VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3

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Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
FEATURES
common • 150 °C TJ operation
cathode
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
Anode 2 Anode
1 Common 3 and moisture resistance
TO-220AB
cathode • Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package TO-220AB
• Halogen-free according to IEC 61249-2-21 definition
IF(AV) 2 x 15 A (-N3 only)
VR 25 V, 30 V
VF at IF 0.40 V
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
IRM max. 97 mA at 125 °C
optimized for low reverse leakage at high temperature. The
TJ max. 150 °C proprietary barrier technology allows for reliable operation up
Diode variation Common cathode to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
EAS 13 mJ
and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 30 A
VRRM 25/30 V
IFSM tp = 5 μs sine 900 A
VF 15 Apk, TJ = 125 °C 0.40 V
TJ Range - 55 to 150 °C

VOLTAGE RATINGS
PARAMETER SYMBOL VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3 UNITS
Maximum DC reverse voltage VR
25 25 30 30 V
Maximum working peak reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
IF(AV) 50 % duty cycle at TC = 115 °C, rectangular waveform 30
See fig. 5
Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated load 900 A
non-repetitive surge current IFSM condition and with rated
See fig. 7 10 ms sine or 6 ms rect. pulse VRRM applied 250

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH 13 mJ

Current decaying linearly to zero in 1 μs
Repetitive avalanche current IAR 3 A
Frequency limited by TJ maximum VA = 1.5 x VR typical

Revision: 11-Oct-11 1 Document Number: 94202

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
This datasheet has been downloaded from http://www.digchip.com at this page
 VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
15 A 0.49
TJ = 25 °C
Maximum forward voltage drop 30 A 0.58
VFM (1) V
See fig. 1 15 A 0.40
TJ = 125 °C
30 A 0.53
Maximum reverse leakage current TJ = 25 °C 1.75
IRM (1) VR = Rated VR mA
See fig. 2 TJ = 125 °C 97
Threshold voltage VF(TO) 0.233 V
TJ = TJ maximum
Forward slope resistance rt 9.09 m
Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1300 pF
Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
TJ, TStg - 55 to 150 °C
temperature range
Maximum thermal resistance, DC operation
RthJC 3.25
junction to case per leg See fig. 4
°C/W
Typical thermal resistance,
RthCS Mounting surface, smooth and greased 0.50
case to heatsink
2 g
Approximate weight
0.07 oz.
minimum 6 (5) kgf · cm
Mounting torque
maximum 12 (10) (lbf · in)
32CTQ025
Marking device Case style TO-220AB
32CTQ030

Revision: 11-Oct-11 2 Document Number: 94202

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
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Vishay Semiconductors

1000
IF - Instantaneous Forward Current (A)

1000

TJ = 150 °C

IR - Reverse Current (mA)

100
TJ = 125 °C
100 10
TJ = 100 °C

1 TJ = 75 °C
TJ = 150 °C
TJ = 125 °C
10 TJ = 25 °C 0.1
TJ = 50 °C

0.01 TJ = 25 °C

1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30

VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage

10 000
CT - Junction Capacitance (pF)

1000
TJ = 25 °C

100
0 5 10 15 20 25 30 35

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10
ZthJC - Thermal Impedance (°C/W)

D = 0.75
D = 0.50 PDM
0.1 D = 0.33
D = 0.25 t1
D = 0.20
Single pulse t2
0.01 (thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Revision: 11-Oct-11 3 Document Number: 94202

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
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Vishay Semiconductors

160 10
Allowable Case Temperature (°C)

D = 0.20
150 D = 0.25

Average Power Loss (W)

8 D = 0.33
140
D = 0.50
DC
130 D = 0.75
6
RMS limit
120
Square wave (D = 0.50)
110 80 % rated VR applied 4

100 DC
2
90 See note (1)
80 0
0 5 10 15 20 25 0 5 10 15 20 25

IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs. Average Fig. 6 - Forward Power Loss Characteristics
Forward Current
IFSM - Non-Repetitive Surge Current (A)

1000

At any rated load condition

and with rated VRRM applied
following surge

100
10 100 1000 10 000

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current

High-speed
IRFP460 switch
D.U.T.

Rg = 25 Ω Freewheel
diode + Vd = 25 V
Current
monitor 40HFL40S02

Fig. 8 - Unclamped Inductive Test Circuit

Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

Revision: 11-Oct-11 4 Document Number: 94202

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
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Vishay Semiconductors
ORDERING INFORMATION TABLE

Device code VS- 32 C T Q 030 PbF

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

2 - Current rating (30 A)
3 - Circuit configuration:
C = Common cathode
4 - Package:
T = TO-220
5 - Schottky “Q” series
025 = 25 V
6 - Voltage ratings 030 = 30 V
7 - Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-32CTQ025PbF 50 1000 Antistatic plastic tube
VS-32CTQ025-N3 50 1000 Antistatic plastic tube
VS-32CTQ030PbF 50 1000 Antistatic plastic tube
VS-32CTQ030-N3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95222
TO-220AB PbF www.vishay.com/doc?95225
Part marking information
TO-220AB -N3 www.vishay.com/doc?95028

Revision: 11-Oct-11 5 Document Number: 94202

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

TO-220AB

DIMENSIONS in millimeters and inches

B
(6) A Seating
E plane Thermal pad
ØP A
A (E)
E2 (7) 0.014 M B A M
A1
Q 1 2 3
(6) (H1) D D
H1 L1 (2)
(7) C C
D2 (6)
(6) D Detail B

D1
3xb 3 x b2
1 2 3
Detail B
C
E1 (6)

Base metal (b, b2) Plating

View A - A c c1 (4)
c A
2x e
A2 (4)
e1 b1, b3
0.015 M B A M Section C - C and D - D
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038
4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068
4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022
4 ØP 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600
3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (7) Dimensions E2 x H1 define a zone where stamping and
(2) Lead dimension and finish uncontrolled in L1 singulation irregularities are allowed
(3) Dimension D, D1 and E do not include mold flash. Mold flash (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
shall not exceed 0.127 mm (0.005") per side. These dimensions D2 (minimum) where dimensions are derived from the actual
are measured at the outermost extremes of the plastic body package outline
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1

Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 [email protected], [email protected], [email protected] 1
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