sem

ELSEVIER Sensors and Actuators B 24-25 (1995) 252-256

TCHEMICAL

Theoretical and experimental determination of cell constants of

planar-interdigitated electrolyte conductivity sensors
W. Olthuis, W. Streekstra, P. Bergveld
MESA Research It&h&?, Univemig of Twente, PO Box 217, 7500 AE Emchede, Netherlands

Abstract

In this paper, an analytical expression is presented for the cell constant of planar-interdigitated electrodes used as electrolyte
conductivity sensors. The result of this expression is compared with results of measurement carried out with several differently
shaped planar probes provided with a thin Ta,O, insulating film, showing good agreement. More than 10 different devices
have been fabricated with predicted cell constants ranging from 0.14 to 4.44 cm-‘. The measured cell constants are typically
N-20% smaller, possibly due to fringing effects.

Keywords Cell constants; Conductivity sensors; Planar-interdigitated electrodes

1. Introduction In Fig. l(a) the structure and relevant parameters

for an interdigitated electrode pair are shown. A cross
section of our particular device is shown in Fig. l(b),
Recently, an increasing interest has been shown in including the electric-field lines. The thicknesses and
electrolyte conductivity sensors. This renewed interest the dielectric properties of the successive oxides permit
can be explained by the technological possibility of a semi-infinite approach: when used in aqueous elec-
manufacturing miniature planar-interdigitated elec-
trodes, which, for example, can form the transducing ” P

part of a chemical sensor.

The ongoing miniaturization of the electrodes led to
increasing theoretical and technological attention on
the electrode-solution interfacial impedance, whereas
less attention was paid to the resistive part stemming
from the electrolyte itself, this being the actual mea-
surand. In this paper, we focus on the resistive con-
tribution of the electrolyte to the sensor impedance
and especially on the cell constant of planar-interdi-
gitated electrodes. The cell constant describes the pro- (a)
portionality between the measured resistance and the
specific resistance of the electrolyte. We shall develop
and present an expression for the cell constant for
planar-interdigitated electrodes, including parameters TM4 <_
such as the number of electrode fingers, their width sto>--
and the space between adjacent fingers.
The description of the resistive part, neglecting the SI
electrode impedances, is justified by the recently pre-
@)
sented conductance cell, the electrodes of which are
Fig. 1. (a) Impression of an interdigitated electrode pair showing
provided with a thin Ta,O, insulating film [1,2]. The
the electrode width w, their length L and the interelectrode space
specific nature of the Ta,O,-solution interface provides s. (b) Cross section of the device: an Si substrate with 1.3 pm SO,
the electrode with a stable and relatively low ox- on top of which the 75 nm thick Pt electrodes are evaporated. The
ide-solution impedance. total device is covered with an 12.0 nm thick insulating Ta205 film.

092%4C05/95/$09.50 Q 1995 Elsevier Science %A. All rights reserved

SSDI 0925.4005(94)01352-l
 W. Oithuiset al. I Sen.wrsandAcfuulorsB 24-25 (1995) 252-256 253

trolytes, the electric-field lines between the electrodes By combining Eqs. (1) and (3) with R=R,,, the
are assumed to travel mainly through the electrolyte. parameter of interest, the cell constant K, can be
expressed in terms of the capacitance:

K=R/P=Ru= q&c (4)

2. Theoretical description of the cell constant
In the next subsection, the capacitance between two
2.1. The celI constant in relation to the capacitance planar-interdigitated electrodes, with one and with many
between two conductors fingers, is calculated.

The cell constant K [cm-‘] of an electrolyte con-

2.2. The capacitance between two planar-interdigitated
ductivity sensor is defined as the proportionality factor
electrodes
between the specific resistance p [kfI cm] of the elec-
trolyte and the measured resistance R, [kfI]:
The capacitance between any two conductors can be
Rb=p~ (1) determined when the potential distribution for every
The cell constant is determined by the geometry of point in the intermediate space is known. If there is
the sensor. No description can be found in the literature no storage of charge in the medium surrounding the
regarding the resistance Rb, but several papers give a conductors, the potential must satisfy Laplace’s equation
theoretical description of the capacitance between two and can in principle be calculated accordingly. In prac-
conductors, even for complex geometries. These the- tice, however, this direct procedure is too complicated
oretical descriptions can readily be used to describe to yield an analytical expression for the planar electrode
the resistance, because if the capacitance between two configuration described here.
conductors is known, the resistance between these An easier way to find an analytical solution for the
conductors is also known under certain conditions, using potential distribution is by using the method of con-
electromagnetic field theory. formal transformation (mapping) [3]. With this method
For two conductors of arbitrary shape, separated by each particular curve or shape on the real-world (x,
a dielectric medium with a non-zero conductivity, the y) plane is converted into a corresponding curve or
following expression can be derived, using Ohm’s law shape on, e.g., a (u, V) plane. If this geometric trans-
and Maxwell’s equations, where E denotes the electric formation satisfies the condition that curves intersecting
field: at right angles of the (x, y) plane will continue to do
so on the (IL,w) plane, the method is called conformal
mapping. Obviously, the reason for performing such a
transformation is that an analytical expression for the
potential distribution can be found relatively easily after
where the medium, with conductivity (T[mS cm-l] (= l/
this coordinate transformation.
p) and relative dielectric constant Ed, is isotropic and
In real-world coordinates, the two-finger capacitor
with R and C the resistance and capacitance between
can be schematically represented as shown in Fig. 2(a).
the conductors, respectively. The surface integral is
After mapping, the capacitor is represented in the (u,
carried out over a surface enclosing one conductor. If
V) plane as shown in Fig. 2(b). The capacity per unit
in addition the dielectric medium is homogeneous, Eq.
length, C,, of the electrodes can easily be derived from
(2) can be simplified to
Fig. 2(b):
RC= .q,~,lu (3)
Therefore, if the capacitance between two conductors
is known, the resistance can be obtained directly from
Eq. (3). For two parallel-plate conductors, Eq. (3) can
be simply checked, because the analytical expressions
for R and C of such a configuration are known (ignoring
any fringing effects):

C=~+4/d andR=d/aA(=pd/A)

thus

RC = e&a
(a) 1
with d and A the separation and the area of the plates, Fig. 2. (a) Representation of the two-finger structure in the (x, y)
respectively. plane and (b) after conformal mapping in the (u, v) plane.
254 W. Olthuk et al. I Senrors and Achuturs B 24-25 (1995) 252-256

After some tediousintegral calculations, thiscapacitance electrode structure as shown in Fig. l(a). Then, 50 nm
can be expressed as Ta was applied on the Pt and SiO, structure by electron-
gun evaporation with a deposition rate of 5 8, SK’.
c = EOE,K[(l-kyl This Ta film was oxidized at 500 “C for 3 h in O2
I
2 (6)
K(k) ambient, resulting in a Ta,O, layer = 120 nm thick. A
when K(k) is the complete elliptic integral of the first cross-sectional view is shown in Fig. l(b). Openings to
kind: the Pt electrode were accomplished by reactive ion
etching of the Ta,O, layer after proper masking. The
finger spacing and finger width of the prepared series
of differently shaped interdigitated electrodes were not
of a critically small size (from 10-100 Fm), so that the
Eqn. (6) becomes useful when the variable of function actual realized dimensions were within 5% of the original
Ii, the so-called modulus k, is related to real-world designs of the masks for photolithography.
shapes and dimensions. For the configuration described After dicing, the 3 mmx4 mm chips were glued on
here, for two fingers, k can be approximated by [3] a 8 mmX100 mm printed circuit board (PCB) carrier
and the Pt electrodes were connected to the copper
k= k strips on the PCB with bonding wires. The copper
(8)
strips, the bonding wires and the edges of the chip
where s and w represent the relevant dimensions of were covered with epoxy for insulation and protection.
the sensor, as depicted in Fig. 1.
For more than two fingers, the periodicity of the 3.2. Measurement set-up
structure requires another definition of the modulus k
[41: Although we focus in this paper on the resistive
contribution from the electrolyte, R,, the other elements
of the sensor that also somehow determine the signal
transfer have to be taken into account when performing
The total capacitance is the sum of the total number actual measurements. These components are indicated
of gaps between the fingers, which for a total of N in Fig. 3(a). Typical values of these components are
electrode fingers is simply N- 1, and is for a finger- given in the Figure caption. Depending on the measuring
length L given by frequency used and the range of Rb, these components
c= (N- l)LC, can either be neglected or taken into account due to
(10)
their constant nature.
For N=2, Eqs. (6), (7) and (8) should be used, and
for N>2, Eqs. (6) (7) and (9) should be used.

2.3. The expression for the cell constant

The combination of Eq. (4) and Eq. (10) yields the

expression for the cell constant:

where different definitions of the modulus k should be

used depending on the value of N, as mentioned above.

3. Experimental

3.1. Device preparation

I
A 75 nm thick Pt film was sputtered with a d.c. (b)
sputter gun on top of a Si wafer with 1.3 pm SiO,.
Fig. 3. (a) Cross-sectional view of the sensor showing parasitic
In between the SiO, and the Pt film, a film of 20 nm components; TalOs capacitance C, = 1 nF, Si02 capacitance C,= 10
Ti was applied for adhesion. The Pt was patterned pF (typical values). (b) The measurement set-up, indicating the
using ion-beam etching, resulting in the interdigitated bootstrapping.
 W. 0Nhui.v et al. I Sensors and Actiators B 24-25 (lW5) 252-256 255

For the measurements performed in this paper, we (11) and the experimentally determined cell constant
used a constant-current source and a voltage follower are summarized in Table 1.
as shown in Fig. 3(b). We took into account the output As can be concluded from Table 1, the experimentally
and input capacitance of the current source and voltage found values for the cell constant correspond reasonably
follower, respectively. The follower was not only used well with the theoretically determined values from Eqs.
to give a low-impedance output signal, but also to (10) and (11). However, the experimentally foundvalues
provide for active shielding (or bootstrapping) of the are systematically smaller than the theoretically cal-
signal path to the non-inverting input of the follower, culated cell constants. Our explanation for this sys-
thereby decreasing the effect of parasitic capacitances. tematic discrepancy is the presence of fringing effects
at the Ta,O,-solution interface, causing the electric-
3.3. Protocol field lines to diverge instead of starting perfectly per-
pendicular to this interface. This causes the apparent
In order to determine the values of the capacitances electrode width, w, derived from the observed data, to
shown in Fig. 3(a, b), the output potential was measured be slightly larger than stated in Table 1, which would
at a constant electrolyte concentration for frequencies result in a smaller calculated cell constant, according
ranging from 20 to 500 kHz. Subsequently, the mea- to Fig. 4.
surements were repeated for a different electrolyte The measured output potential, V,.,, as a function
concentration. Using the now known values for the of the specific resistivity p, using the set-up as shown
capacitances, the value of Rb can be calculated and in Fig. 3(b), is given in Fig. 5 for two very different
from the tabled values of p at the known concentration, sensor shapes (sensor nos. 2 and 10 of Table 1). The
the cell constant could be calculated with Eq. (1). All range of specific resistivity corresponds to [KC11from
measurements were carried out in KC1 at room tem- 0.5 to 100 mM. These two typical experimental curves
perature. show a linear behaviour, as expected from the constant-
current mode of operation [l]. Note that the slopes

4. Results and discussion Table 1

Experimentally found cell constant, K__,;,,,, compared to the the-
oretically calculated cell constant, K,~_~, for 11 different interdigitated
The most effective way to summarize the results of electrodes with N fingers of width w and length L, spaced s apart
the theoretically determined expression for the cell
constant is by presenting the normalized cell constant N w (4 3 (rm) 5.prinl
(cm-‘)
derived from Eq. (11) as a function of a normalized
geometric parameter, as shown in Fig. 4 using Eq. (8) 1 16 50 50 1000 1.33 1.13
for N=2 and Eq. (9) for N>2. 2 40 20 20 500 1.03 0.93
Measurements focused on the experimental deter- 3 12 100 50 1000 1.43 1.22
mination of the cell constant were performed for the 4 12 50 100 1000 1.72 1.63
5 10 80 80 500 4.44 3.11
series of differently shaped interdigitated electrodes. 6 16 50
50 1000 1.33 1.06
The geometry, the calculated cell constant from Eq. 7 30 20 20 1460 0.47 0.45
8 50 20 20 1600 0.26 0.23
9 8 30 170 1600 2.98 2.50
10 100 10 10 1500 0.14 0.14
11 8 170 30 0.87 0.78

0 40 80 120 160

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Specific resistlvity [Ohm*m]
WWS) Fig. 5. Output voltage Vo.,
of the constant-current mode of operation
Fig. 4. Normalized cell constant as a function of the normalized 0=7 P&m,, at 200 kHz) as a function of the specific resistivity for
electrode geometry; results of simulations. two sensors, nos. 2 and 10 of Table 1.
256 K 0Ithui.v et al. I Semors and Achwfors B 24-25 (1995) 252-256

of these curves do not directly represent the cell constant References

K as shown in Table 1, because the effect of the sensor

parasitic capacitances as shown in Fig. 3(a) play a role

in the resulting output voltage. [ll W. Olthuis, k Volanschi, J.G. Bomer and P. Bergveld, A new
probe for measuring electrolytic conductance, Sensors and Ac-
*atom E, 13-14 (1993) 23tL233.
[Z] W. Olthuis, A. Smith, R.A.J. van der Zalm and P. Bergveld,
5. Conclusions
New operational modes for the Ta205-based electrolyte con-
ductance cell, Senrors and Actuators B, 18-19 (1994) 65-68.
A theoretically derived expression for the cell constant [3] A. Nussbaum, Electromagnetic 7hemyforEngineers and Scientists,
of interdigitated planar electrodes is presented and the Prentice-Hall, En&wood Cliffs, 1965.
result of this expression is in accordance with the results [4] H. Engan, Exitation of elastic surface wwes by spatial harmonics
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for various shapes of interdigitated electrodes. 16 (1969) 1014-1017.