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Snubberless™, Logic Level and Standard 8 A Triacs: Features

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0% found this document useful (0 votes)
82 views

Snubberless™, Logic Level and Standard 8 A Triacs: Features

Uploaded by

jhon7410
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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T8T

Snubberless™, logic level and standard 8 A Triacs

Datasheet - production data

A2 Features
• Medium current Triac
G • High static and dynamic commutation
A1 • Low thermal resistance with clip bonding
• Packages is RoHS (2002/95/EC) compliant
• 600 V VRM
• UL certified (ref. file E81734)
A1
A2
G

TO-220AB insulated
Applications
(T8xxT-6I) • Value sensitive application
• General purpose ac line load switching

Table 1. Device summary • Motor control circuits in power tools

Part number Symbol Value


• Small home appliances, lighting
• Inrush current limiting circuits
IGT 3Q
T810T-6I
logic level
10 mA • Overvoltage crowbar protection

T820T-6I IGT 3Q
T835T-6I Snubberless
20 / 35 mA Description
IGT 4Q Available in through-hole, the T8T series of Triacs
T825T-6I 25 mA can be used as on/off or phase angle control
standard
function in general purpose ac switching where
high commutation capability is required.
This series can be designed in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).

TM: Snubberless is a trademark of STMicroelectronics

October 2013 DocID16192 Rev 4 1/8


This is information on a product in full production. www.st.com
Characteristics T8T

1 Characteristics

Table 2. Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified)


Symbol Parameter Value Unit

IT(RMS) On-state rms current (full sine wave) Tc = 97 °C 8 A

Non repetitive surge peak on-state current F = 50 Hz tp = 20 ms 60


ITSM A
(full cycle, Tj initial = 25 °C) F = 60 Hz tp = 16.7 ms 63
I ²t I²t Value for fusing tp = 10 ms 26 A ²s
Critical rate of rise of on-state current IG = 2 x IGT
dI/dt F = 60 Hz Tj = 125 °C 50 A/µs
tr ≤ 100 ns
VDSM, VDRM, VRRM
Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C V
VRSM + 100
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range - 40 to + 150 °C
Tj Operating junction temperature range - 40 to + 125 °C

2/8 DocID16192 Rev 4


T8T Characteristics

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)


T8xxT
Symbol Test conditions Quadrant Unit
T810T T820T T825T T835T

I - II - III 10 20 25 35
IGT (1) VD = 12 V, RL = 30 Ω MAX. mA
IV 40
VD = VDRM, RL = 30 Ω,
VGT ALL MAX. 1.3 V
Tj = 25 °C

VD = VDRM, RL = 3.3 kΩ,


VGD ALL MIN. 0.2 V
Tj = 125 °C
IH (2) IT = 500 mA MAX. 15 25 30 40 mA
I - III 20 35 40 50
IL IG = 1.2 IGT IV MAX. 40 mA
II 25 40 70 70
Tj = 125 °C 100 750 500 2000
dV/dt (2) VD = 67% VDRM, gate open MIN. V/µs
Tj = 150 °C(3) 50 500 300 1000
(dV/dt)c = 0.1 V/µs 5.4
(dV/dt)c = 10 V/µs Tj = 125 °C 2 4.5
Without snubber 3.4 8
(dI/dt)c (2) MIN. A/ms
(dV/dt)c = 0.1 V/µs 2.5
(dV/dt)c = 10 V/µs Tj = 150 °C (3) 1 2
Without snubber 2 6.5
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above Tj max.

Table 4. Static characteristics


Symbol Test conditions Value Unit

VT (1) ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.60 V


VTO (1)
Threshold voltage Tj = 125 °C MAX. 0.87 V
RD (1) Dynamic resistance Tj = 125 °C MAX. 60 mΩ
Tj = 25 °C 5 µA
IDRM, VDRM = VRRM MAX.
Tj = 125 °C 1
IRRM mA
VD = 0.9 x VDRM Tj = 150 °C(2) TYP. 1.9

1. For both polarities of A2 referenced to A1.


2. Derating information for excess temperature above Tj max.

DocID16192 Rev 4 3/8


8
Characteristics T8T

Table 5. Thermal resistance


Symbol Parameter Value Unit

Rth(j-c) Junction to case (AC) 2.8 °C/W


Rth(j-a) Junction to ambient (DC) 60 °C/W

Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
rms on-state current temperature
P(W) IT(RMS)(A)
10
10
9
α = 180° 9 α = 180°
8 8
7 7
6 6
5 5
4 4
3 3
2 180°
2
1 1
IT(RMS)(A) TC(°C)
0 0
0 1 2 3 4 5 6 7 8 0 25 50 75 100 125

Figure 3. On-state rms current versus ambient Figure 4. Relative variation of thermal
temperature (free air convection) impedance versus pulse duration
IT(RMS)(A) K = [Zth / Rth]
2.5 1.0E+00
Zth(j-c)
α = 180° Zth(j-a)

2.0
TO-220AB

1.5
1.0E-01

1.0

0.5 TO-220AB

Ta(°C) Tp(s)
0.0 1.0E-02
0 25 50 75 100 125 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

Figure 5. On-state characteristics (maximum Figure 6. Surge peak on state current versus
values) number of cycles
ITM(A) ITSM(A)
100 70

60
t = 20 ms

50 Non repetitive One cycle


Tj initial = 25 °C
40
10
30
Repetitive
Tc = 97 °C
20
Tjmax:
Vto = 0.87 V 10
VTM(V) Rd =6 0 mΩ Number of cycles
1 0
0 1 2 3 4 5 1 10 100 1000

4/8 DocID16192 Rev 4


T8T Characteristics

Figure 7. Non repetitive surge peak on-state Figure 8. Relative variation of gate trigger
current for a sinusoidal current and gate trigger voltage versus junction
temperature
ITSM(A), I²t (A²s) IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
1000 3.0
Tj initial = 25 °C typical values
2.5 IGT Q3
IGT Q1-Q2
ITSM 2.0
dl /dt limitation: 50 A / µs

100 1.5

1.0 IGT Q1-Q2-Q3


I²t
0.5

pulse with width tp<10 ms, and corresponding value of I²t


tp(ms) Tj(°C)
10 0.0
0.01 0.10 1.00 10.00 -50 -25 0 25 50 75 100 125

Figure 9. Relative variation of holding current Figure 10. Relative variation of static dV/dt
and latching current versus junction immunity versus junction temperature
temperature
IH, IL[Tj] / IH, IL[Tj = 25 °C]
2.0
dV / dt [Tj] / dV / dt [Tj = 125 °C]
7
typical values
VD = VR = 402 V
6
1.5
5

4
1.0
3
IL
2
0.5
IH 1
Tj(°C) Tj(°C)
0
0.0
25 50 75 100 125
-50 -25 0 25 50 75 100 125

Figure 11. Relative variation of critical rate of Figure 12. Relative variation of leakage current
decrease of main current versus junction versus junction temperature
temperature
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM
(dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C] [Tj = 125 °C; 600 V]
6 1.0E+00
VDRM = VRRM = 600 V
5

VDRM = VRRM = 400 V


4 1.0E-01

VDRM = VRRM = 200 V


2
1.0E-02

1
for different values of blocking voltage
Tj(°C)
0 Tj(°C)
1.0E-03
25 50 75 100 125
25 50 75 100 125

DocID16192 Rev 4 5/8


8
Package information T8T

2 Package information

• Epoxy meets UL94, V0


• Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Table 6. TO-220AB Insulated dimensions


Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625


a1 3.75 0.147
B C
a2 13.00 14.00 0.511 0.551
ØI b2
B 10.00 10.40 0.393 0.409
L
F b1 0.61 0.88 0.024 0.034

A b2 1.23 1.32 0.048 0.051


I4 C 4.40 4.60 0.173 0.181
l3

c2
c1 0.49 0.70 0.019 0.027
a1
c2 2.40 2.72 0.094 0.107
l2
a2
e 2.40 2.70 0.094 0.106

M
F 6.20 6.60 0.244 0.259
b1 c1
e ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

6/8 DocID16192 Rev 4


T8T Ordering information

3 Ordering information

Figure 13. Ordering information scheme

T 8 10 T - 6 I

TRIAC

Current
8=8A

Sensitivity
10 = 10 mA
20 = 20 mA
25 = 25 mA
35 = 35 mA

Application specific

Voltage
6 = 600 V

Package
I = TO-220AB-Ins.

Table 7. Ordering information


Order code Marking Package Weight Base qty Delivery mode

T810T-6I T810T-6I
T820T-6I T820T-6I
TO-220AB-Ins. 2.3 g 50 Tube
T825T-6I T825T-6I
T835T-6I T835T-6I

4 Revision history

Table 8. Document revision history


Date Revision Changes

10-Sep-2009 1 First issue.


18-Jan-2010 2 Updated pag.1.
Updated: Features. Replaced order codes with part numbers in
20-Sep-2011 3
Table 1.
16-Sep-2013 4 Replaced order codes with part numbers in Table 1.

DocID16192 Rev 4 7/8


8
T8T

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8/8 DocID16192 Rev 4

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