LITE-ON

SEMICONDUCTOR STPR1010CT thru 1020CT

SUPER FAST REVERSE VOLTAGE - 100 to 200 Volts

GLASS PASSIVATED RECTIFIERS FORWARD CURRENT - 10 Amperes

TO-220AB
FEATURES
Glass passivated chip
Superfast switching time for high efficiency B L TO-220AB
M
Low forward voltage drop and high current capability C DIM. MIN. MAX.
D A 14.22 15.88
Low reverse leakage current
B 9.65 10.67
High surge capacity K A
C 2.54 3.43
Plastic package has UL flammability classification E
PIN
D 5.84 6.86
94V-0 1 2 3
E 8.26 9.28
F F - 6.35
G 12.70 14.73
G H 2.29 2.79
MECHANICAL DATA I J I 0.51 1.14
Case : TO-220AB molded plastic J 0.30 0.64
Polarity : As marked on the body N K 3.53 4.09
H H L 3.56 4.83
Weight : 0.08 ounces, 2.24 grams
M 1.14 1.40
Mounting position : Any PIN 1 PIN 2 N 2.03 2.92
PIN 3 CASE All Dimensions in millimeter

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

CHARACTERISTICS SYMBOL STPR1010CT STPR1020CT UNIT

Maximum Recurrent Peak Reverse Voltage VRRM 100 200 V

Maximum RMS Voltage VRMS 70 140 V
Maximum DC Blocking Voltage VDC 100 200 V
Maximum Average Forward
@TC=125 C I(AV) 10 A
Rectified Current
Non Repetitive Peak Forward
TP=10ms 50
Surge Current Per Diode IFSM A
Sinusoidal (JEDEC Method) TP=8.3ms 55
IF=5A@TJ =25℃ 0.975
Maximum forward Voltage
IF=5A@TJ =125℃ VF 0.925
Pulse Width =300us V
IF=10A@TJ =25℃ 1.25
Duty cycle
IF=10A@TJ =125℃ 1.20
Maximum DC Reverse Current @TJ =25 C 5
IR uA
at Rated DC Blocking Voltage @TJ =100 C 100
Typical Junction Capacitance
CJ 80 pF
per element (Note 1)

Maximum Reverse Recovery Time (Note 2) TRR 30 ns

Typical Thermal Resistance R0JC 4.0 C/W
Operating and Storage Temperature Range TJ ,TSTG -55 to +150 C

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. REV. 4, 13-Sep-2001, KTGC04
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.
RATING AND CHARACTERISTIC CURVES
STPR1010CT thru STPR1020CT

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

PEAK FORWARD SURGE CURRENT,

12
AVERAGE FORWARD CURRENT

60

10 50
TP=8.3ms
8 40

AMPERES
AMPERES

6 30 TP=10ms

4 20

2 SINGLE PHASE HALF WAVE 60Hz 10 Single Half-Sine-Wave

RESISTIVE OR INDUCTIVE LOAD (JEDEC METHOD)
0 0
25 50 75 100 125 150 175 1 2 5 10 20 50 100

CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL REVERSE CHARACTERISTICS FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100.0 100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(uA)

10.0 TJ = 100 C

TJ = 125 C
TJ = 75 C 10
1.0

TJ = 25 C
TJ = 25 C
0.1
1.0

0.01

PULSE WIDTH 300us

300ua
2% Duty cycle
.001 0.1
0 20 60 100 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000
CAPACITANCE , (pF)

100

TJ = 25 C, f= 1MHz

10
0.1 1 4 10 100
REVERSE VOLTAGE , VOLTS

REV. 4, 13-Sep-2001, KTGC04