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13.n-p-n Transistor

This document describes the characteristics of a common emitter NPN transistor. It explains that in a common emitter configuration, the base-emitter junction is forward biased and controls input current, while the collector-base junction is reverse biased and controls output current. The document outlines procedures to obtain input characteristics by varying base voltage and output characteristics by varying collector voltage. Graphs of input characteristics show input resistance, while output characteristics show output resistance and current gain. Calculations are provided to determine these parameters from the experimental data.

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kirti
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1K views

13.n-p-n Transistor

This document describes the characteristics of a common emitter NPN transistor. It explains that in a common emitter configuration, the base-emitter junction is forward biased and controls input current, while the collector-base junction is reverse biased and controls output current. The document outlines procedures to obtain input characteristics by varying base voltage and output characteristics by varying collector voltage. Graphs of input characteristics show input resistance, while output characteristics show output resistance and current gain. Calculations are provided to determine these parameters from the experimental data.

Uploaded by

kirti
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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CHARACTERISTICS OF COMMON EMITTER N-P-N TRANSISTOR

AIM:To study the characteristics of a common emitter npn (or pnp) transistor and to find out the values of
current and voltage gains.

APPARATUS REQUIRED: An n-p-n transistor, a 3 volt battery, two high resistance rheostats, one 0-3 volt
voltmeter, one 0-30 volt voltmeter, 0-50 µA ammeter, one 0-50mA ammeter, two one way keys, wires.

THEORY: In common-emitter circuit of a transistor, emitter-base make input section and emitter collector
make output section. As usual, base junction is forward biased and collector junction is reverse biased.

Resistance offered by base junction, is called input resistance (R I). It has a very small resistance due to
forward biasing.

Resistance offered by collector junction is called output resistance (RO). it has a high value due to reverse
biasing.

Output resistance is high, therefore a high resistance can be used as load resistance (R L). Generally, RL=RO.

The ratio RL/RI= RO/RI measures resistance gain of a common emitter transistor. It is of the order of one
thousand. The current equation, Ie=Ib+Ic.

Also emitter current (Ie) divides itself into base current (Ib) and the collector current (Ic). in n-p-n transistor, Ic
is about 98% of Ie, base current Ib remains only 2% of Ie. A little change in Ib causes a large change in Ic (about
49 times). The ratio of change in collector current to corresponding change in base current, measures current
gain in common emitter transistor. It is represented by the symbol β.

(i.e) β= change in Ic/ change in Ib

For the example given above, β becomes 49. The product of current gain and resistance gains measures
voltage gain of common emitter transistor. It’s about fifty times the resistance gain.

FORMULAE USED:

Input resistance, RI=change in Vb/ change in Ib.

Output resistance, Ro= change in Vc/Ic

Resistance gain =Ro/Ri

Current gained,β=Change in IC/Change in Ib

Voltage gain=Current gain x Resistance gain

i.e Av=βxRo/RI

PROCEDURE:

1. Make circuit diagram as shown.


2. Make all connections neat, clean and tight.
3. Note least count , zero error of ammeter or voltmeter.
4. Make voltmeter readings zero in V1 and V2 and insert keys.

(A)For Input Characteristics:

5. Apply forward bias voltage on the base junction .Read base voltage(Vb) from V1 and base current Ib from µA.

6. Go on increasing Vb till Ib rises suddenly.Note corresponding values of Ib for each value of Vb.

7. Make collector voltage Vc =10V and repeat the steps 5 and 6.

8. Repeat step 7 with Vc= 20V and 30V.

9. Make all readings zero.

(B)For Output Characteristics:

10. Keep collector voltage (Vc) zero.Adjust base voltage Vb to make base current Ib=10µA.Though

Collector voltage Vc is zero , there is collector current Ic .Note it.

11. Make collector voltage 10V,20V,30V and note the corresponding collector currents.

12. Repeat steps 10 and 11 with Ib=20µA,30µA and 40µA.

13.Record your observations.

OBSERVATIONS:

1. Least count of voltmeter, V1=____V. (Vc)

2. Zero error of voltmeter, V1=____V. (Vc)

3. Least count of voltmeter, V2=____V. (Vb)

4. Zero error of voltmeter, V2=____V. (Vb)

5. Least count of milli-ammeter=____mA.

6. Zero error of milli-ammeter=____mA.

7. Least count of micro-ammeter=____µA.

8. Zero error of micro-ammeter=____µA.

(I)TABLE FOR BASE VOLTAGE AND BASE CURRENT:

S.No. Base Voltage Base current (Ib) for Collector Voltage


(Vb) in volts Vc=1V (µA) Vc=2V (µA) Vc=3V (µA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.

(II)TABLE FOR COLLECTOR VOLTAGE AND COLLECTER CURRENT

S.No. Collector Voltage Collector current (Ic) for Base Current


(Vc) in volts Ib=10µA (mA) Ib=20µA (mA) Ib=30µA (mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.

(III)TABLE FOR BASE CURRENT AND COLLECTOR CURRENT

S.No. Collector Voltage (Vb) Base Current (Ib) Collector Current (Ic)
in volts (µA) (mA)
1.
2.
3.
4.
5.
6.

CALCULATIONS:

1. Input Resistance:

From graph Vb- Ib, slope becomes larger at ends.

The (slope)-1=change in Vb/change in Ib. RI=____Ω.

2. Output Resistance:

From graph Vc- Ic, slope becomes zero at ends.

The (slope)-1=change in Vc/change in Ic. RO=____Ω.


3. Current gain:

From graph Ib- Ic, slope of the straight line is,

The current gain of common transmitter=change in Ic/change in Icβ=____(no unit)

4. Voltage gain:

Voltage gain, Av=βxRO/RI

 Av=____(no unit)

RESULT:

1.For given current emitter transistor ,

current gain, β= ____(no unit)

voltage gain, Av=____(no unit)

PRECAUTIONS:

1.All the connections should be neat , clean and tight,

2. Key should be used in circuit and is opened when not in use.

3. Forward – bias voltage beyond breakdown should not be applied.

4. Reverse bias voltage beyond breakdown shouldn’t be applied.

SOURCES OF ERROR:

1.The junction diode supplied may be faulty.

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