BSS8402DW

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features Mechanical Data
• Low On-Resistance • Case: SOT-363
• Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound.
• Low Input Capacitance UL Flammability Classification Rating 94V-0
• Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020D
• Low Input/Output Leakage • Terminals: Solderable per MIL-STD-202, Method 208
NEW PRODUCT

• Complementary Pair • Lead Free Plating (Matte Tin Finish annealed over Alloy 42
• Lead Free/RoHS Compliant (Note 2) leadframe).
• "Green" Device (Note 3 and 4) • Terminal Connections: See Diagram
• Qualified to AEC-Q101 Standards for High Reliability • Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.008 grams (approximate)
SOT-363 D1 G2 S2

Q1 Q2

S1 G1 D2
TOP VIEW
TOP VIEW
Internal Schematic

Maximum Ratings – Total Device @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Power Dissipation (Note 1) PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Maximum Ratings N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V
Gate-Source Voltage Continuous ±20
VGSS V
Pulsed ±40
Drain Current (Note 1) Continuous 115
Continuous @ 100°C ID 73 mA
Pulsed 800

Maximum Ratings P-CHANNEL – Q2, BSS84 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS ≤ 20KΩ VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID -130 mA
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

BSS8402DW 1 of 5 June 2008

Document number: DS30380 Rev. 12 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C 1.0
IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V
@ TC = 125°C 500
NEW PRODUCT

Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.5 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ Tj = 25°C 3.2 7.5 VGS = 5.0V, ID = 0.05A
RDS (ON) ⎯ Ω
@ Tj = 125°C 4.4 13.5 VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 50 pF
Output Capacitance Coss ⎯ 11 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns VDD = 30V, ID = 0.2A,
Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Electrical Characteristics P-CHANNEL – Q2, BSS84 Section @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA
⎯ ⎯ -15 µA VDS = -50V, VGS = 0V, TJ = 25°C
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -60 µA VDS = -50V, VGS = 0V, TJ = 125°C
⎯ ⎯ -100 nA VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 10 Ω VGS = -5V, ID = -0.100A
Forward Transconductance gFS .05 ⎯ ⎯ S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 45 pF
Output Capacitance Coss ⎯ ⎯ 25 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns VDD = -30V, ID = -0.27A,
Turn-Off Delay Time tD(OFF) ⎯ 18 ⎯ ns RGEN = 50Ω, VGS = -10V
Notes: 5. Short duration pulse test used to minimize self-heating effect.

BSS8402DW 2 of 5 June 2008

Document number: DS30380 Rev. 12 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

N-CHANNEL – 2N7002 SECTION

1.0 7
Tj = 25°C

6
ID, DRAIN-SOURCE CURRENT (A)

RDS(ON), STATIC DRAIN-SOURCE

0.8
5

ON-RESISTANCE (Ω)
NEW PRODUCT

0.6
4

0.4 3

2
0.2
1

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Fig. 1 On-Region Characteristics Fig. 2 On-Resistance vs. Drain Current

3.0 6
RDS(ON), STATIC DRAIN-SOURCE

RDS(ON), STATIC DRAIN-SOURCE 5

2.5
ON-RESISTANCE (Ω)

ON-RESISTANCE (Ω)

2.0 3

2
1.5

VGS = 10V, 1
ID = 200mA

1.0 0
-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18
Tj, JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs. Junction Temperature Fig. 4 On-Resistance vs. Gate-Source Voltage

10 250
VDS = 10V
9
VGS, GATE-SOURCE CURRENT (V)

Pd, POWER DISSIPATION (mW)

8 200

6 150

4 100

2 50

0 0
0 0.2 0.4 0.6 0.8 1 0 25 50 75 100 125 150 175 200
ID, DRAIN CURRENT (A) TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Typical Transfer Characteristics Fig. 6 Max Power Dissipation vs. Ambient Temperature

BSS8402DW 3 of 5 June 2008

Document number: DS30380 Rev. 12 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

P-CHANNEL – BSS84 SECTION

-600 -1.0
T A = 25°C
ID, DRAIN-SOURCE CURRENT (mA)

-500
-0.8

ID, DRAIN CURRENT (A)

NEW PRODUCT

-400
-0.6

-300

-0.4
-200

-0.2
-100

0 -0.0
0 -1 -2 -3 -4 -5 0 -1 -2 -3 -4 -5 -6 -7 -8
VDS, DRAIN-SOURCE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source Current vs. Drain-Source Voltage Fig. 8 Drain Current vs. Gate-Source Voltage

10 15
VGS = -10V
9 ID = -0.13A
RDS(ON), STATIC DRAIN-SOURCE

8 12
RDS, ON-RESISTANCE (Ω)
ON-RESISTANCE (Ω)

6 9

4 6

2 3
TA = 125° C
1
TA = 25° C
0 0
0 -1 -2 -3 -4 -5 -50 -25 0 25 50 75 100 125 150
VGS, GATE TO SOURCE (V) TJ, JUNCTION TEMPERATURE (°C)
Fig. 9 On-Resistance vs. Gate-Source Voltage Fig. 10 On-Resistance vs. Junction Temperature

25.0

20.0
RDS, ON-RESISTANCE (Ω)

VGS = -3.5V
VGS = -3V

15.0
VGS = -5V

VGS = -4V
10.0 VGS = -6V

5.0
VGS = -8V

VGS = -10V

0.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
ID, DRAIN CURRENT (A)
Fig. 11 On-Resistance vs. Drain Current

BSS8402DW 4 of 5 June 2008

Document number: DS30380 Rev. 12 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

Ordering Information (Note 6)

Part Number Case Packaging

BSS8402DW-7-F SOT-363 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information
NEW PRODUCT

KNP = Product Type Marking Code

YM
KNP YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)

Date Code Key

Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

Package Outline Dimensions

A
SOT-363
Dim Min Max
B C A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.40 0.45
H
H 1.80 2.20
K
J 0 0.10
M
K 0.90 1.00
L 0.25 0.40
J M 0.10 0.22
D F L
α 0° 8°
All Dimensions in mm

Suggested Pad Layout

E E
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
G C
Z C 1.9
E 0.65

IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

BSS8402DW 5 of 5 June 2008

Document number: DS30380 Rev. 12 - 2 www.diodes.com © Diodes Incorporated