MINOR PROJECT REPORT

ON
“GENERATION OF HVDC FROM VOLTAGE MULTIPLIER USING
MARX GENERATOR”
SUBMITTED IN PARTIAL FULFILLMENT

FOR AWARD OF DEGREE OF

BACHELOR OF TECHNOLOGY

IN
ELECTRICAL ENGINEERING DEPARTMENT
IET, MJPRU, BAREILLY

UNDER GUIDANCE PROJECT

COORDINATOR

Mr. A.R. ANSARI Dr. SULABH SACHAN

ASST. PROFESSOR ASST. PROFESSOR

I.E.T. MJPRU BAREILLY I.E.T. MJPRU

BAREILLY

SUBMITTED BY: -

ATUL PASWAN (16EE11)

AMAN KUMAR CHAURASIA (17EE71)

DEEPAK VERMA (17EE73)

MINTU KUMAR (17EE75)

 INSTITUTE OF ENGINEERING AND TECHNOLOGY

MAHATMA JYOTIBHA PHULE ROHILKHAND UNIVERSITY

BAREILLY
DEPARTMENT OF ELECTRICAL ENGINEERING

CERTIFICATE
This is to certify that the project titled “Generation Of HVDC From Voltage Multiplier Using Marx
Generator” is the bona fide work carried out by Atul Paswan (16EE11), Aman Kumar Chaurasia (17EE71),
Deepak Verma (17EE73), Mintu Kumar (17EE75), students of B.Tech (EE) of ELECTRICAL
DEPARTMENT INSTITUTE OF ENGINEERING AND TECHNOLOGY MAHATMA JYOTIBHA
PHULE ROHILKHAND University, BAREILLY during the academic year 2016-20, in partial fulfillment of
the requirements for the award of the degree of Bachelor of Technology (Electrical Engineering), is a record of
minor project carried out by them. They have worked under my supervision and guidance and have fulfilled the
requirements which, to my knowledge, have reached the requisite standard for submission of this dissertation.

________________

RESPECTED A.R. ANSARI

ASSISTANT PROFESSOR

EE DEPARTMENT

I.E.T. M.J.P.R.U.
 ACKNOWLEDGEMENT

We would like to express our gratitude to our guide Mr. A.R. Ansari, Asst. Professor, Department of Electrical
Engineering, I.E.T, MJPRU for his guidance and support throughout this project work. He has been a constant
source of inspiration to us throughout the period of this work. He has shared his valuable time and knowledge
throughout the project period and checked our daily progress. We consider ourselves extremely fortunate for
having the opportunity to learn and work under his supervision over the entire period. Finally, we would like to
thank our HOD sir and department for giving us this chance to complete the project with all the facilities needed
for it.

ATUL PASWAN (16EE11)

AMAN KUMAR CHAURASIA (17EE71)

MINTU KUMAR (17EE75)

DEEPAK VERMA (17EE73)

 ABSTRACT

Generation of HVDC From Voltage Multiplier Using Marx Generator

The MARX theory was given by Erwin Otto Marx . Its aim is to produce a high voltage pulse by capacitors in
parallel to charge up in the on time and then connected in series to induce higher voltage during off time. This
theory is used to produce voltage in KV’s in real time for finding the insulation of the electronic instruments
such as transformers and the insulation of the electric lines. The model contains of 4 parts is consists of one
MOSFET,a capacitor, and two diodes. . A 555 timer give pulses for the capacitors to charge in parallel during
ON time. During OFF time of the pulses capacitors are connected in series with the help of MOSFET. MOSFET
is used in the form of switch ,diodes are for charge the capacitor without power loss because we used four stages
in our model so it will gives 3 times of input supply. This model is very compact and easy to implement.

1. INTRODUCTION
CONTENTS
The advancement of strong state hardware, strong
1. INTRODUCTION state gadgets are turning out to be increasing more
reasonable for beat power application. They could
furnish the beat force frame works with smallness,
2. DEVELOPMENT OF MARX unwavering quality , termination rate, and durable.
The ascending of beat power generator utilizing
strong gadgets kills constraints of regular segments,
GENERATOR and guarantees beat power innovation to be
generally utilized in business application.

3. SYSTEM DISCRIPTION Be that as it make, strong state exchanging gadgets

for ex- MOSFET accessible currently are just
appraised as much as a couple of kilovolts. The
greater part of beat power frameworks request a lot
4. CIRCUIT DIAGRAM
higher voltage appraisal.

5. DESIGN DETAILS
2. ADVANCEMENT OF MARX
GENERATOR
6. APPLICATION
2.1 Traditional MARX Generator

7. CONCLUSION The generator capacitance first charges and

afterwards released into the waves forming the
circuits . A solitary capacitor might be utilized for
voltage near about 200 KV. For delivering
8. FUTURE WORK
extremely high voltages , a group of capacitors
charges in parallel and afterwards released in series.

9. REFERENCES The hole separating with end goal that the

breakdown strength of the whole G is more
prominent than the charging voltage. In this manner,
everyone of the capacitance of voltage V, in around
one moment. At the point the exciting generator is currents move through the resistance and a heap.
to be released the whole G are made to start over at
the same time by some outside methods. In this way So as to tackle these issues, new MARX circuits are
, everyone of the capacitor C got associated in planned. These new better circuits used solid state
arrangement and released into the heap capacitor. switches for ex- MOSFET or IGBT.
The released time steady CRc 1/ n will be extremely
2.2 CURRENT MARX GENERATOR
little contrasted with time constant CRs(charging)
which will not many exceptionally little by little With the advancement of strong state hardware are
contrasted with charging time steady CRs which’ll turning out to be increasingly more appropriate for
some moments. beat power application. They could furnished the
beat force frameworks with the conservative ,
The game plan to charge the capacitors in parallel
unwavering quality , high redundancy rate and
and afterwards interfacing them in arrangements for
durable.
releasing was initially anticipated by ERWIN Otto
Marx in 1923 which is appeared in fig1. Generally, Ascending of beat power generators utilizing strong
the charging opposition is picked to restrain the state components take out restriction of traditional
charging-current to around 50-100 miliampere, and segments , & guarantees beat power innovation to be
the generator capacitor is picked with the end goal broadly utilized in business applications . None the
that the item CRc is about 10 sec to 1 min. less , solid state exciting devices for ex- MOSFET
accessible presently are just appraised as much as a
couple of kilovolt (KV). Already , it utilized flash
hole in the form of switches which are supplanted by
electronic switches for ex- MOSFET & resistance as
isolater is supplanted by diodes. Subsequently,
conventional Marx generator had disadvantages. For
ex- low redundancy rate , less life time , vast fullness
are dispensed by current MARX generator as
appearing fig 2.

Fig.1: Traditional Marx Generator

There are few bad marks in the ordinary Marx circuit

as follows:

 Low productivity as a result of similar

explanation referenced previously .
 Low re-iteration rate in view of a
similar explanation.
Fig.2: Contemporary Structure of Marx
Generator
 Short life time of the sparkle hole
switches.
 Long charging in light of fact that the 2.3 CHARGE MODE
charging current moves through the
charging resistor.
 Turn OFF is unthinkable as a result of
In this mode, MOSFETs are at Off state . As
utilizing the flash hole switches.
appeared fig2 , the recurrence transformer T passes
 Few yields voltage in charging
the vitality to the optional bridges from a generator
duration on grounds that the charging
of high redundancy rate sine voltages. By means of
the inductor and diode D , the Capacitors C in
parallel are charged by the high voltage. The
inductor goes about as a present limiter and cause
increased in the voltage of capacitor.

2.4 RELAESE MODE

In this mode, IGBTs turn on

simultaneously. Then they are at on-state and,
consequently, the capacitors are linked in series.
Thus, the load could acquire a negative high
Fig. 3 Block Diagram Of Marx Generator
voltage which is the sum of the voltage of
capacitors. Via IGBTs, the capacitors discharge
their energy to the load. Diodes take place of Essential vitality foundation is made as ac supply. It
resistors as the isolator in conventional Marx steeped down to reasonable voltage and amended to
generator. Capacitors C, inductor L and diode get consist ant DC supply for chargeing the
D1 compose of another discharge loop. In this capacitors. Capacitors are charged storage device.
mode, the inductor L isolates high output The charging of capacitor happens in parallel
voltage apart from the rectify bridge. connection with rectifier. At the point when the
capacitor is having proper charged, switches are
Some demerits of conventional Marx circuit are utilized to associate all capacitor in arrangements &
improved as follows. release of capacitors occur and we get n times of
 Relatively short charging time because rectifier voltage at output. Due to different reorients
the charging current flows through the the voltage to some degree not exactly small n*V
diodes instead of the charging resistors. (where n is stage)
Relatively high efficiency because of
the same reason mentioned above. 3.1 Enhancement Type MOSFET
Relatively high repetition rate because of Despite the fact that there are few similitudes in
the same reason. development and method of activity between
 Turn-off is possible because enhancement type and upgrade type MOSFETs are
of using the semiconductor very not the same as anything go up to this point.
switches instead of the spark gap The exchange band is not characterized by
switches. Shockley’s condition, and the channel flow is
Long life time of the switches. presently cut off until the incoming to source voltage
reaches at a particular point. Especially, current
control in a n channel device is presently affected by
a positive carrier to source voltage as opposed to the
scope of negative voltages experienced for n channel
JFETs and n channel enhancement type MOSETs.

3.2 Essential Construction

3. SYSTEM DISCRIPTION The essential development of the n channel

enhancement type MOSFETs is given in figure
below. A section of p-type material is framed from
a silicon base and is again is alluded to a the
substrate likewise the exhaustion type MOSFETs is
now and again inside associated with the source
terminal, while in different cases a fourth lead is there are in truth two turn one-sided p-n intersections
made accessible for outer control of its latent between the n-doped areas and the p substrate to
capacity level. The source and channel terminals are restrict any critical leakage among channel and
again associated through metallic contacts to and source. In fig. below the two VDS & VGS have been
doped locales, yet note in figure the nonappearance set at some positive voltage more not worthy than
of a channel between two n doped regions. This is zero volt, building up the channel and gate at a
the primary contrast between the development of positive potential concerning the source. The
exhaustion type and enhancement type MOSFETs – positive potential at the entryway will pressure the
the nonappearance of the channel as a built segment openings in the p-substrate along the edge of the
of the gadget. The SiO2 layer is as yet present to SiO2 layer to leave the territory and enter further
disconnect the entryway metallic stage from the area locales of the p-substrate, as appeared in the figure.
between the channel and source, however now it is The output is the consumption region close to the
essentially isolated from a segment of the p-type SiO2 layer drained of openings. Nonetheless, the
material. In synopsis, in this manner, the electrons in the p-substrate (minority carrier) will be
development of an enhancement type MOSFET is pulled into the positive side and gather in the area
very like that of the exhaustion type MOSFET, aside close to the outside of the SiO2 layer. The SiO2 layer
from the nonattendance of a channel between the and its protecting characteristics will keep the
channel and source terminals. negative carriers from being assimilated at the
incoming terminal. As VGS increases, the
recombination of electrons to the SiO2 surface
increases until saturation of n-type region can
bolster a quantifiable stream among channel and
source. The degree of VGS that output in the critical
increment in channel current is known as the cutoff
voltage. On particular layers it is alluded to as VGS,
in spite the fact that VT is less clumsy and will be
utilized in investigation to follow. Since the channel
is nonexistent wit VGS_0 volt and upgraded : by the
utilization of a positive entryway to source voltage.

3.4 Opto-isolator

The Opto-isolater is a device that transfer electrical

signals between two inaccessible circuits using
photo signal. Opto-isolaters avoid high voltage from
disturbing the system delivery signal. It is basically
a bundle that contains both the infrared LED and a
Figure 4 n-Channel enhancement-type
photo sencer, for example, a silicon diode, transistor,
MOSFET
Darlington pair or SCR. They are instructed with the
3.3 Fundamental Operation & Characteristics reaction time so little that they can be use to transmit
information in MHz
On the off state that VGS is set at 0 V & a voltage
applied between the channel and wellspring of the
device the non appearance of a n-channel (with its
liberal number of free carriers) will bring about a
current of adequately zero appears very not quiet
the same as exhaustion type MOSFET & JFET
where ID _IDSS it is not adequate to have an
enormous gathering of carriers(e) at the channel and
source (because of the n doped areas) if a way
neglects to exist between the two. With VDS some
positive voltage, VGS at zero voltage, and terminal
SS straightforwardly associated with the source,
 5. CONFIGURATION DETAILS

5.1 Timer

• Ton = 0.693 (R1+R2) C

= 0.693 (10000+1000) 100*10^-9

= 0.7ms

• Toff = 0.693*R2*C

= 0.693*10000*100*10^-9

= 0.6ms

• Duty cycle = Ton/(Ton + Toff)

= 0.7ms/(0.7ms+0.6ms)
Figure 5 Two Litronix opto-isolators. (Courtesy
Siemens Components, Inc.)
= 53.8%

4. CIRCUIT DIAGRAM
6. APPLICATION
The circuit diagram is shown in below diagram in
this a 555 timer is used in the astable mode. This Particularly emergency clinic squander water
timer used for the production of square wave in the substance huge measure of destructive microscopic
positive half the diodes got forward bias now the organisms which spread dieses in the event that they
capacitors is connected in parallel and charging are not evacuated. As indicated by WHO it ought to
up.In the circuit there is MOSFET are used as switch be prepared before goes into seepage framework. In
it consists three terminals Drain, Source and this manner in a roundabout way it controls the water
Gate.The connections are shown in the diagram . contamination.

By controlling obligation cycle of gadget yield beat

waveform can be controlled. Microorganisms in
fluid can be wiped out by high voltage beat electric
field.

The harm of microorganism cells and microscopic

organisms layer will happen if high voltage is
applied with the upsides of heartbeat electric field
protection innovation PEF is most require way by
nourishment preparing industry.

Yield beats of the strong state Marx generator is

applied to the heap as fluid. Here fluid can be
squander water or fluid nourishment. The fluid is
coursing through or put between two anodes which
comprise a treatment chamber hole where two
terminals are put at certain separation.
Figure 6 Circuit diagram
 7. CONCLUSION higher additionally the higher voltage can be
accomplish without utilizing beat transformer.

The recreation gives the possibility of HVDC age 5. With higher heartbeat recurrence the rate
i.e., 2kV utilizing circle holes. In this examination, voltage diminishes of capacitors under 10 % can be
strong state gadgets, for example, MOSFET and accomplished.
diodes utilized in MARX generator to supplant of
hole switches & resistors. The quantity of This conservative proficient Marx generator can be
MOSFETS utilized chooses the occasions the made with five phases developed utilizing 1200 V
voltage ought to be duplicated. In this investigation MOSFET and 1 KV diodes working with 1 KV
we have utilized four phases in equipment and the variable DC input voltage and at higher recurrence.
circuit duplicates the info voltage effectively. New non warm purification process on fluid should
Besides, it is sensible MOSFET carters use strategy be possible with decreased generally cost and
for self-provided power. The MARX generator is sparing in vitality the introduced topology taxi
utilized to duplicate voltage by utilizing MOSFETs. brings a totally degree of capacity in bacterial
inactivation process for fluid nourishment and waste
water.

8. FUTURE WORK

The yield voltage can remain expanded to slightly 10. REFERENCES

necessary higher incentive by expanding the
quantity of stages. The exchanging gadgets 1) MARX generator on Wikipedia.org.
MOSFETs can be supplanted by some additional 2) “Marx Generator”ecse.rpi.edu.(ed.explains
exchanging gadgets. the Fibercon 2019 pulser experimented
within the RPI Plasma dynamics
1. As the beat reiteration of rate is higher, the
laboratory).
vitality taken from the source is diminishes and
3) High Voltage experiments Handbook by
subsequently overall economy can be accomplished.
Jim Lux.
2. The yield voltage stays consistent where as 4) Eectrical4you.com an educational website.
required vitality is extensively diminished. 5) Hidenori Akiyama, "Solid-State Dual Marx
Generator With a Short Pulse width", IEEE
3. Source rating size of capacitor MOSFET Trans. on Plasma Science, Vol. 41, No. 10,
current rating and misfortunes diminishes October 2013.
subsequently Compaq size of entire module is 6) Ron P H Privet lecture notes on High
accomplished. Power Pulse Technics.
7) Pai S T,Zhang Q 1989 Introduction to
4. By supplanting the cumbersome aloof part power pulse technology.
voltage proficiency and heartbeat reiteration is