Industrial Electronics Principles and Applications

MCQs

1. Radiation sensing
2. EEG
3. 100 to 10000 KeV
4. SCS
5. Diac
6. Between 4 to 10 KΩ
7. Programmable Unijunction Transistor
8. Diac
9. SCR
10. Seebeck effect
11. Both A and B above
12. SCR
13. Increases
14. two main terminals and a gate terminal
15. in inverse-parallel
16. 10 to 100 KeV
17. 0.1 to 0.0001 nm
18. cathode, anode, gate
19. 55 pF
20. Four
21. bidirectional
22. By appropriate gate current
23. both positive and negative
24. Two
25. a rectifier and transistor
26. Gate
27. Four
28. Three
29. heavily
30. two pn junctions
31. double-based
32. an AC
33. has low leakage current
34. Gate
35. Rate effect
36. Sawtooth generator
37. Diac
38. current
39. decreases
40. one pn junction
41. a sawtooth generator
42. By breakover voltage
43. 60 Hz frequency
44. high
45. two SCRs in parallel opposition
46. RB1 / (RB1 + RB2)
47. Reduce anode voltage to zero
48. Regulator
49. more than
50. essentially constant
51. Damping ratio
52. Transfer function
53. breakover voltage
54. LASCR
55. a triac without a gate terminal
56. Negative resistance
57. Biomedical electronics
58. UJT
59. Negative resistance
60. of its high temperature and power capabilities
61. Photovoltaic transduction
62. SCR
63. less than
64. Diac
65. starts conducting
66. y(t) = A0 + A1es1t
67. Servomechanism
68. Forward breakover voltage
69. Root locus
70. Open-loop control system
71. Holding current
72. Reverse breakdown voltage
73. 20 mA
74. Flywheel governor
75. Seismic mass
76. All of the above
77. Thy
78. 1 μs
79. Gas-filled triode
80. positive
81. positive
82. Hygrometer
83. Bourdon tube
84. Changing gate voltage
85. Thyristor
86. Three
87. Differential
88. gate
89. 1 V
90. 5 to 40 μs
91. Silicon
92. electroencephalography
93. accelerometers
94. unidirectional
95. decreases
96. small leakage current
97. positive or negative half-cycle
98. Gyro
99. Bellow
100. 1 V
101. Diac
102. Breakover voltage
103. Shockley diode
104. PUT
105. Holding current
106. SCR
107. Firing delay angle
108. Switches
109. Interbase resistance
110. 32 V
111. VD + VG
112. 13.6 V
113. Triac
114. Programmable
115. Emitter, Base1, Base2
116. Valley current
117. 2
118. Diac
119. 15.7 V
120. Negative resistance region
121. Base1
122. SCR
123. Thyristors
124. Diac
125. UJT
126. Doped junction
127. 3 terminal bidirectional switch
128. SCR
129. Conducts when triggered in both direction
130. Holding current
131. Thyristor
132. Shockley
133. PNPN device
134. SCS
135. SUS
136. Device with three junctions
137. Both a and b
138. At least 10 microseconds
139. SCS
140. Process of breaking the silicon slice into chips
141. Latching
142. Holding current
143. Ignitron
144. Interrupt anode current
145. Snubber
146. Gate, anode1 and anode2
147. Latching
148. Peak voltage
149. Intrinsic standoff ratio
150. Negative resistance region
151. Thyrector
152. Conduction angle
153. SCR
154. Thyratron
155. Conducting and non-conducting
156. Interrupt anode current
157. The junction diode
158. SCR
159. Snubber
160. Crowbar
161. DIAC
162. Shockley diodes
163. SCR’s
164. Gate, anode1 and anode2
165. UJT
166. Peak voltage
167. Intrinsic standoff ratio
168. Negative resistance region
169. 8 V
170. Gate
171. Breakback region
172. Intrinsic standoff ratio
173. Squeeze time
174. Resistance welding
175. Hold time
176. Off period
177. Coalescence
178. Weld time
179. Pressure applied
180. Mechanical system
181. Press-type welder
182. Electrical system
183. Press-type welder
184. Control system
185. Portable spot welder
186. Forge welding
187. Weld
188. Transformer
189. RSEW (Resistance Seam Welding)
190. Automobiles
191. Off period
192. 1 in.
193. Elihu Thomson
194. 1886
195. Coalescense
196. 60 – 100 V
197. 50 – 400 A
198. Spot welding
199. Gamma rays
200. 1 V
201. RC across SCR
202. force commutation
203. 60 m sec
204. lower than
205. SCR
206. both current interruption and forced commutation
207. 0.38461
208. gate
209. an ac motor control
210. 26.25 kΩ
211. TRIAC
212. Negative resistance
213. DIAC
214. Diac
215. thyristors
216. Forward breakover voltage
217. UJT
218. reverse gate leakage current
219. switching current
220. UJT thyristor
221. Between 4 to 10 KΩ
222. SCS
223. of its high temperature and power capabilities
224. essentially constant
225. 10 MW, 2000 A, 1800 V
226. Thyristor
227. Changing gate voltage
228. About 50 kHz
229. higher than
230. double-based
231. SCS
232. 100 kΩ or more
233. By breakover voltage
234. gate current
235. Suppress dv/dt
236. Silicon
237. positive or negative half-cycle
238. It should be synchronized with the main supply
239. positive
240. All of the above
241. Three
242. SCR
243. GTO
244. All of the above
245. Rate effect
246. LASCR
247. 60 Hz frequency
248. more than
249. 15 M Ω
250. 6.46915
251. holding current
252. unidirectional
253. heavily
254. current
255. Electrons and holes
256. low-current dropout
257. SCR
258. Reduce anode voltage to zero
259. an SCS
260. leakage current
261. 30 µs to 100 µs
262. a UJT.
263. PUT
264. holding current
265. Holding current
266. breakover voltage
267. this is normal; nothing is wrong.
268. RB1 / (RB1 + RB2)
269. 1 V
270. 5 to 40 μs
271. GTO
272. in inverse-parallel
273. conduction angle
274. interbase resistance
275. More than latching current
276. Gas-filled triode
277. 1 μs
278. Gas-filled triode
279. GTO
280. Increases
281. show high resistance in both directions
282. a sawtooth generator
283. Noise Immunity
284. two SCRs in parallel opposition
285. a rectifier and resistance
286. MCT
287. two main terminals and a gate terminal
288. both positive and negative
289. small leakage current
290. SCR
291. Thy
292. Diac
293. Holding current
294. PUT
295. has low leakage current
296. Diac
297. both an infrared LED and a photodetector
298. SCR
299. Peak point
300. decreases

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