ICS 2200 ELECTRONICS

Electronics is the study of conduction current in solids, gases, vacuum and liquids.
It is a branch of engineering that comes from the 2 words: Electrons – negatively charged
particle in an atom, Mechanics – Study of motion of an electron.
Electronics is also study of electrons and how they can be used to perform different functions.
-The ability to control movement of electrons or electron flow is the basic of electronics; it
specializes in digital computers, audio systems, communication systems, and automatic
control.

Analogue Signal
An analogue signal is one whose amplitude is changing with time continuously. This is
shown in the diagram below.

Peak Value Peak to Peak value

Period cycle

Characteristic of analogue signals:

- An analogue signal varies continuously with time. It is typical of nature e.g light, end
waves and voice. They have been used for the last 100 years.

Digital signal

1 0 1 0 1
time

Characteristics of Digital Signals

- They do not vary with time. Occur in discrete form.

- Typical of technology. They can be produced from analogue signals through analogue
to digital conversion.
- They have been used for about 50 years with invention of vacuum tubes and
transistors.

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Applications of electronics
- Communication – satellites
- Medicine
- Entertainment - 3 stereos, HIFI systems, Ipod
- Industrial applications – Assembly lines
- Transport – Autopilot, tracking systems, missile guiding
- Military / defense/ security – Biometrics
- Astronomy
- Instrumentation – Electronic pianos
Radar – Radio detection and ranging can be used for all the above e.g in medicine to detect
cancer

PHYSICAL AND CHEMICAL STATES OF MATTERS

 Matter is anything that occupies spaces and has weight.
 The basic building block of matter is an atom.

Matter exists in three physical states –

- Solid
- Liquid
- Gas
When is exists in liquid or gas its dimension are determined by the container.
Chemical states of matter include:
- Elements
- Compounds
- Mixtures

 Element: - is a substance that cannot be broken into simpler substances. It has only
one kind of atom e.g. Mg, K, Na, Oxygen.

Hydrogen H 1
Helium He 2
Lithium Li 3
Beryllium Be 4
Boron B 5
Carbon C 6
Nitrogen N 7
Oxygen O 8
Fluorine F 9
Neon Ne 10
Sodium Na 11
Magnesium Mg 12
Aluminium Al 13
Silicon Si 14
Phosphorous P 15
Sulphur S 16
Chlorine Cl 17
Argon Ar 18
Potassium K 19
Calcium Ca 20

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  Compound - is formed by chemical combination of two or more elements e.g. Nacl,
MgO, H2O etc.
 Mixtures – Combination of substances where the individual elements poses the same
properties as when they were alone e.g. Air.

All matter is composed of atoms and molecules.

The smallest particle into which a compound can be divided and retain its physical
properties is called a molecule.
The smallest particle into which an element can be divided and retain its chemical
properties is called an atom.
Electric charge: - The quantity of electricity in a body

THE ELECTRON THEORY

 Every atom has one or more electron and one nucleus. The nucleus contains the
protons and Neutrons.
 The simplest atom is that of hydrogen and consists on one electron orbiting around the
nucleus.
 The nucleus has only one proton apart. In a simple hydrogen atom the nucleus is made
of protons and neutrons of approximately equal numbers.
 The electrical charge of an electron is negative and that of a proton is +ve and neutron
is neutral.
 A normal atom is electrically neutral containing an equal number of +vely charged
atoms and –vely charged electrons. Meaning that the charge per electron and proton is
equal but opposite in polarity.
Electron

Sub
Shells
Nucleus

X Proton
Forbidden
gap Neutron

Shell

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THE ATOM MODEL
 One of the men who contributed greatly to the development and understanding of
atomic structure Neil Bohrls.
 He developed a model for atoms which restricted the orbits of atom electrons to well
defined shells of levels. i.e. Electron do not crowd together in mass rather more round
in different orbits.
 An atomic level of such orbits is termed as a shell which can be defined as the
spherical orbit of an electron or electrons.
 The figure above shows the structure of a carbon atom.

 Nucleus -is the innermost part of an atom. It contains protons and neutrons.
 Electron-negatively charged particle revolving in specified orbits called quantum
energy levels.
 Proton-positively charged particle in the nucleus.
 Neutron-particle with no charge in the nucleus.
 Shell-section where electrons orbit, it has subshells and quantum energy levels. The
number of electrons (N) in a shell is given by the general formulae N = 2n2 where n is
the shell number.
 Subshell-section with electrons inside a shell, several of them make a shell. The
number of electrons in a subshell is given by the general formula: 2+4(m–1), where m
is the subshell number.
 Forbidden gap-section where electrons can not orbit, is between two subshells.
 The first theory of Bohrl was that an electron in an atom can revolve in certain
specified orbits without the emission of radiant energy. The theory explains the
stability of an atom.
 Second theory was that an electron may make a transition from one of its specified
non radiating orbits to another of lower energy. When it does so a single proton is
emitted whose energy difference between the initial and final states and whose
frequency f is given by the relation below.
hf  Ei  E f
Where h is plank’s constant, E i and E f are the energies of initial and final state.

THE EXCLUSION PRINCIPLE

o Paul’s exclusion principle states that no two electrons can occupy the same quantum
mechanical state since different states correspond to different distances from the
nucleus.
o In a complex atom there’s no room for all the electrons in state near the nucleus.
Some are forced into states further away having higher energies.
o The maximum number of electrons per shell is given by 2n2 where n is the shell
number counting outwards from the nucleus.
o Sub-shell electrons = 2 + 4(m-1), where m is the subshell number
1st 2é
nd
2 2é, 6é
3rd 2é, 6é, 10é
th
4 2é, 6é, 10é, 14é
5th 2é, 6é, 10é, 14é, 18é
th
6 2é, 6é, 10é, 14é, 18é, 22é

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Example
Determine the maximum no of electrons in the 3rd shell
Max No = 2n
N=3
= 2 x 32
= 18es

ATOMIC NUMBER & ATOMIC WEIGHT

Atomic number of an element is determined by the number of protons in each of it’s atoms of
that element
B = 5 2:3
S = 16 2.3.6
Atomic weight of an element is determined by comparing the weight of it’s atoms of carbon
= 12

VALENCE ELECTORNS (State electron)

o Are those electrons in the outermost shell of an atom. The number of valence
electrons in an atom determines it’d stability or instability both electrically and
chemically.
o For all the atoms with two shall the outermost shell is full when it has 8 es if the atom
if the atom has fewer than 8es in the outermost shell then the atom is electrically and
chemically unstable and active.
o Electrically the valence electrons can be moved from their own atoms and are some
times referred to as free electrons.
o It’s possible to detach an orbit electron from an atom leaving the atom with an access
the charge. The atom in this state is called a +ve ion or cation.
o Alternatively the neutral atom may be given an addition orbit/electron in which case
the atom assumes a negative charge. Which is called an -ve or anion.
o An ion is any atoms that is not electrically balanced and that has gained or lost
electrons.

Energies that change electrical balance include:-

a- Chemical energy – dry cells, batteries
b- Mechanical energy e.g generators
c- Light energy
d- Heat energy (Friction)
e- Magnetic energy

Conduction in a gas

Anode

Cathode Space
Gas Molecules
Charge
Conduction in gases takes place through ionization. Accelerating electrons strike the
molecular and ionize it.The gas should have low pressure. It cannot conduct under normal
pressure.

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Conduction in a vacuum
A vacuum can only conduct electromagnetic waves e.g. light

Material used in electrical & electronic circuits

Solids
Types of solids
- Conductors - Insulators -Semiconductors

Conductors
o These are materials that allow current to pass through.
o They have 1-3 electrons in outermost shell.
o Have metallic bond
o Have free electrons.
o Have low resistance.
o The conduction band and valence band overlap and are very small.
Conduction Band

Forbidden Band

Valence Band

o Resistance increases with increase in temperature.

o Eg = 0ev

Examples of conductors are all metals.

Insulators
o These are materials that do not allow current to pass through.
o They have 5 to 8 electrons in outermost shell.
o They have a structure that has covalent bonding that results in no free electrons that
allow conduction of an electric current.
o Insulators have a very large energy gap between the conduction band and the valence
band.
o Eg = 5ev

Conduction Band

Forbidden Band

Valence Band

Semiconductors
These are materials that have poor conductivity at low temperatures and good conductivity at
high temperatures.

Characteristics of Semiconductors
o They have 4 electrons in outermost shell / band
o Their atomic structure has covalent bonds
o They have a moderate number of free electrons
o Eg = 1.1ev

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 Conduction Band
Forbidden Band
Valence Band

o They have a moderately sized of forbidden band

o There are two types : Intrinsic and Extrinsic

Intrinsic semi conductors

These are semi conductors in their pure form e. g silicon, germanium. Conduction takes place
through holes and electrons.

Silicon Structure 2:8:4

x

x Si x

x
X

X
x x

x Si x
X X Si X x
X Si x

x x
X

x
X

x Si x

Extrinsic Semiconductors
These are semiconductors to which impurities have been added through the process of
doping.

There are two types: P-type

N-type

P – Type
This is formed by process of adding trivalent impurities into the crystal structure of silicon.
Trivalent impurities include boron

Boron 2:3
Silicon 2:8:4

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 x

x Si x

x
X
Hole

X
x x

x Si x
X B X x
X Si x

x x
X

x
X

x Si x

x
Holes are the majority carriers in P-type semiconductors thus it is an acceptor semiconductor.
Conduction is by movement of holes. Holes move in the direction of conventional current.

N – type
This is formed by adding pentavalent impurities e.g. phosphorous, arsenic, antimony.
Silicon 2:8:4
Phosphorous 2:8:5
x

x Si x

x
X

Free electron

X
x X x

x Si x
X X P X x
X Si x

x x
X

x
X

x Si x

x
Majority charge carriers are electrons and thus conduction is by electron flow. Electron flow
is opposite to the direction of flow of conventional current.

Terms and concepts

Charge Amount of current passing through a given point for a given time.
It is the ability to attract or repel electrons.
Q = It

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Current Is the rate of flow of charge. SI unit is Amperes (A)
I = Q/t

Voltage Is the energy which drives charge across a circuit. It is also called
electromotive force (emf). SI unit is volts (V)

Potential difference Is the energy which drives charge across a component in a circuit.
SI unit is also V

Power Rate of energy dissipation in a component. Is the amount of energy

dissipated in a conductor carrying a current of 1A. If the p.d across the
conductor 1V
P = Voltage*Current = IV
SI unit is Watts (W)

RESISTORS.
Resistor A resistor is a passive component which apposes the flow of current in Q
circuit
R

Passive component (i) Does not add strength to a signal

(ii) Does not require power to operate

Active components e.g. diodes, transistor require power to operate and strength to a signal

Resistance (R) represented by the unit [Ω]. This is the opposition to the flow of current.

Factors affecting resistance of a conductor

Area
Length

(a) Length (m) R α L

(b) Cross sectional Area R α L
A
(c) Resistivity (symbol ρ) and units (Ωm) R α ρ
(d) Temperature

The formula for resistance is

COLOUR CODING

1st No Tolerance
2nd No Multiplier

4 colour Band resistor

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Number Colour Multiplier Tolerance
0 Black 100
1 Brown 101 + 1%
2 Red 102 + 2%
3 Orange 103
4 Yellow 104
5 Green 105
6 Blue 106
7 Violet 107
8 Grey 108
9 White 109
- Gold 10-1 + 5%
- Silver 10-2 + 10%
- No. band - + 20%

Resistor color coding is the process of representing resistance of resistor using colour bands.
The colour bands are indicated on the surface of the resistor.
Colour coding comes in 2 types: 4 colour resistors
5 colour resistors
For 4 colour band resistors the 1st colour band represent the 1st Number, 2nd colour
representing the 2nd no, 3rd colour band representing multiplier / no of zeros, last colour band
representative tolerance.

Tolerance is the deviation from the exact value and can be represented by %. For a five
colour band resistor the 1st 3 bands representing the numbers, the fourth represents the
multiplier, the last represents the tolerance.

Converting from colour bands to resistance

Orange, Brown, Blue, Silver
3 1 x 106 + 10%

Range due to tolerance gives 31 x 106 + 31 x 105

= 27.9 x 106 to 34.1 x 106 Ω

Convert from resistance to colour bands

(i) 36 x 106 Ω + 1%

Orange, Blue, Yellow, Brown

(ii) 845678 + 10%

This can be approximated to 850000 + 10% = 85 x 104 + 10%

This gives the following Grey, Green, Yellow, Silver

(iii) 4K54 + 2%
This is equivalent to 4.5 x 103 + 2% = 45 x 102 + 2%
This gives the following colour code Yellow, Green, Red, Red

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(iv) Give the values and the tolerances of the resistors below if the color-codes from right to
left are.
i. Brown, Orange, Black, Red
Solution:

Red, Black, Orange, Brown

2 0 103 1%
20  10  1%
3

ii. Yellow, brown, Green

Solution:

Green, Brown, Yellow

5 1 104 20%
51 10 4  20%

Ohms Law
The current passing through a conductor is proportional to the voltage applied across it
provided all external factors are constant.

V
IXR

Resistor circuits
The circuit shown below has the resistors connected in series.
IR1
R1 R2 R3

VR1 VR2 VR3

Vs

Thus

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Thus

Example
Three resistors R1 = 900R, R2 = 5K8, R3 = 7M4 are connected in series across voltage
supply of 200V

(a) Calculate the total resistance (b) calculate the total current (c) Determine the current
passing through each of the resistors (e) Voltage across each resistor

Solution
(a)

(b)

(c)

Parallel Circuit

(a)

Therefore

(b)

(c)

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(d)

Combined circuit
Example

(a) Total Resistance (c) Current through each resistor

(b) Total Current (d) Voltage through each resistor

Solution

(a)

(b)
(c)

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Example
Obtain the number of 2-watt resistors and their resistance value needed to yield an equivalent
1000 10-watt resistor.

Solution:
Series:
Total wattage 10
No of resistors    5 resistors
Wattage for one reisistor 2
Rt  R1  R2  R3  R4  R5  5R
1000  5R
1000
R  200
5
Parallel:
Total wattage 10
No of resistors    5 resistors
Wattage for one reisistor 2
1 1 1 1 1 1 5 1
      
Rt R1 R2 R3 R4 R5 R 1000
R  1000  5  5000

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Constant voltage source

Ri – Internal resistance
RL – Load resistance

Ri << RL

It is a voltage source which has very low internal resistance / impedance as compared to the
external impedance/ load resistance i.e. Ri << RL

2nd Case

RL
Ri

DC

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Constant Current Source

It has a very high internal resistance / impedance as compared to external / load resistance /
impedance

1st Case

2nd case

RL
Ri

If you short circuit constant voltage source get a constant current source

THEVENIN’S THEOREM

A
RL
RTh
Complex
RL
Network

B DC VTh

A complex network with resistance and voltage sources can be converted to a single resistor
Rth in series with a single voltage source VTh where RTh is the total resistance obtained when

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looking into the complex network after the voltage sources have been replaced by their
internal resistances or short circuits, when point A and B is open. VTh is the voltage across the
two terminals A and B when the load resistance is removed

General case
Convert the circuit below to Thevenin’s equivalent circuit.

R1 R3

RL
R2
Vs

Step 1 Get RTh

Open RL, short circuit the source and look into the network then get RTh.
R1 R3
A

R2

Step 2 Get VTh

R1 R3
A

R2
DC Vs

B
No current flow through terminals AB thus no current flow through R3.

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 RL
RTh

VTh

NORTONS THEOREM

A RL
RN
Complex IN
RL
Network

Norton’s theorem states that a complex network with several resistance and several voltage
sources can be converted to a single current source IN in parallel with a single resistor RN.

General case
R1 R3

RL
R2
Vs

Short RL and calculate the current passing through the short circuit IN. Note that RN = RTh
R1 It R3 IN

RL
R2
Vs

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Using current divider theorem the value for IN can be calculated as shown below

RN = RTh
R1 R3
A

R2

RL
RN
IN

Example
10Ω 10Ω
R1 R3

40v 20Ω R2 10Ω R4

Calculate the current passing through R4 using Norton’s Theorem.

Solution
Step 1: Short-circuit R4

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 R1 It R3 IN

R2
Vs

20//10

Step 2: Find RN

Short-circuit the source

R1 R3

R2

The final circuit is shown below

IN=1.6A RN=16.67Ω R4=10Ω

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Analysis of a circuit having more than one voltage source
I1 I3

R1 R3
I2

Vs R2 Vs

Mesh analysis
Example
I1 I3

10R 30R
I2

Loop Loop
30V 1
20R 2 50V

Calculate the values for I1, I2 and I3 in the circuit shown above.
Solution
Using Kirchoff’s current law the two loops have the following expressions

but

Therefore

Simplifying and eliminating I3 results in

I1 = 0.4545 A, I2 = 1.273 A and I3 = 0.8185 A

Factors considered when selecting a resistor

o Resistance value
o Power rating
o Tolerance
o Accuracy
o Durability
o Stability

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 o Flexibility
o Quality

Resistor Types
Resistors can be broadly categorized as fixed, variable, and special-purpose. Each of these
resistor types is discussed in detail with typical ranges of their characteristics.

Fixed Resistors
The fixed resistors are those whose value cannot be varied after manufacture. Fixed resistors
are classified into composition resistors, wire-wound resistors, and metal-film resistors.

Wire-Wound Resistors. Wire-wound resistors are made by winding wire of nickel-chromium

alloy on a ceramic tube covering with a vitreous coating. The spiral winding has inductive
and capacitive characteristics that make it unsuitable for operation above 50 kHz. The
frequency limit can be raised by noninductive winding so that the magnetic fields produced
by the two parts of the winding cancel.

Composition Resistors. Composition resistors are composed of carbon particles mixed with a
binder. This mixture is molded into a cylindrical shape and hardened by baking. Leads are
attached axially to each end, and the assembly is encapsulated in a protective encapsulation
coating. Color bands on the outer surface indicate the resistance value and tolerance.
Composition resistors are economical and exhibit low noise levels for resistances above 1
MW. Composition resistors are usually rated for temperatures in the neighborhood of 70°C
for power ranging from 1/8 to 2W. Composition resistors have end-to-end shunted
capacitance that may be noticed at frequencies in the neighborhood of 100 kHz, especially for
resistance values above 0.3 MW.

Metal-Film Resistors. Metal-film resistors are commonly made of nichrome, tin-oxide, or

tantalum nitride, either hermetically sealed or using molded-phenolic cases. Metal-film
resistors are not as stable as the wire-wound resistors. Depending on the application, fixed
resistors are manufactured as precision resistors, semiprecision resistors, standard general-
purpose resistors, or power resistors. Precision resistors have low voltage and power
coefficients, excellent temperature and time stabilities, low noise, and very low reactance.
These resistors are available in metal-film or wire constructions and are typically designed
for circuits having very close resistance tolerances on values. Semiprecision resistors are
smaller than precision resistors and are primarily used for current-limiting or voltage-
dropping functions in circuit applications. Semiprecision resistors have long-term
temperature stability. General-purpose resistors are used in circuits that do not require tight
resistance tolerances or long-term stability. For general-purpose resistors, initial resistance
variation may be in the neighborhood of 5% and the variation in resistance under full-rated
power may approach 20%. Typically, general-purpose resistors have a high coefficient of
resistance and high noise levels. Power resistors are used for power supplies, control circuits,
and voltage dividers where operational stability of 5% is acceptable. Power resistors are
available in wire-wound and film constructions. Film-type power resistors have the advantage
of stability at high frequencies and have higher resistance values than wire-wound resistors
for a given size.

Variable Resistors
Potentiometers. The potentiometer is a special form of variable resistor with three terminals.
Two terminals are connected to the opposite sides of the resistive element, and the third

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connects to a sliding contact that can be adjusted as a voltage divider. Potentiometers are
usually circular in form with the movable contact attached to a shaft that rotates.
Potentiometers are manufactured as carbon composition, metallic film, and wire-wound
resistors available in single-turn or multiturn units. The movable contact does not go all the
way toward the end of the resistive element, and a small resistance called the hop-off
resistance is present to prevent accidental burning of the resistive element.

Rheostat. The rheostat is a current-setting device in which one terminal is connected to the
resistive element and the second terminal is connected to a movable contact to place a
selected section of the resistive element into the circuit. Typically, rheostats are wire-wound
resistors used as speed controls for motors, ovens, and heater controls and in applications
where adjustments on the voltage and current levels are required, such as voltage dividers and
bleeder circuits.

Special-Purpose Resistors
Integrated Circuit Resistors. Integrated circuit resistors are classified into two general
categories: semiconductor resistors and deposited film resistors. Semiconductor resistors use
the bulk resistivity of doped semiconductor regions to obtain the desired resistance value.
Deposited film resistors are formed by depositing resistance films on an insulating substrate
which are etched and patterned to form the desired resistive network. Depending on the
thickness and dimensions of the deposited films, the resistors are classified into thick-film
and thin-film resistors.
Semiconductor resistors can be divided into four types: diffused, bulk, pinched, and ion-
implanted.
Diffused semiconductor resistors use resistivity of the diffused region in the semiconductor
substrate to introduce a resistance in the circuit. Both n-type and p-type diffusions are used to
form the diffused resistor.

CAPACITORS
A component constructed from conductive plate and dielectric in between them and can be
used to store charge. Capacitance is the ability of a capacitor to store charge.
Capacitance is measured in farads (F).
Factors affecting capacitance include

(a) Dielectric material (ε)- Permittivity is the ability of material to allow an electronic field
to pass through, the extent to which a material affects magnetic field
εr = Relative permittivity , ε0 = permittivity of free space 8.854 x 10-12 F/m or

Ceramic capacitor electrolytic capacitor

(b) Capacitance is directly proportional to the effective area of the plates. C
(c) Capacitance is inversely proportional to the distance of separation between the plates.

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Charging and discharging of capacitors
Charging

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Series Connection of Capacitors

Therefore

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Parallel Connection of Capacitors

Therefore

Energy stored in a capacitor is given by

Effect of capacitor on alternating current

Capacitive reactance (Xc) is the opposition of flow of a.c by a capacitor. It is expressed using
(Ω). The formula for capacitive reactance is

Notice that the formula is dependent of frequency thus no current will pass through when
using direct current since frequency is equal to zero.

Types of Capacitors
Capacitors are used to filter, couple, tune, block dc, pass ac, bypass, shift phase, compensate,
feed through, isolate, store energy, suppress noise, and start motors. They must also be small,
lightweight, reliable, and withstand adverse conditions. Capacitors are grouped according to
their dielectric material and mechanical configuration.

Non-electrolytic capacitors
Ceramic Capacitors
Ceramic capacitors are used most often for bypass and coupling applications. Ceramic
capacitors can be produced with a variety of K values (dielectric constant). A high K value
translates to small size and less stability. High-K capacitors with a dielectric constant >3000
are physically small and have values between 0.001 to several microfarads.
Good temperature stability requires capacitors to have a K value between 10 and 200. If high
Q is also required, the capacitor will be physically larger. Ceramic capacitors with a zero
temperature change are called negative-positive-zero (NPO) and come in a capacitance
range of 1.0 pF to 0.033 mF. An N750 temperature-compensated capacitor is used when
accurate capacitance is required over a large temperature range. The 750 indicates a 750-ppm
decrease in capacitance with a 1°C increase in temperature (750 ppm/°C). This equates to a
1.5% decrease in capacitance for a 20°C temperature increase. N750 capacitors come in
values between 4.0 and 680 pF.

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Film Capacitors
Film capacitors consist of alternate layers of metal foil and one or more layers of a flexible
plastic insulating material (dielectric) in ribbon form rolled and encapsulated.

Mica Capacitors
Mica capacitors have small capacitance values and are usually used in high-frequency
circuits. They are constructed as alternate layers of metal foil and mica insulation, which are
stacked and encapsulated, or are silvered mica, where a silver electrode is screened on the
mica insulators.

Paper-Foil-Filled Capacitors
Paper-foil-filled capacitors are often used as motor capacitors and are rated at 60 Hz. They
are made of alternate layers of aluminum and paper saturated with oil that are rolled together.
The assembly is mounted in an oil filled, hermetically sealed metal case.

Electrolytic Capacitors
Electrolytic capacitors provide high capacitance in a tolerable size; however, they do have
drawbacks. Low temperatures reduce performance, while high temperatures dry them out.
The electrolytes themselves can leak and corrode the equipment. Repeated surges above the
rated working voltage, excessive ripple currents, and high operating temperature reduce
performance and shorten capacitor life. Electrolytic capacitors are manufactured by an
electrochemical formation of an oxide film on a metal surface. The metal on which the oxide
film is formed serves as the anode or positive terminal of the capacitor; the oxide film is the
dielectric, and the cathode or negative terminal is either a conducting liquid or a gel.

Aluminum Electrolytic Capacitors. Aluminum electrolytic capacitors use aluminum as the

base material. The surface is often etched to increase the surface area as much as 100 times
that of unetched foil, resulting in higher capacitance in the same volume. Aluminum
electrolytic capacitors can withstand up to 1.5 V of reverse voltage without detriment. Higher
reverse voltages, when applied over extended periods, lead to loss of capacitance. Excess
reverse voltages applied for short periods cause some change in capacitance but not to
capacitor failure. Large-value capacitors are often used to filter dc power supplies. After a
capacitor is charged, the rectifier stops conducting and the capacitor discharges into the load,
until the next cycle. Then the capacitor recharges again to the peak voltage. The De is equal
to the total peak-to-peak ripple voltage and is a complex wave containing many harmonics of
the fundamental ripple frequency, causing the noticeable heating of the capacitor.

Tantalum Capacitors. Tantalum electrolytics are the preferred type where high reliability and
long service life are paramount considerations. Tantalum capacitors have as much as three
times better capacitance per volume efficiency than aluminum electrolytic capacitors,
because tantalum pentoxide has a dielectric constant three times greater than that of
aluminum oxide. The capacitance of any capacitor is determined by the surface area of the
two conducting plates, the distance between the plates, and the dielectric constant of the
insulating material between the plates. In tantalum electrolytics, the distance between the
plates is the thickness of the tantalum pentoxide film, and since the dielectric constant of the
tantalum pentoxide is high, the capacitance of a tantalum capacitor is high. Tantalum
capacitors contain either liquid or solid electrolytes. The liquid electrolyte in wet-slug and
foil capacitors, generally sulfuric acid, forms the cathode (negative) plate. In solid-electrolyte
capacitors, a dry material, manganese dioxide, forms the cathode plate.

Compiled by Omae Oteri-JKUAT 27

Foil Tantalum Capacitors. Foil tantalum capacitors can be designed to voltage values up to
300 V dc. Of the three types of tantalum electrolytic capacitors, the foil design has the lowest
capacitance per unit volume and is best suited for the higher voltages primarily found in older
designs of equipment. It is expensive and used only where neither a solid-electrolyte nor a
wet-slug tantalum capacitor can be employed. Foil tantalum capacitors are generally designed
for operation over the temperature range of –55 to +125°C (–67 to +257°F) and are found
primarily in industrial and military electronics equipment.

Solid-electrolyte sintered-anode tantalum capacitors differ from the wet versions in their
electrolyte, which is manganese dioxide. Another variation of the solid-electrolyte tantalum
capacitor encases the element in plastic resins, such as epoxy materials offering excellent
reliability and high stability for consumer and commercial electronics with the added feature
of low cost. Still other designs of “solid tantalum” capacitors use plastic film or sleeving as
the encasing material, and others use metal shells that are backfilled with an epoxy resin.
Finally, there are small tubular and rectangular molded plastic encasements. Wet-electrolyte
sintered-anode tantalum capacitors, often called “wet-slug” tantalum capacitors, use a pellet
of sintered tantalum powder to which a lead has been attached. This anode has an enormous
surface area for its size. Wet-slug tantalum capacitors are manufactured in a voltage range to
125 V dc.

INDUCTORS
An inductor is a device which can store magnetic energy. It’s made from a coiled wire.

Circuit symbol
Inductance is the ability to store magnetic energy. It is measured in Henrys (H).

Inductance depends on several factors

(a) No. of turns

(b) Medium surrounding the inductor/core and its permeability(µ). Permeability is the
ability of a material to affect the magnetic field H
(c) Geometry of the conductor
(d) Cross sectional area

Self –Inductance
This is the ability of material / coil to induce emf at the surroundings

Mutual inductance
This is the process by which changing voltage in a conductor induces emf in a second
conductor which is in the opposite direction (Lenz’s Law)

Compiled by Omae Oteri-JKUAT 28

Types of inductors

Compiled by Omae Oteri-JKUAT 29

Transformers
Ip Is

Vp Np Ns Vs

core
Rp Rs

A transformer is a device which can change the level of voltage from high to low or vice
versa. It is made from 2 coils wound on a core close to each other sometimes on top of the
other. It uses mutual induction to operate.
The phase difference between the primary coil and secondary coil voltage is 1800 as shown in
the diagram below.

Vs

time

Vp

time

For an ideal transformer input power = output power (Pp= Ps) since there is no power loss.

For practical transformer Pp > Ps. This necessitates the definition of efficiency of a
transformer which is the ratio of output power to input power.

where is efficiency
Losses in a transformer
(a) Heat losses
(b) Eddy currents leakage current
(c) Hysteresis due to magnetization of the core
(d) Mechanical losses e.g. sound

Step-up transformer Step-down transformer

Ip Is Ip Is

Vp Np Ns Vs Vp Np Ns Vs

Compiled by Omae Oteri-JKUAT 30

Np<Ns, Vp < Vs and Ip> Is Np>Ns, Vp >Vs and Ip< Is

Transformation Ratio

This is the ratio by which the voltage is transformed.

Example
A transformer has the following parameters: NP = 400, NS = 2000, VS = 20V, Ip = 0.5A, 𝜂 =
90%. Find Is

Compiled by Omae Oteri-JKUAT 31

SEMICONDUCTOR DIODES

P N
Anode Cathode

Circuit symbol
Depletion
Layer

A diode is a device which allows current to flow only in one direction. It is made from P –
type and N – type semiconductors joined together. It has a depletion layer/ P – N junction /
potential barrier.

Formation of the depletion layer

Depletion layer is formed when a p – type and n- type semiconductor are joined. The
electrons in the n – type semiconductor adjacent to the p – type semi conductor more to fit in
the holes which are also at the junction. This results to the creation of positive and negative
ions which don’t have any charge carriers. This section is referred to as a depletion layer. It
can also be called a potential barrier since the positive ions on the n– side are at a higher
potential than the negative ions in the p - side. The movement of ions process is called
diffusion.

The diffusion process stops after some time because the positive ions will repel the holes and
the negative ions will repel the electrons.
Holes

e e

e e Electrons

e e

e e

e e

e e

Depletion
Layer

Vo= 0.3 V

Biasing of a Diode
Forward bias

Compiled by Omae Oteri-JKUAT 32

This is where the anode is connected to the power supply while the cathode is connected to
the negative terminal. This leads to a continuous supply of electrons and continuous supply of
holes at the junction which makes current to flow therefore the bulb lights up.

Germanium starts conducting at 0.2 – 0.3v, silicon 0.6 – 0.7v. The depletion layer disappears.

Reverse Bias

The anode is connected to negative terminal while the cathode is connected to positive
terminal of power supply. The width of the depletion layer is enlarged due to majority charge
carriers (electrons) moving away from the junction.

There’s only minimal current which flows in the diode due to minority charge carriers. This
current is referred to as leakage current and is expressed in terms of µA which cannot make
the bulb light up.

VI characteristics of a diode

If
Germanium Silicon

Breakdown
Voltage

VR Leakage
0.2v 0.7v Vf
Knee voltage
current

Si Ge

IR

Compiled by Omae Oteri-JKUAT 33

In the forward bias connection germanium starts conducting at 0.2V while silicon starts
conducting at 0.7V. Further to increment of voltage leads to corresponding increment of
current and the diode behaves like a normal conductor. The voltage at which the diodes start
conducting current is called knee voltage. In reverse bias, when the voltage is at zero there is
a very small amount of current which flows called leakage current. Increment of voltage does
not affect that current if it is within the limit the diode can withstand. The current in a diode is
affected by temperature.

If the voltage is increased beyond a point where the diode cannot withstand it breaks down.
The minority electrons moving at high speed detach the electrons which are bonded thus
breaking down the junction. This point can be called breakdown voltage or peak inverse
voltage (PIV). The electrons at this point are called avalanche electrons. This current can
damage the diode.

Diode static equation

i0 - Diode current
I0 - Temp dependant saturation current
VD - Diode terminal voltage
𝜂 - Empirical constant Ge = 1, Si = 2
VT -Thermal voltage

k = Boltzmann’s constant = 1.38 x 10-28 J/K

T= Absolute temp
q = 1.6 x 10-19 C

Diode parameters

Using Thevenin’s theorem

Compiled by Omae Oteri-JKUAT 34

No current flows through RL

RTh can be calculated using the diagram below.

Rs

ID

RTh D

VTh RL

rdc – d.c. resistance

Plot a load line superimposed in characteristics of a diode. The d.c load line crosses the x axis
at VTh and y-axis at VTh / RTh. The x axis has VD and the y axis has ID.

Compiled by Omae Oteri-JKUAT 35

 ID

VI characteristics of a diode
DC loadline

IDQ Q point

VDQ VD
A Q point (quiescent point) gives the operating parameters of a diode or transistors

Note that ID represents d.c while id represents small signal a.c. quantities.

Idc
Id

time

rac - a.c resistance

iD

RTh D

VTh RL

iD

Compiled by Omae Oteri-JKUAT 36

 ID

DC loadline

ID2
IDQ
ID1

VDQ VD
VD1 VD2

rac =

Diode Models
Approximate Model
If

0
V0 Vf
Vo rf D
Simplified Model
If

0
V0 Vf
Vo D
Ideal Model
If

D
0
Vf

Vo – Turn on voltage 0.3V – Germanium

0.6V- 0.7V - Silicon

Compiled by Omae Oteri-JKUAT 37

Example
Rs

100Ω

20V Vs R 200Ω RL 500Ω

Draw the load line of the circuit.

Rs

100Ω

20V Vs R 200Ω 500Ω RL

Calculate the value for RTh

100Ω

200Ω

Compiled by Omae Oteri-JKUAT 38

Thus when iD = 0, VD = VTh

VD=0,

ID

0.2
DC loadline

IDQ Q point

VDQ 13.33 VD

Example

10Ω D 20Ω
Ge

20V Si Si
D2 D3
50Ω

Calculate the dissipation of power in the 20Ω resistor.

Take Ge= rf = 1Ω
Si = rf = 2Ω

Solution
Equivalent circuit

Compiled by Omae Oteri-JKUAT 39

 10Ω 0.3V 1Ω 20Ω 0.7V 0.7V

20Ω 20Ω
20V Si
Si
D2 D3
50Ω

The D2 and D3 equivalent resistance

Equivalent potential drops across the silicon diodes is 0.7V

10Ω 0.3V 1Ω 20Ω

0.7V

20V
1.962Ω

Types of Diodes
(a) LED

Circuit symbol

A light emitting diode (LED) is a diode which emits light when forward voltage is applied
across it. It is a transducer which changes bacterial energy to light energy

Construction
It is constructed using materials such as Gallium arsenide and Gallium phosphide. They can
produce different colours depending on the materials used.

Compiled by Omae Oteri-JKUAT 40

Gallium arsenide – Red
Gallium phosphide – Green

Operation
It is operated in the forward – bias mode .When forward voltage is applied, electrons in the
conduction band move to the valence band to fill the holes. In the process they emit light
energy

Characteristic Curve
Luminosity
(mW)

0 If (mA)
Voltage rating – 1 – 3 V
Current rating – 20 – 10mA

Applications
1. Digital displays e.g. seven segment
2. Indicators (power)
3. Networks (fiber optics) since it converts electrical energy to light energy.

PHOTODIODE

Circuit symbol

A photodiode is a diode made from photoconducting material such as germanium that

changes light energy to electric energy. It is therefore a transducer.

Construction
It is made from p-type and n-type semiconductors which are sensitive to light energy. They
have a large surface area compared to normal diodes.

Operation
Doping is higher than other diodes to increase reverse bias current. It is always operated in
reverse bias. When a reverse voltage is applied electrons move from the valence band to the
conduction band increasing the conductivity of the material. These are minority charge
carriers.

Compiled by Omae Oteri-JKUAT 41

 Characteristic Curve
IR
(µA)

0 E (light Intensity)
(mW/cm2)
IR
(µA)

light Intensity

0 VR

Dark current where RR is the dark resistance

Applications
1. Automatic switching systems
2. Alarm circuits
3. Fiber optic networks to change light energy to electric energy
4. Counting

Factors affecting light intensity

1. Light intensity
2. Applied voltage
3. Material of the photodiode
4. Surface area

TUNNEL DIODE

Circuit symbol
A tunnel diode is a diode exhibits negative resistance between 2 points of forward voltage

Construction
It is very highly doped which makes the depletion layer small in size as a result electrons can
move across the junction with application of minimal voltage or no voltage at all. This is
called tunneling effect.

Compiled by Omae Oteri-JKUAT 42

Operation
If

Ip
Iv

0 Vp Vv

When forward voltage is applied due to tunneling effect there will an increment of current up
to a peak point. After that the tunneling effect reduced which leads to a decrement of current
up to a valley point. Further increment of voltage from this point leads to a corresponding
increment of current where the diode stars behaving like a normal diode.

Applications
1. Oscillators e.g. in tuning circuits
2. Fast switches

VARACTOR DIODE

circuit symbol
A varactor diode is a diode which behaves like a variable capacitor.

Construction

Plate

P N

Dielectric
materials
Depletion
Layer

The p - type and n – type semiconductors act as the plates, P – N junction as the electric
material and length of junction as distance between the plates.

Operation
It is operated on reverse bias mode. When you increase the reverse bias voltage the thickness
of the depletion layer is increased resulting in a reduction of the effective capacitance and
vice – versa.

Compiled by Omae Oteri-JKUAT 43

 C
(capacitance)

VR
Applications
(a) Tuning circuit log with inductors

where fr is resonance frequency

Compiled by Omae Oteri-JKUAT 44

LINEAR POWER SUPPLY
filter
input output
Smoothing Stabilising
Transformer Rectifier
circuit circuit
V V

0 t 0 t

RECTIFIERS
A rectifier is made from rectifier diodes which have a high power rating and peak inverse
voltage/ breakdown voltage. The most common material used to make these diodes is silicon

There are two types

(a) Half Wave Rectifier
(b) Full Wave Rectifier

Half wave – rectifiers (HWR)

Input RL Output

I
(current)

input

time

output

π 2π 3π 4π 5π time

Operation
During the first half cycle the diode is forward biased allowing current to pass through and
therefore an output can be from the resistor R L. During the second half cycle the diode is
reverse biased as a result no current passes through and there is no output appearing at R L.

Only the positive half cycles are appearing at the output and are referred to as ripples whose
frequency is the same as that of the input waveform.

Compiled by Omae Oteri-JKUAT 45

Average value (output)

Rms value of a.c output current

Therefore

rf << RL , 𝜂 = 0.405
= 40.5% is the efficiency of a half-wave rectifier
Ripple Factor
Ripple factor is the ratio of ac to dc current (
I
(current)

0
π 2π 3π 4π 5π time

ac

dc

time

Effective rms value

Compiled by Omae Oteri-JKUAT 46

Full-wave Rectifier
(a) Centre-Tapped Rectifier
D1

Output
Input RL

D2

I
(current)

input

time

output
D1 D2 D1 D2 D1

π 2π 3π 4π 5π time

Operation
When the input waveform is positive going i.e. first half cycle D1 is forward biased and D2 is
reverse biased. There will be an output at R L as a result of D1. During the second half cycle
D2 is forward biased and D1 is reverse biased. There will be an output as a result of D2.

The two currents are in the same direction and therefore they appear on the positive side of
the time – line as ripples whose frequency is twice that of the input waveform.

Average value

Compiled by Omae Oteri-JKUAT 47

Rms value of a.c output current

Therefore

Efficiency of a full wave rectifier

rf << RL , 𝜂 = 0.811
= 81.1% is the efficiency of a full-wave rectifier

The full wave rectifier thus has very high efficiency

Ripple Factor
Ripple factor is the ratio of ac to dc current (

Compiled by Omae Oteri-JKUAT 48

Bridge Rectifier

D
D

2
Output
Input RL

4
3

D
I
(current)

input

time

output
D2D3 D1D4 D2D3 D1D4 D2D3

π 2π 3π 4π 5π time

During the first half cycle D2 and D3 are forward biased while D1 and D4 are reverse biased
therefore an output will appear at RL as a result of D2 and D3. During the second half cycle
diode D1 and D4 are forward biased while diodes D2 and D3 are reverse biased therefore there
will be an output at RL is as a result of D1 and D4.

The currents are in the same direction in the resistor RL therefore they will appear on the
positive side of the time – line. They are also called ripples and have a frequency twice that
of the input waveform.

Example
A half- wave rectifier with transformer of transformation ratio of 10:1 has the following
parameters.
Vin = 250sin wt V
rf = 20 Ω
RL = 800 Ω
Calculate
Vm, Idc, Iac, Pdc, 𝜂, Vdc, ripple factor

Smoothing circuits (filter)

This is a section in the power supply which removes the a.c component present in the output
of a rectifier. It is made using of capacitors and inductors or a combination of both.

(a) Capacitor filter

(b) Choke input (inductor)
(c) Capacitor input filter

Compiled by Omae Oteri-JKUAT 49

Capacitor Filter

Input RL output

Half-wave rectifier

I
(current)

0
π 2π 3π 4π 5π time

a b a b

Capacitor filter

a – Charging
b – Discharging
It consists of a capacitor and a resistor connected in parallel. During the appearance of the
first ripple the capacitor will charge to a maximum Vm. The ripple will collapse very fast
leaving the capacitor to discharge. Because the capacitor takes a longer time to discharge
when the second ripple appears it finds the capacitor still discharging and picks up from there
charging the capacitor again to a maximum Vm. The process continues so long as there is an
input to the filter

This will result to an output with more of DC component than the input waveform

Full wave rectifier

I
(current)

input
0
π 2π 3π 4π 5π time

output

a b a b time

The operation is the same as that of a half-wave rectifier, the only difference being that the
output of full-wave rectifier filter has more d.c component than the half waveform rectifier

Compiled by Omae Oteri-JKUAT 50

filter. To get a more refined d.c, several circuits of the same kind can be connected after the
first circuit.

Ripple factor is less than of half – wave rectifier i.e. ripple factor HWR > FWR

Choke Input Filter

L

Input C RL output

I
(current)

input
0
π 2π 3π 4π 5π time

output

time

It consists of an inductor in series with a parallel combination of a capacitor and resistor. The
inductor will oppose some of the a.c component present in the input. Whatever passes
through the inductor is bypassed by the capacitor C. Therefore there will be a minimized a.c
at the output. The d.c passes through the inductor without opposition and goes straight to the
output since it cannot pass through the capacitor.

Capacitor input filter (Π filter)

Input C1 C2 RL output

Compiled by Omae Oteri-JKUAT 51

 I
(current)

input
0
π 2π 3π 4π 5π time

output

time

The first capacitor C1 bypasses of the a.c component present at the input. Whatever is left is
blocked by the inductor L and whatever passes through the inductor is bypassed by C2. The
dc component passes through the inductor to the output. This results to a more refined d.c
component. Several combinations of the circuit can produce even more refined d.c
component.

Stabilizing circuit / voltage regulator

It is constructed by use of zener diode or a transistor or both.

Zener diode circuit symbol

A zener diode uses the principle of reverse breakdown to provide a constant output voltage.

Construction
The doping is higher than that of normal diodes. This will make it to breakdown without
getting damaged. It breaks down earlier than the other diodes depending on the reverse
voltage rating. It has a higher power rating

Operation
It is operated in reverse bias mode. If the voltage is increased beyond breakdown voltage the
diode breaks down. Any further increment of voltage will still give a constant output voltage
as shown in the diagram below.

Compiled by Omae Oteri-JKUAT 52

 If

Zener
Breakdown
Voltage

Leakage
VR current
Vf

IR

In forward bias it behaves like any other diode conducts at (Si – 0.7V, Ge- 0.3V). In reverse
bias the diode breaks down when there is an increase of voltage beyond breakdown voltage.
Only a small amount of current flows through before breakdown voltage called leakage
current.

It is connected together with an external resistor to limit amount of current related to diode
the rating.

Equivalent circuit of the zener diode

Iz

Z V V Iz=0

In the on state the zener diode is replaced by zener voltage or breakdown voltage
In off state it is replaced by an open circuit and assuming the leakage current Iz = 0

Zener Diode circuits Analysis

Compiled by Omae Oteri-JKUAT 53

Off state

V > VZ
On state

Example

R = 500Ω
RL= 800Ω
Vs = 40V
Vz = 15V

Calculate IRL, It, Iz, Pz in the on state and It in the off state.
Solution

On state

Off state

It in off and on state is different. In the on state diode bypasses most of the current shorting
the resistor RL.

Compiled by Omae Oteri-JKUAT 54

 R

25V Vz RL

Voltage Clipping
V one side

50V
input

time

output

25V

5π time

25V
RL output
25V

25V
RL output
25V

Voltage Clipping
both sides

time

5π time

Compiled by Omae Oteri-JKUAT 55

TRANSISTORS
A transistor is an active device which can increase the strength of a signal. It is manufactured
by use of p – type and n – type semiconductor materials.
Transistor = Transfer resistor

a) Types BJT – Bipolar junction transistor – Linear amplifier to boost an electrical signal
- Electronic switch
b) FET - Field effect transistor

Bipolar Junction Transistor

It is constructed by sandwiching n– type materials between 2 p – type materials or a p-type
material between 2 n – type materials. It used electrons and holes as charge carriers.
It has 2 junctions J1 and J2
It has 3 terminals: Emitter
Base
Collector
The emitter emits the majority charge carriers, collector collects the charge carriers, the base
controls those charge carriers moving from the emitter to the collector.

There are two types of BJT transitors

(i) PNP
(ii) NPN

NPN Transistor
Construction
C

E N P N C
B

B E

E C

It is constructed by sandwiching a p – type material between 2 n – type materials. It is like 2

diodes connected back to back. The arrows in the circuit symbol indicate the direction of
current when the transistor is in operation. The emitter is heavily doped so that it can emit a
large amount majority charge carriers (electrons).

The base is very thin and very lightly doped so as to allow majority charge carriers to move
from the emitter to the collector with minimal time possible and reduce the base current by

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reducing the amount of charge comes recombining when the features above increase the
collector current and reduce the base current. (Transistor amplifier)

The collector is larger in size than the other two and moderately doped. Large size makes it
able to dissipate large amount of power without getting damaged. Moderate doping also
reduced the amount of power dissipated.

Operation

++
more
positive
C

IE J1 J2 IC
+ve E N P N C
B
IB

E B
-ve

For a transistor to effectively operate the base emitter junction is supposed to be forward –
biased while the collector-base junction is reverse biased. This is done by connecting the
emitter to negative potential, the base to positive potential and the collector to more positive
potential.

The negative potential at the emitter repels the electrons which are the majority charge
carries. As they reach the base very few of them will combine with holes to form the base
current IB (5%). The rest will be attracted by the more positive potential at the collector and
then they pass through the base to form the collector current (95% /98%)

Base and collector cannot be interchanged due to doping levels

Using KCL IC + IB = IE

Compiled by Omae Oteri-JKUAT 57

PNP transistor
Construction
C

E P N P C B

B E

E C

B
The n – type semiconductor is sandwitched between 2 p- type semiconductors. It is like 2
diodes connected front to front. The direction of the arrow in the circuit symbol indicates the
direction of current when the transistor is in operation.
The size and doping levels for the emitter, base and collector are the same as those of the
NPN transistor.

Operation

-- more
negative
C

-ve
J1 J2
B
E N P N C

E
B
+ve
The B – E junction is forward biased while the collector – base junction is reverse biased.
This is done by connecting the emitter at the positive potential, the base to a negative
potential and collector to a more negative potential.
The positive potential at E repels the holes which are majority charge carriers which move
through the base by being attracted by the more negative potential at the collector. A few of
those charged carriers will recombine at the base to form IB (base current 2% - 5%) while the
rest move through to the collector to form the collector current (95%)

Compiled by Omae Oteri-JKUAT 58

Using KCL
IE = IC + IB
100% 95% 5%

Transistor modes of connection (configurations)

A transistor has 3 terminals and since the input has 2 terminals and the output 2 terminals,
one of the transistor terminals is made to be common so that the input and output can be
measured. The common terminal is usually connected to the ground.

All the common connections should maintain a forward bias for the B – E junction and a
reverse bias for the C – B junction. The configurations are given by common base (CB),
Common emitter (CE) and common collector (CC). They can be used for different
applications.

1. Common Base (CB) connection

IE IC

VEE input output

IB

Negative potential obtained by rectification on lower side of the time line. The base is
common to the input and the output.

Parameters

Input Output

Input current = IE Output current = IC

Input voltage = VBE Output voltage = VCB

Input resistance = Output resistance =

Input power = Output power =

Current gain =
is the measure of the quality of a transistor, the higher the value of , the better the
transistor in the sense that the collector current more closely equals the emitter current.

Compiled by Omae Oteri-JKUAT 59

Parameter Instantaneous d.c Total
Emitter I ie IE iE
Collector I ic IC iC
Base I ib IB iB
BE voltage vbe VBE vBE
Hybrid hib hIB hIB

Reverse voltage gain = voltage gain =

Input impedance = hI Output impedance = = hOB

Output admittance = ho
Forward current gain = hf
Reverse voltage gain = hRB

Power gain =

Av = Voltage gain
Ai = Current gain
Power gain in decibels (dB) = 10 log10 Ap
Voltage gain in dB = 20 log10 Av
Current gain in dB = 20 log10 Ai

Application of CB - connection : Impedance matching

2. Common Emitter (CE) configuration

C
output
B 12V

Input E
5V

In this case the emitter is common to the input and output therefore it is grounded.
Parameters

Input Output
Input current = IB Output current = IC
Input voltage = VBE Output voltage = VCE

Input resistance = Output resistance =

Input power = Output power =

Compiled by Omae Oteri-JKUAT 60

Current gain = - Forward current gain of common emitter configuration

hOE =

Reverse voltage gain =

This connection is used for impedance matching where the output has a lower impedance. It
is mostly applied where a gain is required.

Common Collector Connection

E
output
VCC
B
Input C
VCB

Input Output
Input current = IB Output current = IE
Input voltage = VCB Output voltage = VCE

Input resistance = Output resistance =

Input power = Output power =

IE = IB + IC
= IB + βIB = (1+β)IB
Output current = (1+β) x input current
Gain

Current gain =

Voltage gain = Reverse Voltage gain

Applications
(i) It can be used in current gain or power gain circuit
(ii) It can be used for impedance matching to isolate two circuits.

Compiled by Omae Oteri-JKUAT 61

Relationship between current gains

IE = IC + IB
(i) α in terms of β

(ii) β in terms of α

Leakage Current
Transistors (BJT)

Leakage current is caused by the flow of minority charge carriers in a transistor and flows in
the PN junction in the common base connection.
Leakage current
N P N ICBO
E B C

ICBO

ICBO leakage current is the current which flows from C to B when the emitter is open.
ICBO
N P N
E B C

ICBO

IB

IE IC

Majority minority
Carriers carriers

Compiled by Omae Oteri-JKUAT 62

Similarly

ICBO – Collector- to- base leakage current

ICBO is exactly like the reverse saturation current Is of a reverse biased diode.
ICBO is extremely temperature dependent i.e. it doubles for every 100C rise for germanium and
60C for silicon.

Collector Emitter Open

ICEO
ICEO

IC

N
N
IB
P
P

N N

ICEO ICEO

IE

IC is magnified by a factor of 1+β

IE =IC + IB = βIB + ICEO + IB

IE= (1+β)IB + ICEO = (1+β)IB + ICEO

Thermal Runaway
This is a situation where an increment of current leads to an increment of temperature in a
semiconductor. The increment of temperature in turn leads to an increment of current, the
process continues and if not kept in control can damage the transistor.

Si = 100C rise in temperatures doubles the current

Ge = 60C rise in temperature doubles the current

Compiled by Omae Oteri-JKUAT 63

TRANSISTOR STATIC CHARACTERISTICS
There are VI characteristics of transistors connected in different configurations. They help in
determining the optimal operation of a transistor.

They are

(i) Input characteristics - Graph of input current against input voltage

(ii) Output characteristics - Graph of output current against output voltage
(iii) Transfer characteristics - Graph of output current against input current

Common base
(i) Input characteristics

A A
R1 R2
VEE VEB V VCC
V VCB

The input characteristics are given by the input current (IE) against input voltage (VBE) for a
constant value of output voltage VCB.
First, VCB is kept at a constant value while VBE is varied by the use of R1. The corresponding
IE is noted and a curve is drawn
IE
(mA) VCB = constant
6
Germanium Silicon

0.5 1 VBE (V)

It behaves like a forward biased diode since the input base-emitter junction is forward biased.
When VBE is increased the transistor will start conducting at 0.7V (Si). Further increment of
VBE will lead to a corresponding increment of IE.

Admittance =

Compiled by Omae Oteri-JKUAT 64

(ii) Output Characteristics
IE is kept constant while VCB is varied in discrete steps and IC is measured.

IC
(mA) Avalacnhe
Breakdown
8

6
IE = 2 mA

4
Active
IE = 0 mA

2
Cutoff
ICBO

5 10 15 20 VCB (V)
Saturation
Region

The graph can be used to get α. IC is practically independent of VCB over the working range.
IC

VCB= constant

ICBO

IE

Gain can be calculated from the curve.

Common Emitter Connection

A VEE

R1 A R2
VBB VCC
V V VCB

Input characteristics
This is a plot of IB against VBE for constant VCE. VCC is kept at a constant value while VBE is
varied at appropriate steps as IB is measured for the corresponding steps.

Compiled by Omae Oteri-JKUAT 65

 IB
(µA)
40
VCE is constant

30

20
ΔIB
10 ΔVBE

0.5 1 VBE (V)

When VCE = 0, the base – emitter junction is forward biased. The junction behaves as forward
biased diode. At a constant value of VBE when VCE is increased, the width of the depletion
region at the collector-base junction will increase and hence the width of the base will
decrease. This effect causes a decrease in base current IB, therefore the curve shifts to the
right as VCE increases. The curve is exactly the same as that of a forward biased diode where
with increment of VBE the transistor starts conducting at 0.7V (silicon) or 0.2V (Ge). Further
increment of VBE results in a corresponding increment of IB. The graph can be used to
determine the input admittance or impedance where from initial stages of the curve the
resistance is high (4kΩ) which reduces as VBE increases.

Output characteristics
Ic
(mA) Saturation Breakdown
Region Region
8
Saturation IB = 40 µA
Line IB = 40 µA
6 IB = 40 µA
IB = 40 µA
IB = 40 µA

4
Active
Region

ICEO Cutoff Region

5 10 15 20 VCE (V)

For IB = 0 and VCE the only current passing the transistor is leakage current ICEO. When
VCE is increased there is in further increment of IC and the transistor cannot hold any more
and as a result it breaks down. If IB is increased from zero to a few volts of VCE the transistor
will be in saturation mode. The curves will be similar to the one of IB = 0

Compiled by Omae Oteri-JKUAT 66

Regions of Transistor Operation
Saturation region
This is where VCE = 0 up to a few volts ( ).Both the collector-base junction and base-
emitter junction are forward biased and therefore the collector is collecting all the electrons
emitted by the emitter. The transistor behaves like a switch which is on

Cut off region

This is where IB = 0. Both junctions are reverse biased therefore only a small leakage current
flows through which is called ICEO. The transistor behaves like a switch which is off.

Active Region
This is where VCE range from a few volts to around 30V depending on the type of transistor.
IB is also slightly above 0. The transistor is normally biased where the collector base junction
is reverse biased while the base-emitter junction is forward biased. Most of the applications
of the transistor use this region to operate e.g. amplification.

Breakdown region
VCE is beyond 30V depending on the type of transistor. The base-emitter junction is forward
based while collector-base junction reverse biased. At this part the transistor breakdown
resulting to uncontrollable flow of current. This is called avalanche breakdown

Transfer Characteristics
IC
mA
VCE - constant

ΔIC

ΔIB

ICEO

IB (µA)
It is a plot of IC against IB. When IB = 0, IC has got some value which is referred to as leakage
current ICEO. This graph can be used to determine the forward current gain for collector-
emitter connection.

Common Collector Connection

A
R1 A R2
VBB VEE
V V VCB

Compiled by Omae Oteri-JKUAT 67

Input Characteristics

IB

VCE = 2V VCE = 4V

0 2 4 VCB (V)

VCE = VCB + VBE

It is a plot of IB against VCB while VCE is kept constant. VCE is dependent on both VCB and
VBE by the use of the following relation

VCE = VCB + VBE

If VCE is kept constant and VCB is increased VBE will reduce up to a point where VCB is equal
to VCE. IB will be given by zero. The graph can be used to determine the input impedance
and reverse voltage gain.

Output Characteristics
Ic
(mA) Saturation Breakdown
Region Region
8
IB = 30 µA

4
Active
Region

2 IB = 0 µA

Cutoff Region

5 10 15 20 VCE (V)

This is a plot of IE against VCE while IB is kept constant. The plot is exactly same as that of
the output characteristics for the collector-emitter junction connection because IE is almost
equal to IC. This graph can be used to determine impedance or admittance and forward
current gain for the common collector connection.

Compiled by Omae Oteri-JKUAT 68

Transfer Characteristics
IE
mA
VCE - constant

ΔIE

ΔIB

ICEO

IB (µA)

Methods of transistor biasing

This is the process of connecting a transistor voltage supplies together with resistors so that it
can operate normally. The collector-base junction is reverse biased and base-emitter junction
is forward biased. The methods of biasing a transistor are listed below.

(i) Base bias

(ii) Base Bias with emitter feedback
(iii) Base Bias with collector feedback
(iv) Base Bias with collector and emitter feedback
(v) Emitter Bias with two supplies
(vi) Voltage divider bias

Base Bias
VCC
IB IC
RB RC

VBE VCE

Vc
VB VE

VC = VCE Stability factor s = 1 + β

Compiled by Omae Oteri-JKUAT 69

Base Bias with Emitter Feedback
VCC
IB IC
RB RC

VBE VCE

Vc
VB RE VE

Negative feedback-output is fed back to input

Base Bias with Collector Feedback

VCC
IC+ IB
RC
RB IB

IC
VCE
VBE Vc

VB VE

Compiled by Omae Oteri-JKUAT 70

Equations

Base Bias with Collector and Emitter Feedbacks

VCC
IC+ IB
RC
RB IB

IC
VCE
VBE Vc

VB RE
VE
IE

Emitter bias with 2 power supplies

Compiled by Omae Oteri-JKUAT 71

 + VCC

RC
IC

RE
RB IE

-VEE

Voltage divider bias

+ VCC

RC
RB1 IC

RE
RB2 IE

-VEE

VCC

RB1

RB2 Look into the base

Compiled by Omae Oteri-JKUAT 72

 RB1

RB2 Look into the base

Rth

Vth

+ VCC

RC

Rth = RB RE

Vth = VBB

Compiled by Omae Oteri-JKUAT 73

Single Stage Amplifier

+ VCC

RC
RB1 IC + ic ic
Vo
ib C1 IB+ib C2

Vs
RB2 RL
RE C3
IE ie

Decoupling circuit

RB1, RB2 – Potential dividers where RB1 is used to reverse bias the collector-base junction and
RB2 is use to forward bias the base-emitter junction.
RC and RL are used to facilities the collection of the output signal
RE is used to feedback any changer in IC so as to stabilize the bias condition

V2 = VBE + IERE

C1 - Blocks any direct current from the source

C2 - Blocks any direct current from appearing at the output
C3 (decoupling capacitor) - Bypasses high frequency alternating current signal to the ground
which interferes with the bias condition if fed back.

Since then has a very large value thus there is a large current gain from the base to
the collector in the common emitter configuration.

D.C load line

This is a line drawn on the output characteristics of a transistor connection and for common
emitter connection it gives all the possible values of IC and VCE depending on the load seen
by IC. It is developed by opening all the capacitors and shorting all the a.c sources.

Compiled by Omae Oteri-JKUAT 74

 + VCC

RC
RB1
C1 C2

Vs
RB2 RL
RE C3

+ VCC

RC
RB1

RE
RB2

Using the common emitter equation

y = mx + c m= ,c=

x-intercept IC VCE = VCC VCE(cutoff) = VCC

y-intercept VCE

Compiled by Omae Oteri-JKUAT 75

 IC

IC (sat)

dc loadline

VCC VCE

Operating point/ Q – point / Quiescent point / silent / Quiet point

This is the point at which the transistor operates without the a.c signal. The point at which the
line of the current IB intersects with the load line gives the operating point. It is located at the
middle of the load line for the optimum transistor operation.

This way the maximum possible swing of an a.c signal can be obtained

D.C load and a.c signal

IC

IC (sat) IB
50µA
40µA
ICQ 30µA
20µA
10µA
0µA

VCEQ VCC VCE

Compiled by Omae Oteri-JKUAT 76

 IC
IC (sat)

ICQ

VCEQ VCC

IC(sat) - ICQ < ICQ

When the operating is close to IC(sat) then clipping of the output waveform will occur due to
saturation

IC
IC (sat)

ICQ Q point

VCEQ
VCC= VCE cutoff

IC(sat) - ICQ > ICQ

Max = 2ICQ

When IC is increasing from the Q – point, VCC is decreasing since the load line has a negative
gradient. When the operating point is close to VCE (cutoff) clipping starts occurring due to
cutoff value of VCE.

Compiled by Omae Oteri-JKUAT 77

A.C load line
This is the line which give the different value of ic and vce depending on the load as seen by
iC. (iC = IC (d.c) + ic (a.c)). It is the line which obtained by adding a small signal to the already
biased circuit.

A.C equivalent circuit

Obtained by: shorting all capacitors
Grounding all d.c sources

Ic1 Ic2
Ib
RC RL

Vs
RB1 RB2 Ie

a.c load (Rac)

Rac < Rdc (always)

IC

IC (sat)

ICQ

VCEQ VCC VCE

Compiled by Omae Oteri-JKUAT 78

Vpp = 2ICQRac
Vpp = 2VCEQ

For clipping not to occur, then the lesser value is considered.

IC

ICQ + VCEQ
Rac

ac loadline

VCEQ + ICQRac VCE

Since Rac < Rdc the gradient of the a.c load line is steeper.

Causes of transistor Q – point variation

+ VCC

RC
RB1
C1 C2

Vs
RB2 RL
RE C3

(i) If any of the resistors of the amplifiers is faulty. Then resistors go faulty they became
open
If RC or RE =

the transistor is in cutoff.

If RB2 then the transistor is off

(ii) If any of the capacitors goes faulty the capacitor becomes a short
(iii) High temperature can cause thermal runway.
(iv) Change of transistor

Compiled by Omae Oteri-JKUAT 79

Stability Factor
This is the rate of change of IC with respect to ICBO

where IB and β are kept constant.

Common Emitter configuration

RB – Resistance on the base side

RE – Resistance on the emitter side

Design of a single stage Low Power Amplifier

Specifications
Current through RB1 and RB2, I1 IB
IC = 2mA (if > 2mA then clipping occurs hence to faithful amplification)
(if > 15mA then the transistor burns out)

IC should be more than a.c signal by 20% to avoid clipping e.g. if the Q point is changed

Example
If a common emitter circuit connection has the following parameters: VCC =9V, VCE = 3V,
VBE = 0.3V, I1=10IB, IC =2mA, RC = 2.2 kΩ and β =50. Determine RB1, RB2 and RE.

Solution
Using the common emitter equation

Compiled by Omae Oteri-JKUAT 80

Example
Hence determine the coordinates of the operating point and the stability factor S in a common
emitter germanium transistor amplifier circuit, shown below, the bias is provided by self bias,
i.e. emitter resistor and potential divider arrangement. The various parameters are: VCC=16 V,
RC=3kΩ, RE= 2kΩ, RB1=56 kΩ, RB2=20 kΩ and α=0.985.

VCC

RC
RB1 vo

C2
vi Q1
C1

RB2
RE
c 3

Solution:
For a germanium transistor, VBE=0.3V. As α=0.985,
 0.985
   66
1   1  0.985
To find the coordinates of the operating point
R2 20  10 3
Thevenin’s voltage, VT  VCC   16  4.21V
R1  R2 76  10 3
R1 R2 20  10 3  56  10 3
Thevenin’s resistance, RB    14.737 k
R1  R2 76  10 3
The loop equation around the base circuit is
I I 
VT  I B RB  VBE  I B  I C RE ,  C RB  VBE   C  I C  RE
  
IC  1 
4.21   14.737  10 3  0.3  I C   1  2  10 3
66  66 
3.91
3.91  I C 0.223  2.03  10 3 . Therefore, I C   1.73 mA
2.253  10 3
Since IB is very small I C  I E  1.73 mA , Therefore, VCE  VCC  I C RC  I E RE

Compiled by Omae Oteri-JKUAT 81

 VCC  I C RC  RE   16  1.73  10 3  5  103  7.35V
Therefore, the coordinates of the operating point are I C  1.73 mA and VCE  7.35V .
To find the stability factor S.
R 14.737
1 B 1
RE
S  1     1  66 2  7.537
RB 14.737
1   1  66 
RE 2

Problem
Given the following values for a common emitter circuit: RB1=47 , RL= 10 RB2 = 10
, RC = 3.3 RE = 2 , VCC = 20V

(i) Draw d.c and a.c load lines and determine operating point.
(ii) Determine whether the transistor is operating close to the saturation or cut off.

Problem
Explain the operation of various biasing methods and their advantages and disadvantages.
Use suitable expressions where necessary.

Compiled by Omae Oteri-JKUAT 82

UNIPOLAR TRANSISTOR / FIELD EFFECT TRANSISTOR
 Generally FET is a 3-terminal unipolar solid state device in which current is
controlled by an electric field.
 There are 2 types of FETS
o Junction FET (JFET).
o Metal oxide semi-conductor FET (MOSFET).
 Both can either be: P-channel or
N-channel

JUNCTION FIELD EFFECT TRANSISTOR

Drain (D) Drain (D)

N-channel P-channel

P P N N
Gate (G) Gate (G)
(Always reverse biased) (Always reverse biased)
D D

G G

Source (S) S Source (S) S

N-channel cct symbol P-channel cct symbol
Fig (a): N-channel Fig (b): P-channel

 As an illustration an N-channel is fabricated by diffusing 2-P type junctions on

opposite sides of N-type semi-conductor material as shown in fig (a).
 These junctions form 2 PN diodes called gates and the area between them is called a
channel.
 The 2 P-type regions are internally connected and a single lead is brought out called
the gate terminal.
 Direct connections are made at the two ends of the bar.
 One is called the source terminal (S) and the other drain terminal (D).

Operation
 The gates are always reverse biased and therefore the gate current Ig is practically
zero.
 The source terminal is always connected to that end of the drain supply which
provides the necessary charge carriers.
 As an example an N-channel JEET is discussed when either VGS or VDS or both are
changed.

a) When VGS=VDS=0V.

Compiled by Omae Oteri-JKUAT 83

 Drain (D)

Uniform depletion layer

N

P P
Gate (G)

Source (S)

 Since VDS=0 the drain current ID=0 thus depletion regions around the PN junction are
equal in thickness and symmetrical.

b) When VGS=0 and VDS is increased from zero.

Depletion layer
D
N

VDD
VDS
P P
G

ID
VGS
S

 Electrons which are the majority charge carriers flow through the channel from the
source to the drain.
 Due to this flow there is a uniform voltage drop across the channel resistance.
 This voltage drop acts as reverse bias at the gate.
 The gate is more negative with respect to those points which are nearer to the drain
than those to source, therefore the depletion regions penetrates more deeply into the
channel at points which lie closer to the drain than source.
V
I D  DS
RDS
As VDS is increased, the current ID increases up to a maximum value IDSS (saturation
current).
 At this stage ID=IDSS which is constant.
 Under this condition the channel cross-sectional area becomes minimum and the
channel is said to be pinched off and the corresponding value of VDS is called pinch
off voltage (VP).
 In case VDS is increased beyond this point, VP, ID does not increase. It remains
constant until the JFET breaks down and ID increases to an excessive value.

Compiled by Omae Oteri-JKUAT 84

c) When VDS=0 and VGS is decreased from zero.

Depletion layer
D
N

VDD
VDS
P P
G

VGS
VGG S
Channel blocked

 VGS is made more negative, increasing the gate reverse bias and therefore increasing
the thickness of depletion.
 As VGS is increased to the -ve, a point is reached when the 2 depletion regions touch
one another and the channel is cut off.
 This value of VGS that cuts the channel off is called VGS(off)

d) When VGS is -ve and VDS is increased.

 As VGS is made more -ve, values of VP as well as breakdown voltage are decreased.
 N/B: Since the gate voltage controls the main current, JFET is called a voltage
controlled device.
 A P-channel JFET operates exactly in the same manner as N-channel except that
channel carriers are holes, and the polarities of both VDD and VGS are reversed.

JFET CHARACTERISTICS
1. Drain characteristics
2. Transfer characteristics

Drain Characteristics
ID
Breakdown region

Ohmic Pinch-off region

region (Saturation)
IDSS
B C
A

0 VP VA VDS

a) Ohmic Region
 ID varies directly with VDS following ohms law where the transistor behaves like
resistor.

b) Pinch-off / Saturation region

 This is also called the amplifier region where ID is relatively independent of VDS.

Compiled by Omae Oteri-JKUAT 85

  In this region, the drain current is given by the following equation;
2
 V 
I D  I DSS 1  GS 
 VP 
2
 V 
I D  I DSS 1  GS 
 V 
 GS ( off ) 

 A transistor operated in this region is a like a switch which is on.

c) Breakdown Region
 It is also called the avalanche region.
 ID increases to an excessive value.

d) Cut off region

 This is the region where the transistor is not conducting where VGS = VGS(off).
 A transistor operated in this region is a like a switch which is off.

Transfer characteristics
ID

IDSS

VD=constant

VGS VGS(off) 0

 This shows that when VGS=0, ID=IDSS and when ID=0, VGS=VGS(off).
 The characteristics approximately follows the equation;
2
 V 
I D  I DSS 1  GS 
 V 
 GS ( off ) 

MOSFET OR IGFET (insulated Gate FET)

 There are 2 types and are given by depletion enhancement MOSFET (DE) and
enhancement only MOSFET.

DE MOSFET
 It is called so because it can be operated both in depletion mode and enhancement
mode by changing the polarity of VGS.

Compiled by Omae Oteri-JKUAT 86

Construction
Drain (D) Drain (D)

P substrate N substrate
SS SS
Gate (G) N-channel Gate (G) P-channel
D D
SiO2 SiO2

G G

S S
N-channel cct symbol P-channel cct symbol
Source (S) Source (S)
Fig (a): N-channel Fig (b): P-channel

 As shown the gate is insulated from its conducting channel by an ultra thin metal
oxide insulating film of silicon dioxide.
 The MOSFET is different from JFET in that the gate voltage that controls ID can both
be +ve and -ve unlike the JFET which is always reverse biased.
 Silicon dioxide and the channel form a parallel plate capacitor.

Operation
a) Depletion mode of N-channel (DE MOSFET)

SiO2
VDD
SS VDS
N P
G

Metal gate
VGS
VGG S

 When VGS=0 electrons flow from the source to the drain through the conducting
channel.
 When the gate has -ve voltage, it depletes the N-channel off it electrons by inducing
+ve charge in it; therefore the greater the -ve voltage on the gate, the greater is the
reduction of electrons in the channel and therefore less conductivity.
 Too much of -ve voltage i.e. VGS can cut off the channel and this voltage is called VGS
(off).

Compiled by Omae Oteri-JKUAT 87

b) Enhancement mode of the N-channel

SiO2
VDD
SS VDS
N P
G

Metal gate
VGS
VGG S

 When +ve voltage is applied to the gate the input gate capacitor creates free electrons
in the channel which increases ID.
 This increased number of electrons increases or enhances the conductivity of the
channel.
 As the +ve gate voltage is increased, conductivity of source to drain is increased and
therefore the current flowing increases.

Characteristics of a DEMOSFET
a) Static characteristics
ID
Breakdown region
VGS =+2V
Ohmic Pinch-off region
(Saturation) Enhancement mode
IDSS region VGS=0
B C Depletion mode

A VGS =-2V

VGS(off)
0 VP VA VDS
Leakage current

 It acts in the enhancement made when the gate is +ve with respect to the source and in
the depletion mode when the gate is -ve.

Compiled by Omae Oteri-JKUAT 88

b) Transfer characteristic
ID

Depletion mode
Enhancement mode
IDSS

-VGS VGS(off) 0 +VGS

 For a given VDS, ID flows even when VGS=0 but keeping VDS constant as VGS is made
more -ve, ID decreases till it becomes zero at VGS=VGS(off).
 When used in the enhancement mode, ID increases as VGS is increased +vely.

ENHANCEMENT ONLY N-CHANNEL MOSEFET (NMOS)

Construction
Drain (D) Drain (D)

N P
Gate (G) Gate (G)
P substrate SS N substrate SS
D D
N P
SiO2 SiO2
G G

S S
N-channel cct symbol P-channel cct symbol
Source (S) Source (S)
Fig (a): N-channel Fig (b): P-channel

 There is a channel between the source and the drain which has a P substrate cutting
into it.
 It operates with the +ve gates only.

Operation
 When VGS = 0, ID is non-existent.
 For ID to flow a significant +ve gate voltage must be applied.
 This voltage produces a thin layer of electrons close to the metal oxide film which
stretches from the source to the drain.
 This thin layer provides the channel with electrons hence N-types material referred to
as N-type inversion layer or a virtual N-channel.

Compiled by Omae Oteri-JKUAT 89

 D

N
SiO2
VDD
G SS VDS
P

N
Metal gate
VGS
VGG S

 The minimum gate source voltage which produces the N-type inversion layer is called
threshold voltage VGS(th).
 For a given VDS as VGS is increased, the virtual channel deepens and ID increases
therefore;
I D  K VGS  VGS (th) 
2

Where k is constant which depends on a particular MOSFET.

Characteristics of an N-channel enhancement only MOSFET

a) Static characteristics.
ID
Breakdown region
VGS =+2V
Ohmic Pinch-off region
(Saturation) Enhancement mode
IDSS region VGS=0
B C Depletion mode

A VGS =-2V

VGS(off)
0 VP VA VDS
Leakage current

 Electrons which are the majority charge carriers flow through the channel from
the source to the drain.
 Due to this flow there is a uniform voltage drop across the channel resistance.
 This voltage drop acts as reverse bias at the gate.
 The gate is more negative with respect to those points which are nearer to the
drain than those to source, therefore the depletion regions penetrates more deeply
into the channel at points which lie closer to the drain than source.
V
 I D  DS
RDS
 As VDS is increased, the current ID increases up to a maximum
value IDSS (saturation current).
 At this stage ID=IDSS which is constant.
 Under this condition the channel cross-sectional area becomes minimum and the
channel is said to be pinched off and the corresponding value of VDS is called
pinch off voltage (VP).

Compiled by Omae Oteri-JKUAT 90

  In case VDS is increased beyond this point, VP, ID does not increase. It remains
constant until the JFET breaks down and ID increases to an excessive value.

b) Transfer characteristic.
ID

Enhancement mode
ID Flows only when VGS
exceeds threshold voltage VGS(th)

0 VGS(th) +VGS

 For ID to flow a significant +ve gate voltage must be applied.

 It starts conducting at VGS=VGS(th).
 As VGS is increased further there is a corresponding increment of ID.
This increment follows the following formula.
I D  K VGS  VGS (th) 
2

Where k is constant which depends on a particular MOSFET.

Parameters considered when purchasing JFET(s)

 The gate source breakdown voltage.
 The gate reverse leakage current.
 The gate source cut-off voltage.
 The drain current at zero gate voltage.
 The forward trans-conductance.
 The input capacitance.
 The switching consideration.
 The drain source on resistance.
 Power rating.

Parameters considered when purchasing MOSEFET(s)

 Breakdown voltage.
 Forward trans-conductance.
 Drain source on resistance.
 Switching characteristics.
 Zero gate voltage drain current.
 Input capacitance.

BIASING OF FETS
JFET (DC Biasing)
 It can be biased using either;
o Separate power source VGG.
o Some form of self biasing.
o Source biasing.
o Voltage divider bias.

Compiled by Omae Oteri-JKUAT 91

a) A separate power source VGG.
VDD

RD

vo

C2
vi Q1
C1

RG
RS
c
S

-VGG

VDD  I D RD  VDS  I S RS
VGG  I G RG  VGS  I S RS
VGG  VGS  I S RS since I G  0

b) Self biasing
VDD

RD

vo

C2
vi Q1
C1

RG
RS
c
S

VDD  I D RD  VDS  I S RS
VS  I S RS
VD  VDD  I D RD or VDS  I S RS
I G RG  VGS  I S RS  0
VGS   I S RS since I G  0
 VGS bias is obtained from the flow of drain current ID through RS and VS=ISRS and
VGS=-ISRS.
 The gate is kept at this much -ve potential (voltage) with respect to the ground.
 Addition of RG does not upset this d.c bias because no gate current flows through it
apart from the gate leakage current.
 Without RG the gate would be floating which would collect some charge and cut off
the JFET.
 Also RG serves the purpose of avoiding short circuiting of the a.c input voltage Vin.

Compiled by Omae Oteri-JKUAT 92

c) Source Biasing
VDD

RD

vo

C2
vi Q1
C1

RG
RS

-VSS

VD  VDD  I D RD
VSS  I G RG  VGS  I S RS
VSS  VGS  I S RS since I G  0

d) Voltage divider biasing

VDD

RD

R1 vo

C2
vi Q1
C1

R2
RS
c S

VDD  VR2  VR1

VDD  I D RD  VDS  I S RS
VDD
VR2   R2
R1  R2
VR2  VGS  I D RS

Compiled by Omae Oteri-JKUAT 93

Example
Find the values of VDS in the circuit below if ID=4mA, VDD=12V, RD=1k5 and RS=500R.
VDD

RD

vo

C2
vi Q1
C1

RG
RS
c S

VS  I S RS  4  10 3  500  2V
VD  VDD  I D RD
VD  12  1.5  10 3  4  10 3  6V
VDS  VD  VS  6  2  4V

Example
In the amplifier given in the figure below VDD=20V, R1=15.7MΩ, R2=1MΩ, RD=3kΩ,
RS=2kΩ and IDQ=1.5mA. Calculate VGSQ and VDSQ.
VDD

RD

R1 vo

C2
vi Q1
C1

R2
RS
c S

VDD 20
VR2   R2   1  1.2V
R1  R2 15.7  1
VR2  VGSQ  I D RS
VGSQ  VR2  I D RS  1.2  1.5  10 3  2  103  1.8V
VD  VDD  I D RD  20  1.5  10 3  3  103  15.5V
VS  I S RS  1.5  10 3  2  103  3V
VDS  VD  VS  15.5  3  12.5V

Compiled by Omae Oteri-JKUAT 94

BIASING OF E-ONLY MOSFETS
a) Drain Feedback Bias.
VDD

RD

vo
RG
C2
vi Q1
C1

VGS  VDS
VD  VDD  I D RD  VDS

b) Voltage Divider Bias.

VDD

RD

R1 vo

C2
vi Q1
C1

R2
RS
c S

VDD  VR2  VR1

VDD  I D RD  VDS  I S RS
VDD
VR2   R2
R1  R2
VR2  VGS  I D RS

 Since for this MOSFET VGS must be greater than VGS(th), it can be biased only in 2
ways i.e. drain feedback bias and voltage divider bias.
 For both cases, the gate voltage is made more +ve than the source by an amount
greater than VGS(th).

Example
For the E-MOSFET amplifier given above (voltage divider bias) ID=4mA, VGS=10V,
R1=6kΩ, R2=9kΩ, RD=1kΩ, RS=0Ω, VDD=25V and VGS(th)=5V. Calculate VGS and
VDS for the circuit.

Compiled by Omae Oteri-JKUAT 95

 VDD 25
VR2   R2   9  15V
R1  R2 96
VR2  VGS  15V
ID 4  10 3
K   0.16mA / V 2
VGS  VGS (th ) 
2
10  52

I D  0.16(15  5)  16mA 2

VDS  VDD  I S RS  25  16  10 3  1 103  9V

Exercise
An N-channel E-MOSFET has the following parameters: ID on=4mA at VGS=10V and
VGS(off)=5V. Calculate the ID for VGS=8V. Ans. 1.44mA.

FET AMPLIFIERS
DE MOSFET Amplifier
VDD

RD

vo

C2
vi Q1
C1

RG

ID

Output signal

-VGS VGS(off) 0 +VGS

Input signal

 A zero biased N-channel DEMOSFET with an a.c source capacitor coupled to the
gate is given above.
 The input a.c Vin causes VGS to swing above and below its zero value therefore
producing a swing in ID.

Compiled by Omae Oteri-JKUAT 96

  The -ve swing in VGS produces depletion and ID is decreased.
 A +ve swing in VGS produces enhancement mode making ID to increase.

E-MOSFET Amplifier
 The gate is biased with a +ve voltage such that VGS is more than VGS(th).
 The signal voltage produces a swing in VGS below and above its Q point value.
 This in turn causes a swing in ID and hence in IDRD.
VDD

RD

R1 vo

C2
vi Q1
C1

R2
RS
c S

ID

Input signal

0 VGS(th) +VGS

Input signal

FET CONFIGURATIONS
Common Source (CS)
VDD
vout
D

vin G
S

Input parameters
 Input voltage=VGS
 Input current=IG
 Input impedance VGS/IG
 Input power=IGVGS

Compiled by Omae Oteri-JKUAT 97

Output Parameters
 Output voltage=VDS
 Output current=ID
 Output impedance=VDS/ID
 Output power=IDVDS

 Current gain =ID/IG

 Voltage gain =VDS/VGS

Common Drain (CD)

VSS
vout
S
vin G
D

Input parameters
 Input voltage=VDG
 Input current=IG
 Input impedance VDG/IG
 Input power=IGVDG

Output Parameters
 Output voltage=VDS
 Output current=IS
 Output impedance=VDS/IS
 Output power=ISVDS

 Current gain =IS/IG

 Voltage gain =VDS/VDG

Common Gate (CG)

VDD
vout
vin D
S
G

Input parameters
 Input voltage=VGS
 Input current=IS
 Input impedance VGS/IS
 Input power=ISVGS

Output Parameters
 Output voltage=VDG
 Output current=ID

Compiled by Omae Oteri-JKUAT 98

  Output impedance=VDG/ID
 Output power=IDVDG

 Current gain =ID/IS

 Voltage gain =VDG/VGS

Applications of FETS(s)
 Input amplifiers in oscilloscopes, electronic voltmeters and other measuring and
testing equipment because of the very high Rin (input resistance), which reduces the
loading effect to the minimum.
 Logic circuits where it is kept off when there is a zero input while it is turned on with
very little power input e.g. OR, NAND, AND & NOR gates.
 Mixer operations of FM and T.V receivers.
 Voltage variables resistors in operational amplifiers (OP-AMPS).
 Large scale integration IC’s and computer memories because they come in small
sizes.

SILICON CONTROLLED RECTIFIER (SCR) (THYRISTOR)

Anode (A)

P
J1 A
N
Gate (G) J2
P G
J3
N

Cathode (C) C
Circuit symbol

 It is a 4 layer P-N-P-N device which is basically a rectifier with a controller element.

 It consists of 3 diodes connected back to back with a gate connection.

Construction
 It is a 3 terminal 4 layer transistor with the layers being alternately of P-type and N-
type silicon.
 It has 3 junctions J1, J2 and J3 and the 3 terminals are given by the anode, cathode and
the gate.
 The function of the gate is to control the firing of the SCR.

Biasing
 With the polarity of the source as shown in (a) J 1 and J3 are forward biased while J2 is
reverse biased hence no current except leakage current flows through the SCR.
 With polarity as shown in (b) J1 and J3 are reverse biased while J2 forward biased.
Again no current flows through the SCR.
 However if the anode voltage in (a) is increased to a critical value called the forward
break-over voltage VBO is reached when J2 breaks down and SCR suddenly switches
to a highly conducting state.

Compiled by Omae Oteri-JKUAT 99

 A A
P P
J1 J1
N N
J2 J2
P P
G J3 G J3
N N
C C

Fig. (a) Fig. (b)

 Conduction can also be achieved by connecting the gate to a given voltage which
forward biases J2.
 In this condition the SCR has little forward resistance of the range 0.1 to 1.2Ω and the
voltage drop across it is very low, about 1V.
 For the case of (b) where the current flow is blocked by the 2 reverse biased junctions,
when V is increased, a point is reached when zener breakdown occurs which may
destroy the SCR.
 Therefore the SCR is a unidirectional device.
 This can be shown in the characteristics curve given below:-
IF Output signal
IH is min I for SCR to conduct

On state

Gate voltage
Leakage current Leakage current
IH
VR 0 VBO VF

Off state
Early gate triggering

Zener breakdown IR

Two transistor analogy

 Its operation can be described using 2 transistor analogy therefore the SCR can be
split into 2 three-layers as shown in (a) and represented using transistors as shown in
(b).
 From (b) it can be noted that:
The collector current of Q1 is also the base current of Q2 and the base current of Q1 is
the collector current of Q2.

Compiled by Omae Oteri-JKUAT 100

 Anode (A)
A
IE1
P IB1
PNP
N Q1
Gate (G)
P N
IC1 IC2
NPN P IB2
G
N Q2

IE2
Cathode (C)

Fig (a) Fig (b) C

 If the voltage applied across A and C is increased such that J 2 breaks down then the
current through the device rises and therefore IE1 begins to increase and then;
o IC1 increases.
o Since IC1=IB2, IB2 also increases.
o Therefore IC2 increases.
o IC2=IB1 hence IB1 increases.
o Consequently both IC1 and IE1 increase, therefore a regenerative action occurs
whereby an initial increment in current produces further increase in the same
current. Soon a maximum current is reached limited by external resistance.
o The 2 transistors are fully turned on and the voltage across them falls to very low
values.
 The typical turn on time is 0.1 to 1.0 µs.

Firing and triggering of SCR

S A
A
G G
AC
C
C

(a) dc firing circuit (b) pulse signal circuit

 It is operated normally with anode voltage slightly less than VBO forward break- over
voltage and is triggered into conduction by a low power gate pulse.
 Once it’s on the gate has no control on the device current.
 This gate signal can be a d.c firing signal or a pulse signal.
 For (a) when the switch is open the SCR does not conduct and the lamp is off. When
the switch is closed, a +ve voltage is applied to the gate which forward biases the
centre the centre PN junction and the SCR is made to conduct and the lamp is on.
 The SCR remains in the conduction state until the supply voltage is removed
 Once fired the SCR remains on even when the triggering pulse is removed, therefore a
number of techniques are used to turn it off and they are given by:-
o Anode current interruption.
o Reversing the polarity of anode-cathode voltage.
o Reducing current through the SCR below the holding current IH and this is
referred to as low current drop out.

Applications
 Power control.

Compiled by Omae Oteri-JKUAT 101

  Relay controls.
 Regulated power suppliers.
 Static switches.
 Motor control.
 Invertors.
 Battery charges.
 Heater controls.
 Phase controls.

Phase control
Load

A i/p
SCR R 0
AC V G IG Conduction
C
D o/p
0
time
Load waveform

 The gate triggering is driven from the supply. The variable resistor R limits the gate
current during the +ve half cycle of the supply.
 If R is set to a low value, the SCR will trigger almost immediately at the beginning of
the +ve half cycle of the input.
 But if R is set to high resistance, the SCR may not switch on until the peak of the +ve
half cycle.
 By adjusting R between the two extremes, the SCR is made to switch on somewhere
between the beginning and peak of the positive half cycle between 0 and 90º.
 N/B: If IG is not enough to trigger the SCR at 90º, then the device will not trigger at
all.
 The diode D is used to protect the gate from -ve voltage which would otherwise be
applied to it during the -ve half cycle.
 Therefore at the instant SCR switch on:

V  VD  VG  I G RL
R
IG

Exercise
 The circuit for phase control is connected to an a.c. supply V=50 sin θº, RL=50Ω the
gate current IG=100µA and VG=0.5V. Determine the range of adjustment of R for the
SCR to be triggered between 30º between 90º; take VD=0.7V.
V  VD  VG  I G RL
R
IG

R

50 sin 30  0.7  0.5  100  10 6  50 
100  10 6
R  237950  238k

R

50 sin 90  0.7  0.5  100  10 6  50 
100  10 6
R  487950  488k

Compiled by Omae Oteri-JKUAT 102

Major considerations when ordering for SCR
 The peak forward and reverse breakdown voltages.
 Maximum forward current.
 Gate trigger voltage and current.
 Minimum holding current IH.
 Power dissipation.
 Maximum change of voltage time dv/dt (switching).

TRIAC (TRIODE A. C.)

Construction
A2 A2

N4 P1 A2 P1N1P2N2
N1 G P2N1P1N4
N3 P2 N2

A1 G A1
G A1
(a) (b) Circuit symbol (c) Equivalent circuit

 It’s a 5 layer bi-directional device which can be triggered into conduction by both +ve
and -ve voltages at its anode and with both the +ve and -ve triggering pulses at the
gates.
 It behaves like 2 SCR’s connected in parallel upside down with respect to each other.

Operation
a) When A2 is +ve:
 The current flows from P1NIP2N2.
 The 2 junctions P1NI and P2N2 are forward biased whereas N1P2 junction is reverse
biased.
 The gate can be either +vely or -vely biased to turn on the triac as follows:
o +ve gate with respect to A1 forward biases the P2N2 junction and breakdown
occurs as in normal SCR.
o -ve gate forward biases P2N3 junction and current carriers injected into P2 turn on
the triac.

b) When A1 is +ve:
 Current flows from P2N1P1N4
 2 junctions P2N1 and P1N4 are forward biased whereas NIPI is reverse biased
 As earlier, conduction can be achieved by applying a +ve or -ve voltage to the gate as
follows:
o A +ve gate with respect to A1 injects current carriers by forward biasing P2N2
junction and therefore initiates conduction.
o A -ve gate injects current carriers by forward biasing P2N3 junction thereby
triggering conduction.

VI Characteristics
 It shows that a triac has same forward blocking and forward conducting
characteristics as an SCR but for either polarity of voltage applied to the main
terminal.

Compiled by Omae Oteri-JKUAT 103

 IF Output signal
IH is min I for SCR to conduct

On state

Gate voltage
Leakage current Leakage current
IH
VR VBO 0 VBO VF

Off state
Early gate triggering

IR

Applications
 It can be used to control a.c. power to a load by switching on and off during the +ve
and -ve half cycles.

G A2 i/p
D1 Triac 0
AC V A1
Conduction
R o/p
D2 Load 0
time
Load waveform

o During the +ve ½ cycle the input, diode D1 is forward biased, D2 is reverse biased
and the gate is +ve with respect to A1.
o By adjusting R, the point at which conduction starts can be varied i.e from 0 to
90º.
 It can be used as a static switch to turn a.c power on and off.
 Minimizing radio interferences.
 Light control.
 Motor speed control.
N/B: The only disadvantage of a triac is that it takes longer time to recover from off
state hence its use is limited to a.c supply frequencies of up to 400Hz.

Major considerations when ordering triacs.

 Break over voltage.
 Switching speed.
 Voltage symmetry.
 Maximum change of voltage with time.
 Break back voltage.
 Maximum current.
 Break over current / holding current (min).
 Power dissipation.

Compiled by Omae Oteri-JKUAT 104

DIAC (DIODE AC)
Construction
A2

N1 P1 A2
N2
P2 N3

A1
A1
(a) (b) Circuit symbol

 It can breakdown in either direction.

 It has only 2 terminals and is like a triac without its gate.
 When anode A1 is +ve the current path is P2N2P1N1.
 Similarly when A2 is +ve the current path is P1N2P2N3.
 A diac is designed to trigger triacs or provide protection against over voltage.
 Its operation can be visualized as 2 diodes connected on series.
 Voltage applied across it in either direction turns on one diode and reverse biases the
other, hence it can be switched from off to on state for either polarity of the applied
voltage.
 The symmetrical by directional switching characteristics are given below:-
IF Output signal
IH is min I for SCR to conduct

On state

Gate voltage
Leakage current Leakage current
Off state I
H

VR VBO 0 VBO VF

On state
Off state

IR
Considerations
 Break over voltage (typically from 20-40V).
 Voltage symmetry.
 Break back voltages.
 Break over current (typically from 50-200µA).
 Power dissipation.

Compiled by Omae Oteri-JKUAT 105

SILICON CONTROLLED SWITCH
Anode (A)
A

P
J1Anode gate A G1
N
Cathode gate J2 G1 Q1
P G2 G1
G2 J3 OFF PULSE
N
G2
Q2 ON PULSE
Cathode (C) C ON PULSE
Circuit symbol

OFF PULSE
C
 It is a 4 layer 4 terminal PNPN device having anode A cathode C, anode gate G1 and
Cathode gate G2 as shown in figure above.
 It is a low current SCR with 2 gate terminals.
 The 2 transistor equivalent circuit is shown above.
 The device may be switched on or off by a suitable pulse applied at the gate.
 As shown a -ve pulse is required at the anode gate G1 to turn the device on whereas a
+ve pulse is required to turn it off.
 Similarly at cathode gate G2 a -ve pulse is required to switch it off and a +ve pulse to
turn it on.
 When a +ve pulse is applied to G1 it forward biases Q1 which is turned on.
 The resulting heavy collector current IC being the base current of Q2 turns it on hence
the SCS is switched on.
 A +ve pulse at G1 will reverse bias EB junction Q1 thereby switching the SCS off.

V/I Characteristics
 They are essentially the same as those of SCR.
 As compared to SCR, an SCS has much reduced turn off time.
 Moreover it has higher controlled and triggering sensitivity and a more predictable
firing situation.

Applications
 It can be used in counter registers and timing circuits of computers.
 Pulse generators to generate pulses.
 Voltage sensors.
 Oscillators.

Compiled by Omae Oteri-JKUAT 106

OPERATIONAL AMPLIFIERS (OP-AMP)
 An OP-AMP is a very high-gain, high input resistance directly-coupled negative-
feedback amplifier which can amplify signals having frequency ranging from 0Hz to
1MHz.
 It’s named so because it was originally designed to perform mathematical operations
such as summation, subtraction, multiplication, differentiation and integration.

Op-Amp symbol
 The standard symbol is as shown in the figure below;
 The Op-amp’s input can be single-ended or double-ended (or differential input)
depending on whether input voltage is applied to one input terminal only or to both.
 Similarly, output can also be either single-ended or double-ended. But the most
common configuration is two input terminals and a single output.
 All Op-amps have minimum of 5 terminals;
o Inverting input terminal
o Non-inverting input terminal
o Output terminal
o Positive bias supply terminal
o Negative bias supply terminal
+ve terminal of power
power supply

Inverting input
Output
Non-Inverting input

Ground

Polarity convention
 In the figure above, input terminals are marked (-) and (+) which indicates the
inverting and non-inverting terminals only i.e. a single applied to the -ve input
terminal will be amplified but phase-inverted at the output terminal.

Ideal OP-AMP
 When Op-amp is operated without feedback it is said to be in the open-loop condition
(i.e. the word open-loop means that feedback path or loop is open)

Inverting input
Output
Non-Inverting input

Properties (characteristics)
 Infinite voltage gain (Av=∞)
 Infinite input resistance (Rin=∞), means input current is zero.
 Zero output resistance (Ro=0), means Vo is not dependent on the load resistance.
 Infinite bandwidth (can amplify signals of frequency ranging from zero to infinite).

Properties of a practical Op-amp

 High voltage gain (Av=106)
 High input resistance (Rin=106), means input current is zero.

Compiled by Omae Oteri-JKUAT 107

  Low output resistance (Ro=10-6), means Vo is not dependent on the load resistance.
 High bandwidth (can amplify signals of frequency ranging from zero to infinite).

Virtual ground and summing point

Rf Feedback resistance
i2
R1
Vin
i1 0 Vo

Virtual ground

 The above circuit is an Op-amp which employs -ve feedback using resistor Rf to feed
back a portion of the output to the input.
 Since input and feedback currents are algebraically added at point A, it’s called the
summing point.
 Since the input voltage V1 at the inverting terminal of an Op-amp is forced to very
small value that, for all practical purposes is assumed to be zero, point A is essentially
at ground voltage and thus called a virtual ground.
NB: this is not the actual ground as shown above.
 V1 is reduced to almost zero since when Vin is applied point A attains some +ve
potential and at the same time Vo is brought into existence. Due to the -ve feedback,
some fraction of the output voltage is fed back to point A out of phase with the
voltage already existing there due to Vin. The algebraic sum of the two is almost zero
such that V1=0.
 Also a virtual short exists between the two terminals of an Op-amp because V1=0.
(It’s virtual because no current flows (i.e. i=0) despite the existence of a short).

Applications of an Op-amp
 As a scalar or linear constant-gain amplifier, i.e. both inverting and non-inverting.
 As a unity follower (buffer).
 Adder or summer.
 Subtractor.
 Integrator.
 Differentiator.
 Comparator.

Inverting amplifier (negative scalar)

Rf
i2
R1
Vin
i1 Vo

Virtual ground

Applying KCL i1  i2

Compiled by Omae Oteri-JKUAT 108

 Vin  0 Vin
i1  
R1 R1
0  Vo V
i2   o
Rf Rf
Vin V
 o
R1 Rf
Vo Rf
Voltage gain  Av  
Vin R1
 Thus the closed-loop gain depends on the ratio of the two external resistors R1 and Rf
and is independent of the amplifier parameters.

Non-Inverting amplifier (positive scalar)

Rf
i2
R1
i1 Vo
Vin

 The input voltage Vin is applied to the non-inverting terminal. The polarity of Vo is
the same as that of Vin.
 Because of virtual short between the two Op-amp terminals, the voltage across R1 is
the input voltage Vin. Also Vo is applied across the series combination of R1 and Rf.
i1  i2
0  Vin V
i1    in
R1 R1
V  Vo
i2  in
Rf
Vin Vin  Vo
 
R1 Rf
Vin Vin Vo
  
R1 R f R f
Vo Vin Vin
 
Rf R1 R f
Vo R f R f Rf
Voltage gain     1
Vin R1 R f R1

Compiled by Omae Oteri-JKUAT 109

Unity follower

Vo
Vin

 Provides a gain of unity without any phase reversal.

 It’s useful as a buffer or isolation amplifier because it allows input voltage Vin to be
transferred as output voltage while at the same time preventing load resistance from
loading down the input source. It’s due to the fact that its Ro=0 and Rin=∞.
 From the gain of non-inverting Op-amp, we have;
V Rf
Voltage gain  o  1 
Vin R1
But since in this case R1=Rf=0,
Voltage gain  1  0  1

Adder or summer

if Rf
i1 R1
V1
i2 R2
V2
A Vo
i3 R3
V3

 Provides an output proportional to or equal to the algebraic sum of two or more input
voltages each multiplied by a constant gain factor.
 Since point A is a virtual ground, then
V  0 V1
i1  1 
R1 R1

V2  0 V 2
i2  
R2 R2
V  0 V3
i3  3 
R3 R3
0  Vo V
if   o
Rf Rf
Applying KCL to the virtual point, we get
i f  i1  i2  i3
V1 V2 V3 V
Equating them results to    o
R1 R2 R3 Rf
Vo V V V 
  1  2  3 
Rf  R1 R2 R3 

Compiled by Omae Oteri-JKUAT 110

 V V V 
Vo   R f  1  2  3 
 R1 R2 R3 
Taking R1=R2=R3=R gives
Rf
Vo   V1  V2  V3 
R
If Rf=R then
Vo  V1  V2  V3 

Subtractor
Rf
i2
R1
V1
i1 Vo
V2

 Its function is to provide an output proportional to or equal to the difference of two

input signals.
 Applying KCL to the virtual point, we get
i1  i2
V  V2
i1  1
R1
V  Vo
i2  2
Rf
V1  V2 V2  Vo
Equating the two results to 
R1 Rf
V1 V2 V2 Vo
  
R1 R1 R f R f
Vo V2 V2 V1
  
Rf R1 R f R1
Vo  1 1  V1
 V2   
Rf R R  R
 1 f  1

 Rf Rf 
Vo  V2     R f V1
R 
 1 Rf  R1
 Rf  V
Vo  V2   1  R f 1
 R1  R1
Omitting 1 results to
Rf
Vo  V2  V1 
R1
Taking Rf=R1 gives
Vo  V2  V1

Compiled by Omae Oteri-JKUAT 111