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Microwave Detection of Electron-Phonon Interactions in A Cavity-Coupled Double Quantum Dot

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Microwave Detection of Electron-Phonon Interactions in A Cavity-Coupled Double Quantum Dot

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© © All Rights Reserved
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PHYSICAL REVIEW LETTERS 120, 097701 (2018)

Editors' Suggestion Featured in Physics

Microwave Detection of Electron-Phonon Interactions in a


Cavity-Coupled Double Quantum Dot
T. R. Hartke, Y.-Y. Liu, M. J. Gullans, and J. R. Petta
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
(Received 17 November 2017; published 27 February 2018)

Quantum confinement leads to the formation of discrete electronic states in quantum dots. Here we probe
electron-phonon interactions in a suspended InAs nanowire double quantum dot (DQD) that is electric-
dipole coupled to a microwave cavity. We apply a finite bias across the wire to drive a steady state
population in the DQD excited state, enabling a direct measurement of the electron-phonon coupling
strength at the DQD transition energy. The amplitude and phase response of the cavity field exhibit
oscillations that are periodic in the DQD energy level detuning due to the phonon modes of the nanowire.
The observed cavity phase shift is consistent with theory that predicts a renormalization of the cavity center
frequency by coupling to phonons.

DOI: 10.1103/PhysRevLett.120.097701

Phonons, the quantized lattice vibrations in a crystalline nanowire phonon spectral density should have observable
solid, are ubiquitous in condensed matter systems and consequences in the photon emission rate [25], although
impact the properties of bulk and nanostructured materials. this has not yet been observed. Here we measure the dc
For example, Raman scattering measurements provide a current I as a function of DQD energy level detuning ϵ and
detailed probe of the phonon density of states in carbon show that it exhibits periodic oscillations that are consistent
nanotubes [1], and it is now known that phonons limit the with the phonon spectral density in a confined nano-
maximum current in single nanotube devices [2–4]. structure [13,14]. Measurements of the cavity amplitude
Similarly, spin relaxation in semiconductors is generally and phase response reveal the detailed energy dependence
governed by processes that involve phonon emission [5–7]. of the electron-phonon coupling and exhibit a response that
Electronic relaxation processes involving phonons can even is periodic in ϵ. We employ a microscopic theoretical model
be harnessed to cool mechanical degrees of freedom in of the device that suggests that the dispersive cavity phase
nanostructures [8,9]. shift is due to a renormalization of the cavity center
Semiconductor double quantum dots (DQDs) are well- frequency by coupling to phonons [26].
suited for probing electron-phonon coupling [10–14] since The suspended nanowire DQD device is shown sche-
inelastic interdot tunneling generally involves the sponta- matically in Fig. 1(a). A 50 nm diameter InAs nanowire
neous emission of a phonon in order to conserve energy [15]. [27,28] is manually placed across two lithographically
Moreover, the DQD energy level difference is electrically defined Ti/Au pedestals using a long working distance
tunable, which allows the effective electron-phonon coupling optical microscope [16]. The pedestal thickness results in a
strength to be probed as a function of phonon energy. 15 nm vacuum gap between the nanowire and Ti/Au
Confinement can further influence phonon modes in nano- electrostatic back gates (green) (V LW , V L , V M , V R , V RW ),
structures, and new methods of controlled nanowire place- which are used to produce the double-well confinement
ment [16,17] may allow for careful engineering of the phonon potential. In contrast to earlier experiments [23,29], the back
spectrum in semiconductors, similar to recent optomechanics gates are not coated with SiNx dielectric. Instead, electrical
experiments with suspended carbon nanotubes [18–20]. isolation is achieved using the vacuum gap, which further
In this Letter, we investigate the interplay of electrons, confirms that the nanowire is physically suspended above
phonons, and photons in a cavity-coupled InAs nanowire the back gates. Ti/Au source (S) and drain (Cavity þ D)
DQD which is mechanically suspended in vacuum. The contacts (red), with a separation of 380 nm, are deposited on
interaction of photons and electrons in DQDs has been top of the pedestals. A scanning electron microscope (SEM)
studied extensively in the circuit QED architecture, where image of a representative device is shown in Fig. 1(b).
the charge dipole of a DQD is coupled to a microwave In order to study the interaction of electrons in the DQD
cavity [21–23]. A phonon sideband has recently been with photons in the cavity and phonons in the nanowire, the
observed in DQD masers that are driven by single electron DQD is electric-dipole coupled to the voltage antinode of a
tunneling [24], and a related theory suggests that the Nb superconducting transmission line resonator (Cavityþ
detailed energy-dependence of the one-dimensional D) with resonance frequency f c ¼ 7782.8 MHz and quality

0031-9007=18=120(9)=097701(5) 097701-1 © 2018 American Physical Society


PHYSICAL REVIEW LETTERS 120, 097701 (2018)
(a) (b)
We first measure the current through the DQD and search
for oscillations in IðϵÞ that are indicative of transitions
between discrete electronic states that are accompanied by
the emission of a phonon with energy ΩðϵÞ. To increase the
visibility of the current oscillations at this particular charge
(c) (d) transition we plot ∂ 2 I/ð∂V L ∂V R Þ as a function of V L and
V R in Fig. 2(b) over the same gate voltage range as
Fig. 2(a). These data reveal oscillations that are present
throughout the inelastic region ðϵ ≫ 0Þ of the finite bias
triangle. The oscillations are parallel to the interdot charge
transition axis (ϵ ¼ 0) and therefore occur at a constant
detuning, as expected for a decay mechanism that primarily
depends on ΩðϵÞ. Figure 2(c) shows that small oscillations
FIG. 1. (a) Schematic representation of the suspended InAs
are directly visible in IðϵÞ. A plot of dI/dϵ (inset) shows
nanowire DQD. (b) Tilted angle SEM image of the device.
(c) Energy level configuration of the DQD, which is placed inside that this current modulation has a periodic spacing of
a microwave cavity and probed by a weak microwave field. approximately 60 μeV which is consistent with expect-
(d) Optical image of the microwave cavity in (c) (upper panel), ations for the energy scale of phonons in the suspended
and tilted angle SEM image showing the electrical connection nanowire device (see the Supplemental Material [32])
between the drain contact of the DQD and the cavity centerpin and larger than the energy scale of cavity photons
(lower panel). The red box indicates the region shown in (b). (hfc ≈ 32 μeV). Current oscillations with a period of 60 
5 μeV were observed at more than 10 other charge
factor Q ∼ 3050 [24,30]. A schematic diagram illustrating transitions in the device, at forward and reverse bias [32].
the key elements of the device is shown in Fig. 1(c). The
electrical connection between the DQD and cavity is shown
in Fig. 1(d). Electron-phonon coupling is probed by meas- (a) (b)
uring the dc current through the DQD and the cavity
amplitude and phase response as a function of ϵ [31].
Measurements are performed in a dilution refrigerator with
a base temperature T ¼ 10 mK.
Figure 2(a) shows the current I through the device as a
function of the gate voltages V L and V R for V SD ¼ 2.5 mV.
Nonzero current is observed within finite bias triangles,
where the chemical potentials μD > μL > μR > μS . DQD
charge states are labeled by (N L , N R ), where N L (N R ) is the
number of electrons in the left (right) dot. We are able to (c)
reduce the electron number until no further charge transitions
are observed (see the Supplemental Material [32]), although
the data presented in this Letter are taken with N L ≈ N R ≈
4–6 to increase the current through the device and therefore
the number of photon emission events [33,34].
Early experiments on semiconductor DQDs showed that
energy is conserved during inelastic interdot tunneling
through the spontaneous emission of a phonon [15].
Measurements of the current as a function of level
detuning,pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
IðϵÞ, probe the environment at an energy
ΩðϵÞ ¼ ϵ2 þ 4t2c , where tc is the interdot tunnel cou- FIG. 2. (a) Current I through the DQD as a function of V L and
pling. Oscillations in IðϵÞ were attributed to electron V R with V SD ¼ 2.5 mV. The interdot level detuning ϵ is adjusted
phonon coupling [13–15]. In contrast with these previous along the white arrow. (b) Second derivative ∂ 2 I/ð∂V L ∂V R Þ of
the data in (a) show periodic oscillations as a function of ϵ. (c) I as
experiments, our DQD is electric-dipole coupled to a
a function of ϵ (red) accompanied by a simple theory prediction
cavity. Therefore, energy can be emitted during interdot (black) that accounts for phonon emission. In the theory curve,
tunneling by processes that involve the emission of both a we use the parameters: tc ¼ 22 μeV, Jð2tc /ℏÞ/2π ¼ 0.3 GHz,
phonon and a photon [33], as illustrated in Fig. 1(c). d ¼ 120 nm, ω0 /2π ¼ 130 GHz, cn ¼ 2100 m/s, r ¼ 4 × 10−3 ,
Because of these higher-order emission processes, we may ΓL /2π ¼ ΓR /2π ¼ 90 MHz and a nanowire temperature of
expect to see signatures of electron-phonon coupling in the 200 mK. Inset: dI/dϵ as a function of ϵ showing oscillations
amplitude and phase response of the cavity. with approximately 60 μeV periodicity in ϵ.

097701-2
PHYSICAL REVIEW LETTERS 120, 097701 (2018)
(a) (b)
To better understand the observed oscillations in the
current, we model the interaction of the DQD with the
lattice phonons using a spin-boson model [10,11,13]
ΩðϵÞ X X
H¼ σz þ ℏωk a†k ak þ ℏ λk σ x ðak þ a†k Þ; ð1Þ
2 k k

where σ z is the Pauli matrix acting on the two charge states


of the DQD, ωk is the dispersion of a phonon mode with
index k, λk is an electron-phonon interaction matrix
(c)
element, and ak are bosonic operators for the phonon
modes. A key quantity
P in this model is the phonon spectral
density JðνÞ ¼ k jλk j2 δðν − ωk Þ, which we approximate
by the contribution from the lowest energy longitudinally
polarized mode of the nanowire and a background term
arising from other phonon modes in the system [25]
J0 d 2
JðνÞ ¼ sin ðνd/cn Þe−ν /2ω0 þ Jb ðνÞ; ð2Þ
2 2

cn ν
νc
Jb ðνÞ ¼ rJ0 n ½1 − sincðνd/cn Þe−ν /2ω0 ; ð3Þ
2 2

d FIG. 3. (a) Cavity phase response Δϕ as a function of V L and


V R near the lower finite bias triangle. (b) Second derivative
where J0 is a constant scale factor, cn is the phonon speed
∂ 2 Δϕ/ð∂V L ∂V R Þ of the data in (a). (c) Δϕ and A/A0 as a function
of sound, d is the spacing between the dots, ω0 is a cutoff of detuning ϵ. Inset: Full range of data. The subset of data shown
frequency that scales with the size of each dot, and r scales in the main panel is outlined by the dashed grey box. A/A0 is
the relative contribution from the background. Numerical normalized to the value in Coulomb blockade.
values of the fit parameters are listed in the caption of
Fig. 2. From this idealized model, we see that the spectral
density exhibits oscillations with the phonon energy ℏν detuning axis as in Fig. 2(c). At positive detuning, clear
when the DQD spacing d is an integer multiple of the oscillations are visible in Δϕ with a period of approximately
phonon wavelength 2πcn /ν. This condition allows a simul- 60 μeV. Data are shown over a larger range of detuning in
taneous vibrational antinode at the position of each DQD the inset. The dip in transmission and large phase shift near
[10]. Including the tunneling to the left (right) lead at rate ϵ ¼ 0 are due to the dispersive interaction of the DQD and
ΓLðRÞ in the presence of a source-drain bias, we can derive cavity photons [23]. The second dip in transmission around
analytic expressions for the current through the dot (for ϵ ≈ 70 μeV may be due to a low lying excited state, although
details of the derivation, see Refs. [10,26]). As seen in the the energy scale is more consistent with the periodic
theory curve in Fig. 2(c), modulations in the phonon oscillations observed in I, A/A0 , and Δϕ. The features that
spectral density show up directly in the current because we observe at large detuning in A/A0 and Δϕ are also
the charge relaxation rate of the DQD two-level system is independent of small perturbations in the barrier gate
directly proportional to J½ΩðϵÞ/ℏ. voltage, V M , suggesting they are a robust consequence of
Going beyond previous experiments, we now report the coupling to the phonon bath.
observation of oscillations in the amplitude and phase It is helpful to search for correlations between the
response of the cavity that have the same 60 μeV periodicity oscillations observed in the current and the oscillations
as the oscillations observed in the current. The cavity observed in the cavity response. In general, the energy
transmission, A/A0 , and phase response, Δϕ, are investi- emitted into the environment during inelastic interdot
gated in Fig. 3 for the lower finite bias triangle of the same tunneling is given by the DQD energy splitting ΩðϵÞ.
interdot transition shown in Fig. 2. These measurements are Energy can be released into the environment by creating
performed by driving the cavity with an input tone at f c ¼ phonons and cavity photons. Previous experiments show
7782.8 MHz resulting in an intra-cavity photon number that roughly one photon is emitted into the cavity mode for
nc ≈ 50. The phase response of the cavity [Fig. 3(a)] exhibits every 103 –104 electron tunneling events [33]. Therefore the
oscillations that are once again periodic as a function of electronic current primarily probes the phonon environment
detuning (inset), and present throughout the finite bias and should scale as IðϵÞ/jej ∝ J½ΩðϵÞ/ℏ. In contrast,
triangle, suggesting they are caused by an energy-dependent second order processes, where a cavity photon and phonon
decay mechanism. These features are more clearly visible in are emitted during inelastic tunneling, scale with the
∂ 2 Δϕ/ð∂V L ∂V R Þ [Fig. 3(b)]. Figure 3(c) shows A/A0 and phonon spectral density JðνÞ as J½ΩðϵÞ/ℏ − 2πf c . These
Δϕ as a function of detuning ϵ, measured along the same processes are illustrated in the inset of Fig. 4(a). For the

097701-3
PHYSICAL REVIEW LETTERS 120, 097701 (2018)
(a) (b)
Future work on suspended nanowires could explore the
dependence of the phonon periodicity on the source-drain
electrode spacing. Such experiments could help to resolve
the conflicting interpretations of the cause of this periodicity
in Refs. [13,14]. More broadly, the principles of phonon
spectrum engineering and measurement suggested by this
work may help to minimize electron-phonon interaction
processes at specific energies. For example, single spin
relaxation times in III/V semiconductor quantum dots
[36,37] are due to spin-orbit coupling and phonon emission
[5,7,38]. By tailoring the phonon spectrum, it may be feasible
FIG. 4. (a) A comparison of IðϵÞ and Aðϵ þ hf c Þ/A0 . Inset: to extend electron spin lifetimes in quantum devices [39].
DQD energy level diagram showing the first order emission of a
In summary, we have shown that it is possible to create a
phonon (blue) or the second order emission of the same phonon
and a photon (green) of energy hf c, which occurs when ϵ cavity-coupled InAs nanowire DQD that is mechanically
increases by approximately hf c. (b) Δϕ as a function of ϵ (red) suspended above the substrate. Consistent with earlier
and theory fit (black). The theory curve takes into account the work, we observe oscillations in the inelastic current as
dispersive cavity shift (inset) that is caused by the coupling of a function of level detuning due to electron-phonon
cavity photons to nanowire phonon modes. These data, and the coupling in the nanowire [13,14]. Measurements of the
Fig. 2(c) data, are simultaneously fit. cavity response are also sensitive to electron-phonon
coupling. We couple the electronic dipole moment of an
large level detunings examined here, jϵj ≫ tc , and Ω ≈ ϵ. electron trapped in this DQD to the electric field of a
As such, there should be a correlation between the microwave cavity and observe a periodic cavity phase
measured current IðϵÞ and cavity response Aðϵ þ hfc Þ/A0 . response due to a dispersive interaction with nanowire
Figure 4(a) plots IðϵÞ and Aðϵ þ hfc Þ/A0 . The y-axes phonons. A comparison of these measurements with a
offsets and data ranges have been adjusted such as to microscopic theoretical model of the device suggests that
maximize overlap between the two distinct data sets. For the coupling of phonons to photons, mediated by electron
ϵ > 0.1 meV there is a strong correlation between IðϵÞ and dynamics, results in a phonon renormalization of the cavity
Aðϵ þ hfc Þ/A0 . Both data sets have a very similar inelastic center frequency. These experiments broadly help to under-
tail. Moreover, the oscillations in IðϵÞ occur at the same stand the fundamental nature of electron-phonon coupling
values of detuning as the oscillations in Aðϵ þ hfc Þ/A0 . in nanoscale systems and may provide a path toward
These data give further evidence that the oscillations in the mitigating spin decay in semiconductor quantum devices.
current and cavity response are due to the same electron- Supported by the Packard Foundation, the Gordon and
phonon coupling mechanism. Betty Moore Foundation’s EPiQS Initiative through Grant
The cavity phase response can be modeled using a theory No. GBMF4535, and NSF Grants No. DMR-1409556 and
that takes into account the dispersive shift of the cavity No. DMR-1420541. Devices were fabricated in the
(renormalization of the cavity frequency) due to the Princeton University Quantum Device Nanofabrication
DQD-mediated coupling to nanowire phonons [26]. Laboratory.
Measurements of Δϕ and best fits to the microscopic
theory are shown in Fig. 4(b). The theoretical predictions
for the dispersive cavity shift due to electron-phonon
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