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Title: On The Theoretical Analysis of Memristor Based True Random Generator

Memristors exhibit stochastic switching behavior that provides an opportunity to design true random number generators (TRNGs). Previous TRNG designs used the stochastic switching time of memristors as an entropy source. However, this analysis shows that large process variations and temperature/voltage dependence can degrade the performance of such TRNGs. A new TRNG design is proposed based on the difference between stochastic high resistance states of memristor pairs, which is shown to be more robust to unfavorable conditions and process variations through probabilistic analysis.

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Mesbah
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18 views

Title: On The Theoretical Analysis of Memristor Based True Random Generator

Memristors exhibit stochastic switching behavior that provides an opportunity to design true random number generators (TRNGs). Previous TRNG designs used the stochastic switching time of memristors as an entropy source. However, this analysis shows that large process variations and temperature/voltage dependence can degrade the performance of such TRNGs. A new TRNG design is proposed based on the difference between stochastic high resistance states of memristor pairs, which is shown to be more robust to unfavorable conditions and process variations through probabilistic analysis.

Uploaded by

Mesbah
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Title: On the Theoretical Analysis of Memristor based True Random

Generator

Abstract:
Emerging nano-devices like memristors display stochastic switching
behavior which poses a big uncertainty in their implementation as the next-
generation CMOS alternative. However, this stochasticity provides an
opportunity to design circuits for hardware security. There are several
examples in literature where the stochastic switching time of memristors are
used as the source of entropy to build true random number generators
(TRNGs). Software-based pseudo-random numbers may not be random
enough for many different applications where true random numbers are a
necessity. In this work, we have analyzed traditional TRNG designs that
utilize memristors' switching time and evaluated them in varying operating
conditions and with process variation in mind. Specifically, we have
mathematically formulated how large process variation and strong
temperature and voltage dependence of memristors can degrade the
performance of these TRNGs. Depending on these analyses, we also have
proposed a new way of designing memristive TRNG based on difference
between stochastic high resistance states of a pair of memristors. Using
simple probabilistic mathematics, we have evaluated our proposed method
with existing ones and shown that our proposed design is robust in
unfavorable environmental conditions and in the presence of large process
variation where traditional TRNG bit quality degrades rapidly.

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