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Tic 116 M

The document provides specifications for a family of silicon thyristors (TIC116A-N,S). It includes: 1) Absolute maximum ratings for off-state voltage, on-state current, and other parameters. 2) Thermal characteristics like junction-to-case thermal resistance. 3) Electrical characteristics at 25C including gate trigger current, holding current, and on-state voltage. 4) Notes on test conditions and measurements. 5) Mechanical data for the TO-220 package and pin configuration.

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75 views

Tic 116 M

The document provides specifications for a family of silicon thyristors (TIC116A-N,S). It includes: 1) Absolute maximum ratings for off-state voltage, on-state current, and other parameters. 2) Thermal characteristics like junction-to-case thermal resistance. 3) Electrical characteristics at 25C including gate trigger current, holding current, and on-state voltage. 4) Notes on test conditions and measurements. 5) Mechanical data for the TO-220 package and pin configuration.

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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTORS

TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,


TIC116N, TIC116S

P-N-P-N SILICON REVERSE-BLOCKING TRIODE


THYRISTORS

• 8 A Continuous On-State Current


• 80 A Surge-Current
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 20 mA
• Compliance to ROHS

ABSOLUTE MAXIMUM RATINGS

Value
Symbol Ratings Unit
A B C D E M S N
Repetitive peak off-state voltage
VDRM 100 200 300 400 500 600 700 800 V
(see Note1)
VRRM Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 V
Continuous on-state current at
IT(RMS) (or below) 70°C case temperature 8 A
(see note2)
Average on-state current
IT(AV) (180° conduction angle) at(or below) 5 A
70°C case temperature (see Note3)
ITM Surge on-state current (see Note4) 80 A
Peak positive gate current
IGM 3 A
(pulse width ≤300 µs)
Peak power dissipation
PGM 5 W
(pulse width ≤300 µs)
Average gate power dissipation
PG(AV) 1 W
(see Note5)
TC Operating case temperature range -40 to +110 °C
Tstg Storage temperature range -40 to +125 °C
Lead temperature 1.6 mm from case
TL 230 °C
for 10 seconds

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SEMICONDUCTORS

TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,


TIC116N, TIC116S

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit


Gate-controlled VAA = 30 V, RL = 6 ,
tgt 0.8
Turn-on time RGK(eff) = 100 , Vin = 20 V
µs
Circuit-communicated
tq VAA = 30 V, RL = 6 , IRM ≈ 10 A 11
Turn-off time
R∂JC Junction to case thermal resistance ≤3
°C/W
R∂JA Junction to free air thermal resistance ≤ 62.5

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted

Symbol Ratings Test Condition(s) Min Typ Max Unit

Repetitive peak off-state VD = Rated VDRM, RGK = 1 kΩ


IDRM - - 2 mA
current TC = 110°C
Repetitive peak reverse VR = Rated VRRM, IG = 0
IRRM - - 2 mA
current TC = 110°C
VAA = 6 V, RL = 100 Ω
IGT Gate trigger current - 5 20 mA
tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs - - 2.5
TC = -40°C
VAA = 6 V, RL = 100 Ω
VGT Gate trigger voltage - 0.8 1.5 V
RGK = 1 kΩ, tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs 0.2 - -
TC = 110°C
VAA = 6 V, RGK = 1 kΩ
- - 40
initiating IT = 100 mA
Holding current
IH VAA = 6 V, RGK = 1 kΩ mA
initiating IT = 100 mA - - 70
TC = -40°C
VTM Peak on-state voltage ITM = 8A (see Note6) - - 1.7 V
Critical rate of rise of off- VD = Rated VD
dv/dt - 100 - V/µs
state voltage TC = 110°C

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SEMICONDUCTORS

TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,


TIC116N, TIC116S

Notes:
1. These values apply when the gate-cathode resistance RGK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave
operation with resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts, are located within
3.2mm (1/8 inch) from de device body
.

MECHANICAL DATA CASE TO-220

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SEMICONDUCTORS

TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,


TIC116N, TIC116S

PINNING

Pin 1 : kathode
Pin 2 : Anode
Pin 3 : Gate

Revised September 2012


           
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
 
www.comsetsemi.com [email protected]
29/10/2012 COMSET SEMICONDUCTORS 4|4

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