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MCQ Nano Science and FE

The document contains 30 multiple choice questions about nano science topics including Fermi energy level, Fermi-Dirac statistics, free electron gas theory, bandgap of semiconductors, effective mass, electronic bands, dopants, and the Hall effect. The questions test understanding of key concepts in these areas and provide explanations for the answers.

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Jamilur Rahman
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100% found this document useful (3 votes)
9K views6 pages

MCQ Nano Science and FE

The document contains 30 multiple choice questions about nano science topics including Fermi energy level, Fermi-Dirac statistics, free electron gas theory, bandgap of semiconductors, effective mass, electronic bands, dopants, and the Hall effect. The questions test understanding of key concepts in these areas and provide explanations for the answers.

Uploaded by

Jamilur Rahman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Multiple Choice Questions on Nano Science

By J.R.Ansari, Ph.D., PDM University

MCQ
1. Fermi energy level
(a) is the top most filled energy level at 0K temperature
(b) is the top most filled energy level at 00C temperature
(c) separates valance band and conduction band
(d) none of the above

Ans: a and c

2. Which of the following is true regarding the position of Fermi level?


(a) lies exactly in the middle between the bottom of the conduction band
and top of the valance band in an intrinsic semiconductor
(b) nearer to the conduction band in N-type semiconductor
(c) nearer to the valance band in P-type semiconductor
(d) all the above.

Ans: d

3. Fermi-Dirac statistics explains


(a) how electrons are distributed among different energy levels
(b) the probability of an energy level to be occupied by electrons
(c) the probability of an energy level to be occupied by quantum mechanical
particles
(d) how quantum mechanical particles are distributed in different energy
level.

Ans: All are correct

4. Fermi-Dirac (FD) statistics governs


(a) fermions
(b) free electrons
(c) gas molecules
(d) All the above
Ans: a and b

5. In free electron gas theory, electrons


(a) can move anywhere inside the metal.
(b) are considered as a gas.
(c) pairs with holes and become neutral.
(d) All the above.

Ans: a and b

6. Which of the following can be explained by using free electron theory


(a) copper
(b) Gold
(c) Silver
(d) Sodium

Ans: All are correct since all are metals which contain free electrons

7. Free electron theory gas is applicable to


(a) metals
(b) gas
(c) solids
(d) all the above.

Ans: a and c. a is a more accurate answer

8. Free electron gas theory assumes


(a) electrons are free from Coulomb force
(b) the Coulomb force of repulsion is negligible.
(c) Electrons are free to move anywhere.
(d) All the above.

Ans: b. Electrons are free to move inside the metal only

9. For a semiconductor-based light source, it should be a


(a) direct bandgap semiconductor
(b) indirect direct bandgap semiconductor
(c) either direct bandgap or indirect bandgap
(d) the semiconductor can not be used as a light source

Ans: a

10. In an indirect bandgap semiconductor, a transition between


conduction
band and valance band results in
(a) heat
(b) light
(c) both
(d) none of the above.

Ans: a

11. In a direct bandgap semiconductor


(a) The two points of intersection of a vertical line with the E-K curve of
both valance band and conduction band are at the same momentum.
(b) The two points of intersection of a vertical line with the E-K curve of both
valance band and conduction band are having the same wave vector.
(c) The K value of the lowest point of the conduction band is equal to the K
value of highest point of valance band.
(d) The transitions of electrons take place directly.

Ans: All are correct.

12. Which of the following is true?


(a) In an indirect bandgap semiconductor, emission of photons is not
possible
(b) In a direct bandgap semiconductor emission of both light and heat
is possible.

Ans: b. Option a is not true. The emission of photons is possible with less
probability.

13. In an indirect bandgap semiconductor, emission of light does not


occur
because of the fact that
(a) momentum is not conserved in case of direct transition
(b) electrons are trapped in defects before making the transition.

Ans: a and b

14. Which of the following is an indirect bandgap semiconductor?


(a) silica
(b) germanium
(c) carbon
(d) all the above.

Ans: d

15. Which of the following is a radiative semiconductor


(a) Silica
(b) Gallium Arsenide
(c) Germanium
(d) None of the above

Ans: b. The radiative semiconductor is the one that emits light.

16. Diffusion current occurs due to


(a) charge density gradient
(b) electric field
(c) nonuniform distribution of electron and holes
(d) all the above

Ans: a and c. option b is drift current.

17. The shape of E-K diagram of the conduction band and valance band is
(a) horizontal
(b) vertical
(c) parabolic
(d) none of the above.

Ans: c

18. The curvature of E-K diagram


(a) is higher in conduction band than valance band
(b) is lower in valence band than the conduction band
(c) is negative in the conduction band
(d) b and c

Ans: a and b. Curvature is negative in the valance band.

19. The symbol K in Fermi energy represents


(a) Maxwell-Boltzmann constant
(b) Boltzmann constant
(c) Wave vector
(d) None of the above.

Ans: b. K is a wave vector or propagation constant in the wave function.

20. Hertz is the unit of


(a) frequency of ultrasound
(b) frequency of AC
(c) frequency of waves
(d) all the above.

Ans: d
21. The effective mass of a charge carrier
(a) is directly proportional to the curvature of E-K curve
(b) is inversely proportional to the curvature of E-K curve
(c) is positive near the bottom of the conduction band
(d) is negative near the top of the valance band

Ans: b, c, d. The effective mass may be positive or negative according to the


sign of curvature. The curvature may be positive or negative in both the
conduction band and the valance band.

22. Electronic bands are formed due to


(a) split-up of energy levels
(b) to satisfy Pauli’s exclusion principle
(c) The shift in energy levels
(d) All the above

Ans: a and b

23. An electronic band is


(a) Any range of energy levels
(b) Energy levels where free electrons exist
(c) A range of energy level is characterized by the existence of
electrons.
(d) All the above.

Ans: c

24. The interaction of different atoms leads to the formation of


(a) electronic band
(b) electronic bond
(c) none of the above
(d) all the above

Ans: a and b

25. A forbidden band


(a) is the one where electrons are forbidden
(b) is the one where energy is forbidden
(c) is not there in between the conduction and valence band in conductors
(d) all the above.

Ans: a and c

26. Current flow is in the direction of


(a) electric field
(b) opposite to the flow of electrons
(c) flow of holes
(d) all the above.

Ans: d

27. Dopant for N-type semiconductor


(a) should be a pentavalent impurity
(b) should be a trivalent impurity
(c) either a or b
(d) depends on the number of valance electrons in the host atom

Ans: a

28. Hall voltage is developed due to the


(a) change in the magnetic field
(b) change in the electric field
(c) polarization of charges
(d) none of the above.

Ans: c

29. In the Hall effect, electrons experience


(a) electrostatic force
(b) magnetic force
(c) Lorentz force
(d) all the above

Ans: c

30. The force acting on moving electrons due to a perpendicular magnetic


the field is in the direction
(a) parallel to the magnetic field
(b) perpendicular to the magnetic field and parallel to the direction of electrons
(c) perpendicular to the direction of electrons and parallel to the magnetic field
(d) Opposite to the magnetic field.

Ans: All are wrong. Perpendicular to both electric and magnetic field

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