AO3416

20V N-Channel MOSFET

General Description Product Summary

The AO3416 uses advanced trench technology to provide VDS 20V

excellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5A
voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V) < 22mΩ
a load switch or in PWM applications. It is ESD
RDS(ON) (at VGS = 2.5V) < 26mΩ
protected.
RDS(ON) (at VGS = 1.8V) < 34mΩ

ESD protected

SOT23
Top View Bottom View D

D
D

G
G
S
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C 6.5
ID
Current TA=70°C 5.2 A
C
Pulsed Drain Current IDM 30
TA=25°C 1.4
PD W
Power Dissipation B TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 100 125 °C/W
Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W

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 AO3416

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±8V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 0.7 1.1 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 30 A
VGS=4.5V, ID=6.5A 16 22
mΩ
TJ=125°C 22 30
RDS(ON) Static Drain-Source On-Resistance
VGS=2.5V, ID=5.5A 18 26 mΩ
VGS=1.8V, ID=5A 21 34 mΩ
gFS Forward Transconductance VDS=5V, ID=6.5A 50 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.62 1 V
IS Maximum Body-Diode Continuous Current 2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1295 1650 pF
Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 160 pF
Crss Reverse Transfer Capacitance 87 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.8 KΩ
SWITCHING PARAMETERS
Qg Total Gate Charge 10 nC
Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=6.5A 4.2 nC
Qgd Gate Drain Charge 2.6 nC
tD(on) Turn-On DelayTime 280 ns
tr Turn-On Rise Time VGS=4.5V, VDS=10V, RL=1.54Ω, 328 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 3.76 us
tf Turn-Off Fall Time 2.24 us
trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=100A/µs 31 41 ns
Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs 6.8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO3416

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25
VDS=5V
25 2.5V
1.8V 20
3.1V
20 4.5V
15
ID (A)

ID(A)
15

VGS=1.5V 10 125°C
10

5 25°C
5

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.6
VGS=2.5V
Normalized On-Resistance ID=5.5A
25 1.4
VGS=1.8V
Ω)

VGS=1.8V
RDS(ON) (mΩ

ID=5A 17
20 1.2
5
VGS=2.5V
2
VGS=4.5V10
15 1
VGS=4.5V ID=6.5A

10 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

60 1.0E+01
ID=6.5A
1.0E+00
50
40
1.0E-01
Ω)

40
RDS(ON) (mΩ

IS (A)

1.0E-02 125°C
125°C
30
1.0E-03 25°C

20 1.0E-04
25°C

10 1.0E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO3416

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1800
VDS=10V
ID=6.5A 1600
4 1400 Ciss

Capacitance (pF)
1200
VGS (Volts)

3
1000

800
2
600

1 400 Coss
200
Crss
0 0
0 2 4 6 8 10 12 0 5 10 15 20
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TJ(Max)=150°C
10µs TA=25°C
10.0 1000
RDS(ON)
100µs
Power (W)

limited
ID (Amps)

1ms 100
1.0
10ms
100ms 10
0.1 TJ(Max)=150°C
10s
TA=25°C DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=125°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO3416

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s

RL
V ds
Vds

90 %
DUT
+ Vdd
Vgs VDC

Rg - 1 0%

Vgs V gs t d (o n ) tr t d (o ff) tf

to n t o ff

D iode R ecovery T est C ircuit & W aveform s

V ds + Q rr = - Idt
DUT
V gs

t rr
V ds - L Isd IF
Isd dI/dt
+ V dd
I RM
V gs VD C
V dd
Ig
- V ds

Rev 5: July 2010 www.aosmd.com Page 5 of 5