AOD409/AOI409

60V P-Channel MOSFET

General Description Product Summary

• Trench Power MV MOSFET technology VDS -60V

• Low RDS(ON) ID (at VGS=-10V) -26A
• Low Gate Charge RDS(ON) (at VGS=-10V) < 40mΩ
• Optimized for fast-switching applications
RDS(ON) (at VGS=-4.5V) < 55mΩ

Applications 100% UIS Tested

100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications

TO252 TO-251A
IPAK Bottom View D
DPAK
TopView Bottom View Top View

D
D

G
D G S
D S D S
S D G
G
S
G

Orderable Part Number Package Type Form Minimum Order Quantity

AOD409 TO-252 Tape & Reel 2500
AOI409 TO-251A Tube 4000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C -26
ID
Current TC=100°C -18 A
C
Pulsed Drain Current IDM -80
Avalanche Current C IAS -26 A
C
Avalanche energy L=0.1mH EAS 34 mJ
TC=25°C 60
PD W
Power Dissipation B TC=100°C 30
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 16.7 25 °C/W
AD RqJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RqJC 1.9 2.5 °C/W

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 AOD409/AOI409

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250μA, VGS=0V -60 V
VDS=-48V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 -1.9 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -80 A
VGS=-10V, ID=-20A 32 40
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 53
VGS=-4.5V, ID=-20A 43 55 mΩ
gFS Forward Transconductance VDS=-5V, ID=-20A 32 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.73 -1 V
IS Maximum Body-Diode Continuous Current -30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2977 3600 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 241 pF
Crss Reverse Transfer Capacitance 153 pF
Rg Gate resistance f=1MHz 2 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 44 54 nC
Qg(4.5V) Total Gate Charge 22.2 28 nC
VGS=-10V, VDS=-30V, ID=-20A
Qgs Gate Source Charge 9 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=1.5W, 14.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 38 ns
tf Turn-Off Fall Time 15 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/ms 40 50 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/ms 59 nC

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD409/AOI409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
-10V -4.5V VDS=-5V
-4V
25 25
-5V
20 20
-6V
-ID (A)

-ID(A)
15 15
-3.5V
10 10 125°C

5 5 25°C
VGS=-3V

0 0
0 1 2 3 4 5 1 2 3 4 5

-VDS (Volts) -VGS(Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

60 2

Normalized On-Resistance 1.8

50 VGS=-10V
VGS=-4.5V ID=-20A
1.6
RDS(ON) (mW)

40
1.4
30
1.2
VGS=-10V VGS=-4.5V
ID=-20A
20 1

10 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

80 1.0E+01
ID=-20A
1.0E+00

60 125°C 1.0E-01
RDS(ON) (mW)

-IS (A)

1.0E-02 125°C

40 1.0E-03 25°C

1.0E-04
25°C

20 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOD409/AOI409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4500
VDS=-30V
ID=-20A 4000
8 3500
Ciss

Capacitance (pF)
3000
-VGS (Volts)

6
2500

2000
4
1500

2 1000
Coss
500
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30

Qg (nC) -VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=175°C
TC=25°C
100.0 10ms 400
10ms
RDS(ON)
Power (W)

300
-ID (Amps)

10.0 100ms
limited
1ms
1.0 10ms 200
DC

0.1 TJ(Max)=175°C 100

TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100
-VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Case (Note F)
Safe Operating Area (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC
Thermal Resistance

RqJC=2.5°C/W
1

0.1 PD
Single Pulse

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD409/AOI409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

L  ID
tA  80
30 BV  VDD
-ID(A), Peak Avalanche Current

25 60

Power Dissipation (W)

20 40

15 20

TA=25°C
10 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175

Time in avalanche, tA (s) TCASE (°C)

Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)

30 60
TA=25°C
25 50

40
Current rating -ID(A)

20
Power (W)

15 30

10 20

5 10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note F)
Ambient (Note H)

10
ZqJA Normalized Transient

D=Ton/T In descending order

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

1 RqJA=50°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOD409/AOI409

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.7.0: March 2018 www.aosmd.com Page 6 of 6