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Assignment 5 MOS & MOSFET Problem 1:: W C V I V VV V V V L

The document contains 7 problems about MOSFETs and MOS capacitors. Problem 1 asks about ways to increase threshold voltage in n-MOSFETs and the roles of lightly doped drain and silicidation. Problem 2 derives expressions for electric field along the MOSFET channel. Problem 3 asks to draw an energy band diagram for a p-MOSFET under certain biases. Problem 4 calculates threshold voltage and oxide field for an n-MOSFET. Problem 5 sketches band diagrams and regions of a p-MOSFET at threshold. Problem 6 sketches band diagrams for a polysilicon gate MOS capacitor. Problem 7 is unspecified with 2 marks.

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188 views

Assignment 5 MOS & MOSFET Problem 1:: W C V I V VV V V V L

The document contains 7 problems about MOSFETs and MOS capacitors. Problem 1 asks about ways to increase threshold voltage in n-MOSFETs and the roles of lightly doped drain and silicidation. Problem 2 derives expressions for electric field along the MOSFET channel. Problem 3 asks to draw an energy band diagram for a p-MOSFET under certain biases. Problem 4 calculates threshold voltage and oxide field for an n-MOSFET. Problem 5 sketches band diagrams and regions of a p-MOSFET at threshold. Problem 6 sketches band diagrams for a polysilicon gate MOS capacitor. Problem 7 is unspecified with 2 marks.

Uploaded by

hansraj
Copyright
© © All Rights Reserved
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Download as DOCX, PDF, TXT or read online on Scribd
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Assignment 5 MOS & MOSFET

Problem 1:

a. What are the various engineering ways to increase the threshold voltage of the n-
MOSFET? Explain all the factors upon which Vt is dependent? 5
b. What is the role Lightly doped drain (LDD) at channel and high doped Drain at
contact? 2
c. What is silicidation, and its effect on MOSFET characteristics? 1

Problem 2:

1. Assume the square law theory of MOSFET: 6


W nCox V 2
ID  [(VG  VT )VD  ], 0  VD  VDsat ,VG  VT
D
L 2
a. Derive an expression for the electric field vs. position along the channel in the
linear region of the operation.
b. Derive an expression for the electric field vs. position along the channel at
VD  VDsat .

Problem 3:

An equilibrium energy band diagram for a p channel MOSFET is shown below. Draw an
energy band diagram for a p channel MOSFET for VGS  0 and VDS  0 . The source and
drain are heavily doped p type and the channel is moderately doped n type. 4

Problem 4:

Consider an n channel MOSFET with the following parameters. 4

N A  1018 cm3 , n  polysilicon gate electrode with EF  EC , Oxide thickness: x0  1.5nm ,


T=300k.
a. What is the threshold voltage for this MOSFET?
b. What is the magnitude of the electric field in the oxide for VG =1V.

Problem 5:

Given an ideal p channel MOSFET maintained at room temperature: 6

a. Assuming VD  0 , sketch the MOS energy band diagram for the gate region of the
given transistor at threshold?
b. Assuming VD  0 , sketch the MOS block charge diagram for the gate region of the
given transistor at threshold?
c. Sketch the inversion region and depletion region inside the MOSFET at pinch off.
Show and label all parts of the transistor.

Problem 6: 6

Consider a poly-Si gate MOS-C where Ef-Ec= 0.25 eV in the heavily doped gate and Ef-Ec = -
0.25 eV in the nondegenerate doped silicon substrate. Assume the structure to be ideal
(other than an obvious ØMS ≠ 0) and X’ (polysilicon) = X’ (crystalline Si)

(a) Sketch EBD for Poly Si gate MOS-C under equilibrium and flat band condition.
(b) What is the metal semiconductor work function difference for same MOS-C?
(c) At Vg=0, the MOS-C will be in Accumulation, depletion or in Inversion. Explain?

Problem 7: 2

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