2009-9

PRODUCT GUIDE

MOSFETs

SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng
 C O N T E N T S
1 Features and Structures ....................................................................... 3
2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes ........ 4
2-1 MOSFET Product Lines ................................................................................... 4
2-2 Part Numbering Schemes ................................................................................ 5
3 Selection Guide (By Absolute Maximum Ratings) ............................. 6
4 Low-VDSS MOSFETs (in Small SMD Packages) ................................. 16
4-1 Packaging Options ......................................................................................... 16
• SSM Series
• TPC Series
4-2 Application Examples and Block Diagrams .................................................... 17
• Cell Phone (Power Supply Circuit)
• Notebook PC (Power Supply Circuit)
• Lithium-Ion Secondary Battery (Battery Protection Circuits)
• Motor Driver (Power Driver Circuit)
4-3 Low-VDSS MOSFET Roadmaps ..................................................................... 19
Toshiba’s MOSFET devices • Roadmap for Trench MOSFETs
• Package Options
meet the needs of a wide range 4-4 Low-VDSS, High-Speed MOSFETs ................................................................. 21
• Synchronous Rectification DC-DC Converters
of ultra-high-density applications. – Block Diagram, Timing Chart and Power Loss Factors
– Summary Results of Power Loss Simulation and Key Parameters for MOSFETs
– Efficiency Improvement by Thermally Enhanced Package and New Process Technology
– MOSBD (MOSFET with SBD)
• High-Speed MOSFET Offerings
4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection) ......... 26
• Lithium-Ion Battery Protection Circuit Trend
• MOSFET Roadmap
• Low-ON-resistance N-Channel Power MOSFETs
• Low-ON-resistance P-Channel Power MOSFETs
4-6 Semi-Power MOSFET Offerings .................................................................... 28
• Semi-Power P-Channel Single MOSFETs
• Semi-Power N-Channel Single MOSFETs
• Semi-Power Dual MOSFETs
• MOSFET with a Schottky Barrier Diode
• VS-6 Series … [Part Number: TPC6xxx]
• VS-8 Series … [Part Number: TPCF8xxx]
• PS-8 Series … [Part Number: TPCP8xxx]
• Chip LGA Series ... [Part Number: TPCL4xxx]
• STP2 Series ... [Part Number: TPCT4xxx]
• TSON Advance Series … [Part Number: TPCC8xxx]
• TSSOP Advance Series … [Part Number: TPCM8xxx]
• SOP-8 Series … [Part Number: TPC8xxx]
• SOP Advance Series … [Part Number: TPCA8xxx]
• DPAK Series ... [Part Number: TKxxPxxxM1]
4-7 Standard MOSFET Series (ID < 500 mA)....................................................... 36
• Single MOSFETs
• Dual MOSFETs
5 Low-VDSS, High-Qg MOSFETs ............................................................. 37
5-1 TO-220SM(W) Series ..................................................................................... 37
5-2 U-MOS (Trench Type) Series ......................................................................... 38
5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V) ............ 39
6 Mid- and High-VDSS MOSFETs .............................................................40
6-1 π-MOSVII Series (VDSS = 450 V to 650 V) ..................................................... 40
6-2 Super-Junction DTMOS Series (VDSS = 600 V, 650 V) ................................... 41
6-3 High-speed π-MOS Series (VDSS = 450 V to 600 V)....................................... 42
6-4 π-MOS Series................................................................................................. 43
7 MOSFET Part Numbers ........................................................................ 46
7-1 Alphanumeric Index of Part Numbers ............................................................ 46
8 Product Obsolescence ........................................................................ 53
8-1 End-of-Life Products ...................................................................................... 53
9 Packaging ............................................................................................. 55
9-1 Compact Surface-Mount Packages ................................................................ 55
9-2 Through-Hole Packages................................................................................. 66

2
 1 Features and Structures

1) No carrier storage effect; superior frequency and switching characteristics

2) Rugged and no current concentration
3) Voltage-controlled device, hence low drive power
4) Easy parallel connection

■ Toshiba MOSFETs have the following additional features:

1) Guaranteed avalanche capability................. Allows an absorber circuit to be simplified

2) Improved functioning of built-in diodes ........ Enhanced circuit design flexibility

3) High ruggedness .......................................... Increased margin for circuit design

4) High-speed switching ................................... Higher speed in end-product’s operation

5) Low R(DS)ON ................................................... Reduced end-product’s power consumption

6) Smaller packages ......................................... Reduced end-product size

7) Low drive loss ............................................... Reduced end product’s power

■ Structures of Toshiba MOSFETs

Double-Diffusion Structure
Source Gate

● π-MOS
n+
n + Toshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which
P P produces high-withstand voltage, to form channels. This structure is especially well
n–
suited to high-withstand voltage and high-current devices.
A high level of integration yields a high-performance Power MOSFET with low
n+ ON-resistance and low power loss.

Drain

Trench Structure
Source Gate

● U-MOS
n+ n+
Higher channel density is achieved by connecting channels vertically to form a
P P
U-groove at the gate region, a structure that yields a lower ON-resistance than
n– other MOSFET structures.
n+

Drain

Super-Junction Structure
Source Gate

● DTMOS
n+ n+
The super-junction structure, which has P-type pillar layers as shown left,
P P
realizes high withstand voltage and ON-resistance lower than the conventional
n
theoretical limit of silicon.
n+

Drain

3
2 Toshiba’s MOSFET Product Lines and Part Numbering

2-1 MOSFET Product Lines

SSM Series (VDSS = 12 V to 60 V)

■ Applications
Very compact and thin, the SSM Series is suitable for use in various electronic devices. ● Cell phones ● Notebook PCs
The SSM Series is available in a wide range of packages and features low voltage drive. ● Portable electronic devices ● Small-signal switching

VS and PS Series (VDSS = 12 V to 40 V)

■ Applications
Very compact and thin, the VS and PS Series are suitable for use in various ● Cell phones ● Notebook PCs
electronic devices. ● Portable electronic devices

Chip LGA and STP Series (VDSS = 20 V to 30 V)

The LGA and STP Series are housed in an ultra-small and thin package and are ■ Applications
suitable for use in lithium-ion secondary battery protection circuits in various portable ● Lithium-ion secondary battery protection circuits
electronic devices.

SOP and TSON Series (VDSS = 20 V to 250 V)

■ Applications
The SOP and TSON Series are compact and thin, and require only a small mounting area. ● Lithium-ion secondary battery protection circuits
They are suitable for lithium-ion secondary battery protection circuits and notebook PCs. ● Notebook PCs ● Portable electronic devices
● DC-DC converters

TO-220SM(W) Series (VDSS = 40 V to 150 V)

■ Applications
The TO-220SM package, which uses Cu connectors and a wide source terminal, ● Motor drivers ● Switching power supplies
realizes low ON-resistance and a high current-carrying capability.

Low-VDSS, High-Qg U-MOS Series (VDSS = 40 V to 100 V)

■ Applications
High integration is achieved using a trench technology. Low-voltage drive (VGS = 4 V) ● Motor drivers ● Solenoids and lamp drivers
is possible due to ultra-low ON-resistance.

U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)

■ Applications
Fabricated using a trench technology, the U-MOS Series is ideal for synchronous ● Switching power supplies ● AC adapters
rectification on the secondary side of power supply circuits. ● Motor drivers

New π-MOSVII Series (VDSS = 450 V to 650 V)

The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced ■ Applications
capacitances due to optimized chip design and is available with a greatly wider ● Switching power supplies ● AC adapters
range of electrical characteristics.

Super-Junction DTMOS Series (VDSS = 600, 650 V)

■ Applications
The super-junction DTMOS Series achieves low ON-resistance and low gate charge ● Switching power supplies ● AC adapters
(Qg) due to the use of the latest super-junction structure. ● Motor drivers

High-Speed π-MOS Series (VDSS = 450 V to 600 V)

The new High-Speed π-MOS Series achieves higher switching speed than the ■ Applications
well-proven π-MOS Series. Two series are available: high-speed switching series ● Inverters ● Switching power supplies
and high-speed diode series. ● Motor drivers ● AC adapters

4
Schemes

2-2 Part Numbering Schemes

■ Small-Signal MOSFET (SSM) Series

SSM 3 K 101 TU
Package
Serial number of the products <3-pin> <4-pin> <6-pin>
F: S-Mini CT: CST4 FU: US6
Polarity and internal configuration FU: USM FE: ES6
K: N-channel, single FS: SSM TU: UF6
<5-pin>
J: P-channel, single FV: VESM CTD: CST6D
T: TSM F: SMV
N: N-channel, dual
TU: UFM FU: USV
P: P-channel, dual FE: ESV
CT: CST3
L: N-channel and P-channel (dual) TU: UFV
CTB: CST3B
E: N-channel and P-channel
(pre-wired as a load switch)
H: N-channel and SBD
G: P-channel and SBD

Pin count

Small-Signal MOSFET

■ Multi-Pin Series ■ New Series ■ Conventional Series

TPCM8 0 01 -H TK 55 A 10 J 1 2SK ✽ ✽ ✽ ✽
H: High-speed type Additional information N-channel MOS
None: Low-ON-resistance type 1: Low-capacitance type
3: Low-ON-resistance type
Serial number of the products
0: N-channel, single 4: N-channel and P-channel, dual
5: Fast body diode type 2SJ ✽ ✽ ✽ ✽
1: P-channel, single A: N-channel and SBD P-channel MOS
2: N-channel, dual B: P-channel and SBD Series
3: P-channel, dual J: P-channel and NPN C: π-MOSVI K: U-MOSIV
D: π-MOSVII T: DTMOSI
TPC6: VS-6 Series J: U-MOSIII U: DTMOSII
TPCF8: VS-8 Series M: U-MOSVI
TPCP8: PS-8 Series
TPCC8: TSON Advance Series
Voltage: 10% of the VDSS
TPCS8: TSSOP-8 Series
TPCM8: TSSOP Advance Series Package
TPC8: SOP-8 Series A: TO-220SIS
TPCA8: SOP Advance Series D: TO-220(W)
TPCT4: STP Series F: TO-220SM(W)
TPCL4: Chip LGA J: TO-3P(N)
X: TFP
P: DPAK
Q: New PW-Mold2

Current rating

TK: N-channel
TJ: P-channel

5
 3 Selection Guide (By Absolute Maximum Ratings)

VDSS (V) VDSS (V)

ID (A)
12 20 24 30 40 50 60 100 150 180 200 250 400 450 500 525 550 600 650 ID (A)
2SJ343(50)➀
0.05 0.05
2SJ344(50)➀
SSM3K04FU(12)➂
SSM3K16FU(15)➂
SSM3J16FU(45)➂
SSM3K04FS(12)➂
SSM3K15F(7)➂
SSM3K16FS(15)➂
SSM3J15F(32)➂
SSM3J16FS(45)➂
SSM3K15FU(7)➂
SSM3J35FS(44)➅
SSM3J15FU(32)➂
SSM3K03FV(12)➂
SSM3K15FS(7)➂
SSM3K04FV(12)➂
SSM3J15FS(32)➂
SSM3K16FV(15)➂
SSM3K15FV(7)➂
SSM3J16FV(45)➂
SSM3J15FV(32)➂
SSM3J35MFV(44)➅
SSM3K15CT(7)➂
SSM3K16CT(15)➂
SSM3J15CT(32)➂
SSM3J16CT(45)➂
SSM6N15FU(7)➂ SSM3K17FU(40)➁
0.1 SSM3J35CT(44)➅
SSM6P15FU(32)➂ SSM6N17FU(40)➁
0.1
SSM6N04FU(12)➂
SSM5N15FU(7)➂
SSM6N16FU(15)➂
SSM5P15FU(32)➂
SSM6P16FU(45)➂
SSM6N15FE(7)➂
SSM6P35FU(44)➅
SSM6P15FE(32)➂
SSM6N03FE(12)➂
SSM5N15FE(7)➂
SSM6N16FE(15)➂
SSM5P15FE(32)➂
SSM6P16FE(45)➂
SSM3K44FS(7)➅
SSM6L16FE(15)➂
SSM3K44MFV(7)➅
SSM6P35FE(45)➅
SSM6N44FU(7)➅
SSM5N16FU(15)➂
SSM6N44FE(7)➅
SSM5P16FU(45)➂
SSM5N03FE(12)➂
SSM5N16FE(15)➂
SSM5P16FE(45)➂
SSM3K35FS(20)➅
SSM3K35MFV(20)➅
SSM3K35CT(20)➅
0.18 SSM6N35FU(20)➅ 0.18
SSM6L35FU(20)➅
SSM6N35FE(20)➅
SSM6L35FE(20)➅

SSM3K7002BF(3.3)➅ SSM6N7002BFU(3.3)➅
SSM3K7002BFS(3.3)➅ SSM6N7002FU(3.3)➂
2SJ305(4)➀
SSM3J05FU(4)➂ SSM3K7002F(3.3)➂ SSM6N7002AFU(3.3)➁
2SK2009(2)➀
0.2 SSM6P05FU(4)➂
SSM3J09FU(4.2)➂
SSM3K7002AF(3.3)➁ 2SJ168(2)➀ 0.2
SSM5P05FU(4)➂ SSM3K7002FU(3.3)➂ 2SK1062(1)➀
SSM6P09FU(4.2)➂
SSM3K7002AFU(3.3)➁
SSM6N7002BFE(3.3)➅

0.25 SSM6N37CTD(5.6)➅ 0.25

SSM3J36TU(3.6)➅
SSM3J36FS(3.6)➅
0.33 SSM3J36MFV(3.6)➅ 0.33
SSM6P36TU(3.6)➅
SSM6P36FE(3.6)➅

SSM6L05FU(1.2)➂
SSM6L09FU(1.2)➂
SSM6N05FU(1.2)➂
0.4 SSM3K05FU(1.2)➂
SSM6N09FU(1.2)➂ 0.4
SSM3K09FU(1.2)➂
SSM5N05FU(1.2)➂
SSM4K27CT(0.205)➅
SSM6L10TU(0.145)➅
SSM6L11TU(0.145)➅
SSM6L12TU(0.145)➅
SSM6N25TU(0.145)➅
SSM6N36TU(1.52)➅
SSM6P25TU(0.26)➅
SSM6P26TU(0.23)➅ 2SK2998 (20)➁
SSM6N24TU(0.145)➅
0.5 SSM6J25FE(0.26)➅
SSM6K24FE(0.145)➅
2SK3302 (18)➁ 0.5
SSM6J26FE(0.23)➅ 2SK3471 (18)➁
SSM6K25FE(0.145)➅
SSM6L36TU(1.52)➅
SSM3K36FS(1.52)➅
SSM3K36MFV(1.52)➅
SSM3K36TU(1.52)➅
SSM6N36FE(1.52)➅
SSM6L36FE(1.52)➅
SSM6N43FU(1.52)➅
SSM3K43FS(1.52)➅

0.65 SSM6J06FU(0.5)➂ 0.65

0.72 SSM6P41FE(0.3)➅ 0.72
0.77 SSM6N42FE(0.26)➅ 0.77
SSM6L13TU(0.143)➅
SSM6N29TU(0.143)➅
0.8 SSM6P28TU(0.234)➅
SSM6J07FU(0.8)➂ 0.8
SSM6J205FE(0.234)➅

Legend Notes:
Product series ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI Package PW-Mini VS-8 VS-6 ♠ PS-8 STP TO-92MOD PW-Mold New PW-Mold TSON Advance New PW-Mold2 DP TPS TSSOP Advance TSSOP-8 SOP-8 ( ) = RDS(ON) max ✽ = 1.8-V drive P = P-ch NS = N-ch + SBD PD = P-ch + Driver
PS = P-ch + SBD (load switch)
➃ : L2-π-MOSV ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII SOP-8 Lead Clamp SOP Advance TO-220NIS TO-220SIS TO-220AB TO-220(W) TFP TO-220FL/SM TO-220SM(W) TO-3P(N) TO-3P(N)IS TO-3P(L) Chip LGA $ = 10-V drive
# = 2.5-V drive
= High-speed diode
N = N-ch
CN = Complementary N-ch
CP = Complementary P-ch [ ] = Under development
➇ : π-MOSIV ➈ : DTMOSI ➉ : DTMOSII S-Mini TSM USM UFM SSM VESM CST3 CST3B CST4 SMV US6 UF6 ES6 CST6D USV UFV ESV

6 7
 3 Selection Guide (By Absolute Maximum Ratings)

VDSS (V) VDSS (V)

12 20 24 30 40 50 60 100 150 180 200 250 400 450 500 525 550 600 800 900 1000 ID (A)
ID (A)
PS SSM5G02TU (0.16)➅ SSM3J111TU (0.48)➅ PS SSM5G01TU (0.8)➅ 2SJ360 (0.73)➃ 2SK2963 (0.7)➃ 2SK3670 (1.7) 2SJ313 (5.0) 2SK2992 (3.5)➁ CP TPC8404(2.55)➁ 2SK3498 (5.5)➁ 2SK4023 (4.6)➁ 2SK3371 (9)➁ 2SK2733 (9.0)➀
PS SSM5G04TU (0.24)➅ 2SJ507 (0.7)➃ 2SK2962 (0.7)➃ 2SJ338 (5.0) CN TPC8404(1.7)➁ 2SK3374 (4.6)➁ 2SK4026 (9)➁ 2SK2845 (9)➀
1 PD SSM6E01TU (0.16)➅ 2SJ508 (1.9)➃ 2SK2013 (5.0) 2SK3472 (4.6)➁ 2SK3301 (20)➀ 1
2SJ509 (1.9)➃ 2SK2162 (5.0)
1.1 SSM6K06FU (0.16)➂ SSM3J112TU (0.79)➅ 1.1
SSM6J23FE (0.16)➅ SSM3K106TU (0.53)➆
SSM6P54TU (0.228)➅
1.2 NS SSM5H07TU (0.54)➆ 1.2
SSM6K31FE (0.54)➆
SSM6K30FE (0.42)➆
SSM6J08FU (0.18)➅ SSM6J207FE (0.491)➅ TPCS8004-H (0.8)➅
1.3 PS TPCP8BA1 (0.18)➅
1.3
NS SSM5H03TU (0.3)➅ SSM6K22FE (0.17)➅ SSM3J118TU (0.48)➅
SSM6P40TU (0.403)➅
1.4 PS SSM5G11TU (0.403)➅ 1.4
NS SSM5H01TU (0.45)➅
SSM6K210FE (0.371)➅

PS SSM5G09TU (0.13)➅ SSM3K107TU (0.41)➆ SSM3J02T (0.5)➂

SSM6P39TU (0.213)➅ SSM3K128TU (0.36)➅
1.5 NS SSM5H05TU (0.16)➅ PS SSM5G10TU (0.213)➅
1.5
NS SSM5H08TU (0.16)➅ SSM6K07FU (0.22)➂

SSM6N42FE (0.252)➅ SSM3J313T (0.268)➅

NS SSM5H10TU (0.119)➅ NS SSM5H11TU (0.182)➅
NS TPCP8AA1 (0.105)➅ SSM6L40TU (0.182)➅
1.6 SSM6L39TU (0.119)➅ SSM6N40TU (0.182)➅
1.6
SSM6N39TU (0.119)➅
SSM6K08FU (0.105)➅
SSM3J113TU (0.169)➅ SSM3J01T (0.4)➂ TPCS8008-H (0.58)➁
1.7 SSM3J305T (0.477)➅
1.7
PD SSM6E03TU (0.144)➅ SSM3J108TU (0.158)➅ TPC8012-H (0.4)➅
SSM3J114TU (0.149)➅
1.8 PD SSM6E02TU (0.136)➅
1.8
SSM6J53FE (0.136)➅
NS SSM5H12TU (0.133)➅ TPCS8007-H (0.45)➁
1.9 SSM6K208FE (0.133)➅
1.9
SSM3J109TU (0.13)➅ SSM3J117TU (0.225)➅ 2SK2615 (0.3)➃ 2SJ610 (2.55)➁ 2SK3757 (2.45)➂ 2SK2599 (3.2)➁ 2SK2846 (5.0)➁
SSM3K122TU (0.123)➅ SSM3K127TU (0.123)➅ 2SK2961 (0.3)➃ 2SK3766 (2.45)➂ 2SK3373 (3.2)➁ 2SK2865 (5.0)➁
SSM6K405TU (0.126)➅ SSM6J402TU (0.225)➅ 2SK3658 (0.3)➃ 2SK3767 (4.5)➂
2 SSM6J206FE (0.13)➅ SSM6K407TU (0.44)➁ 2SK4002 (5)➁ 2
SSM6K204FE (0.126)➅ SSM6K32TU (0.44)➁ TK2Q60D (4.3)➆
SSM3J46CTB (0.103)➅
SSM3J325F (0.155)➅
2.1 SSM3K116TU (0.1)➅ TPCS8009-H (0.35)➁ 2.1
SSM3J115TU (0.098)➅ SSM3K105TU (0.2)➂ TPCP8003-H (0.18)➅
2.2 SSM3K101TU (0.103)➅ TPC8214-H (0.18)➅
2.2
SSM3J110TU (0.094)➅ SSM6K202FE (0.085)➅
2.3 SSM3J304T (0.127)➅
2.3
SSM3J306T (0.225)➅
2.4 SSM3K124TU (0.12)➆
2.4
SSM6J50TU (0.064)➅ SSM3K119TU (0.074)➅ SSM3K318T (0.145)➅ 2SJ567 (2.0)➁ TK3A60DA (2.8)➆ 2SK3566 (6.4)➇
2.5 SSM3K02T (0.2)➂ 2SJ680 (2.0)➁ 2.5
SSM6J401TU (0.145)➅
2.6 SSM3K102TU (0.071)➅ 2.6
SM3J312T (0.091)➅ TPC6105 (0.11)➅ SSM3J14T (0.17)➅
TPCF8301 (0.11)➅
2.7 TPCF8B01 (0.11)➅
2.7
TPCF8103 (0.11)➅
2.8 SSM6K203FE (0.061)➅ 2.8
2.9 SSM3K303T (0.12)➆ 2.9
SSM3J13T (0.07)➅ TPCF8201 (0.049)➅ SSM3K12T (0.175)➆ 2SK2200 (0.35)➃ 2SK3462 (1.7)➁ 2SK2862 (3.2)➁ 2SK4003 (2.2)➂ 2SK2603 (3.6)➀ 2SK2608 (4.3)➀
SSM6J21TU (0.05)➅ TPCF8A01 (0.049)➅ SSM6K34TU (0.077)➅ 2SK2201 (0.35)➃ 2SK4022 (1.7)➁ (Short lead) 2SK2883 (3.6)➀ 2SK2719 (4.3)➀
TPCF8302 (0.059)➅ NS SSM5H14F (0.078)➅ 2SK4018 (0.35)➃ 2SK3975 (2.2)➂ 2SK3564 (4.3)➇
3 TPCF8303 (0.058)➅
3
SSM3K104TU (0.056)➅
SSM6K404TU (0.055)➅
SSM3K121TU (0.048)➅ TPCF8402 (0.077)➅
3.2 SSM6K211FE (0.047)➅ TPCF8304 (0.072)➅ 3.2
SSM3K01T (0.12)➂
3.3 SSM6J212FE (0.0434)➅ 3.3
3.4 TPCP8402 (0.072)➅ TPCP8403 (0.070)➅ 3.4
SSM3K301T (0.056)➅ SSM3J314T (0.1)➅ TK4A55DA (2.45)➆ 2SK3085 (2.2)➁
3.5 SSM3J327F (0.095)➅ 2SK3567 (2.2)➂ 3.5
TK4A60DA (2.2)➆
3.6 SSM3J317T (0.107)➅ 3.6
3.8 TPCP8303 (0.04)➅ TPC8218-H (0.057)➅ 3.8
3.9 TPC6006-H (0.075)➅ 3.9
SSM6J51TU (0.054)➅ SSM3J120TU (0.038)➅ TPCF8402 (0.05)➅ TPCA8008-H (0.58)➁ TK4A50D (2.0)➆ TK4A55D (1.9)➆ TK4A60D (1.7)➆ 2SK3798 (3.5)➇ 2SK1119 (3.8)
SSM6K18TU (0.04)➅ TPCP8404 (0.05)➅ 2SK1930 (3.8)
4 TPCP8404 (0.05)➅ 4
SSM3K316T (0.065)➅
SSM3K14T (0.067)➅

Notes:
Legend Product series ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI Package PW-Mini VS-8 VS-6 ♠ PS-8 STP TO-92MOD PW-Mold New PW-Mold TSON Advance New PW-Mold2 DP TPS TSSOP Advance TSSOP-8 SOP-8 ( ) = RDS(ON) max ✽ = 1.8-V drive P = P-ch NS = N-ch + SBD PD = P-ch + Driver
PS = P-ch + SBD (load switch)
➃ : L2-π-MOSV ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII SOP-8 Lead Clamp SOP Advance TO-220NIS TO-220SIS TO-220AB TO-220(W) TFP TO-220FL/SM TO-220SM(W) TO-3P(N) TO-3P(N)IS TO-3P(L) Chip LGA $ = 10-V drive
# = 2.5-V drive
= High-speed diode
N = N-ch
CN = Complementary N-ch
CP = Complementary P-ch [ ] = Under development
➇ : π-MOSIV ➈ : DTMOSI ➉ : DTMOSII S-Mini TSM USM UFM SSM VESM CST3 CST3B CST4 SMV US6 UF6 ES6 CST6D USV UFV ESV

8 9
 3 Selection Guide (By Absolute Maximum Ratings)

VDSS (V) VDSS (V)

ID (A)
12 20 24 30 40 50 60 100 150 180 200 250 400 450 500 525 550 600 650 700 800 900 1000 ID (A)
SSM3K123TU (0.028)➅ TPCP8201 (0.05)➅
4.2 SSM6K403TU (0.028)➅ TPCP8402 (0.077)➅ 4.2
SSM3K320T (0.077)➅

4.4 SSM3J130TU (0.0258)➅ SSM6K406TU (0.0385)➅ 4.4

TPC6107 (0.055)➅ TPC6108 (0.06)➅ 2SK3342 (1.0)➁
4.5 TPC8405 (0.033)➅ 2SK4021 (1.0)➁ 4.5
4.6 SSM3J129TU (0.046)➅ 4.6
SSM3K309T (0.031)➅ TPCP8403 (0.040)➅
4.7 TPCP8203 (0.040)➅ 4.7
4.8 TPCP8103-H (0.040)➅ 4.8
SSM3J132TU (0.0178)➅ TPC8208 (0.05)➅ TPCS8209 (0.05)➅ 2SK2989 (0.15)➃ 2SJ668 (0.17)➅ 2SK2399 (0.23)➃ 2SK3205 (0.52) 2SJ407 (1.0)➁ 2SJ512 (1.25)➁ 2SK2991 (1.5)➁ TK5A55D (1.88)➆ TK5A65D (1.45)➆ 2SK2274 (1.7) 2SK2884 (2.2)➀ 2SK3565 (2.5)➇ 2SK1359 (3.8)
TPCS8209 (0.03)➅ TPCF8001 (0.032)➅ 2SJ537 (0.19)➃ 2SJ681 (0.17)➅ 2SK2400 (0.23)➃ 2SK2381 (0.8)➁ 2SK3466 (1.5)➁ 2SK3700 (2.5)➇
TPCS8210 (0.03)➅ TPC8104-H (0.065)➅ 2SJ378 (0.19)➃ 2SK2835 (0.8)➁ 2SK3742 (2.5)➇
2SK4019 (0.23)➃ 2SK3863 (1.5)➂
TPCS8303 (0.021)➅ TPC6007-H (0.054)➅ 2SJ669 (0.17)➅ 2SK2920 (0.8)➁
2SK4020 (0.8)➁ 2SK4103 (1.5)➂
5 TPCS8302 (0.035)➅ TPC6109-H (0.059)➅ 2SJ438 (0.19)➃ 2SK3417 (1.8)➁ 5
TPCP8301 (0.031)➅ 2SK2229 (0.16)➃ 2SK3868 (1.7)➂
TPCP8302 (0.033)➅ 2SK4017 (0.1)➅
TK5A50D (1.5)➆
SSM3J307T (0.031)➅ 2SK4033 (0.1)➅
SSM3K310T (0.028)➅ TPC8213-H (0.05)➅
5.2 SSM3J321T (0.046)➅ 5.2
TPC8401 (0.038)➅ TPC6111 (0.04)➅ TPC8211 (0.036)➅ TPCA8010-H (0.45)➁ 2SK2838 (1.2)➁ TK6A55DA (1.48)➆
5.5 TPC6103 (0.035)➅ TPCP8202 (0.023)➅ 2SK2679 (1.2)➁ 5.5
5.6 TPCP8101 (0.030)➅ SSM3J326T (0.0457)➅ 5.6
TPCF8101 (0.028)➅ TPCT4201 (0.031)➅ TPCL4203 (0.036)➅ TPCT4202 (0.038)➅ 2SJ516 (0.8)➁ TK6A50D (1.48)➆ TK6A53D (1.3)➆ 2SK2602 (1.25)➁ TK6A65D (1.11)➆ 2SK4013 (1.7)➇ 2SK4014 (2.0)➇
TPCT4203 (0.031)➅ TPCT4204 (0.038)➅ TK6P53D (1.3)➆ 2SK2777 (1.25)➁
TPC6004 (0.024)➅ TPC6011 (0.020)➅ 2SK3312 (1.25)➁
TPCF8102 (0.030)➅ TPC6005 (0.028)➅ TK6A60D (1.25)➆
TPC8207 (0.02)➅ TPCP8J01 (0.035) (-32V)➅ 2SK3947 (1.4)➂
TPCS8211 (0.024)➅ TPCF8104 (0.028)➅
6 TPCS8204 (0.017)➅ TPCS8214 (0.135)➅ 6
TPCS8102 (0.02)➅ TPC8A01 (0.025)➅
TPCS8302 (0.035)➅ TPC8212-H (0.021)➅
TPCS8212 (0.024)➅ TPC8405 (0.026)➅
TPCS8208 (0.017)➅ SSM3K315T (0.0415)➅
TPCS8213 (0.013)➅ TPCL4202 (0.04)➅
TPCL4201 (0.031)➅ SSM3K131TU (0.0415)➅
TPC8216-H (0.020)➅ 2SK3879 (1.7)➇
6.5 6.5
2SK3880 (1.7)➇
TPCF8001 (0.023)➅ TPC8406-H (0.027)➅ TPCA8009-H (0.35)➁ 2SK3633 (1.7)➇ 2SK4115 (2.0)➇ 2SK1365 (1.8)
7 TPCF8002 (0.023)➅ TPC8406-H (0.03)➅
7
7.2 TPCP8102 (0.018)➅ TPCP8001-H (0.016)➅ 7.2
TPCA8020-H (0.027)➅ 2SK2417 (0.5)➁ TK8A55DA (1.07)➆ TK8A60DA (1.0)➆
TPC8022-H (0.027)➅ 2SK2914 (0.5)➁
7.5 TPC8116-H (0.03)➅
7.5
TPCA8107-H (0.03)➅
TPC8210 (0.015)➅ TPC8110 (0.025)➅ 2SK2542 (0.85)➁ TK8A65D (0.84)➆ 2SK2606 (1.2)➀ 2SK2847 (1.4)➀ 2SK2613 (1.7)➀
TPC8021-H (0.017)➅ 2SK2776 (0.85)➁ 2SK3799 (1.3)➇
8 2SK3538 (0.85)➁ 8
TK8A50D (0.85)➆
2SK4042 (0.97)➂

8.3 TPCP8004 (0.009)➅ 8.3

8.5 TPC8A01 (0.018)➄ TK9A55DA (0.86)➆ 2SK3017 (1.25)➀ 8.5
TPCP8006 (0.01)➅ TPC8053-H (0.0225)➅ 2SK2350 (0.4)➁ 2SK2952 (0.55)➁ 2SK2607 (1.2)➀ 2SK3473 (1.6)➇
9 9
2SK3878 (1.3)➇
9.5 SSM6J409TU (0.0221)➅ 9.5
TPC8115 (0.01)➅ TPC8109 (0.02)➅ 2SK3669 (0.125)➆ 2SJ200 (0.83) 2SK2841 (0.55)➁ 2SK3309 (0.65)➁ 2SK2601 (1.0)➁ 2SK2866 (0.75)➁ 2SK3265 (1.0)➇ 2SK2968 (1.25)➀
TPC8119 (0.012)➅ 2SK1529 (0.83) 2SK2949 (0.55)➁ 2SK3310 (0.65)➁ TK10A50D (0.72)➆ 2SK2889 (0.75)➁ 2SK3453 (1.0)➇
TPC8A05-H (0.012)➅ 2SK3497 (0.15) 2SK3869 (0.68)➂ 2SK3438 (1.0)➁
2SJ618 (0.37)
10 2SK3437 (1.0)➁ 10
2SK3399 (0.75)➁
TK10A60D (0.75)➆
2SK4015 (0.86)➂

Legend Notes:
Product series ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI Package PW-Mini VS-8 VS-6 ♠ PS-8 STP TO-92MOD PW-Mold New PW-Mold TSON Advance New PW-Mold2 DP TPS TSSOP Advance TSSOP-8 SOP-8 ( ) = RDS(ON) max ✽ = 1.8-V drive P = P-ch NS = N-ch + SBD PD = P-ch + Driver
PS = P-ch + SBD (load switch)
➃ : L2-π-MOSV ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII SOP-8 Lead Clamp SOP Advance TO-220NIS TO-220SIS TO-220AB TO-220(W) TFP TO-220FL/SM TO-220SM(W) TO-3P(N) TO-3P(N)IS TO-3P(L) Chip LGA $ = 10-V drive
# = 2.5-V drive
= High-speed diode
N = N-ch
CN = Complementary N-ch
CP = Complementary P-ch [ ] = Under development
➇ : π-MOSIV ➈ : DTMOSI ➉ : DTMOSII S-Mini TSM USM UFM SSM VESM CST3 CST3B CST4 SMV US6 UF6 ES6 CST6D USV UFV ESV

10 11
 3 Selection Guide (By Absolute Maximum Ratings)

VDSS (V) VDSS (V)

20 30 40 50 60 75 80 100 150 200 250 300 450 500 525 550 600 900/1000 ID (A)
ID (A)
N TPC8025 (0.009)➅ N TPC8050-H (0.0145)➅ 2SK2965 (0.26)➁ TK11A55D (0.63)➆ TK11A60D (0.65)➆
N TPC8021-H (0.017)➅
N TPC8014 (0.014)➅
P TPC8111 (0.012)➅
P TPC8113 (0.01)➅
P TPCS8105 (0.0135)➅
11 P TPCS8104 (0.012)➅
11
N TPC8030 (0.0095)
N TPC8031-H (0.0133)➅
N TPCP8005-H (0.0129)➅
P TPC8121 (0.012)➅
P TPC8123 (0.0090)➅

N TPC8037-H (0.0114)➅ N TPC8052-H (0.0115)➅ 2SJ201 (0.625) 2SK3068 (0.52)➁ TK12A53D (0.58)➆ TK12J55D (0.57)➆ 2SK2699 (0.65)➁ 1000V: 2SK1489 (1.0)
2SJ380 (0.21)➃
N TPC8038-H (0.0114)➅ 2SK1530 (0.625) 2SK3398 (0.52)➁ TK12X53D (0.58)➆ TK12A60U (0.4)➉
12 NS TPC8A06-H (0.0101)➅ TK12A50D (0.52)➆ TK12D60U (0.4)➉ 12
2SK3313 (0.62)➁ TK12J60U (0.4)➉
TK12A60D (0.55)➆
12.5 TK13A50DA (0.47)➆ 12.5
N TPC8041 (0.007)➅ N TPC8049-H (0.0107)➅ N TPC8051-H (0.0097)➅ 2SK2508 (0.25)➁ 2SK3743 (0.4)➁ TK13A50D (0.4)➆ TK13A60D (0.43)➆ 900V: 2SK4207 (0.95)
N TPC8026 (0.0066)➅ 2SK2598 (0.25)➁ 2SK3403 (0.4)➁ 2SK4016 (0.5)➂
P TPC8107 (0.007)➅ 2SK3544 (0.4)➁
13 P TPC8112 (0.006)➅ TK13A45D (0.46)➆ 13
P TPC8118 (0.007)
N TPCC8003-H (0.0169)➅
N TPC8040-H (0.0097)➅
2SJ304 (0.12) 2SK2916 (0.4)➁ TK14A55D (0.37)➆ 2SK3903 (0.44)➂
14 2SJ312 (0.12)
14
N TPC8032-H (0.0065)➅ TPCA8053-H (0.0223)➅ 2SK2382 (0.18)➁ TK15A50D (0.3)➆ 2SK2953 (0.4)➁
P TPCC8102 (0.0189)➅ 2SK2401 (0.18)➁ 2SK3314 (0.49)➁ TK15A60U (0.3)➉
TK15J50D (0.4)➆
15 TK15D60U (0.3)➉ 15
TK15J60U (0.3)➉
TK15A60D (0.37)➆
NS TPC8A02-H (0.0056)➅ N TPC8047-H (0.0076)➅ N TPC8048-H (0.0069)➅ 2SJ412 (0.21)➃ TK16J55D (0.37)➆
16 2SJ619 (0.21)➃
16
N TPC8033-H (0.0053)➅ 2SK3935 (0.25)➂ 2SK3905 (0.31)➂
17 NS TPC8A03-H (0.0056)➅ 17
N TPC8039-H (0.006)➅
P TPC8114 (0.0045)➅ N TPC8045-H (0.0039)➅ 2SJ464 (0.12)➃ 2SK2882 (0.12)➁ 2SK2917 (0.27)➁
N TPC8027 (0.0027)➅ N TPC8046-H (0.0057)➅ 2SJ620 (0.09)➃ 2SK3387 (0.12)➃ TK18A50D (0.27)➆
N TPC8028 (0.0043)➅
N TPC8029 (0.0038)➅ TPCA8006-H (0.067)
N TPC8034-H (0.0035)➅
N TPC8042 (0.0034)➅
18 P TPC8117 (0.0039)➅ 18
N TPC8036-H (0.0045)➅
NS TPC8A04-H (0.0036)➅
P TPC8120 (0.0032)➅
P TPCC8103 (0.012)➅
N TPC8035-H (0.0032)➅
N TPC8060-H (0.0037)➅
19 2SK3904 (0.26)➂ 19
NS TPCM8A05-H (0.0129)➅ N TPCA8052-H (0.0115)➅ 2SK2614 (0.046)➃ 2SJ349 (0.045)➃ 2SK2391 (0.085)➃ 2SK2993 (0.105)➁ TK20J50D (0.27)➆ 2SK3911 (0.32)➂
NS TPCA8A05-H (0.0129)➅ 2SJ401 (0.045)➃ TJ20A10M3 (0.090)➅ 2SK3445 (0.105)➁ TK20A60U (0.19)➉
20 N TPCM8001-H (0.0095)➅ 2SK2782 (0.055)➃ TK20D60U (0.19)➉ 20
2SK3994 (0.105)➁
TK20J60U (0.19)➉
2SK3906 (0.33)➂

N TPCM8003-H (0.0129)➅
21 21
NS TPCC8A01-H (0.0099)➅

N TPCC8001-H (0.0083)➅
22 N TPCC8002-H (0.0083)➅ TPCA8022-H (0.026)➅ 22
N TPCC8006-H (0.008)➅

N TPCA8040-H (0.0094)➅ 2SK3907 (0.23)➂

23 2SK3936 (0.25)➂
23

Legend Notes:
Product series ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI Package PW-Mini VS-8 VS-6 ♠ PS-8 STP TO-92MOD PW-Mold New PW-Mold TSON Advance New PW-Mold2 DP TPS TSSOP Advance TSSOP-8 SOP-8 ( ) = RDS(ON) max ✽ = 1.8-V drive P = P-ch NS = N-ch + SBD PD = P-ch + Driver
PS = P-ch + SBD (load switch)
➃ : L2-π-MOSV ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII SOP-8 Lead Clamp SOP Advance TO-220NIS TO-220SIS TO-220AB TO-220(W) TFP TO-220FL/SM TO-220SM(W) TO-3P(N) TO-3P(N)IS TO-3P(L) Chip LGA $ = 10-V drive
# = 2.5-V drive
= High-speed diode
N = N-ch
CN = Complementary N-ch
CP = Complementary P-ch [ ] = Under development
➇ : π-MOSIV ➈ : DTMOSI ➉ : DTMOSII S-Mini TSM USM UFM SSM VESM CST3 CST3B CST4 SMV US6 UF6 ES6 CST6D USV UFV ESV

12 13
 3 Selection Guide (By Absolute Maximum Ratings)

VDSS (V) VDSS (V)

20 30 40 50 60 75 80 100 150 200 250 300 450 500 525 550 600 900/1000 ID (A)
ID (A)
N TPCM8004-H (0.011)➅ N TPCA8050-H (0.0142)➅
24 N TPCA8030-H (0.011)➅ 24
N TPCA8031-H (0.011)➅
P TPCM8102 (0.0077)➅ 2SK2507 (0.046)➃ 2SK2232 (0.046)➃ TK25A10K3 (0.040)➅ 2SK3444 (0.082)➁ 2SK1544 (0.2)
25 N TPCM8006 (0.007)➅ 2SK2311 (0.046)➃ 2SK3625 (0.082)➁ 25
N TPCC8008 (0.0068)➅ N TPCA8016-H (0.021)➅
26 N TPCC8005-H (0.0064)➅ 2SK3846 (0.016)➃ 26
N TPCC8007 (0.0046)➅ 2SK2314 (0.085)➃
27 2SK2789 (0.085)➃
27

28 N TPCA8049-H (0.0104)➅ N TPCA8051-H (0.0094)➅ 28

N TPCA8018-H (0.0062)➅ N TPCA8014-H (0.009)➅ 2SJ334 (0.038)➃ 2SK3443 (0.055)➁ 2SK3176 (0.052)➁ 2SK2967 (0.068)➁
30 N TPCM8002-H (0.0062)➅ N TPCA8027-H (0.010)➅ 2SJ402 (0.038)➃ 2SK2995 (0.068)➁ 30
TK30A06J3A (0.026)➅
2SK3847 (0.016)➅ 2SK1486 (0.095)
32 N TPCA8047-H (0.0073)➅
32
NS TPCA8A02-H (0.0053)➅
34 N TPCA8039-H (0.0057)➅
34
N TPCA8024 (0.0043)➅ N TPCA8015-H (0.0054)➅ 2SK3662 (0.0125)➅
35 N TPCA8048-H (0.0066)➅
35
36 2SK2385 (0.03)➃ 36
NS TPCA8A08-H (0.0042)➅ N TPCA8046-H (0.0054)➅
38 N TPCA8036-H (0.0038)➅
38
N TPCA8011-H (0.0035)➅ P TPCA8102 (0.006)➅ P TPCA8108 (0.0095)➅ P TPCA8104 (0.016)➅ TK40A08K3 (0.009)➅ TK40D10J1 (0.015)➅ TK40J60T (0.08)➈
P TPCA8103 (0.0042)➅ N TK40P04M1 (0.011)➅ TK40A10J1 (0.015)➅
P TPCA8106 (0.0037)➅ TK40A10K3 (0.015)➅
40 40
N TPCA8012-H (0.0049)➅ TK40X10J1 (0.020)➅
N TPCA8025 (0.0036)➅
N TK40P03M1 (0.0108)➅

44 NS TPCA8A04-H (0.0032)➅ 44
$ 2SK3506 (0.02) $ 2SK2550 (0.03)➃ 2SK2233 (0.03)➃
N TPCA8019-H (0.0031)➅ 2SK2886 (0.02)➃ 2SK2266 (0.03)➃
45 N TPCA8026 (0.0022)➅ $ 2SK2744 (0.02)➃ 2SK2376 (0.017)➃ 45
N TPCA8042 (0.0033)➅ $ 2SK3051 (0.03)➃ $ 2SK2398 (0.03)➃
N TPCA8060-H (0.0034)➅ 2SK3844 (0.0058)➅

46 N TPCA8045-H (0.0036)➅ 46
N TPCA8028-H (0.0028)➅ N TK50P04M1 (0.0087)➅ $ 2SK2551 (0.011)➃ 2SK2173 (0.017)➃ 2SK1381 (0.032) TK50X15J1 (0.03)➅ 2SK3132 (0.09)➁
50 2SK3131 (0.11)➁ 50
N TK50P03M1 (0.0075)➅ 2SK2745 (0.0095)➃ $ 2SK2445 (0.018)➁ TK50F15J1 (0.03)➅
TK55D10J1 (0.0105)➅
55 TK55A10J1 (0.0105)➅
55
2SK2267 (0.011)➃ TK60D08J1 (0.0078)➅ 2SK1382 (0.020)
60 2SK2313 (0.011)➃ TK60A08J1 (0.0078)➅
60
TK70J04J3 (0.0038)➅ 2SK3845 (0.0058)➅
TK70X04K3 (0.0056)➅ TK70D06J1 (0.0064)➅
70 TK70X04K3L (0.0056)➅ TK70A06J1 (0.0064)➅ 70
TJ70A06J3 (0.008)➅
TK70X06K3 (0.008)➅

2SK3843 (0.0035)➅ 2SK4034 (0.0058)➅

75 2SK3842 (0.0058)➅
75

TK80X04K3(0.0035)➅ TK80A08K3 (0.0045)➅

80 TK80D08K3 (0.0045)➅
80
TK100F04K3 (0.003)➅ TK100F06K3 (0.005)➅
100 TK100F04K3L (0.003)➅
100
120 TJ120F06J3 (0.008)➅ 120
130 TK130F06K3 (0.0034)➅ 130
TK150F04K3 (0.0021)➅
150 TK150F04K3L (0.0021)➅ 150

Notes:
Legend Product series ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI Package PW-Mini VS-8 VS-6 ♠ PS-8 STP TO-92MOD PW-Mold New PW-Mold TSON Advance New PW-Mold2 DP TPS TSSOP Advance TSSOP-8 SOP-8 ( ) = RDS(ON) max ✽ = 1.8-V drive P = P-ch NS = N-ch + SBD PD = P-ch + Driver
PS = P-ch + SBD (load switch)
➃ : L2-π-MOSV ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII SOP-8 Lead Clamp SOP Advance TO-220NIS TO-220SIS TO-220AB TO-220(W) TFP TO-220FL/SM TO-220SM(W) TO-3P(N) TO-3P(N)IS TO-3P(L) Chip LGA $ = 10-V drive
# = 2.5-V drive
= High-speed diode
N = N-ch
CN = Complementary N-ch
CP = Complementary P-ch [ ] = Under development
➇ : π-MOSIV ➈ : DTMOSI ➉ : DTMOSII S-Mini TSM USM UFM SSM VESM CST3 CST3B CST4 SMV US6 UF6 ES6 CST6D USV UFV ESV DPAK

14 15
 4 Low-VDSS MOSFETs (in Small SMD Packages)

4-1 Packaging Options

SSM Series
The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help reduce system size.

CST3 CST3B VESM (SOT-723) SSM (SOT-416)(SC-75) USM (SOT-323)(SC-70)

Chip-Scale Package, Transfer Molded, 3-Pin Chip-Scale Package, Transfer Molded, 3-Pin, B-Type Very Extreme Super-Mini Small Super-Mini Ultra-Super-Mini
Typical product: SSM3K35CT Typical product: SSM3J46CTB Typical product: SSM3K35MFV Typical product: SSM3K35FS Typical product: SSM3K15FU
0.8 1.2
0.8 5
1. Thickness: Thickness: 1.2 Thickness:
1.6
Thickness: 2.0 Thickness:
0.6 0 0.38 typ. 0.8 1.2 0.48 typ. 0.5 typ. 0.7 typ. 0.9 typ.

8
45

3
0.
35

1.
0.

1.
0.

1.2 2.1
25

1.6
15

22
0.
0.

Unit: mm Unit: mm Unit: mm Unit: mm Unit: mm

3
0.

0.

0.
UFM S-Mini (SOT-346)(SC-59) TSM CST4 ESV (SOT-553)
Ultra-super-Mini Flat lead Super-Mini Thin Super-Mini Chip-Scale Package, Transfer Molded, 4-Pin Extreme Super-mini, 5-pin
Typical product: SSM3J130TU Typical product: SSM3K15F Typical product: SSM3J304T Typical product: SSM4K27CT Typical product: SSM5N15FE
1.5 1.6
1.7 1.2
2.0 Thickness: 2.9 Thickness: 2.9 Thickness: Thickness: Thickness:
0.7 typ. 1.1 typ. 0.7 typ. 0.8 1.2 0.38 typ. 1.6 0.55 typ.
9

9
1.

1.

5
3

0.
1.

5
0.
2.1 2.5 2.8 1.6

2
0.
Unit: mm Unit: mm Unit: mm Unit: mm Unit: mm

2
4
3

0.
0.
0.

0.

USV (SOT-353)(SC-88A) UFV SMV (SOT-25)(SC-74A) CST6D ES6 (SOT-563)

Ultra-Super-mini, 5-pin Ultra-super-mini, Flat lead, 5-pin Super-Mini, 5-pin Chip-Scale Package, Transfer Molded, 6-Pin, D-Type Extreme Super-mini, 6-pin
Typical product: SSM5N15FU Typical product: SSM5H12TU Typical product: SSM5H14F Typical product: SSM6N37CTD Typical product: SSM6N36FE

1.2 1.7 1.6 1.2

2.0
5 Thickness: 2.0 Thickness: 2.9 Thickness: 0.9 Thickness: 1.6 Thickness:
0.9 typ. 0.7 typ. 1.1 typ. 1.0 0.38 typ. 0.55 typ.
95
65

35

5
0.
3

0.
0.

0.
1.

1.6
15

2.1 2.1 2.8

0.
2
0.

2
Unit: mm Unit: mm Unit: mm Unit: mm Unit: mm
0.

0.
3
0.

US6 (SOT-353)(SC-88A) UF6

Ultra-Super-mini, 6-pin Ultra Super mini Flat lead 6-pin
Typical product: SSM6N15FU Typical product: SSM6J409TU

1.2 1.7
5 Thickness: 2.0 Thickness:
2.0 0.9 typ. 0.7 typ.
65

65
0.

0.

2.1 2.1
2
0.

Unit: mm Unit: mm
3
0.

TPC Series
The TPC Series comes in small, thin packages suitable for portable devices. The latest TSON Advance package allows the maximum permissible
power dissipation equivalent to SOP-8, but occupies 64% less board space.

VS-6 VS-8 PS-8 Chip LGA STP2

Very Thin & Small, 6-pin Very Thin & Small, 8-pin Progressive & Small 8-pin Series Land Grid Array Small Thin Package
Typical product: TPC6003 Typical product: TPCF8101 Typical product: TPCP8402 Typical product: TPCL4201 Typical product: TPCT4204
1.6 1.5
2.9
2.4 1.6 3.4
2.9
Thickness: 2.9 Thickness: Thickness: 9 1.59 Thickness: Thickness:
0.75 typ. 0.8 typ. 0.8 typ. 1.5 φ0.3 0.25 typ. 0.65 typ.
5

65

65
9
0.

0.

0.

1.9 2.8 3.8

65

2.8
3
33
3

Unit: mm Unit: mm Unit: mm

0.

Unit: mm Unit: mm
3

0.
0.

0.

0.

TSON Advance TSSOP-8 TSSOP Advance SOP-8 SOP Advance

Typical product: TPCC8005-H Typical product: TPCS8208 Typical product: TPCM8001-H Typical product: TPC8035-H Typical product: TPCA8028-H

3.0 4.4 3.6 4.4

3.3
3.1
Thickness: Thickness: 3.5 5 Thickness: 5.0 Thickness: 5.0
5.0 Thickness:
0.85 typ. 0.9 typ. 0.75 typ. 1.6 typ. 0.95 typ.
27
65

7
8

2
1.

6.4
0.
0.

1.
65

3.3 4.6 6.0 6.0

0.

5
25

0.
3

4
25

Unit: mm Unit: mm Unit: mm Unit: mm Unit: mm

0.

0.
0.
0.

16
 4-2 Application Examples and Block Diagrams

Cell Phone (Power Supply Circuit)

Load switches Load switches

P-ch: SSM3J130TU P-ch: SSM3J120TU
P-ch: SSM3J409TU P-ch: SSM6J51TU
P-ch: SSM3J120TU P-ch: SSM3J46CTB

Battery charger Control IC Power supply PA

IC
USB charging
BB-IC

Power management switches Li-ion battery CCD camera

P-ch: SSM3J114TU module
P-ch: SSM3J115TU

DC-DC converters
HS: SSM5G10TU
(P-ch + Schottky Barrier Diode)
LS: SSM5H12TU
(N-ch + Schottky Barrier Diode)

Notebook PC (Power Supply Circuit)

DC-DC converters
HS: TPCA8030-H
LS: TPCA8036-H
LS: TPCA8028-H
CPU
V-Core LS: TPCA8A04-H
Power management switches Load switches
Adapter HS: TPCA8030-H P-ch: TPC6111 / TPCF8104
P-ch: TPC8121 / 8118 / 8123
Input LS: TPCA8036-H N-ch: TPC6011 / TPCF8002
N-ch: TPC8030 / 8028
LS: TPCA8028-H P-ch: SSM3J117T / SSM3J321T
19 V VGA LS: TPCA8A04-H N-ch: SSM3K315T / SSM3K7002F

HS: TPC8037-H
LS: TPC8037-H
DDR TPC8A03-H

Charger LDO
HS: TPCP8005-H
LS: TPCP8005-H HS: TPC8037-H
Dual: TPC8216-H LS: TPC8037-H
3.3 V/5 V

CMS16
HS: TPC8037-H LDO
LS: TPC8037-H
1.8V

Battery 1
HS: TPC8037-H
LS: TPC8037-H
1.5 V

Battery 2
HS: TPC8037-H
LS: TPC8037-H
1.05 V

17
4 Low-VDSS MOSFETs (in Small SMD Packages)

4-2 Application Examples and Block Diagrams

Lithium-Ion Secondary Battery (Battery Protection Circuits)

Notebook PCs
Cell Phones (Example using P-channel MOSFETs)

P+ P- P- P+

Control IC
Control IC

Microcontroller

Dual N-ch MOSFET

• STP2 Series Single P-ch MOSFET x 2
• PS-8 (dual) • SOP Advance
• Chip LGA • SOP-8
• TSON Advance
Single N-ch MOSFET x 2
• SOP Advance
• SOP-8
• TSON Advance

Motor Driver (Power Driver Circuit)

Motors
Power driver circuit

M
Controller

Interface

Pre-driver

Protection
circuit

P/N-ch complementary MOSFET

• VS Series (dual)
• PS Series (dual)
• SOP Series (dual)

18
 4-3 Low-VDSS MOSFET Roadmaps

Roadmap for Trench MOSFETs

■ High-Speed, Low-VDSS U-MOS ■ Low-Ron Trench MOSFETs

30 30
N-ch, VDSS = 30 V

25 U-MOSIV
Pch
U-MOSV

Ron*A (mOhm*mm2)
10 20
U-MOSIII
U-MOSVI
Qsw (nC)

15 Nch

U-MOSIV

3 10
U-MOSVI
U- 5
U- M
O
M SI
U- O I
M SV I-H
U- O
1 M SV -H
O
SV I-H 0 2005 2006 2007 2008 2009 2010
1 5 10 II-
RDS(ON) (mΩ) H

Package Options

100
SOP Advance

TSSOP Advance

TSON Advance

SOP-8
PS-8
10
VS-8
UF6 VS-6
Drain Current (A)

Chip LGA UFM TSM

STP2 STP TSSOP-8

ES6 S-Mini
SMV
CST3B

UFV

US6

VESM SSM USM

CST4

CST6D

CST3 ESV USV

0.1
0.1 1 10 100
Footprint Area (mm2)

19
 4 Low-VDSS MOSFETs (in Small SMD Packages)

■ Ultra-Small Packages
S-Mini USM SSM VESM CST3 US6 USV ESV CST6D
2.5 mm 1.6 mm 1.2 mm 0.6 mm 1.6 mm 0.9 mm
2.1 mm 2.1 mm 2.1 mm

1.6 mm
2.0 mm

2.0 mm

2.0 mm
1.6 mm
2.9 mm

1.2 mm

1.0 mm

1.0 mm
0.425 mm 0.4 mm 0.2 mm 0.425 mm 0.425 mm 0.2 mm
0.5 mm

Footprint
7.3 mm2 4.2 mm2 2.6 mm2 1.4 mm2 0.6 mm2 4.2 mm2 4.2 mm2 2.6 mm2 0.9 mm2
Area

Permissible Power
Dissipation 0.2 W 0.2 W 0.1 W 0.15 W 0.1 W 0.2 W 0.2 W 0.15 W 0.14 W
(Note)

Height
(MAX)
1.4 mm 1.1 mm 0.9 mm 0.55 mm 0.4 mm 1.1 mm 1.1 mm 0.6 mm 0.4 mm

Note: Mounted on FR4 Boad (25.4 x 25.4 mm)

■ Thermally-Enhanced Compact Packages

TSM UF6 SMV UFV UFM ES6 CST3B CST4
2.8 mm 2.8 mm 1.6 mm 0.8 mm 0.8 mm
2.1 mm 2.1 mm 2.1 mm
2.9 mm

2.9 mm

1.2 mm

1.2 mm
2.0 mm

2.0 mm

2.0 mm

1.6 mm
0.2 mm 0.2 mm 0.2 mm 0.2 mm
0.6 mm 0.6 mm

Footprint
8.1 mm2 4.2 mm2 8.1 mm2 4.2 mm2 4.2 mm2 2.6 mm2 1.0 mm2 1.0 mm2
Area

Permissible Power
Dissipation 0.7 W 0.5 W 0.75 W 0.5 W 0.5 W 0.5 W 1.0 W 0.4 W
(Note)

Height
(MAX)
0.85 mm 0.75 mm 1.4 mm 0.75 mm 0.75 mm 0.6 mm 0.5 mm 0.4 mm

Note: Mounted on FR4 Boad (25.4 x 25.4 mm)

■ Thermally Enhanced Packages ■ Compact Packages

SOP Adv. SOP-8 TSSOP Adv. TSON Adv. VS-8 VS-6 PS-8 Chip LGA
2.9 mm 2.9 mm 1.59 mm
2.9 mm
4.65 mm

3.3 mm
6 mm

6 mm

2.8 mm

2.8 mm

1.59 mm
1.9 mm

0.65 mm
3.3 mm 0.95 mm 0.65 mm
3.5 mm
5 mm 5 mm

Footprint 16.3 mm2 10.9 mm2 Footprint 5.5 mm2 2.56 mm2
Area 30 mm2 30 mm2 Area 8.1 mm2 8.1 mm2
(−46%) (−64%) (–32%) (–68%)

Permissible Power 2.8 W 2.3 W Permissible Power 2.5 W 1.68 W

1.9 W 1.9 W 2.2 W —
Dissipation (+47%) (+21%) Dissipation (+14%) (–24%)

1.0 mm 0.8 mm 0.9 mm 0.25 mm

Height 1.9 mm Height 0.85 mm 0.85 mm 0.85 mm
(–47%) (–58%) (–53%) (–71%)
(Percentage relative to SOP-8) (Percentage relative to VS-6)

20
 4-4 Low-VDSS, High-Speed MOSFETs

Synchronous Rectification DC-DC Converters – Block Diagram, Timing Chart and Power Loss Factors
■ Block Diagram ■ Timing Chart
Control IC-side Synchronous-side T
(switch and high-side) (low-side)
MOSFETs MOSFET
ton(High)
L
D S
Vin Vout
G
D
VGS(High)
Control Load
IC C ton(Low)
Vcc G S

VGS(Low)

High-side MOSFET: Turn-off loss

VDS(High)
High-side MOSFET: Conducting loss

High-side MOSFET: Turn-on loss

IDS(High)

IDS(Low)
Low-side MOSFET: Self-turn-on loss
ISBD(SBD)

VDS
(Low+SBD)
Dead time: Diode loss

Low-side MOSFET: Conducting loss Dead time 1 Dead time 2

Synchronous Rectification DC-DC Converters – Summary Results of Power Loss Simulation and Key Parameters for MOSFETs

8.00
Key Parameters to Improve Efficiency
Conditions Efficiency
7.00
• Input Voltage: 19 V 82.49% Synchronous-side MOSFET
• Output Voltage: 1.5 V
• Frequency: 1 MHz Others (drive loss, etc.) Very low RDS (ON)
6.00
Reduction of the self-turn-on losses
(low-side) MOSFET
Synchronous-side

Low Qrr
Power Dissipation (W)

Conducting loss
5.00
Low Cgd, Cgd/Cgs
Dead time loss (off) Low rg
4.00
Optimized Vth
Efficiency Self-turn-on loss
85.13% Dead time loss (on)
Shoot-through current control
3.00
Low Qg
Efficiency
(high-side) MOSFET

Turn-on loss
83.20% Switch-side MOSFET
Switch-side

2.00
Conducting loss
High-speed switching
Turn-on loss Low Qsw
1.00
Low rg
0.00 Low RDS (ON)
5 10 20
Output Current (A)

21
 4 Low-VDSS MOSFETs (in Small SMD Packages)

Synchronous Rectification DC-DC Converters – Efficiency Improvement by Thermally Enhanced Package and New Process Technology
■ Thermally Enhanced Package
Toshiba has developed the SOP Advance package with the same footprint area as the standard SOP-8 package. With an external
heatsink on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and
thus high-current capability.
Unit: mm

SOP-8 SOP Advance

6.0
6.0

5.0 5.0
1.9 Max

1.0 Max
SOP-8 SOP Advance Features of the SOP Advance
Footprint Area (mm2) 30 30 Same footprint area as the SOP-8
Total height (max) (mm) 1.9 1.0 Low profile, Thinner by 0.9 mm
Rth(ch-a) (t = 10 s) (Note 1) (˚C / W) 65.8 44.6 High power dissipation
Current rating (A) 18 40 High current-carrying capacity
Package resistance (Note 2) (mΩ) 1.6 0.5 Low package resistance
Note 1: When mounted on a glass-epoxy board (25.4 mm x 25.4 mm x 0.8 mm) Note 2: Without chip resistance

■ New Process Technology

Toshiba has developed a new process technology to further reduce an internal gate resistance (rg) and gate capacitance ratio
(Cgd/Cgs) for minimizing the self-turn-on loss while maintaining both the low ON-resistance and low gate charge characteristics.

RDS(ON) Typ. @4.5 V (mΩ) rg Typ. (Ω) Cgd/Cgs Typ. (%)

TPCA8028-H (New generation) 2.3 1.0 6.8
TPCA8019-H (One gen. ago) 3.1 1.0 6.6
TPCA8004-H (Two gen. ago) 4.8 2.4 12.7

Efficiency Characteristics
f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V
90 90
Two low-side MOSFETs One low-side MOSFET

88 88

86 86

84 84
Efficiency (%)

Efficiency (%)

82 82

80 80

78 High-side MOSFET Low-side MOSFET 78 High-side MOSFET Low-side MOSFET

TPCA8030-H (1p) + TPCA8028-H (2p) New TPCA8030-H (1p) + TPCA8028-H (1p) New
device device
76 TPCA8030-H (1p) + TPCA8036-H (2p) 76 TPCA8030-H (1p) + TPCA8036-H (1p)
Conventional Conventional
TPCA8023-H (1p) + TPCA8019-H (2p) device TPCA8023-H (1p) + TPCA8019-H (1p) device
74 74
0 5 10 15 20 25 0 5 10 15 20 25
Output Current (A) Output Current (A)

22
 Synchronous Rectification DC-DC Converters – MOSBD (MOSFET with SBD)
■ External SBD

● Low-side MOSFET turned on ● Dead time ● High-side MOSFET turned on

LS LS
LA LA
Large lrr

Current Current Current

When an SBD is added externally, the SBD can’t function fully 1: Increase in the conducting loss of the body diode.
due to the influence of wire inductances (Ls and LA); thus a body 2: Increase in the reverse recovery loss due to high di/dt.
diode current during the dead time becomes larger and causes 3: Induces a self-turn-on phenomenon.
the following penalties.

■ MOSFET with SBD (MOSBD)

A MOSFET with SBD using a monolithic structure reduces a wire inductance (LA) and a parasitic inductance (LS). This structure makes
it possible for the SBD to function fully and to reduce losses.

● Current Waveform Simulation Using External SBD MOSFET with SBD (MOSBD)
20 20
MOSFET channel current MOSFET channel current

10 Body diode current 10

SBD current

0.0 0.0
SBD current
Body diode current

-10 -10

-20 -20
691.01μ 691.04μ 691.07μ 691.10μ 691.01μ 691.04μ 691.07μ 691.10μ
time (s) time (s)
LS = LA = 0.5 nH LS = LA = 0.01 nH

Efficiency Characteristics
f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V
90 90
Two low-side MOSFETs One low-side MOSFET
88 88

86 86

84 84
Efficiency (%)

Efficiency (%)

82 82

80 80

High-side MOSFET Low-side MOSFET

78 78
TPCA8030-H (1p) + TPCA8A04-H (2p) MOSBD (For heavy-load
applications) High-side MOSFET Low-side MOSFET
TPCA8030-H (1p) + TPCA8A02-H (2p) MOSBD (For light-load 76 TPCA8030-H (1p) + TPCA8A04-H (1p) MOSBD
76 applications)
Standard
TPCA8030-H (1p) + TPCA8019-H (2p) Standard MOSFET TPCA8030-H (1p) + TPCA8019-H (1p) MOSFET
74 74
0 5 10 15 20 25 0 5 10 15 20 25
Output Current (A) Output Current (A)

23
 4 Low-VDSS MOSFETs (in Small SMD Packages)

High-Speed MOSFET Offerings

Absolute Maximum Ratings RDS(ON) Max (mΩ) Qsw Typ.(nC)
Circuit
Part Number Package @VDS = Series
VDSS (V) VGSS (V) ID (A) Configuration 2.5 V 4.5 V 10 V VDSS x 0.8
TPCA8011-H 20 ±12 40 SOP Advance 7.5 3.5 — 16 U-MOSIII-H
N-ch Single
TPC6007-H 30 5 — 79 54 1.8 U-MOSIII-H
VS-6
TPC6109-H –30 –5 P-ch Single — 83 59 4.8 U-MOSIII-H
TPC8216-H ✩ 6.4 N-ch Dual SOP-8 — 23.0 20 3.4 U-MOSVI-H
TPCP8005-H ✩ 11 PS-8 — 15.7 12.9 5.0 U-MOSV-H
TPCC8003-H ✩ 13 — 19.3 16.9 4.2 U-MOSVI-H
TPCC8001-H ✩ 22 — 10.6 8.3 7.1 U-MOSV-H
TPCC8002-H ✩ 22 TSON Advance — 10.6 8.3 7.1 U-MOSV-H
TPCC8006-H ✩ 22 — 9.3 8.0 7.4 U-MOSVI-H
TPCC8005-H ✩ 26 — 7.4 6.4 9.1 U-MOSVI-H
TPCM8003-H ✩ 21 — 15.7 12.9 5.0 U-MOSV-H
TPCM8004-H ✩ 24 TSSOP Advance — 13.4 11 5 U-MOSV-H
TPCM8002-H ✩ 30 — 8.2 6.2 9.3 U-MOSV-H
TPC8021-H 11 — 25 17 3.6 U-MOSIII-H
TPC8031-H ✩ 11 — 16.1 13.3 5.0 U-MOSV-H
TPC8037-H ✩ 12 — 13.9 11.4 5 U-MOSV-H
TPC8038-H ✩ 12 — 13.9 11.4 5 U-MOSV-H
TPC8040-H ✩ 13 — 11.1 9.7 5.1 U-MOSVI-H
TPC8032-H ✩ 15 SOP-8 — 8.6 6.5 8.4 U-MOSV-H
30
TPC8033-H ✩ 17 — 7.2 5.3 9.6 U-MOSV-H
TPC8039-H ✩ 17 — 6.9 6.0 8.5 U-MOSVI-H
TPC8034-H ✩ 18 — 4.5 3.5 16 U-MOSV-H
TPC8036-H ✩ 18 — 5.1 4.5 13 U-MOSVI-H
TPC8035-H ✩ 18 — 3.6 3.2 17 U-MOSVI-H
TPCA8023-H ✩ 21 — 15.7 12.9 5.0 U-MOSV-H
±20
TPCA8040-H ✩ 23 — 10.8 9.4 5.7 U-MOSVI-H
TPCA8030-H ✩ 24 N-ch Single — 13.4 11.0 5 U-MOSV-H
TPCA8031-H ✩ 24 — 13.4 11.0 5 U-MOSV-H
TPCA8018-H ✩ 30 — 8.2 6.2 9.3 U-MOSV-H
TPCA8039-H ✩ 34 SOP Advance — 6.6 5.7 8.6 U-MOSVI-H
TPCA8036-H ✩ 38 — 4.8 4.2 13 U-MOSVI-H
TPCA8012-H ✩ 40 — 6.8 4.9 11.0 U-MOSV-H
TPCA8060-H ✩ 45 — 3.9 3.4 17 U-MOSVI-H
TPCA8019-H ✩ 45 — 4.1 3.1 15.5 U-MOSV-H
TPCA8028-H ✩ 50 — 3.2 2.8 20 U-MOSVI-H
TPC6006-H 3.9 VS-6 — 100 75 1.3 U-MOSIII-H
TPC8022-H 7.5 — 35 27 3.5 U-MOSIII-H
TPC8052-H ✩ 12 — 13.3 11.5 6.6 U-MOSVI-H
TPC8047-H ✩ 16 SOP-8 — 8.8 7.6 11 U-MOSVI-H
TPC8046-H ✩ 18 — 6.6 5.7 15 U-MOSVI-H
TPC8045-H ✩ 18 — 4.4 3.9 23 U-MOSVI-H
TPCA8020-H 7.5 — 35 27 3.5 U-MOSIII-H
40
TPCA8052-H ✩ 20 — 13.1 11.3 6.6 U-MOSVI-H
TPCA8014-H 30 — 14 9 7.4 U-MOSIII-H
TPCA8027-H 30 — — 10 8.1 U-MOSIII-H
SOP Advance
TPCA8047-H ✩ 32 — 8.5 7.3 13 U-MOSVI-H
TPCA8015-H 35 — 7.9 5.4 13 U-MOSIII-H
TPCA8046-H ✩ 38 — 6.3 5.4 15 U-MOSVI-H
TPCA8045-H ✩ 46 — 4.1 3.6 23 U-MOSVI-H
✩: No protection Zener diode between gate and source

24
 Absolute Maximum Ratings RDS(ON) Max (mΩ) Qsw Typ.(nC)
Circuit
Part Number Configuration Package @VDS = Series
VDSS (V) VGSS (V) ID (A) 4.5 V 10 V VDSS x 0.8
TPC8218-H ✩ 3.8 64 57 2.6 U-MOSVI-H
N-ch Dual
TPC8213-H 5 56 50 2.9 U-MOSIII-H
TPC8053-H ✩ 9 24.2 22.5 6.7 U-MOSVI-H
SOP-8
TPC8050-H ✩ 11 15.6 14.5 9.2 U-MOSVI-H
TPC8049-H ✩ 13 11.5 10.7 13 U-MOSVI-H
TPC8048-H ✩ 60 16 7.4 6.9 17 U-MOSVI-H
TPCA8053-H ✩ 15 24 22.3 6.9 U-MOSVI-H
TPCA8050-H ✩ 24 15.3 14.2 10 U-MOSVI-H
N-ch Single
TPCA8016-H 25 SOP Advance 26 21 6.6 U-MOSIII-H
TPCA8049-H ✩ 28 11.2 10.4 13 U-MOSVI-H
TPCA8048-H ✩ 35 7.1 6.6 19 U-MOSVI-H
TPC8051-H ✩ 13 SOP-8 10.1 9.7 16 U-MOSVI-H
80
TPCA8051-H ✩ 28 SOP Advance 9.8 9.4 18 U-MOSVI-H
TPCP8003-H 2.2 PS-8 190 180 2.0 U-MOSIII-H
TPC8214-H 100 2.2 N-ch Dual SOP-8 190 180 2.0 U-MOSIII-H
TPCA8022-H 22 SOP Advance — 26 14 U-MOSIII-H
TPCA8009-H 150 7 SOP Advance — 350 3.7 π-MOSV
N-ch Single
TPCA8010-H 200 ±20 5.5 SOP Advance — 450 3.7 π-MOSV
TPCA8008-H 250 4 SOP Advance — 580 3.7 π-MOSV
TPCP8A05-H ✩ 8 PS-8 21.9 17.5 2.7 U-MOSV-H
TPCC8A01-H ✩ 21 TSON Advance 12.6 9.9 4.1 U-MOSV-H
TPCM8A05-H ✩ 20 TSSOP Advance 17.2 12.9 3.7 U-MOSV-H
TPC8A05-H ✩ 10 17.6 13.3 3.7 U-MOSV-H
TPC8A06-H ✩ 12 12.9 10.1 4.5 U-MOSV-H
SOP-8
TPC8A03-H ✩ 30 17 MOSBD 7.0 5.6 8.4 U-MOSV-H
TPC8A04-H ✩ 18 4.5 3.6 13.4 U-MOSV-H
TPCA8A05-H ✩ 20 17.2 12.9 3.7 U-MOSV-H
TPCA8A02-H ✩ 34 6.7 5.3 8.6 U-MOSV-H
SOP Advance
TPCA8A08-H ✩ 38 5.1 3.9 11 U-MOSV-H
TPCA8A04-H ✩ 44 4.1 3.2 13.4 U-MOSV-H
TPCP8103-H –4.8 PS-8 54 40 6.5 U-MOSIII-H
TPC8116-H –40 –7.5 P-ch Single SOP-8 37 30 9.7 U-MOSIII-H
TPCA8107-H –7.5 SOP Advance 37 30 9.7 U-MOSIII-H
40 6.5 35 27 3.5 U-MOSIII-H
TPC8406-H N-ch/P-ch Dual SOP-8
–40 –6.5 37 30 9.7 U-MOSIII-H
✩: No protection Zener diode between gate and source

25
 4 Low-VDSS MOSFETs (in Small SMD Packages)

4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection)

Lithium-Ion Battery Protection Circuit Trend

Lithium-Ion Secondary
Battery Protection TSSOP-8 (6.4 mm x 3.3 mm x 0.9 mm)

2003 4.0-
PCM 3.5 mm
Control IC

STP (3.8 mm x 2.0 mm x 0.6 mm)

LiB
2004 3.0-
3.5 mm

STP2 (3.8 mm x 1.6 mm x 0.6 mm)

2006 3.0 mm

MOSFET Roadmap
2003 2004 2005 2006 2007 2008 2009 2010
TSSOP Advance

SOP Advance
For Laptop PCs

SOP-8

TSON Advance

P-ch U-MOSIV U-MOSV U-MOSVI

N-ch U-MOSIV U-MOSVI

For Cell Phones, Digital Cameras

PS-8
STP
STP2
TSSOP-8
and PVC

Chip LGA
MOSFET + Control IC

N-ch U-MOSIV U-MOSV U-MOSVI

26
 Low-ON-resistance N-Channel Power MOSFETs
Absolute Maximum Ratings RDS(ON) Max (mΩ)
Circuit
Part Number Package Series
VDSS (V) VGSS (V) ID (A) Configuration 2.5 V 4V 4.5 V 10 V
TPCT4203 ✩ 20 ±12 6 49 32 — — U-MOSIV
STP2
TPCT4204 ✩ 30 ±12 6 52 39 — — U-MOSIV
TPCL4201 ✩ 20 ±12 6 N-ch Dual 52 — 31 — U-MOSV
TPCL4203 ✩✽ 24 ±12 6 Chip LGA 55 — 36 — U-MOSV
TPCL4202 ✩✽ 30 ±12 6 64 — 40 — U-MOSV
TPCP8006 ✩ 20 ±12 9.1 13.7 — 10 — U-MOSIV
N-ch Single
TPCP8004 ✩ 30 ±20 8.3 PS-8 — — 14 8.5 U-MOSIV
TPCP8202 30 ±12 5.5 N-ch Dual 39 24 23 — U-MOSIV
TPCC8007 ✩✽ 20 ±12 27 (8.7) — (4.6) — U-MOSIV
TSON Advance
TPCC8008✩ 30 ±25 25 — — 12.8 6.8 U-MOSIV
TPC8025 ✩ 30 ±20 11 — — 14.5 9 U-MOSIV
TPC8030 ✩ 30 ±25 11 — — 17 9 U-MOSIV
TPC8041 ✩ 30 ±20 13 — — 13.5 7 U-MOSIV
N-ch Single
TPC8026 ✩ 30 ±20 13 — — 10 6.6 U-MOSIV
TPC8028 ✩ 30 ±20 18 — — 8 4.3 U-MOSIV
TPC8029 ✩ 30 ±20 18 — — 7 3.8 U-MOSIV
SOP-8
TPC8042 ✩ 30 ±20 18 — — 6.5 3.4 U-MOSIV
TPC8027 ✩ 30 ±20 18 — — 5.5 2.7 U-MOSIV
TPC8208 20 ±12 5 70 50 — — U-MOSIII
TPC8207 20 ±12 6 30 20 — — U-MOSIII
N-ch Dual
TPC8211 30 ±20 5.5 — — 44 36 U-MOSIII
TPC8210 30 ±20 8 — — 20 15 U-MOSIII
TPCA8024 ✩ 30 ±20 35 — — 7.8 4.3 U-MOSIV
TPCA8025 ✩ 30 ±20 40 — — 6.0 3.5 U-MOSIV
SOP Advance N-ch Single
TPCA8042 ✩ 30 ±20 45 — — 5.7 3.3 U-MOSIV
TPCA8026 ✩ 30 ±20 45 — — 4.5 2.2 U-MOSIV
✩: No protection Zener diode between gate and source ✽: Under development

Low-ON-resistance P-Channel Power MOSFETs

Absolute Maximum Ratings RDS(ON) Max (mΩ)
Circuit
Part Number Package Series
VDSS (V) VGSS (V) ID (A) Configuration 2.5 V 4V 4.5 V 10 V
TPCC8102 ✩ –30 ±20 –15 — 33.2 — 18.9 U-MOSV
TSON Advance
TPCC8103 ✩ –30 ±20 –18 — 22 — 12 U-MOSV
TPC8115 –20 ±8 –10 14 — 10 — U-MOSIV
TPC8119 ✩ –30 ±20 –10 — 28 — 13 U-MOSV
TPC8121 ✩ –30 ±20 –11 — 24 — 12 U-MOSV
TPC8111 –30 ±20 –11 — 18 — 12 U-MOSIV
TPC8113 –30 ±20 –11 P-ch Single — 18 — 10 U-MOSIV
TPC8123 ✩ –30 –25/+20 –11 — — 12.5 9 U-MOSVI
TPC8122 ✩ –30 ±20 –12 SOP-8 — 16.5 — 8 U-MOSV
TPC8118 ✩ –30 ±20 –13 — 15 — 7 U-MOSV
TPC8114 –30 ±20 –18 — 6.8 — 4.5 U-MOSIV
TPC8117 ✩ –30 ±20 –18 — 7.9 — 3.9 U-MOSV
TPC8120 ✩ –30 –25/+20 –18 — — 4.2 3.2 U-MOSVI
30 ±20 6 — — 33 26 U-MOSIII
TPC8405 N-ch/P-ch Dual
–30 ±20 –4.5 — — 42 33 U-MOSIV
TPCM8102 ✩ –30 ±20 –25 TSSOP Advance — 16 — 7.7 U-MOSV
TPCA8105 –12 ±8 –6 51 33 — — U-MOSIV
P-ch Single
TPCA8103 –30 ±20 –40 SOP Advance — 6.8 — 4.2 U-MOSIV
TPCA8106 ✩ –30 ±20 –40 — 7.8 — 3.7 U-MOSV
✩: No protection Zener diode between gate and source

27
 4 Low-VDSS MOSFETs (in Small SMD Packages)

4-6 Semi-Power MOSFET Offerings

Semi-Power P-Channel Single MOSFETs Unit: mm

RDS(ON) Max (mΩ)
VDSS VGSS ID Ciss *Internal Land Pattern
Package Part Number VGS = VGS = VGS = VGS = Series
(V) (V) (A) (pF) Connections Example
l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l
0.7
CST3B

0.25 0.65
D

0.65
1.2

SSM3J46CTB –20 ±8 –2.0 250 178 133 103 290 U-MOSVI

(@4.5 V) G S
0.8 0.48 0.25
TOP VIEW 0.45
SSM6J212FE✽ –20 ±8 –3.3 108 73.7 45.6 43.4(@4.5V) 834 U-MOSVI

0.45
ES6 SSM6J53FE –20 ±8 –1.8 364 204 136 — 568 U-MOSIV 0.3
(SOT-563) SSM6J206FE –20 ±8 –2.0 — 320 186 130 335 U-MOSIII
1.0
SSM6J205FE –20 ±8 –0.8 — 460 306 234 250 U-MOSIII

1.35
0.5 0.5
1.6

SSM6J26FE –20 ±8 –0.5 — 980 330 230 250 U-MOSIII

1.6 0.55
SSM6J23FE –12 ±8 –1.2 — — 210 160 420 U-MOSIII
SSM6J25FE –20 ±12 –0.5 — — 430 260 218 U-MOSIII
SSM6J207FE –30 ±20 –1.4 — — — 491 137 U-MOSII
SSM3J132TU✽ –12 ±5 –5.0 40.4 28.3 21.7 17.8(@4.5V) 2700 U-MOSVI
SSM3J130TU –20 ±8 –4.4 63.2 41.1 31 25.8(@4.5V) 1800 U-MOSVI
SSM3J120TU –20 ±8 –4.0 140 78 49 38 1484 U-MOSIV
SSM3J129TU –20 ±8 –4.6 137 88 62 46(@4.5V) 640 U-MOSV
SSM3J115TU –20 ±8 –2.2 353 193 125 98 568 U-MOSIV 0.5
UFM
SSM3J110TU –12 ±8 –2.3 — 240 145 94 550 U-MOSIII

0.8
SSM3J109TU –20 ±8 –2.0 — 300 172 130 335 U-MOSIII
2.1

1.9
SSM3J114TU –20 ±8 –1.8 526 321 199 149 331 U-MOSIV
2.0 0.7
SSM3J108TU –20 ±8 –1.8 — 363 230 158 250 U-MOSIII 0.65 0.65
SSM3J113TU –20 ±12 –1.7 — — 249 169 370 U-MOSIII
SSM3J111TU –20 ±12 –1.0 — — 680 480 160 U-MOSIII
SSM3J117TU –30 ±20 –2.0 — — — 225 280 U-MOSII
SSM3J118TU –30 ±20 –1.4 — — — 480 137 U-MOSII
SSM3J112TU –30 ±20 –1.1 — — — 790 86 U-MOSII
SSM6J409TU –20 ±8 –9.5 72.3 46.3 30.2 22.1(@4.5V) 1100 U-MOSV
UF6
SSM6J51TU –12 ±8 –4.0 150 85 54 — 1700 U-MOSIV
SSM6J50TU –20 ±10 –2.5 — 205 (@2.0V) 100 64 (@4.5V) 800 U-MOSIV 0.45
2.1

SSM6J21TU –12 ±12 –3.0 — — 88 50 1300 U-MOSIII

0.8
SSM6J401TU –30 ±20 –2.5 — — — 145 730 U-MOSIII
2.0 0.7

1.9
SSM6J402TU –30 ±20 –2.0 — — — 225 280 U-MOSIII
US6(SOT-363) SSM6J08FU –20 ±12 –1.3 — 460 (@2.0V) 260 180 370 U-MOSII 0.65 0.65
2.1

SSM6J06FU –20 ±12 –0.65 — — 700 500 160 π-MOSVI

SSM6J07FU –30 ±20 –0.8 — — — 800 130 π-MOSVI
2.0 0.9
SSM3J307T –20 ±8 –5.0 83 56 40 31(@4.5V) 1170 U-MOSV
SSM3J321T –20 ±8 –5.2 137 88 62 46(@4.5V) 640 U-MOSV
SSM3J326T✽ –30 ±12 –5.6 — 115 62.5 45.7(@4.5V) 640 U-MOSVI
SSM3J13T –12 ±8 –3.0 — 180 (@2.0V) 95 70 890 U-MOSIII
TSM
SSM3J312T –12 ±8 –2.7 — 237 142 91 550 U-MOSIII
0.8
SSM3J304T –20 ±8 –2.3 — 297 169 127 335 U-MOSIII
1.0

SSM3J317T –20 ±8 –3.6 — 306 144 107(@4.5V) 390 U-MOSIII

2.8

2.4

SSM3J313T –20 ±8 –1.6 — 640 396 268 170 U-MOSIII

SSM3J01T –30 ±10 –1.7 — — 600 400 240 π-MOSVI
2.9 0.7 0.95 0.95
SSM3J02T –30 ±10 –1.5 — — 700 500 150 π-MOSVI
SSM3J314T –30 ±20 –3.5 — — — 100 505 U-MOSIII-H
SSM3J14T –30 ±20 –2.7 — — — 170 413 U-MOSII
SSM3J306T –30 ±20 –2.4 — — — 225 280 U-MOSII
SSM3J305T –30 ±20 –1.7 — — — 477 137 U-MOSII
S-Mini 0.8
SSM3J327F✽ –20 ±8 –3.5 242 170 125 95(@4.5V) 290 U-MOSVI
1.0
2.5

2.4

SSM3J325F✽ –20 ±8 –2.0 362 252 191 155(@4.5V) 226 U-MOSVI

0.95 0.95
2.9 ± 0.2 1.1
✽: Under development * The internal connection diagrams only show the general configurations of the circuits.

28
 Semi-Power N-Channel Single MOSFETs Unit: mm
RDS(ON) Max (mΩ)
VDSS VGSS ID Ciss *Internal Land Pattern
Package Part Number VGS = VGS = VGS = VGS = Series
(V) (V) (A) (pF) Connections Example
l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l
CST4 D D 0.5

0.75
1.2

SSM4K27CT 20 ±12 0.5 — 390 260 205 174 U-MOSIII

0.3
G S
0.8 0.38 0.2
TOP VIEW

SSM6K211FE 20 ±10 3.2 118 82 59 47(@4.5 V) 510 U-MOSIII

SSM6K203FE 20 ±10 2.8 153 106 76 61 400 U-MOSIII
SSM6K202FE 30 ±12 2.3 — 145 101 85 270 U-MOSIII
ES6

0.45
SSM6K204FE 20 ±10 2.0 307 214 164 126 195 U-MOSIII 0.3
(SOT-563)
SSM6K208FE 30 ±12 1.9 — 296 177 133 123 U-MOSIII
1.0

1.35
SSM6K25FE 20 ±12 0.5 — 395 190 145 268 U-MOSIII
1.6

0.5 0.5
SSM6K24FE 30 ±12 0.5 — — 180 145 245 U-MOSIII
1.6 0.55
SSM6K22FE 20 ±12 1.4 — — 230 170 125 U-MOSIII
SSM6K210FE 30 ±20 1.4 — — — 371 57 U-MOSIII
SSM6K30FE 20 ±20 1.2 — — — 420 60 π-MOSVII
SSM6K31FE 20 ±20 1.2 — — — 540 36 π-MOSVII
SSM3K123TU 20 ±10 4.2 66 43 32 28 1010 U-MOSIII
SSM3K121TU 20 ±10 3.2 140 93 63 48 400 U-MOSIII
SSM3K104TU 20 ±12 3.0 — 110 74 56 320 U-MOSIII
SSM3K119TU 30 ±12 2.5 — 134 90 74 270 U-MOSIII
SSM3K102TU 20 ±12 2.6 — 154 99 71 268 U-MOSIII
UFM SSM3K122TU 20 ±10 2.0 304 211 161 123 195 U-MOSIII 0.5

SSM3K101TU 20 ±12 2.2 — 230 138 103 125 U-MOSIII

0.8
2.1

SSM3K127TU 30 ±12 2.0 — 286 167 123 123 U-MOSIII

1.9
SSM3K116TU 30 ±12 2.2 — — 135 100 245 U-MOSIII
2.0 0.7
SSM3K131TU 30 ±20 6.0 — — — 41.5(@4.5 V) 450 U-MOSIV 0.65 0.65

SSM3K124TU 30 ±20 2.4 — — — 120 180 π-MOSVII

SSM3K105TU 30 ±20 2.1 — — — 200 102 π-MOSVI
SSM3K128TU 30 ±20 1.5 — — — 360 57 U-MOSIII
SSM3K107TU 20 ±20 1.5 — — — 410 60 π-MOSVII
SSM3K106TU 20 ±20 1.2 — — — 530 36 π-MOSVII
SSM6K403TU 20 ±10 4.2 66 43 32 28 1050 U-MOSIII
SSM6K404TU 20 ±10 3.0 147 100 70 55 400 U-MOSIII
UF6 SSM6K405TU 20 ±10 2.0 307 214 164 126 195 U-MOSIII
SSM6K18TU 20 ±12 4.0 — — 54 40 1100 U-MOSIII
2.1

0.45
SSM6K406TU 30 ±20 4.4 — — — 38.5 (@4.5 V) 490 U-MOSIV
0.8

2.0 0.7 SSM6K34TU 30 ±20 3.0 — — — 77 (@4.5 V) 470 U-MOSIII

1.9
SSM6K407TU 60 ±20 2.0 — — — 440 150 π-MOSV
SSM6K32TU 60 ±20 2.0 — — — 440 140 π-MOSV 0.65 0.65
US6(SOT-363) SSM6K08FU 20 ±12 1.6 — 210 (@2.0 V) 140 105 306 U-MOSII
SSM6K06FU 20 ±12 1.1 — — 210 160 125 π-MOSVI
2.1

2.0 0.9
SSM6K07FU 30 ±20 1.5 — — — 220 102 π-MOSVI
SSM3K310T 20 ±10 5.0 66 43 32 28 1120 U-MOSIII
SSM3K309T 20 ±12 4.7 — 47 35 31 1020 U-MOSIII

TSM SSM3K301T 20 ±12 3.5 — 110 74 56 320 U-MOSIII

0.8
SSM3K316T 30 ±12 4.0 — 131 87 65(@4.5 V) 270 U-MOSIII
1.0

SSM3K01T 30 ±10 3.2 — — 150 120 152 π-MOSVI

2.4
2.8

SSM3K02T 30 ±10 2.5 — — 250 200 115 π-MOSVI

SSM3K315T 30 ±20 6.0 — — — 41.5(@4.5 V) 450 U-MOSIV
0.95 0.95
2.9 0.7 SSM3K14T 30 ±20 4.0 — — — 67 460 U-MOSII
SSM3K320T 30 ±20 4.2 — — — 77(@4.5 V) 190 U-MOSIV
SSM3K303T 30 ±20 2.9 — — — 120 180 π-MOSVII
SSM3K12T 30 ±20 3.0 — — — 175 120 π-MOSVII
SSM3K318T 60 ±20 2.5 — — — 145(@4.5 V) 235 U-MOSIV
* The internal connection diagrams only show the general configurations of the circuits.

29
 4 Low-VDSS MOSFETs (in Small SMD Packages)

Semi-Power Dual MOSFETs Unit: mm

RDS(ON) Max (mΩ)
VDSS VGSS ID Ciss *Internal Land Pattern
Package Polarity Part Number VGS = VGS = VGS = VGS = (pF) Series
(V) (V) (A) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l Connections Example

Q1
260

0.45
ES6 N-ch x 2 SSM6N42FE✽ 20 ±10 0.77 630 460 340 95 U-MOSIII 0.3
(@4.5 V)
(SOT-563) Q2

1.0

1.35
1.6

0.5 0.5
Q1
300
1.6 0.55 P-ch x 2 SSM6P41FE –20 ±8 –0.72 1040 670 440 110 U-MOSV
(@4.5 V) Q2

SSM6N39TU 20 ±10 1.6 247 190 139 119 260 U-MOSIII

SSM6N29TU 20 ±12 0.8 — 235 178 143 268 U-MOSIII Q1

N-ch x 2 SSM6N25TU 20 ±12 0.5 — 395 190 145 268 U-MOSIII

Q2
SSM6N24TU 30 ±12 0.5 — — 180 145 245 U-MOSIII
SSM6N40TU 30 ±20 1.6 — — — 182 180 U-MOSIII
SSM6P54TU –20 ±8 –1.2 555 350 228 — 331 U-MOSIV
SSM6P39TU –20 ±8 –1.5 — 430 294 213 250 U-MOSIII
Q1
SSM6P28TU –20 ±8 –0.8 — 460 306 234 250 U-MOSIII
P-ch x 2
SSM6P26TU –20 ±8 –0.5 — 980 330 230 250 U-MOSIII Q2

SSM6P25TU –20 ±12 –0.5 — — 430 260 218 U-MOSIII

SSM6P40TU –30 ±20 –1.4 — — — 403 120 U-MOSIII
20 ±10 1.6 247 190 139 119 260 U-MOSIII
SSM6L39TU
–20 ±8 –1.5 — 430 294 213 250 U-MOSIII
UF6 20 ±12 0.8 — 235 178 143 268 U-MOSIII 0.45
SSM6L13TU

0.8
–20 ±8 –0.8 — 460 306 234 250 U-MOSIII
2.1

1.9
20 ±12 0.5 — 395 190 145 268 U-MOSIII
SSM6L10TU Q1
2.0 0.7
–20 ±8 –0.5 — 980 330 230 250 U-MOSIII
N-ch + P-ch 0.65 0.65
20 ±12 0.5 — 395 190 145 268 U-MOSIII Q2
SSM6L11TU
–20 ±12 –0.5 — — 430 260 218 U-MOSIII
30 ±12 0.5 — — 180 145 245 U-MOSIII
SSM6L12TU
–20 ±12 –0.5 — — 430 260 218 U-MOSIII
30 ±20 1.6 — — — 182 180 U-MOSIII
SSM6L40TU
–30 ±20 –1.4 — — — 403 120 U-MOSIII

–12 ±12 –1.0 — — 240 160 310 U-MOSIII

SSM6E01TU Q1

20 10 0.05 — — 10 Ω — 11 π-MOSVI Q2

P-ch + N-ch
(Load Switch) –20 ±8 –1.8 364 204 136 — 568 U-MOSIV
SSM6E02TU
20 ±10 0.1 15 Ω — 4Ω 3Ω 9.3 π-MOSVI Q1

Q2
–20 ±8 –1.8 — 335 180 144 335 U-MOSIII
SSM6E03TU
20 ±10 0.1 15 Ω — 4Ω 3Ω 9.3 π-MOSVI
✽: Under development * The internal connection diagrams only show the general configurations of the circuits.

MOSFET with a Schottky Barrier Diode Unit: mm

MOSFET SBD
RDS(ON) Max (mΩ) VF Max (V) *Internal Land Pattern
Package Polarity Part Number VDSS VGSS ID Ciss VR IO
Series @IF Connections Example
(V) (V) (A) VGS = VGS = VGS = VGS = (pF) (V) (A)
l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l (A)
SSM5G09TU –12 ±8 –1.5 — — 200 130 550 U-MOSII 12 0.5 0.43 0.5
SSM5G02TU –12 ±12 –1.0 — — 240 160 310 U-MOSII 12 0.5 0.43 0.5
P-ch+ SSM5G10TU –20 ±8 –1.5 — 430 294 213 250 U-MOSIII 20 0.7 0.39 0.5
SBD SSM5G04TU –12 ±12 –1.0 — — 420 240 170 U-MOSII 12 0.5 0.43 0.5
UFV SSM5G11TU –30 ±20 –1.4 — — — 403 120 U-MOSIII-H 30 0.7 0.41 0.5 0.45

SSM5G01TU –30 ±20 –1.0 — — — 800 86 U-MOSII 20 0.5 0.45 0.3

0.8

SSM5H10TU 20 ±10 1.6 247 190 139 119 260 U-MOSIII 20 0.7 0.39 0.5
2.1

1.9

SSM5H12TU 30 ±12 1.9 — 296 177 133 123 U-MOSIII 30 0.7 0.41 0.5
2.0 0.7 SSM5H05TU 20 ±12 1.5 — — 220 160 125 U-MOSIII 12 0.5 0.43 0.5
N-ch+ 0.65 0.65
SSM5H08TU 20 ±12 1.5 — — 220 160 125 U-MOSIII 20 0.5 0.45 0.3
SBD
SSM5H03TU 12 ±12 1.4 — — — 300 125 U-MOSII 12 0.5 0.43 0.5
SSM5H11TU 30 ±20 1.6 — — — 182 180 U-MOSIII 30 0.7 0.41 0.5
SSM5H01TU 30 ±20 1.4 — — — 450 106 U-MOSII 20 0.5 0.45 0.3
SSM5H07TU 20 ±20 1.2 — — — 540 36 π-MOSVII 12 0.5 0.43 0.5
* The internal connection diagrams only show the general configurations of the circuits.

30
 MOSFET with a Schottky Barrier Diode Unit: mm
MOSFET SBD
RDS(ON) Max (mΩ) VF Max (V) *Internal Land Pattern
Package Polarity Part Number VDSS VGSS ID Ciss VR IO
Series @IF Connections Example
(V) (V) (A) VGS = VGS = VGS = VGS = (pF) (V) (A)
l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l (A)
0.95 0.95
SMV

N-ch+
2.8

2.4
30 ±12 3.0 — 138 94 78 270 U-MOSIII 45 0.1 0.6 0.1
SBD SSM5H14F

1.0
2.9 1.1 0.8 0.6 0.8

* The internal connection diagrams only show the general configurations of the circuits.

VS-6 Series … [Part Number: TPC6xxx]

■ Features
• Zener diode between gate and source for all products
• Thin package, with a board mounting height as low as 0.85 mm (max)

■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration Marking Series
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V (nC) (pF)
TPC6004 20 ±12 6 — 24 32 37 — 17 1400 S2C U-MOSIII
TPC6011 ✩✽ 30 ±20 6 20 32 — — — 14 640 S2L U-MOSIV
N-ch
TPC6005 30 ±12 6 Single — 28 35 41 — 19 1420 S2E U-MOSIII
TPC6007-H 30 ±20 5 54 79 — — — 2.8 240 S2G U-MOSIII-H
TPC6006-H 40 ±20 3.9 75 100 — — — 2.4 251 S2F U-MOSIII-H
TPC6103 –12 ±8 –5.5 — 35 55 — 90 20 1520 S3C U-MOSIII
TPC6105 –20 ±8 –2.7 — 110 160 — 300 6 470 S3E U-MOSIII
TPC6107 –20 ±12 –4.5 P-ch — 55 100 180 — 9.8 680 S3G U-MOSIV
Single
TPC6111 –20 ±8 –5.5 — 40 57 — 80 10 700 S3L U-MOSV
TPC6108 –30 ±20 –4.5 60 100 — — — 13 570 S3H U-MOSIV
TPC6109-H –30 ±20 –5 59 83 — — — 7.2 471 S3J U-MOSIII-H
✩: No protection Zener diode between gate and source ✽: Under development

VS-8 Series … [Part Number: TPCF8xxx]

■ Features
• Ultra-low ON-resistance achieved by employing the U-MOS process
• Thin package, with a board mounting height as low as 0.85 mm (max)
• 32% reduction in mounting area compared with the VS-6 (TSOP-6) Series, due to the use of
a high-density flat package
• PD = 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board
■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration Marking Series
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V (nC) (pF)
TPCF8002 ✩ 30 ±20 6 N-ch Single 23 31 — — — TBD TBD F2B U-MOSIV
TPCF8101 –12 ±8 –6 — 28 40 — 85 18 1600 F3A U-MOSIII
TPCF8103 –20 ±8 –2.7 — 110 160 — 300 6 470 F3C U-MOSIII
P-ch Single
TPCF8102 –20 ±8 –6 — 30 41 — 90 19 1550 F3B U-MOSIII
TPCF8104 –30 ±20 –6 28 38 — — — 34 1760 F3D U-MOSIV
TPCF8201 20 ±12 3 N-ch Dual — 49 66 100 — 7.5 590 F4A U-MOSIII
TPCF8301 –20 ±8 –2.7 — 110 160 — 300 6 470 F5A U-MOSIII
TPCF8302 –20 ±10 –3 — 59 95 200 — 11 800 F5B U-MOSIV
P-ch Dual
TPCF8303 –20 ±8 –3 — 58 87 — 250 11 860 F5C U-MOSIV
TPCF8304 –30 ±20 –3.2 72 105 — — — 14 600 F5D U-MOSIV
30 ±20 4 50 77 — — — 10 470 U-MOSIII
TPCF8402 N-ch + P-ch F6B
–30 ±20 –3.2 72 105 — — — 14 600 U-MOSIV
TPCF8A01 20 ±12 3.0 N-ch + SBD — 49 66 100 — 7.5 590 F7A U-MOSIII
TPCF8B01 –20 ±8 –2.7 P-ch + SBD — 110 160 — 300 6 470 F8A U-MOSIII
✩: No protection Zener diode between gate and source

31
 4 Low-VDSS MOSFETs (in Small SMD Packages)

PS-8 Series … [Part Number: TPCP8xxx]

■ Features
• Same mounting area as for the VS-6 (TSOP-6) Series
• Using flat leads and the latest U-MOS process (U-MOSIV), the PS-8 Series offers a 70% reduction in
RDS(ON) compared with the VS-6 Series.
■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Series
VDSS (V) VGSS (V) ID (A) Configuration 10 V 4.5 V 4V 2.5 V 1.8 V (nC) (pF)
TPCP8006 ✩ 20 ±12 9.1 — 10 — 13.7 — 22 1480 U-MOSIV
TPCP8001-H 30 ±20 7.2 16 25 — — — 11 640 U-MOSIII-H
N-ch Single
TPCP8004 ✩ 30 ±20 8.3 8.5 14.5 — — — 26 1270 U-MOSIV
TPCP8005-H ✩ 30 ±20 11 12.9 15.7 — — — 20 1433 U-MOSV-H
TPCP8A05-H ✩ 30 ±20 8 MOSBD 17.5 21.9 — — — 16 1300 U-MOSV-H
TPCP8003-H ✩ 100 ±20 2.2 N-ch Single 180 190 — — — 7.5 360 U-MOSIII-H
TPCP8101 –20 ±8 –5.6 — 30 — 41 90 19 1550 U-MOSIII
TPCP8102 –20 ±12 –7.2 P-ch Single — 18 — 30 — 33 2560 U-MOSIV
TPCP8103-H –40 ±20 –4.8 40 54 — — — 19 800 U-MOSIII-H
TPCP8201 30 ±20 4.2 50 77 — — — 10 470 U-MOSIII
N-ch Dual
TPCP8202 30 ±12 5.5 — 23 — 39 — 28 2150 U-MOSIV
TPCP8203 40 ±20 4.7 40 60 — — — 16 770 U-MOSIII
TPCP8301 –20 ±12 –5 — 31 — 60 — 20 1500 U-MOSIV
P-ch Dual
TPCP8302 –20 ±12 –5 — — 33 45 95 20 1500 U-MOSIV
TPCP8303 –20 ±8 –3.8 — 40 — 57 — 10 640 U-MOSV
20 ±10 0.1 N-ch/P-ch — — 3Ω 4Ω — — — π-MOSVI
TPCP8401
–12 ±8 –5.5 Load Switch — 38 — 58 103 20 1520 U-MOSIII
30 ±20 4.2 50 77 — — — 10 470 U-MOSIII
TPCP8402 N-ch + P-ch
–30 ±20 –3.4 72 105 — — — 14 600 U-MOSIV
30 ±20 4 50 100 — — — 4.6 190 U-MOSIV
TPCP8404 ✩ N-ch + P-ch
–30 ±20 –4 50 100 — — — 13 510 U-MOSV
40 ±20 4.7 40 60 — — — 16 770 U-MOSIII
TPCP8403 N-ch + P-ch
–40 ±20 –3.4 70 105 — — — 15 680 U-MOSIII
TPCP8BA1 –20 ±12 –1.3 — — 180 260 — — — U-MOSII
MOSBD
TPCP8AA1 20 ±12 1.6 — — 105 140 — — — U-MOSII
–32 ±20 –5.5 35 — 49 — — 34 1760 U-MOSIV
TPCP8J01 P-ch + NPN
50 — 0.1 — — — — — — — U-MOSIV + Bip-Tr
✩: No protection Zener diode between gate and source

Chip LGA Series ... [Part Number: TPCL4xxx]

■ Features
• Chip-scale package for high-density board assembly (58% reduction in mounting area compared
with the STP2 package)
■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Series
VDSS (V) VGSS (V) ID (A) Configuration 4.5 V 4V 3.1 V 2.5 V (nC) (pF)
TPCL4201 ✩ 20 ±12 6 31 33 44 52 11.5 720 U-MOSV
TPCL4203 ✩✽ 24 ±12 6 N-ch Dual (36) (38) (46) (55) (10) (685) U-MOSV
TPCL4202 ✩✽ 30 ±12 6 (40) (42) (50) (64) (10) (780) U-MOSV
✩: No protection Zener diode between gate and source ✽: Under development

STP2 Series ... [Part Number: TPCT4xxx]

■ Features
• The combination of a new chip design using Toshiba U-MOSIV process technology and a new small
pump-structured package, offers low ON-resistance.
■ Product Offerings
Absolute Maximum Ratings Circuit RSS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration Series
VSSS (V) VGSS (V) IS (A) 2.5 V 4V 4.5 V (nC) (pF)
TPCT4203 20 ±12 6 49 32 31 11 790 U-MOSIV
N-ch Dual
TPCT4204 30 ±12 6 52 39 38 12 780 U-MOSIV

32
 TSON Advance Series … [Part Number: TPCC8xxx]
■ Features
• The small thermally enhanced package gives a 64% reduction in mounting area compared with
SOP-8, yet an equivalent maximum permissible power dissipation.
■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration (nC) (pF) Series
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V 4V 2.5 V
TPCC8007 ✩✽ 20 ±12 27 — (4.6) — (8.7) TBD TBD U-MOSIV
TPCC8008 ✩ 30 ±25 25 6.8 12.8 — — 30 1600 U-MOSIV
TPCC8003-H ✩ 30 ±20 13 16.9 19.3 — — 8.6 990 U-MOSVI-H
N-ch Single
TPCC8001-H ✩ 30 ±20 22 8.3 10.6 — — 14.3 1900 U-MOSV-H
U-MOSV-H,
TPCC8002-H ✩ 30 ±20 22 8.3 10.6 — — 14.3 1900
rg=3.2Ω(Typ.)
TPCC8A01-H ✩ 30 ±20 21 MOSBD 9.9 12.6 — — 10.1 1430 U-MOSV-H
TPCC8006-H ✩ 30 ±20 22 8.0 9.3 — — 15.0 1700 U-MOSVI-H
N-ch Single
TPCC8005-H ✩ 30 ±20 26 6.4 7.4 — — 19.0 2200 U-MOSVI-H
TPCC8102 ✩ –30 ±20 –15 18.9 — 33.2 — 26 1200 U-MOSV
P-ch Single
TPCC8103 ✩ –30 ±20 –18 12 — 22 — 38 1600 U-MOSV
✩: No protection Zener diode between gate and source ✽: Under development

TSSOP Advance Series … [Part Number: TPCM8xxx]

■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration Series
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V 4V (nC) (pF)
TPCM8001-H 30 ±20 20 9.5 14 — 19 1130 U-MOSIII-H
TPCM8003-H ✩ 30 ±20 21 12.9 15.7 — 11 1433 U-MOSV-H
TPCM8004-H ✩ 30 ±20 24 N-ch Single 11 13.4 — 11 1433 U-MOSV-H
TPCM8006 30 ±20 25 7.0 13.5 — 26 1270 U-MOSIV
TPCM8002-H ✩ 30 ±20 30 6.2 8.2 — 18 2270 U-MOSV-H
TPCM8A05-H ✩ 30 ±20 20 MOSBD 12.9 17.2 — 7.4 1300 U-MOSV-H
TPCM8102 –30 ±20 –25 P-ch Single 7.7 — 16 60 2450 U-MOSV
✩: No protection Zener diode between gate and source

SOP-8 Series … [Part Number: TPC8xxx]

■ Features
• Low ON-resistance and high-speed-switching series are available.
Low ON-resistance series: UMOSIV/V/VI
High-speed-switching series: U-MOSIII-H and U-MOSV-H
• ON-resistance reduction through the use of an AI strap structure
■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration Series
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V 4V 2.5 V (nC) (pF)
TPC8021-H 30 ±20 11 17 25 — — 11 640 U-MOSIII-H
TPC8025 ✩ 30 ±20 11 9 14.5 — — 26 1270 U-MOSIV
TPC8030 ✩ 30 ±25 11 8.5 17 — — 24 1140 U-MOSIV
TPC8037-H ✩ 30 ±20 12 11.4 13.9 — — 11 1433 U-MOSV-H
TPC8038-H ✩ 30 ±20 12 11.4 13.9 — — 11 1433 U-MOSV-H
N-ch
TPC8040-H ✩ 30 ±20 13 Single 9.7 11.1 — — 12 1700 U-MOSVI-H
TPC8041 ✩ 30 ±20 13 7 13.5 — — 27 1270 U-MOSIV
TPC8026 ✩ 30 ±20 13 6.6 10 — — 42 1800 U-MOSIV
TPC8032-H ✩ 30 ±20 15 6.5 8.6 — — 17 2270 U-MOSV-H
TPC8039-H ✩ 30 ±20 17 5.7 6.6 — — 18 2600 U-MOSVI-H
TPC8033-H ✩ 30 ±20 17 5.3 7.2 — — 22 2900 U-MOSV-H
✩: No protection Zener diode between gate and source

33
 4 Low-VDSS MOSFETs (in Small SMD Packages)

■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Series
VDSS (V) VGSS (V) ID (A) Configuration 10 V 4.5 V 4V 2.5 V (nC) (pF)
TPC8028 ✩ 30 ±20 18 4.3 8 — — 45 1800 U-MOSIV
TPC8029 ✩ 30 ±20 18 3.8 7 — — 49 2200 U-MOSIV
TPC8036-H ✩ 30 ±20 18 4.5 5.1 — — 26 3500 U-MOSVI-H
TPC8034-H ✩ 30 ±20 18 3.5 4.5 — — 35 4614 U-MOSV-H
TPC8035-H ✩ 30 ±20 18 3.2 3.6 — — 44 6000 U-MOSVI-H
TPC8042 ✩ 30 ±20 18 3.4 6.5 — — 56 2900 U-MOSIV
TPC8027 ✩ 30 ±20 18 2.7 5.5 — — 113 4200 U-MOSIV
TPC8022-H 40 ±20 7.5 27 35 — — 11 650 U-MOSIII-H
TPC8052-H ✩ 40 ±20 12 N-ch 11.5 13.3 — — 13 1620 U-MOSVI-H
TPC8047-H ✩ 40 ±20 16 Single 7.6 8.8 — — 23 2590 U-MOSVI-H
TPC8046-H ✩ 40 ±20 18 5.7 6.6 — — 31 3545 U-MOSVI-H
TPC8045-H ✩ 40 ±20 18 3.9 4.4 — — 48 5800 U-MOSVI-H
TPC8053-H ✩ 60 ±20 9 22.5 24.2 — — 13 1620 U-MOSVI-H
TPC8050-H ✩ 60 ±20 11 14.5 15.6 — — 21 2590 U-MOSVI-H
TPC8049-H ✩ 60 ±20 13 10.7 11.5 — — 29 3545 U-MOSVI-H
TPC8048-H ✩ 60 ±20 16 6.9 7.4 — — 46 5800 U-MOSVI-H
TPC8051-H ✩ 80 ±20 13 9.7 10.1 — — 43 5800 U-MOSVI-H
TPC8012-H 200 ±20 1.8 400 — — — 11 440 π-MOSV
TPC8208 20 ±12 5 — — 50 70 9.5 780 U-MOSIII
TPC8207 20 ±12 6 — — 20 30 22 2010 U-MOSIII
TPC8211 30 ±20 5.5 36 44 — — 25 1250 U-MOSIII
TPC8212-H 30 ±20 6 21 27 — — 16 840 U-MOSIII-H
N-ch
TPC8216-H ✩ 30 ±20 6.4 20 23 — — 7.6 900 U-MOSVI-H
Dual
TPC8210 30 ±20 8 15 20 — — 75 3530 U-MOSIII
TPC8218-H✩ 60 ±20 3.8 57 64 — — 5.7 640 U-MOSVI-H
TPC8213-H 60 ±20 5 50 56 — — 6 625 U-MOSIII-H
TPC8214-H 100 ±20 2.2 180 190 — — 4.5 360 U-MOSIII-H
TPC8115 –20 ±8 –10 — 10 — 14 115 9130 U-MOSIV
TPC8119 ✩ –30 ±20 –10 13 — 28 — 40 1560 U-MOSV
TPC8121 ✩ –30 ±20 –11 12 — 24 — 42 1770 U-MOSV
TPC8111 –30 ±20 –11 12 — 18 — 107 5710 U-MOSIV
TPC8113 –30 ±20 –11 10 — 18 — 107 4500 U-MOSIV
TPC8123 ✩ –30 –25/+20 –11 9 12.5 — — 68 2940 U-MOSVI
TPC8122 ✩ –30 ±20 –12 P-ch 8 — 16.5 — 62 2450 U-MOSV
TPC8118 ✩ –30 ±20 –13 Single 7 — 15 — 65 2700 U-MOSV
TPC8114 –30 ±20 –18 4.5 — 6.8 — 180 7480 U-MOSIV
TPC8117 ✩ –30 ±20 –18 3.9 — 7.9 — 130 4600 U-MOSV
TPC8120 ✩ –30 –25/+20 –18 3.2 4.2 — — 180 7420 U-MOSVI
TPC8116-H –40 ±20 –7.5 30 37 — — 27 1190 U-MOSIII-H
TPC8110 –40 ±20 –8 25 — 35 — 48 2180 U-MOSIII
30 ±20 6 26 33 — — 27 1240 U-MOSIII
TPC8405
–30 ±20 –4.5 33 42 — — 40 1540 U-MOSIV
40 ±20 6.5 N-ch/P-ch 27 35 — — 11 650 U-MOSIII-H
TPC8406-H Dual
–40 ±20 –6.5 30 37 — — 27 1190 U-MOSIII-H
250 ±20 1.1 1.7 — — — 10 267 π-MOSV
TPC8404
–250 ±20 –0.9 2.55 — — — 12 381 π-MOSV
30 ±20 6 N-ch/ 25 30 — — 17 940 U-MOSIII
TPC8A01 N-ch + SBD
30 ±20 8.5/1 18 21 — — 49 2295 U-MOSIII
TPC8A05-H ✩ 30 ±20 10/1 13.3 17.6 — — 7.4 1300 U-MOSV-H
TPC8A06-H ✩ 30 ±20 12/1 10.1 12.9 — — 9.6 1400 U-MOSV-H
MOSBD
TPC8A03-H ✩ 30 ±20 17/1 5.6 7 — — 19 2640 U-MOSV-H
TPC8A04-H ✩ 30 ±20 18/1 3.6 4.5 — — 29 4400 U-MOSV-H
✩: No protection Zener diode between gate and source

34
 SOP Advance Series … [Part Number: TPCA8xxx]
■ Features
• Low ON-resistance and high-speed-switching series are available.
Low ON-resistance series: UMOSIV/V
High-speed-switching series: U-MOSIII-H, U-MOSV-H and U-MOSVI-H
• High-current, thin and thermally enhanced package
■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Series
VDSS (V) VGSS (V) ID (A) Configuration 10 V 4.5 V 4V 2.5 V 1.8 V (nC) (pF)
TPCA8011-H 20 ±12 40 — 3.5 — 7.5 — 32 2900 U-MOSIII-H
TPCA8040-H ✩ 30 ±20 23 9.4 10.8 — — — 11.7 1700 U-MOSVI-H
TPCA8030-H ✩ 30 ±20 24 11.0 13.4 — — — 83 1433 U-MOSV-H
TPCA8031-H ✩ 30 ±20 24 11.0 13.4 — — — 83 1433 U-MOSV-H
TPCA8018-H ✩ 30 ±20 30 6.2 8.2 — — — 18 2270 U-MOSV-H
TPCA8039-H ✩ 30 ±20 34 5.7 6.6 — — — 19 2600 U-MOSVI-H
TPCA8024 ✩ 30 ±20 35 4.3 7.8 — — — 45 1800 U-MOSIV
TPCA8036-H ✩ 30 ±20 38 4.2 4.8 — — — 26 3500 U-MOSVI-H
TPCA8012-H ✩ 30 ±20 40 4.9 6.8 — — — 22 2900 U-MOSV-H
TPCA8025 ✩ 30 ±20 40 3.5 6.0 — — — 49 2200 U-MOSIV
TPCA8060-H ✩ 30 ±20 45 3.4 3.9 — — — 34 4600 U-MOSVI-H
TPCA8042 ✩ 30 ±20 45 3.3 5.7 — — — 56 2900 U-MOSIV
TPCA8019-H ✩ 30 ±20 45 3.1 4.1 — — — 34 4614 U-MOSV-H
TPCA8026 ✩ 30 ±20 45 2.2 4.5 — — — 113 4200 U-MOSIV
TPCA8028-H ✩ 30 ±20 50 2.8 3.2 — — — 46 6000 U-MOSVI-H
TPCA8020-H 40 ±20 7.5 27 35 — — — 11 650 U-MOSIII-H
TPCA8052-H ✩ 40 ±20 20 11.3 13.1 — — — 13 1620 U-MOSVI-H
N-ch
TPCA8014-H 40 ±20 30
Single
9 14 — — — 22 1365 U-MOSIII-H
TPCA8027-H 40 ±20 30 10 — — — — 23 1430 U-MOSIII-H
TPCA8047-H ✩ 40 ±20 32 7.3 8.5 — — — 23 2590 U-MOSVI-H
TPCA8015-H 40 ±20 35 5.4 7.9 — — — 37 2155 U-MOSIII-H
TPCA8046-H ✩ 40 ±20 38 5.4 6.3 — — — 29 3545 U-MOSVI-H
TPCA8045-H ✩ 40 ±20 46 3.6 4.1 — — — 47 5800 U-MOSVI-H
TPCA8053-H ✩ 60 ±20 15 22.3 24 — — — 13 1620 U-MOSVI-H
TPCA8050-H ✩ 60 ±20 24 14.2 15.3 — — — 21 2590 U-MOSVI-H
TPCA8016-H 60 ±20 25 21 26 — — — 22 1375 U-MOSIII-H
TPCA8049-H ✩ 60 ±20 28 10.4 11.2 — — — 29 3545 U-MOSVI-H
TPCA8048-H ✩ 60 ±20 35 6.6 7.1 — — — 46 5800 U-MOSVI-H
TPCA8051-H ✩ 80 ±20 28 9.4 9.8 — — — 47 5800 U-MOSVI-H
TPCA8006-H 100 ±20 18 67 — — — — 12 780 π-MOSVII
TPCA8022-H 100 ±20 22 26 — — — — 38 2330 U-MOSIII-H
TPCA8009-H 150 ±20 7 350 — — — — 10 600 π-MOSV MACHII
TPCA8010-H 200 ±20 5.5 450 — — — — 10 600 π-MOSV MACHII
TPCA8008-H 250 ±20 4 580 — — — — 10 600 π-MOSV MACHII
TPCA8105 –12 ±8 –6 — 33 — 51 92 18 1600 U-MOSIV
TPCA8103 –30 ±20 –40 4.2 — 6.8 — — 184 7880 U-MOSIV
TPCA8106 ✩ –30 ±20 –40 P-ch 3.7 — 7.8 — — 120 4600 U-MOSV
TPCA8107-H –40 ±20 –7.5 Single 30 37 — — — 27 1190 U-MOSIII-H
TPCA8108 –40 ±20 –40 9.5 — — — — 100 4820 U-MOSIII
TPCA8104 –60 ±20 –40 16 — 24 — — 90 4300 U-MOSIII
TPCA8A05-H ✩ 30 ±20 10 12.9 17.2 — — — 7.4 1300 U-MOSV-H
TPCA8A02-H ✩ 30 ±20 34 5.3 6.7 — — — 19 2640 U-MOSV-H
MOSBD
TPCA8A08-H ✩ 30 ±20 38 4.2 5.3 — — — 24 3500 U-MOSV-H
TPCA8A04-H ✽✩ 30 ±20 42 3.2 4.1 — — — 30 4400 U-MOSV-H
✩: No protection Zener diode between gate and source ✽: Under development

DPAK Series ... [Part Number: TKxxPxxxM1]

■ Features
• High-current, thermally enhanced package

■ Product Offerings
Absolute Maximum Ratings Circuit RDS(ON) Max (mΩ) Qg Typ. Ciss Typ.
Part Number Configuration Series
VDSS (V) VGSS (V) ID (A) 10 V 4.5 V (nC) (pF)
TK40P03M1✩ 30 ±20 40 10.8 14.4 9.4 1150 U-MOSVI-H
TK50P03M1✩ 30 ±20 50 N-ch 7.5 9.8 13.3 1700 U-MOSVI-H
TK40P04M1✩ 40 ±20 40 Single 10.3 13.4 29 1920 U-MOSVI-H
TK50P04M1✩ 40 ±20 50 8.7 10.2 38 2600 U-MOSVI-H
✩: No protection Zener diode between gate and source

35
 4 Low-VDSS MOSFETs (in Small SMD Packages)

4-7 Standard MOSFET Series (ID < 500 mA)

Single MOSFETs
Absolute Maximum Ratings Package
S-Mini USM UFM SSM VSEM CST3
(SOT-346) (SOT-323) (SOT-416) (SOT-723) RDS(ON)
2925 size, 3-pin 2021 size, 3-pin 2021 size, 3-pin 1616 size, 3-pin 1212 size, 3-pin 1006 size, 3-pin Vth Typ. VGS
Polarity VDSS VGSS ID (Max)
(V) (V)
(V) (V) (mA) (Ω)

20 ±10 180 — — — SSM3K35FS SSM3K35MFV SSM3K35CT 0.4 to 1.0 5 (20) 1.2

20 ±10 100 — SSM3K16FU — SSM3K16FS SSM3K16FV SSM3K16CT 0.6 to 1.1 5.2(15) 1.5
20 ±10 500 — — SSM3K36TU SSM3K36FS SSM3K36MFV — 0.35 to 1.0 0.95 (1.52) 1.5
20 ±10 500 — — — SSM3K43FS — — 0.35 to 1.0 0.95 (1.52) 1.5
20 10 100 — — — — SSM3K03FV — 0.7 to 1.3 4 (12) 2.5
20 10 100 — **SSM3K04FU — **SSM3K04FS **SSM3K04FV — 0.7 to 1.3 4 (12) 2.5
20 ±12 400 — SSM3K05FU — — — — 0.6 to 1.1 0.85 (1.20) 2.5
30 ±20 100 SSM3K15F SSM3K15FU — SSM3K15FS SSM3K15FV SSM3K15CT 0.8 to 1.5 4.0 (7.0) 2.5
N-ch
30 ±20 100 — — — SSM3K44FS SSM3K44MFV — 0.8 to 1.5 4.0 (7.0) 2.5
30 ±20 200 2SK2009 — — — — — 0.5 to 1.5 1.2 (2.0) 2.5
30 ±20 400 — SSM3K09FU — — — — 1.1 to 1.8 0.8 (1.2) 4.0
50 ±7 100 — SSM3K17FU — — — — 0.9 to 1.5 22 (40) 2.5
60 ±20 200 2SK1062 — — — — — 2.0 to 3.5 0.6 (1.0) 10
60 ±20 200 SSM3K7002F SSM3K7002FU — — — — 1.0 to 2.5 2.2 (3.3) 4.5
60 ±20 200 SSM3K7002AF SSM3K7002AFU — — — — 1.0 to 2.5 1.8 (3.3) 4.5
60 ±20 200 SSM3K7002BF SSM3K7002BFU — SSM3K7002BFS — — 1.5 to 3.1 2.1 (3.3) 4.5
–20 ±10 –100 — — — SSM3J35FS SSM3J35MFV SSM3J35CT –0.4 to –1.0 11 (44) –1.2
–20 ±10 –100 — SSM3J16FU — SSM3J16FS SSM3J16FV SSM3J16CT –0.6 to –1.1 18 (45) –1.5
–20 ±8 –330 — — SSM3J36TU SSM3J36FS SSM3J36MFV — –0.3 to –1.0 2.23 (3.6) –1.5
–20 ±12 –200 — SSM3J05FU — — — — –0.6 to –1.1 3.2 (4.0) –2.5
P-ch
–30 ±20 –100 SSM3J15F SSM3J15FU — SSM3J15FS SSM3J15FV SSM3J15CT –1.1 to –1.7 14 (32) –2.5
–30 ±20 –200 2SJ305 — — — — — –0.5 to –1.5 2.4 (4.0) –2.5
–30 ±20 –200 — SSM3J09FU — — — — –1.1 to –1.8 3.3 (4.2) –4.0
–50 –7 –50 2SJ343 2SJ344 — — — — –0.8 to –2.5 20 (50) –4.0
–60 ±20 –200 2SJ168 — — — — — –2.0 to –3.5 1.3 (2.0) –10
**: Built-in 1-MΩ gate-source resistor

Dual MOSFETs
Absolute Maximum Ratings Package
US6 UF6 USV ES6 ESV CST6D RDS(ON)
(SOT-363) (SOT-353) (SOT-563) (SOT-553) Vth Typ. VGS Constituent
Polarity VDSS VGSS ID 2021 size, 6-pin 2021 size, 6-pin 2021 size, 5-pin 1616 size, 6-pin 1616 size, 5-pin 1009 size, 6-pin (Max)
(V) (V) Devices
(V) (V) (mA)
(Ω)

20 ±10 180 SSM6N35FU — — SSM6N35FE — — 0.4 to 1.0 5 (20) 1.2 SSM3K35FS×2

20 ±10 100 SSM6N16FU — SSM5N16FU SSM6N16FE SSM5N16FE — 0.6 to 1.1 5.2 (15) 1.5 SSM3K16FU×2
20 ±10 250 — — — — — SSM6N37CTD 0.35 to 1.0 3.07 (5.6) 1.5 —
20 ±10 500 — SSM6N36TU — SSM6N36FE — — 0.35 to 1.0 0.95 (1.52) 1.5 SSM3K36FS×2
20 ±10 500 SSM6N43FU — — — — — 0.35 to 1.0 0.95 (1.52) 1.5 SSM3K43FS×2
20 10 100 — — — SSM6N03FE SSM5N03FE — 0.7 to 1.3 4 (12) 2.5 SSM3K03FE×2
20 10 100 **SSM6N04FU — — — — — 0.7 to 1.3 4 (12) 2.5 SSM3K04FU×2
N-ch×2 20 ±12 400 SSM6N05FU — SSM5N05FU — — — 0.6 to 1.1 0.85 (1.2) 2.5 SSM3K05FU×2
30 ±20 100 SSM6N15FU — SSM5N15FU SSM6N15FE SSM5N15FE — 0.8 to 1.5 4.0 (7.0) 2.5 SSM3K15FU×2
30 ±20 100 SSM6N44FU — — SSM6N44FE — — 0.8 to 1.5 4.0 (7.0) 2.5 SSM3K44FS×2
30 ±20 400 SSM6N09FU — — — — — 1.1 to 1.8 0.8 (1.2) 4.0 SSM3K09FU×2
50 ±7 100 SSM6N17FU — — — — — 0.9 to 1.5 22 (40) 2.5 SSM3K17FU×2
60 ±20 200 SSM6N7002FU — — — — — 1.0 to 2.5 2.2 (3.3) 4.5 SSM3K7002FU×2
60 ±20 200 SSM6N7002AFU — — — — — 1.0 to 2.5 1.8 (3.3) 4.5 SSM3K7002AFU×2
60 ±20 200 SSM6N7002BFU — — SSM6N7002BFE — — 1.5 to 3.1 2.1 (3.3) 4.5 SSM3K7002BFU×2
–20 ±10 –100 SSM6P35FU — — SSM6P35FE — — –0.4 to –1.0 11 (44) –1.2 SSM3J35FS×2
–20 ±10 –100 SSM6P16FU — SSM5P16FU SSM6P16FE SSM5P16FE — –0.6 to –1.1 18 (45) –1.5 SSM3J16FU×2
–20 ±8 –330 — SSM6P36TU — SSM6P36FE — — –0.3 to –1.0 2.23 (3.6) –1.5 SSM3J36FS×2
P-ch×2
–20 ±12 –200 SSM6P05FU — SSM5P05FU — — — –0.6 to –1.1 3.2 (4.0) –2.5 SSM3J05FU×2
–30 ±20 –100 SSM6P15FU — SSM5P15FU SSM6P15FE SSM5P15FE — –1.1 to –1.7 14 (32) –2.5 SSM3J15FU×2
–30 ±20 –200 SSM6P09FU — — — — — –1.1 to –1.8 3.3 (4.2) –4.0 SSM3J09FU×2
20 ±10 180 0.4 to 1.0 5 (20) 1.2 SSM3K35FS
SSM6L35FU — — SSM6L35FE — —
–20 ±10 –100 –0.4 to –1.0 11 (44) –1.2 +SSM3J35FS
20 ±10 100 0.6 to 1.1 5.2 (15) 1.5 SSM3K16FS
— — — SSM6L16FE — —
–20 ±10 –100 –0.6 to –1.1 18 (45) –1.5 +SSM3J16FS
N-ch+ 20 ±10 500 0.35 to 1.0 0.95 (1.52) 1.5 SSM3K36FS
— SSM6L36TU — SSM6L36FE — —
P-ch –20 ±8 –330 –0.3 to –1.0 2.23 (3.6) –1.5 +SSM3J36FS
20 ±12 400 0.6 to 1.1 0.85 (1.2) 2.5 SSM3K05FU
SSM6L05FU — — — — —
–20 ±12 –200 –0.6 to –1.1 3.2 (4.0) –2.5 +SSM3J05FU
30 ±20 400 1.1 to 1.8 0.8 (1.2) 4.0 SSM3K09FU
SSM6L09FU — — — — —
–30 ±20 –200 –1.1 to –1.8 3.3 (4.2) –4.0 +SSM3J09FU
**: Built-in 1-MΩ gate-source resistor

36
 5 Low-VDSS, High-Qg MOSFETs

5-1 TO-220SM(W) Series

The TO-220SM(W) package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a
high current-carrying capability.
■ Features
• Achieves low ON-resistance, low package inductance and low thermal resistance due to the use of Cu connectors.
• Achieves a high current-carrying capability due to the use of a wide source terminal (ID (DC) = 150 A max)
• AEC-Q101-qualified at a channel temperature (Tch) of 175˚C
• Thin package: 3.7-mm (max) thick, much thinner than the previous TO-220SM package with a thickness of 4.7 mm (max)
■ Characteristics of the WARP Series

<TO-220SM> <TO-220SM(W)>

Low ON-resistance
Cu connectors
Low package inductance
Low thermal resistance

■ Package ■ Comparison of the Source Lead Temperature

<Previous>TO-220SM <New>TO-220SM(W)

Front View 250

Source Lead Temperature (@180 Seconds)

200

Approx. twofold
current drive
150 capability

Predecessors

100

50

TO-220SM(W)

0
0 20 40 60 80 100 120 140 160

Drain Current, ID(A)@180 Seconds

■ Product Offerings
Absolute Maximum Ratings RDS(ON) Max (mΩ) Ciss Typ. Qg Typ.
Part Number Series
VDSS (V) VGSS (V) ID (A) VGS = 10 V VGS = 6 V (pF) (nC)
TJ120F06J3 –60 ±20 –120 8 — 11500 258 U-MOSIII
TK100F04K3 40 ±20 100 3 — 4500 102 U-MOSIV
TK100F04K3L 40 ±20 100 3 4.5 4980 105 U-MOSIV
TK150F04K3 40 ±20 150 2.1 — 7500 166 U-MOSIV
TK150F04K3L 40 ±20 150 2.1 3.2 9400 190 U-MOSIV
TK100F06K3 60 ±20 100 5 — 4500 98 U-MOSIV
TK130F06K3 60 ±20 130 3.4 — 8400 170 U-MOSIV
TK50F15J1 150 ±20 50 30 — 4300 75 U-MOSIII

37
 5 Low-VDSS, High-Qg MOSFETs

5-2 U-MOS (Trench Type) Series

Fabricated using a trench structure, the U-MOS Series ultra-high integration density and thus

Planar Structure Source Gate Trench (U-MOS) Structure Source Gate

Poly Si
N N N N Poly Si
P P P N+ N+ N+ N+

P P P
N
N

N+ N+

Drain Drain

■ Features
• High density through the use of submicron technology
• 60% reduction in RDS (ON) by per unit area (as compared with the maximum RDS (ON) of L2-π-MOSV)
• Guaranteed avalanche capability and improved di/dt rate

■ Product Offerings
Part Absolute Maximum Ratings RDS(ON) Max (mΩ) Qg Typ.
Applications Package Series
Number VDSS (V) VGSS (V) ID (A) PD (W) 10 V 6V 4.5 V 4V (nC)
2SJ668 –60 ±20 –5 20 PW-Mold 170 — — 250 15
motor drive 2SJ681 –60 ±20 –5 20 New PW-Mold2 170 — — 250 15
Solenoids 2SJ669 –60 ±20 –5 1.2 TPS 170 — — 250 15
U-MOSIII
Lamp drivers TPCA8104 –60 ±20 –40 45 SOP Advance 16 — — 24 90
DC-DC converters TJ70A06J3 –60 ±20 –70 54 TO-220SIS 8.0 — 10 — 246
TJ120F06J3 –60 ±20 –120 300 TO-220SM(W) 8.0 — — — 258
LCD backlight inverter TJ20A10M3 ✩ –100 ±20 –20 35 TO-220SIS 90 — — — 120 U-MOSVI
2SK3754 30 ±20 5 25 TO-220NIS 89 — 99 — 2.5
2SK3846 40 ±20 26 25 TO-220NIS 16 — 28 — 40
U-MOSIII
2SK3847 40 ±20 32 30 TO-220SM 16 — 28 — 40
TK70J04J3 40 ±20 70 150 TO-3P(N) 3.8 — 8.3 — 210
TK70X04K3 ✩ 40 ±20 70 80 TFP 5.6 — — — 62
U-MOSIV
TK70X04K3Z 40 ±20 70 80 TFP 5.6 — — — 62
2SK3843 40 ±20 75 125 TFP 3.5 — 8.0 — 210 U-MOSIII
TK80X04K3 ✩ 40 ±20 80 125 TFP 3.5 — — — 100
TK100F04K3 ✩ 40 ±20 100 200 TO-220SM(W) 3.0 — — — 102
TK100F04K3L 40 ±20 100 200 TO-220SM(W) 3.0 4.5 — — 105 U-MOSIV
TK150F04K3 ✩ 40 ±20 150 300 TO-220SM(W) 2.1 — — — 166
motor drive TK150F04K3L 40 ±20 150 300 TO-220SM(W) 2.1 3.2 — — 190
Solenoids 2SK4017 60 ±20 5 20 New PW-Mold2 100 — — 150 15
Lamp drivers 2SK4033 60 ±20 5 20 New PW-Mold 100 — — 150 15
DC-DC converters TK30A06J3A 60 ±20 30 25 TO-220SIS 26 — 35 — 36 U-MOSIII
2SK3662 60 ±20 35 35 TO-220NIS 12.5 — — 19 91
2SK3844 60 ±20 45 45 TO-220NIS 5.8 — — — 196
TK70X06K3 ✩ 60 ±20 70 80 TFP 8.0 — — — 62 U-MOSIV
2SK3845 60 ±20 70 125 TO-3P(N) 5.8 — — — 196
2SK3842 60 ±20 75 125 TFP 5.8 — — — 196 U-MOSIII
2SK4034 60 ±20 75 125 TFP 5.8 — 10 — 196
2SK3940 75 ±20 70 150 TO-3P(N) 7.0 — — — 200 U-MOSIII
TK25A10K3 ✩ 100 ±20 25 25 TO-220SIS 40 — — — 34 U-MOSIV
LCD backlight inverter TK40X10J1 100 ±20 40 125 TFP 20 — — — 59
U-MOSIII
TK50F15J1 150 ±20 50 300 TO-220SM(W) 30 — — — 75
✩: No protection Zener diode between gate and source

38
 5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)

■ Features
• Low ON-resistance achieved by high density through the use of submicron technology
• Guaranteed avalanche capability
• High power dissipation achieved by having the series housed in the TO-220(W) package with an
exposed heatsink on the bottom of the package
■ Comparisons Between Synchronous Rectification MOSFETs
TK80A08K3 TK60A08J1
Characteristic Symbol Test Conditions Min Typ. Max Min Typ. Max Unit
+IGSS VGS condition*, VDS = 0 V — — 1 — — 10 μA
Gate leakage current
-IGSS VGS condition*, VDS = 0 V — — –1 — — –10 μA
Drain cut-off current IDSS VDS = 75 V, VGS = 0 V — — 10 — — 10 μA
Drain-source V (BR) DSS ID = 10 mA, VGS = 0 V 75 — — 75 — — V
breakdown voltage V (BR) DSX ID = 10 mA, VGS = –20 V 50 — — 60 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 1.1 — 2.3 V
Drain-source
RDS (ON) VGS = 10 V, ID = 40 A — 3.6 4.5 — 6.2 7.8 mΩ
ON-resistance
Input capacitance Ciss — 8200 — — 5450 — pF
VDS = 10 V, VGS = 0 V
Reverse transfer f = 1 MHz
Crss — 770 — — 320 — pF
capacitance
Forward voltage VDSF IDR = 80 A, VGS = 0 V — –0.9 –1.2 — –0.9 –1.2 V
*: Test conditions: TK80A08K3: VGS = ± 20 V, TK60A08J1: VGS = ±16 V

■ Efficiency Test Circuit

130-W(19.5-V/6.7-A) Flyback Converter

VIN = 100 Vac
Synchronous 90.5
U-MOSIV TK80A08K3
Rectifier U-MOSIII-H TK60A08J1
90.0 3 paralleled 100-V/30-A Schottky barrier diodes
Efficiency (%)

+
– VOUT 89.5

+ PFC + 89.0
VIN – – MAIN
TK60A08J1 88.5
vs
TK80A08K3 88.0
0 1 2 3 4 5 6 7
Pout (W)

Efficiency approx. 1% higher than Schottky barrier diodes

■ Product Offerings
Absolute Maximum Ratings R DS(ON) (mΩ) @VGS = 10 V Qg (nC) Typ. Qsw (nC) Typ.
Part Number Package Series
VDSS (V) VGSS (V) ID (A) PD (W) Typ. Max VDS = VDSS x 0.8, ID = ID (DC)
TK70D06J1 60 ±20 70 140 5.1 6.4 87 30 TO-220(W) U-MOSIII-H
TK70A06J1 60 ±20 70 45 5.1 6.4 87 30 TO-220SIS U-MOSIII-H
TK60D08J1 75 ±20 60 140 6.2 7.8 86 27 TO-220(W) U-MOSIII-H
TK60A08J1 75 ±20 60 45 6.2 7.8 86 27 TO-220SIS U-MOSIII-H
TK40A08K3 75 ±20 40 42 7.0 9.0 80 — TO-220SIS U-MOSIV
TK80D08K3 75 ±20 80 100 3.6 4.5 175 80 TO-220(W) U-MOSIV
TK80A08K3 75 ±20 80 40 3.6 4.5 175 80 TO-220SIS U-MOSIV
TK40A10K3 100 ±20 40 40 11.5 15 85 40 TO-220SIS U-MOSIV
TK40D10J1 100 ±20 40 100 11.5 15 76 25 TO-220(W) U-MOSIII-H
TK40A10J1 100 ±20 40 40 11.5 15 76 25 TO-220SIS U-MOSIII-H
TK40X10J1 100 ±20 40 125 15 20 59 25 TFP U-MOSIII-H
TK55D10J1 100 ±20 55 140 8.4 10.5 110 33 TO-220(W) U-MOSIII-H
TK55A10J1 100 ±20 55 45 8.4 10.5 110 33 TO-220SIS U-MOSIII-H
TK50X15J1 150 ±20 50 125 22 30 75 33 TFP U-MOSIII-H

39
 6 Mid- and High-VDSS MOSFETs

6-1 π-MOSVII Series (VDSS = 450 V to 650 V)

The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip
design and is available with a greatly wider range of electrical characteristics.
■ Features
• 40% reduction in Qg from π-MOSVI due to optimized chip design
• Available in 50-V steps of VDSS and in finer steps of RDS(ON).
• Rated avalanche and reverse recovery current capabilities
■ Performance Comparisons Between Series π-MOSVII π-MOSVI
π-MOSVII and π-MOSVI Devices (600 V/10 A) Part Number TK10A60D 2SK3569
Ratings 600 V/10 A 600 V/10 A
Package TO-220SIS TO-220SIS
Characteristic Symbol Test Conditions Min Typ. Max Min Typ. Max Unit
Gate leakage current ± IGSS VGS condition*, VDS = 0 V — — ±1 — — ± 10 μA
Drain cut-off current IDSS VDS = 600 V, VGS = 0 V — — 100 — — 100 μA
Drain-source breakdown voltage V(BR)DSS ID = +10 mA, VGS = 0 V 600 — — 600 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 2.0 4.0 V
Drain-source ON-resistance RDS(ON) VGS = 10 V, ID = 5 A — — 0.75 — — 0.75 Ω
Total gate charge Qg VDD = 400 V, VGS = 10 V, ID = 10 A — 25 — — 42 — nC
Diode forward voltage VDSF IDR =10 A, VGS = 0 V — — –1.7 — — –1.7 V
*: Test conditions: TK10A60D: VGS = ± 30 V, 2SK3569: VGS = ± 25 V

■ Efficiency Test Circuit

120-W (20-V/6-A) Flyback Converter 90%
Synchronous Efficiency greater than a π-MOSVI MOSFET
VIN = 100 Vac, VGS = +10, −0 V 88%
Rectifier Rg = 4.7 Ω
86% Rg = 4.7 Ω
Efficiency

+
84% Rg = 47 Ω
– VOUT
Rg = 47 Ω
82%
+ PFC + 80%
VIN – – MAIN
2SK3569 2SK3569
78% TK10A60D
vs
76%
TK10A60D 0 20 40 60 80 100 120 140
Pout (W)

■ Product Offerings
Absolute Maximum R DS(ON) (Ω) Equivalent Absolute Maximum R DS(ON) (Ω) Equivalent
Part Number Ratings π-MOSVI Package Part Number Ratings π-MOSVI Package
VDSS (V) ID (A) VGS = 10 V Part VDSS (V) ID (A) VGS = 10 V Part
TK13A45D 450 13 0.46 2SK3743 TO-220SIS TK8A55DA 7.5 1.07 — TO-220SIS
TK4A50D 4 2.0 — TO-220SIS TK9A55DA 8.5 0.86 — TO-220SIS
TK5A50D 5 1.5 2SK3563 TO-220SIS TK11A55D 11 0.63 — TO-220SIS
TK6A50D 6 1.4 — TO-220SIS TK12A55D 12 0.57 — TO-220SIS
TK7A50D 7 1.2 — TO-220SIS TK12J55D 550 12 0.57 — TO-3P(N)
TK8A50DA 7.5 1.0 — TO-220SIS TK13A55DA 12.5 0.48 — TO-220SIS
TK8A50D 8 0.85 2SK3561 TO-220SIS TK14A55D 14 0.37 — TO-220SIS
TK10A50D 10 0.72 — TO-220SIS TK16A55D ✽ 16 0.33 — TO-220SIS
TK11A50D 500 11 0.6 — TO-220SIS TK16J55D 16 0.37 — TO-3P(N)
TK12A50D 12 0.52 2SK3568 TO-220SIS TK2Q60D 2 5.0 2SK4002 New PW-Mold 2
TK13A50DA 12.5 0.47 — TO-220SIS TK3A60DA 2.5 2.8 — TO-220SIS
TK13A50D 13 0.4 2SK4012 TO-220SIS TK4A60DA 3.5 2.2 2SK3567 TO-220SIS
TK15J50D 15 0.4 2SK4107 TO-3P(N) TK4A60DB 3.7 2 — TO-220SIS
TK15A50D 15 0.3 2SK3934 TO-220SIS TK4A60D 4 1.7 — TO-220SIS
TK18A50D 18 0.27 — TO-220SIS TK6A60D 6 1.25 2SK3562 TO-220SIS
600
TK20J50D 20 0.27 2SK4108 TO-3P(N) TK8A60DA 7.5 1 2SK3667 TO-220SIS
TK4A53D 4 1.7 — TO-220SIS TK10A60D 10 0.75 2SK3569 TO-220SIS
TK5A53D 5 1.5 2SK3563 TO-220SIS TK11A60D 11 0.65 — TO-220SIS
TK6A53D 6 1.3 — TO-220SIS TK12A60D 12 0.55 — TO-220SIS
525
TK6P53D 6 1.3 — D-PAK TK13A60D 13 0.43 2SK3797 TO-220SIS
TK12A53D 12 0.58 — TO-220SIS TK15A60D 15 0.37 — TO-220SIS
TK12X53D 12 0.58 2SK3398 TFP TK5A65D 5 1.43 — TO-220SIS
TK4A55DA 3.5 2.45 — TO-220SIS TK6A65D 6 1.11 — TO-220SIS
650
TK4A55D 4 1.9 — TO-220SIS TK8A65D 8 0.84 — TO-220SIS
550
TK5A55D 5 1.7 — TO-220SIS TK12A65D ✽ 12 0.50 — TO-220SIS
TK6A55DA 5.5 1.48 — TO-220SIS ✽: Under development

40
 6-2 Super-Junction DTMOS Series (VDSS = 600 V, 650 V)

The DTMOS devices employ a new super-junction structure that enables an ultra-low ON-resistance with the maximum
VDSS rating of 600 V. The DTMOS Series helps reduce the power consumption and size of electronic equipment.
■ Features
• Low ON-resistance TK40J60T: 80 mΩ (max) @VGS = 10 V, ID = 20 A
• Low gate charge TK20A60U: Qg = 27 nC typ., 600 V / 20 A
• The rugged internal drain-source diode is not damaged at di/dt = 500 A/μs (@VDS = 400 V, 150˚C).
■ Product Offerings
Absolute Maximum Ratings R DS(ON) Max (Ω) Qg Typ. Ciss Typ.
Part Number Package Series
VDSS (V) ID (A) VGS = 10 V (nC) (pF)
TK12A60U TO-220SIS
TK12D60U 12 0.4 14 720 TO-220(W) DTMOSII
TK12J60U TO-3P(N)
TK15J60T 15 0.3 21 1200 TO-3P(N) DTMOSI
TK15A60U TO-220SIS
TK15D60U 15 0.3 17 950 TO-220(W) DTMOSII
TK15J60U TO-3P(N)
TK20A60T 600 TO-220SIS
TK20D60T 20 0.19 30 1580 TO-220(W) DTMOSI
TK20J60T TO-3P(N)
TK20A60U TO-220SIS
TK20D60U 20 0.19 27 1470 TO-220(W) DTMOSII
TK20J60U TO-3P(N)
TK40J60T 40 0.08 67 3900 TO-3P(N) DTMOSI
TK50J60U ✽ 50 0.065 70 4300 TO-3P(N) DTMOSII
TK13A65U 650 13 0.38 17 950 TO-220SIS DTMOSII
✽: Under development

■ Performance Comparisons Between the New DTMOS and Conventional ■ Figure-of-Merit (FOM) Comparison
MOSFET (π-MOSVI) Devices (600 V/20 A) Ron x Qg, the product of ON-resistance
and total gate charge, is reduced by 62%,
Series DTMOSII π-MOSVI compared with the conventional MOSFETs
Part Number TK20J60U 2SK3911 with the same chip size.
Ratings 600 V/20 A 600 V/20 A *Ron x Qg is a figure-of-merit index for the switching speed
of MOSFETs.
Characteristic Symbol Test Conditions Min Typ. Max Min Typ. Max Unit
Gate leakage current ± IGSS VGS condition*, VDS = 0 V — — ±1 — — ± 10 μA 14
Drain cut-off current 62%
IDSS VDS = 600 V, VGS = 0 V — — 100 — — 100 μA reduction
12
Drain-source 15%
V(BR)DSS ID = 10 mA, VGS = 0 V 600 — — 600 — — V
Ron x Qg (Ω·nC)

breakdown voltage 10 reduction

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 — 5.0 2.0 — 4.0 V 8
Drain-source
RDS(ON) VGS = 10 V, ID = 10 A — 0.165 0.19 — 0.22 0.32 Ω 6
ON-resistance
VDD = 400 V, VGS = 10 V 4
Total gate charge Qg — 27 — — 60 — nC
ID = 20 A
2
Diode forward voltage VDSF IDR = 20 A, VGS = 0 V — — –1.7 — — –1.7 V
*: Test conditions: TK20J60U: VGS = ± 30 V, 2SK3911: VGS = ± 25 V 0
π-MOSVI DTMOSI DTMOSII

■ Performance Characteristics of the New DTMOS Series

TK20A60U Electrical Characteristics

Qg Avalanche Breakdown Internal Diode Reverse Recovery

VDD: 400 V, ID = 20 A, 25˚C VDD = 90 V, L = 1 mH VDD = 400 V, di/dt = 500 A/μs
VGS = ±15 V, Rg = 25 Ω, 25˚C IDR = 20 A, VGS = 0 V, 150˚C

VGS: 2 V/div t: 10 μs/div t: 100 ns/div

Qg: 27nC VGS: 20 V/div

Qg: 4 nC/div Not damaged at
500 A/μs @150°C

ID: 10 A/div VDS: 200 V/div

20 A
IF: 20 A/div

VDS: 100 V/div VDS:100 V/div

41
 6 Mid- and High-VDSS MOSFETs

6-3 High-speed π-MOS Series (VDSS = 450 V to 600 V)

To support the development of high-efficiency equipment, Toshiba has developed two series of high-speed power
MOSFETs: a high-speed switching series for AC adapters and switching power supplies; and a high-speed diode series for
motor controllers and inverter circuits.
• MACH Series: Achieves a higher switching speed than the existing π-MOS Series, which is currently well established in the market.
• High-Speed Diode Series: Achieves a higher internal diode speed by using lifetime control.
■ Product Offerings
• MACH Series
Absolute Maximum Ratings RDS(ON) Qg
Applications Part Number Package Max VGS ID Typ. Standard Type Series
VDSS (V) ID (A) PD (W) (Ω) (V) (A) (nC)
2SK3310 450 10 40 TO-220NIS 0.65 10 5 23 2SK3126
2SK3309 450 10 65 TO-220FL/SM 0.65 10 5 23 —
2SK3743 450 13 40 TO-220NIS 0.4 10 6 34 —
AC adapters 2SK3403 450 13 100 TO-220FL/SM 0.4 10 6 34 — MACH-I
Switching power 2SK3312 600 6 65 TO-220FL/SM 1.25 10 3 25 2SK2777
supplies 2SK3437 600 10 80 TO-220FL/SM 1 10 5 28 2SK2996
2SK3399 600 10 100 TO-220FL/SM 0.75 10 5 35 2SK2866
2SK3907 500 23 150 TO-3P(N) 0.23 10 11.5 60 —
MACH-II
2SK3911 600 20 150 TO-3P(N) 0.32 10 10 60 —

• High-Speed Diode Series (HSD Series)

Absolute Maximum Ratings RDS(ON) trr
Applications Part Number Package Max VGS ID Typ. Standard Type
VDSS (V) ID (A) PD (W) (Ω) (V) (A) (ns)
2SK3868 500 5 35 TO-220SIS 1.7 10 2.5 150 2SK3563
2SK3417 500 5 50 TO-220FL/SM 1.8 10 2.5 60 2SK2991
2SK4042 500 8 40 TO-220SIS 0.97 10 4 185 2SK3561
2SK3313 500 12 40 TO-220NIS 0.62 10 6 90 2SK2842
Motor control
2SK3314 500 15 150 TO-3P(N) 0.49 10 7 105 2SK2698
Inverters
2SK3131 500 50 250 TO-3P(L) 0.11 10 25 105 2SK3132
Switching power
supplies 2SK3936 500 23 150 TO-3P(N) 0.25 10 11.5 380 2SK3907
2SK3947 600 6 40 TO-220SIS 1.4 10 3 150 2SK3562
2SK4015 600 10 45 TO-220SIS 0.86 10 5 170 2SK3569
2SK4016 600 13 50 TO-220SIS 0.50 10 6.5 160 2SK3911
2SK3906 600 20 150 TO-3P(N) 0.33 10 10 400 2SK3797

■ Characteristics of the MACHII Series ■ Characteristics of the High-Speed Diode Series

40% reduction in Qg losses Faster internal diode

600-V MACH-II 2SK3911 2SK3313 (High Speed)

ID = 10 A/div

Qg = 56 nC 0
VDS: 100 V/div

VGS: 2 V/div

10 nC/div
200 ns/div

40% Qg
reduction Higher Speed
Standard Series 2SK2842 (Standard Series)

ID = 10 A/div

Qg = 92 nC
0
VDS: 100 V/div

VGS: 2 V/div

10 nC/div
200 ns/div

42
 6-4 π-MOS Series

■ π-MOSVI Series (VDSS = 450 V to 600 V)

Absolute Maximum Ratings R DS(ON) Max (Ω) Qg Typ. Ciss Typ. Equivalent
Series Part Number Package
VDSS (V) ID (A) VGS = 10 V (nC) (pF) Predecessor Part
2SK3757 2 2.45 9 330 2SK3543 TO-220SIS
2SK3766 2 2.45 8 270 2SK3543 TO-220SIS
2SK3869 450 10 0.68 28 1050 2SK3407 TO-220SIS
2SK3935 17 0.25 62 3100 — TO-220SIS
2SK3904 19 0.26 62 3100 — TO-3P(N)
2SK3563 5 1.5 16 550 2SK2662 TO-220SIS
2SK3863 5 1.5 16 550 — DP
2SK4103 5 1.5 16 550 2SK3863 New Pw-Mold
2SK3561 8 0.85 28 1050 2SK2543 TO-220SIS
2SK3568 12 0.52 42 1500 2SK2842 TO-220SIS
500
2SK4012 13 0.4 50 2400 — TO-220SIS
π-MOSVI
2SK3934 15 0.3 62 3100 — TO-220SIS
2SK4107 15 0.4 48 2450 2SK2698 TO-3P(N)
2SK3905 17 0.31 62 3100 — TO-3P(N)
2SK4108 20 0.27 70 3400 2SK2837 TO-3P(N)
2SK3767 2 4.5 9 320 2SK3067 TO-220SIS
2SK3567 3.5 2.2 17 550 2SK2750 TO-220SIS
2SK3562 6 1.25 28 1050 2SK2545 TO-220SIS
2SK3667 600 7.5 1.0 33 1300 2SK2996 TO-220SIS
2SK3569 10 0.75 42 1500 2SK2843 TO-220SIS
2SK3797 13 0.43 62 3150 — TO-220SIS
2SK3903 14 0.44 62 3100 — TO-3P(N)

■ π-MOSIV Series (VDSS = 800 V to 900 V)

Absolute Maximum Ratings R DS(ON) Max (Ω) Qg Typ. Ciss Typ. Equivalent
Series Part Number Package
VDSS (V) ID (A) VGS = 10 V (nC) (pF) Predecessor Part
2SK3633 7 1.7 35 1500 2SK2746 TO-3P(N)
2SK3879 6.5 1.7 35 1500 — TO-220FL/SM
800
2SK3880 6.5 1.7 35 1500 — TO-3P(N)IS
2SK4013 6 1.7 45 1400 — TO-220SIS
2SK3566 2.5 6.4 12 470 2SK2718 TO-220SIS
2SK3564 3 4.3 17 700 2SK2700 TO-220SIS
2SK3798 4 3.5 26 800 — TO-220SIS
2SK3565 5 2.5 28 1150 2SK2717 TO-220SIS
π-MOSIV
2SK3742 5 2.5 25 1150 2SK2717 TO-220SIS
2SK3700 5 2.5 28 1150 2SK2610 TO-3P(N)
900
2SK4014 6 2.0 45 1400 — TO-220SIS
2SK4115 7 2.0 45 1650 2SK2749 TO-3P(N)
2SK3799 8 1.3 60 2200 — TO-220SIS
2SK3473 9 1.6 38 1450 — TO-3P(N)
2SK3878 9 1.3 60 2200 2SK2611 TO-3P(N)
2SK4207 13 0.95 45 2790 — TO-3P(N)

■ L2-π-MOSV and VI Series (VDSS = 30 V to 100 V)

VDSS ID PD RDS(ON) (Ω) RDS(ON) (Ω) Qg Typ.
Part Number (V) (A) (W) Package
Typ. Max VGS (V) ID (A) Typ. Max VGS (V) ID (A) (nC)
2SJ537 –50 –5 0.9 LSTM 0.16 0.19 –10 –2.5 0.27 0.34 –4 –1.3 18
2SJ360 –60 –1 0.5 PW-Mini 0.55 0.73 –10 –0.5 0.86 1.2 –4 –0.5 6.5
2SJ507 –60 –1 0.9 LSTM 0.5 0.7 –10 –0.5 0.72 1.0 –4 –0.5 5.6
2SJ438 –60 –5 25 TO-220NIS 0.16 0.19 –10 –2.5 0.24 0.28 –4 –2.5 22
2SJ378 –60 –5 1.2 TPS 0.16 0.19 –10 –2.5 0.24 0.28 –4 –2.5 22
2SJ349 –60 –20 45 TO-220NIS 0.033 0.045 –10 –10 0.05 0.09 –4 –10 90
2SJ401 –60 –20 100 TO-220FL/SM 0.033 0.045 –10 –10 0.05 0.09 –4 –10 90
2SJ334 –60 –30 45 TO-220NIS 0.029 0.038 –10 –15 0.046 0.06 –4 –15 110
2SJ402 –60 –30 100 TO-220FL/SM 0.029 0.038 –10 –15 0.046 0.06 –4 –15 110
2SJ508 –100 –1 1.5 PW-Mini 1.34 1.9 –10 –0.5 1.68 2.5 –4 –0.5 6.3
2SJ509 –100 –1 0.9 LSTM 1.34 1.9 –10 –0.5 1.68 2.5 –4 –0.5 6.3
2SJ380 –100 –12 35 TO-220NIS 0.15 0.21 –10 –6 0.25 0.32 –4 –6 48
2SJ412 –100 –16 60 TO-220FL/SM 0.15 0.21 –10 –6 0.25 0.32 –4 –6 48
2SJ619 –100 –16 75 TFP 0.15 0.21 –10 –6 0.25 0.32 –4 –6 48
2SJ620 –100 –18 25 TFP 0.063 0.09 –10 –9 0.085 0.12 –4 –9 140
2SJ464 –100 –18 45 TO-220NIS 0.064 0.09 –10 –9 0.085 0.12 –4 –9 140
2SK3506 30 45 100 TO-3P(N) 0.016 0.02 10 25 — — — — 39
2SK2989 50 5 0.9 LSTM 0.12 0.15 10 2.5 0.24 0.33 4 1.3 6.5
2SK2614 50 20 40 DP 0.032 0.046 10 10 0.055 0.08 4 5 25
2SK2507 50 25 30 TO-220NIS 0.034 0.046 10 12 0.058 0.08 4 6 25
2SK2886 50 45 40 TO-220NIS 0.014 0.02 10 25 0.027 0.036 4 25 66
2SK3051 50 45 40 TO-220FL/SM 0.024 0.03 10 25 — — — — 36
2SK2744 50 45 125 TO-3P(N) 0.015 0.02 10 25 — — — — 68
2SK2550 50 45 100 TO-3P(N) 0.024 0.030 10 25 — — — — 36
2SK2551 50 50 150 TO-3P(N) 0.0072 0.011 10 25 — — — — 130
2SK2745 50 50 150 TO-3P(N) 0.007 0.0095 10 25 0.011 0.016 4 25 130

43
 6 Mid- and High-VDSS MOSFETs

VDSS ID PD RDS(ON) (Ω) RDS(ON) (Ω) Qg Typ.

Part Number Package
(V) (A) (W) Typ. Max VGS (V) ID (A) Typ. Max VGS (V) ID (A) (nC)
2SK2615 60 2 0.5 PW-Mini 0.23 0.3 10 1 0.33 0.44 4 1 6
2SK2961 60 2 0.9 LSTM 0.2 0.27 10 1 0.26 0.38 4 1 5.8
2SK2229 60 5 1.2 TPS 0.12 0.16 10 2.5 0.2 0.3 4 1.3 12
2SK2782 60 20 40 DP 0.039 0.055 10 10 0.06 0.090 4 5 25
2SK2232 60 25 35 TO-220NIS 0.036 0.046 10 12 0.057 0.08 4 12 38
2SK2311 60 25 40 TO-220FL/SM 0.036 0.046 10 12 0.057 0.08 4 12 38
2SK2385 60 36 40 TO-220NIS 0.022 0.03 10 18 0.04 0.055 4 15 60
2SK2233 60 45 100 TO-3P(N) 0.022 0.03 10 25 0.04 0.055 4 15 60
2SK2266 60 45 65 TO-220FL/SM 0.022 0.03 10 25 0.04 0.055 4 15 60
2SK2376 60 45 100 TO-220FL/SM 0.013 0.017 10 25 0.019 0.025 4 25 110
2SK2398 60 45 100 TO-3P(N) 0.022 0.03 10 25 — — — — 60
2SK2173 60 50 125 TO-3P(N) 0.013 0.017 10 25 0.019 0.025 4 25 110
2SK2445 60 50 125 TO-3P(N) 0.014 0.018 10 25 — — — — 110
2SK2267 60 60 150 TO-3P(L) 0.008 0.011 10 30 0.012 0.015 4 30 170
2SK2313 60 60 150 TO-3P(N) 0.008 0.011 10 30 0.012 0.015 4 30 170
2SK2962 100 1 0.9 LSTM 0.5 0.7 10 0.5 0.65 0.95 4 0.5 6.3
2SK2963 100 1 0.5 PW-Mini 0.5 0.7 10 0.5 0.65 0.95 4 0.5 6.3
2SK2200 100 3 1.3 TPS 0.28 0.35 10 2 0.36 0.45 4 2 13.5
2SK2201 100 3 20 New PW-Mold 0.28 0.35 10 2 0.36 0.45 4 2 13.5
2SK4018 100 3 20 New PW-Mold2 0.28 0.35 10 2 0.35 0.45 4 2 13.5
2SK2399 100 5 20 New PW-Mold 0.17 0.23 10 2.5 0.22 0.3 4 2.5 22
2SK2400 100 5 1.2 TPS 0.17 0.23 10 2.5 0.22 0.3 4 2.5 22
2SK4019 100 5 20 New PW-Mold2 0.17 0.23 10 2.5 0.22 0.3 4 2.5 22
2SK2391 100 20 35 TO-220NIS 0.068 0.085 10 10 0.09 0.13 4 10 50
2SK2314 100 27 75 TO-220AB 0.066 0.085 10 15 0.09 0.13 4 15 50
2SK2789 100 27 60 TO-220FL/SM 0.066 0.085 10 15 0.09 0.13 4 15 50
2SK3387 150 18 100 TFP 0.08 0.12 10 9 0.09 0.18 4 9 57

■ π-MOSV Series (VDSS = 150 V to 250 V)

Absolute Maximum Ratings RDS(ON) Qg
Applications Part Number VDSS ID PD Package (Ω) VGS ID Typ.
(V) (A) (W) Typ. Max (V) (A) (nC)
2SJ618 –180 –10 130 TO-3P(N) – 0.37 –10 –5 18
2SJ407 –200 –5 30 TO-220NIS 0.8 1.0 –10 –2.5 20
2SJ567 –200 –2.5 20 New PW-Mold 1.6 2.0 –10 –1.5 10
2SJ676 –200 –2.5 1.3 TPS 1.6 2.0 –10 –1.5 10
2SJ680 –200 –2.5 20 New PW-Mold2 1.6 2.0 –10 –1.5 10
2SJ610 –250 –2 20 PW-Mold 1.85 2.55 –10 –1.0 24
2SJ512 –250 –5 30 TO-220NIS 1.0 1.25 –10 –2.5 22
2SJ516 –250 –6.5 35 TO-220NIS 0.6 0.8 –10 –3 29
2SK3670 150 0.67 0.9 LSTM 1.0 1.7 4 0.5 4.6
2SK3205 150 5 20 PW-Mold 0.36 0.5 10 2.5 12
2SK2882 150 18 45 TO-220NIS 0.08 0.12 10 9 57
2SK3497 180 10 130 TO-3P(N) — 0.15 10 5 —
2SK2992 200 1 1.5 PW-Mini 2.2 3.5 10 0.5 3
2SK2835 200 5 1.3 TPS 0.56 0.8 10 2.5 10
2SK2381 200 5 25 TO-220NIS 0.56 0.8 10 2.5 10
2SK2920 200 5 20 New PW-Mold 0.56 0.8 10 2.5 10
2SK4020 200 5 20 New PW-Mold2 0.52 0.8 10 2.5 10
2SK2350 200 8.5 30 TO-220NIS 0.26 0.4 10 5 17
DC-DC converters
2SK2965 200 11 35 TO-220NIS 0.15 0.26 10 5.5 30
Monitors
2SK2382 200 15 45 TO-220NIS 0.13 0.18 10 10 40
Motor controllers
2SK2401 200 15 75 TO-220FL/SM 0.13 0.18 10 10 40
2SK3625 200 25 100 TO-220FL/SM 0.065 0.082 10 12.5 44
2SK3444 200 25 125 TFP 0.067 0.082 10 12.5 44
2SK3176 250 30 150 TO-3P(N) 0.038 0.052 10 15 125
2SK3462 250 3 20 New PW-Mold 1.2 1.7 10 1.5 12
2SK4022 250 3 20 New PW-Mold2 1.2 1.7 10 1.5 12
2SK3342 250 4.5 20 New PW-Mold 0.8 1.0 10 2.5 10
2SK4021 250 4.5 20 New PW-Mold2 0.8 1.0 10 2.5 10
2SK2417 250 7.5 30 TO-220NIS 0.42 0.5 10 3.5 20
2SK2914 250 7.5 20 TO-220AB 0.42 0.5 10 3.5 20
2SK2508 250 13 45 TO-220NIS 0.18 0.25 10 6.5 40
2SK2598 250 13 60 TO-220FL/SM 0.18 0.25 10 6.5 40
2SK2993 250 20 100 TO-220FL/SM 0.082 0.105 10 10 100
2SK3994 250 20 45 TO-220NIS 0.090 0.105 10 10 45
2SK3388 250 20 125 TFP 0.082 0.105 10 10 100
2SK3445 250 20 125 TFP 0.09 0.105 10 10 45
2SK2967 250 30 150 TO-3P(N) 0.048 0.068 10 15 132
2SK2995 250 30 90 TO-3P(N)IS 0.048 0.068 10 15 132

44
■ π-MOSV Series (VDSS = 400 V to 700 V)
Absolute Maximum Ratings RDS(ON) Qg
Applications Part Number VDSS ID PD Package (Ω) Typ.
VGS ID
(V) (A) (W) Typ. Max (V) (A) (nC)
2SK3498 400 1 20 PW-Mold 4.2 5.5 10 0.5 5.7
2SK2838 400 5.5 40 TO-220FL/SM 0.84 1.2 10 3 17
2SK2679 400 5.5 35 TO-220NIS 0.84 1.2 10 3 17
2SK2952 400 8.5 40 TO-220NIS 0.4 0.55 10 5 34
2SK2841 400 10 80 TO-220AB 0.4 0.55 10 5 34
2SK2949 400 10 80 TO-220FL/SM 0.4 0.55 10 5 34
2SK3499 400 10 80 TFP 0.4 0.55 10 5 34
2SK3472 450 1 20 New PW-Mold 4.0 4.6 10 0.5 5
2SK3374 450 1 20 TPS 3.7 4.6 10 5 5
2SK4023 450 1 20 New PW-Mold2 4.0 4.6 10 0.5 5
2SK3544 450 13 100 TFP 0.29 0.4 10 6 34
2SK2998 500 0.5 0.9 LSTM 10 18 10 0.25 3.8
2SK3302 500 0.5 1.3 TPS 10 18 10 0.25 3.8
2SK3471 500 0.5 0.5 PW-Mini 10 18 10 0.25 3.8
2SK2599 500 2 1.3 TPS 2.9 3.2 10 1 9
2SK3373 500 2 20 New PW-Mold 2.9 3.2 10 1 9
2SK2862 500 3 25 TO-220NIS 2.9 3.2 10 1 9
2SK2991 500 5 50 TO-220FL/SM 1.35 1.5 10 2.5 17
2SK3466 500 5 50 TO-220FL/SM 1.35 1.5 10 2.5 17
2SK2542 500 8 80 TO-220AB 0.75 0.85 10 4 30
2SK2776 500 8 65 TO-220FL/SM 0.75 0.85 10 4 30
2SK3538 500 8 65 TFP 0.75 0.85 10 4 30
115-Vac
switching power supplies
2SK2601 500 10 125 TO-3P(N) 0.56 1.0 10 5 30
Ballast inverters
2SK3068 500 12 100 TO-220FL/SM 0.4 0.52 10 6 45
Motor controllers 2SK3398 500 12 100 TFP 0.4 0.52 10 6 45
2SK2916 500 14 80 TO-3P(N)IS 0.35 0.4 10 7 58
2SK2917 500 18 90 TO-3P(N)IS 0.21 0.27 10 10 80
2SK3132 500 50 250 TO-3P(L) 0.07 0.095 10 25 280
2SK3371 600 1 20 New PW-Mold 6.4 9.0 10 0.5 9
2SK4026 600 1 20 New PW-Mold2 6.4 9 10 0.5 9
2SK2846 600 2 1.3 TPS 4.2 5.0 10 1 9
2SK2865 600 2 20 New PW-Mold 4.2 5.0 10 1 9
2SK4002 600 2 20 New PW-Mold2 4.2 5 10 1 9
2SK4003 600 3 20 New PW-Mold2 1.7 2.2 10 1.5 20
2SK3975 600 3 20 New PW-Mold 1.7 2.2 10 1.5 20
2SK3085 600 3.5 75 TO-220AB 1.7 2.2 10 1.8 20
2SK3130 600 6 40 TO-220NIS 1.26 1.55 10 3 30
2SK2777 600 6 65 TO-220FL/SM 0.9 1.25 10 3 30
2SK2602 600 6 125 TO-3P(N) 0.9 1.25 10 3 30
2SK3312 600 6 65 TO-220FL/SM 0.95 1.25 10 3 22
2SK3438 600 10 80 TFP 0.78 1.0 10 5 28
2SK2889 600 10 100 TO-220FL/SM 0.54 0.75 10 5 45
2SK2866 600 10 125 TO-220AB 0.54 0.75 10 5 45
2SK2699 600 10 150 TO-3P(N) 0.5 0.65 10 6 58
2SK2953 600 12 90 TO-3P(N)IS 0.31 0.4 10 8 80
2SK3265 700 10 45 TO-220NIS 0.72 1.0 10 5 53
2SK3453 700 10 80 TO-3P(N)IS 0.72 1.0 10 5 53

■ π-MOSΙΙΙ Series (VDSS = 800 V to 1000 V)

Absolute Maximum Ratings RDS(ON) (Ω) Qg
Applications Package Typ.
VDSS (V) ID (A) PD (W) Typ. Max VGS(V) ID(A) (nC)
2SK2603 800 3 100 TO-220AB 3.0 3.6 10 1.5 25
2SK2883 800 3 75 TO-220FL/SM 3.0 3.6 10 15 25
2SK2884 800 5 100 TO-220FL/SM 1.9 2.2 10 3.0 34
2SK2746 800 7 150 TO-3P(N) 1.3 1.7 10 3.5 55
2SK2606 800 8 85 TO-3P(N)IS 1.0 1.2 10 4.0 68
2SK2607 800 9 150 TO-3P(N) 1.0 1.2 10 4.0 68
2SK3301 900 1 20 PW-Mold 15 20 10 0.5 6
2SK2845 900 1 40 DP 8.0 9.0 10 0.5 15
2SK2733 900 1 60 TO-220AB 8.0 9.0 10 0.5 15
2SK2608 900 3 100 TO-220AB 3.73 4.3 10 1.5 25
2SK2719 900 3 125 TO-3P(N) 3.7 4.3 10 1.5 25
2SK2847 900 8 85 TO-3P(N)IS 1.05 1.25 10 4.0 58
2SK3017 900 8.5 90 TO-3P(N)IS 1.2 1.4 10 4.0 70
2SK2968 900 10 150 TO-3P(N) 1.05 1.25 10 4 70
2SK2613 1000 8 150 TO-3P(N) 1.4 1.7 10 8.0 65

45
 7 MOSFET Part Numbers

7-1 Alphanumeric Index of Part Numbers

Main Characteristics Main Characteristics

Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
2SJ168 π-MOSIII S-MINI –60 –0.2 2 36 2SK2162 π-MOSII PW-Mold 180 1 5 –
2SJ200 π-MOSII TO-3P (N) –180 –10 0.83 – 2SK2173 L2-π-MOSV TO-3P (N) 60 50 0.017 44
2SJ201 π-MOSII TO-3P (L) –200 –12 0.63 – 2SK2200 L2-π-MOSV TPS 100 3 0.35 44
2SJ304 L2-π-MOSIV TO-220NIS –60 –14 0.12 – 2SK2201 L2-π-MOSV New PW-Mold 100 3 0.35 44
2SJ305 π-MOSIII S-MINI –30 –0.2 4 36 2SK2229 L2-π-MOSV TPS 60 5 0.16 44
2SJ312 L2-π-MOSIV TO-220FL/SM –60 –14 0.12 – 2SK2232 L2-π-MOSV TO-220NIS 60 25 0.046 44
2SJ313 π-MOSII TO-220NIS –180 –1 5 – 2SK2233 L2-π-MOSV TO-3P (N) 60 45 0.03 44
2SJ334 L2-π-MOSV TO-220NIS –60 –30 0.038 43 2SK2266 L2-π-MOSV TO-220FL/SM 60 45 0.03 44
2SJ338 π-MOSII PW-Mold –180 –1 5 – 2SK2267 L2-π-MOSV TO-3P (L) 60 60 0.011 44
2SJ343 π-MOSIII S-MINI –50 –0.05 50 36 2SK2274 π-MOSII.5 TO-220NIS 700 5 1.7 –
2SJ344 π-MOSIII USM –50 –0.05 50 36 2SK2311 L2-π-MOSV TO-220FL/SM 60 25 0.046 44
2SJ349 L2-π-MOSV TO-220NIS –60 –20 0.045 43 2SK2313 L2-π-MOSV TO-3P (N) 60 60 0.011 44
2SJ360 2
L -π-MOSV PW-Mini –60 –1 0.73 43 2SK2314 L2-π-MOSV TO-220AB 100 27 0.085 44
2SJ378 L2-π-MOSV TPS –60 –5 0.19 43 2SK2350 π-MOSV TO-220NIS 200 8.5 0.4 44
2SJ380 L2-π-MOSV TO-220NIS –100 –12 0.21 43 2SK2376 L2-π-MOSV TO-220FL/SM 60 45 0.017 44
2SJ401 L2-π-MOSV TO-220FL/SM –60 –20 0.045 43 2SK2381 π-MOSV TO-220NIS 200 5 0.8 44
2SJ402 L2-π-MOSV TO-220FL/SM –60 –30 0.038 43 2SK2382 π-MOSV TO-220NIS 200 15 0.18 44
2SJ407 π-MOSV TO-220NIS –200 –5 1 44 2SK2385 L2-π-MOSV TO-220NIS 60 36 0.03 44
2SJ412 L2-π-MOSV TO-220FL/SM –100 –16 0.21 43 2SK2391 L2-π-MOSV TO-220NIS 100 20 0.085 44
2SJ438 L2-π-MOSV TO-220NIS –60 –5 0.19 43 2SK2398 L2-π-MOSV TO-3P (N) 60 45 0.03 44
2SJ440 π-MOSII TO-3P (N)IS –180 –9 0.8 – 2SK2399 L2-π-MOSV New PW-Mold 100 5 0.23 44
2SJ464 L2-π-MOSV TO-220NIS –100 –18 0.09 43 2SK2400 L2-π-MOSV TPS 100 5 0.23 44
2SJ507 L2-π-MOSV LSTM –60 –1 0.7 43 2SK2401 π-MOSV TO-220FL/SM 200 15 0.18 44
2SJ508 L2-π-MOSV PW-Mini –100 –1 1.9 43 2SK2417 π-MOSV TO-220NIS 250 7.5 0.5 44
2SJ509 L2-π-MOSV LSTM –100 –1 1.9 43 2SK2445 L2-π-MOSV TO-3P (N) 60 50 0.018 44
2SJ512 π-MOSV TO-220NIS –250 –5 1.25 44 2SK2467 π-MOSII TO-3P (N)IS 180 9 0.8 –
2SJ516 π-MOSV TO-220NIS –250 –6.5 0.8 44 2SK2507 L2-π-MOSV TO-220NIS 50 25 0.046 43
2SJ537 L2-π-MOSV LSTM –50 –5 0.19 43 2SK2508 π-MOSV TO-220NIS 250 13 0.25 44
2SJ567 π-MOSV New PW-Mold –200 –2.5 2 44 2SK2542 π-MOSV TO-220AB 500 8 0.85 45
2SJ610 π-MOSV PW-Mold –250 –2 2.55 44 2SK2550 L2-π-MOSV TO-3P (N) 50 45 0.03 43
2SJ618 π-MOSV TO-3P (N) –180 –10 0.37 44 2SK2551 L2-π-MOSV TO-3P (N) 50 50 0.011 43
2SJ619 L2-π-MOSV TFP –100 –16 0.21 43 2SK2598 π-MOSV TO-220FL/SM 250 13 0.25 44
2SJ620 L2-π-MOSV TFP –100 –18 0.09 43 2SK2599 π-MOSV TPS 500 2 3.2 45
2SJ668 U-MOSIII New PW-Mold –60 –5 0.17 38 2SK2601 π-MOSV TO-3P (N) 500 10 1 45
2SJ669 U-MOSIII TPS –60 –5 0.17 38 2SK2602 π-MOSV TO-3P (N) 600 6 1.25 45
2SJ676 π-MOSV TPS –200 –2.5 2 44 2SK2603 π-MOSIII TO-220AB 800 3 3.6 45
2SJ680 π-MOSV New PW-Mold2 –200 –2.5 2 44 2SK2606 π-MOSIII TO-3P (N)IS 800 8 1.2 45
2SJ681 U-MOSIII New PW-Mold2 –60 –5 0.17 38 2SK2607 π-MOSIII TO-3P (N) 800 9 1.2 45
2SK1062 π-MOSIII S-MINI 60 0.2 1 36 2SK2608 π-MOSIII TO-220AB 900 3 4.3 45
2SK1119 π-MOSII.5 TO-220AB 1000 4 3.8 – 2SK2613 π-MOSIII TO-3P (N) 1000 8 1.7 45
2SK1359 π-MOSII.5 TO-3P (N) 100 5 3.8 – 2SK2614 L2-π-MOSV DP 50 20 0.046 43
2SK1365 π-MOSII.5 TO-3P (N)IS 1000 7 1.8 – 2SK2615 L2-π-MOSV PW-Mini 60 2 0.3 44
2SK1381 L2-π-MOSIII TO-3P (N) 100 50 0.032 – 2SK2679 π-MOSV TO-220NIS 400 5.5 1.2 45
2SK1382 L2-π-MOSIII TO-3P (L) 100 60 0.02 – 2SK2699 π-MOSV TO-3P (N) 600 12 0.65 45
2SK1486 π-MOSIII.5 TO-3P (L) 300 32 0.095 – 2SK2719 π-MOSIII TO-3P (N) 900 3 4.3 45
2SK1489 π-MOSIII.5 TO-3P (L) 1000 12 1 – 2SK2733 π-MOSIII TO-220AB 900 1 9 45
2SK1529 π-MOSII TO-3P (N) 180 10 0.83 – 2SK2744 L2-π-MOSV TO-3P (N) 50 45 0.02 43
2SK1530 π-MOSII TO-3P (N) 200 12 0.63 – 2SK2745 L2-π-MOSV TO-3P (N) 50 50 0.0095 43
2SK1544 π-MOSIII.5 TO-3P (L) 500 25 0.2 – 2SK2776 π-MOSV TO-220FL/SM 500 8 0.85 45
2SK1930 π-MOSII.5 TO-220FL/SM 1000 4 3.8 – 2SK2777 π-MOSV TO-220FL/SM 600 6 1.25 45
2SK2009 π-MOSIII S-MINI 30 0.2 2 36 2SK2782 L2-π-MOSV DP 60 20 0.055 44
2SK2013 π-MOSII TO-220NIS 180 1 5 – 2SK2789 L2-π-MOSV TO-220FL/SM 100 27 0.085 44

46
 Main Characteristics Main Characteristics
Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
2SK2835 π-MOSV TPS 200 5 0.8 44 2SK3388 π-MOSV TFP 250 20 0.105 44
2SK2838 π-MOSV TO-220FL/SM 400 5.5 1.2 45 2SK3398 π-MOSV TFP 500 12 0.52 45
2SK2841 π-MOSV TO-220AB 400 10 0.55 45 2SK3399 MACH TO-220FL/SM 600 10 0.75 42
2SK2845 π-MOSIII DP 900 1 9 45 2SK3403 MACH TO-220FL/SM 450 13 0.4 42
2SK2846 π-MOSV TPS 600 2 5 45 2SK3417 π-MOSV(HSD) TO-220FL/SM 500 5 1.8 42
2SK2847 π-MOSIII TO-3P (N)IS 900 8 1.4 45 2SK3437 MACH TO-220FL/SM 600 10 1 42
2SK2862 π-MOSV TO-220NIS 500 3 3.2 45 2SK3438 π-MOSV TFP 600 10 1 45
2SK2865 π-MOSV New PW-Mold 600 2 5 45 2SK3444 π-MOSV TFP 200 25 0.082 44
2SK2866 π-MOSV TO-220AB 600 10 0.75 42,45 2SK3445 π-MOSV TFP 250 20 0.105 44
2SK2882 π-MOSV TO-220NIS 150 18 0.12 44 2SK3453 π-MOSIV TO-3P (N)IS 700 10 1 45
2SK2883 π-MOSIII TO-220FL/SM 800 3 3.6 45 2SK3462 π-MOSV New PW-Mold 250 3 1.7 44
2SK2884 π-MOSIII TO-220FL/SM 800 5 2.2 45 2SK3466 π-MOSV TFP 500 5 1.5 45
2SK2886 L2-π-MOSV TO-220NIS 50 45 0.02 43 2SK3471 π-MOSV PW-Mini 500 0.5 18 45
2SK2889 π-MOSV TO-220FL/SM 600 10 0.75 45 2SK3472 π-MOSV PW-Mold 450 1 4.6 45
2SK2914 π-MOSV TO-220AB 250 7.5 0.5 44 2SK3473 π-MOSIV TO-3P (N) 900 9 1.6 43
2SK2916 π-MOSV TO-3P (N)IS 500 14 0.4 45 2SK3497 π-MOSV TO-3P (N) 180 10 0.15 44
2SK2917 π-MOSV TO-3P (N)IS 500 18 0.27 45 2SK3498 π-MOSV PW-Mold 400 1 5.5 45
2SK2920 π-MOSV New PW-Mold 200 5 0.8 44 2SK3499 π-MOSV TFP 400 10 0.55 45
2SK2949 π-MOSV TO-220FL/SM 400 10 0.55 45 2SK3506 π-MOSVI TO-3P (N) 30 45 0.02 43
2SK2952 π-MOSV TO-220NIS 400 8.5 0.55 45 2SK3538 π-MOSV TFP 500 8 0.85 45
2SK2953 π-MOSV TO-3P (N)IS 600 15 0.4 45 2SK3544 π-MOSV TFP 450 13 0.4 45
2SK2961 L2-π-MOSV LSTM 60 2 0.27 44 2SK3561 π-MOSVI TO-220SIS 500 8 0.85 40,42,43
2SK2962 L2-π-MOSV LSTM 100 1 0.7 44 2SK3562 π-MOSVI TO-220SIS 600 6 1.25 40,42,43
2SK2963 L2-π-MOSV PW-Mini 100 1 0.7 44 2SK3563 π-MOSVI TO-220SIS 500 5 1.5 40,42,43
2SK2965 π-MOSV TO-220NIS 200 11 0.26 44 2SK3564 π-MOSIV TO-220SIS 900 3 4.3 43
2SK2967 π-MOSV TO-3P (N) 250 30 0.068 44 2SK3565 π-MOSIV TO-220SIS 900 5 2.5 43
2SK2968 π-MOSIII TO-3P (N) 900 10 1.25 45 2SK3566 π-MOSIV TO-220SIS 900 2.5 6.4 43
2SK2989 L2-π-MOSV LSTM 50 5 0.15 43 2SK3567 π-MOSVI TO-220SIS 600 3.5 2.2 40,43
2SK2991 π-MOSV TO-220FL/SM 500 5 1.5 42,45 2SK3568 π-MOSVI TO-220SIS 500 12 0.52 40,43
2SK2992 π-MOSV PW-Mini 200 1 3.5 44 2SK3569 π-MOSVI TO-220SIS 600 10 0.75 40,42,43
2SK2993 π-MOSV TO-220FL/SM 250 20 0.105 44 2SK3625 π-MOSV TO-220FL/SM 200 25 0.082 44
2SK2995 π-MOSV TO-3P (N)IS 250 30 0.068 44 2SK3633 π-MOSIV TO-3P (N) 800 7 1.7 43
2SK2998 π-MOSV LSTM 500 0.5 18 45 2SK3662 U-MOSIII TO-220NIS 60 35 0.0125 38
2SK3017 π-MOSIII TO-3P (N)IS 900 8.5 1.25 45 2SK3667 π-MOSVI TO-220SIS 600 7.5 1 40,43
2SK3051 L2-π-MOSV TO-220FL/SM 50 45 0.03 43 2SK3669 π-MOSVII New PW-Mold 100 10 0.125 –
2SK3068 π-MOSV TO-220FL/SM 500 12 0.52 45 2SK3670 π-MOSV LSTM 150 0.67 1.7 44
2SK3085 π-MOSV TO-220AB 600 3.5 2.2 45 2SK3700 π-MOSIV TO-3P (N) 900 5 2.5 43
2SK3130 π-MOSV TO-220NIS 600 6 1.55 45 2SK3742 π-MOSIV TO-220SIS 900 5 2.5 43
2SK3131 π-MOSV(HSD) TO-3P (L) 500 50 0.11 42 2SK3743 MACH TO-220NIS 450 13 0.6 40,42
2SK3132 π-MOSV TO-3P (L) 500 50 0.095 42,45 2SK3754 U-MOSIII TO-220NIS 30 5 0.089 38
2SK3176 π-MOSV TO-3P (N) 200 30 0.052 44 2SK3757 π-MOSVI TO-220SIS 450 2 2.45 43
2SK3205 π-MOSV PW-Mold 150 5 0.5 44 2SK3766 π-MOSVI TO-220SIS 450 2 2.45 43
2SK3265 π-MOSV TO-220NIS 700 10 1 45 2SK3767 π-MOSVI TO-220SIS 600 2 4.5 43
2SK3301 π-MOSIII PW-Mold 900 1 20 45 2SK3797 π-MOSVI TO-220SIS 600 13 0.43 40,42,43
2SK3302 π-MOSV TPS 500 0.5 18 45 2SK3798 π-MOSIV TO-220SIS 900 4 3.5 43
2SK3309 MACH TO-220FL/SM 450 10 0.65 42 2SK3799 π-MOSIV TO-220SIS 900 8 1.3 43
2SK3310 MACH TO-220NIS 450 10 0.65 42 2SK3842 U-MOSIII TFP 60 75 0.0058 38
2SK3312 π-MOSV TO-220FL/SM 600 6 1.25 42,45 2SK3843 U-MOSIII TFP 40 75 0.0035 38
2SK3313 π-MOSV(HSD) TO-220NIS 500 12 0.62 42 2SK3844 U-MOSIII TO-220NIS 60 45 0.0058 38
2SK3314 π-MOSV(HSD) TO-3P (N) 500 15 0.49 42 2SK3845 U-MOSIII TO-3P (N) 60 70 0.0058 38
2SK3342 π-MOSV New PW-Mold 250 4.5 1 44 2SK3846 U-MOSIII TO-220NIS 40 26 0.018 38
2SK3371 π-MOSV New PW-Mold 600 1 9 45 2SK3847 U-MOSIII TO-220SM 40 32 0.016 38
2SK3373 π-MOSV New PW-Mold 500 2 3.2 45 2SK3863 π-MOSVI DP 500 5 1.5 43
2SK3374 π-MOSV TPS 450 1 4.6 45 2SK3868 π-MOSVI (HSD) TO-220SIS 500 5 1.7 42
2SK3387 L2-π-MOSV TFP 150 18 0.12 44 2SK3869 π-MOSVI TO-220SIS 450 10 0.68 43

47
 7 MOSFET Part Numbers

Main Characteristics Main Characteristics

Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
2SK3878 π-MOSIV TO-3P (N) 900 9 1.3 43 SSM3J129TU U-MOSV UFM –20 –4.6 0.046 28
2SK3879 π-MOSIV TO-220FL/SM 800 6.5 1.7 43 SSM3J130TU U-MOSVI UFM –20 –4.4 0.0258 28
2SK3880 π-MOSIV TO-3P (N)IS 800 6.5 1.7 43 SSM3J132TU U-MOSVI UFM –12 –5 0.0178 28
2SK3903 π-MOSVI TO-3P (N) 600 14 0.44 43 SSM3J13T U-MOSIII TSM –12 –3 0.07 28
2SK3904 π-MOSVI TO-3P (N) 450 19 0.26 43 SSM3J14T U-MOSII TSM –30 –2.7 0.17 28
2SK3905 π-MOSVI TO-3P (N) 500 17 0.31 43 SSM3J15CT π-MOSVI CST3 –30 –0.1 32 36
2SK3906 MACH (HSD) TO-3P (N) 600 20 0.33 42 SSM3J15F π-MOSVI S-MINI –30 –0.1 32 36
2SK3907 MACH TO-3P (N) 500 23 0.23 42 SSM3J15FS π-MOSVI SSM –30 –0.1 32 36
2SK3911 MACH TO-3P (N) 600 20 0.32 41,42 SSM3J15FU πMOSVI USM –30 –0.1 32 36
2SK3934 π-MOSVI TO-220SIS 500 15 0.3 40,43 SSM3J15FV π-MOSVI VESM –30 –0.1 32 36
2SK3935 π-MOSVI TO-220SIS 450 17 0.25 43 SSM3J16CT π-MOSVI CST3 –20 –0.1 45 36
2SK3936 MACH (HSD) TO-3P (N) 500 23 0.25 42 SSM3J16FS π-MOSVI SSM –20 –0.1 45 36
2SK3947 π-MOSVI (HSD) TO-220SIS 600 6 1.4 42 SSM3J16FU π-MOSVI USM –20 –0.1 45 36
2SK3975 π-MOSV New PW-Mold 600 3 2.2 45 SSM3J16FV π-MOSVI VESM –20 –0.1 45 48
2SK3994 π-MOSV TO-220NIS 250 20 0.105 44 SSM3J304T U-MOSIII TSM –20 –2.3 0.127 28
2SK4002 π-MOSV New PW-Mold2 600 2 5 40,45 SSM3J305T U-MOSII TSM –30 –1.7 0.477 28
2SK4003 π-MOSV New PW-Mold2 600 3 2.2 45 SSM3J306T U-MOSII TSM –30 –2.4 0.225 28
2SK4012 π-MOSVI TO-220SIS 500 13 0.4 40,43 SSM3J307T U-MOSV TSM –20 –5.0 0.031 28
2SK4013 π-MOSIV TO-220SIS 800 6 1.7 43 SSM3J312T U-MOSIII TSM –12 –2.7 0.091 28
2SK4014 π-MOSIV TO-220SIS 900 6 2 43 SSM3J313T U-MOSIII TSM –20 –1.6 0.268 28
2SK4015 π-MOSVI (HSD) TO-220SIS 600 10 0.86 42 SSM3J314T U-MOSIII-H TSM –30 –3.5 0.1 28
2SK4016 π-MOSVI (HSD) TO-220SIS 600 13 0.5 42 SSM3J317T U-MOSIII TSM –20 –3.6 0.107 28
2SK4017 U-MOSIII New PW-Mold2 60 5 0.1 38 SSM3J321T U-MOSV TSM –20 –5.2 0.046 28
2SK4018 L2-π-MOSV New PW-Mold2 100 3 0.35 44 SSM3J325F U-MOSVI S-MINI –20 –2.0 0.155 28
2SK4019 L2-π-MOSV New PW-Mold2 100 5 0.23 44 SSM3J326T U-MOSVI TSM –30 –5.6 0.0457 28
2SK4020 π-MOSV New PW-Mold2 200 5 0.8 44 SSM3J327F U-MOSVI S-MINI –20 –3.5 0.095 28
2SK4021 π-MOSV New PW-Mold2 250 4.5 1 44 SSM3J35CT π-MOSVI CST3 –20 –0.1 44 36
2SK4022 π-MOSV New PW-Mold2 250 3 1.7 44 SSM3J35FS π-MOSVI SSM –20 –0.1 44 36
2SK4023 π-MOSV New PW-Mold2 450 1 4.6 45 SSM3J35MFV π-MOSVI VESM –20 –0.1 44 36
2SK4026 π-MOSV New PW-Mold2 600 1 9 45 SSM3J36FS U-MOSIII SSM –20 –0.33 3.6 36
2SK4033 U-MOSIII New PW-Mold 60 5 0.1 38 SSM3J36MFV U-MOSIII VESM –20 –0.33 3.6 36
2SK4034 U-MOSIII TFP 60 75 0.0058 38 SSM3J36TU U-MOSIII UFM –20 –0.33 3.6 36
2SK4042 π-MOSVI (HSD) TO-220SIS 500 8 0.97 42 SSM3J46CTB U-MOSVI CST3B –20 –2 0.103 28
2SK4103 π-MOSVI New PW-Mold 500 5 1.5 43 SSM3K01T π-MOSVI TSM 30 3.2 0.12 29
2SK4107 π-MOSVI TO-3P (N) 500 15 0.4 40,43 SSM3K02T π-MOSVI TSM 30 2.5 0.2 29
2SK4108 π-MOSVI TO-3P (N) 500 20 0.27 40,43 SSM3K03FV π-MOSVI VESM 20 0.1 12 36
2SK4115 π-MOSIV TO-3P (N) 900 7 2 43 SSM3K04FS π-MOSVI SSM 20 0.1 12 36
2SK4207 π-MOSIV TO-3P (N) 900 13 0.95 43 SSM3K04FU π-MOSVI USM 20 0.1 12 36
S3U72 U-MOSV-H SOP Advance 30 TBD TBD 35 SSM3K04FV π-MOSVI VESM 20 0.1 12 36
S3W16 U-MOSIV-H SOP Advance 30 (40) (0.0035) – SSM3K05FU π-MOSVI USM 20 0.4 1.2 36
SSM3J01T π-MOSVI TSM –30 –1.7 0.4 28 SSM3K09FU π-MOSVI USM 30 0.4 1.2 36
SSM3J02T π-MOSVI TSM –30 –1.5 0.5 28 SSM3K101TU U-MOSIII UFM 20 2.2 0.103 29
SSM3J05FU π-MOSVI USM –20 –0.2 4 36 SSM3K102TU U-MOSIII UFM 20 2.6 0.071 29
SSM3J09FU π-MOSVI USM –30 –0.2 4.2 36 SSM3K104TU U-MOSIII UFM 20 3 0.056 29
SSM3J108TU U-MOSIII UFM –20 –1.8 0.158 28 SSM3K105TU π-MOSVI UFM 30 2.1 0.2 29
SSM3J109TU U-MOSII UFM –20 –2 0.13 28 SSM3K106TU π-MOSVII UFM 20 1.2 0.53 29
SSM3J110TU U-MOSIII UFM –12 –2.3 0.094 28 SSM3K107TU π-MOSVI UFM 20 1.5 0.41 29
SSM3J111TU U-MOSIII UFM –20 –1 0.48 28 SSM3K116TU U-MOSIII UFM 30 2.2 0.1 29
SSM3J112TU U-MOSII UFM –30 –1.1 0.79 28 SSM3K119TU U-MOSIII UFM 30 2.5 0.074 29
SSM3J113TU U-MOSIII UFM –20 –1.7 0.169 28 SSM3K121TU U-MOSIII UFM 20 3.2 0.048 29
SSM3J114TU U-MOSIV UFM –20 –1.8 0.149 28 SSM3K122TU U-MOSIII UFM 20 2 0.123 29
SSM3J115TU U-MOSIV UFM –20 –2.2 0.098 28 SSM3K123TU U-MOSIII UFM 20 4.2 0.028 29
SSM3J117TU U-MOSII UFM –30 –2 0.225 28 SSM3K124TU π-MOSVII UFM 30 2.4 0.12 29
SSM3J118TU U-MOSII UFM –30 –1.4 0.48 28 SSM3K127TU U-MOSIII UFM 30 2 0.123 29
SSM3J120TU U-MOSIV UFM –20 –4 0.038 28 SSM3K128TU U-MOSIII UFM 30 1.5 0.36 29

48
 Main Characteristics Main Characteristics
Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
SSM3K12T π-MOSVII TSM 30 3 0.175 29 SSM5N15FE π-MOSVI ES6 30 0.1 7 36
SSM3K131TU U-MOSIV UFM 30 6.0 0.0415 29 SSM5N15FU π-MOSVI US6 30 0.1 7 36
SSM3K14T U-MOSII TSM 30 4 0.067 29 SSM5N16FE π-MOSVI ES6 20 0.1 15 36
SSM3K15CT π-MOSVI CST3 30 0.1 7 36 SSM5N16FU π-MOSVI US6 20 0.1 15 36
SSM3K15F π-MOSVI S-MINI 30 0.1 7 36 SSM5P05FU π-MOSVI US6 –20 –0.2 4 36
SSM3K15FS π-MOSVI SSM 30 0.1 7 36 SSM5P15FE π-MOSVI ES6 –30 –0.1 32 36
SSM3K15FU π-MOSVI USM 30 0.1 7 36 SSM5P15FU π-MOSVI US6 –30 –0.1 32 36
SSM3K15FV π-MOSVI VESM 30 0.1 7 36 SSM5P16FE π-MOSVI ES6 –20 –0.1 45 36
SSM3K16CT π-MOSVI CST3 20 0.1 15 36 SSM5P16FU π-MOSVI US6 –20 –0.1 45 36
SSM3K16FS π-MOSVI SSM 20 0.1 15 36 SSM6E01TU U-MOSIII UF6 –12 –1 0.16 30
SSM3K16FU π-MOSVI USM 20 0.1 15 36 SSM6E02TU U-MOSIV UF6 –20 –1.8 0.136 30
SSM3K16FV π-MOSVI VESM 20 0.1 15 36 SSM6E03TU U-MOSIII UF6 –20 –1.8 0.144 30
SSM3K17FU π-MOSV USM 50 0.1 40 36 SSM6J06FU π-MOSVI US6 –20 –0.65 0.5 28
SSM3K301T U-MOSIII TSM 20 3.5 0.056 29 SSM6J07FU π-MOSVI US6 –30 –0.8 0.8 28
SSM3K303T π-MOSVII TSM 30 2.9 0.12 29 SSM6J08FU U-MOSII US6 –20 –1.3 0.18 28
SSM3K309T U-MOSIII TSM 20 4.7 0.031 29 SSM6J205FE U-MOSIII ES6 –20 –0.8 0.234 28
SSM3K310T U-MOSIII TSM 20 5 0.028 29 SSM6J206FE U-MOSIII ES6 –20 –2 0.13 28
SSM3K315T U-MOSIV TSM 30 6 0.0415 29 SSM6J207FE U-MOSII ES6 –30 –1.3 0.491 28
SSM3K316T U-MOSIII TSM 30 4 0.065 29 SSM6J21TU U-MOSIII UF6 –12 –3 0.05 28
SSM3K318T U-MOSIV TSM 60 2.5 0.145 29 SSM6J212FE U-MOSVI ES6 –20 –3.3 0.0434 28
SSM3K320T U-MOSIV TSM 30 4.2 0.077 29 SSM6J23FE U-MOSIII ES6 –12 –1.2 0.16 28
SSM3K35CT π-MOSVI CST3 20 0.18 20 36 SSM6J25FE U-MOSIII ES6 –20 –0.5 0.26 28
SSM3K35FS π-MOSVI SSM 20 0.18 20 36 SSM6J26FE U-MOSIII ES6 –20 –0.5 0.23 28
SSM3K35MFV π-MOSVI VESM 20 0.18 20 36 SSM6J401TU U-MOSIII UF6 –30 –2.5 0.145 28
SSM3K36FS U-MOSIII SSM 20 0.5 1.52 36 SSM6J402TU U-MOSIII UF6 –30 –2 0.225 28
SSM3K36MFV U-MOSIII VESM 20 0.5 1.52 36 SSM6J409TU U-MOSV UF6 –20 –9.5 0.0221 28
SSM3K36TU U-MOSIII UFM 20 0.5 1.52 36 SSM6J50TU U-MOSIV UF6 –20 –2.5 0.064 28
SSM3K43FS U-MOSIII SSM 20 0.5 1.52 36 SSM6J51TU U-MOSIV UF6 –12 –4 0.054 28
SSM3K44FS π-MOSVI SSM 30 0.1 7 36 SSM6J53FE U-MOSIV ES6 –20 –1.8 0.136 28
SSM3K44MFV π-MOSVI VESM 30 0.1 7 36 SSM6K06FU π-MOSVI US6 20 1.1 0.16 29
SSM3K7002AF π-MOSV S-MINI 60 0.2 3.3 36 SSM6K07FU π-MOSVI US6 30 1.5 0.22 29
SSM3K7002AFU π-MOSV USM 60 0.2 3.3 36 SSM6K08FU U-MOSII US6 20 1.6 0.105 29
SSM3K7002BF U-MOSIV S-MINI 60 0.2 3.3 36 SSM6K18TU U-MOSIII UF6 20 4 0.04 29
SSM3K7002BFS U-MOSIV SSM 60 0.2 3.3 36 SSM6K202FE U-MOSIII ES6 30 2.3 0.085 29
SSM3K7002BFU U-MOSIV USM 60 0.2 3.3 36 SSM6K203FE U-MOSIII ES6 20 2.8 0.061 29
SSM3K7002F π-MOSVI S-MINI 60 0.2 3.3 36 SSM6K204FE U-MOSIII ES6 20 2 0.126 29
SSM3K7002FU π-MOSVI USM 60 0.2 3.3 36 SSM6K208FE U-MOSIII ES6 30 1.9 0.133 29
SSM4K27CT U-MOSIII CST4 20 0.5 0.205 29 SSM6K210FE U-MOSIII ES6 30 1.4 0.371 29
SSM5G01TU U-MOSII UFV –30 –1 0.8 30 SSM6K211FE U-MOSIII ES6 20 3.2 0.047 29
SSM5G02TU U-MOSII UFV –12 –1 0.16 30 SSM6K22FE U-MOSIII ES6 20 1.4 0.17 29
SSM5G04TU U-MOSII UFV –12 –1 0.24 30 SSM6K24FE U-MOSIII ES6 30 0.5 0.145 29
SSM5G09TU U-MOSII UFV –12 –1.5 0.13 30 SSM6K25FE U-MOSIII ES6 20 0.5 0.145 29
SSM5G10TU U-MOSIII UFV –20 –1.5 0.213 30 SSM6K30FE π-MOSVII ES6 20 1.2 0.42 29
SSM5G11TU U-MOSIII-H UFV –30 –1.4 0.403 30 SSM6K31FE π-MOSVII ES6 20 1.2 0.54 29
SSM5H01TU U-MOSII UFV 30 1.4 0.45 30 SSM6K32TU π-MOSV UF6 60 2 0.44 29
SSM5H03TU U-MOSII UFV 12 1.4 0.3 30 SSM6K34TU U-MOSIII UF6 30 3 0.077 29
SSM5H05TU U-MOSIII UFV 20 1.5 0.16 30 SSM6K403TU U-MOSIII UF6 20 4.2 0.028 29
SSM5H07TU π-MOSVII UFV 20 1.2 0.54 30 SSM6K404TU U-MOSIII UF6 20 3 0.055 29
SSM5H08TU U-MOSIII UFV 20 1.5 0.16 30 SSM6K405TU U-MOSIII UF6 20 2 0.126 29
SSM5H10TU U-MOSIII UFV 20 1.6 0.119 30 SSM6K406TU U-MOSIV UF6 30 4.4 0.0385 29
SSM5H11TU U-MOSIII UFV 30 1.6 0.182 30 SSM6K407TU π-MOSV UF6 60 2 0.44 29
SSM5H12TU U-MOSIII UFV 30 1.9 0.133 30 SSM6L05FU π-MOSVI US6 20 0.4 1.2 36
SSM5H14F U-MOSIII SMV 30 3 0.078 31 SSM6L09FU π-MOSVI US6 30 0.4 1.2 36
SSM5N03FE π-MOSVI ES6 20 0.1 12 36 SSM6L10TU U-MOSIII UF6 20 0.5 0.145 30
SSM5N05FU π-MOSVI US6 20 0.4 1.2 36 SSM6L11TU U-MOSIII UF6 20 0.5 0.145 30

49
 7 MOSFET Part Numbers

Main Characteristics Main Characteristics

Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
SSM6L12TU U-MOSIII UF6 30 0.5 0.145 30 TK100F04K3 U-MOSIV TO-220SM(W) 40 100 0.003 37,38
SSM6L13TU U-MOSIII UF6 20 0.8 0.143 30 TK100F04K3L U-MOSIV TO-220SM(W) 40 100 0.003 37,38
SSM6L16FE π-MOSVI ES6 20 0.1 15 36 TK100F06K3 U-MOSIV TO-220SM(W) 60 100 0.005 37,38
SSM6L35FE π-MOSVI ES6 20 0.18 20 36 TK10A50D π-MOSVII TO-220SIS 500 10 0.72 40
SSM6L35FU π-MOSVI US6 20 0.18 20 36 TK10A60D π-MOSVII TO-220SIS 600 10 0.75 40
SSM6L36FE U-MOSIII ES6 20 0.5 1.52 36 TK11A50D π-MOSVII TO-220SIS 500 11 0.6 40
SSM6L36TU U-MOSIII UF6 20 0.5 1.52 36 TK11A55D π-MOSVII TO-220SIS 550 11 0.63 40
SSM6L39TU U-MOSIII UF6 20 1.6 0.119 30 TK11A60D π-MOSVII TO-220SIS 600 11 0.65 40
SSM6L40TU U-MOSIII UF6 30 1.6 0.182 30 TK12A50D π-MOSVII TO-220SIS 500 12 0.52 40
SSM6N03FE π-MOSVI ES6 20 0.1 12 36 TK12A53D π-MOSVII TO-220SIS 525 12 0.58 40
SSM6N04FU π-MOSVI US6 20 0.1 12 36 TK12A55D π-MOSVII TO-220SIS 550 12 0.57 40
SSM6N05FU π-MOSVI US6 20 0.4 1.2 36 TK12A60D π-MOSVII TO-220SIS 600 12 0.55 40
SSM6N09FU π-MOSVI US6 30 0.4 1.2 36 TK12A60U DTMOSII TO-220SIS 600 12 0.4 41
SSM6N15FE π-MOSVI ES6 30 0.1 7 36 TK12D60U DTMOSII TO-220(W) 600 12 0.4 41
SSM6N15FU π-MOSVI US6 30 0.1 7 36 TK12J55D π-MOSVII TO-3P(N) 550 12 0.57 40
SSM6N16FE π-MOSVI ES6 20 0.1 15 36 TK12J60U DTMOSII TO-3P(N) 600 12 0.4 41
SSM6N16FU π-MOSVI US6 20 0.1 15 36 TK12X53D π-MOSVII TFP 550 12 0.58 40
SSM6N17FU π-MOSV US6 50 0.1 40 36 TK130F06K3 U-MOSIV TO-220SM(W) 60 130 0.0034 37
SSM6N24TU U-MOSIII UF6 30 0.5 0.145 30 TK13A45D π-MOSVII TO-220SIS 450 13 0.46 40
SSM6N25TU U-MOSIII UF6 20 0.5 0.145 30 TK13A50D π-MOSVII TO-220SIS 500 13 0.4 40
SSM6N29TU U-MOSIII UF6 20 0.8 0.143 30 TK13A50DA π-MOSVII TO-220SIS 500 12.5 0.47 40
SSM6N35FE π-MOSVI ES6 20 0.18 20 36 TK13A55DA π-MOSVII TO-220SIS 550 12.5 0.48 40
SSM6N35FU π-MOSVI US6 20 0.18 20 36 TK13A60D π-MOSVII TO-220SIS 600 13 0.43 40
SSM6N36FE U-MOSIII ES6 20 0.5 1.52 36 TK13A65U DTMOSII TO-220SIS 650 13 0.38 41
SSM6N36TU U-MOSIII UF6 20 0.5 1.52 36 TK14A55D π-MOSVII TO-220SIS 550 14 0.37 40
SSM6N37CTD U-MOSIII CST6D 20 0.25 5.6 36 TK150F04K3 U-MOSIV TO-220SM(W) 40 150 0.0021 37
SSM6N39TU U-MOSIII UF6 20 1.6 0.119 30 TK150F04K3L U-MOSIV TO-220SM(W) 40 150 0.0021 37
SSM6N40TU U-MOSIII UF6 30 1.6 0.182 30 TK15A50D π-MOSVII TO-220SIS 500 15 0.3 40
SSM6N42FE U-MOSIII ES6 20 0.77 0.26 30 TK15A60D π-MOSVII TO-220SIS 600 15 0.37 40
SSM6N43FU U-MOSIII US6 20 0.5 1.52 36 TK15A60U DTMOSII TO-220SIS 600 15 0.3 41
SSM6N44FE π-MOSVI ES6 30 0.1 7 36 TK15D60U DTMOSII TO-220(W) 600 15 0.3 41
SSM6N44FU π-MOSVI US6 30 0.1 7 36 TK15J50D π-MOSVII TO-3P(N) 500 15 0.4 40
SSM6N7002AFU π-MOSV US6 60 0.2 3.3 36 TK15J60T DTMOSI TO-3P(N) 600 15 0.28 41
SSM6N7002BFE U-MOSIV ES6 60 0.2 3.3 36 TK15J60U DTMOSII TO-3P(N) 600 15 0.3 41
SSM6N7002BFU U-MOSIV US6 60 0.2 3.3 36 TK16J55D π-MOSVII TO-3P(N) 550 16 0.37 40
SSM6N7002FU π-MOSVI US6 60 0.2 3.3 36 TK18A50D π-MOSVII TO-220SIS 500 18 0.27 40
SSM6P05FU π-MOSVI US6 –20 –0.2 4 36 TK20A60T DTMOSI TO-220SIS 600 20 0.19 41
SSM6P09FU π-MOSVI US6 –30 –0.2 4.2 36 TK20A60U DTMOSII TO-220SIS 600 20 0.19 41
SSM6P15FE π-MOSVI ES6 –30 –0.1 32 36 TK20D60T DTMOSI TO-220(W) 600 20 0.19 41
SSM6P15FU π-MOSVI US6 –30 –0.1 32 36 TK20D60U DTMOSII TO-220(W) 600 20 0.19 41
SSM6P16FE π-MOSVI ES6 –20 –0.1 45 36 TK20J50D π-MOSVII TO-3P(N) 500 20 0.27 40
SSM6P16FU π-MOSVI US6 –20 –0.1 45 36 TK20J60T DTMOSI TO-3P(N) 600 20 0.19 41
SSM6P25TU U-MOSIII UF6 –20 –0.5 0.26 30 TK20J60U DTMOSII TO-3P(N) 600 20 0.19 41
SSM6P26TU U-MOSIII UF6 –20 –0.5 0.23 30 TK25A10K3 U-MOSIV TO-220SIS 100 25 0.04 38
SSM6P28TU U-MOSIII UF6 –20 –0.8 0.234 30 TK2Q60D π-MOSVII NewPW-Mold2 600 2 5 40
SSM6P35FE π-MOSVI ES6 –20 –0.1 44 36 TK30A06J3A U-MOSIII TO-220SIS 60 30 0.026 38
SSM6P35FU π-MOSVI US6 –20 –0.1 44 36 TK3A60DA π-MOSVII TO-220SIS 600 2.5 2.8 40
SSM6P36FE U-MOSIII ES6 –20 –0.33 3.6 36 TK40A08K3 U-MOSIV TO-220SIS 75 40 0.009 39
SSM6P36TU U-MOSIII UF6 –20 –0.33 3.6 36 TK40A10J1 U-MOSIII-H TO-220SIS 100 40 0.015 39
SSM6P39TU U-MOSIII UF6 –20 –1.5 0.213 30 TK40A10K3 U-MOSIV TO-220SIS 100 40 0.015 39
SSM6P40TU U-MOSIII UF6 –30 –1.4 0.403 30 TK40D10J1 U-MOSIII-H TO-220(W) 100 40 0.015 39
SSM6P41FE U-MOSV ES6 –20 –0.72 0.3 30 TK40J60T DTMOSI TO-3P(N) 600 40 0.08 41
SSM6P54TU U-MOSIV UF6 –20 –1.2 0.228 30 TK40P03M1 U-MOSVI-H DPAK 30 40 0.0108 35
TJ20A10M3 U-MOSVI TO-220SIS –100 –20 0.09 38 TK40P04M1 U-MOSVI-H DPAK 40 40 0.0103 35
TJ70A06J3 U-MOSIII TO-220SIS –60 –70 0.008 38 TK40X10J1 U-MOSIII-H TFP 100 40 0.02 38,39
TJ120F06J3 U-MOSIII TO-220SM(W) –60 –120 0.008 37,38 TK4A50D π-MOSVII TO-220SIS 500 4 2 40

50
 Main Characteristics Main Characteristics
Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
TK4A53D π-MOSVII TO-220SIS 525 4 1.7 40 TPC8018-H U-MOSIII-H SOP-8 30 18 0.0046 –
TK4A55D π-MOSVII TO-220SIS 550 4 1.9 40 TPC8020-H U-MOSIII-H SOP-8 30 13 0.009 –
TK4A55DA π-MOSVII TO-220SIS 550 3.5 2.45 40 TPC8021-H U-MOSIII-H SOP-8 30 11 0.017 24,33
TK4A60D π-MOSVII TO-220SIS 600 4 1.7 40 TPC8022-H U-MOSIII-H SOP-8 40 7.5 0.027 24,34
TK4A60DA π-MOSVII TO-220SIS 600 3.5 2.2 40 TPC8025 U-MOSIV SOP-8 30 11 0.009 27,33
TK4A60DB π-MOSVII TO-220SIS 600 3.7 2 40 TPC8026 U-MOSIV SOP-8 30 13 0.0066 27,33
TK50F15J1 U-MOSIII TO-220SM(W) 150 50 0.03 37,38 TPC8027 U-MOSIV SOP-8 30 18 0.0027 27,34
TK50P03M1 U-MOSVI-H DPAK 30 50 0.0075 35 TPC8028 U-MOSIV SOP-8 30 18 0.0043 27,34
TK50P04M1 U-MOSVI-H DPAK 40 50 0.0087 35 TPC8029 U-MOSIV SOP-8 30 18 0.0038 27,34
TK50X15J1 U-MOSIII-H TFP 150 50 0.03 39 TPC8030 U-MOSIV SOP-8 30 11 0.0095 27,33
TK55A10J1 U-MOSIII-H TO-220SIS 100 55 0.0105 39 TPC8031-H U-MOSV-H SOP-8 30 11 0.0133 24
TK55D10J1 U-MOSIII-H TO-220(W) 100 55 0.0105 39 TPC8032-H U-MOSV-H SOP-8 30 15 0.0065 24,33
TK5A50D π-MOSVII TO-220SIS 500 5 1.5 40 TPC8033-H U-MOSV-H SOP-8 30 17 0.0053 24,33
TK5A53D π-MOSVII TO-220SIS 525 5 1.5 40 TPC8034-H U-MOSV-H SOP-8 30 18 0.0035 24,34
TK5A55D π-MOSVII TO-220SIS 550 5 1.88 40 TPC8035-H U-MOSVI-H SOP-8 30 18 0.0032 24,34
TK5A65D π-MOSVII TO-220SIS 650 5 1.45 40 TPC8036-H U-MOSVI-H SOP-8 30 18 0.0045 24,34
TK60A08J1 U-MOSIII-H TO-220SIS 75 60 0.0078 39 TPC8037-H U-MOSV-H SOP-8 30 12 0.0114 24,33
TK60D08J1 U-MOSIII-H TO-220(W) 75 60 0.0078 39 TPC8038-H U-MOSV-H SOP-8 30 12 0.0114 24,33
TK6A50D π-MOSVII TO-220(W) 500 6 1.4 40 TPC8039-H U-MOSVI-H SOP-8 30 17 0.006 24,33
TK6A53D π-MOSVII TO-220SIS 525 6 1.3 40 TPC8040-H U-MOSVI-H SOP-8 30 13 0.0097 24,33
TK6A55DA π-MOSVII TO-220SIS 550 5.5 1.48 40 TPC8045-H U-MOSVI-H SOP-8 40 18 0.0039 24,34
TK6A60D π-MOSVII TO-220SIS 600 6 1.25 40 TPC8046-H U-MOSVI-H SOP-8 40 18 0.0057 24,34
TK6A65D π-MOSVII TO-220SIS 650 6 1.11 40 TPC8047-H U-MOSVI-H SOP-8 40 16 0.0076 24,34
TK6P53D π-MOSVII DPAK 525 6 1.3 40 TPC8048-H U-MOSVI-H SOP-8 60 16 0.0069 25,34
TK70A06J1 U-MOSIII-H TO-220SIS 60 70 0.0064 39 TPC8049-H U-MOSVI-H SOP-8 60 13 0.0107 25,34
TK70D06J1 U-MOSIII-H TO-220(W) 60 70 0.0064 39 TPC8050-H U-MOSVI-H SOP-8 60 11 0.0145 25,34
TK70J04J3 U-MOSIII TO-3P(N) 40 70 0.0038 38 TPC8051-H U-MOSVI-H SOP-8 80 13 0.0097 25,34
TK70X04K3 U-MOSIV TFP 40 70 0.0056 38 TPC8052-H U-MOSVI-H SOP-8 40 12 0.0115 24,34
TK70X04K3L U-MOSIV TFP 40 70 0.0056 – TPC8053-H U-MOSVI-H SOP-8 60 9 0.0225 25,34
TK70X04K3Z U-MOSIV TFP 40 70 0.0056 38 TPC8107 U-MOSIII SOP-8 –30 –13 0.007 –
TK70X06K3 U-MOSIV TFP 60 70 0.008 38 TPC8109 U-MOSIII SOP-8 –30 –10 0.02 –
TK7A50D π-MOSVII TO-220SIS 500 7 1.22 40 TPC8110 U-MOSIII SOP-8 –40 –8 0.025 34
TK80A08K3 U-MOSIV TO-220SIS 75 80 0.0045 39 TPC8111 U-MOSIV SOP-8 –30 –11 0.012 34
TK80D08K3 U-MOSIV TO-220(W) 75 80 0.0045 39 TPC8112 U-MOSIII SOP-8 –30 –13 0.006 –
TK80X04K3 U-MOSIV TFP 40 80 0.0035 38 TPC8113 U-MOSIV SOP-8 –30 –11 0.01 27,34
TK8A50D π-MOSVII TO-220SIS 500 8 0.85 40 TPC8114 U-MOSIV SOP-8 –30 –18 0.0045 27,34
TK8A50DA π-MOSVII TO-220SIS 500 7.5 1.0 40 TPC8115 U-MOSIV SOP-8 –20 –10 0.01 27,34
TK8A55DA π-MOSVII TO-220SIS 550 7.5 1.07 40 TPC8116-H U-MOSIII-H SOP-8 –40 –7.5 0.03 25,34
TK8A60DA π-MOSVII TO-220SIS 600 7.5 1 40 TPC8117 U-MOSV SOP-8 –30 –18 0.0039 27,34
TK8A65D π-MOSVII TO-220SIS 650 8 0.84 40 TPC8118 U-MOSV SOP-8 30 13 0.007 27,34
TK9A55DA π-MOSVII TO-220SIS 550 8.5 0.86 40 TPC8120 U-MOSVI SOP-8 –30 –18 0.0032 27,34
TPC6004 U-MOSIII VS-6 20 6 0.024 31 TPC8122 U-MOSV SOP-8 –30 –11 0.008 27,34
TPC6005 U-MOSIII VS-6 30 6 0.028 31 TPC8123 U-MOSVI SOP-8 –30 –11 0.0095 27,34
TPC6006-H U-MOSIII-H VS-6 40 3.9 0.075 24,31 TPC8207 U-MOSIII SOP-8 20 6 0.02 27,34
TPC6007-H U-MOSIII-H VS-6 30 5 0.054 24,31 TPC8208 U-MOSIII SOP-8 20 5 0.05 27,34
TPC6011 U-MOSIV VS-6 30 6 0.020 31 TPC8210 U-MOSIII SOP-8 30 8 0.015 27,34
TPC6103 U-MOSIII VS-6 –12 –5.5 0.035 31 TPC8211 U-MOSIII SOP-8 30 5.5 0.036 27,34
TPC6105 U-MOSIII VS-6 –20 –2.7 0.11 31 TPC8212-H U-MOSIII-H SOP-8 30 6 0.021 34
TPC6107 U-MOSIV VS-6 –20 –4.5 0.055 31 TPC8213-H U-MOSIII-H SOP-8 60 5 0.05 25,34
TPC6108 U-MOSIV VS-6 –30 –4.5 0.06 31 TPC8214-H U-MOSIII-H SOP-8 100 2.2 0.18 25,34
TPC6109-H U-MOSIII-H VS-6 –30 –5 0.059 24,31 TPC8218-H U-MOSVI-H SOP-8 60 3.8 0.057 25,34
TPC6111 U-MOSV VS-6 –20 –5.5 0.04 31 TPC8404 π-MOSV/π-MOSV SOP-8 –250/250 1.1/–0.9 1.7/2.55 34
TPC6201 U-MOSII VS-6 30 2.5 0.095 – TPC8405 U-MOSIV/U-MOSIII SOP-8 –30/30 –4.5/6 0.027 27,34
TPC8012-H π-MOSV SOP-8 200 1.8 0.4 34 TPC8406-H U-MOSIII-H SOP-8 40 6.5 0.03 25,34
TPC8014 U-MOSIII SOP-8 30 11 0.014 27 TPC8406-H U-MOSIII-H SOP-8 –40 –6.5 0.025 25,34
TPC8017-H U-MOSIII-H SOP-8 30 15 0.0066 – TPC8A01 High-speed U-MOSIII SOP-8 30 6 0.018 34

51
 7 MOSFET Part Numbers

Main Characteristics Main Characteristics

Part Number Series Package VDSS ID RDS(ON) Page Part Number Series Package VDSS ID RDS(ON) Page
Max Max
(V) (A) (Ω) (V) (A) (Ω)
TPC8A01 U-MOSIII SOP-8 30 8.5/1 0.0056 34 TPCC8001-H U-MOSV-H TSON Advance 30 22 0.0083 24,33
TPC8A02-H U-MOSIII-H SOP-8 30 16/1 0.0056 – TPCC8002-H U-MOSV-H TSON Advance 30 22 0.0083 24,33
TPC8A03-H U-MOSV-H SOP-8 30 17/1 0.0036 25,34 TPCC8003-H U-MOSIV-H TSON Advance 30 13 0.0169 24,33
TPC8A04-H U-MOSV-H SOP-8 30 18/1 0.0133 25,34 TPCC8005-H U-MOSV-H TSON Advance 30 26 0.0064 24,33
TPC8A05-H U-MOSV-H SOP-8 30 10/1 0.0066 25,34 TPCC8006-H U-MOSIV-H TSON Advance 30 22 0.008 24,33
TPC8A06-H U-MOSV-H SOP-8 30 12 0.0101 25,34 TPCC8007 U-MOSIV TSON Advance 20 27 (0.0046) 27,33
TPCA8003-H U-MOSIII-H SOP Advance 30 35 0.0046 – TPCC8008 U-MOSIV TSON Advance 30 25 0.0068 27,33
TPCA8004-H U-MOSIII-H SOP Advance 30 40 0.009 – TPCC8102 U-MOSV TSON Advance –30 –15 0.0189 27,33
TPCA8005-H U-MOSIII-H SOP Advance 30 27 0.067 – TPCC8103 U-MOSV TSON Advance –30 –18 0.012 27,33
TPCA8006-H π-MOSVII SOP Advance 100 18 0.58 35 TPCC8A01-H U-MOSV-H TSON Advance 30 21 0.0099 25,33
TPCA8008-H π-MOSV SOP Advance 250 4 0.35 25,35 TPCF8002 U-MOSIV VS-8 30 7 0.023 31
TPCA8009-H π-MOSV SOP Advance 150 7 0.45 25,35 TPCF8101 U-MOSIII VS-8 –12 –6 0.028 31
TPCA8010-H π-MOSV SOP Advance 200 5.5 0.0035 25,35 TPCF8102 U-MOSIII VS-8 –20 –6 0.03 31
TPCA8011-H U-MOSIII-H SOP Advance 20 40 0.0049 24,35 TPCF8103 U-MOSIII VS-8 –20 –2.7 0.11 31
TPCA8012-H U-MOSV-H SOP Advance 30 35 0.0049 24,35 TPCF8104 U-MOSIII VS-8 –30 –6 0.028 31
TPCA8014-H U-MOSIII-H SOP Advance 40 30 0.0054 24,35 TPCF8201 U-MOSIII VS-8 20 3 0.049 31
TPCA8015-H U-MOSIII-H SOP Advance 40 35 0.021 24,35 TPCF8301 U-MOSIII VS-8 –20 –2.7 0.11 31
TPCA8016-H U-MOSIII-H SOP Advance 60 25 0.0062 25,35 TPCF8302 U-MOSIII VS-8 –20 –3 0.059 31
TPCA8018-H U-MOSV-H SOP Advance 30 27 0.0031 24,35 TPCF8303 U-MOSIII VS-8 –20 –3 0.058 31
TPCA8019-H U-MOSV-H SOP Advance 30 40 0.027 24,35 TPCF8304 U-MOSIV VS-8 –30 –3.2 0.072 31
TPCA8020-H U-MOSIII-H SOP Advance 40 7.5 0.027 24,35 TPCF8402 U-MOSIII VS-8 –30/30 –3.2/4 0.072/0.05 31
TPCA8022-H U-MOSIII-H SOP Advance 100 22 0.026 25,35 TPCF8A01 U-MOSIII VS-8 20 3 0.049 31
TPCA8023-H U-MOSV-H SOP Advance 30 21 0.0129 24 TPCF8B01 U-MOSIII VS-8 –20 –2.7 0.11 31
TPCA8024 U-MOSIV SOP Advance 30 35 0.0043 27,35 TPCL4201 U-MOSV Chip LGA 20 6 0.031 27,32
TPCA8025 U-MOSIV SOP Advance 30 40 0.0036 27,35 TPCL4202 U-MOSV Chip LGA 30 6 0.04 27,32
TPCA8026 U-MOSIV SOP Advance 30 45 0.0022 27,35 TPCL4203 U-MOSV Chip LGA 24 6 0.036 27,32
TPCA8027-H U-MOSIII SOP Advance 40 30 0.01 24,35 TPCM8001-H U-MOSIII-H TSSOP Advance 30 20 0.0095 33
TPCA8028-H U-MOSVI-H SOP Advance 30 50 0.0028 24,35 TPCM8002-H U-MOSV-H TSSOP Advance 30 30 0.0062 24,33
TPCA8030-H U-MOSV-H SOP Advance 30 24 0.011 24,35 TPCM8003-H U-MOSV-H TSSOP Advance 30 21 0.0129 24,33
TPCA8031-H U-MOSV-H SOP Advance 30 24 0.011 24,35 TPCM8004-H U-MOSV-H TSSOP Advance 30 24 0.011 24,33
TPCA8036-H U-MOSVI-H SOP Advance 30 38 0.0042 24,35 TPCM8A05-H U-MOSV-H TSSOP Advance 30 20 0.0129 25,33
TPCA8039-H U-MOSVI-H SOP Advance 30 34 0.0057 24,35 TPCP8001-H U-MOSIII-H PS-8 30 7.2 0.016 32
TPCA8040-H U-MOSVI-H SOP Advance 30 23 0.0094 24,35 TPCP8003-H U-MOSIII-H PS-8 100 2.2 0.19 25,32
TPCA8045-H U-MOSVI-H SOP Advance 40 46 0.0036 24,35 TPCP8004 U-MOSIV PS-8 30 8.3 0.009 27,32
TPCA8046-H U-MOSVI-H SOP Advance 40 38 0.0054 24,35 TPCP8005-H U-MOSV-H PS-8 30 11 0.0133 24,32
TPCA8047-H U-MOSVI-H SOP Advance 40 32 0.0073 24,35 TPCP8006 U-MOSIV PS-8 20 9.1 0.01 27,32
TPCA8048-H U-MOSVI-H SOP Advance 60 35 0.0066 25,35 TPCP8101 U-MOSIII PS-8 –20 –5.6 0.03 32
TPCA8049-H U-MOSVI-H SOP Advance 60 28 0.0104 25,35 TPCP8102 U-MOSIV PS-8 –20 –7.6 0.018 32
TPCA8050-H U-MOSVI-H SOP Advance 60 24 0.0142 25,35 TPCP8103-H U-MOSIII-H PS-8 –40 –4.8 0.04 25,32
TPCA8051-H U-MOSVI-H SOP Advance 80 28 0.0094 25,35 TPCP8201 U-MOSIII PS-8 30 4.2 0.05 32
TPCA8052-H U-MOSVI-H SOP Advance 40 20 0.0113 24,35 TPCP8202 U-MOSIV PS-8 30 5.5 0.023 27,32
TPCA8053-H U-MOSVI-H SOP Advance 60 15 0.0223 25,35 TPCP8203 U-MOSIII PS-8 40 4.7 0.04 32
TPCA8060-H U-MOSVI-H SOP Advance 30 45 0.0034 24,35 TPCP8301 U-MOSIV PS-8 –20 –5 0.031 32
TPCA8101 U-MOSIII SOP Advance –30 –40 0.007 – TPCP8302 U-MOSIV PS-8 –20 –5 0.033 32
TPCA8102 U-MOSIII SOP Advance –30 –40 0.006 – TPCP8303 U-MOSV PS-8 –20 –3.8 0.04 32
TPCA8103 U-MOSIV SOP Advance –30 –40 0.0042 27,35 TPCP8401 U-MOSIII PS-8 –12/20 –5.5/0.1 0.038/3 32
TPCA8104 U-MOSIII SOP Advance –60 –40 0.016 35,38 TPCP8402 U-MOSIII PS-8 –30/30 –3.4/4.2 0.048/0.072 32
TPCA8105 U-MOSIII SOP Advance –12 –6 0.0033 27,35 TPCP8403 U-MOSIV/U-MOSIII PS-8 –40/40 –3.4/4.7 0.170/0.040 32
TPCA8106 U-MOSV SOP Advance –30 –40 0.0037 27,35 TPCP8404 U-MOSV/U-MOSIV PS-8 –30/30 –4/4 0.05/0.05 32
TPCA8107-H U-MOSIII-H SOP Advance –40 –7.5 0.03 25,35 TPCP8A05-H U-MOSV-H PS-8 30 8 0.0175 32
TPCA8108 U-MOSIII SOP Advance –40 –40 0.0095 35 TPCP8AA1 U-MOSII PS-8 20 1.6 0.105 32
TPCA8A01-H U-MOSIII-H SOP Advance 30 36 0.0056 – TPCP8BA1 U-MOSII PS-8 –20 –1.3 0.18 32
TPCA8A02-H U-MOSV-H SOP Advance 30 34 0.0053 25,35 TPCP8J01 U-MOSIV PS-8 –32/50 –6/0.1 0.035 32
TPCA8A04-H U-MOSV-H SOP Advance 30 44 0.0032 25,35 TPCT4203 U-MOSIV STP2 20 6 0.031 27,32
TPCA8A05-H U-MOSV-H SOP Advance 30 10 0.0129 25,35 TPCT4204 U-MOSIV STP2 30 6 0.038 27,32
TPCA8A08-H U-MOSV-H SOP Advance 30 38 0.0042 25,35

52
 8 Product Obsolescence

8-1 End-of-Life Products

The part numbers in the left-hand column below are end-of-life or obsolete products. When ordering,
please choose from the replacement products in the right-hand column.
End-of-Life Products Replacement Products
Electrical Characteristics Electrical Characteristics
Part Number VDSS ID RDS(ON) Package Part Number VDSS ID RDS(ON) Package
(V) (A) Max(Ω) (V) (A) Max(Ω)
2SJ148 –60 –0.2 2 TO-92 2SJ168 –60 –0.2 2 S-MINI
2SJ167 –60 –0.2 2 N-MINI 2SJ168 –60 –0.2 2 S-MINI
2SJ200 –16 –2 0.71 PW-Mini TPC6105 –20 –2.7 0.11 VS-6
2SJ342 –50 –0.05 50 N-MINI 2SJ343 –50 –0.05 50 S-MINI
2SJ345 –20 –0.05 40 S-MINI SSM3J16FU –20 –0.1 45 USM
2SJ346 –20 –0.05 40 USM SSM3J16FU –20 –0.1 45 USM
2SJ347 –20 –0.05 40 SSM SSM3J16FS –20 –0.1 45 SSM
2SJ511 –30 –2 0.76 PW-Mini TPC6108 –30 –4.5 0.006 VS-6
2SJ525 –30 –5 0.12 TPS TPCF8104 –30 –6 0.028 VS-8
2SK1061 60 0.2 1 N-MINI SSM3K7002BF 60 0.2 2.1 S-MINI
2SK1120 1000 8 1.8 TO-3P (N) 2SK2613 1000 8 1.7 TO-3P (N)
2SK1825 50 0.05 50 N-MINI SSM3K7002BF 60 0.2 2.1 S-MINI
2SK1826 50 0.05 50 S-MINI SSM3K7002BF 60 0.2 2.1 S-MINI
2SK1827 50 0.05 50 USM SSM3K7002BFU 60 0.2 2.1 USM
2SK1828 20 0.05 40 S-MINI SSM3K15F 30 0.1 7 S-MINI
2SK1829 20 0.05 40 USM SSM3K15FU 30 0.1 7 USM
2SK1830 20 0.05 40 SSM SSM3K15FS 30 0.1 7 SSM
2SK2033 20 0.1 12 S-MINI SSM3K15F 30 0.1 7 S-MINI
2SK2034 20 0.1 12 USM SSM3K15FU 30 0.1 7 USM
2SK2035 20 0.1 12 SSM SSM3K15FS 30 0.1 7 SSM
2SK2036 20 0.1 6 S-MINI SSM3K15F 30 0.1 7 S-MINI
2SK2037 20 0.1 6 USM SSM3K15FU 30 0.1 7 USM
2SK2312 60 45 0.017 TO-220NIS 2SK3844 60 45 0.0058 TO-220NIS
2SK2466 100 30 0.046 TO-220NIS TK40A10K3 100 40 0.015 TO-220SIS
2SK2543 500 8 0.85 TO-220NIS TK8A50D 500 8 0.85 TO-220SIS
2SK2544 600 6 1.25 TO-220AB 2SK3761 600 6 1.25 TO-220AB
2SK2545 600 6 1.25 TO-220NIS TK6A60D 600 6 1.25 TO-220SIS
2SK2549 16 2 0.29 PW-Mini TPC6004 20 6 0.024 VS-6
2SK2604 800 5 2.2 TO-3P (N) 2SK3633 800 7 1.7 TO-3P (N)
2SK2605 800 5 2.2 TO-220NIS 2SK4013 800 6 1.7 TO-220SIS
2SK2610 900 5 2.5 TO-3P (N) 2SK3700 900 5 2.5 TO-3P (N)
2SK2611 900 9 1.4 TO-3P (N) 2SK3878 900 9 1.3 TO-3P (N)
2SK2661 500 5 1.5 TO-220AB 2SK3758 500 5 1.5 TO-220AB
2SK2662 500 5 1.5 TO-220NIS TK5A50D 500 5 1.5 TO-220SIS
2SK2698 500 15 0.4 TO-3P (N) TK15J50D 500 15 0.4 TO-3P (N)
2SK2700 900 3 4.3 TO-220NIS 2SK3564 900 3 4.3 TO-220SIS
2SK2717 900 5 2.5 TO-220NIS 2SK3565 900 5 2.5 TO-220SIS
2SK2718 900 2.5 6.4 TO-220NIS 2SK3566 900 2.5 6.4 TO-220SIS
2SK2746 800 7 1.7 TO-3P (N) 2SK3633 800 7 1.7 TO-3P (N)
2SK2749 900 7 2 TO-3P (N) 2SK4115 900 7 2 TO-3P (N)
2SK2750 600 3.5 2.2 TO-220NIS TK4A60DA 600 3.5 2.2 TO-220SIS
2SK2823 20 0.1 40 S-MINI SSM3K35FS 20 0.18 20 SSM
2SK2824 20 0.1 40 USM SSM3K35FS 20 0.18 20 SSM
2SK2825 20 0.1 40 SSM SSM3K35FS 20 0.18 20 SSM
2SK2837 500 20 0.27 TO-3P (N) TK20J50D 500 20 0.27 TO-3P (N)
2SK2842 500 12 0.52 TO-220NIS TK12A50D 500 12 0.52 TO-220SIS
2SK2843 600 10 0.75 TO-220NIS TK10A60D 600 10 0.75 TO-220SIS
2SK2844 30 35 0.02 TO-220AB TK70D06J1 60 70 0.0064 TO-220 (W)
2SK2915 600 16 0.4 TO-3P (N) 2SK3903 600 14 0.44 TO-3P (N)
2SK2996 600 10 1 TO-220NIS 2SK4112 600 10 1 TO-220HIS

53
8 Product Obsolescence

End-of-Life Products Replacement Products

Electrical Characteristics Electrical Characteristics
Part Number VDSS ID RDS(ON) Package Part Number VDSS ID RDS(ON) Package
(V) (A) Max(Ω) (V) (A) Max(Ω)
2SK2964 30 2 0.18 PW-Mini TPC6003 30 6 0.024 VS-6
2SK3067 600 2 5 TO-220NIS 2SK3767 600 2 4.5 TO-220SIS
2SK3084 100 30 0.046 TO-220FL/SM – – – – –
2SK3089 30 40 0.03 TO-220FL/SM 2SK3847 40 32 0.018 TO-220SM
2SK3090 30 45 0.02 TO-220FL/SM 2SK3847 40 32 0.018 TO-220SM
2SK3125 30 70 0.007 TO-3PSM 2SK3843 40 75 0.0035 TFP
2SK3126 450 10 0.65 TO-220NIS 2SK3869 450 10 0.68 TO-220SIS
2SK3127 30 45 0.012 TO-220FL/SM 2SK3847 40 32 0.018 TO-220SM
2SK3128 30 60 0.012 TO-3P (N) 2SK3843 40 75 0.0035 TFP
2SK3129 50 60 0.007 TO-3P (N) 2SK3845 60 70 0.0058 TO-3P (N)
2SK3130 600 6 1.55 TO-220NIS 2SK3947 600 6 1.4 TO-220SIS
2SK3236 60 35 0.02 TO-220NIS 2SK3662 60 35 0.0125 TO-220NIS
2SK3316 500 5 1.8 TO-220NIS 2SK3868 500 5 1.7 TO-220NIS
2SK3389 30 75 0.005 TFP 2SK3843 40 75 0.008 TFP
2SK3397 30 75 0.006 TFP 2SK3843 40 75 0.0035 TFP
2SK3407 450 10 0.65 TO-220NIS 2SK3869 450 10 0.68 TO-220SIS
2SK3439 30 75 0.005 TFP 2SK3843 40 75 0.0035 TFP
2SK3440 60 50 0.008 TFP 2SK3842 60 75 0.0058 TFP
2SK3441 60 75 0.0058 TFP 2SK4034 60 75 0.0058 TFP
2SK3442 100 45 0.02 TFP TK40D10J1 100 40 0.015 TO-220 (W)
2SK3443 150 30 0.055 TFP TK50X15J1 150 50 0.03 TFP
2SK3499 400 10 0.55 TFP TK10X40D✽ 400 10 0.55 TFP
2SK3543 450 2 2.45 TO-220NIS 2SK3757 450 2 2.45 TO-220SIS
2SK982 60 0.2 1 TO-92 SSM3K7002BF 60 0.2 2.1 S-MINI
HN1J02FU –20 –0.05 40 US6 SSM6P16FU –20 –0.1 45 US6
HN1K02FU 20 0.05 40 US6 SSM6N16FU 20 0.1 15 US6
HN1K03FU 20 0.1 12 US6 SSM6N16FU 20 0.1 15 US6
HN1K04FU 50 0.05 50 US6 SSM6K7002BFU 60 0.2 2.1 US6
HN1K05FU 20 0.1 40 US6 SSM6N35FU 20 0.18 20 US6
HN1K06FU 20 0.1 6 US6 SSM6N15FU 30 0.1 7 US6
HN1L02FU 20 0.05 40 US6 SSM6L35FU 20 0.18 20 US6
HN1L03FU 50 0.05 50 US6 – – – – –
HN4K03JU 20 0.1 12 UFV SSM5N15FU 30 0.1 7 USV
SSM3J01F –30 –0.7 0.6 S-MINI SSM3J01T –30 –1.7 0.6 TSM
SSM3J02F –30 –0.6 0.7 S-MINI SSM3J02T –30 –1.6 0.7 TSM
SSM3J15TE –30 –0.1 32 TESM SSM3J15FV –30 –0.1 32 VESM
SSM3J16TE –20 –0.1 45 TESM SSM3J16FV –20 –0.1 45 VESM
SSM3K01F 30 1.3 0.15 S-MINI SSM3K01T 30 3.2 0.15 TSM
SSM3K02F 30 1 0.25 S-MINI SSM3K02T 30 2.5 0.25 TSM
SSM3K03C 20 0.1 12 SS-CSP SSM3K16CT 20 0.1 15 CST3
SSM3K03FE 20 0.1 12 ESM SSM3K16FS 20 0.1 15 SSM
SSM3K03TE 20 0.1 12 TESM SSM3K16FV 20 0.1 15 VESM
SSM3K04FE 20 0.1 12 ESM SSM3K04FS 20 0.1 12 SSM
SSM3K126TU 30 3.9 0.043 UFM SSM3K131TU 30 6 0.0415 UFM
SSM3K15TE 30 0.1 7 TESM SSM3K15FV 30 0.1 7 VESM
SSM3K16TE 20 0.1 15 TESM SSM3K16FV 20 0.1 15 VESM
SSM3K302T 30 3 0.071 TSM SSM3K316T 30 4 0.065 TSM
SSM3K311T 30 4.6 0.043 TSM SSM3K315T 30 6 0.0415 TSM
SSM6G06FE –20 –0.1 45 ES6 – – – – –
SSM6H06FE 20 0.1 15 ES6 – – – – –
TPC6106 –40 –3.9 0.08 VS-6 – – – – –
TPCT4201 20 6 0.031 STP TPCT4203 20 6 0.031 STP2
TPCT4202 30 6 0.038 STP TPCT4204 30 6 0.038 STP2
TPC6201 30 2.5 0.095 VS-6 TPCP8202 30 5.5 0.023 PS-8
TPC8301 –30 –3.5 0.12 SOP-8 TPCF8304 –30 3.2 0.105 SOP-8
TPC8303 –30 –4.5 0.035 SOP-8 – – – – –
✽: Under development

54
 9 Packaging

9-1 Compact Surface-Mount Packages

Toshiba offers a broad range of packaging 100

SOP Advance
options suitable for various mobile applications,
including ultra-small, thin packages; those TSSOP Advance

specifically designed for lithium-ion battery TSON Advance

protection circuits; high-current packages with SOP-8

a thermal fin on the bottom. 10

PS-8

Drain Current, ID (A)

VS-8
VS-6
UF6
Chip LGA UFM STP2 STP TSM
TSSOP-8

ES6 S-Mini
SMV
CST3B

UFV

US6

VESM SSM USM

CST4

CST6D

CST3 ESV USV

0.1
0.1 1 10 100
Footprint Area (mm2)

■ CST3 Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.2

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ0.5
0.6 0.05

8.0
0.25 0.03 0.25 0.03

1.1
0.5 0.03
X X’
0.6
1.0 0.05
0.65 0.02

Y’
Y’ 0.47
0.7
0.35 0.3 0.35

Tape feeding direction Cross section: Y-Y’

X X’
0.65

0.38
Cross section: X-X’ 11.4
0.05 0.03

5.0 9.0
0.15 0.03
0.35 0.02 Reel dimensions
0.05 0.03 Bottom View
0.16 0.22
+0.02
0.38 –0.03

φ180
φ60

Packing quantity 10000 pcs/reel

■ CST3B Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

4.0 ±0.1 φ1.5 ±0.1
0.2
A
A
1.75

0.8 ± 0.05
3.5 ±0.05

0.70 ± 0.03
0.04 M A B
8.0

B B’
3
1.36

1.3
0.65 ± 0.03
0.2 ± 0.02

0.7
0.05 ± 0.03
1.2 ± 0.05

A’ φ0.5 0.6
0.65

0.25 ± 0.03

2.0 ±0.05 A’
0.25 0.2 0.65

B B’
Tape feeding direction 11.4
0.65

0.9 5.0 9.0

0.04 M A B
2 1 Reel dimensions
0.05 ± 0.03
0.25 ± 0.03 Bottom View 0.25
0.1
0.45
φ180
φ60

0.45
- 0.03
0.48 + 0.02

Packing quantity 10000 pcs/reel

55
 9 Packaging

9-1 Compact Surface-Mount Packages

■ VESM (SOT-723) Unit: mm

2.0 ±0.05 4.0 ±0.05 0.18
Package dimensions Typical PCB land pad dimensions Tape dimensions
φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ0.5

8.0

1.35
0.22 ± 0.05

X X’
1.2 ± 0.05 0.5
Y’
0.8 ± 0.05 Y’ 0.63

0.45
1.3 Tape feeding direction Cross section: Y-Y’
0.32 ± 0.05
1.2 ± 0.05
0.8 ± 0.05
0.4 0.4

1 X X’

1.15
2 0.4 Cross section: X-X’ 11.4
3 5.0
Reel dimensions 9.0
0.13 ± 0.05

0.45
0.5 ± 0.05

0.4 0.4

φ180
φ60
Packing quantity 8000 pcs/reel

■ SSM (SOT-416)(SC-75) Unit: mm

2.0 ±0.05 4.0 ±0.1 0.2
Package dimensions Typical PCB land pad dimensions Tape dimensions
φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ0.5

8.0

1.8
1.6 ± 0.2 0.6 X X’
0.2 - 0.05

0.8 ± 0.1 Y’
+ 0.1

Y’ 0.95
1.75
Tape feeding direction Cross section: Y-Y’
1.6 ± 0.2
1.0 ± 0.1

0.6
0.5 0.5

1 X X’

2 3 Cross section: X-X’ 11.4

0.15 ± 0.05

1.4

5.0
Reel dimensions 9.0
0.7 ± 0.1
0.55

0 to 0.1 0.5 0.5

φ180
φ60

Packing quantity 3000 pcs/reel

■ USM (SOT-323)(SC-70) Unit: mm

2.0 ±0.05 4.0 ±0.1 0.2
Package dimensions Typical PCB land pad dimensions Tape dimensions
φ1.5 ±0.1 Y
Y
1.75
3.5 ±0.05

φ1.05
8.0

2.1 ± 0.1
2.3

1.25 ± 0.1 0.5 X X’

+ 0.1
-0

Y’
Y’
0.3

1.25
0.65 0.65
2.0 ± 0.2
1.3 ± 0.1

1 2.2 Tape feeding direction Cross section: Y-Y’

1.0

X X’
2 3
Cross section: X-X’ 11.4
1.9

5.0
Reel dimensions 9.0
0.15 - 0.05
+ 0.1
0.90 ± 0.1

0.7

0.65 0.65
φ180
φ60

0 to 0.1

Packing quantity 3000 pcs/reel

56
■ UFM Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.2

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ1.1

8.0

2.3
0.65 ± 0.05
2.1 ± 0.1 0.5 X X’

Y’
1.7± 0.1 Y’ 0.85
Tape feeding direction Cross section: Y-Y’

0.8
2.2

- 0.05
0.3 + 0.1
2.0 ± 0.1

1 X X’
2 3

1.9
Cross section: X-X’
0.166 ± 0.05 11.4
5.0 9.0
Reel dimensions
0.7 ± 0.05

0.65 0.65

φ180
φ60
Packing quantity 3000 pcs/reel

■ S-Mini (SOT-346)(SC-59) Unit: mm

0.25
Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ1.1

8.0

3.3
+ 0.5
2.5 X X’
- 0.3
+ 0.25 0.8 Y’
1.5
- 0.05

- 0.15
+ 0.1

Y’ 1.35
Tape feeding direction Cross section: Y-Y’
3.25
0.4

1.0
0.95 0.95
2.9 ± 0.2

1 X X’
1.9

2 3
2.4

Cross section: X-X’

11.4
- 0.06

5.0
+ 0.1
0.3

9.0
Reel dimensions
+ 0.2
- 0.1

0.16

0.95 0.95
1.1

0 to 0.1

φ180
φ60

Packing quantity 3000 pcs/reel

■ TSM Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.25

φ1.5 ±0.1 Y
Y
1.75
3.5 ±0.05

φ1.1
8.0

+ 0.2
3.1

2.8 - 0.3
X X’
+ 0.2 0.8
1.6 - 0.1 Y’
0.4 ± 0.1

Y’ 0.9
Tape feeding direction Cross section: Y-Y’
3.15
1.0
0.95 0.95
2.9 ± 0.2
1.9 ± 0.2

1
X X’
2 3
2.4

Cross section: X-X’ 11.4

0.16 ± 0.05

5.0 9.0
Reel dimensions
0.15
0.7 ± 0.05

0.95 0.95

0 to 0.1
φ180
φ60

Packing quantity 3000 pcs/reel

57
 9 Packaging

■ CST4 Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.05 0.2

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ0.5

8.0

1.35
0.8 ± 0.05
X X’
0.5 0.5
0.05 ± 0.04 0.2 ± 0.02

0.3 ± 0.02
Y’
Y’ 0.5
1.2 ± 0.05

Tape feeding direction Cross section: Y-Y’

0.075 ± 0.04
0.95
0.75

X X’

0.75
Cross section: X-X’ 11.4
5.0 9.0
Bottom View Reel dimensions

0.3
- 0.03
0.38 + 0.02

0.2

φ180
φ60
Packing quantity 10000 pcs/reel

■ ESV (SOT-553) Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.18

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ0.5

8.0

1.75
X X’

1.6 ± 0.05 Y’
1.2 ± 0.05 0.3 Y’ 0.65
0.2 ± 0.05

Tape feeding direction Cross section: Y-Y’

1.75
5 0.45
1.6 ± 0.05

1 X X’
0.5 0.5

2 1.0
Cross section: X-X’ 11.4
3
1.35

5.0 9.0
4 0.5 0.5 Reel dimensions
0.12 ± 0.05
0.55 ± 0.05

φ180
φ60

Packing quantity 4000 pcs/reel

■ USV (SOT-353)(SC-88A) Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 0.25
2.0 ±0.05 4.0 ±0.1

φ1.5 ±0.1 Y
Y
1.75
3.5 ±0.05

φ1.1
8.0

2.1 ± 0.1
2.3

1.25 ± 0.1
0.4 X X’

Y’
0.2 - 0.05

Y’ 1.2
+ 0.1
0.65 0.65
2.0 ± 0.2

0.8
1.3 ± 0.1

1 5 Tape feeding direction

2.2

2 X X’
1.9

11.4
3 4 5.0 9.0
Reel dimensions
0.15 - 0.05
+ 0.1
0.9 ± 0.1

0.65 0.65
φ180
φ60

0 to 0.1

Packing quantity 3000 pcs/reel

58
■ UFV Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.05 0.18

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ1.1

8.0

2.3
2.1 ± 0.1 X X’
0.45
1.7 ± 0.1 Y’
Y’ 0.85

0.3 -0.05
5

+0.1
1

0.8
2.2 Tape feeding direction Cross section: Y-Y’
0.65 0.65
1.3 ± 0.1

2.0 ± 0.1
2 X X’

1.9
3 Cross section: X-X’
4 11.4
5.0 9.0
Reel dimensions
+0.06
0.16 -0.05
0.7 ± 0.05

0.65 0.65

φ180
φ60
Packing quantity 3000 pcs/reel

■ SMV (SOT-25)(SC-74A) Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.25

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ1.1

8.0
+ 0.2
2.8

3.23
- 0.3
+ 0.2 X X’
1.6 - 0.1 0.95 0.95
Y’
Y’ 1.3
0.4 ± 0.1
0.95

1 5 Tape feeding direction

2.9 ± 0.2
1.9 ± 0.2

3.2

X X’
0.95

2.4

2
4
11.4
5.0 9.0
3 Reel dimensions
1.0
- 0.06
+ 0.1
+ 0.2
- 0.1

0.16

0.8 0.6 0.8

1.1

φ180
φ60
0 to 0.1

Packing quantity 3000 pcs/reel

■ CST6D Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

1.75 ±0.1

0.2 ±0.05
4.0 ±0.05 φ1.5 +0.1/-0 B
B
0.05 ± 0.03

1.0 ± 0.05
3.5 ±0.05

0.15 ± 0.03
8.0 ±0.1

0.98 ±0.05
1.13

0.35
± 0.03 ± 0.03

A A’
0.9 ± 0.05

0.6 ± 0.02
0.4

B’
1.13 φ0.5 ±0.05
B’
0.45

2.0 ±0.05
A A’ 0.48 ±0.05
0.2

Tape feeding direction

0.6

1.08 ±0.05
0.25 0.15

0.075 ± 0.03 11.4

0.35 0.35 5.0 9.0
± 0.02 ± 0.02 Reel dimensions
0.7 ± 0.03 Bottom View

0.2 0.15
- 0.03
0.38 + 0.02

φ180
φ60

Packing quantity 10000 pcs/reel

59
 9 Packaging

■ ES6 (SOT-563) Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.18

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ0.5

8.0

1.75
0.2 ± 0.05
X X’
1.2 ± 0.05 0.3
Y’
Y’ 0.65

0.45 Tape feeding direction Cross section: Y-Y’

1.6 ± 0.05
1.0 ± 0.05

1.75
1 6
0.5 0.5

X X’
2 5
1.0

1.35
Cross section: X-X’ 11.4
3 4 0.5 0.5
0.12 ± 0.05
5.0 9.0
Reel dimensions
0.55 ± 0.05

1.6 ± 0.05

φ180
φ60
Packing quantity 4000 pcs/reel

■ US6 (SOT-363)(SC-88) Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.1 0.25

φ1.5 ±0.1 Y
Y

1.75
3.5 ±0.05
φ1.1

8.0

2.3
2.1 ± 0.1 X X’
0.4
1.25 ± 0.1
Y’
Y’
- 0.05

1.2
+ 0.1
0.65 0.65

Tape feeding direction

1.3 ± 0.1

0.8
2.0 ± 0.2

1 6 2.2
0.2

2 5 X X’
1.9

3 4 11.4
0.15 ± 0.05

5.0 9.0
Reel dimensions
0.9 ± 0.1

0.65 0.65
0 to 0.1

φ180
φ60

Packing quantity 3000 pcs/reel

■ UF6 Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 4.0 ±0.05 0.18

φ1.5 ±0.1 Y
Y
1.75
3.5 ±0.05

φ1.1
8.0

2.3

2.1 ± 0.1
0.45 X X’
1.7 ± 0.1
Y’
Y’ 0.85
6
0.3 -0.05
+0.1

1
0.8

Tape feeding direction

2.2
0.65 0.65
1.3 ± 0.1

2.0 ± 0.1

2
5 X X’
1.9

3 11.4
4
5.0 9.0
Reel dimensions
+0.06
0.16 -0.05
0.7 ± 0.05

0.65 0.65
φ180
φ60

Packing quantity 3000 pcs/reel

60
■ VS-6 Unit: mm

Package dimensions Typical PCB land pad Tape dimensions

dimensions φ1.5
4.0
0.3
A

1.75

φ1.1
6 4

3.5
8.0
B
0.8 0.6 0.8 B'

3.3
5.2
2.75
-0.3
2.8+0.2
-0.1
1.6+0.2
2.0

1.0

A'
A' 1.4
4.0
B 1.55
B'
0.95 1 3 0.3±0.1

2.4
3.05

0.16±0.05
2.9±0.2 11.4
5.0 9.0
0.7±0.05

Reel dimensions
0.05±0.05

0.05 0.25+0.25
-0.15 0.95 0.95

φ180
φ60
Packing quantity 3000 pcs/reel

■ VS-8 Unit: mm

Package dimensions Typical PCB land pad Tape dimensions

dimensions 4.0

1.75
φ1.5 A
2.0
2.9±0.1 A 0.2

0.3+0.1/ –0.05
B B

3.5
0.025 M A

8.0
0.65 (8X)

2.1
2.2
8

2.75
1.5±0.1

1.9±0.1

A
4.0 A 0.95
φ1.1

B B
1 4 3.1
0.65
1.50
0.8±0.05

11.4
5.0 9.0
Reel dimensions
S 0.05 S
0.40 (8X)
A
+0.04
0.71–0.16

0.65 (6X)

φ180
φ60
0.24+0.10
–0.09
+0.04
0.71–0.16

0.475

Packing quantity 4000 pcs/reel

■ PS-8 Unit: mm

Package dimensions Typical PCB land pad Tape dimensions

dimensions φ1.50 0.2
1.75

4.0
0.65 (8X)

0.33±0.05
φ1.1
8.0

0.05 M A 5
3.1

5.5

8
2.75
2.4±0.1
2.8±0.1

2.0 0.95
4.0 1.15
–0.11
0.28 +0.10

1
0.33±0.05 4 B 0.17±0.02
0.475 3.1
–0.12
1.12 +0.13

0.05 M B
2.4

11.4
0.65 5.0 9.0
2.9±0.1
A Reel dimensions
0.8±0.05

–0.12
1.12 +0.13
–0.11

S 0.025 S
φ180

0.40 (8X)
0.28+0.10

φ60

0.65 (6X)

Packing quantity 3000 pcs/reel

61
 9 Packaging

■ TSON Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

0.1 ± 0.05
0.3 ± 0.05

1.75
4 2.0 φ1.5
0.25
0.65 0.05 M A

8 5
3.3 ± 0.3
3.1 ± 0.1

5.5
12
2.65

3.46
1 4 0.65 0.4

(4.75)
0.6 0.4
0.575
φ1.1 1.05
0.85 ± 0.05

3.3 ± 0.3 8.0

0.17 ± 0.03
A
18.5
3.1 ± 0.1
Reel dimensions 120° 13.5

2.2
R135

0.3
R10
S 0.05 M S
0.7± 0.1

4
0.4

φ100
φ330
30
1 4 φ13

2.0
0.25 ± 0.1

2.1 ± 0.1

2.49 ± 0.2

8 5 0.25 ± 0.1 Packing quantity 3000 pcs/reel

■ STP2 Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

4.0
φ1.5 0.3

1.75
2.0

3.8±0.1
1

5.5
0.375 4

12.0

4.0
1.6±0.1
0.375 3
0.42
2
0.025 M B
B 4.0
2.2 0.8
0.6±0.05 φ1.0
L Type R Type
0.75

13
φ180
0.46

0.14±0.04 0.05 S Reel dimensions

2 S 2.49 φ160
0.3±0.1 3 1.61 5 4

0.35+0.06 *1
–0.1

φ60
0.4+0.1 18
–0.06 4 *2
φ76

13
1
0.2±0.05 3
1.93±0.1
1.25±0.1

*1: 2
*2: 4 1.2 1.2

Packing quantity 4000 pcs/reel

■ Chip LGA Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

4.0
1.59 ± 0.05 φ1.55 0.18
B 2.0 B
1.75
1.59 ± 0.05

0.5
3.5

φ0.7
8.0

1.80

φ0.30 A A
0.25 ± 0.05

φ0.50 4.0
B 0.3

0.65
A
0.65

φ0.7 1.75
11.4

0.001
Reel dimensions 5.0 9.0
0.01 S S
φ0.3
1 2 0.65
0.025 M A B
φ180
φ60
0.65

4 0.65 3 Packing quantity 4000 pcs/reel

62
■ TSSOP Advance Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

0.5 ± 0.1
0.25 ± 0.05

1.75
0.8 4.0
0.05 M A 0.3
8 5 2.0 2.0 φ1.55

4.65 ± 0.3
3.65 ± 0.2 +0 5.23
5.05

5.5
0.2 -0.2
1.1

12.0

4.28
9.3

4.1
0.55 0.55

(4.75)
1 4 0.55
0.75 ± 0.05

3.5
2.95 1.0

0.166 ± 0.05
A φ1.7
8.0

0.775
3.5 ± 0.2

1.1 0.85
18.5
Reel dimensions 120 13.5

S 0.05 S
1.05 ± 0.2

R135
R10
0.8 0.55

4.0
1 4

φ100
φ330
30
φ13
0.6 ± 0.1

2.0
2.2 ± 0.2

2.75 ± 0.2

8 5 0.8 ± 0.1
Packing quantity 3000 pcs/reel

■ TSSOP-8 Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

0.3

1.75
4.0 2.0
φ1.55

5.5
12.0
8 5 0.40 (8X)

3.5

3.7
(4.75)
4.4 ± 0.1
6.4 ± 0.3

1.3 (8X)

1.55 8.0 1.1

(0.525) 1 4 0.25 ± 0.05

4.5
0.85 ± 0.05

0.16 +0.04

0.65
-0.02

18.5

3.3 max
Reel dimensions
120˚ 13.5
3.0 ± 0.1

R135
0.05 ± 0.05

0.6 ± 0.2 R10

4.0
0.05
0.65 (6X)

φ100

φ330
30

φ13
2.0

Packing quantity 3000 pcs/reel

■ SOP-8 Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

4.0
1.75

0.3
2.0 2.0 φ1.55

8 5

0.50 (8X) 6.5

5.5
4.4 ± 0.2
6.0 ± 0.3

9.3
12.0

5.3

5.6
1.0 (8X)

(4.75)

0.5

6.8
1 4

0.595 0.4 ± 0.1 8.0 2.55

5.5

0.25 M
1.27
18.5
5.5 max Reel dimensions 120˚ 13.5
5.0 ± 0.2
0.15-0.05
+0.1
0.1 -0.05 1.5 ± 0.2

R135
R10
4.0

1.27 (6X)
+0.1

φ100

φ330
30

0.1 0.5 ± 0.2

φ13
2.0

Packing quantity 3000 pcs/reel

63
 9 Packaging

■ SOP Advance Unit: mm

Package dimensions Typical PCB land pad dimensions Tape dimensions

4.0 0.3

1.75
2.0 2.0 φ1.55

0.5±0.1
1.27 0.4±0.1
0.05 M A
8 5 6.6
6.4

5.5
6.0±0.3
5.0±0.2

12.0

9.3

5.6
5.8
0.15±0.05 1.0

(4.75)
0.75

0.5
0.75
1.2
1 4 0.595 8.0 φ1.7

4.75
4.56
0.95±0.05

0.166±0.05
A

5.0±0.2
Reel dimensions

1.3
18.5
120˚ 13.5

1.15 1.0
S 0.05 S
R135
1.1±0.2

R10

4.0
1 4

1.27 0.75

φ100
φ330
30
0.6±0.1

φ13
3.5±0.2

2.0
4.25±0.2

8 5 0.8±0.1

Packing quantity 3000 pcs/reel

■ PW-Mini Unit: mm
Tape dimensions
4.0 0.3

1.5
ø1.5
2.0 2.0

5.1

5.65
4.6 max 1.6 max

12.0

9.5
1.7 max 0.4 ± 0.05

4.5
4.7
4.85

0.5
2.3
0.8 min 2.5 ± 0.1

4.9
4.2 max

0.9
8.0 1.65
1.8

+0.08
0.45-0.05 Reel dimensions 13
5.0
+0.08
0.4 -0.05 +0.08
0.4 -0.05
1.5 ± 0.1 1.5 ± 0.1

ø180
1 2 3 ø60

1.2
1. Gate 1.2

2. Drain (Heatsink)
3. Source Packing quantity 1000 pcs/reel

■ DP Unit: mm

Tape dimensions
1.7 ± 0.2

4.0
1.75

6.8 max ø3.0

ø1.5
2.0 0.3
5.2 ± 0.2 0.6 max
7.5
16.0

10.1
5.5 ± 0.2

1.5 ± 0.2

6.75
9.6 ± 0.3

6.8
2.7
8.0
0.6 ± 0.15

0.95 max
Reel dimensions 40° 17.5
0.6 ± 0.15
0.6 max 120°
R5
2.5 max

2 ± 0.5
2.3 2.3
R120
2
ø330
ø80
ø13

1 2 3
3 0.5

10
1.1 ± 0.2
0.1 ± 0.1

1. Gate 2.3 2.3

2 2
2. Drain (Heatsink)
3. Source Packing quantity 2000 pcs/reel

64
■ New PW-Mold Unit: mm

6.5 ± 0.2
Tape dimensions

1.5 ± 0.2
4.0

1.75
5.2 ± 0.2 0.6 max ø3.0
2.0 ø1.5 0.3

7.5
16.0
9.5 ± 0.3
5.5 ± 0.2

10.1
1.2 max

6.75
1.1 ± 0.2 6.8
2.7
8.0

0.8 max 40° 17.5

1.5 max Reel dimensions
0.6 ± 0.15 0.6 max
120°
2.3 ± 0.2
R5
2 ± 0.5
1 2 3
0.1 ± 0.1
R120
2

ø330
ø80
ø13
3

10

1. Gate 2.3 ± 0.15 2.3 ± 0.15 2 2

2. Drain (Heatsink)
3. Source Packing quantity 2000 pcs/reel

■ DPAK Unit: mm

Tape dimensions 4.0

1.08 ± 0.2

2.0 φ1.55 ± 0.05

6.6 ± 0.2

1.75
φ1.5 min 2.7
5.34 ± 0.13 0.58 max
1.7

0.6
1.6
7.5
16.0

10.5
6.1 ± 0.12

2.0
+ 0.4
– 0.6
1.0 max

0.3 ± 0.05
10.0

6.9
2.5
8.0

15.9-19.4
Reel dimensions
1.14 max
2.29 22.4 max
+ 0.25
– 0.12

0.76 ± 0.12
2.3 ± 0.1

332 max
1.52
0.07 ± 0.07

13.0 ± 0.20 100 ± 2

16.4

1. Gate 1 2 3

2. Drain (Heatsink)
3. Source Packing quantity 2000 pcs/reel

■ TO-220SM Unit: mm

Tape dimensions
1.75

4.0 0.4
ø1.5 ø2.0
10.3 max 2.0
1.32
11.5
24.0

21.5

13.9
10.6 max

10.75
9.1

0.1
10.8 5.2
1.5

12.0
3 ± 0.2
1.5

0.76 40°
Reel dimensions 24.4
0.6

2.54 ± 0.25 2.54 ± 0.25

120°
R8
2
R120
2
1 2 3
ø330
ø100
ø13
0.5

4.7 max
1.32

4.0
2.6

10
0.1

1. Gate 2 2

2. Drain (Heatsink)
3. Source Packing quantity 1000 pcs/reel

65
 9 Packaging

■ TO-220SM(W) Unit: mm
4.0

1.75
ø1.5 ø2.0 0.4
10.0 ± 0.3 Tape dimensions 2.0

9.5 ± 0.2 0.4 ± 0.1

11.5
24.0

21.5

13.9
10.0 ± 0.3

10.75
9.0
10.8 5.2
1.1 12.0

1.6
Reel dimensions 40° 24.4

3 ± 0.2
120°
0.76 ± 0.1 R8
2
1.4 ± 0.1 2.35 ± 0.1 R120
2

ø330
ø100
2.54 ± 0.25 2.34 ± 0.25 0.4 ± 0.1

ø13
4.0
0.05 ± 0.05

1 2 3 10

3.5 ± 0.2
1. Gate 2.76
2. Drain (Heatsink) 2 2

3. Source Packing quantity 1000 pcs/reel

■ TFP Unit: mm
0.8 max

9.2 max Tape dimensions

1.75
4.0 12.0 2.0 ø1.5 0.30
0.4 ± 0.1
7.0 ± 0.2
1

11.5
24.0
21.5

10.5
9.2 max

9.5
3.0
ø2.0
120°
25.5
Reel dimensions
R135
0.7 max

0.5
R10 60°

.0±
2.0 1.5 2.0 2.5

44.0

ø330
ø80
2 3 4
3.0 max

ø13
1. Drain (Heatsink)
2. Gate
0.4 ± 0.1

1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2 2

3. Source 1
4. Source 2 Packing quantity 1500 pcs/reel

9-2 Through-Hole Packages

■ LSTM ■ PW-Mold (Straight) Unit: mm

1.7 ± 0.2

6.8 max
5.1 max 0.6 max
5.2 ± 0.2
8.2 max
2.2 max

5.5 ± 0.2

0.75 max
1.0 max
1.0

0.8 max
10.5 min

0.6 max
12.0 min

0.95 max 0.6 max

0.6 ± 0.15

1.27 1.27
1.1 ± 0.2

1. Source 1 2 3
1. Gate
0.6 max

2.3 2.3
2.54

2. Drain 2. Drain (Heatsink)

2.5 max
4.1 max

3. Gate 3. Source 1 2 3

■ New PW-Mold2 ■ DP (Straight)

1.5 ± 0.2

6.5 ± 0.2
1.7 ± 0.2

6.8 max
5.2 ± 0.2 0.6 max
5.2 ± 0.2 0.6 max
5.5 ± 0.2

5.5 ± 0.2
1.6

0.9 1.1 ± 0.2

4.1 ± 0.2

5.7

0.6 max 0.95 max

12.0 min

0.6 max
0.6 ± 0.15
2.3 2.3
2.3 ± 0.2

1 2 3
2.5 max

1. Gate 1. Gate 2.3 2.3

1.1 ± 0.2

2. Drain (Heatsink) 0.8 max 0.6 ± 0.15 2. Drain (Heatsink)

1.1 max
3. Source 0.6 ± 0.15 3. Source 1 2 3

66
■ TPS ■ TO-220AB Unit: mm
8.0 ± 0.2 10.3 max ø3.6 ± 0.2

3.0

6.7 max
7.0 ± 0.2

15.7 max
0.5

2.5 max
1.5
0.5
1.4 ± 0.1
1.05 ± 0.1

13.5 min

12.6 min
0.5 + 0.15 1.6 max
- 0.05
0.76

4.7 max
0.5 + 0.15 2.54 ± 0.25
2.5 ± 0.5 2.5 ± 0.5 - 0.05

2.6
1. Source 1. Gate

1.32

0.5
3.5 ± 0.2
2. Drain 2. Drain (Heatsink)
3. Gate 1 2 3
3. Source 1 2 3

1.3
■ TO-220(W) ■ TO-220NIS
10.0 ± 0.3
A ø 3.65 ± 0.2 10 ± 0.3 ø 3.2 ± 0.2 2.7 ± 0.2
9.5 ± 0.2 0.6 ± 0.1

3.0
3.9
3.2 2.8

15 ± 0.3
15.0 ± 0.3

5.6 max
9.0

1.1
1.1
1.1 ± 0.15

13.0 min
0.75 ± 0.25
2.8 max

12.8 ± 0.5

0.75 ± 0.15
0.62 ± 0.15
ø 0.2 M A
+0.25 2.54 ± 0.25 2.54 ± 0.25
0.57 –0.10
4.5 ± 0.2

2.53 ± 0.2
1. Drain 1. Gate

2.6
2.54 2.54

0.75 ± 0.15

4.5 ± 0.2
2. Source 2. Drain
3. Gate 1 2 3 3. Source 1 2 3

■ TO-220SIS ■ TO-220FL
10 ± 0.3 2.7 ± 0.2 10.3 max
ø 3.2 ± 0.2 A 1.32
3.0
3.9

10.6 max
15 ± 0.3

9.1
2.5 max
1.14 ± 0.15
2.8 max

1.6 max
13 ± 0.5

12.6 min
0.76
0.69 ± 0.15
ø 0.2 M A

2.54 2.54
2.54 ± 0.25 2.54 ± 0.25
1. Gate 1. Gate
2.6 ± 0.1

0.5
0.64 ± 0.15

4.7 max
1.32
4.5 ± 0.2

2. Drain 2. Drain (Heatsink)

2.6
3. Source 1 2 3 3. Source 1 2 3

■ TO-3P(N) ■ TO-3P(N)IS
15.9 max ø 3.2 ± 0.2 15.8 ± 0.5 ø 3.6 ± 0.2 3.5
2.0

1.0

4.5

5.5

21.0 ± 0.5
20.0 ± 0.3

3.6 max

15.5
3.3 max

9.0
2.0

2.0
19.4 max
20.5 ± 0.5

2.0 ± 0.3
1.0 + 0.25
- 0.15
+ 0.3
1.0 - 0.25

5.45 ± 0.2 5.45 ± 0.2

5.45 ± 0.2 5.45 ± 0.2

1. Gate 1. Gate 3.15 + 0.2

0.6 - 0.1
+ 0.3
1.8 max

1.0

- 0.1
- 0.15
0.6 + 0.25
2.8

1 2 3
2. Drain (Heatsink) 2. Drain
5.0 ± 0.3
4.8 max

3. Source 1 2 3 3. Source

■ TO-3P(L)
20.5 max ø 3.3 ± 0.2
6.0
26.0 ± 0.5
4.0
2.50

11.0
2.0

2.5
20.0 ± 0.6

3.0

+ 0.3
1.0
- 0.25

5.45 ± 0.15 5.45 ± 0.15

- 0.10
+ 0.25

5.2 max

1. Gate
2.8
0.6

2. Drain (Heatsink)
3. Source 1 2 3

67
OVERSEAS SUBSIDIARIES AND AFFILIATES (As of April 01, 2009)
2009-9
Toshiba America Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd.
Electronic Components, Inc. • Düsseldorf Head Office • Hong Kong Head Office
• Headquarters-Irvine, CA Tel: (0211)5296-0 Fax: (0211)5296-400 Tel: 2375-6111 Fax: 2375-0969 BCE0082B
Tel: (949)623-2900 Fax: (949)474-1330 • France Branch • Beijing Office
• Buffalo Grove (Chicago) Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 Tel: (010)6590-8796 Fax: (010)6590-8791
Tel: (847)484-2400 Fax: (847)541-7287 • Italy Branch • Chengdu Office
• Duluth, GA (Atlanta) Tel: (039)68701 Fax: (039)6870205 Tel: (028)8675-1773 Fax: (028)8675-1065
Tel: (770)931-3363 Fax: (770)931-7602 • Spain Branch • Qingdao Office
• San Jose Engineering Center, CA Tel: (91)660-6798 Fax:(91)660-6799 Tel: (532)8579-3328 Fax: (532)8579-3329
Tel: (408)526-2400 Fax:(408)526-2410 • U.K. Branch Toshiba Electronics Shenzhen Co., Ltd.
• Wixom (Detroit) Tel: (0870)060-2370 Fax: (01252)53-0250 Tel: (0755)2399-6897 Fax: (0755)2399-5573
Tel: (248)347-2607 Fax: (248)347-2602 • Sweden Branch Toshiba Electronics (Shanghai) Co., Ltd.
Toshiba Electronics do Brasil Ltda. Tel: (08)704-0900 Fax: (08)80-8459 • Shanghai Head Office
Tel: (011)2539-6681 Fax: (011)2539-6675 Toshiba Electronics Asia (Singapore) Pte. Ltd. Tel: (021)6841-0666 Fax: (021)6841-5002
Toshiba India Private Ltd. Tel: (6278)5252 Fax: (6271)5155 • Hangzhou Office
Tel: (011)2331-8422 Fax: (011)2371-4603 Toshiba Electronics Service (Thailand) Co., Ltd. Tel: (0571)8717-5004 Fax: (0571)8717-5013
Tel: (02)501-1635 Fax: (02)501-1638 • Nanjing Office
Toshiba Electronics Trading (Malaysia) Sdn. Bhd. Tel: (025)8689-0070 Fax: (025)8689-0125
• Kuala Lumpur Head Office Toshiba Electronics (Dalian) Co., Ltd.
Tel: (03)5631-6311 Fax: (03)5631-6307 Tel: (0411)8368-6882 Fax: (0411)8369-0822
• Penang Office Tsurong Xiamen Xiangyu Trading Co., Ltd.
Tel: (04)226-8523 Fax: (04)226-8515 Tel: (0592)226-1398 Fax: (0592)226-1399
Toshiba Electronics Philippines, Inc. Toshiba Electronics Korea Corporation
Tel: (02)750-5510 Fax: (02)750-5511 • Seoul Head Office
Tel: (02)3484-4334 Fax: (02)3484-4302
• Daegu Office
Tel: (053)428-7610 Fax: (053)428-7617
Toshiba Electronics Taiwan Corporation

MOSFETs
• Taipei Head Office
Tel: (02)2508-9988 Fax: (02)2508-9999
• Kaohsiung Office
Tel: (07)237-0826 Fax: (07)236-0046

Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware,
software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is
permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and
for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could
cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and
comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used
with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use
of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs,
algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES
NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics
appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily
high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact
(“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment
used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and
escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual
property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by
estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM
EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR
INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA,
AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING
WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use,
stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology
may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related
software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all
applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for
damages or losses occurring as a result of noncompliance with applicable laws and regulations.

2009
Previous edition: BCE0082A
2009-9(1k)SO-DQ

Semiconductor Company
Website: http://www.semicon.toshiba.co.jp/eng