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Lect13 PDF

This document discusses the high-frequency model of MOSFET transistors and how capacitive effects limit their operating speed. It explains that the gate-source capacitance CGS and gate-drain capacitance CGD form an RC circuit that attenuates the transistor's response at high frequencies. The unity gain frequency fT, where the short-circuit current gain drops to 1, depends on these capacitances and the transconductance gm. Making the capacitances smaller allows higher fT and faster operation. NMOS transistors currently have higher fT approaching 100 GHz compared to PMOS. The document provides an example circuit and homework on determining its transfer function and 3dB frequency point.

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SHAIK MUSTHAFA
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93 views9 pages

Lect13 PDF

This document discusses the high-frequency model of MOSFET transistors and how capacitive effects limit their operating speed. It explains that the gate-source capacitance CGS and gate-drain capacitance CGD form an RC circuit that attenuates the transistor's response at high frequencies. The unity gain frequency fT, where the short-circuit current gain drops to 1, depends on these capacitances and the transconductance gm. Making the capacitances smaller allows higher fT and faster operation. NMOS transistors currently have higher fT approaching 100 GHz compared to PMOS. The document provides an example circuit and homework on determining its transfer function and 3dB frequency point.

Uploaded by

SHAIK MUSTHAFA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Lect. 13: High-Frequency Model of MOSFET (4.

8)

What happens step voltages are applied to G with S, B grounded?

VGS

VG

VGD

It takes time to charge up voltages!


Î capacitive effects between
G and S (CGS), G and D (CGD), and many other places

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET

CGD

Lov,1 Lov,2
CGS
Lov=Lov,1+Lov,2

In saturation,

CGS= 2/3 WLCox + WLovCov (about 20fF for L=1.0µm)


CGD=WLovCov (about 2fF for L=1.0µm)

CGS > CGD

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET
How does a capacitor affect frequency response of a circuit?
vi (t ) − vo (t ) dv (t )
= i (t ) = C o
R dt
Consider an RC circuit dvo (t ) vo (t ) vi (t )
+ =
dt RC RC

If vi (t ) = Vi exp( jωt ), vo (t ) = Vo exp( jωt ) (why?)


Vo = ?

Vo exp( jωt ) Vi exp( jωt )


jω ⋅ Vo exp( jωt ) + =
RC RC
1 1
What is VO(t)/Vi(t)? Vo ( jω + ) = Vi
RC RC
1 1
jωC
Vo = Vi RC = Vi
1 1
jω + R+
RC jωC
1
Voltage divider with capacitor impedance of !
jωC

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET

For any circuit having capacitors and inductors,


1 1
use Z= (or ) for capacitor impedance and Z=jω L (or sL) for inductor impedance.
jωC sC
Vo (ω ) V ( s)
(or o ) = ?; Frequency response, System function, Transfer function
Vi (ω ) Vi ( s )

1
Vo (ω ) jωC 1 1 1
= = = (ω0 = )
Vi (ω ) R + 1 1 + jω RC 1 + j ω RC
jωC ω0
Vo (ω ) 1 Vo (ω ) ω
= ,∠ = − tan −1
Vi (ω ) 1+ ω
2 Vi (ω ) ω0
ω0 2

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET
Bode Plots
1
Vo (ω ) jωC 1 1 1
= = = (ω0 = )
Vi (ω ) R + 1 1 + jω RC 1 + j ω RC
jωC ω0
Vo (ω ) 1 Vo (ω ) ω
= ,∠ = − tan −1
Vi (ω ) 1+ ω
2 Vi (ω ) ω0
ω0 2

f3-dB=ω0/2π

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET

How fast can a MOSFET transistor operate?

CGD

CGS

Unit-Gain Frequency (ft):


Frequency at which magnitude of the short-circuit current gain of CS configuration becomes 1

Or Mag(Io(ω)/Ii(ω)) = 1

Why Vgs, not vgs? Frequency-domain analysis

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET

How fast can a MOSFET transistor operate?

Vgs
I 0 = g mVgs − = g mVgs − jωCgdVgs g mVgs ( ∵ g m >> ωC gd )
1
jωCgd
⎛ 1 1 ⎞ 1
Vgs = I i ⋅ ⎜ || ⎟⎟ = I i ⋅
⎜ jωC gd jωCgS jω (C gd + C gs )
⎝ ⎠
I gm
∴ 0 =
Ii jω (C gd + Cgs )
I0 gm
For = 1, ω =
Ii C gd + Cgs
gm
Or fT = (Unit-gain Frequency)
2π (C gd + Cgs )
How to make MOSFET faster?
Which is faster NMOS or PMOS?
Current state-of-the-art NMOS has fT approaching 100 GHz.

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET

How fast can a MOSFET transistor operate?

Vgs
I 0 = g mVgs − = g mVgs − jωC gdVgs g mVgs ( ∵ g m >> ωC gd )
1
sC gd
⎛ 1 1 ⎞ 1
Vgs = I i ⋅ ⎜ || ⎟⎟ = I i ⋅
⎜ jωC gd jωC gS jω (C gd + Cgs )
⎝ ⎠
I gm
∴ 0 =
Ii jω (Cgd + C gs )
I0 gm
For = 1, ω =
Ii Cgd + C gs
gm
Or fT = (Unit-gain Frequency)
2π (Cgd + C gs )
How to make MOSFET faster?
Which is faster NMOS or PMOS?
Current state-of-the-art NMOS has fT approaching 100 GHz.

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory


Lect. 13: High-Frequency Model of MOSFET

Homework: (Due before Tutorial on 10/17)


For the circuit given below,
1. Determine the transfer function Vi(ω)/Vs(ω).
2. Plot magnitude and phase of Vi(w)/Vs(w) in dB scale (Bode plot).
3. What is the 3-dB frequency?

20KΩ

5pF
80KΩ

Electronic Circuits 1 High-Speed Circuits and Systems Laboratory

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