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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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 FDS9933
 
September 2006

FDS9933
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features
This P-Channel MOSFET is a rugged gate version of • –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management RDS(ON) = 90 mΩ @ VGS = –2.5 V
applications with a wide range of gate drive voltage
(2.5V – 12V). • Extended VGSS range (±12V) for battery applications

Applications • Low gate charge

• Load switch • High performance trench technology for extremely

• Motor drive low RDS(ON)
• DC/DC conversion
• High power and current handling capability
• Power management

DD1 5 4
DD1
DD2 6 Q1 3
D2
D
7 2
SO-8 G1 Q2
S1 G 8 1
G2 S
S2 S
Pin 1 SO-8 S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current – Continuous (Note 1a) –5 A
– Pulsed –30
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
9933 FDS9933 13’’ 12mm 2500 units

2006 Fairchild Semiconductor International FDS9933 Rev C

 FDS9933
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C –12 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –0.8 –1.2 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 3 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –4.5 V, ID = –3.2 A 44 55 mΩ
On–Resistance VGS = –2.5 V, ID = –1.0 A 72 90
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –16 A
gFS Forward Transconductance VDS = –9 V, ID = –3.4 A 8 S

Dynamic Characteristics
Ciss Input Capacitance VDS = –10 V, V GS = 0 V, 825 pF
Coss Output Capacitance f = 1.0 MHz 420 pF
Crss Reverse Transfer Capacitance 150 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = –10 V, ID = –1 A, 16 40 ns
VGS = –4.5 V, RGEN = 6 Ω
tr Turn–On Rise Time 46 80 ns
td(off) Turn–Off Delay Time 40 70 ns
tf Turn–Off Fall Time 25 40 ns
Qg Total Gate Charge VDS = –6 V, ID = –3.2A, 10 20 nC
VGS = –4.5 V
Qgs Gate–Source Charge 2.1 nC
Qgd Gate–Drain Charge 3.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.0 A
VSD Drain–Source Diode Forward VGS = 0 V, IS = –2.0 A (Note 2) –0.7 –1.2 V
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when b) 125°C/W when c) 135°C/W when

mounted on a mounted on a mounted on a
0.5in2 pad of 2 0.02 in2 pad of minimum pad.
oz copper 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS9933 Rev C
 FDS9933
Typical Characteristics:

30 1.8
VGS = -4.5V -3.5V VGS=-2.5V
V

DRAIN-SOURCE ON-RESISTANCE
1.6
-ID, DRAIN CURRENT (A)

-4.0V

RDS(ON), NORMALIZED
-3.0V
20 V
1.4
-3.0V

-2.5V -3.5V
1.2
10 -4.0V
-4.5V

-2.0V 1

0 0.8
0 1 2 3 4 5 0 6 12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4 0.14
ID = -2.5A
ID = -5A
DRAIN-SOURCE ON-RESISTANCE

1.3 0.12
RDS(ON), ON-RESISTANCE (OHM)

VGS = -4.5V
RDS(ON), NORMALIZED

1.2 0.1

1.1 0.08
o
TA = 125 C
1 0.06

TA = 25oC
0.9 0.04

0.8 0.02
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

30 100
VDS = -5V TA = -55oC 125 C
o VGS =0V
-IS, REVERSE DRAIN CURRENT (A)

25 10
-ID, DRAIN CURRENT (A)

25oC
20 1

o
15 0.1 TA = 125 C

25oC
10 0.01
-55oC
5 0.001

0 0.0001
0 1 2 3 4 5 0 0.4 0.8 1.2 1.6
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9933 Rev C
 FDS9933
Typical Characteristics:

5 1600

ID = -5A VDS = -4V f = 1 MHz

-VGS, GATE-SOURCE VOLTAGE (V)

-8V VGS = 0 V
4
1200

CAPACITANCE (pF)
-6V Ciss
3

800

2
Coss
400
1

Crss
0 0
0 2 4 6 8 10 0 4 8 12 16 20
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
100µs RθJA = 135°C/W
RDS(ON) LIMIT
1ms 40 TA = 25°C
-ID, DRAIN CURRENT (A)

10 10ms
100ms
1s 30
10s
1 DC
20
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 135oC/W 10
o
TA = 25 C

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
RθJA(t) = r(t) * RθJA
o
0.2 RθJA = 135 C/W
0.1 0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS9933 Rev C
TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™
ActiveArray™ GlobalOptoisolator™ OCXPro™ SMART START™ UltraFET®
Bottomless™ GTO™ OPTOLOGIC® SPM™ VCX™
Build it Now™ HiSeC™ OPTOPLANAR™ Stealth™ Wire™
CoolFET™ I2C™ PACMAN™ SuperFET™
CROSSVOLT™ i-Lo™ POP™ SuperSOT™-3
DOME™ ImpliedDisconnect™ Power247™ SuperSOT™-6
EcoSPARK™ IntelliMAX™ PowerEdge™ SuperSOT™-8
E2CMOS™ ISOPLANAR™ PowerSaver™ SyncFET™
EnSigna™ LittleFET™ PowerTrench® TCM™
FACT™ MICROCOUPLER™ QFET® TinyBoost™
FAST® MicroFET™ QS™ TinyBuck™
FASTr™ MicroPak™ QT Optoelectronics™ TinyPWM™
FPS™ MICROWIRE™ Quiet Series™ TinyPower™
FRFET™ MSX™ RapidConfigure™ TinyLogic®
MSXPro™ RapidConnect™ TINYOPTO™
Across the board. Around the world.™ μSerDes™ TruTranslation™
The Power Franchise® ScalarPump™ UHC™
Programmable Active Droop™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component is any component of a life support device or
(a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected to
sustain life, or (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be safety or effectiveness.
reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I20
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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