SMD Type MOSFET

P-Channel MOSFET
AO4441 (KO4441)

SOP-8

■ Features
● VDS (V) =-60V
● ID =-4 A (VGS =-10V)
● RDS(ON) ＜ 100mΩ (VGS =-10V) 1.50 0.15

● RDS(ON) ＜ 130mΩ (VGS =-4.5V)

+0.04
0.21 -0.02
1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
4 Gate 8 Drain

G
S

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS -60
V
Gate-Source Voltage VGS ±20
TA=25°C -4
Continuous Drain Current ID
TA=70°C -3.1 A
Pulsed Drain Current IDM -20
TA=25°C 3.1
Power Dissipation PD W
TA=70°C 2
t ≤ 10s 40
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 75 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 30
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

P-Channel MOSFET
AO4441 (KO4441)
■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V
VDS=-48V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-48V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1 -3 V
VGS=-10V, ID=-4A 100
Static Drain-Source On-Resistance RDS(On) VGS=-10V, ID=-4A TJ=125℃ 130 mΩ
VGS=-4.5V, ID=-3A 130
On state drain current ID(ON) VGS=-10V, VDS=-5V -20 A
Forward Transconductance gFS VDS=-5V, ID=-4A 10 S
Input Capacitance Ciss 930 1120
Output Capacitance Coss VGS=0V, VDS=-30V, f=1MHz 85 pF
Reverse Transfer Capacitance Crss 35
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 7.2 9 Ω
Total Gate Charge (10V) 16 20
Qg
Total Gate Charge (4.5V) 8 10
VGS=-10V, VDS=-30V, ID=-4A nC
Gate Source Charge Qgs 2.5
Gate Drain Charge Qgd 3.2
Turn-On DelayTime td(on) 8
Turn-On Rise Time tr VGS=-10V, VDS=-30V, RL=7.5Ω, 3.8
Turn-Off DelayTime td(off) RGEN=3Ω 31.5 ns
Turn-Off Fall Time tf 7.5
Body Diode Reverse Recovery Time trr 27 35
IF=-4A, dI/dt=100A/us
Body Diode Reverse Recovery Charge Qrr 32 nC
Maximum Body-Diode Continuous Current IS -4 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

Note :The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.

■ Marking
4441
Marking
KC****

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 SMD Type MOSFET

P-Channel MOSFET
AO4441 (KO4441)
■ Typical Characterisitics
20 10

-10V -4.5V V DS =-5V

-5.0V 8
15 -4.0V
-6.0V

6
-ID (A)

-ID(A)
10
-3.5V
4
125°C
5
V GS =-3.0V 2
25°C

0
0
0 1 2 3 4 5
1 1.5 2 2.5 3 3.5 4
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

110 2

V GS =-4.5V
Normalized On-Resistance

1.8 V GS =-10V
100 ID =-4A
1.6
RDS(ON) (mΩ)

1.4 V GS =-4.5V
90
ID =-3A
ID =-3A
1.2

80 V GS =-10V
1

0.8
70 0 25 50 75 100 125 150 175
0 2 4 6 8 10
Temperature (°C)
-ID (A) Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and Temperature
Gate Voltage

200 1.0E+01
ID =-4A
180 1.0E+00

160 125°C 125°C

1.0E-01
RDS(ON) (mΩ)

140 1.0E-02
-IS (A)

120
1.0E-03
100
1.0E-04
25°C
80 25°C
1.0E-05
60
2 4 6 8 10 1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

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 SMD Type MOSFET

P-Channel MOSFET
AO4441 (KO4441)
■ Typical Characterisitics
10 1500
V DS =-30V
ID =-4A
8
C iss

Capacitance (pF)
1000
-VGS (Volts)

4
500
2 C oss C rss

0
0
0 10 20
0 10 20 30 40 50 60
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics

100.0
40
T J(M ax)=150°C, TA =25°C T J(Max) =150°C
T A =25°C
R DS(ON) 30
10.0 limited 100 µs 10 µs
-ID (Amps)

Power (W)

1ms
20
10ms
1.0 0.1s
1s
10
10s DC

0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) .
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=T on /T In descending order
T J,PK =T A +P DM .ZθJA .RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
Thermal Resistance

R θJA =40°C/W
1

PD
0.1

T on
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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