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4 Mosfet Notes Beee

(1) MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, which is a 3-terminal semiconductor device. It has a source, drain, and gate terminal, with the substrate often grounded. (2) There are two types of MOSFETs - N-channel and P-channel - defined by the polarity of the charge carriers in the channel. N-channel MOSFETs have an enhancement mode where a threshold voltage must be exceeded to form a conducting channel. (3) MOSFETs can operate as an amplifier in saturation mode where the drain current depends primarily on the gate-source voltage, or as a switch where it is either fully on or

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Srinivasa Rao Sura
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531 views

4 Mosfet Notes Beee

(1) MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, which is a 3-terminal semiconductor device. It has a source, drain, and gate terminal, with the substrate often grounded. (2) There are two types of MOSFETs - N-channel and P-channel - defined by the polarity of the charge carriers in the channel. N-channel MOSFETs have an enhancement mode where a threshold voltage must be exceeded to form a conducting channel. (3) MOSFETs can operate as an amplifier in saturation mode where the drain current depends primarily on the gate-source voltage, or as a switch where it is either fully on or

Uploaded by

Srinivasa Rao Sura
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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MOSFET

Introduction: Metal Oxide Semiconductor Field effect Transistor, It works on the principle of
Field Effect. It is a 3 terminal Device and the terminals are (i) Source (ii) Drain (iii) Gate and the
4th terminal is called Bulk which is generally grounded.
Types of MOSFET:
Based on the channel there are 2 types of MOSFET (i) N-Channel (ii) P-channel
N-channel Enhancement MOSFET is the one which does not have the channel (n-type) before
the application of positive Gate voltage. And it is needed to apply some minimum Gate voltage
for the formation of the channel which is called Threshold voltage (𝑉𝑇𝑁 for P channel MOSFET
it is𝑉𝑇𝑃 ).

N-channel Depletion MOSFET is the one which has the channel (n-type) even before the
application of positive Gate voltage. But the width of the channel can be controlled by changing
the input Gate voltage. For example to increase the channel width a positive Gate voltage can be
applied and to decrease the channel width negative Gate voltage can be applied. And the shape
of the channel will be like a wedge as shown in the figure
Structure: 2 N+ regions are diffused in a p-substrate on which a thin layer of SiO2 is fabricated
on which there will be a thin metallic layer for Gate connection as shown in the figure.SiO2 layer
functions as a Dielectric (Insulator) between metallic plate and p-type semiconductor region (p-
substrate). Hence these three layers (Metal, Dielectric and semiconductor) acts as Gate
capacitance.
Operation of N-channel Enhancement MOSFET:
Symbols for MOSFET:

Operation in the circuit and Characteristics (Common Source Configuration):


Here the analysis is done keeping the source common to both input and output i.e
Input voltage is given to Gate to Source (𝑉𝐺𝑆 )
Input Current is ‘0’ (DC Value)
Output voltage is taken across Drain to source (𝑉𝐷𝑆 )
Output current is Drain Current (𝐼𝐷 )
Output Characteristics (Drain Characteristics) is a graph between the output current (𝐼𝐷 ) and
Output voltage (𝑉𝐷𝑆 ) at constant Input voltage (𝑉𝐺𝑆 )
Observation: 𝐼𝐷 increases with 𝑉𝐷𝑆 initially and becoming approximately constant. And this
constant current is higher for higher values of input voltage (𝑉𝐺𝑆 ).
Note: It is clear from the characteristics (Figure above) that for +ve values of 𝑉𝐺𝑆 , 𝐼𝐷 is high as
the channel is enhanced. And for –ve values of 𝑉𝐺𝑆 the Id is low as the channel is reduced in
width (Deplettion Mode).

Operation of MOSFET as a Switch:


The Drain current (𝐼𝐷 ) increases with 𝑉𝐷𝑆 in Ohmic region in approximately linear manner
where 𝑉𝐺𝑆 >𝑉𝑇𝑁 & 𝑉𝐺𝑆 -𝑉𝑇𝑁 <𝑉𝐷𝑆 . Hence the MOSFET can be treated as an ON Switch with
some resistance. And the Drain current is given by
2
𝐼𝐷 =𝐾𝑁 (2(𝑉𝐺𝑆 -𝑉𝑇𝑁 ) 𝑉𝐷𝑆 -𝑉𝐷𝑆 ) for [𝑉𝐺𝑆 >𝑉𝑇𝑁 & 𝑉𝐺𝑆 -𝑉𝑇𝑁 <𝑉𝐷𝑆 ]
𝐼𝐷 =𝐾𝑁 (2(𝑉𝐺𝑆 -𝑉𝑇𝑁 ) 𝑉𝐷𝑆 -𝑉𝐷𝑆 ^2) for [𝑉𝐺𝑆 >𝑉𝑇𝑁 & 𝑉𝐺𝑆 -𝑉𝑇𝑁 <𝑉𝐷𝑆 ]
Where 𝐾𝑁 =A constant that depends upon the dimensions of the MOSFET
𝑉𝑇𝑁 = Minimum Gate voltage (𝑉𝐺𝑆 min) that is to be applied for the formation of the
channel.
So if 𝑉𝐺𝑆 <𝑉𝑇𝑁 there will be no channel, hence no Drain current (𝐼𝐷 =0). This is called Cutoff
region where the MOSFET can be treated as an OFF Switch.

Operation of MOSFET as an Amplifier:


In the region where the Drain current (𝐼𝐷 ) is approximately constant with respect to 𝑉𝐷𝑆 but
changing with 𝑉𝐺𝑆 is called Saturation region. i.e for 𝑉𝐺𝑆 >𝑉𝑇𝑁 && 𝑉𝐺𝑆 -𝑉𝑇𝑁 >𝑉𝐷𝑆 .
The expression for Drain current is given by
𝐼𝐷 =𝐾𝑁 (𝑉𝐺𝑆 − 𝑉𝑇𝑁 )2 for [𝑉𝐺𝑆 >𝑉𝑇𝑁 && 𝑉𝐺𝑆 -𝑉𝑇𝑁 >𝑉𝐷𝑆 ]
It is clear from the expression that Output current (Drain current-𝐼𝐷 ) is only depending upon
input voltage (Gate voltage-𝑉𝐺𝑆 ). Hence the MOSFET can be used as an Amplifier (Voltage
controlled Device).

DC Analysis:
The objective of the DC analysis is to find the Operating point which gives the DC
values of voltages that are to be applied to make the MOSFET operated in Saturation region(to
analyze or design an amplifier).
DC Load line: This is KVL (Kirchhoff’s Voltage law) Equation of the Output path of MOSFET
circuit (as shown in the above figure).
i.e 𝑉𝐷𝐷 =𝐼𝐷 R+𝑉𝐷𝑆
The above equation is a linear equation in 𝑽𝑫𝑺 and 𝑰𝑫 . The intersection points of this load line
with the output characteristics (or Drain Characteristics) curve are Points Qs (Switching ON),
Qo (Operating point), Qc (Cutoff). The Operating point Qo is always in between two extremes
Qs and Qc to make MOSFET operated as an Amplifier.

Small Signal Equivalent of MOSFET:

This is the circuit which gives the operation of MOSFET in the neighborhood of operating point.
In case of amplifier the signal to be amplified will be introduced as fluctuation at the operating
point to get the proportional fluctuation in the Drain current (output current in case of Common
Source configuration).
Common Source (CS) MOSFET Amplifier: The circuit diagram of general MOSFET (n-
channel) CS amplifier is given below .The capacitor Cin acts as a clamping capacitor to make
sure that the input signal is shifted to operating point (i.e it adds DC to input signal that is needed
to make the transistor work as an amplifier). The capacitor Cout subtract DC to give only
amplified input signal

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