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Descriptions: Semiconductor

This document provides information about the 2N3906N PNP silicon transistor including: 1. It is intended for general small signal and switching applications and has a complementary pair with the 2N3904N transistor. 2. The key features are a low collector-emitter saturation voltage of 0.4V max and low collector output capacitance of 4.5pF max. 3. The document provides ordering information, outline dimensions, pin connections, absolute maximum ratings, and typical electrical characteristics.

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Caleb Rodriguez
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22 views

Descriptions: Semiconductor

This document provides information about the 2N3906N PNP silicon transistor including: 1. It is intended for general small signal and switching applications and has a complementary pair with the 2N3904N transistor. 2. The key features are a low collector-emitter saturation voltage of 0.4V max and low collector output capacitance of 4.5pF max. 3. The document provides ordering information, outline dimensions, pin connections, absolute maximum ratings, and typical electrical characteristics.

Uploaded by

Caleb Rodriguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N3906N

Semiconductor
PNP Silicon Transistor

Descriptions
• General small signal application
• Switching application

Features
• Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA
• Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz
• Complementary pair with 2N3904N

Ordering Information
Type NO. Marking Package Code

2N3906N 2N3906 T0-92N

Outline Dimensions unit : mm

4.20~4.40
2.25 Max.
~
2
0

4
0
4
.

0.52 Max.
50~14.50
13.

0.90 Max.
T
2

1
4

p
y
.

1.27 Typ.
0.40 Max.
1 2 3
3.55 Typ
09~3.2
93.

PIN Connections
1. Emitter
2. Base
3. Collector

KSD-T0C039-000 1
2N3906N
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltaje VCBO -40 V
Collector-emitter voltaje VCEO -40 V
Emitter-base voltaje VEBO -5 V
Collector current IC -200 mA
Collector power dissipation PC 400 mW
Junction temperatura TJ 150 °C
Storage temperature range Tstg -55~150 °C

Electrical Characteristics Ta=25°C


Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -40 - - V
Collector cut-off current ICBO VCB=-40V, IE=0 - - -50 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 - - -50 nA
DC current gain hFE VCE=-1V, IC=-10mA 100 - 300 -
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA - - -0.4 V
Base-emitter voltaje VBE VCE=-1V, IC=-10mA - -0.73 -0.95 V
Transition frequency fT VCE=-20V, IC=-10mA - 350 - MHz
Collector output capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF
Turn on delay time td VCC=-3V, VBE(off)=-0.5V, - - 35 ns
Rise time tr IC=-10mA, IB1=-1mA - - 35 ns
Storage time tstg VCC=-3V, IC=-10mA, - - 225 ns
Fall Time tf IB1=IB2=-1mA - - 75 ns

KSD-T0C039-000 2
2N3906N
Electrical Characteristic Curves
Fig. 2 hFE - IC
Fig. 1 Pc – Ta

Fig. 3 VCE(sat) - IC

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