PD- 92005

SMPS MOSFET IRF740AS/L

HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID
l Uninterruptable Power Supply 400V 0.55Ω 10A
l High speed power switching

Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current D 2 Pak T O -26 2
l Effective Coss specified ( See AN 1001)

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V† 10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V† 6.3 A
IDM Pulsed Drain Current † 40
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 125
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt Ġ 5.9 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Typical SMPS Topologies:

l Single transistor Flyback Xfmr. Reset

l Single Transistor Forward Xfmr. Reset
( Both for US Line Input only )

Notes  through … are on page 10

www.irf.com 1
9/14/99
IRF740AS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.48 ––– V/°C Reference to 25°C, ID = 1mA†
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.55 Ω VGS = 10V, ID = 6.0A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25 VDS = 400V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 320V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 4.9 ––– ––– S VDS = 50V, ID = 6.0A†
Qg Total Gate Charge ––– ––– 36 ID = 10A
Qgs Gate-to-Source Charge ––– ––– 9.9 nC VDS = 320V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = 10V, See Fig. 6 and 13 „†
td(on) Turn-On Delay Time ––– 10 ––– VDD = 200V
tr Rise Time ––– 35 ––– ns ID = 10A
td(off) Turn-Off Delay Time ––– 24 ––– RG = 10Ω
tf Fall Time ––– 22 ––– RD = 19.5Ω,See Fig. 10 „†
Ciss Input Capacitance ––– 1030 ––– VGS = 0V
Coss Output Capacitance ––– 170 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 7.7 ––– pF ƒ = 1.0MHz, See Fig. 5†
Coss Output Capacitance ––– 1490 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 52 ––– VGS = 0V, VDS = 320V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 61 ––– VGS = 0V, V DS = 0V to 320V …†

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚† ––– 630 mJ
IAR Avalanche Current ––– 10 A
EAR Repetitive Avalanche Energy ––– 12.5 mJ

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0 °C/W
RθJA Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 10
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 40
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 10A, VGS = 0V „
trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 10A
Qrr Reverse RecoveryCharge ––– 1.9 2.9 µC di/dt = 100A/µs „†
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com
 IRF740AS/L

100 100 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
10 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10

1
4.5V
0.1
4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.0
ID = 10A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

10 2.0
TJ = 150 ° C
(Normalized)

1.5

1 1.0

TJ = 25 ° C
0.5

V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
IRF740AS/L

20
100000
ID = 10A
VGS = 0V, f = 1 MHZ VDS = 320V
Ciss = Cgs + Cgd , Cds SHORTED

VGS , Gate-to-Source Voltage (V)

VDS = 200V
Crss = Cgd 16 VDS = 80V
10000
Coss = Cds + Cgd
C, Capacitance(pF)

1000 Ciss 12

Coss
100
8

10
Crss 4

1 FOR TEST CIRCUIT

1 10 100 1000 SEE FIGURE 13
0
0 10 20 30 40
VDS, Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

10us
I D , Drain Current (A)

10

TJ = 150 ° C 100us
10

TJ = 25 ° C
1
1ms

TC = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse 10ms
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF740AS/L

10.0 RD
VDS

VGS
8.0
D.U.T.
RG
+
I D , Drain Current (A)

-VDD

6.0 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

4.0
Fig 10a. Switching Time Test Circuit
2.0 VDS
90%

0.0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20
0.10
0.1
0.05
0.02 P DM
0.01
SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF740AS/L

1400
1 5V ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 4.5A
1200 6.3A
L D R IV E R BOTTOM 10A
VDS
1000

RG D .U .T +
V 800
- DD
IA S A
20V
tp 0 .0 1 Ω 600

Fig 12a. Unclamped Inductive Test Circuit 400

V (B R )D SS
tp
200

0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)

IAS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 580
V DSav , Avalanche Voltage ( V )

VG 560

540
Charge
Fig 13a. Basic Gate Charge Waveform
520
Current Regulator
Same Type as D.U.T.

50KΩ 500
12V .2µF
.3µF

+ 480
V
D.U.T. - DS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS
IAV , Avalanche Current ( A)

3mA

IG ID
Current Sampling Resistors Fig 12d. Typical Drain-to-Source Voltage
Fig 13b. Gate Charge Test Circuit Vs. Avalanche Current
6 www.irf.com
 IRF740AS/L

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

www.irf.com 7
IRF740AS/L
D2Pak Package Outline

1 0.54 (.415 ) -B- 10 .1 6 (.4 00 )

1 0.29 (.405 ) 4 .6 9 (.18 5) R E F.
1.4 0 (.055 ) 4 .2 0 (.16 5)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 1 5.49 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 1 4.73 (.5 80) 2.2 9 (.090 )

5.28 (.2 08 ) 2.61 (.1 03 )

4.78 (.1 88 ) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 55 ) R E F.
3X
1.14 (.0 45) 0.9 3 (.0 37 ) 0.55 (.0 22) 1.1 4 (.0 45 )
3X 0.46 (.0 18)
0.6 9 (.0 27 )
5 .08 (.20 0) 0.25 (.0 10 ) M B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE AD AS SIG N M E N TS 8 .89 (.35 0)

1 D IM EN S IO N S A FTER SO LD E R D IP . 1 - G ATE
2 - D RA IN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 - SO U R C E
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
3.81 (.1 5 0)

2.5 4 (.100 )
2.0 8 (.08 2) 2X
2X

Part Marking Information

D2Pak

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK

8 www.irf.com
 IRF740AS/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262

www.irf.com 9
IRF740AS/L
Tape & Reel Information
D2Pak TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
4 .1 0 ( .1 6 1 ) 1 .5 0 (.0 5 9 )
3 .9 0 ( .1 5 3 ) 0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )

F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 1.6 0 (.4 57 )

1 .6 5 ( .0 6 5 ) 1 1.4 0 (.4 49 ) 2 4 .3 0 (.9 5 7 )
1 5 .42 (.60 9 )
2 3 .9 0 (.9 4 1 )
1 5 .22 (.60 1 )
TRL
1 .75 (.06 9 )
1 0.9 0 (.4 2 9) 1 .25 (.04 9 )
1 0.7 0 (.4 2 1) 4 .7 2 (.1 3 6)
16 .1 0 (.63 4 ) 4 .5 2 (.1 7 8)
15 .9 0 (.62 6 )

F E E D D IR E C T IO N

13.50 (.532 ) 2 7.4 0 (1.079 )

12.80 (.504 ) 2 3.9 0 (.9 41)

3 30 .00 6 0.0 0 (2.36 2)

( 14.1 73 ) M IN .
MAX.

30.4 0 (1.19 7)
N O TE S : M A X.
1 . CO M F OR M S TO E IA -418 . 26 .40 (1 .03 9) 4
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 24 .40 (.9 61 )
3 . DIM E NS IO N M EA S UR E D @ H U B.
3
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 12.6mH … Coss eff. is a fixed capacitance that gives the same charging time
RG = 25Ω, IAS = 10A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS
ƒ ISD ≤ 10A, di/dt ≤ 330A/µs, VDD ≤ V(BR)DSS, † Uses IRF740A data and test conditions
TJ ≤ 150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 9/99
10 www.irf.com