Modern Physics Dr:Yahia Elbashar ENG:Doaa Mohamed NAME:Abdallah Ibrahim Abdrabo ID:18194141
Modern Physics Dr:Yahia Elbashar ENG:Doaa Mohamed NAME:Abdallah Ibrahim Abdrabo ID:18194141
Dr:Yahia Elbashar
ENG:Doaa Mohamed
Now this equation came straight from substituting the plane wave
equation for a photon into the wave equation. However, since we
now want the energy to solve the total relativistic energy for a
particle with mass, we need to change the wave equation slightly.
This is because the wave equation shouldn’t fully apply to our new
which describes particles and waves. We can now backsolve for an
operator to get the equation above, and it’s given by
Solving for Particles with Mass in the Wave Equation
When is small, the only part that remains in the Taylor expansion is
the term. In our energy formula, . We can take
advantage of the fact that for anything that isn’t
travelling at the speed of light (please find me if you do find anything
that doesn’t satisfy this)! So this term actually reduces to:
Now we can easily generalise this to 3-dimensions by turning this
equation into a vector equation (all the steps we took to derive this
formula will apply for all and .)
Let’s put in our new wave function given by
where we know what the first and second derivatives with respect to
time look like:
2-Quantum theory of free electrons in metal
As per energy band theory (refer to the article “Energy Bands in Crystals” for more information), these are the
number of electrons which constitute the conduction band of the material considered. Thus inorder to have an
idea over the conduction mechanism, it is necessary to know the concentration of the carriers in the
conduction band.
Now, let us try to understand the meaning of Fermi level. In order to accomplish this, pu
Fermi Level in Semiconductors
Intrinsic semiconductors are the pure semiconductors which have no impurities in them. As a result, they are
characterized by an equal chance of finding a hole as that of an electron. This inturn implies that they have the
Fermi-level exactly in between the conduction and the valence bands as shown by Figure 1a
Next, consider the case of an n-type semiconductor. Here, one can expect more number of electrons to be
present in comparison to the holes. This means that there is a greater chance of finding an electron near to the
conduction band than that of finding a hole in the valence band. Thus, these materials have their Fermi-level
located nearer to conduction band as shown by Figure 1b.
Following on the same grounds, one can expect the Fermi-level in the case of p-type semiconductors to be
present near the valence band (Figure 1c). This is because, these materials lack electrons i.e. they have more
number of holes which makes the probability of finding a hole in the valence band more in comparison to that
of finding an electron in the conduction band.
At T = 0 K, the electrons will have low energy and thus occupy lower energy states. The highest energy state
among these occupied states is referred to as Fermi-level. This inturn means that no energy states which lie
above the Fermi-level are occupied by electrons. Thus we have a step function defining the Fermi-Dirac
distribution function as shown by the black curve in Figure 2.
However as the temperature increases, the electrons gain more and more energy due to which they can even
rise to the conduction band. Thus at higher temperatures, one cannot clearly distinguish between the occupied
and the unoccupied states as indicated by the blue and the red curves shown in Figure 2