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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SC2246 silicon NPN power transistor. The transistor features a TO-3 package and is suitable for power switching, amplification, and driver applications with a maximum collector current of 15A. Key specifications include an absolute maximum collector-emitter voltage of 400V, collector-emitter saturation voltage below 1.2V, and DC current gain of at least 10.

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60 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SC2246 silicon NPN power transistor. The transistor features a TO-3 package and is suitable for power switching, amplification, and driver applications with a maximum collector current of 15A. Key specifications include an absolute maximum collector-emitter voltage of 400V, collector-emitter saturation voltage below 1.2V, and DC current gain of at least 10.

Uploaded by

chad reef
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2246

DESCRIPTION
·With TO-3 package
·High voltage ,high speed

APPLICATIONS
·Power switching
·Power amplification
·power driver

PINNING (See Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 450 V

VCEO Collector-emitter voltage Open base 400 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 15 A

ICM Collector current-peak 30 A

IB Base current 6 A

PT Total power dissipation Tmb=25 100 W

Tj Junction temperature 200

Tstg Storage temperature -65~200

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-mb Thermal resistance from junction to mounting base 1.0 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2246

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; L=25mH 400 V

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.2 V

VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V

VCB=450V; IE=0 1
ICBO Collector cut-off current mA
TC=125 4

ICEO Collector cut-off current VCE=400V; IB=0 5.0 mA

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA

hFE DC current gain IC=6A ; VCE=5V 10

Switching times

ton Turn-on time 1.0 µs

IC=6A ;IB1=- IB2=1.2A


ts Storage time 2.0 µs

tf Fall time 1.0 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2246

PACKAGE OUTLINE

Fig.2 Outline dimensions

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