MODULE-2

FETs:
Importance of FETs (MOTIVATION):

FET (stands for Field Effect Transistor) is another semiconductor device

like BJT which can be used as switch or amplifier but principle of
operation is entirely different from that of BJT.

 It is developed in early 1960 and it has emerged as important

semiconductor device today replacing Junction transistors in majority
of the applications requiring high input impedance.
 FETs have many advantages over BJTs and Vacuum tubes used earlier
are their small size, easy to fabricate and its fabrication process suits
Integrated Circuits(IC) fabrication.
 They are also famous because of their Low power consumption and
high input impedance which reduces complexity in AC analysis of FET
amplifier compared to BJT.

TYPES OF FETS:

Basically we have two types of FETs

i. Junction Field Effect Transistor (JEFT)

ii. Metal Oxide Semiconductor Field Effect Transistor (MOSEFT)

Junction Field Effect Transistor (JEFT):

 The junction field effect transistor or JFET is one of the simplest

transistors from the structural point of view.
 It is a voltage controlled semiconductor device. In this, the current is
carried by only one type of carriers. That is why it is called as unipolar
device.
 It has a very high input Impedance (electrical resistance). JFET
consists of a doped Si or GaAs bar. There are ohmic contacts, the two
ends of the bar and semiconductor junction on its two sides.

 If the semiconductor bar is n-type, the two sides of the bar is

heavily doped with p-type impurities and this is known as n-channel
JFET.

 On the other hand if the semiconductor bar is p-type, the two sides
of the bar is heavily doped with n-type impurities and this is known as
p-channel JFET.

 With application of voltage between the two ends, a current which is

carried by the majority carriers of the bar flows along the length of the
bar.

 The terminal through which the majority carrier enter the bar is known
as Source(S) and the terminal through which they leave is known as
drain(S).The heavily doped region on the two sides(common terminal)
is known as the gate(G).

The junction in junction field effect transistor is a reverse biased.

As a result, depletion regions form, which extend to the bar. By
changing gate to source voltage, the depletion width can be controlled.
So, the effective cross section area decreased with increasing reverse
bias. So, the drain current is a function of the gate to the source
voltage.

At present, JFET based circuit design are available, Where it is used

mainly as an amplifier and as a switch.
Construction details of N-Channel JFET
 A semiconductor bar of n-type material is taken and ohmic
contacts are made on either ends of the bar. Terminals are
brought out from these ohmic contacts and named as drain
and source as shown in the figure below.

 On the other two sides of the n-type semiconductor bar,

heavily doped p-type regions are formed to create a p-n
junction. Both these p-type regions are connected together via
ohmic contacts and the gate terminal is brought out as seen
below. Figure 2.1 and 2.2 below shows the n-channel and p-
channel JFET with symbols respectively.

Figure2.1 N Channel JFET

 The arrow on the gate indicates the direction of the current.

Current flows through the length of the n-type bar (channel)
due to majority charge carries which in this case are electrons.
  When a voltage is applied between the two ends, a current
which is carried by the majority carriers electrons flows along
the length of a bar.
 The majority carriers enter the bar through the source terminal
and leave through the drain terminal.
 The heavily doped regions of the n-type bar are known as the
gates.
The gate source junctions is reverse is biased as a result
depletion regions from which extend to the bar by changing
gate to source voltage effective cross sectional area decreases
with the function of the gate to source voltage.

Construction details of P-Channel JEFT

Figure2.2 P- Channel JFET

 p-channel JFET consists of a p-type silicon or GaAs. Two sides of the

bar is heavily doped with n-type impurities.
 When a voltage is applied between the two ends, a current which is
carried by the majority carrier holes flow along the length of a bar.
The gate source junction is reverse biased as a result depletion regions
 form, which extend to the bar by changing gate to extend to source
voltage the depletion width can be controlled.
 The effective cross sectional area decreased with increasing reverse
bias, so the drain current is the function of the gate to source voltage.

Biasing of JFET

The working of JFET can be explained as follows:

Case-i:

When a voltage VDS is applied between drain and source

terminals and voltage on the gate is zero as shown in fig.3(i),
the two pn junctions at the sides of the bar establish depletion
layers.

                           Fig.3 (i)

The electrons will flow from source to drain through a channel

between the depletion layers
The size of the depletion layers determines the width of the
channel and hence current conduction through the bar.

Case-ii:

When a reverse voltage VGS is applied between gate and source

terminals, as shown in fig.3 (ii),  the width of depletion layer is
increased.

                          Fig.3 (ii)

This reduces the width of conducting channel, thereby

increasing the resistance of n-type bar.Consequently, the
current from source to drain is decreased.

On the other hand, when the reverse bias on the gate is

decreased, the width of the depletion layer also decreases. This
increases the width of the conducting channel and hence
source to drain current.
A p-channel JFET operates in the same manner as an n-channel
JFET except that channel current carriers will be the holes
instead of electrons and polarities of VGS and VDS are reversed.

JEFT Characteristics:

Drain Characteristics With External Bias:

The circuit diagram for determining the drain

characteristics with different values of external bias is
shown in Fig.2(i). and a family of drain characteristics
for different values of gate-source voltage V GS is shown
in Fig.2(ii).

Fig.2 (i)
Fig.2 (ii)

It is observed that as the negative gate bias voltage VGS is increased;

(1) The maximum saturation drain current becomes smaller because the
conducting channel now becomes narrower.

(2) Pinch-off voltage is reached at a lower value of drain current I D than

when VGS = 0.

When an external bias of, say – 1 V is applied between the gate and the
source, the gate-channel junctions are reverse-biased even when drain
current, ID is zero. Hence the depletion regions are already
penetrating the channel to a certain extent when drain-source
voltage, VDS is zero.
Due to this reason, a smaller voltage drop along the channel (i.e. smaller than that for V GS = 0)
will increase the depletion regions to the point where they pinch-off the current. Consequently,
the pinch-off voltage VP is reached at a lower drain current, ID.

(3) Value of drain-source voltage VDS for the avalanche breakdown of the gate junction is
reduced.

It is simply due to the fact that gate-source voltage, VGS keeps adding to the reverse bias at the
junction produced by current flow.
Transfer Characteristic of JFET

The transfer characteristic for a JFET can be determined

experimentally, keeping drain-source voltage, VDS constant and
determining drain current, ID for various values of gate-source
voltage, VGS.

The circuit diagram is shown in fig.3 (i).

Fig.3 (i)

The curve is plotted between gate-source voltage, V GS and drain

current, ID, as shown in fig. 3 (ii). 
Fig.3 (ii)

It can be observed that:

(i) Drain current decreases with the increase in negative gate-

source bias

(ii) Drain current, ID = IDSS when VGS = 0

(iii)  Drain current, ID = 0 when VGS = VD

The transfer characteristic can also be derived from the drain

characteristic by noting values of drain current,
ID corresponding to various values of gate-source voltage,
VGS for a constant drain-source voltage and plotting them.

It may be noted that a P-channel JFET operates in the same way

and have the similar characteristics as an N-channel JFET
except that channel carriers are holes instead of electrons and
the polarities of VGS and VDS are reversed.

Applications of JFET

The junction field effect transistor has many application in the

field of electronics and communication.
Some of these applications are stated below.

1. Low noise and high input impedance amplifier:- Noise is an

undesirable disturbance which interferes with the signals
information - greater the noise less the information. Energy
 electronics device cause some amount of noise. If FET s is
used at the front end, we get less amount of amplified noise
at the output. Now, it has very high input impedance. So, it
can be used in high input impedance amplifier.
2. Buffer Amplifier:- Buffer amplifier should have very high
input impedance and low output impedance. Because of high
i/p impedance and low output impedance, FET acts as great
buffer amplifier. the common drain mode can be used in this
purpose.
3. R.F.Amplifier:- JFET is good in low current signal operation
as it is a voltage controlled semiconductors device. It has
very low noise level. So, it can be used as RF amplifier in
receiver sections of communication field.
4. Current Source:- Here all the supply voltage appears
across load. If the current tries to increase very much, the
excessive load a current drives the JFET in to active region.
Thus JFET acts as a current source.
5. Switch:- JFET may be used as an on/off switch controlling
electrical power to load. An example is given below

Chopper:- When a source wave is applied to the gate of

JFET witch, the chopper operation can be done using JFET.
 6. Multiplexer:- Analog multiplexer circuit can be made using
JFETs. An example is given below.

                                    Fig.4
Difference between JFET and BJT

The JFET differs from an ordinary BJT in the following ways:

1. In a JFET, there is only one type of carrier, i.e. holes in p-

type channel and electrons in n-type channel. For this
reason it is also called unipolar transistor. However, in an
ordinary BJT, both electrons and holes play role in
conduction. Therefore, it is called as bipolar transistor.
2. As the input circuit of a JFET is reversing biased, therefore,
it has a high input impedance. However, the input circuit
 of a BJT is forward biased and hence has low input
impedance.
3. The primary functional difference between the JFET and
BJT is that no current enters the gate of JFET. However, in
typical BJT base current might be a few µA.
4. A BJT uses the current into its base to control a large
current between collector and emitter. Whereas a JFET
uses voltage on the gate terminal to control the current
between drain and source.
5. In JFET, there is no junction. Therefore, noise level in JFET
is very small.
Advantages of JFET

A JFET is a voltage controlled, constant current device in which

variation in input voltage control the output current. Some of
the advantages of JFET are:

1. It has a very high input impedance. This permits high

degree of isolation between the input and output circuits.
2. The operation of a JFET depends upon the bulk material
current carriers that do not cross junctions. Therefore, the
inherent noise of tubes and those of transistors are not
present in a JFET.
3. A JFET has a negative temperature co-efficient of
resistance. This avoids the risk of thermal runaway.
4. A JFET has a very high power gain. This eliminates the
necessity of using driver stages.
 5. A JFET has a smaller size, longer life and high efficiency

DEPLETION AND ENHANCEMENT TYPE

MOSFETs:
Basically there are two types of MOSFETs such as:

1. Depletion-type MOSFET or D-MOSFET: The D-MOSFET can be operated

in both depletion mode and the enhancement mode.
2. Enhancement-type MOSFET or E-MOSFET: The E-MOSFET can be
operated only in enhancement mode.

Basic construction of D-MOSFET

The below figure gives the construction details of n channel D-MOSFET

             Figure.1a. n-Channel D-MOSFET

A p-type region formed from Si base material called substrate which acts as
body for the MOSFET device. On this substrate a thin layer of N type silicon is
deposited just below the silicon dioxide (SiO2) gate−insulating layer, which
forms a conducting channel between source and drain.
The free electrons flowing from source(S) to drain(D) must pass through the
narrow channel between the gate and the p-type region (substrate).The
substrate (body) is connected to the source(S) internally so MOSFET has only
three terminals such as Source (S), Gate (G) and Drain(D).

We can apply either positive or negative voltage to the gate as it is insulated

from the channel, therefore, D-MOSFET can be operated in both depletion-
mode and enhancement-mode.

Basic Operation of D-MOSFET

Fig.3 shows the circuit of n-channel D-MOSFET.

                                           Fig.3

The gate forms a small capacitor. One plate of this capacitor is the gate and
the other plate is the channel with metal oxide layer as the dielectric, this
dielectric sets up opposing electric fields within the dielectric when exposed
to external field.

When gate voltage is changed, the electric field of the capacitor changes
which in turn changes the resistance of the n-channel.

The negative gate operation is called depletion mode and positive gate

operation is called enhancement mode.

Depletion mode:
The depletion MOSFET is similar to Enhancement type MOSFET except for the
difference as mentioned before; the channel exists even for zero gate to
source voltage.

  Fig.4a.depletion mode operation of n-channel D-MOSFET Fig.4b

Fig.4 shows depletion mode operation of n-channel D-MOSFET. In order to

control the conductivity of channel the gate terminal is reverse biased. Since
gate is negative, it means electrons are on the gate as shown in fig.4b.

These electrons repel the free electrons in the n-channel, leaving a layer of
positive ions in a part of the channel as shown in fig.4b. In other words, the
n-channel is depleted of some of its free electrons. Therefore, lesser number
of free electrons are available for conduction of current through the n-
channel. This is same as increasing the channel resistance.

The greater the negative voltage on the gate, the lesser is the current from
source to drain. Thus by changing the negative voltage on the gate, we can
vary the resistance of the n-channel and hence the current from source to
drain.

As the action with negative gate depends upon depleting the channel of free
electrons, the negative-gate operation is called depletion mode.

Characteristics of D-MOSFET

The drain and transfer characteristics of depletion MOSFET are similar

except for the inverse effect of gate voltage on drain current. In N-type
depletion mode MOSFET the control voltage Vgs is negative whereas in
Enhancement type MOSFET control voltage Vgs is positive.

  p-channel D-MOSFET
Fig.5 (i) shows the various parts of p-channel D-MOSFET.

                               Fig.5 (i)
The n-type substrate constricts the channel between the source and drain so
that only a small passage remains at the left side. The conduction takes
place by the flow of holes from source to drain through this narrow channel.

Fig. 5.3 Circuit Symbols for Depletion Mode MOSFETs

Notice the solid bar between source and drain, indicating the presence of a
conducting channel.

Note: Making the gate more negative reduces conduction between

source & drain In N channel devices, but increases conduction
between source & drain In P channel devices.

Points to note about D-MOSFET

1. In a D-MOSFET, the source to drain current is controlled by the electric

field of capacitor formed at the gate.
2. The gate of a D-MOSFET acts like a capacitor. For this reason it is
possible to operate D-MOSFET with positive or negative gate voltage.
3. As the gate of D-MOSFET forms a capacitor, therefore, negligible gate
current flows whether positive or negative voltage is applied to the gate.
For this reason, the input impedance of D-MOSFET is very high ranging
from 10,000 MΩ to 10,000,00 MΩ.
4. Characteristic of the D-MOSFET make it useful in high frequency
applications.
Enhancement mode:
 Fig.6 (i) shows enhancement mode operation of n-channel D-MOSFET.

                                    Fig.6 (i)                                                         Fig.6 (ii)

Again the gate acts like a capacitor. Since the gate is positive, it induces
negative charges in the n-channel as shown in fig.6 (ii).

These negative charges are the free electrons drawn into the channel.

Because these free electrons are added to those already in the channel, the
total number of free electrons in the channel is increased.

Thus a positive gate voltage enhances or increases the conductivity of the

channel.The greater the positive voltage on the gate, greater the conduction
from source to drain.

Thus by changing the positive voltage on the gate, we can change the
conductivity of the channel. Because the action with a positive gate depends
upon enhancing the conductivity of the channel, the positive gate operation
is called enhancement mode.

CHARACTERISTICS OF AN E-MOSFET.
Drain Characteristics-E-MOSFET

Drain characteristics of an N-channel E-MOSFET are shown in figure. The

lowest curve is the VGST curve. When VGS is lesser than VGST, ID is
approximately zero. When VGS is greater than VGST, the device turns- on and
the drain current ID is controlled by the gate voltage. The characteristic
curves have almost vertical and almost horizontal parts. The almost vertical
components of the curves correspond to the ohmic region, and the horizontal
components correspond to the constant current region. Thus E-MOSFET can
be operated in either of these regions i.e. it can be used as a variable-
voltage resistor (WR) or as a constant current source.

Transfer Characteristics of E-MOSFET

Figure shows a typical transconductance curve. The current IDSS at VGS
<=0 is very small, being of the order of a few nano-amperes. When the V GS is
made positive, the drain current ID increases slowly at first, and then much
more rapidly with an increase in VGS. The manufacturer sometimes indicates
the gate-source threshold voltage VGST at which the drain current ID attains
some defined small value, say 10 u A. A current ID (0N, corresponding
approximately to the maximum value given on the drain characteristics and
the values of VGS required to give this current VGs QN are also usually given on
the manufacturers data sheet.

The equation for the transfer characteristic does not obey equation. However
it does follow a similar “square law type”of relationship. The equation for the
transfer characteristic of E-MOSFETs is given as:

ID=K(VGS-VGST)2