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2 SD 1669

This document provides product specifications for the Inchange Semiconductor 2SD1669 silicon NPN power transistor. It has a TO-220F package and is intended for use in applications requiring high current switching such as relay drivers, inverters, and converters. Key specifications include an absolute maximum collector current of 12A, collector-emitter saturation voltage below 0.4V, DC current gain between 70-280, and transition frequency above 10MHz. Switching times are also provided.

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Luis Alberto Baca Vaccaro
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126 views3 pages

2 SD 1669

This document provides product specifications for the Inchange Semiconductor 2SD1669 silicon NPN power transistor. It has a TO-220F package and is intended for use in applications requiring high current switching such as relay drivers, inverters, and converters. Key specifications include an absolute maximum collector current of 12A, collector-emitter saturation voltage below 0.4V, DC current gain between 70-280, and transition frequency above 10MHz. Switching times are also provided.

Uploaded by

Luis Alberto Baca Vaccaro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1669

DESCRIPTION
・With TO-220F package
・Complement to type 2SB1136
・Low collector saturation voltage
・Wide safe operating area

APPLICATIONS
・For relay drivers,high-speed inverters,
converters,and other general high-current
switching applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Emitter

T O R
导体 D UC
半 N
固电 IC O
Absolute maximum ratings (Ta=25℃)
SYMBOL

E
PARAMETER
S EM CONDITIONS VALUE UNIT

A NG
H
VCBO Collector-base voltage Open emitter 60 V

VCEO

VEBO
INC
Collector-emitter voltage

Emitter-base voltage
Open base

Open collector
50

6
V

IC Collector current 12 A

ICM Collector current-peak 15 A

Ta=25℃ 2
PC Collector dissipation W
TC=25℃ 30

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1669

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=6A ;IB=0.6A 0.4 V

ICBO Collector cut-off current VCB=40V ;IE=0 100 μA

IEBO Emitter cut-off current VEB=4V; IC=0 100 μA

hFE-1 DC current gain IC=1A ; VCE=2V 70 280

hFE-2 DC current gain IC=5A ; VCE=2V 30

TOR
fT Transition frequency IC=1A ; VCE=5V 10 MHz

导体 D U C
半 ON
固电
Switching times

M I C
E SE
ton Turn-on time 0.10 μs

A NG IC=2.0A;IB1=-IB2=0.2A

H
ts Storage time 1.20 μs

INC
VCC=20V;RL=4Ω

tf Fall time 0.05 μs

‹ hFE-1 Classifications

Q R S

70-140 100-200 140-280

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1669

PACKAGE OUTLINE

T O R
导体 D UC
半 N
固电 EM IC O
E S
H A NG
IN C
Fig.2 Outline dimensions

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