EE 321 Analog Electronics, Fall 2013

Homework #8 solution
5.110. The following table summarizes some of the basic attributes of a number of
BJTs of different types, operating as amplifiers under various conditions. Provide
the missing entries.

I will just provide the explicit equations for the first column, (a):
α
β=
1−α
IC
IE =
α
IC
IB =
β
IC
gm =
VT
α
re =
gm
β
rπ =
gm
Transistor a b c d e f g
α 1.000 0.99 0.98 1 0.99 0.9 0.984
β ∞ 100 50 ∞ 100 9 62.8
IC (mA) 1.00 0.99 1.00 1 0.25 4.5 69.1
IE (mA) 1.00 1.00 1.02 1 0.253 5 70.2
IB (mA) 0 0.0099 0.02 0 0.0025 0.5 1.10
gm (mA/V) 40 39.6 40 40 9.9 180 700
re (Ω) 25 25 24.5 25 100 5 1.41
rπ (Ω) ∞ 2530 1250 ∞ 10.1K 50 89.7
5.114. A biased BJT operates as a grounded-emitter amplifier between a signal
source, with a source resistance of 10 kΩ, connected to the base and a 10 kΩ

1
load connected as a collector resistance RC . In the corresponding model, gm is
40 mA/V and rπ is 2.5 kΩ. Draw the complete amplifier model using the hybrid-
π BJT equivalent circuit. Calculate the overall voltage gain vc /vs . What is the
value of BJT β implied by the values of the model parameters? To what value
must β be increased to double the overall voltage gain?

vs Rs vc

Rc
Rp

rπ 2.5
vo = −gm RC vi = −gm RC vs = −0.04 × 10 × 103 × = −80
Rs + rπ 10 + 2.5
The value of β can be found from
β
rπ =
gm
or

β = rπ gm = 2.5 × 103 × 0.04 = 100

To double the gain we would want to double the factor
rπ
Rs + rπ
It is currently equal to
2.5
= 0.2
10 + 2.5
To double it we would need to change rπ :
rπ
= 0.4
Rs + rπ
0.4
rπ = Rs = 0.67Rs = 6.7 kΩ
0.6
The factor increase in β is the same as the factor increase in rπ :
rπ new 6.7
βnew = βold
= 100 × = 268
rπ old 2.5
5.115. For the circuit shown in Fig. P5.115, draw a complete small-signal equiv-
alent circuit utilizing an appropriate T model for the BJT (use α = 0.99). Your

2
circuit should show the values of all components, including the model parame-
ters. What is the input resistance Rin ? Calculate the overall gain vo /vsig .

Here is the small-signal equivalent

Rc RL

re

Rsig

where
The overall voltage can be found from

vo = − (RC ||RL ) ic

ic = αie

vsig
ie = −
Rsig + re
so

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 vo 1
= (RC ||RL ) α
vsig Rsig + re
1
= (10||10) 0.99
50 + 50
=49.5

5.128. A common-emitter amplifier of the type shown in Fig 5.60(a) is biased to

operate at IC = 0.2 mA and has a collector resistance RC = 24 kΩ. The transistor
has β = 100 and a large VA . The signal source is directly coupled to the base and
Cc1 and RB are eliminated. Find Rin , the voltage gain Avo , and Ro . Use these
results to determine the overall voltage gain when a 10 kΩ resistor is connected
to the collector and the source resistance Rsig = 10 kΩ.

This is a common-emitter amplifier with RB = ∞, so the input resistance is

βVT 100 × 25
Rin = rπ = = = 12.5 kΩ
IC 0.2
IC 0.2
Avo = −gm RC = − RC = − 10 × 103 = −80
VT 25

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 RO = RC = 10 kΩ
The overall voltage gain, vo /vsig is then

vo rπ RL
Gv = = Avo
vsig Rsig + rπ RL + RO
12.5 10
= (−80)
10 + 12.5 10 + 10
= − 22.2

5.130. For the common-emitter amplifier shown in Figure P5.130, let VCC = 9 V,
R1 = 27 kΩ, R2 = 15 kΩ, RE = 1.2 kΩ, and RC = 2.2 kΩ. The transistor has
β = 100, and VA = 100 V. Calculate the dc bias current IE . If the amplifier
operates between a source for which Rsig = 10 kΩ and a load of 2 kΩ, replace the
transistor with its bybrid-π model, and find the values of Rin , the voltage gain
vo /vsig , and the current gain io /ii .

We have

VB = (i1 − iB ) R2 VB = VBE + (β + 1) RE iB VB = VCC − i1 R1

and we can eliminate iD and iB from the first equation.
 
VCC − VB VB − VBE
VB = − R2
R1 (β + 1) RE
 
R2 R2 R2 R2
VB 1 + + = VCC + VBE
R1 (β + 1) RE R1 (β + 1) RE

VCC R2
R1
R2
+ VBE (β+1)RE
9× 15
27
+ 0.7 × 15
101×1.2
VB = R2 R2
= 15 15 = 3.03 V
1+ R1
+ (β+1)RE
1+ 27
+ 101×1.2

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Note that for (β + 1) RE ≫ R2 and VCC ≫ VBE the expression for VB reduces to the voltage
divider expression,
R2
R1 R2 15
VB = VCC R2
= VCC = 9× = 3.21 V
1+ R1
R1 + R2 15 + 27
I will proceed with the result from the fully correct expression. Next, the emitter current is
VE VB − VBE 3.03 − 0.7
=
IE = = = 1.94 mA
RE RE 1.2
The small-signal model looks like this
ii io
vo
Rs

vs R1 R2 Rp ro Rc RL

The input resistance is

Rin = R1 ||R2 ||rπ

where

β βVT βVT (β + 1) VT 101 × 25

rπ = = = = = = 1302 Ω
gm IC αIE IE 1.94
such that

Rin = R1 ||R2 ||rπ = 27||15||1.302 = 1.15 kΩ

The voltage gain is

Rin Rin Rin βIE

Gv = − Av = − gm (RC ||ro||RL ) = − (RC ||ro ||RL )
Rin + Rs Rin + Rs Rin + Rs (β + 1) VT

where

VA VA (β + 1) VA 101 × 100
ro = = = = = 52.1 kΩ
IC αIE βIE 100 × 1.94 × 10−3
and then

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 Rin βIE
Gv = − (RC ||ro ||RL )
Rin + Rs (β + 1) VT
1.14 100 × 1.94
=− (2.2||52.1||2)
1.14 + 10 101 × 25
= − 8.07

5.131. Using the topology of Fig. P5.130, design an amplifier to operate between
a 10 kΩ source and a 2 kΩ load with a gain vo /vsig of −8. The power supply
available is 9 V. Use an emitter current of approximately 2 mA and a current of
about one-tenth of that in the voltage divider that feeds tbe base, with the dc
voltage at the base about one third of the supply. The transistor available has
β = 100 and VA = 100 V. Use standard 5% resistors (See Appendix G)
This is the same circuit as before, except choose the nearest 5% resistors. In that case choose
R1 = 27 kΩ, R2 = 15 kΩ, RE = 1.2 kΩ, RC = 2.2 kΩ. Well, it turns out the problem is
identical to P5.130. That was easy.