DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION ★ ORDERING INFORMATION

The 2SK3355 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE
designed for high current switching applications.
2SK3355 TO-220AB
2SK3355-S TO-262
FEATURES
2SK3355-ZJ TO-263
• Super low on-state resistance:
2SK3355-Z TO-220SMDNote
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A)
Note TO-220SMD package is produced only
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A)
in Japan.
• Low Ciss: Ciss = 9800 pF TYP.
(TO-220AB)
• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±83 A
±332
Note1
Drain Current (pulse) ID(pulse) A
Total Power Dissipation (TC = 25°C) PT 100 W (TO-262)
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note2
Single Avalanche Current IAS 75 A
Note2
Single Avalanche Energy EAS 562 mJ

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

(TO-263, TO-220SMD)
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

THERMAL RESISTANCE
Channel to Case Rth(ch-C) 1.25 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D14132EJ2V0DS00 (2nd edition) The mark ★ shows major revised points.
Date Published May 2000 NS CP(K) © 1999, 2000
Printed in Japan
 2SK3355

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 42 A 4.6 5.8 mΩ

RDS(on)2 VGS = 4.0 V, ID = 42 A 6.1 8.8 mΩ

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 42 A 39 77 S

Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA

Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 9800 pF

Output Capacitance Coss 1500 pF

Reverse Transfer Capacitance Crss 630 pF

Turn-on Delay Time td(on) ID = 42 A, VGS(on) = 10 V, VDD = 30 V, 130 ns

Rise Time tr RG = 10 Ω 1450 ns

Turn-off Delay Time td(off) 510 ns

Fall Time tf 510 ns

Total Gate Charge QG ID = 83 A , VDD = 48 V, VGS = 10 V 170 nC

Gate to Source Charge QGS 28 nC

Gate to Drain Charge QGD 46 nC

Body Diode Forward Voltage VF(S-D) IF = 83 A, VGS = 0 V 0.99 V

Reverse Recovery Time trr IF = 83 A, VGS = 0 V, 64 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 130 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T.
D.U.T.
RG = 25 Ω L
RL VGS
PG. VGS 90 %
50 Ω VDD 10 % VGS(on)
Wave Form 0
RG
VGS = 20 → 0 V PG. VDD
ID 90 %
90 %
IAS BVDSS ID
VGS 10 %
VDS ID 0 10 %
ID 0 Wave Form

VDD τ td(on) tr td(off) tf

τ = 1 µs ton toff
Starting Tch Duty Cycle ≤ 1 %

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D14132EJ2V0DS00

 2SK3355

★ TYPICAL CHARACTERISTICS (TA = 25 °C )

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
140
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

120
100

100
80
80
60
60
40
40

20 20

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

1000

ID(pulse) PW
=1
0µ
d s
ite )
im 0 V
ID - Drain Current - A

)L 1 ID(DC)
100 ( on
S
= 10
S
RD t V G 0µ
s
(a
1m
10 s
DC m
s
Di
ss
ipa
10 tio
n
Lim
ite
d

TC = 25˚C
Single Pulse
1
0.1 1 10 100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - ˚C/W

100
Rth(ch-A) = 83.3 ˚C/W

10

1 Rth(ch-C) = 1.25 ˚C/W

0.1

Single Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D14132EJ2V0DS00 3

 2SK3355

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE
1000 Pulsed

500
ID - Drain Current - A

100

ID - Drain Current - A
400
TA = −50˚C
25˚C VGS =10 V
10 75˚C 300
150˚C
200 4.0 V
1
100

VDS = 10 V Pulsed
0.1
1 2 3 4 5 6 0 1.0 2.0 3.0 4.0
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
10
| yfs | - Forward Transfer Admittance - S

100 VDS = 10 V
Pulsed
Pulsed

10

TA = 150˚C 5 ID = 42 A
1 75˚C
25˚C
−50˚C
0.1

0.01 0
0.01 0.1 1 10 100 0 5 10 15 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE THRESHOLD VOLTAGE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(th) - Gate to Source Threshold Voltage - V

3.0
Pulsed VDS = 10 V
15
ID = 1 mA
2.5

2.0
10

VGS = 4.0 V 1.5

5 1.0
10 V

0.5

0 0
1 10 100 1000 −50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4 Data Sheet D14132EJ2V0DS00

 2SK3355

RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE
CHANNEL TEMPERATURE FORWARD VOLTAGE
12 1000
Pulsed Pulsed

ISD - Diode Forward Current - A

10
VGS = 10 V
VGS = 4.0 V 100
10 V
8
VGS = 0 V
6 10

1
2

ID = 42 A
0
0.1
−50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SWITCHING CHARACTERISTICS

SOURCE VOLTAGE
100000 10000
VGS = 0 V

td(on), tr, td(off), tf - Switching Time - ns

f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF

tr

10000 Ciss 1000

td(off)

tf
1 000 Coss 100
td(on)
Crss

100 10
0.1 1 10 100 0.1 1 10 100

VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAIN CURRENT
1000 100 10
di/dt = 100 A/µs
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns

VGS = 0 V
VGS VGS - Gate to Source Voltage - V
80 8

100 VDD = 48 V
60 30 V 6
12 V

40 4
10
VDS
20 2

ID = 83 A
1 0
0.1 1.0 10 100 0 20 40 60 80 100 120 140 160

IF - Drain Current - A QG - Gate Charge - nC

Data Sheet D14132EJ2V0DS00 5

 2SK3355

SINGLE AVALANCHE ENERGY vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
1000 160
VDD = 30 V
RG = 25 Ω
IAS - Single Avalanche Energy - mJ

140
VGS = 20 V → 0 V

Energy Derating Factor - %

IAS ≤ 75 A
120
100 IAS = 75 A
100
EAS 80
=5
62 m
J
60
10
40
VDD = 30 V
RG = 25 Ω 20
VGS = 20 V → 0 V
1 0
10 µ 100 µ 1m 10 m 25 50 75 100 125 150
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

6 Data Sheet D14132EJ2V0DS00

 2SK3355

PACKAGE DRAWINGS (Unit: mm)

1) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut)

1.0±0.5
10.6 MAX. 4.8 MAX. 4.8 MAX.
3.0±0.3

φ 3.6±0.2 (10) 1.3±0.2

1.3±0.2
10.0 4

8.5±0.2
5.9 MIN.

15.5 MAX.

1 2 3
4

12.7 MIN.
1 2 3 1.3±0.2
6.0 MAX.

12.7 MIN.

1.3±0.2
0.75±0.3 0.5±0.2 2.8±0.2
2.54 TYP. 2.54 TYP.
0.75±0.1 0.5±0.2 2.8±0.2 1.Gate
2.54 TYP. 2.54 TYP. 2.Drain
3.Source
1.Gate 4.Fin (Drain)
2.Drain
3.Source
4.Fin (Drain)

Note
3) TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z)

(10) 4.8 MAX.

(10) 4.8 MAX.
1.3±0.2
1.3±0.2
4
4
1.0±0.5

8.5±0.2
1.0±0.5

8.5±0.2

3.0±0.5
11±0.4
5.7±0.4

1.4±0.2 )
1.4±0.2 ) .5R R)
R (0 8
(0.5 R) 1.0±0.3 (0
. 0.5±0.2
0.7±0.2 .8
(0 0.5±0.2 2.54 TYP. 1
2.54 TYP. 1 2 3 2.54 TYP.
2 3 2.54 TYP.
1.Gate
1.Gate
2.Drain
2.Drain
3.Source
2.8±0.2

3.Source
2.8±0.2

4.Fin (Drain)
4.Fin (Drain)

Note This Package is produced only in Japan.

EQUIVALENT CIRCUIT

Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
Body
Gate Diode an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Gate
Protection Source
Diode

Data Sheet D14132EJ2V0DS00 7