PolarP2TM IXTA460P2 VDSS = 500V

Power MOSFET IXTP460P2 ID25 = 24A

IXTQ460P2 RDS(on) ≤ 270mΩΩ
N-Channel Enhancement Mode trr(typ) = 400ns
Avalanche Rated IXTH460P2
Fast Intrinsic Diode
TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)

G G
S D
G S
D (Tab) DS D (Tab)
D (Tab)

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25°C to 150°C 500 V
VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V TO-247 (IXTH)
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC = 25°C 24 A
IDM TC = 25°C, Pulse Width Limited by TJM 50 A G
D D (Tab)
IA TC = 25°C 12 A S
EAS TC = 25°C 750 mJ
G = Gate D = Drain
dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns S = Source Tab = Drain
PD TC = 25°C 480 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C Features
TL Maximum Lead Temperature for Soldering 300 °C
z
TSOLD Plastic Body for 10s 260 °C Avalanche Rated
z
Fast Intrinsic Diode
FC Mounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in. z
Dynamic dv/dt Rated
Md Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in. z
Low Package Inductance
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g Advantages
TO-247 6.0 g
z
High Power Density
z
Easy to Mount
z
Symbol Test Conditions Characteristic Values Space Savings
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V Applications
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V z
Switch-Mode and Resonant-Mode
IGSS VGS = ± 30V, VDS = 0V ± 100 nA Power Supplies
z
DC-DC Converters
IDSS VDS = VDSS, VGS= 0V 25 μA z
Laser Drivers
TJ = 125°C 250 μA z
AC and DC Motor Drives
z
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 270 mΩ Robotics and Servo Controls

© 2010 IXYS CORPORATION, All Rights Reserved DS100216B(06/10)

 IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 14 24 S
Ciss 2890 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 280 pF
Crss 22 pF
td(on) 15 ns
Resistive Switching Times
tr 9 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 30 ns
RG = 10Ω (External)
tf 5 ns
Qg(on) 48 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 13 nC
Qgd 16 nC
RthJC 0.26 °C/W
RthCS TO-220 0.50 °C/W
RthCS TO-3P & TO-247 0.25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 24 A
ISM Repetitive, Pulse Width Limited by TJM 96 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr IF = 12A, -di/dt = 100A/μs 400 ns
IRM VR = 100V, VGS = 0V 19.6 A
QRM 3.9 μC

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
TO-263 (IXTA) Outline TO-3P (IXTQ) Outline

1. Gate
2. Collector
3. Emitter
4. Collector
Bottom
Side

Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005

TO-247 (IXTH) Outline

TO-220 (IXTP) Outline

∅P
1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source

Dim. Millimeter Inches

Pins: 1 - Gate 2 - Drain
Min. Max. Min. Max.
3 - Source
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

© 2010 IXYS CORPORATION, All Rights Reserved

 IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2

Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC

25 55
VGS = 10V VGS = 10V
50
7V 7V
20 45

40

ID - Amperes
35
ID - Amperes

15
6V
30

25
10 6V
20

15
5 10

5V 5 5V
0 0
0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30
VDS - Volts VDS - Volts

Fig. 4. RDS(on) Normalized to ID = 12A Value vs.

Fig. 3. Output Characteristics @ T J = 125ºC Junction Temperature
25 3.4
VGS = 10V
VGS = 10V
7V 3.0
20
2.6
R DS(on) - Normalized

6V
I D = 24A
2.2
ID - Amperes

15

1.8 I D = 12A

10
1.4

5V
1.0
5
0.6
4V

0 0.2
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Fig. 6. Maximum Drain Current vs.
Drain Current Case Temperature
3.8 28

VGS = 10V
3.4 24

3.0 TJ = 125ºC
20
R DS(on) - Normalized

2.6
ID - Amperes

16
2.2
12
1.8

8
1.4
TJ = 25ºC
1.0 4

0.6 0
0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150
ID - Amperes TC - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2

Fig. 7. Input Admittance Fig. 8. Transconductance

35 50

TJ = - 40ºC
30
40

25
TJ = 125ºC 25ºC

g f s - Siemens
ID - Amperes

25ºC 30
20
- 40ºC
125ºC
15
20

10

10
5

0 0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 25 30 35
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
80 10

VDS = 250V
70
I D = 12A
8
I G = 10mA
60

50
IS - Amperes

VGS - Volts

40

4
30
TJ = 125ºC
20
TJ = 25ºC 2
10

0 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 20 25 30 35 40 45 50
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

10,000 100
RDS(on) Limit

25µs
Capacitance - PicoFarads

Ciss 10

1,000 100µs
ID - Amperes

Coss
100
1ms
0.1 TJ = 150ºC
TC = 25ºC
f = 1 MHz Single Pulse
Crss 10ms
10 0.01
0 5 10 15 20 25 30 35 40 10 100 1000
VDS - Volts VDS - Volts

© 2010 IXYS CORPORATION, All Rights Reserved

 IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2

Fig. 13. Maximum Transient Thermal Impedance

1

0.1
Z (th)JC - ºC / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_460P2(57)6-03-10-A

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