Title: Study the characteristics of Silicon Controlled Rectifier (SCR )

Abstract: In this experiment we studied the characteristics of Silicon Controlled Rectifier

(SCR). It is p-n-p-n four layer three terminal device (Anode, Cathode, gate) and used for
switching in high current industrial application. It is also known as Thyristor. And SCR is a
unidirectional device. We implemented the circuit in trainer board which given in the lab
manual and also simulated using PSIM. We’ve filled up the data table using simulated value
and hardware implemented value and plotted I-V characteristics curve. The I-V
characteristics curve was perfect for simulated value, but for hardware implemented value
the I-V characteristics curve was not so perfect.
Circuit Diagram:

Fig-1: Complete experimental setup.

Experimental results:

Fig-2: Implemented Circuit.

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** The values of voltage and current obtained by implementing the above circuit diagram

Vin (V) VAK (V) IAK (mA)

0 0 0
2 .6 0
4 .673 9
6 .680 16
10 .692 23
14 .701 27
16 .705 34
20 .710 40
23 .718 46
26 .722 50
28 .725 55
30 .728 22
Table-1: Experimental value.

Fig-3: I-V characteristics curve of SCR (Experimental)

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Simulation results:

Fig-4: SCR is off state.

Fig-5: SCR is on state.

**The values of voltage and current obtained by simulating the above circuit diagram
Vin(V) VAK (V) IAK (A)
0 0 0
2 1.99989 1.998*10~7
4 3.99 3.99*10~7
6 5.9997 5.99*10~7
10 9.99 9.98*10~7
14 13.9 1.3*10~7
16 15.99 1.598*10~7
20 19.99 1.9*10~6
23 14.0006 0.0158
26 14.0002 0.02105
28 14.0008 0.0246
30 14.00028 0.02807
Table-2: Simulated value (For voltage drop=14V).

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Fig-6: I-V characteristics curve of SCR (Simulated value for 14V).

Fig-7: SCR is off state (Voltage drop=12V).

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 Vin(V) VAK (V) IAK (A)
0 0 0
2 1.999 1.99*10~7
4 3.991 3.99*10~7
6 5.9997 5.99*10~7
10 9.992 9.98*10~7
14 13.9 1.39*10~7
16 15.99 1.59*10~6
20 12.0001 0.0115
23 12.000 0.0158
26 12.000 0.02105
28 12.000 0.0246
30 12.000 0.02807
Table-3: Simulated value (For voltage drop=12V).

Fig-8: I-V characteristics curve of SCR (Simulated value for 12V).

Here, at first we set-up our circuit in P-SIM. There was our Gate voltage 0.7 v. When Initial
voltage is given 0(zero), then IAK and VAK is also 0. Then we increased Initial voltage, then
we have seen that VAK and IAK also increased very slowly. When we input 2v in Vin we have
seen that VAK is 1.9998 V and IAK 1.99998*10~7 A. And finally we gave input voltage Vin in
30v, here VAK was 14.0028 and IAK 0.02807. Overall simulation result we could say that,if
we increased voltage in Vin, VAK also increased. But IAK also increased

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Discussion:
Silicon Controlled Rectifier (SCR) is a three terminal, three junctions, 4-layer, p-n-p-n
semiconductor device that allows the current to flow in one direction only. It is the member
of the thyristor family.

Fig-9: Internal construction, symbol & pin configuration of SCR.

Application of the SCR:

I-V Characteristics of SCR:I-V characteristic is the plot, which shows the variation of
anode current w.r.t. anode voltage at different biasing condition
Reverse characteristics: Small leakage current called reverse blocking current flows when the
SCR is reversed biased (anode is negative w.r.t. cathode). At peak reverse voltage, reverse
current increases sharply. This is called reverse break over or reverse avalanche region.
Forward Characteristics: Small Forward leakage current flows when SCR is forward biased
(anode is positive w.r.t. cathode) and anode voltage is less than forward break over voltage.
When Anode current exceeds latching current, SCR switches ON. Anode current increases
sharply and anode voltage drops. The gate current controls the forward break over voltage.

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 Fig-10: I-V characteristics of SCR

Forward break over voltage (VFBO):It is the forward anode voltage at which SCR
switches ON and begins to conduct, when gate current is zero. SCR is in the Forward
Blocking Region when the forward anode voltage is less than VFBO and little forward
leakage current flows through SCR.

Fig-11: Concept Structure of VFBO when Ig =0

Gate control:The gate terminal controls the forward break over voltage and hence the
forward bias level at which the SCR is turned ON. The higher the value of the gate current,
the lower is the anode voltage requires turning SCR ON. Once the SCR is turned ON, gate
loses control and its removal does not affect the conduction of the SCR. The anode voltage
and the external load then determine the anode current, solely.

Fig-12: Concept Structure of VFBO when Ig ≠0

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Latching Current (IL):
Latching current is the forward anode current requires turning SCR ON. SCR remains OFF as
long as the anode current is less than the latching current.

Fig-13: Concept Structure of latching current

Holding current (IH):

The holding current is the minimum current which must pass through the SCR in order for it
to remain in the 'ON' state.

Fig-14: Concept Structure of holding current

References:
[1]. SCR characteristics Trainer Manual NV6530; NUIS Technologies Pvt. Ltd., Pardeshipura,
Indore- India,
[2]. “Introduction to Power electronics”. Dr. Robert Erickson, University of Colorado Boulder
and University of Colorado System.