The University of Texas at Dallas Erik Jonsson School

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OPTICAL SOURCES AND TRANSMITTERS

Notes prepared for EE 6310

by

Professor Cyrus D. Cantrell

August–December 2003

c C. D. Cantrell (06/2003)
 The University of Texas at Dallas Erik Jonsson School
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SOURCES FOR OPTICAL COMMUNICATIONS

• Light-emitting diodes (LEDs)

Incoherent sources

Modulation bandwidth up to 100–200 MHz

Low power (∼ 10−2 mW)

Low cost
• Laser diodes

Coherent sources
◦ Oscillator = amplifier with positive feedback and enough gain to cancel
loss

Modulation bandwidth up to 25 GHz

Medium to high power (∼ 1 mW to 1 W)

Moderate to high cost

c C. D. Cantrell (07/2002)
The University of Texas at Dallas Erik Jonsson School
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FIBER AND SOURCE APPLICATIONS

Source type Fiber

multimode single-mode
LED LANs up to 622 Mb/s —
Laser LANs above 622 Mb/s Long-haul transmission

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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OPTICAL SOURCES FOR COMMUNICATIONS

Source Maximum power Modulation Bandwidth @ λ

LED −20 dBm ≤ 622 MHz 50–100 nm @ 850 nm
Edge-emitting laser
Fabry-Pérot multimode > 10 dBm > 1 GHz 3–6 nm @ 1300 nm
DFB/DBR single-mode < 3 dBm  1 GHz .05 nm @ 1550 nm
VCSEL 0 dBm > 1 GHz 0.8–5 nm @ 850 nm

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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LIGHT-EMITTING DIODES (1)

• Homojunction

Single p–n junction created by doping a single semiconductor material

Thermal equilibrium ⇒ built-in electric field and potential difference

Current increases and light is emitted when junction is forward-biased


I(V ) = Is e qV /kB T
−1

Problem: Light-emitting volume is large
◦ Poor coupling efficiency to fibers
◦ Low carrier density
• Double-heterostructure

Improve carrier confinement by sandwiching a thin layer of a different
semiconductor material between the p- and n-type cladding layers
◦ Bandgap in the thin layer < bandgap in the cladding layers
◦ Must (nearly) match lattice constants


c C. D. Cantrell (07/2002)
The University of Texas at Dallas Erik Jonsson School
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LATTICE CONSTANTS AND BANDGAP ENERGIES

G. P. Agrawal, Fiber-Optic Communication Systems, 2nd Edition, Fig. 3.6

 The University of Texas at Dallas Erik Jonsson School
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LIGHT-EMITTING DIODES (2)

• Bandgaps and emission wavelengths (at 300◦ K) of semiconductors used as

sources and detectors for optical communications

Material Bandgap, eV Nature of gap Emission wavelength (nm)

Si 1.17 indirect –
Ge 0.775 indirect –
GaAs 1.424 direct 876
InP 1.35 direct 924
InGaAs 0.75–1.24 direct 1664–1006
AlGaAs 1.42–1.92 direct 879–650
InGaAsP 0.75–1.35 direct 1664–924

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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LIGHT-EMITTING DIODES (3)

• Modulation response

Rate equation for carrier density N :
dN I N
= −
dt qv τc

τc = carrier lifetime, v = active volume

Modulation of injected current
I(t) = Ib + Ime−iωmt ⇒ N (t) = Nb + Nm(ωm)e−iωmt
τcIb τcIm/qv
Nb = , Nm(ωm) =
qv 1 − iωmτc

LED optical transfer function and 3-dB bandwidth:
√
1 2
Hoptical(ωm) = ⇒ f3 dB, optical =
1 − iωmτc 2πτc

3-dB electrical bandwidth (determined by |Hoptical(ωm)|2) is
f3 dB, electrical = 1/2πτc


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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LIGHT-EMITTING DIODES (4)

• LED structures

Edge-emitting (ELEDs)
◦ Beam divergence FWHM ∼ 30◦ in the direction perpendicular to the
plane of the p–n junction
◦ Used at 1300 and 1550 nm

Surface-emitting (SLEDs)
◦ Lambertian source with angular distribution
Direction of
radiation

Se(θ) = S0 cos θ

◦ Beam divergence FWHM ∼ 120◦

◦ Used at 850 and 1300 nm


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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LIGHT-EMITTING DIODES (5)

• LED packaging

Transistor-style header
◦ Metal cap with a transparent cover or lens
◦ Poor light-gathering efficiency

Microlens placed directly on LED

Attached-fiber
◦ Burrus SLEDs
◦ Pigtailed ELEDs
◦ Power coupled into system in Lambertian approximation:
Pin = Psource(NA)2

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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LASERs

• LASER is an acronym

Light Amplification by Stimulated Emission of Radiation

A laser is actually an oscillator
◦ LOSER was thought to be a poor acronym for attracting funding...

First lasers and their inventors: Ruby – Ted Maiman; HeNe – Ali Javan;
CO2 – Kumar Patel

In the early days of lasers, they were often called “optical masers”

MASER = Microwave Amplification by Stimulated Emission of Radiation
• Oscillator = amplifier with positive feedback and enough gain to cancel loss

In lasers, feedback is accomplished by reflection at mirrors or gratings
that enclose an amplifying medium

The physicist Arthur Schawlow thought of putting mirrors on an optical
or microwave amplifying medium to create an oscillator

Prof. Willis Lamb founded the area of theoretical and computational
analysis of lasers and laser-pulse propagation

c C. D. Cantrell (08/2002)
 The University of Texas at Dallas Erik Jonsson School
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LASERs vs. LEDs

• LEDs

Broad spectrum (covers a large range of wavelengths)

Low output power

Poor directivity

Incoherent
◦ No speckle
• LASERs

Narrow spectrum (covers a small range of wavelengths)

High output power

Good directivity

Coherent
◦ Speckle

c C. D. Cantrell (08/2002)
 The University of Texas at Dallas Erik Jonsson School
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LASERs CLASSIFIED BY MODAL PROPERTIES

• Multiple-longitudinal-mode lasers: Broad spectrum

Lasing occurs on several longitudinal (cavity) modes

850 852 854 856 858 860 862

Wavelength (nm)

Separated in frequency by c/2L

• Single-longitudinal-mode lasers: Narrow spectrum

Distributed-feedback (DFB) lasers

Distributed-Bragg-reflector (DBR) lasers

Quantum-well (QW) lasers

Vertical-cavity surface-emitting lasers (VCSELs)

c C. D. Cantrell (08/2002)
 The University of Texas at Dallas Erik Jonsson School
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SEMICONDUCTOR LASERS FOR COMMUNICATIONS

• Edge-emitting lasers

Fabry-Pérot (CD-type) lasers
◦ Feedback occurs through reflection at the end surfaces
◦ Each Fabry-Pérot mode has a unique wavelength λ, such that
2ncL = mλ for some integer m
where nc is the refractive index of the laser medium
◦ More than one Fabry-Pérot mode lies under the gain curve

Distributed-feedback (DFB) lasers
◦ Feedback occurs through Bragg reflection from gratings
• Vertical-cavity surface-emitting lasers (VCSELs)

Feedback occurs through reflection from multilayer mirrors

Modes are widely spaced ⇒ usually only one mode under the gain curve

c C. D. Cantrell (08/2002)
The University of Texas at Dallas Erik Jonsson School
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STRIPE-GEOMETRY FABRY-PEROT DIODE LASER

H. Flicker, LASL 76-1933, Los Alamos National Laboratory, 1976

 The University of Texas at Dallas Erik Jonsson School
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EDGE-EMITTING, RIB-GUIDED DIODE LASER

100 µm
Metal electrode
10 µm
Proton- 1 µm
p+ GaAs
bombarded { p GaAlAs
region GaAlAs active region
Emitting n GaAlAs
area n GaAs substrate
200 µm

c C. D. Cantrell (02/2002)
The University of Texas at Dallas Erik Jonsson School
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VERTICAL-CAVITY SURFACE-EMITTING LASER

p-Contact
p-Mirror Stack
Proton Implant
Active Region

n-Mirror Stack

GaAs Substrate

VCSEL Chip Structure

01/2001
The University of Texas at Dallas Erik Jonsson School
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ARRAY OF VCSELs

Optical Engineering, Vol. 29, No. 3, March 1990

 The University of Texas at Dallas Erik Jonsson School
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EMISSION AND ABSORPTION OF LIGHT (1)

|1〉
Rabs Rspont Rstim
|0〉

• Consider an idealized atomic or molecular system with only two energy levels
E0 (ground state) and E1 (excited state) that interact significantly with light
at the frequency
ω = (E1 − E0)/

• The rate at which photons are absorbed, per unit volume, is
Rabs = B N0ρph(ω)
where N0 is the number of ground-state atoms per unit volume, and ρph(ω)
is the power spectral density of the light at frequency ω

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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EMISSION AND ABSORPTION OF LIGHT (2)

|1〉
Rabs Rspont Rstim
|0〉

• Einstein discovered that there are two kinds of processes by which light is
emitted:

Spontaneous emission (happens in the dark)
Rspont = AN1
where N1 is the number of excited-state atoms per unit volume, and A is
the spontaneous emission rate per atom (units: s−1)

Stimulated emission (happens only when other photons are present)
Rstim = BN1ρph(ω)

A and B are called the Einstein coefficients

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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EMISSION AND ABSORPTION OF LIGHT (3)

• In thermal equilibrium, the ratio of the excited-state to the ground-state

population is given by the Boltzmann distribution,
N1
= e−
ω/kB T
N0

Since there’s no net population change in equilibrium, the “down” rate
equals the “up” rate:
AN1 + BN1ρph(ω) = B N0ρph(ω)

The optical power spectral density must equal the Planck black-body
spectral density,
A/B 8πhν 3/c3
ρph(ω) =  =
(B /B)e
ω/kB T − 1 e
ω/kB T − 1
where ν = ω/2π is the circular frequency (in Hz)

Then
A = (8πhν 3/c3)B and B = B


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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EMISSION AND ABSORPTION OF LIGHT (4)

• Stimulated emission produces gain

Rate at which new photons are emitted ∝ power spectral density of
existing photons

Ratio of gain to loss is Rstim/Rabs = N1/N0

Net amplification and oscillation (laser action) require a population
inversion (N1 > N0) and are not possible in thermal equilibrium
◦ Must pump excited-state population with an external energy source
• Spontaneous emission depletes the excited state and acts as a noise source
• Ratio of stimulated to spontaneous emission rates in thermal equilibrium:
Rstim 1
=
ω/k T
Rspont e B −1

Spontaneous emission dominates when the photon energy,
ω, is much

larger than the thermal energy, kB T
◦ For communications at λ = 1550 nm,
ω ≈ 1 eV  kB T ≈ 25 meV


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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TECHNIQUES FOR POPULATION INVERSION (1)

|1〉
pump ω
|0〉

• Brute-force inversion with respect to the ground (lowest-energy) state

Impractical for many gas or solid-state lasers because of rapid excited-
state decay, which populates the ground state and leads to a requirement
for a very high pump rate

Practical for rare-earth ions because of a long excited-state lifetime

Practical in a semiconductor if current is injected across a p − n junction

Practical in rare-gas-halide lasers, because the ground state of KrF (for
example) is unbound (the atoms fly apart)

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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TECHNIQUES FOR POPULATION INVERSION (2)

|u〉
Γ1
|1〉
pump ω
|0〉

• Three-level pumping scheme

Invented by Nicolaas Bloembergen for solid-state masers

Basic idea is to gather energy in an easily pumped upper level |u (or set
of levels) and funnel it rapidly to the upper laser level, |1

Laser examples include ruby, erbium-doped fiber amplifiers (EDFAs) and
nuclear-explosion-pumped “lasers”

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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TECHNIQUES FOR POPULATION INVERSION (3)

|u〉
Γ1
|1〉
pump ω
|0〉
Γ0
|g〉

• Four-level pumping scheme

Basic ideas:
◦ Gather energy in an easily pumped upper level |u (or set of levels) and
funnel it rapidly to the upper laser level, |1
◦ The lower state of the laser transition, |0, decays so rapidly that very
little population accumulates in it

Required pumping rate is much lower than for the three-level scheme, in
most cases

Mechanism of many well-known lasers, including He-Ne and CO2


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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CONDITION FOR LASER OSCILLATION

• Optical electric field amplitude after n round trips in the laser cavity:
An(ω) = ρ1ρ2e2[−jβ(ω)+g(ω)−α]LAn−1(ω)
ρ1, ρ2 = amplitude reflection coefficients at end mirrors
L = cavity length, α = attenuation coefficient

Condition for oscillation: Gain ≥ loss
1 1
g(ω) ≥ α + ln
2L |ρ1ρ2|

Equality holds at laser threshold

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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CONDITION FOR CONSTRUCTIVE INTERFERENCE

• Constructive interference of An, An−1, ... , occurs when the cavity length is
an integral number of half-wavelengths:
mλ
2β(ω)L = 2mπ ⇒ L =
2n(ω)

For each value of m, there is a longitudinal mode of the laser cavity

Frequency spacing between adjacent longitudinal modes is
c
∆f =
2n(ω)L

c C. D. Cantrell (07/2002)
The University of Texas at Dallas Erik Jonsson School
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TUNING BEHAVIOR OF A DIODE LASER

H. Flicker, LASL 76-1930, Los Alamos National Laboratory, 1976

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DIODE LASER RATE EQUATIONS (1)

dP  P
= GP + Rspont −
dt τP
dN I N
= − − GP
dt q τc
• P = number of photons in active volume, V
• N = number of carrier-band electrons in active volume, V
• G = net rate of stimulated emission = γvg σg (N − N0)/V
 N0 = number of electrons at laser threshold
 vg = group velocity of light in active region
 γ = confinement factor
 σg = stimulated-emission cross section
• τc = carrier lifetime (due to all non-stimulated recombination processes)
• τP = photon lifetime; τP−1 = vg αcavity = vg (αfacet + αmedium)


c C. D. Cantrell (10/2002)
 The University of Texas at Dallas Erik Jonsson School
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DIODE LASER RATE EQUATIONS (2)

dP  P
= GP + Rspont −
dt τP
dN I N
= − − GP
dt q τc
• Photon terms:

GP = rate of creation of photons through stimulated emission


Rspont = nspontG = spontaneous emission rate (nspont ∼ 2)

P/τP = rate of loss of photons on mirrors and in medium
• Electron terms:

I/q = rate of injection of electrons into active region

N/τc = rate of loss of electrons through spontaneous emission (radiative
recombination) and non-radiative recombination (defects, surface, Auger)

GP = rate of loss of electrons through stimulated emission

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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DIODE LASER RESPONSE TO SINUSOIDAL MODULATION

• Current = I(t) = Ib + Im sin(ωmt)

Ib = bias current
• Linearized photon and electron populations:
P (t) = Pb + |pm| sin(ωmt + θm)
N (t) = Nb + |nm| sin(ωmt + ψm)
Pb(γσg vg /V )(Im/q)
pm = |pm|e =
iθm
(ΩR + ωm − iΓR )(ΩR − ωm + iΓR )

ΩR = frequency of relaxation oscillations
 1/2
ΩR = Gb(γσg vg /V )Pb − (ΓP − ΓN ) /42


ΓP = Rspont /Pb+NLGbPb, ΓN = τc−1+(γσg vg /V )Pb, ΓR = 12 (ΓP +ΓN )

ΓR = damping rate of relaxation oscillations

NL accounts for carrier heating, two-photon absorption, and hole burning


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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RELAXATION OSCILLATIONS

• From
dN I N
= − − GP (1)
dt q τc
one learns that increasing the current increases the electron population, N ,
and therefore increases the gain, G
• From
dP  P
= GP + Rspont − (2)
dt τP
one learns that increasing the gain increases the photon population, P
• From (1) one sees that increasing the photon population decreases the
electron population, and therefore decreases the gain
 From (2) one sees that this decreases the photon population
 The result is a damped oscillation in N and P
 For optical communications, relaxation oscillations increase the relative
intensity noise (RIN) of the laser


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School
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MODULATION AND MODULATORS

• Common optical modulation formats (illustrated on next slide):

NRZ (non-return-to-zero)

RZ (return-to-zero)

NRZI (non-return-to-zero-inverted)
• There’s no unique best modulation format

RZ requires up to twice the bandwidth of NRZ, but can improve receiver
sensitivity and provide some improvement in clock recovery

“Best” can depend on fiber type, data rate, transmission distance, and
other parameters
• Modulation techniques:

Direct (i.e., modulating the light by modulating the laser drive current)

External (i.e., modulating the light after it leaves the laser)

c C. D. Cantrell (08/2002)
The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

NRZ, RZ AND NRZI MODULATION

Bits 0 0 1 0 1 1 1 1 0 1 0 0 0 0 1 0

NRZ

RZ

NRZI

c C. D. Cantrell (09/2002)
 The University of Texas at Dallas Erik Jonsson School
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RAISED-COSINE PULSE SHAPE

• Used in RZ modulation to avoid intersymbol interference (ISI)

No energy in the transmitted pulse is outside of the bit slot
• Pulse shape:


0 if t ∈
/ [−T /2, T /2]


R(t) = 2πt
 1
 2 1 + cos if t ∈ [−T /2, T /2]
T
• Real transmitters only approximate a raised-cosine pulse

The extinction ratio is the ratio of the peak power in a “0” bit to the
minimum power in a “1” bit
P0
rex =
P1
• Dispersion in real fibers broadens pulses

The raised-cosine pulse has to be zero during guard intervals at the
beginning and end of the bit slot


c C. D. Cantrell (09/2002)
 The University of Texas at Dallas Erik Jonsson School
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EXPERIMENTAL MODULATION FORMATS

• Special modulation formats have been developed to counteract common

signal impairments, or to increase the data rate for a given baud rate

CRZ (chirped-return-to-zero)
◦ Intended to cancel dispersion
◦ Requires a highly complex modulator
◦ Electric-field waveform of a single RZ pulse:1

π   
1 1
E(t) = A cos sin(πBt) exp [jM π cos (2πBt)] , t∈ − ,
2 2B 2B

OptiMight format2
◦ Intended to cancel self-phase modulation

Pulse amplitude modulation (multi-level signaling)

1 E. A. Golovchenko, A. N. Pillpetskii and N. S. Bergano, Optical Fiber Communication Conference, Volume 4, pp. 38–40 (2000)
2 Yu Sheng Bai, U. S. Patent Application 2002/36812 A1 (2002)

c C. D. Cantrell (10/2002)
 The University of Texas at Dallas Erik Jonsson School
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DIRECT MODULATION

• Laser output is modulated by directly modulating the laser drive current:

I(t) = Ib + Imfp(t)

Ib = bias current
◦ Set slightly above threshold ⇒ laser is never completely turned off
◦ Extinction ratio = ratio of power in “0” bits to power in “1” bits

Imfp(t) = drive current

fp(t) = modulation waveform
• The charge-carrier density changes during a directly modulated pulse

Refractive index depends on carrier density ⇒ phase and amplitude
change during a pulse

Time-dependent phase change ⇒ frequency change, a.k.a. chirp

Frequency shifts to higher values on the leading edge of a pulse and to
lower values on the trailing edge

c C. D. Cantrell (09/2002)
The University of Texas at Dallas Erik Jonsson School
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PULSES PRODUCED BY DIRECT MODULATION

S. W. Hinch and Christopher M. Miller, Fiber Optic Test and Measurement, Dennis Derickson, Editor, Fig. 8.13
The University of Texas at Dallas Erik Jonsson School
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CHIRP IN DIRECTLY MODULATED LASER PULSES

G. P. Agrawal and N. K. Dutta, Semiconductor Lasers

 The University of Texas at Dallas Erik Jonsson School
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LIMITATIONS & ADVANTAGES OF DIRECT MODULATION

• Frequency chirp in direct modulation causes broadening of the spectrum of

the light produced by the transmitter

Depending on the sign of the chirp (high-to-low chirp or low-to-high chirp)
and the sign of the group-velocity dispersion of the fiber, a chirped pulse
may broaden faster than an unchirped pulse, or compress (become
narrower) instead of broadening
◦ Even if pulses become narrower for some propagation distance, they
broaden rapidly beyond a certain critical distance that depends on the
rate of chirp and the value of the group-velocity-dispersion, D

The requirement that the modulation frequency must be lower than the
relaxation-oscillation frequency limits the bit rate in commercial directly
modulated semiconductor lasers to ≤ 2.5 Gb/s
• Nevertheless, directly modulated lasers still have the lowest cost

Important for 10 Gb Ethernet applications

c C. D. Cantrell (09/2002)
 The University of Texas at Dallas Erik Jonsson School
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DIRECTLY MODULATED VCSELs

• VCSELs have a higher relaxation-oscillation frequency than edge-emitting

lasers

Modulation frequencies of 2.5 Gb/s at λ = 850 nm are commercially
available

Modulation at 12.5 Gb/s at λ = 850 nm has been reported

Work is progressing towards VCSELs at 1310 nm and 1550 nm
• Other benefits of VCSELs include small size, on-wafer testing, much lower
cost than edge-emitting lasers, and low power consumption

c C. D. Cantrell (09/2002)
 The University of Texas at Dallas Erik Jonsson School
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EXTERNAL MODULATION

• Advantages of external modulation:

External modulators can be operated at much higher frequencies than
directly modulated lasers
◦ The laser operates CW (continuously)
◦ The modulation frequency is not limited by the laser’s relaxation-oscillation
frequency
• Types of commercially available external modulators:

Mach-Zehnder electro-optic modulators using waveguides that have been
laid down in LiNbO3

Semiconductor-based electroabsorption modulators

c C. D. Cantrell (09/2002)
 The University of Texas at Dallas Erik Jonsson School
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MACH-ZEHNDER EXTERNAL MODULATORS (1)

• Entering light is split and propagates through both arms of a Mach-Zehnder

interferometer

A voltage applied at the contacts changes the refractive index of one or
both arms, producing a phase difference when the beams are recombined

If the phase difference is π, then no light is output

G. P. Agrawal, Fiber-Optic Communication Systems, 2nd Edition, Fig. 6.3

 The University of Texas at Dallas Erik Jonsson School
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MACH-ZEHNDER EXTERNAL MODULATORS (2)

• Agere external MZI modulators (approximately actual size)

Agere data sheets

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MACH-ZEHNDER EXTERNAL MODULATORS (3)

• Advantages:

Possibility of integrating multiple functions such as an attenuator or dual-
stage RZ modulator

Can be designed or controlled to provide a desired amount of chirp (in-
cluding zero)

Capable of high modulation rates (up to 40 Gb/s commercially)
• Disadvantages:

Polarization sensitivity

Requirement for large drive voltage (5–7 V)

Large footprint (3–5 in., depending on integration)

Requirement for support components such as modulator drivers and DC
bias supply ⇒ high cost

c C. D. Cantrell (09/2002)
The University of Texas at Dallas Erik Jonsson School
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MACH-ZEHNDER DRIVE CIRCUIT

Agere data sheets

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ELECTROABSORPTION EXTERNAL MODULATORS (1)

• Light is absorbed by creation of electron-hole pairs

An applied voltage shifts the bandgap and the absorption spectrum

G. P. Agrawal, Fiber-Optic Communication Systems, 2nd Edition, Fig. 6.3

 The University of Texas at Dallas Erik Jonsson School
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ELECTROABSORPTION EXTERNAL MODULATORS (2)

• Alcatel Optronics EA-modulated laser

Alcatel Optronics
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ELECTROABSORPTION EXTERNAL MODULATORS (3)

• Advantages:

Possibility of integrating the laser and modulator on the same chip
⇒ small size

Small chirp or negative chirp is available

Capable of high modulation rates (up to 10 Gb/s commercially and 40
Gb/s in research)

Smaller drive voltage than MZI modulators in LiNbO3
• Disadvantages:

There is a small carrier-density-change-induced chirp

Ultimate limit of modulation rate may be lower than in LiNbO3

c C. D. Cantrell (09/2002)
 The University of Texas at Dallas Erik Jonsson School
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COMPARISON OF MODULATOR COSTS

Modulator Type Approximate Cost

2.5 Gb/s direct modulation $500–$1000
2.5 Gb/s MZI modulator $1500–$20001
10 Gb/s MZI RZ/NRZ modulator $5000–$60001
10 Gb/s EA-modulated laser $1500–$2500

1 Does not include support components Courtesy of Paul Krizan

 Data Sheet, Rev. 2
July 2001

Wavelength-Selected High-Power D2587P-Type (with

Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules

Applications
■ Telecommunications:
— Dense WDM
— SONET/SDH OC-192/STM-64
— Extended and ultralong reach
— Undersea systems
■ Digital video

Description
The D2587P-Type DFB laser module is designed for
use with an external lithium niobate modulator and
Featuring wavelength selection and locking capabilities, the also in applications where high power (20 mW) is
D2587P Laser Module is ideally suited for use with external required.
lithium niobate modulators, and in high-power (20 mW) appli-
cations. The use of an internal wavelength locker greatly
enhances long-term reliability and reduces chirp and
mode dispersion when used in conjunction with LN
Features modulators at OC-192 data rates.
A companion device, the D2547P high-power DFB
■ High-performance, multiquantum-well (MQW), laser module, is also designed for use with a lithium
distributed-feedback (DFB) laser niobate external modulator, but without the use of an
■ D2587P-Type is offered on 50 GHz ITU grid internal wavelength locker.
wavelengths ranging from 1528.77 nm—
1610.06 nm
■ D2547P-Type is offered on 100 GHz ITU grid
wavelengths ranging from 1528.77 nm—
1610.06 nm
■ Polarization-maintaining fiber pigtail
■ For use with lithium niobate modulators
■ High optical power (20 mW, CW)
■ Hermetic, 14-pin package
Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

Description (continued) Agere Systems’ optoelectronic components are being qual-

ified to rigorous internal standards that are consistent with
Telcordia Technologies † TR-NWT-000468. All design and
Principles of Operation (Controlled Wave- manufacturing operations are ISO § 9001 certified. The
length) module is being fully qualified for central office applications.

The single-channel, wavelength-selected DFB (ILM) pack- * Fujikura is a registered trademark of Fujikura Ltd.
age contains internal wavelength-discriminating optics, i.e., † Telcordia Technologies is a trademark of Telcordia Technologies
Inc.
two etalons and associated photodiodes. The output con-
§ ISO is a registered trademark of The International Organization for
sists of analog signals suitable for controlling the electrical
Standardization.
current of the thermoelectric cooler (TEC) and the DFB
laser.

CORE
Controlled Feedback
STRESS ROD

The module contains an internal optical isolator that sup-

PRINCIPLE POLARIZATION
presses optical feedback in laser-based, fiber-optic sys- AXIS
tems. Light reflected back to the laser is attenuated a CLADDING
minimum of 30 dB.
INNER COATING
(SILICON & ACRYLATE)
OUTER COATING
Controlled Temperature
1-771(C).a

An integral TEC provides stable thermal characteristics.

The TEC allows for heating and cooling of the laser chip to
Figure 1. Polarization-Maintaining Fiber
maintain a temperature of 25 °C for case temperatures from
–25 °C to +70 °C. The laser temperature is monitored by
the internal thermistor, which can be used with external cir- Pin Information
cuitry to control the laser chip temperature.
Table 1. Pin Descriptions

Controlled Power Pin D2587P-Type D2547P-Type

1 Thermistor Thermistor
An internal, InGaAs, PIN photodiode functions as the back- 2 Thermistor Thermistor
facet monitor. The photodiode monitors emission from the
rear facet of the laser and, when used in conjunction with 3 Laser dc Bias Laser dc Bias
control circuitry, can control optical power launched into the (Cathode) (–) (Cathode) (–)
fiber. Normally, this configuration is used in a feedback 4 Back-facet Monitor Back-facet Monitor
arrangement to maintain consistent laser output power. Anode (–) Anode (–)
5 Back-facet Monitor Back-facet Monitor
Cathode (+) Cathode (+)
Standard Package
6 TEC (+)1 TEC (+)1
The laser module is fabricated in a 14-pin, hermetic, metal/ 7 TEC (–)1 TEC (–)1
ceramic butterfly package that incorporates a bias tee that 8 Case Ground Case Ground
separates the dc-bias path from the RF input. The RF input 9 λ Photodiode 2 Anode Case Ground
has a nominal 25 Ω impedance.
10 λ Photodiode 1 Anode Case Ground
The laser module is equipped with Fujikura* polarization-
11 Laser Anode (+) 2 Laser Anode (+) 2
maintaining fiber (PMF). The fiber is PANDA type and is the
same fiber that is used on the Agere Systems Inc. lithium 12 RF Laser Input RF Laser Input
niobate modulators. It has a mode field diameter of Cathode (–) Cathode (–)
10.5 µm, a cladding diameter of 125 µm ±3 µm, and a 13 Laser Anode (+) 2 Laser Anode (+) 2
loose tube jacketed fiber 900 µm in diameter. Figure 1 14 NC Case Ground
shows the orientation of polarization in the fiber.
1. A positive current through the thermoelectric heat pump cools the
laser.
2. Both leads should be grounded for optimum performance.

2 Agere Systems Inc.

Data Sheet, Rev. 2 Wavelength-Selected, High-Power D2587P-Type (with Wavelength
July 2001 Locker)/D2547P-Type Isolated DFB Laser Modules

Description (continued)

7 6 5 4 3 2 1
– + + – –

L1 TH
140 nH
TEC 10 kΩ

ISOLATOR
R1
PACKAGE 20 Ω
GROUNDS
NC
+ – +
8 9 10 11 12 13 14
1-567
Top view.

Figure 2. D2547P Circuit Schematic

7 6 5 4 3 2 1

TEC RTH
RFC

PDPOWER
PM FIBER PIGTAIL
PDWAVE PDWAVE
LD RRF

8 9 10 11 12 13 14

1-1130(F)

Figure 3. D2587P Circuit Schematic

Block Diagram
LASER MODULE

DUAL ISOLATOR AND

ETALON FIBER COUPLING
DFB OPTICS

SILICON SUBMOUNT

THERMISTOR THERMOELECTRIC COOLER

SUGGESTED
ELECTRONICS MODULE (CUSTOMER SUPPLIED)
A TO D EEPROM
CONVERTER

VOLTAGE PROPORTIONAL TO WAVELENGTH

D TO A
MICROPROCESSOR CONVERTER VOLTAGE PROPORTIONAL TO OPTICAL POWER
VOLTAGE PROPORTIONAL TO TEMPERATURE

1-1129(F)

Agere Systems Inc. 3

Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.

Parameter Symbol Min Max Unit

Laser Reverse Voltage VRLMAX — 2 V
dc Forward Current IFLMAX — 225 mA
Operating Case Temperature Range TC –25 70 °C
Storage Case Temperature Range* Tstg –40 70 °C
Photodiode Reverse Voltage VRPDMAX — 10 V
Photodiode Forward Current IFPDMAX — 2 mA
* Does not apply to shipping container.

Handling Precautions Mounting Instructions

Power Sequencing The minimum fiber bend radius is 1.0 in. (25.4 mm)
To avoid degradation in performance, mount the mod-
To avoid the possibility of damage to the laser module ule on the board as follows:
from power supply switching transients, follow this
turn-on sequence: 1. Place the bottom flange of the module on a flat heat
sink at least 0.5 in. x 1.180 in. (12.7 mm x 30 mm) in
1. All ground connections size. The surface finish of the heat sink should be
2. Most negative supply better than 32 µin. (0.8 µm), and the surface flatness
must be better than 0.001 in. (25.4 µm). Using ther-
3. Most positive supply mal conductive grease is optional; however, thermal
4. All remaining connections performance can be improved by up to 5% if conduc-
tive grease is applied between the bottom flange and
Reverse the order for the proper turn-off sequence. the heat sink.
2. Mount four #2-56 screws with Fillister heads
Electrostatic Discharge (M2-3 mm) at the four screw hole locations (see Out-
line Diagram). The Fillister head diameter must not
CAUTION: This device is susceptible to damage as exceed 0.140 in. (3.55 mm). Do not apply more than
a result of electrostatic discharge. Take 1 in.-lb. of torque to the screws.
proper precautions during both han-
dling and testing. Follow guidelines 0.118
0.062 (1.58)
(3.00)
such as JEDEC Publication No. 108-A
(Dec. 1988). 0.086
0.031 (0.79)
(2.18)
Agere Systems employs a human-body model (HBM)
for ESD-susceptibility testing and protection-design 0.140
(3.56)
evaluation. ESD voltage thresholds are dependent on
the critical parameters used to define the model. A 0.129 (3.28) R
standard HBM (resistance = 1.5 kΩ, capacitance = 100
pF) is widely used and, therefore, can be used for com- 0.041 (1.04)
parison purposes. The HBM ESD threshold presented
here was obtained using these circuit parameters: Note: Dimensions are in inches and (millimeters).
1-532(C)

Parameter Value Unit

Figure 4. Fillister Head Screw
Human-body Model >400 V

4 Agere Systems Inc.

Data Sheet, Rev. 2 Wavelength-Selected, High-Power D2587P-Type (with Wavelength
July 2001 Locker)/D2547P-Type Isolated DFB Laser Modules

Characteristics
Minimum and maximum values are testing requirements. Typical values are device characteristics and are results
of engineering evaluations; they are for information purposes only and are not part of the testing requirements.

Table 2. D2587-Type Electrical Characteristics (at 25 °C laser temperature)

Parameter Symbol Test Conditions Min Typ Max Unit

Threshold Current ITH — — 15 40 mA
Drive Current — LF = 20 mW — — 165 mA
Laser Forward Voltage VLF LF = 20 mW (CW) — 2 2.5 V
Monitor Reverse-bias Voltage* VRMON — 3 5 10 V
Monitor Current: PO = 20 mW (CW)
Back-facet Monitor IRMON 0.003 — 0.06 mA
λ Photodiode 1 IλPD1 0.003 — 0.06 mA
λ Photodiode 2 IλPD2 0.003 — 0.06 mA
Monitor Dark Current ID IF = 0, VRMON = 5 V — 0.01 0.1 µA
Input Impedance ZIN — — 25 — Ω
Filter Slope — — 0.5 — 8 /nm
Frequency Capture Range — Measured from λITU 15 — — GHz
toward increasing λ and
decreasing λ
Thermistor Current ITC — 10 — 100 µA
Resistance Ratio† — — 9.1 9.6 10.1 —
Thermistor Resistance RTH TL = 25 °C 9.5 — 10.5 kΩ
Laser Submount Temperature TSET — 20 — 35 °C
TEC Current ITEC TL = 25 °C, TC = 70 °C — — 1.7 A
TEC Voltage VTEC TL = 25 °C, TC = 70 °C — — 2.8 V
TEC Capacity ∆T TC = 70 °C — 50 °C
* Standard operating condition is 5.0 V reverse bias.
† Ratio of thermistor resistance at 0 °C to thermistor resistance at 50 °C.

Table 3. D2587-Type Optical Characteristics (at 25 °C laser temperature)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Optical Output Power PP — 20.0 — — mW
Center Wavelength* λC TL = TSET 1528.77 — 1610.06 nm
(See Ordering Information, page 9.) λC = λITU ± 0.1 nm
Line Width (3 dB full width) ∆λ CW, PF = 20.0 mW — 2 10 MHz
Side-mode Suppression Ratio SMSR CW 35 45 — dB
Relative Intensity Noise RIN CW, PF = 20 mW — — –135 dB/Hz
200 MHz < f < 10 GHz
Optical Isolation — TC = 0 °C to 75 °C 30 — — dB
†
Optical Polarization Extinction Ratio — 0 °C to 75 °C 20 — — dB
FM Efficiency FM fMOD = 30 kHz, — 100 — MHz/mA
PF = 20 mW
Wavelength Drift (EOL) ∆λC Tested over — — ±2.5 GHz
25-year lifetime
* Custom wavelengths available.
† The ST ® ferrule key is not aligned to slow axis of fiber. Connector is intended for testing purposes only.

Agere Systems Inc. 5

Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

Characteristics (continued)
Minimum and maximum values are testing requirements. Typical values are device characteristics and are results
of engineering evaluations; they are for information purposes only and are not part of the testing requirements.

Table 4. D2547P-Type Electrical Characteristics (at 25 °C laser temperature)

Parameter Symbol Test Conditions Min Typ Max Unit

Threshold Current ITH — — 15 40 mA
Drive Current — LF = 20 mW — — 165 mA
Laser Forward Voltage VLF LF = 20 mW (CW) — 2 2.5 V
Monitor Reverse-bias Voltage* VRMON — 3 5 10 V
Back-facet Monitor Current: IRMON PO = 20 mW (CW) 0.2 — — mA
Monitor Dark Current ID IF = 0, VRMON = 5 V — 0.01 0.1 µA
Input Impedance ZIN — — 25 — Ω
Thermistor Current ITC — 10 — 100 µA
†
Resistance Ratio — — 9.1 9.6 10.1 —
Thermistor Resistance RTH TL = 25 °C 9.5 — 10.5 kΩ
Laser Submount Temperature TLASER — 20 — 35 °C
TEC Current ITEC TL = 25 °C, TC = 70 °C — — 1.7 A
TEC Voltage VTEC TL = 25 °C, TC = 70 °C — — 2.8 V
TEC Capacity ∆T TC = 70 °C — — 50 °C
* Standard operating condition is 5.0 V reverse bias.
† Ratio of thermistor resistance at 0 °C to thermistor resistance at 50 °C.

Table 5. D2547P-Type Optical Characteristics (at 25 °C laser temperature)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Optical Output Power PP — 20.0 — — mW
Center Wavelength* λC TL = TSET 1528.77 — 1610.06 nm
(See Ordering Information, λC = λITU ± 0.1 nm
page 12.)
Line Width (3 dB full width) ∆λ CW, PF = 20.0 mW — 2 10 MHz
Side-mode Suppression Ratio SMSR CW 35 45 — dB
Relative Intensity Noise RIN CW, PF = 20 mW — — –135 dB/Hz
200 MHz < f < 10 GHz
Optical Isolation — TC = 0 °C to 75 °C 30 — — dB
Optical Polarization Extinction — 0 °C to 75 °C 20 — — dB
Ratio†
FM Efficiency FM fMOD = 30 kHz, — 100 — MHz/mA
PF = 20 mW
Wavelength Drift (EOL) ∆λC Tested over — — ±0.1 nm
25-year lifetime
* Custom wavelengths available.
† The ST ferrule key is not aligned to slow axis of fiber. Connector is intended for testing purposes only.

6 Agere Systems Inc.

Data Sheet, Rev. 2 Wavelength-Selected, High-Power D2587P-Type (with Wavelength
July 2001 Locker)/D2547P-Type Isolated DFB Laser Modules

Characteristics (continued)
Table 6. D2587P/D2547P Fiber Pigtail and Optical Connector Characteristics
Parameter Symbol Description Min Typ Max Unit
Pigtail Length L Fujikura PANDA or equivalent 1.5 — — m
polarization-maintaining fiber
Connector Style — ST plug (FC/PC optional) — — — —

Outline Diagram
Dimensions are in inches and (millimeters). Tolerances are ±0.005 in. (±0.127 mm).

1.025 (26.04)
PIN 1
0.500 (12.70) 0.10 ± 0.002
MIN 0.020 (0.51) TYP (2.54 ± 0.051)

TRADEMARK, CODE, LASER SERIAL NUMBER,

AND DATE CODE IN APPROX. AREA SHOWN

STRAIN
RELIEF
0.036
(0.91)
0.500 ~
(12.70)
0.200
0.605 0.350
(15.37) (5.08)
(8.89)
MAX

0.078 (1.98)
0.105 (2.67) DIA
TYP (4) PLACES
PIN 14

0.213 (5.40) TYP

0.100 (2.54) TYP

59.06 (1500.00)
MIN
2.03 (51.6)

0.180 (4.56) 0.820 (20.83) 0.863 (21.91)

0.700 (17.78) 0.575 (14.61) 0.260 (6.60)

0.10
(2.5)

0.056 (1.42)
0.365
(9.27)
MAX

0.215
1.180 (29.97) 0.030 (0.75) (5.47)
HEAT SINK REF

0.215 (5.45)

1-520.h

Agere Systems Inc. 7

Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

High-Power Product
Class IIIb Laser Product

FDA/CDRH Class IIIb laser product. All versions are Class IIIb laser products per CDRH, 21 CFR 1040 Laser
Safety requirements. The device has been classified with the FDA under accession number 8720010.
This product complies with 21 CFR 1040.10 and 1040.11.
8 µm/125 µm ±3 µm single-mode fiber with 900 µm loose-tube jacketed fiber and connector
Wavelength = 1.5 µm
Maximum power = 40 mW
Because of size constraints, laser safety labeling (including an FDA Class IIIb label) is not affixed to the module but
attached to the outside of the shipping carton.
Product is not shipped with power supply.
Caution: Use of controls, adjustments, and procedures other than those specified herein may result in
hazardous laser radiation exposure.

DANGER
INVISIBLE LASER RADIATION
IS EMITTED FROM THE END
OF FIBER OR CONNECTOR
Avoid direct exposure to beam
Do not view beam directly with
optical instruments

INVISIBLE LASER RADIATION EMITTED FROM END OF FIBER OR CONNECTOR

Avoid exposure to beam
Class IIIb Laser Product FDA/CDRH, 21 CFR 1040 Max. Output: 40 mW Wavelength: 1.5 µm

8 Agere Systems Inc.

Data Sheet, Rev. 2 Wavelength-Selected, High-Power D2587P-Type (with Wavelength
July 2001 Locker)/D2547P-Type Isolated DFB Laser Modules

Ordering Information
Table 7. D2587P 20 mW CW Laser with Locker (C- and L-Band) Ordering Information (continued)

Device ITU-T Center Comcode Device ITU-T Center

Comcode
Code Frequency Wavelength Code Frequency Wavelength
(THz) (nm) (THz) (nm)
D2587P61 196.1 1528.77 108835422 D2587P41 194.1 1544.53 108835620
D2587P605 196.05 1529.16 108875220 D2587P405 194.05 1544.92 108875444
D2587P60 196.0 1529.55 108835430 D2587P40 194.0 1545.32 108835638
D2587P595 195.95 1529.94 108875238 D2587P395 193.95 1545.72 108875451
D2587P59 195.9 1530.33 108835448 D2587P39 193.9 1546.12 108835646
D2587P585 195.85 1530.72 108875246 D2587P385 193.85 1546.52 108875469
D2587P58 195.8 1531.12 108835455 D2587P38 193.8 1546.92 108835653
D2587P575 195.75 1531.51 108875253 D2587P375 193.75 1547.32 108875477
D2587P57 195.7 1531.90 108835463 D2587P37 193.7 1547.72 108835661
D2587P565 195.65 1532.29 108875261 D2587P365 193.65 1548.11 108875485
D2587P56 195.6 1532.68 108835471 D2587P36 193.6 1548.51 108835679
D2587P555 195.55 1533.07 108875279 D2587P355 193.55 1548.91 108875493
D2587P55 195.5 1533.47 108835489 D2587P35 193.5 1549.32 108835687
D2587P545 195.45 1533.86 108875287 D2587P345 193.45 1549.72 108875501
D2587P54 195.4 1534.25 108835497 D2587P34 193.4 1550.12 108835695
D2587P535 195.35 1534.64 108875303 D2587P335 193.35 1550.52 108875519
D2587P53 195.3 1535.04 108835505 D2587P33 193.3 1550.92 108835703
D2587P525 195.25 1535.43 108875311 D2587P325 193.25 1551.58 108875527
D2587P52 195.2 1535.82 108835513 D2587P32 193.2 1551.72 108835711
D2587P515 195.15 1536.22 108875329 D2587P315 193.15 1552.12 108875535
D2587P51 195.1 1536.61 108835521 D2587P31 193.1 1552.52 108835729
D2587P505 195.05 1537.00 108875345 D2587P305 193.05 1552.93 108875543
D2587P50 195.0 1537.40 108835539 D2587P30 193.0 1553.33 108835737
D2587P495 194.95 1537.79 108875352 D2587P295 192.95 1553.73 108875550
D2587P49 194.9 1538.19 108835547 D2587P29 192.9 1554.13 108835745
D2587P485 194.85 1538.58 108875360 D2587P285 192.85 1554.54 108875568
D2587P48 194.8 1538.98 108835554 D2587P28 192.8 1554.94 108835752
D2587P475 194.75 1539.37 108875378 D2587P275 192.75 1555.34 108875576
D2587P47 194.7 1539.77 108835562 D2587P27 192.7 1555.75 108835760
D2587P465 194.65 1540.16 108875386 D2587P265 192.65 1556.15 108875584
D2587P46 194.6 1540.56 108835570 D2587P26 192.6 1556.55 108835778
D2587P455 194.55 1540.95 108875394 D2587P255 192.55 1556.96 108875592
D2587P45 194.5 1541.35 108835588 D2587P25 192.5 1557.36 108835786
D2587P445 194.45 1541.75 108875402 D2587P245 192.45 1557.77 108875600
D2587P44 194.4 1542.14 108835596 D2587P24 192.4 1558.17 108835794
D2587P435 194.35 1542.54 108875410 D2587P235 192.35 1558.58 108875618
D2587P43 194.3 1542.94 108835604 D2587P23 192.3 1558.98 108835802
D2587P425 194.25 1543.33 108875428 D2587P225 192.25 1559.39 108875626
D2587P42 194.2 1543.73 108835612 D2587P22 192.2 1559.79 108835810
D2587P415 194.15 1544.13 108875436 D2587P215 192.15 1560.20 108875634

Agere Systems Inc. 9

Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

Ordering Information (continued)

Table 7. D2587P 20 mW CW Laser with Locker (C- and L-Band) Ordering Information (continued)

Device ITU-T Center Comcode Device ITU-T Center

Comcode
Code Frequency Wavelength Code Frequency Wavelength
(THz) (nm) (THz) (nm)
D2587P21 192.1 1560.61 108835828 D2587P900 190.0 1577.86 108836990
D2587P205 192.05 1561.01 108875642 D2587P8995 189.95 1578.27 108876079
D2587P20 192.0 1561.42 108835836 D2587P899 189.9 1578.69 108836982
D2587P195 191.95 1561.83 108875659 D2587P8985 189.85 1579.10 108876061
D2587P19 191.9 1562.23 108835844 D2587P898 189.8 1579.52 108836974
D2587P185 191.85 1562.64 108875667 D2587P8975 189.75 1579.93 108876046
D2587P18 191.8 1563.05 108835851 D2587P897 189.7 1580.35 108836511
D2587P175 191.75 1563.45 108875675 D2587P8965 189.65 1580.77 108876038
D2587P17 191.7 1563.86 108835869 D2587P896 189.6 1581.18 108836503
D2587P9165 191.65 1564.27 109976244 D2587P8955 189.55 1581.60 108876020
D2587P916 191.6 1564.68 108838418 D2587P895 189.5 1582.02 108836495
D2587P9155 191.55 1565.09 108876236 D2587P8945 189.45 1582.44 108876012
D2587P915 191.5 1565.50 108838400 D2587P894 189.4 1582.85 108836487
D2587P9145 191.45 1565.90 108876228 D2587P8935 189.35 1583.27 108876004
D2587P914 191.4 1566.31 108837139 D2587P893 189.3 1583.69 108836479
D2587P9135 191.35 1566.72 108876210 D2587P8925 189.25 1584.11 108875980
D2587P913 191.3 1567.13 108837121 D2587P892 189.2 1584.53 108836461
D2587P9125 191.25 1567.54 108876202 D2587P8915 189.15 1584.95 108875972
D2587P912 191.2 1567.95 108837113 D2587P891 189.1 1585.36 108836453
D2587P9115 191.15 1568.36 108876194 D2587P8905 189.05 1585.78 108875964
D2587P911 191.1 1568.77 108837105 D2587P890 189.0 1586.20 108836446
D2587P9105 191.05 1569.18 108876186 D2587P8895 188.95 1586.62 108875956
D2587P910 191.0 1569.59 108837097 D2587P889 188.9 1587.04 108836438
D2587P9095 190.95 1570.01 108876178 D2587P8885 188.85 1587.46 108875949
D2587P909 190.9 1570.42 108837089 D2587P888 188.8 1587.88 108836420
D2587P9085 190.85 1570.83 108876160 D2587P8875 188.75 1588.30 108875931
D2587P908 190.8 1571.24 108837071 D2587P887 188.7 1588.72 108836412
D2587P9075 190.75 1571.65 108876152 D2587P8865 188.65 1589.15 108875923
D2587P907 190.7 1572.06 108837063 D2587P886 188.6 1589.57 108836404
D2587P9065 190.65 1572.48 108876145 D2587P8855 188.55 1589.99 108875915
D2587P906 190.6 1572.89 108837055 D2587P885 188.5 1590.41 108836396
D2587P9055 190.55 1573.30 108876137 D2587P8845 188.45 1590.83 108875907
D2587P905 190.5 1573.71 108837048 D2587P884 188.4 1591.26 108836388
D2587P9045 190.45 1574.13 108876129 D2587P8835 188.35 1591.68 108875899
D2587P904 190.4 1574.54 108837030 D2587P883 188.3 1592.10 108836370
D2587P9035 190.35 1574.95 108876111 D2587P8825 188.25 1592.52 108875881
D2587P903 190.3 1575.37 108837022 D2587P882 188.2 1592.95 108836362
D2587P9025 190.25 1575.78 108876103 D2587P8815 188.15 1593.37 108875873
D2587P902 190.2 1576.20 108837014 D2587P881 188.1 1593.79 108836354
D2587P9015 190.15 1576.61 108876095 D2587P8805 188.05 1594.22 108875865
D2587P901 190.1 1577.03 108837006 D2587P880 188.0 1594.64 108836347
D2587P9005 190.05 1577.44 108876087 D2587P8795 187.95 1595.06 108875857
10 Agere Systems Inc.
Data Sheet, Rev. 2 Wavelength-Selected, High-Power D2587P-Type (with Wavelength
July 2001 Locker)/D2547P-Type Isolated DFB Laser Modules

Ordering Information (continued)

Table 7. D2587P 20 mW CW Laser with Locker (C- and L-Band) Ordering Information (continued)

Device ITU-T Center Comcode Device ITU-T Center

Comcode
Code Frequency Wavelength Code Frequency Wavelength
(THz) (nm) (THz) (nm)
D2587P879 187.9 1595.49 108836339 D2587P870 187.0 1603.17 108835950
D2587P8785 187.85 1595.91 108875840 D2587P8695 186.95 1603.60 108875758
D2587P878 187.8 1596.34 108836321 D2587P869 186.9 1604.03 108835943
D2587P8775 187.75 1596.76 108875832 D2587P8685 186.85 1604.46 108875741
D2587P877 187.7 1597.19 108836313 D2587P868 186.8 1604.88 108835935
D2587P8765 187.65 1597.62 108875824 D2587P8675 186.75 1605.31 108875733
D2587P876 187.6 1598.04 108836016 D2587P867 186.7 1605.74 108835927
D2587P8755 187.55 1598.47 108875816 D2587P8665 186.65 1606.17 108875725
D2587P875 187.5 1598.89 108836008 D2587P866 186.6 1606.60 108835919
D2587P8745 187.45 1599.32 108875808 D2587P8655 186.55 1607.04 108875717
D2587P874 187.4 1599.75 108835992 D2587P865 186.5 1607.47 108835901
D2587P8735 187.35 1600.17 108875790 D2587P8645 186.45 1607.90 108875709
D2587P873 187.3 1600.60 108835984 D2587P864 186.4 1608.33 108835893
D2587P8725 187.25 1601.03 108875782 D2587P8635 186.35 1608.76 108875691
D2587P872 187.2 1601.46 108835976 D2587P863 186.3 1609.19 108835885
D2587P8715 187.15 1601.88 108875774 D2587P8625 186.25 1609.62 108875683
D2587P871 187.1 1602.31 108835968 D2587P862 186.2 1610.06 108835877
D2587P8705 187.05 1602.74 108875766

Agere Systems Inc. 11

Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

Ordering Information (continued)

Table 8. D2547P 20 mW CW Laser without Locker (C-Band)

ITU-T Center ITU-T Center

Device Device
Frequency Wavelength Comcode Frequency Wavelength Comcode
Code Code
(THz) (nm) (THz) (nm)
D2547P61 196.1 1528.77 108838301 D2547P38 193.8 1546.92 108838079
D2547P60 196.0 1529.55 108838293 D2547P37 193.7 1547.72 108838061
D2547P59 195.9 1530.33 108838285 D2547P36 193.6 1548.51 108838053
D2547P58 195.8 1531.12 108838277 D2547P35 193.5 1549.32 108838046
D2547P57 195.7 1531.90 108838269 D2547P34 193.4 1550.12 108838038
D2547P56 195.6 1532.68 108838251 D2547P33 193.3 1550.92 108838020
D2547P55 195.5 1533.47 108838244 D2547P32 193.2 1551.72 108838012
D2547P54 195.4 1534.25 108838236 D2547P31 193.1 1552.52 108838004
D2547P53 195.3 1535.04 108838228 D2547P30 193.0 1553.33 108837998
D2547P52 195.2 1535.82 108838210 D2547P29 192.9 1554.13 108837980
D2547P51 195.1 1536.61 108838202 D2547P28 192.8 1554.94 108837972
D2547P50 195.0 1537.40 108838194 D2547P27 192.7 1555.75 108837964
D2547P49 194.9 1538.19 108838186 D2547P26 192.6 1556.55 108837956
D2547P48 194.8 1538.98 108838178 D2547P25 192.5 1557.36 108837949
D2547P47 194.7 1539.77 108838160 D2547P24 192.4 1558.17 108837931
D2547P46 194.6 1540.56 108838152 D2547P23 192.3 1558.98 108837923
D2547P45 194.5 1541.35 108838145 D2547P22 192.2 1559.79 108837915
D2547P44 194.4 1542.14 108838137 D2547P21 192.1 1560.61 108837907
D2547P43 194.3 1542.94 108838129 D2547P20 192.0 1561.42 108837899
D2547P42 194.2 1543.73 108838111 D2547P19 191.9 1562.23 108837881
D2547P41 194.1 1544.53 108838103 D2547P18 191.8 1563.05 108837873
D2547P40 194.0 1545.32 108838095 D2547P17 191.7 1563.86 108837865
D2547P39 193.9 1546.12 108838087

12 Agere Systems Inc.

Data Sheet, Rev. 2 Wavelength-Selected, High-Power D2587P-Type (with Wavelength
July 2001 Locker)/D2547P-Type Isolated DFB Laser Modules

Ordering Information (continued)

Table 9. D2547P 20 mW CW Laser without Locker (L-Band) Ordering Information

Device Device
ITU Center Comcode ITU Center Comcode
Code Code
Frequency Wavelength Frequency Wavelength
(THz) (nm) (THz) (nm)

D2547P916 191.6 1564.68 108837840 D2547P888 188.8 1587.88 108837568

D2547P915 191.5 1565.50 108837832 D2547P887 188.7 1588.73 108837394
D2547P914 191.4 1566.31 108837824 D2547P886 188.6 1589.57 108837386
D2547P913 191.3 1567.13 108837816 D2547P885 188.5 1590.41 108837378
D2547P912 191.2 1567.95 108837808 D2547P884 188.4 1591.26 108837360
D2547P911 191.1 1568.77 108837790 D2547P883 188.3 1592.10 108837352
D2547P910 191.0 1569.59 108837782 D2547P882 188.2 1592.95 108837345
D2547P909 190.9 1570.42 108837774 D2547P881 188.1 1593.79 108837337
D2547P908 190.8 1571.24 108837766 D2547P880 188.0 1594.64 108837329
D2547P907 190.7 1572.06 108837758 D2547P879 187.9 1595.49 108837311
D2547P906 190.6 1572.89 108837741 D2547P878 187.8 1596.34 108837303
D2547P905 190.5 1573.71 108837733 D2547P877 187.7 1597.19 108837295
D2547P904 190.4 1574.54 108837725 D2547P876 187.6 1598.04 108837287
D2547P903 190.3 1575.37 108837717 D2547P875 187.5 1598.89 108837279
D2547P902 190.2 1576.20 108837709 D2547P874 187.4 1599.75 108837261
D2547P901 190.1 1577.03 108837691 D2547P873 187.3 1600.60 108837253
D2547P900 190.0 1577.86 108837683 D2547P872 187.2 1601.46 108837246
D2547P899 189.9 1578.69 108837675 D2547P871 187.1 1602.31 108837238
D2547P898 189.8 1579.52 108837667 D2547P870 187.0 1603.17 108837220
D2547P897 189.7 1580.35 108837659 D2547P869 186.9 1604.03 108837212
D2547P896 189.6 1581.18 108837642 D2547P868 186.8 1604.88 108837204
D2547P895 189.5 1582.02 108837634 D2547P867 186.7 1605.74 108837196
D2547P894 189.4 1582.85 108837626 D2547P866 186.6 1606.60 108837188
D2547P893 189.3 1583.69 108837618 D2547P865 186.5 1607.47 108837170
D2547P892 189.2 1584.53 108837600 D2547P864 186.4 1608.33 108837162
D2547P891 189.1 1585.36 108837592 D2547P863 186.3 1609.19 108837154
D2547P890 189.0 1586.20 108837584 D2547P862 186.2 1610.06 108837147
D2547P889 188.9 1587.04 108837576

Agere Systems Inc. 13

Wavelength-Selected, High-Power D2587P-Type (with Wavelength Data Sheet, Rev. 2
Locker)/D2547P-Type Isolated DFB Laser Modules July 2001

For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: [email protected]
N. AMERICA: Agere Systems Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18109-3286
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)
ASIA PACIFIC: Agere Systems Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256
Tel. (65) 778 8833, FAX (65) 777 7495
CHINA: Agere Systems (Shanghai) Co., Ltd., 33/F Jin Mao Tower, 88 Century Boulevard Pudong, Shanghai 200121 PRC
Tel. (86) 21 50471212, FAX (86) 21 50472266
JAPAN: Agere Systems Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan
Tel. (81) 3 5421 1600, FAX (81) 3 5421 1700
EUROPE: Data Requests: DATALINE: Tel. (44) 7000 582 368, FAX (44) 1189 328 148
Technical Inquiries: OPTOELECTRONICS MARKETING: (44) 1344 865 900 (Ascot UK)

Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. ST is a
registered trademark of Agere Systems Inc.

Copyright © 2001 Agere Systems Inc.

All Rights Reserved

July 2001
DS00-263OPTO-2 (Replaces DS00-263OPTO-1)