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SEMICONDUCTOR TECHNICAL DATA


   
 



 "#
50 AMPERES
NPN SILICON

    &" "$  POWER DARLINGTON

TRANSISTOR
"##$ "# &$ # $$" 850 VOLTS
250 WATTS
!%!  
The BUT34 Darlington transistor is designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated SWITCHMODE applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
CASE 197A–05
• Solenoid and Relay Drivers TO–204AE
• Fast Turn–Off Times

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(TO–3)
0.7 µs Inductive Fall Time at 25_C (Typ)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1.8 µs Inductive Storage Time at 25_C (Typ)
• Operating Temperature Range –65 to 200_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
≈ 50 ≈8

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol BUT34 Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO(sus) 500 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEV 850 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 10 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 50 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Peak (1) ICM 75

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous IB 10 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Peak (1) IBM 15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Free Wheel Diode Forward Current — Continuous IF 50 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Free Wheel Diode Forward Current — Peak IFM 75

Total Power Dissipation @ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PD 250 Watts
@ TC = 100_C 140

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 0.7 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering Purpose: TL 275 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1/8″ from Case for 5 Seconds
x
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BUT34

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Table 1) VCEO(sus) 500 — — Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 100 mA, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEV mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) — — 0.2
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) — — 4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎ IEBO — — 350 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 2.0 V, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with base forward biased IS/b See Figure 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 17

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 16 A, VCE = 5 V) 30 — —
(IC = 32 A, VCE = 5 V) 15 — —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 16 A, IB = 0.8 A) — — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 32 A, IB = 3.2 A) — — 3.0
(IC = 40 A, IB = 4 A)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— — 3.5
(IC = 50 A, IB = 10 A) — — 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 16 A, IB = 0.8 A) — — 2.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 32 A, IB = 3.2 A) — — 2.9
(IC = 40 A, IB = 4 A) — — 3.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Diode Forward Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vf — — 4.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IF = 40 A)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Inductive Load, Clamped (Table 1)
TC = 25_C µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time See Table 1 ts — 1.8 3.0
µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time IC = 32 A tf — 0.7 1.5
TC = 100_C µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time IB1 = 3.2 A ts — 2.2 —
Fall Time VBE(off) = 5 V tf — 0.8 — µs

(1) Pulse Test: PW = 300 µs, Duty Cycle 2%.

2 Motorola Bipolar Power Transistor Device Data

 BUT34
TYPICAL CHARACTERISTICS

400

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

200
4
100
hFE, DC CURRENT GAIN

50
3
30
20
IC = 40 A
10 2
IC = 20 A
5
3 1 TC = 25°C
TC = 25°C
2
VCE = 5.0 V
1 0
1 2 3 4 7 10 20 30 40 60 0.1 0.2 0.3 0.5 1 2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (AMPS)

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VBE, BASE–EMITTER VOLTAGE (VOLTS)

TC = 25°C TC = 25°C
2.5 3.2
IC/IB = 10 IC/IB = 10
2.2 2.8

1.9 2.5

1.6 2.2

1.3 1.9
40°C
1.0 1.6
25°C 25°C
0.7 1.3
100°C 100°C
0.4 1.0
1 2 3 5 7 10 20 30 50 1 2 3 5 7 10 20 30 50
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage

1
0.7
r(t), EFFECTIVE TRANSIENT THERMAL

D = 0.5
0.5
RESISTANCE (NORMALIZED)

0.3 0.2
0.2
0.1 P(pk)
RθJC(t) = r(t) RθJC
0.1 RθJC = 1.17°C/W MAX
0.05
0.07 D CURVES APPLY FOR POWER
0.05 0.02 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.03 0.01 TJ(pk) – TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2
0.02 SINGLE PULSE

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 100
t, TIME (ms) 0

Figure 5. Thermal Response

Motorola Bipolar Power Transistor Device Data 3

BUT34
Table 1. Test Conditions for Dynamic Performance
VCEO(sus) RBSOA AND INDUCTIVE SWITCHING TEST CIRCUIT
for
FREE–WHEEL
+10 V
20 Ω 22 µF DIODE
1 33 D1 2N6438
2W
CONDITIONS

160 D3
5V MR854 +
INPUT

0 220 100
MM3735
680 pF 22
2 Ib1 ADJUST
D1 D2 D3 D4 1N4934
1 µF Ib2 ADJUST DRIVER VD
PULSES 680 pF 22 dTb ADJUST
PW Varied to Attain δ = 3% 2N3763 dT
IC = 100 mA D4
680 pF 100 MR854 ID
160
33
D3 2N6339
CIRCUIT
VALUES

Lcoil = 10 mH, VCC = 10 V Lcoil = 180 µH 2W 22 µF –

Rcoil = 0.7 Ω Rcoil = 0.05 Ω VCC
Vclamp = VCEO(sus) VCC = 10 V
AV
up to
INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS 50 V
t1 Adjusted to
IC Obtain IC
TEST CIRCUITS

TUT ICM tf Clamped

[ LcoilVCC(ICM)
1 Rcoil
t t1 CRONETICS
1N4937 t1 tf 510 VD
PG130
INPUT OR Lcoil
up to
[ Lcoil
EQUIVALENT (ICM)
SEE ABOVE FOR
t2 50 V 5 µs
DETAILED CONDITIONS Vclamp VCC VCE VCEM Vclamp 1% ID
Vclamp
RS = t Test Equipment
2 t2
0.1 Ω TIME Scope — Tektronix
475 or Equivalent

15 5
10 4 σ tF = 200 ns
TC = 25°C 3 IC = 16 A σ t = 400 ns
S tS
IC/IB = 5 VBE(off) = 5 V
5 2
3 10 V
2
t, TIME ( µs)

t, TIME ( µs)

1
0.5 VBE(off) = 5 V
0.5
0.3
0.3 IC = 50 A IC = 25 A
0.2 10 V IC/IB = 10
0.2
TC = 25°C
tF IC/IB = 20
0.1 0.1
1 2 3 4 5 6 7 8 9 10 1 2 3 5 7 10 20 30 50
Ib2/Ib1 IC, COLLECTOR CURRENT (AMPS)
Figure 6. Fall Time versus IB2/IB1 Figure 7. Turn–Off Time versus IC

10 10
8 8

6 IC = 25 A 6
5 5
t, TIME ( µs)

t, TIME ( µs)

4 4
IC = 25 A
3 3
IC = 50 A
2 2 IC = 50 A
TC = 25°C TC = 25°C
VBE(off) = 5 V IC/IB = 5

1 1
1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10
βf, FORCED GAIN Ib2/Ib1

Figure 8. Storage Time versus Forced Gain Figure 9. Storage Time versus Ib2/Ib1

4 Motorola Bipolar Power Transistor Device Data

 BUT34
FREE–WHEEL DIODE CHARACTERISTICS

50
I –σ +σ
di/dt = 25 A/µs
IFM

IE , EMITTER CURRENT (AMPS)

25 IRM 40

Id t
IRM 30

1 trr
0 20
VD DYN
10 (VDYN VFM)
VFM 10 TC = 25°C

TFR
0
0 1 2 3 4 5
VEC, EMITTER COLLECTOR VOLTAGE (VOLTS)
Figure 10. Free Wheel Diode Measurements Figure 11. Forward Voltage

I RM , PEAK REVERSE RECOVERY CURRENT (AMPS)

Vdyn , FORWARD MODULATION VOLTAGE (VOLTS)

30 50
TC = 25°C
25
40

20
30
15
20
10

10
5 40°C TC = 25°C

0 0
0 10 20 30 40 50 0 10 20 30 40 50
IE, EMITTER CURRENT (AMPS) IE, EMITTER CURREMT (AMPS)

Figure 12. Forward Modulation Voltage Figure 13. Peak Reverse Recovery Current

15
TRR, REVERSE RECOVERY TIME ( µs)

10
TFR , FORWARD RECOVERY TIME ( µs)

2.2 TC = 25°C TC = 25°C

7
2.0 5
1.8
3
1.6 2

1.4
0.1
1.2 0.7
1.0 0.5

0.8 0.3
0 10 20 30 40 50 0 10 20 30 40 50
IE, EMITTER CURRENT (AMPS) IE, EMITTER CURRENT (AMPS)
Figure 14. Forward Recovery Time Figure 15. Reverse Recovery Time

Motorola Bipolar Power Transistor Device Data 5

BUT34
The Safe Operating Area figures shown in Figures 16 and 17 are SAFE OPERATING AREA INFORMATION
specifed for these devices under the test conditions shown.
FORWARD BIAS
60 There are two limitations on the power handling ability of a
10 µs transistor: average junction temperature and second break-
30 DC 100 µs
IC, COLLECTOR CURRENT (AMPS)

1 ms down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,
10 i.e., the transistor must not be subject to greater dissipation
than the curves indicate.
3.0 The data of Figure 16 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
1.0

0.5
when TC y 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
0.3 voltages shown on Figure 16 may be found at any case tem-
TC = 25°C
perature by using the appropriate curve on Figure 18.
0.1 TJ(pk) may be calculated from the data in Figure 5. At high
1 5 10 30 100 300 1000 case temperatures, thermal limitations will reduce the power
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) that can be handled to values less than the limitations im-
posed by second breakdown.
Figure 16. Safe Operating Area
REVERSE BIAS
For inductive loads, high voltage and high current must be
60 sustained simultaneously during turn–off, in most cases, with
ICM , PEAK COLLECTOR CURRENT (AMPS)

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
40 accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
20
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
TC = 25°C an avalanche mode. Figure 17 gives the RBSOA character-
IC/IB = 10
istics.
VBE(off) = 5 V
0
0 200 400 600 850
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 17. Reverse Bias Safe Operating Area

100

SECOND BREAKDOWN
POWER DERATING (FACTOR)

80
DERATING

60
THERMAL
DERATING
40

20

0
0 40 80 120 160 200
IC, CASE TEMPERATURE (°C)
Figure 18. Power Derating

6 Motorola Bipolar Power Transistor Device Data

 BUT34
PACKAGE DIMENSIONS

A
N
C NOTES:
–T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE
E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D 2 PL K
INCHES MILLIMETERS
0.30 (0.012) M T Q M Y M DIM MIN MAX MIN MAX
A 1.530 REF 38.86 REF
U B 0.990 1.050 25.15 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
2 E 0.060 0.070 1.53 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
0.25 (0.010) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 197A–05
TO–204AE (TO–3)
ISSUE J

Motorola Bipolar Power Transistor Device Data 7

BUT34

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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8 Motorola Bipolar Power Transistor Device Data

*BUT34/D*
◊ BUT34/D