms 67 -
Fast channel 5.1 Ms 64 -
Single ended
Signal-to- Slow channel 4.8 Ms 64 -
SNR(5)
noise ratio Fast channel 5.1 Ms 67 -
Differential
Slow channel 4.8 Ms 67 -
dB
Fast channel 5.1 Ms - -75
Single ended
Total Slow channel 4.8 Ms - -75
THD(5) harmonic
distortion Fast channel 5.1 Ms - -79
Differential
Slow channel 4.8 Ms - -78
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges.
4. Data based on characterization results, not tested in production.
5. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.

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Table 85. ADC accuracy at 1MSPS(1)(2)

Symbol Parameter Test conditions Typ Max(3) Unit

Fast channel ±2.5 ±5

ET Total unadjusted error
Slow channel ±3.5 ±5
Fast channel ±1 ±2.5
EO Offset error
Slow channel ±1.5 ±2.5
ADC Freq ≤ 72 MHz
Sampling Freq ≤ 1MSPS Fast channel ±2 ±3
EG Gain error LSB
2.4 V ≤ VDDA = VREF+ ≤ 3.6 V Slow channel ±3 ±4
Single-ended mode
Fast channel ±0.7 ±2
ED Differential linearity error
Slow channel ±0.7 ±2
Fast channel ±1 ±3
EL Integral linearity error
Slow channel ±1.2 ±3
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current. Any positive injection current
within the limits specified for IINJ(PIN) and ∑IINJ(PIN) in Section 6.3.15: I/O port characteristics does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.

Figure 50. ADC accuracy characteristics

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Figure 51. Typical connection diagram using the ADC

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1. Refer to Table 79 for the values of RAIN.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 12. The 10 nF capacitor
should be ceramic (good quality) and it should be placed as close as possible to the chip.

6.3.20 DAC electrical specifications

Table 86. DAC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 2.4 - 3.6 V

RLOAD (1) Resistive load DAC output buffer ON 5 - - kΩ
Dac output buffer ON:
5 - - kΩ
connected to VSSA
RL Resistive load
Dac output buffer ON:
25 - - kΩ
connected to VDDA
RO(1) Output impedance DAC output buffer OFF - - 15 kΩ
CLOAD(1) Capacitive load DAC output buffer ON - - 50 pF
Corresponds to 12-bit input
code (0x0E0) to (0xF1C) at
VDDA = 3.6 V
Voltage on DAC_OUT 0.2 - VDDA – 0.2 V
VDAC_OUT (1) and (0x155) and (0xEAB) at
output VDDA = 2.4 V DAC output
buffer ON.
DAC output buffer OFF - 0.5 VDDA - 1LSB mV

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Table 86. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

DAC DC current
With no load, worst code
IREF consumption in quiescent - - 220 µA
(0xF1C) on the input
mode (Standby mode)
With no load, middle code
DAC DC current - - 380 µA
(0x800) on the input.
IDDA(3) consumption in quiescent
mode (Standby mode)(2) With no load, worst code
- - 480 µA
(0xF1C) on the input.
Differential non linearity Given for a 10-bit input code - - ±0.5 LSB
DNL(3) Difference between two
consecutive code-1LSB) Given for a 12-bit input code - - ±2 LSB

Integral non linearity Given for a 10-bit input code - - ±1 LSB

(difference between
measured value at Code i
INL(3)
and the value at Code i on a Given for a 12-bit input code - - ±4 LSB
line drawn between Code 0
and last Code 4095)
- - - ±10 mV
Offset error (difference
Given for a 10-bit input code
between measured value at - - ±3 LSB
Offset(3) at VDDA = 3.6 V
Code (0x800) and the ideal
value = VDDA/2) Given for a 12-bit input code
- - ±12 LSB
at VDDA = 3.6 V
Gain error(3) Gain error Given for a 12-bit input code - - ±0.5 %
Settling time (full scale: for a
12-bit input code transition
between the lowest and the CLOAD ≤50 pF,
tSETTLING(3) - 3 4 µs
highest input codes when RLOAD ≥ 5 kΩ
DAC_OUT reaches final
value ±1LSB
conver
tSTAB Power-up time - 1 sion
cycle
Max frequency for a correct
(3) DAC_OUT change when CLOAD ≤50 pF,
Update rate - - 1 MS/s
small variation in the input RLOAD ≥ 5 kΩ
code (from code i to i+1LSB)
Wakeup time from off state CLOAD ≤50 pF,
tWAKEUP(3) (Setting the ENx bit in the - 6.5 10 µs
RLOAD ≥ 5 kΩ
DAC Control register)
Power supply rejection ratio C
LOAD = 50 pF,
PSRR+ (1) (to VDDA) (static DC - –67 –40 dB
measurement No RLOAD ≥ 5 kΩ,

DAC buffer ON
Iskink(1) Output sink current Output level higher 100 - - µA
than 0.2 V
1. Guaranteed by design, not tested in production.

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2. Quiescent mode refers to the state of the DAC a keeping steady value on the output, so no dynamic consumption is
involved.
3. Data based on characterization results, not tested in production.

Figure 52. 12-bit buffered /non-buffered DAC

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1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by
configuring the BOFFx bit in the DAC_CR register.

6.3.21 Comparator characteristics

Table 87. Comparator characteristics(1)

Symbol Parameter Conditions Min. Typ. Max. Unit

VDDA Analog supply voltage - 2 - 3.6

Comparator input voltage
VIN - 0 - VDDA V
range
VBG Scaler input voltage - - VREFINIT -
VSC Scaler offset voltage - - ±5 ±10 mV
Scaler startup time from
tS_SC - - - 0.2 ms
power down
VDDA ≥ 2.7 V - - 4
tSTART Comparator startup time µs
VDDA < 2.7 V - - 10

Propagation delay for VDDA ≥ 2.7 V - 25 28

200 mV step with 100 mV
overdrive VDDA < 2.7 V - 28 30
tD ns
Propagation delay for full VDDA ≥ 2.7 V - 32 35
range step with 100 mV
overdrive VDDA < 2.7 V - 35 40

VDDA ≥ 2.7 V - ±5 ±10

VOFFSET Comparator offset error mV
VDDA < 2.7 V - - ±25

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Table 87. Comparator characteristics(1) (continued)

Symbol Parameter Conditions Min. Typ. Max. Unit

TVOFFSET Total offset variation Full temperature range - - 3 mV

COMP current
IDDA - - 400 600 µA
consumption
1. Guaranteed by design, not tested in production.

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6.3.22 Operational amplifier characteristics

Table 88. Operational amplifier characteristics(1)

Symbol Parameter Condition Min Typ Max Unit

VDDA Analog supply voltage - 2.4 - 3.6 V

CMIR Common mode input range - 0 - VDDA V
25°C, No Load
Maximum - - 4
on output.
calibration
range All
- - 6
Input offset voltage/Temp.
VIOFFSET mV
voltage 25°C, No Load
- - 1.6
After offset on output.
calibration All
- - 3
voltage/Temp.
ΔVIOFFSET Input offset voltage drift - - 5 - µV/°C
ILOAD Drive current - - - 500 µA
No load,
IDDA OPAMP consumption - 690 1450 µA
quiescent mode
ADC sampling time when reading
TS_OPAMP_VOUT - 400 - - ns
the OPAMP output.
CMRR Common mode rejection ratio - - 90 - dB
PSRR Power supply rejection ratio DC 73 117 - dB
GBW Bandwidth - - 8.2 - MHz
SR Slew rate - - 4.7 - V/µs
RLOAD Resistive load - 4 - - kΩ
CLOAD Capacitive load - - - 50 pF
Rload = min,
VDDA-100 - -
Input at VDDA.
VOHSAT High saturation voltage(2)
Rload = 20K,
VDDA-20 - -
Input at VDDA.
mV
Rload = min,
- - 100
input at 0V
VOLSAT Low saturation voltage(2)
Rload = 20K,
- - 20
input at 0V.
ϕm Phase margin - - 62 - °
Offset trim time: during calibration,
tOFFTRIM minimum time needed between - - - 2 ms
two steps to have 1 mV accuracy
CLOAD ≤50 pf,
RLOAD ≥ 4 kΩ,
tWAKEUP Wake up time from OFF state. - 2.8 5 µs
Follower
configuration

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Table 88. Operational amplifier characteristics(1) (continued)

Symbol Parameter Condition Min Typ Max Unit

- 2 - -
- 4 - -
PGA gain Non inverting gain value -
- 8 - -
- 16 - -
Gain=2 - 5.4/5.4 -

R2/R1 internal resistance values in Gain=4 - 16.2/5.4 -

Rnetwork kΩ
PGA mode (3) Gain=8 - 37.8/5.4 -
Gain=16 - 40.5/2.7 -
PGA gain error PGA gain error - -1% - 1% -
Ibias OPAMP input bias current - - - ±0.2(4) µA
PGA Gain = 2,
Cload = 50pF, - 4 -
Rload = 4 KΩ
PGA Gain = 4,
Cload = 50pF, - 2 -
PGA bandwidth for different non Rload = 4 KΩ
PGA BW MHz
inverting gain PGA Gain = 8,
Cload = 50pF, - 1 -
Rload = 4 KΩ
PGA Gain = 16,
Cload = 50pF, - 0.5 -
Rload = 4 KΩ
@ 1KHz, Output
loaded with - 109 -
4 KΩ

en Voltage noise density nV

-----------
@ 10KHz, Hz
Output loaded - 43 -
with 4 KΩ

1. Guaranteed by design, not tested in production.

2. The saturation voltage can be also limited by the Iload (drive current).
3. R2 is the internal resistance between OPAMP output and OPAMP inverting input.
R1 is the internal resistance between OPAMP inverting input and ground.
The PGA gain =1+R2/R1
4. Mostly TTa I/O leakage, when used in analog mode.

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Figure 53. OPAMP voltage noise versus frequency

6.3.23 Temperature sensor characteristics

Table 89. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - ±1 ±2 °C

Avg_Slope(1) Average slope 4.0 4.3 4.6 mV/°C
V25 Voltage at 25 °C 1.34 1.43 1.52 V
tSTART(1) Startup time 4 - 10 µs
ADC sampling time when reading the
TS_temp(1)(2) 2.2 - - µs
temperature
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.

Table 90. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at

TS_CAL1 temperature of 30 °C, 0x1FFF F7B8 - 0x1FFF F7B9
VDDA= 3.3 V
TS ADC raw data acquired at
TS_CAL2 temperature of 110 °C 0x1FFF F7C2 - 0x1FFF F7C3
VDDA= 3.3 V

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6.3.24 VBAT monitoring characteristics

Table 91. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 50 - KΩ

Q Ratio on VBAT measurement - 2 - -
(1)
Er Error on Q -1 - +1 %
ADC sampling time when reading the VBAT
TS_vbat(1)(2) 2.2 - - µs
1mV accuracy
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.

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7 Package information

7.1 Package mechanical data

To meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

7.2 LQFP144 package information

LQFP144 is a 144-pin, 20 x 20 mm low-profile quad flat package.

Figure 54. LQFP144 package outline

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1. Drawing is not to scale.

152/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

Table 92. LQFP144 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.8740
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 - 17.500 - - 0.6890 -
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 - 17.500 - - 0.6890 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

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Package information STM32F303xD STM32F303xE

Figure 55. Recommended footprint for the LQFP144 package


 

  



 


 

 



DLH

1. Drawing is not to scale.

2. Dimensions are expressed in millimeters.

154/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

Device marking for LQFP144

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 56. LQFP144 marking example (package top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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Package information STM32F303xD STM32F303xE

7.3 UFBGA100 package information

UFBGA100 is a 100-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package.

Figure 57. UFBGA100 package outline

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‘ HHH 0 = < ;
‘ III 0 = $&B0(B9

1. Drawing is not to scale.

Table 93. UFBGA100 package mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 - 0.130 - - 0.0051 -
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
D 6.950 7.000 7.050 0.2736 0.2756 0.2776
D1 5.450 5.500 5.550 0.2146 0.2165 0.2185
E 6.950 7.000 7.050 0.2736 0.2756 0.2776
E1 5.450 5.500 5.550 0.2146 0.2165 0.2185
e - 0.500 - - 0.0197 -
F 0.700 0.750 0.800 0.0276 0.0295 0.0315

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Table 93. UFBGA100 package mechanical data (continued)

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

ddd - - 0.100 - - 0.0039

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 58. Recommended footprint for the UFBGA100 package

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'VP 069

Table 94. UFBGA100 recommended PCB design rules (0.5 mm pitch BGA)
Dimension Recommended values

Pitch 0.5
Dpad 0.27 mm
0.35 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Solder paste 0.27 mm aperture diameter.

Note: Non-solder mask defined (NSMD) pads are recommended.

Note: 4 to 6 mils solder paste screen printing process.

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Device marking for UFBGA100

The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 59. UFBGA100 marking example (package top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

158/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

7.4 LQFP100 package information

LQFP100 is a 100-pin, 14 x 14 mm low-profile quad flat package.

Figure 60. LQFP100 package outline

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Table 95. LQPF100 package mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378

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Package information STM32F303xD STM32F303xE

Table 95. LQPF100 package mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

D1 13.800 14.000 14.200 0.5433 0.5512 0.5591

D3 - 12.000 - - 0.4724 -
E 15.800 16.000 16.200 0.6220 0.6299 0.6378
E1 13.800 14.000 14.200 0.5433 0.5512 0.5591
E3 - 12.000 - - 0.4724 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0.0° 3.5° 7.0° 0.0° 3.5° 7.0°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 61. Recommended footprint for the LQFP100 package

 

 




 

 


 





AIC

1. Drawing is not to scale.

2. Dimensions are expressed in millimeters.

160/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

Device marking for LQFP100

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 62. LQFP100 marking example (package top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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Package information STM32F303xD STM32F303xE

7.5 WLCSP100 package information

WLCSP100 is a 100-ball, 4.775 x 5.041 mm, 0.4 mm pitch wafer level chip scale package.

Figure 63.WLCSP100 package outline

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1. Drawing is not to scale.

162/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

Table 96. WLCSP100 package mechanical data

millimeters inches(1)
Symbol
Min Typ Max Typ Min Max

A 0.525 0.555 0.585 0.0207 0.0219 0.0230

A1 - 0.175 - - 0.0069 -
A2 - 0.38 - - 0.0150 -
(2)
A3 - 0.025 - - 0.0010 -
(3)
Øb 0.22 0.25 0.28 - 0.0098 0.0110
D 4.74 4.775 4.81 - 0.1880 0.1894
E 5.006 5.041 5.076 - 0.1985 0.1998
e - 0.4 - - 0.0157 -
e1 - 3.6 - - 0.1417 -
e2 - 3.6 - - 0.1417 -
F - 0.5875 - - 0.0231 -
G - 0.7205 - - 0.0284 -
N - 100 - - 3.9370 -
aaa - 0.1 - - 0.0039 -
bbb - 0.1 - - 0.0039 -
ccc - 0.1 - - 0.0039 -
ddd - 0.05 - - 0.0020 -
eee - 0.05 - - 0.0020 -
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Back side coating.
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 64. Recommended footprint for the WLCSP100 package

'SDG

'VP

:/&63B$5B)3B9

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Package information STM32F303xD STM32F303xE

Table 97. WLCSP100 recommended PCB design rules (0.4 mm pitch)

Dimension Recommended values

Pitch 0.4 mm
Dpad 0.225 mm
Dsm 0.290 mm
Stencil thickness 0.1 mm

Device marking for WLCSP100

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 65. WLCSP100 marking example (package top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

164/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

7.6 LQFP64 package information

LQFP64 is a 64-pin, 10 x 10 mm low-profile quad flat package.

Figure 66. LQFP64 package outline

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1. Drawing is not to scale.

Table 98. LQFP64 package mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D - 12.000 - - 0.4724 -
D1 - 10.000 - - 0.3937 -
D3 - 7.500 - - 0.2953 -
E - 12.000 - - 0.4724 -
E1 - 10.000 - - 0.3937 -

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Table 98. LQFP64 package mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
θ 0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 67. Recommended footprint for the LQFP64 package

 


  






 


 





AIC

1. Dimensions are expressed in millimeters.

166/173 DocID026415 Rev 5

STM32F303xD STM32F303xE Package information

Device marking for LQFP64

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 68. LQFP64 marking example (package top view)

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1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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7.7 Thermal characteristics

The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 19: General operating conditions.
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
• TA max is the maximum temperature in °C,
• ΘJA is the package junction-to- thermal resistance, in ° C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 99. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-

33
LQFP144 - 20 × 20 mm
Thermal resistance junction-
59
UFBGA100 - 7 × 7 mm
Thermal resistance junction-
ΘJA 42 °C/W
LQFP100 - 14 × 14 mm
Thermal resistance junction-
44
WLCSP100 - 0.4 mm pitch
Thermal resistance junction-
46
LQFP64 - 10 × 10 mm / 0.5 mm pitch

7.7.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org

7.7.2 Selecting the product temperature range

When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Section 8: Part numbering.
Each temperature range suffix corresponds to a specific guaranteed temperature at
maximum dissipation and to a specific maximum junction temperature.
As applications do not commonly use the STM32F303xD/E at maximum dissipation, it is
useful to calculate the exact power consumption and junction temperature to determine
which temperature range is best suited to the application.

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The following examples show how to calculate the temperature range needed for a given
application.

Example 1: High-performance application

Assuming the following application conditions:
Maximum temperature TAmax = 82 °C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V and maximum 8 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA × 3.5 V= 175 mW
PIOmax = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW
This gives: PINTmax = 175 mW and PIOmax = 272 mW:
PDmax = 175 + 272 = 447 mW
Using the values obtained in Table 99 TJmax is calculated as follows:
– For LQFP100, 42 °C/W
TJmax = 82 °C + (42 °C/W × 447 mW) = 82 °C + 18.774 °C = 100.774 °C
This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 6 (see
Section 8: Part numbering).
Note: With this given PDmax we can find the TAmax allowed for a given device temperature range
(order code suffix 6 or 7).
Suffix 6: TAmax = TJmax - (42°C/W × 447 mW) = 105-18.774 = 86.226 °C
Suffix 7: TAmax = TJmax - (42°C/W × 447 mW) = 125-18.774 = 106.226 °C

Example 2: High-temperature application

Using the same rules, it is possible to address applications that run at high temperature with
a low dissipation, as long as junction temperature TJ remains within the specified range.
Assuming the following application conditions:
Maximum temperature TAmax = 100 °C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V
PINTmax = 20 mA × 3.5 V= 70 mW
PIOmax = 20 × 8 mA × 0.4 V = 64 mW
This gives: PINTmax = 70 mW and PIOmax = 64 mW:
PDmax = 70 + 64 = 134 mW
Thus: PDmax = 134 mW
Using the values obtained in Table 99 TJmax is calculated as follows:
– For LQFP100, 42 °C/W
TJmax = 100 °C + (42 °C/W × 134 mW) = 100 °C + 5.628 °C = 105.628 °C
This is above the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 7 (see
Section 8: Part numbering) unless we reduce the power dissipation to be able to use suffix 6
parts.

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Package information STM32F303xD STM32F303xE

Refer to Figure 69 to select the required temperature range (suffix 6 or 7) according to your
temperature or power requirements.

Figure 69. LQFP100 PD max vs. TA




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8 Part numbering

For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, contact the nearest ST sales office.

Table 100. Ordering information scheme

Example: STM32 F 303 V E T 6 x

Device family
STM32 = ARM-based 32-bit microcontroller

Product type
F = General-purpose

Sub-family
303 = STM32F303xx

Pin count
R = 64 pins
V = 100 pins
Z = 144 pins

Code size
D = 384 Kbytes of Flash memory
E = 512 Kbytes of Flash memory

Package
H = UFBGA
T = LQFP
Y = WLCSP
Temperature range
6 = –40 to 85 °C
7 = –40 to 105 °C

Options
xxx = programmed parts
TR = tape and reel

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Revision history STM32F303xD STM32F303xE

9 Revision history

Table 101. Document revision history

Date Revision Changes

20-Jan-2015 1 Initial release.

Updated:
– Table 13: STM32F303xD/E pin definitions
– Table 14: STM32F303xD/E alternate function
mapping
30-Jan-2015 2 – Table 38: HSE oscillator characteristics
– Figure 56: LQFP144 marking example (package top
view)
– Figure 62: LQFP100 marking example (package top
view)
Added USB_DM and USB_DP as additional function to
PA11 and PA12 description, respectively in Table 13:
STM32F303xD/E pin definitions.
Updated:
– Figure 56: LQFP144 marking example (package top
03-Mar-2015 3
view),
– Figure 59: UFBGA100 marking example (package top
view),
– Figure 62: LQFP100 marking example (package top
view).
Renamed:
– FMC as FSMC,
– CCM RAM as CCM SRAM.
Removed:
08-Dec-2015 4 – table: I2C timings specification and Figure: I2C bus
AC waveforms and measurement circuit in Section :
I2C interface characteristics.
– Added package information for WLCSP100 in
Section 7: Package information.
Updated:
Table 2: STM32F303xD/E family device features and
peripheral counts, Section 3.17: Ultra-fast comparators
(COMP), Table 66: DAC characteristics, Table 61: ADC
characteristics, Table 13: STM32F303xD/E pin
21-Oct-2016 5
definitions, Table 14: STM32F303xD/E alternate
function mapping, Figure 41: Recommended NRST pin
protection
Added:
Table 37: Wakeup time using USART.

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