VALLIAMMAI ENGINEERING COLLEGE

SRM Nagar, Kattankulathur – 603 203.

DEPARTMENT OF ELECTRONICS & COMMUNICATION

ENGINEERING

EC6701 – RF & MICROWAVE ENGINEERING

QUESTION BANK

IV- YEAR VII SEM

ACADEMIC YEAR: 2019-2020 ODD SEMESTER

Prepared by

1. Dr.C.Amali, Asst.Prof ( Sel.G),ECE

2. N.Subhashini, Asst.Prof ( Sel.G), ECE
3. T.S.Sheriba, Asst.Prof (S.G), ECE

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

SUBJECT : EC6701 – RF AND MICROWAVE ENGINEERING

SEM / YEAR: VII / IV year B.E.

OBJECTIVES

 To inculcate understanding of the basics required for circuit representation of RF networks.

 To deal with the issues in the design of microwave amplifier.
 To instill knowledge on the properties of various microwave components.
 To deal with the microwave generation and microwave measurement techniques

UNIT I TWO PORT NETWORK THEORY 9

Review of Low frequency parameters: Impedance, Admittance, Hybrid and ABCD parameters,
Different types of interconnection of Two port networks, High Frequency parameters, Formulation
of S parameters, Properties of S parameters, Reciprocal and lossless Network, Transmission matrix,
RF behavior of Resistors, Capacitors and Inductors.

UNIT II RF AMPLIFIERS AND MATCHING NETWORKS 9

Characteristics of Amplifiers, Amplifier power relations, Stability considerations, Stabilization

Methods, Noise Figure, Constant VSWR, Broadband, High power and Multistage Amplifiers,
Impedance matching using discrete components, Two component matching Networks, Frequency
response and quality factor, T and Pi Matching Networks, Microstrip Line Matching Networks.

UNIT III PASSIVE AND ACTIVE MICROWAVE DEVICES 9

Terminations, Attenuators, Phase shifters, Directional couplers, Hybrid Junctions, Power dividers,
Circulator, Isolator, Impedance matching devices: Tuning screw, Stub and quarter wave
transformers. Crystal and Schottkey diode detector and mixers, PIN diode switch, Gunn diode
oscillator, IMPATT diode oscillator and amplifier, Varactor diode, Introduction to MIC.

UNIT IV MICROWAVE GENERATION 9

Review of conventional vacuum Triodes, Tetrodes and Pentodes, High frequency effects in vacuum
Tubes, Theory and application of two cavity Klystron Amplifier, Reflex Klystron oscillator,
Traveling wave tube amplifier, and Magnetron oscillator using Cylindrical, Linear, Coaxial Voltage
tunable Magnetrons, Backward wave Crossed field amplifier and oscillator.

UNIT V MICROWAVE MEASUREMENTS 9

Measuring Instruments : Principle of operation and application of VSWR meter, Power meter,
Spectrum analyzer, Network analyzer, Measurement of Impedance, Frequency, Power, VSWR, Q-
factor, Dielectric constant, Scattering coefficients, Attenuation, S-parameters.

TOTAL: 45 PERIODS
VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering
OUTCOMES:
Upon completion of the course, students will be able to:

 Explain the active & passive microwave devices & components used in Microwave
communication systems.
 Analyze the multi- port RF networks and RF transistor amplifiers.
 Generate Microwave signals and design microwave amplifiers.
 Measure and analyze Microwave signal and parameters.

TEXT BOOKS:

1. Reinhold Ludwig and Gene Bogdanov, “RF Circuit Design: Theory and Applications”,
Pearson Education Inc., 2011
2. Robert E Colin, “Foundations for Microwave Engineering”, John Wiley & Sons Inc., 2005

REFERENCES:

1. David M. Pozar, “Microwave Engineering”, Wiley India (P) Ltd, New Delhi, 2008.
2. Thomas H Lee, “Planar Microwave Engineering: A Practical Guide to Theory, Measurements
and Circuits”, Cambridge University Press, 2004.
3. Mathew M Radmanesh, “RF and Microwave Electronics”, Prentice Hall, 2000.
4. Annapurna Das and Sisir K Das, “Microwave Engineering”, Tata Mc Graw Hill Publishing
Company Ltd, New Delhi, 2005.

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

 UNIT I: TWO PORT NETWORK THEORY

Review of Low frequency parameters: Impedance, Admittance, Hybrid and ABCD parameters,
Different types of interconnection of Two port networks, High Frequency parameters, Formulation of S
parameters, Properties of S parameters, Reciprocal and lossless Network, Transmission matrix, RF
behavior of Resistors, Capacitors and Inductors.
PART A
Q. No Questions BT Level Domain
1. Write the frequency range for following IEEE microwave
bands.
BTL 1 Remembering
(i) L band (ii) S band (iii) C band (iv) X band

2. BTL 1 Remembering
What is the need for S-parameters?
3. Draw the equivalent circuit of a practical capacitor and BTL 1 Remembering
inductor.
4. BTL 1 Remembering
Give the relation between S and ABCD parameters.
5. BTL 1 Remembering
List the properties of S- parameters.
6. Write the equation for VSWR at port 1 in terms of S11. BTL 1 Remembering

7. Describe Reflection Co-efficient at the input side and output BTL 2 Understanding
side of a two-port network in terms of S-parameters.
8. A 5dB attenuator is specified as having VSWR of 1.2. BTL 2 Understanding
Assuming the device is reciprocal, find the S-parameters.
9. Draw the electric equivalent circuit for a high frequency BTL 2 Understanding
inductor.
10. BTL 2 Understanding
Discuss the advantages of scattering parameters.
11. BTL 3 Applying
Demonstrate reciprocal and symmetrical networks.
12. Mention the limitations in measuring Z, Y and ABCD BTL 3 Applying
parameter at microwave frequencies.
13. Show the principal advantage of microwave frequencies over BTL 3 Applying
lower frequency.
14. BTL 4 Analyzing
Examine the features of lossless network.
15. What are the reasons that low frequency parameters cannot be
BTL 4 Analyzing
measured in microwaves?

16. BTL 4 Analyzing

Analyze transmission loss in terms of S-parameters.
17. BTL 5 Evaluating
How would you explain return loss of a two-port network?
18. Assess the importance of reflection loss in microwave BTL 5 Evaluating
network.

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

19. BTL 6 Creating
Discuss four applications of RF circuit.
20. BTL 6 Creating
Explain the transmission matrix and its advantages.
PART B
1. (i)Describe the properties and applications of RF waves. (6)
BTL 1 Remembering
(ii)Examine in detail about low frequency parameters. (7)
2. (i)Show Z and Y matrix formulation of multiport network.(7)
BTL 1 Remembering
(ii)List the limitations of ABCD,Z,Y and h parameters. (6)

3. (i)Define ABCD matrix of a two port network and obtain ABCD

matrix for series impedance and shunt admittance. (6) BTL 1 Remembering
(ii)Compute ABCD matrix for a T network and Pi network. (7)
4. Draw the High Frequency equivalent of wire, resistors, inductors
BTL 1 Remembering
& capacitors and Explain. (13)

5. (i) How microwave junction can be described by scattering

matrix? Derive the scattering matrix relation between the input BTL 2 Understanding
and output of n*n port junction. (6)
(ii) Write the expression of losses in terms of S parameters. (7)
6. (i)Interpret S Matrix for N port network. (6)
(ii)State and verify the symmetry property of the reciprocal networks. BTL 2 Understanding
(7)
7. Discuss and explain the zero, unitary and phase shift property of S BTL 2 Understanding
parameters. (13)
8. (i)Formulate the S parameter of a two port network with
mismatched load. (7) BTL 3 Applying
(ii)Explain the scattering matrix for lossless junction. (6)
9. Demonstrate transmission matrix for a cascade connection of two
port networks? Explain them and obtain the relationship with S BTL 3 Applying
Matrix. (13)
10. A series reactance Z=jX is connected between two lines with
different characteristic impedances Z1 and Z2. Infer the S-matrix of BTL 4 Analyzing
the junction. (13)
11. (i)Obtain the Z-parameters of the two-port T- network shown in
figure. (7)

BTL 4 Analyzing

(ii)A reciprocal device has VSWR=1.5 and insertion loss of 2dB.

Find S parameter. (6)

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

 12. The S parameters of a two port network are given by S11=0.2
0 0 , S22= 0.1 0 0 , S12=0.6 90 0 & S21=0.6 90 0 .
BTL 4 Analyzing
(i)Examine that the network is reciprocal but not lossless. (7)
(ii)Find the return loss at port1 when port 2 is short circuited. (6)

13. A shunt impedance Z is connected across a transmission line with

characteristic impedance Z0. Find the S matrix of the junction. BTL 5 Evaluating
(13)
14. A two port network has the following S matrix (13)
 
S    0.10 0 0.8  450 
0 0

0.845 0.20 
BTL 6 Creating
(i) Determine whether the network is reciprocal and/or lossless.
(ii) If port 2 is terminated with a matched load, calculate return
loss at port 1.
(iii)If port 2 is short circuited, calculate return loss at port 1.
PART C

1. Formulate the overall network parameters for cascade connection

of two port network. Discuss about short circuit, open circuit, h BTL 5 Evaluating
and ABCD low frequency parameters. (15)
2. The S parameters of a two port network are given by
S11=0.2 90 0 , S22= 0.2 90 0 , S12=0.5 90 0 & S21=0.5 0 0 .
(15)
(i) Determine whether the network is lossy or not. BTL 6 Creating
(ii) Is the network symmetrical and reciprocal?
(iii) Find the insertion loss of the network
(iv) Find return loss at port 1 when port 2 is short circuited.
3. Two transmission lines of characteristic impedance Z1 and Z2 are
joined at plane PP. Assess the S parameters in terms of BTL6 Creating
impedances when each line is matched terminated. (15)
4. Explain about RF behavior of passive components and design
electric equivalent circuit of the following at high frequency. (15)
(i) A wire wound resistor BTL5 Evaluating
(ii) A capacitor
(iii) An inductor

UNIT II RF AMPLIFIERS AND MATCHING NETWORKS

Characteristics of Amplifiers, Amplifier power relations, Stability considerations, Stabilization Methods,

Noise Figure, Constant VSWR, Broadband, High power and Multistage Amplifiers, Impedance matching
using discrete components, Two component matching Networks, Frequency response and quality factor, T
and Pi Matching Networks, Microstrip Line Matching Networks.
VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering
 PART A

Q. No Questions BT Domain
Level
1. BTL 4 Analyzing
Explain unilateral power gain and Noise Figure.
2. Describe power gain of amplifier in terms of S-parameters and BTL 2 Understanding
reflection coefficient.
3. BTL 1 Remembering
Define forward current gain and reverse voltage gain.
4. BTL 4 Analyzing
Infer on feedback of RF circuit.
5. Analyze the parameters used to evaluate the performance of an BTL 4 Analyzing
amplifier.
6. BTL 6 Creating
Formulate the need for transducer power gain.
7. Name two noise parameters. BTL 1 Remembering

8. Write the expression for noise figure of a two port amplifier. BTL 1 Remembering

9. Summarize the basic steps in the design process of RF BTL 2 Understanding

amplifier circuits.
10. What are the components required for impedance matching at BTL 1 Remembering
low, mid and high frequencies?
11.
Show the purpose of a matching network and smith chart. BTL 3 Applying

12. Draw any two matching networks used in microwave BTL 2 Understanding
frequencies.
13. List the considerations in selecting the matching network. BTL 1 Remembering

14. Discuss the four adjustable parameters for matching networks. BTL 2 Understanding

15. Show the difference between conditional and unconditional BTL 3 Applying
stabilities of amplifier
16. Examine why impedance matching is required. What are the BTL 3 Applying
other constrains required.
17. List the main drawback of a single stub matching network. BTL 1 Remembering

18. Write the function of matching networks BTL 5 Evaluating

19. Estimate the expression for nodal quality factor with loaded BTL 5 Evaluating
quality factor.
20. Formulate the need for Rollett factor. Write its expression. BTL 6 Creating

PART B

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

1. Describe the characteristics of amplifier and Derive transducer
power gain, unilateral power gain, available power gain and
BTL 1 Remembering
operating power gain of a microwave amplifier using S
parameters. (13)

2. Define the term negative feedback and find h and S parameter BTL 1 Remembering
representation for negative feedback broadband amplifier. (13)
3. Examine the expression for input stability circle equation and
output stability equation. (13) BTL 1 Remembering

4. (i)List and explain stabilization Methods with configuration at

input and output port. (7)
BTL 1 Remembering
(ii)Explain unilateral design for gain in detail and derive the
frequency dependent unilateral figure of merit equation. (6)

5. Explain unconditional stability and the tests to conclude the

same. (13) BTL 2 Understanding

6.(i) (i)Illustrate about the general noise figure and NF circles. (7)
(ii) (ii)Also show that the noise figure of a cascaded multistage
BTL 3 Applying
amplifier is F=F1+ (F2-1)/GA1+ (F3-1)/GA2+….. Where F1 and
F2…. are noise figures and GA1 and GA2…are power gains. (6)

7. A MESFET operated at 5.7GHz ha the following S

parameters: S11=0.5∟-60°, S12=0.02∟0°, S21=6.5∟115° and
S22=0.6∟-35°. Determine if the circuit is unconditionally BTL 2 Understanding
stable and Find the maximum power gain under optimal
choice of reflection coefficients, assuming unilateral design
(S12=0). (13)
8. The S-parameters for a transistor is given below. Determine
its stability and draw the input and output stability circles, use
BTL 2 Understanding
smith chart. S11=0.385∟-53°, S12=0.045∟90°, S12=2.7∟78°
and S22=0.89∟-26.5°. (13)

9. Demonstrate on microstripline matching networks with

BTL 3 Applying
necessary diagrams. (13)

10. 1. (i)Write notes on matching network? Why is this required? (5)

(ii)Design a lumped element ‘LC’ network for matching BTL 4 Analyzing
ZL=10+j10Ω to a 50Ω transmission line at 1 GHz. (8)

11. Discuss about the design of T section and Pi section matching

Networks. (13) BTL 4 Analyzing

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

 12. Examine single stub and double stub matching network and BTL 4 Analyzing
Explain in detail. (13)
13. Evaluate the smith chart approach to design the L-section and
BTL 5 Evaluating
T-section matching Networks. (13)

14. Draw the 8dB gain circle of the transistor with the following S
parameters at 1GHz. S11=0.46∟-97°, S12=0.06∟-22°, BTL 6 Creating
S21=7.1∟112° and S22= 0.57 ∟-48°. (13)
PART C

1. An RF amplifier has the following S parameters:

S11=0.3∟-70°, S21=3.5∟85°, S12=0.2∟-10°, S22=0.4∟-45°.
Further Vs=5V∟0°, Zs=40Ω and ZL=73Ω. Assuming BTL 5 Evaluating
Zo=50Ω. Find GT, GTU, GA and G. Also find Power delivered
to the load PL, available power from source PA and incident
power to amplifier Pinc. (15)
2. Develop a balanced broadband amplifier and discuss the
theory behind the operation of couplers and power dividers BTL 5 Evaluating
with neat diagrams. (15)
3. Design LC network to match source impedance Zs=50+j25Ω
to the load ZL=25-j50Ω.Assume Zo=50Ω; f=2GHz. Use smith BTL 6 Creating
chart. (15)
4. Generalize the procedure for designing a two component
matching networks and also explain about forbidden regions, BTL 6 Creating
frequency response and quality factor. (15)

UNIT III PASSIVE AND ACTIVE MICROWAVE DEVICES

Terminations, Attenuators, Phase shifters, Directional couplers, Hybrid Junctions, Power dividers, Circulator,
Isolator, Impedance matching devices: Tuning screw, Stub and quarter wave transformers. Crystal and Schottky
diode detector and mixers, PIN diode switch, Gunn diode oscillator, IMPATT diode oscillator and amplifier,
Varactor diode, Introduction to MIC.

PART A

Q.No Questions BT Domain

Level
1. Outline the features of ferrites and write its properties. Give some BTL 1 Remembering
examples of ferrite devices.
2. Identify the use of matched termination in microwave communication BTL 1 Remembering
setup.
3. BTL 1 Remembering
Draw the equivalent circuit of a Gunn diode.

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

4. BTL 1 Remembering
Write the S matrix for 4 port circulator.
5. BTL 1 Remembering
What are waveguide corners, bends and twists?
6. List the basic parameters to measure the performance of a Directional BTL 1 Remembering
Coupler?
7. Summarize sum and difference arm of Magic Tee. BTL 2 Understanding
8. Discuss about gyrator and phase shifter. BTL 2 Understanding
9. Illustrate islolator. And why islolators are called Unline? BTL 2 Understanding
10. Review the principle of Faraday’s rotation. BTL 2 Understanding
11. Demonstrate Gunn diode and list the modes. BTL 3 Applying
12. Exhibit the negative resistance property in Gunn diode. BTL 3 Applying
13. Interpret about the step recovery diode. BTL 3 Applying
14. Examine the factors reducing the efficiency of IMPATT diode. BTL 4 Analyzing
15. Categorize the applications of magic-Tee. BTL 4 Analyzing
16. Compare PIN and PN diode. BTL 4 Analyzing
17. Assess the terms IMPATT, TRAPATT and BARITT. BTL 5 Evaluating
18. BTL 5 Evaluating
Determine the substrate materials used in MMICs.
19. Formulate the applications based of TRAPATT diode. BTL 6 Creating

20. Organize the various types of strip lines used in MMIC. BTL 6 Creating

PART B
1. With neat diagram explain the operation of attenuator and phase shifter in BTL 1 Remembering
detail. (13)

2. Show the operation and properties of E-plane Tee and H-plane Tee. Derive BTL 1 Remembering
their S parameters. (13)

3. (i)Find scattering matrix for Hybrid Tee/Magic Tee using S parameter BTL 1 Remembering
theory. (7)
(ii)List and explain the applications of magic Tee. (6)

4. (i)Write notes on Hybrid ring/Rat race junction. With the help of a neat BTL 1 Remembering
diagram explain its working principle. (7)
(ii)Show with neat diagram waveguide terminations, corners, twists and
bends. (6)
5. (i)From the first principles derive the Scattering matrix of a multi hole BTL 2 Understanding
Directional Coupler. (8)

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

 (ii)Infer the characteristics of directional coupler in terms of S parameters
and explain in detail two hole directional coupler. (5)

6. Demonstrate the principle of microwave transmission through ferrite and BTL 2 Understanding
explain how a Gyrator and isolator is designed based on this effect. (13)
7. (i)Explain principle of operation of 3 port circulator with S parameter.(6) BTL 2 Understanding
(ii)Construct four Port circulator using Magic Tee and also by using
Directional Coupler. (7)
8. With neat diagrams, explain the operation of Tunnel diode and its BTL 3 Applying
application as an oscillator and amplifier. (13)

9. (i)How would you explain varactor diode and its application as BTL 3 Applying
frequency multiplier? (9)
(ii) In detail explain step recovery diode. (4)

10. (i)Examine crystal diode, schottky diode, diode detector and diode mixer BTL 4 Analyzing
circuit. (7)
(ii)Explain in detail PIN diode and its applications. (6)

11. Discuss the working principle of Gunn diode as a transferred electron BTL 4 Analyzing
device with two valley model, Also draw the structure, equivalent circuit
and V-I characteristics of Gunn diode. (13)

12. (i)A 20 mW signal is fed into one of collinear port 1 of a lossless H- BTL 4 Analyzing
plane T-junction. Analyze the power delivered through each port when
other ports are terminated in matched load. (6)

(ii)In a H-plane T-junction, examine power delivered to the loads 40

ohm and 60 ohm connected to arms 1 and 2 when 10 mW power is
delivered to matched port 3. (7)

13. (i)What are avalanche transit time devices? Explain the operation and BTL 5 Evaluating
construction of IMPATT diode. (6)
(ii)Explain mechanism of oscillation of IMPATT and as power amplifier.
(7)
14. Discuss the following : BTL 6 Creating
(i) Quarter wave transformer (6)
(ii) Gunn diode oscillator (7)

PART C

1. Can you explain the materials used for MMIC fabrication? Also explain BTL 6 Creating
with neat diagrams the fabrication process of MMICs. (15)

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

 2. What is Circulator? With neat diagram, explain the working principle, BTL 5 Evaluating
construction, operation of four port circulator using magic-tee. Verify the
circulator theory with necessary S-parameter equations. (15)

3. With neat diagram, discuss the characteristics of series Tee and shunt Tee BTL 6 Creating
and derive the S matrix. (15)

4. Interpret the principle of operation of any two non-reciprocal devices and BTL 5 Evaluating
derive the S parameters. (15)

UNIT IV MICROWAVE GENERATION

Review of conventional vacuum Triodes, Tetrodes and Pentodes, High frequency effects in vacuum Tubes,
Theory and application of Two cavity Klystron Amplifier, Reflex Klystron oscillator, Traveling wave tube
amplifier, and Magnetron oscillator using Cylindrical, Linear, Coaxial Voltage tunable Magnetrons, Backward
wave Crossed field amplifier and oscillator.
PART A
Q.No Questions BT Level Domain
1. What is Tetrodes and Pentodes? BTL 1 Remembering
2. State the transferred electron effect. BTL 1 Remembering
3. Write about the classification of microwave tubes and explain the BTL 1 Remembering
difference between them.
4. Define density modulation? BTL 1 Remembering
5. Quote the difference between TWTA and Klystron Amplifier. BTL 1 Remembering
6. List the advantages of Parametric amplifier BTL 1 Remembering
7. Illustrate the phase focusing effect. BTL 2 Understanding
8. Summarize the condition for oscillation and applications in BTL 2 Understanding
Reflex Klystron?
9. Discuss any four high frequency limitations. BTL 2 Understanding
10. Demonstrate frequency pulling and frequency pushing in BTL 3 Applying
magnetrons?
11. Interpret the effect of transit time. BTL 3 Applying
12. Exhibit the purpose of slow wave structures in TWT. BTL 3 Applying
13. Distinguish between O-type and M-type tubes. BTL 4 Analyzing
14. Explain Hull cutoff condition? BTL 4 Analyzing
15. Examine the velocity modulation in microwave component. BTL 4 Analyzing
16. Determine the characteristics of Co-axial magnetron. BTL 5 Evaluating
17. Why magnetron is called as Cross field Devices? BTL 5 Evaluating
18. How would you explain BWO? State the applications of BWO. BTL 6 Creating
VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering
19. Devise the Bunching process. BTL 6 Creating
20. Demonstrate frequency pulling and frequency pushing in BTL 2 Understanding
magnetrons.
PART – B
1. (i)Write notes on high frequency limitations of conventional BTL 1 Remembering
vacuum devices. (8)
(ii)What are the characteristics of travelling wave tube. (5)
2. (i)With the Applegate diagram, Describe the mechanism of BTL 1 Remembering
operation of two cavity klystron Amplifier. (7)
(ii)Derive the equation of velocity modulation and transit time in
drift space. (6)
3. (i)Define bunching process and obtain optimum bunching BTL 1 Remembering
distance Lopt. (7)
(ii)Obtain output power, efficiency, mutual conductance and
voltage gain of klystron amplifier. (6)

4. An identical two cavity Klystron amplifiers operates at 4GHz BTL 1 Remembering

with V0 =1 kV, Io=22mA, cavity gap 1mm, drift space 3 cms.
Calculate beam coupling coefficient, d.c. transit angle in drift
space and input cavity voltage magnitude for maximum output
voltage. (13)

5. (i)Discuss the working principle of reflex klystron oscillator BTL 2 Understanding

with necessary diagrams. (7)
(ii)Derive velocity modulation, transit time of reflex klystron
oscillator. (6)

6. (i)Summarize the power output mode curve/frequency BTL 2 Understanding

characteristics of reflex klystron. (6)
(ii)Draw the equivalent circuit and Obtain the electronic spiral
curve of reflex klystron. (7)

7. A reflex klystron is operated at 9 GHz with dc beam voltage BTL 2 Understanding

600V, beam current 10mA, repeller space length of 1mm for 1
¾ mode, Beam coupling coefficient is assumed to be 1.
Calculate the repeller voltage, RF power output, electronic
efficiency and the bandwidth over ΔVR=1V. (13)

8. Illustrate with interaction region diagram the mechanism of BTL 3 Applying

operation of TWT amplifier, its applications and the expression
for the gain of a TWT. (13)
9. (i) Demonstrate the role of slow wave structure in TWT and give BTL 3 Applying
the comparison between two cavity Klystron amplifiers with
travelling wave tube. (7)
(ii)A helical TWT has diameter of 2mm with 50 turns per cm.
Calculate the axial phase velocity and anode voltage at which

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

 TWT can be operated for useful gain. (6)

10. A helix TWT operates at 4GHz under a beam voltage 10KV and BTL 4 Analyzing
beam current 500mA. If the helix impedance is 25 Ω and the
interaction length of 20cm, Find the O/P power gain in dB. (13)

11. Examine the construction, operation, characteristics and BTL 4 Analyzing

applications of BWO. (13)

12. Analyze the Gain Characteristics of Travelling Wave Tube BTL 4 Analyzing
Amplifier. (13)

13. A pulsed cylindrical magnetron is operated with the following BTL 5 Evaluating
parameters:
Anode voltage = 25 kV
Beam current = 25 A
Magnetic density = 0.34 Wb/m2
Radius of cathode cylinder = 5 cm
Radius of anode cylinder = 10 cm
Calculate :
a) The angular frequency, (4)
b) The cut off voltage, (4)
c) The cut off magnetic flux density. (5)
14. (i) Generalize the different types of magnetron oscillators. (7) BTL 6 Creating
(ii) An X band pulsed cylindrical magnetron has Anode voltage
V0=25KV, Beam current I0=25A, Magnetic flux density
B0=0.34wb/m2 , radius of cathode cylinder a=5cm and radius of
vane edge to center b=10cm. Determine cyclotron angular
frequency, cutoff voltage for a fixed B0 and cutoff magnetic flux
density for a fixed V0. (6)

PART C

1. Assess the working principle and operation of multi-cavity BTL 5 Evaluating

Klystron amplifier and derive the expression for its output power.
(15)
2. How would you describe the π mode of oscillations of Magnetron, BTL 5 Evaluating
what is meant by strapping in magnetron and why it is done?
(15)
3. Develop the cross sectional view of magnetron tube and explain BTL 6 Creating
how bunching occurs with equations of electron trajectory and
derive the expression for Hull cut-off voltage.
(15)
4. A two cavity Klystron amplifier has the following specifications : BTL 6 Creating
(15)
VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering
 Beam Voltage , Vo = 900V
Beam Current, Io = 30mA
Frequency f = 8 GHz
Gap spacing in either cavity , d = 1 mm
Spacing between center of cavities , L = 4 cm
Effective shunt impedance, Rsh = 49kΩ
Determine
(i) Electron velocity
(ii) dc transit time of electron
(iii) Maximum input voltage
(iv) Voltage gain

UNIT V MICROWAVE MEASUREMENTS

Measuring Instruments : Principle of operation and application of VSWR meter, Power meter, Spectrum
analyzer, Network analyzer, Measurement of Impedance, Frequency, Power, VSWR, Q-factor, Dielectric
constant, Scattering coefficients, Attenuation, S-parameters.
PART A

Q.No Questions BT Domain

Level
1. Quote the difference between Scalar and Vector network BTL 1 Remembering
analyzers.
2. What is the significance behind dielectric constant measurement? BTL 1 Remembering

3. List any two methods of measuring microwave power. BTL 1 Remembering

4. Name two sensors used for microwave power measurement. BTL 1 Remembering

5. List the main errors in the measurement of attenuation at BTL 1 Remembering

microwave frequency.
6. Show the significance of VSWR measurement. BTL 1 Remembering

7. Summarize the basic design considerations for the proper BTL 2 Understanding
operation of a spectrum Analyzer?

8. Describe the three scales on the VSWR meter. BTL 2 Understanding

9. Interpret the methods used for frequency measurement BTL 2 Understanding

10. Differentiate barretter and thermistor. BTL 2 Understanding

11. Explain guide wavelength BTL 3 Applying

12. Show how the S-parameter of a microwave circuit measured? BTL 3 Applying

13. Demonstrate the errors possible in VSWR measurements. BTL 3 Applying

14. Classify microwave power with its range. BTL 4 Analyzing

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

15. Analyze the methods employed to measure cavity Q? BTL 4 Analyzing

16. Infer some application of spectrum analyzer. BTL 4 Analyzing

17. Determine the uses of network analyzer. What are the types of BTL 5 Evaluating
network analyser?

18. How will you determine the VSWR from reflection coffecient? BTL 5 Evaluating

19. Discuss the different types of Impedance measurement methods? BTL 6 Creating

20. Can you elaborate the main purpose of slotted section with line BTL 6 Creating
carriage?
PART – B
1. Summarize about Spectrum analyzer and Network analyzer with BTL 1 Remembering
suitable diagrams. (13)

2. Write notes on power sensors used for microwave power BTL 1 Remembering
measurements. (13)

3. (i)Show the principle of power meter bridge circuit. (5) BTL 1 Remembering
(ii)Identify how high power measurements are done using
calorimetric method. (8)

4. What are the steps involved for the insertion loss and power ratio BTL 1 Remembering
method of attenuation measurement. Explain in detail. (13)

5. With the experimental setup, describe return loss measurement by BTL 2 Understanding
reflectometer method. (13)

6. Summarize the slotted line method of VSWR measurement to BTL 2 Understanding

measure low values of VSWR. (13)

7. Describe the measurement of high VSWR by double minima BTL 2 Understanding

method with the help of block diagram. (13)

8. (i)Illustrate the procedure to measure the impedance of a Load BTL 3 Applying

using slotted line method. (7)
(ii) Examine the measurement of impedance of a discontinuity
and measurement of impedance by reflectometer. (6)

9. Classify and explain the three ways of frequency measurement BTL 3 Applying
techniques? (13)

10. Explain the impedance, wavelength and frequency measurement BTL 4 Analyzing
using slotted line method. (13)

11. Analyze about cavity Q. Also explain slotted line method and BTL 4 Analyzing
reflectometer method of measurement of Q. (13)

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering

12. Infer in detail the measurement of Q from transmitted power BTL 4 Analyzing
measurement. (13)

13. How would you determine dielectric constant, explain with block BTL 5 Evaluating
diagram. (13)

14. (i) Formulate a method for the calculation of S parameter of a two BTL 6 Creating
port network. (8)
(ii)How would you calculate the S parameter of a four port
network- say for a magic Tee. (5)

PART C

1. (i) The signal power at the input of a device is 10 mW. The signal BTL 6 Creating
power at the output of the same device is 0.20 mW. Calculate the
insertion loss in dB of this Component (8)
(ii) Calculate the VSWR in dB in a waveguide when the load is a
3 dB attenuator terminated by a short circuit. (7)
2. A coaxial slotted line is used to measure VSWR of the load at 2 BTL 5 Evaluating
GHz by double minima method. If the distance between the
positions of twice minimum power is 0.5 cm, estimate the value
VSWR on the line and the magnitude of the voltage reflection
coefficient. (15)
3. (i) A waveguide with a load is matched by a tuning screw located BTL 6 Creating
at position 1. What impedance will be presented by the
waveguide to the generator if the screw is moved by half
wavelength towards the load from position 1. (9)
(ii) The reflection coefficient of a load is 0.5∟-30ᵒ calculate the
normalized admittance of the load. (6)
4. In attenuation measurement of a matched attenuator the BTL 5 Evaluating
microwave source is modulated by 1kHz square wave. The
VSWR is peaked to 0 dB with the 30 dB range without attenuator
in the circuit. When the attenuator is inserted, the VSWR meter
reads the value of 2 dB on the VSWR scale in 40dB range.
Compute the attenuation provided by the attenuator. (15)

VEC/ECE/VII Semester/EC 6701 RF and Microwave Engineering