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This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. Key details include: 1) It can be used for applications like charge sensors, meter amplifiers, electronic switches, and gain controllers. 2) Absolute maximum ratings include gate to drain voltage of -50V, gate current of 10mA, and allowable power dissipation of 250mW. 3) Electrical characteristics include drain to source cut-off current of 0.3-6.5mA, gate to source cut-off voltage of -0.4 to -5.0V, and input capacitance of 8.2pF. 4) Devices are

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Joel Palza
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479 views

2sk30a PDF

This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. Key details include: 1) It can be used for applications like charge sensors, meter amplifiers, electronic switches, and gain controllers. 2) Absolute maximum ratings include gate to drain voltage of -50V, gate current of 10mA, and allowable power dissipation of 250mW. 3) Electrical characteristics include drain to source cut-off current of 0.3-6.5mA, gate to source cut-off voltage of -0.4 to -5.0V, and input capacitance of 8.2pF. 4) Devices are

Uploaded by

Joel Palza
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Silicon Junction FETs XIAOSHENG

Symbol:
Drain
LH03 Series of Products interconvert:

www.datasheet4u.com
2SK30A Gate
Source

Silicon N-Chinnel Junction FET


Package example:
„ Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC ，electronic switch.

„ Absolute Maximum Ratings (Ta=25℃)


Parameter Symbol Ratings Unit
Gate to Drain voltage VGDO -50 V Package D S G
Gate to Source voltage VGSO -50 V SC-59
Gate current IG 10 mA SOT-23

Allowable power dissipation TO-92S


PD 250 mW
Junction Temperature Tj 125 ℃ * TO-92 3 1 2
Storage Temperature TO-18
Tstg -55 to +125 ℃

„ Electrical Characteristics (Ta=25℃)


Prameter Symbol Conditions min typ max Unit
Drain to Source cut-off current IDSS VDS = 10V, VGS = 0V 0.3 6.5 mA
Gate to Source leakage current IGSS VGS= -30V, VDS = 0V -1.0 nA
Gate to Drain voltage VGDS IG = -100μA，VDS = 0V -50 V
Gate to Source cut-off voltage VGS(OFF) VDS = 10V, ID = 0.1μA -0.4 -5.0 V
Forward transfer admittamce | Yfs | VDS= 10V，VGS= 0V，f = 1KHZ 1.2 mS
Input capacitance (Common Source) Ciss 8.2 pF
VDS= 10V，VGS= 0V，f = 1MHZ
Reverse transfer capacitance (Common Source) Crss 2.6 pF

„ IDSS Rank Classification


Runk R O Y GR
IDSS(mA) 0.3 to 0.75 0.6 to 1.4 1.2 to 3.0 2.6 to 6.5
Marking Symbol 035D 035E 035F 035G

Xiaosheng Electronic & Telechnology CO. ,LTD.


Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:[email protected]
Room 206 3rd building 195-16 Tianlin RD. Shanghai China

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