KSP44/45

KSP44/45

High Voltage Transistor

• Collector-Emitter Voltage: VCEO=KSP44: 400V
KSP45: 350V
• Collector Power Dissipation: PC (max)=625mW

1 TO-92

NPN Epitaxial Silicon Transistor 1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units
VCBO Collector-Base Voltage
: KSP44 500 V
: KSP45 400 V
VCEO Collector-Emitter Voltage
: KSP44 400 V
: KSP45 350 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 300 mA
PC Collector Power Dissipation (Ta=25°C) 625 mW
PC Collector Power Dissipation (TC=25°C) 1.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IB=0
: KSP44 500 V
: KSP45 400 V
BVCEO * Collector -Emitter Breakdown Voltage IC=1mA, IB=0
: KSP44 400 V
: KSP45 350 V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
ICBO Collector Cut-off Current
: KSP44 VCB=400V, IE=0 0.1 µA
: KSP45 VCB=320V, IE=0 0.1 µA
ICES Collector Cut-off Current
: KSP44 VCE=400V, IB=0 0.5 µA
: KSP45 VCE=320V, IB=0 0.5 µA
IEBO Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
hFE * DC Current Gain VCE=10V, IC=1mA 40
VCE=10V, IC=10mA 50 200
VCE=10V, IC=50mA 45
VCE=10V, IC=100mA 40
VCE (sat) * Collector-Emitter Saturation Voltage IC=1mA, IB=0.1mA 0.4 V
IC=10mA, IB=1mA 0.5 V
IC=50mA, IB=5mA 0.75 V
VBE (sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.75 V
Cob Output Capacitance VCB=20V, IE=0, f=1MHz 7 pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KSP44/45
Typical Characteristics

160 10
VCE=10V VCC=150V
140 IC/IB=10
Ta=25℃
120 VBE(off)=4V
hFE, DC CURRENT GAIN

100

80

t[us], TIME
60 1

40

20

0 tf

-20
td
-40
1 10 100 1000 10000 0.1
1 10 100

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Turn-On Switching Times

100 1000
VCC =150V Ta =25℃
IC /IB=10 f=1MHz
Cib[pF],Cob[pF], CAPACITANCE

Ta=25℃

10 100
Cib
t[us], TIME

ts

1 10 Cob

tf

0.1 1
1 10 100 0.1 1 10 100 1000

IC[mA], COLLECTOR CURRENT V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Turn-Off Switching Times Figure 4. Capacitance

1.0 0.5
VCE[V] COLLECTOR EMITTER VOLTAGE

Ta=25℃ Ta=25℃
IC=1mA IC=10mA IC=50mA

0.8 0.4
VBE(sat) @IC/IB=10
[V], VOLTAGE

0.6 0.3
VBE(on) @V CE=10V

0.4 0.2

0.2 0.1
V CE(sat)@I C/IB=10

0.0 0.0
0.1 1 10 100 1000 10 100 1000 10000 100000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 5. On Voltage Figure 6. Collector Saturation Region

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KSP44/45
Typical Characteristics (Continued)

100 100000
VCE=10V Valid for Duty Cycle ≤ 10%
f=10MHz
hFE, SMALL SIGNAL CURRENT GAIN

IC[mA], COLLECTOR CURRENT

Ta =25℃ 10000

10
1000 100us
1ms
1s
Tc
100 =2
5℃
1 Ta
=2
5℃
10

MSPA44
0.1 1
0.1 1 10 100 1000 1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 7. High Frequency Current Gain Figure 8. Safe Operating Area

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KSP44/45
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

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Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

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©2002 Fairchild Semiconductor Corporation Rev. I1