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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SC3866 silicon NPN power transistor. It includes descriptions of the TO-220Fa package, high speed switching and high voltage capabilities. Application areas are listed as switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers. Absolute maximum ratings, thermal characteristics, electrical characteristics, switching times, and package outline are specified.

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javier mora
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37 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SC3866 silicon NPN power transistor. It includes descriptions of the TO-220Fa package, high speed switching and high voltage capabilities. Application areas are listed as switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers. Absolute maximum ratings, thermal characteristics, electrical characteristics, switching times, and package outline are specified.

Uploaded by

javier mora
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3866

DESCRIPTION
·With TO-220Fa package
·High speed switching
·High voltage
·High reliability

APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 10 V

IC Collector current 3 A

IB Base current 1 A

PC Collector power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Rth j-C Thermal resistance junction case 3.0 /W
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3866

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 800 V

V(BR)CBO Collector-base breakdown voltage IC=1mA , IE=0 900 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA , IC=0 10 V

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V

VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V

ICBO Collector cut-off current VCB=900V; IE=0 1.0 mA

IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA

hFE DC current gain IC=1A ; VCE=5V 10

Switching times

ton Turn-on time 1.0 µs

IC=2A; IB1=0.4A
ts Storage time IB2=-0.8A;RL=150A 4.0 µs
Pw=20µs,DutyB2%

tf Fall time 0.8 µs

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3866

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3866

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