Am29F200B

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations ■ Embedded Algorithms
— Minimizes system level power requirements — Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
■ Manufactured on 0.32 µm process technology
combination of designated sectors
— Compatible with 0.5 µm Am29F200A device
— Embedded Program algorithm automatically
■ High performance writes and verifies data at specified addresses
— Access times as fast as 45 ns ■ Minimum 1,000,000 write/erase cycles guaranteed
■ Low power consumption ■ 20-year data retention at 125°C
— 20 mA typical active read current (byte mode) — Reliable operation for the life of the system
— 28 mA typical active read current for ■ Package options
(word mode) — 44-pin SO
— 30 mA typical program/erase current — 48-pin TSOP
— 1 µA typical standby current — Known Good Die (KGD)
■ Sector erase architecture (see publication number 21257)
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and ■ Compatible with JEDEC standards
three 64 Kbyte sectors (byte mode) — Pinout and software compatible with
— One 8 Kword, two 4 Kword, one 16 Kword, and single-power-supply flash
three 32 Kword sectors (word mode) — Superior inadvertent write protection
— Supports full chip erase
■ Data# Polling and Toggle Bit
— Sector Protection features:
— Detects program or erase cycle completion
A hardware method of locking a sector to
■ Ready/Busy# output (RY/BY#)
prevent any program or erase operations within
that sector — Hardware method for detection of program or
erase cycle completion
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code ■ Erase Suspend/Erase Resume
changes in previously locked sectors — Supports reading data from a sector not
being erased
■ Top or bottom boot block configurations available
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Publication# 21526 Rev: B Amendment/+2
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Issue Date: July 2, 1999
GENERAL DESCRIPTION
The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash Device erasure occurs by executing the erase
memory organized as 262,144 bytes or 131,072 words. command sequence. This initiates the Embedded
The 8 bits of data appear on DQ0–DQ7; the 16 bits on Erase algorithm—an internal algorithm that automati-
DQ0–DQ15. The Am29F200B is offered in 44-pin SO cally preprograms the array (if it is not already
and 48-pin TSOP packages. The device is also avail- programmed) before executing the erase operation.
able in Known Good Die (KGD) form. For more During erase, the device automatically times the erase
information, refer to publication number 21257. This pulse widths and verifies proper cell margin.
device is designed to be programmed in-system with
The host system can detect whether a program or
the standard system 5.0 volt VCC supply. A 12.0 volt
erase operation is complete by observing the RY/BY#
VPP is not required for program or erase operations.
pin, or by reading the DQ7 (Data# Polling) and DQ6/
The device can also be reprogrammed in standard
DQ2 (toggle) status bits. After a program or erase
EPROM programmers.
cycle has been completed, the device is ready to read
This device is manufactured using AMD’s 0.32 µm array data or accept another command.
process technology, and offers all the features and
The sector erase architecture allows memory sectors
benefits of the Am29F200A, which was manufactured
to be erased and reprogrammed without affecting the
using 0.5 µm process technology.
data contents of other sectors. The device is fully
The standard device offers access times of 45, 50, 55, erased when shipped from the factory.
70, 90, and 120 ns, allowing operation of high-speed
Hardware data protection measures include a low
microprocessors without wait states. To eliminate bus
VCC detector that automatically inhibits write opera-
contention the device has separate chip enable (CE#),
tions during power transitions. The hardware sector
write enable (WE#) and output enable (OE#) controls.
protection feature disables both program and erase
The device requires only a single 5.0 volt power operations in any combination of the sectors of memory.
supply for both read and write functions. Internally This can be achieved via programming equipment.
generated and regulated voltages are provided for the
The Erase Suspend feature enables the user to put
program and erase operations.
erase on hold for any period of time to read data from,
The device is entirely command set compatible with the or program data to, any sector that is not selected for
JEDEC single-power-supply Flash standard. Com- erasure. True background erase can thus be achieved.
mands are written to the command register using
The hardware RESET# pin terminates any operation
standard microprocessor write timings. Register con-
in progress and resets the internal state machine to
tents serve as input to an internal state-machine that
reading array data. The RESET# pin may be tied to the
controls the erase and programming circuitry. Write
system reset circuitry. A system reset would thus also
cycles also internally latch addresses and data needed
reset the device, enabling the system microprocessor
for the programming and erase operations. Reading
to read the boot-up firmware from the Flash memory.
data out of the device is similar to reading from other
Flash or EPROM devices. The system can place the device into the standby
mode. Power consumption is greatly reduced in this mode.
Device programming occurs by executing the program
command sequence. This initiates the Embedded AMD’s Flash technology combines years of Flash
Program algorithm—an internal algorithm that auto- memory manufacturing experience to produce the
matically times the program pulse widths and verifies highest levels of quality, reliability and cost effective-
proper cell margin. ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.

2 Am29F200B
PRODUCT SELECTOR GUIDE
Family Part Number Am29F200B

VCC = 5.0 V ± 5% -45 -50

Speed Option
VCC = 5.0 V ± 10% -55 -70 -90 -120

Max access time, ns (tACC) 45 50 55 70 90 120

Max CE# access time, ns (tCE) 45 50 55 70 90 120

Max OE# access time, ns (tOE) 30 30 30 30 35 50

BLOCK DIAGRAM

DQ0–DQ15

RY/BY#
RY/BY#
VCC Buffer
VSS Erase Voltage Input/Output
Generator Buffers

State
WE#
Control
BYTE#
RESET# Command
Register PGM Voltage
Generator
Chip Enable Data
STB
CE# Output Enable Latch
OE# Logic

Y-Decoder Y-Gating
STB
Address Latch

VCC Detector Timer

X-Decoder Cell Matrix

A0–A16

A-1

21526B-1

Am29F200B 3
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for
more information.

NC 1 44 RESET#
RY/BY# 2 43 WE#
NC 3 42 A8
A7 4 41 A9
A6 5 40 A10
A5 6 39 A11
A4 7 38 A12
A3 8 37 A13
A2 9 36 A14
A1 10 35 A15
A0 11 34 A16
CE# 12 SO 33 BYTE#
VSS 13 32 VSS
OE# 14 31 DQ15/A-1
DQ0 15 30 DQ7
DQ8 16 29 DQ14
DQ1 17 28 DQ6
DQ9 18 27 DQ13
DQ2 19 26 DQ5
DQ10 20 25 DQ12
DQ3 21 24 DQ4
DQ11 22 23 VCC

21526B-2

4 Am29F200B
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for
more information.

A15 1 48 A16
A14 2 47 BYTE#
A13 3 46 VSS
A12 4 45 DQ15/A-1
A11 5 44 DQ7
A10 6 43 DQ14
A9 7 42 DQ6
A8 8 41 DQ13
NC 9 40 DQ5
NC 10 39 DQ12
WE# 11 38 DQ4
RESET# 12 37 VCC
NC 13 Standard TSOP 36 DQ11
NC 14 35 DQ3
RY/BY# 15 34 DQ10
NC 16 33 DQ2
NC 17 32 DQ9
A7 18 31 DQ1
A6 19 30 DQ8
A5 20 29 DQ0
A4 21 28 OE#
A3 22 27 VSS
A2 23 26 CE#
A1 24 25 A0

21526B-3

A16 1 48 A15
BYTE# 2 47 A14
VSS 3 46 A13
DQ15/A-1 4 45 A12
DQ7 5 44 A11
DQ14 6 43 A10
DQ6 7 42 A9
DQ13 8 41 A8
DQ5 9 40 NC
DQ12 10 39 NC
DQ4 11 38 WE#
VCC 12 Reverse TSOP 37 RESET#
DQ11 13 36 NC
DQ3 14 35 NC
DQ10 15 34 RY/BY#
DQ2 16 33 NC
DQ9 17 32 NC
DQ1 18 31 A7
DQ8 19 30 A6
DQ0 20 29 A5
OE# 21 28 A4
VSS 22 27 A3
CE# 23 26 A2
A0 24 25 A1

21526B-4

Am29F200B 5
PIN CONFIGURATION LOGIC SYMBOL
A0–A16 = 17 addresses
17
DQ0–DQ14 = 15 data inputs/outputs A0–A16 16 or 8
DQ15/A-1 = DQ15 (data input/output, word mode), DQ0–DQ15
A-1 (LSB address input, byte mode) (A-1)

BYTE# = Selects 8-bit or 16-bit mode

CE#
CE# = Chip enable OE#
OE# = Output enable
WE#
WE# = Write enable RESET#
RESET# = Hardware reset pin, active low BYTE# RY/BY#
RY/BY# = Ready/Busy output
VCC = +5.0 V single power supply
(see Product Selector Guide for
device speed ratings and voltage 21526B-5
supply tolerances)
VSS = Device ground
NC = Pin not connected internally

6 Am29F200B
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of:

Am29F200B T -45 E C
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-In
(Contact an AMD representative for more information)

TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)

PACKAGE TYPE
E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
F = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048)
S = 44-Pin Small Outline Package (SO 044)
This device is also available in Known Good Die (KGD) form. See publication number
21257 for more information.

SPEED OPTION
See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top sector
B = Bottom sector

DEVICE NUMBER/DESCRIPTION
Am29F200B
2 Megabit (256 K x 8-Bit128 K x 16-Bit) CMOS Flash Memory
5.0 Volt-only Program and Erase

Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be sup-
AM29F200BT-45, ported in volume for this device. Consult the local AMD sales
EC, EI, FC, FI, SC, SI
AM29F200BB-45 office to confirm availability of specific valid combinations and
AM29F200BT-50, to check on newly released combinations.
AM29F200BB-50
AM29F200BT-55,
AM29F200BB-55
EC, EI, EE,
AM29F200BT-70,
FC, FI, FE,
AM29F200BB-70
SC, SI, SE
AM29F200BT-90,
AM29F200BB-90
AM29F200BT-120,
AM29F200BB-120

Am29F200B 7
DEVICE BUS OPERATIONS
This section describes the requirements and use of the the register serve as inputs to the internal state
device bus operations, which are initiated through the machine. The state machine outputs dictate the func-
internal command register. The command register tion of the device. The appropriate device bus
itself does not occupy any addressable memory loca- operations table lists the inputs and control levels
tion. The register is composed of latches that store the required, and the resulting output. The following sub-
commands, along with the address and data informa- sections describe each of these operations in further
tion needed to execute the command. The contents of detail.

Table 1. Am29F200B Device Bus Operations

DQ8–DQ15

BYTE# BYTE#
Operation CE# OE# WE# RESET# A0–A16 DQ0–DQ7 = VIH = VIL

Read L L H H AIN DOUT DOUT High-Z

Write L H L H AIN DIN DIN High-Z

CMOS Standby VCC ± 0.5 V X X VCC ± 0.5 V X High-Z High-Z High-Z

TTL Standby H X X H X High-Z High-Z High-Z

Output Disable L H H H X High-Z High-Z High-Z

Hardware Reset X X X L X High-Z High-Z High-Z

Temporary Sector Unprotect

X X X VID AIN DIN DIN X
(See Note)

Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Note: See the sections Sector Group Protection and Temporary Sector Unprotect for more information.

Word/Byte Configuration content occurs during the power transition. No

command is necessary in this mode to obtain array
The BYTE# pin controls whether the device data I/O
data. Standard microprocessor read cycles that assert
pins DQ15–DQ0 operate in the byte or word configura-
valid addresses on the device address inputs produce
tion. If the BYTE# pin is set at logic ‘1’, the device is in
valid data on the device data outputs. The device
word configuration, DQ15–DQ0 are active and con-
remains enabled for read access until the command
trolled by CE# and OE#.
register contents are altered.
If the BYTE# pin is set at logic ‘0’, the device is in byte
See “Reading Array Data” for more information. Refer
configuration, and only data I/O pins DQ0–DQ7 are
to the AC Read Operations table for timing specifica-
active and controlled by CE# and OE#. The data I/O
tions and to the Read Operations Timings diagram for
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
the timing waveforms. ICC1 in the DC Characteristics
used as an input for the LSB (A-1) address function.
table represents the active current specification for
reading array data.
Requirements for Reading Array Data
To read array data from the outputs, the system must Writing Commands/Command Sequences
drive the CE# and OE# pins to VIL. CE# is the power
To write a command or command sequence (which
control and selects the device. OE# is the output
includes programming data to the device and erasing
control and gates array data to the output pins. WE#
sectors of memory), the system must drive WE# and
should remain at VIH. On x16 (word-wide) devices, the
CE# to VIL, and OE# to VIH.
BYTE# pin determines whether the device outputs
array data in words or bytes. On x16 (word-wide) devices, for program operations,
the BYTE# pin determines whether the device accepts
The internal state machine is set for reading array data
program data in bytes or words. Refer to “Word/Byte
upon device power-up, or after a hardware reset. This
Configuration” for more information.
ensures that no spurious alteration of the memory

8 Am29F200B
An erase operation can erase one sector, multiple sec- If the device is deselected during erasure or program-
tors, or the entire device. The Sector Address Tables ming, the device draws active current until the
indicate the address space that each sector occupies. operation is completed.
A “sector address” consists of the address bits required
In the DC Characteristics tables, ICC3 represents the
to uniquely select a sector. See the “Command Defini-
standby current specification.
tions” section for details on erasing a sector or the
entire chip, or suspending/resuming the erase
RESET#: Hardware Reset Pin
operation.
The RESET# pin provides a hardware method of reset-
After the system writes the autoselect command ting the device to reading array data. When the system
sequence, the device enters the autoselect mode. The drives the RESET# pin low for at least a period of tRP,
system can then read autoselect codes from the the device immediately terminates any operation in
internal register (which is separate from the memory progress, tristates all data output pins, and ignores all
array) on DQ7–DQ0. Standard read cycle timings apply read/write attempts for the duration of the RESET#
in this mode. Refer to the “Autoselect Mode” and pulse. The device also resets the internal state
“Autoselect Command Sequence” sections for more machine to reading array data. The operation that was
information. interrupted should be reinitiated once the device is
ICC2 in the DC Characteristics table represents the ready to accept another command sequence, to
active current specification for the write mode. The “AC ensure data integrity.
Characteristics” section contains timing specification Current is reduced for the duration of the RESET#
tables and timing diagrams for write operations. pulse. When RESET# is held at VIL, the device enters
the TTL standby mode; if RESET# is held at VSS ±
Program and Erase Operation Status 0.5 V, the device enters the CMOS standby mode.
During an erase or program operation, the system may
The RESET# pin may be tied to the system reset cir-
check the status of the operation by reading the status
cuitry. A system reset would thus also reset the Flash
bits on DQ7–DQ0. Standard read cycle timings and ICC
memory, enabling the system to read the boot-up firm-
read specifications apply. Refer to “Write Operation
ware from the Flash memory.
Status” for more information, and to each AC Charac-
teristics section in the appropriate data sheet for timing If RESET# is asserted during a program or erase oper-
diagrams. ation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
Standby Mode time of tREADY (during Embedded Algorithms). The
When the system is not reading or writing to the device, system can thus monitor RY/BY# to determine whether
it can place the device in the standby mode. In this the reset operation is complete. If RESET# is asserted
mode, current consumption is greatly reduced, and the when a program or erase operation is not executing
outputs are placed in the high impedance state, inde- (RY/BY# pin is “1”), the reset operation is completed
pendent of the OE# input. within a time of tREADY (not during Embedded Algo-
rithms). The system can read data t RH after the
The device enters the CMOS standby mode when CE# RESET# pin returns to VIH.
and RESET# pins are both held at VCC ± 0.5 V. (Note
that this is a more restricted voltage range than VIH.) Refer to the AC Characteristics tables for RESET#
The device enters the TTL standby mode when CE# parameters and timing diagram.
and RESET# pins are both held at VIH. The device
requires standard access time (tCE) for read access Output Disable Mode
when the device is in either of these standby modes, When the OE# input is at VIH, output from the device is
before it is ready to read data. disabled. The output pins are placed in the high imped-
ance state.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
“RESET#: Hardware Reset Pin”.

Am29F200B 9
 Table 2. Am29F200T Top Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector Size
(Kbytes/ (x8) (x16)
Sector A16 A15 A14 A13 A12 Kwords) Address Range Address Range

SA0 0 0 X X X 64/32 00000h–0FFFFh 00000h–07FFFh

SA1 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh

SA2 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh

SA3 1 1 0 X X 32/16 30000h–37FFFh 18000h–1BFFFh

SA4 1 1 1 0 0 8/4 38000h–39FFFh 1C000h–1CFFFh

SA5 1 1 1 0 1 8/4 3A000h–3BFFFh 1D000h–1DFFFh

SA6 1 1 1 1 X 16/8 3C000h–3FFFFh 1E000h–1FFFFh

Table 3. Am29F200B Bottom Boot Block Sector Address Table

Address Range (in hexadecimal)
Sector Size
(Kbytes/ (x8) (x16)
Sector A16 A15 A14 A13 A12 Kwords) Address Range Address Range

SA0 0 0 0 0 X 16/8 00000h–03FFFh 00000h–01FFFh

SA1 0 0 0 1 0 8/4 04000h–05FFFh 02000h–02FFFh

SA2 0 0 0 1 1 8/4 06000h–07FFFh 03000h–03FFFh

SA3 0 0 1 X X 32/16 08000h–0FFFFh 04000h–07FFFh

SA4 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh

SA5 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh

SA6 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh

Note for Tables 2 and 3: Address range is A16:A-1 in byte mode and A16:A0 in word mode. See the “Word/Byte Configuration”
sectionfor more information.

Autoselect Mode
The autoselect mode provides manufacturer and address must appear on the appropriate highest order
device identification, and sector protection verification, address bits. Refer to the corresponding Sector
through identifier codes output on DQ7–DQ0. This Address Tables. The Command Definitions table
mode is primarily intended for programming equipment shows the remaining address bits that are don’t care.
to automatically match a device to be programmed with When all necessary bits have been set as required, the
its corresponding programming algorithm. However, programming equipment may then read the corre-
the autoselect codes can also be accessed in-system sponding identifier code on DQ7–DQ0.
through the command register.
To access the autoselect codes in-system, the host
When using programming equipment, the autoselect system can issue the autoselect command via the
mode requires VID (11.5 V to 12.5 V) on address pin command register, as shown in the Command Defini-
A9. Address pins A6, A1, and A0 must be as shown in tions table. This method does not require VID. See
Autoselect Codes (High Voltage Method) table. In addi- “Autoselect Command Sequence” for details on using
tion, when verifying sector protection, the sector the autoselect mode.

10 Am29F200B
 Table 4. Am29F200B Autoselect Codes (High Voltage Method)
A16 A11 A8 A5 DQ8 DQ7
to to to to to to
Description Mode CE# OE# WE# A12 A10 A9 A7 A6 A2 A1 A0 DQ15 DQ0

Manufacturer ID: AMD L L H X X VID X L X L L X 01h

Device ID: Word L L H 22h 51h

Am29F200B X X VID X L X L H
(Top Boot Block) Byte L L H X 51h

Device ID: Word L L H 22h 57h

Am29F200B X X VID X L X L H
(Bottom Boot Block) Byte L L H X 57h

01h
X
(protected)
Sector Protection Verification L L H SA X VID X L X H L
00h
X
(unprotected)

L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.

Sector Protection/Unprotection
The hardware sector protection feature disables both START
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected RESET# = VID
sectors. (Note 1)
Sector protection/unprotection must be implemented
using programming equipment. The procedure Perform Erase or
requires a high voltage (VID) on address pin A9 and the Program Operations
control pins. Details on this method are provided in a
supplement, publication number 20551. Contact an
AMD representative to obtain a copy of the appropriate RESET# = VIH
document.
The device is shipped with all sectors unprotected.
Temporary Sector
AMD offers the option of programming and protecting Unprotect
sectors at its factory prior to shipping the device Completed (Note 2)
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected 21526B-6
or unprotected. See “Autoselect Mode” for details. Notes:
1. All protected sectors unprotected.
Temporary Sector Unprotect 2. All previously protected sectors are protected once
This feature allows temporary unprotection of previ- again.
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the Figure 1. Temporary Sector Unprotect Operation
RESET# pin to VID. During this mode, formerly pro-
tected sectors can be programmed or erased by
selecting the sector addresses. Once VID is removed Hardware Data Protection
from the RESET# pin, all the previously protected
sectors are protected again. Figure 1 shows the algo- The command sequence requirement of unlock cycles
rithm, and the Temporary Sector Unprotect diagram for programming or erasing provides data protection
(Figure 18) shows the timing waveforms, for this against inadvertent writes (refer to the Command Defi-
feature. nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-

Am29F200B 11
gramming, which might otherwise be caused by Write Pulse “Glitch” Protection
spurious system level signals during VCC power-up and Noise pulses of less than 5 ns (typical) on OE#, CE# or
power-down transitions, or from system noise. WE# do not initiate a write cycle.
Low VCC Write Inhibit Logical Inhibit
When V CC is less than V LKO, the device does not Write cycles are inhibited by holding any one of OE# =
accept any write cycles. This protects data during VCC VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
power-up and power-down. The command register and CE# and WE# must be a logical zero while OE# is a
all internal program/erase circuits are disabled, and the logical one.
device resets. Subsequent writes are ignored until VCC
is greater than V LKO. The system must provide the Power-Up Write Inhibit
proper signals to the control pins to prevent uninten- If WE# = CE# = VIL and OE# = VIH during power up, the
tional writes when VCC is greater than VLKO. device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.

COMMAND DEFINITIONS
Writing specific address and data commands or ters, and Read Operation Timings diagram shows the
sequences into the command register initiates device timing diagram.
operations. The Command Definitions table defines the
valid register command sequences. Writing incorrect Reset Command
address and data values or writing them in the Writing the reset command to the device resets the
improper sequence resets the device to reading array device to reading array data. Address bits are don’t
data. care for this command.
All addresses are latched on the falling edge of WE# or The reset command may be written between the
CE#, whichever happens later. All data is latched on sequence cycles in an erase command sequence
the rising edge of WE# or CE#, whichever happens before erasing begins. This resets the device to reading
first. Refer to the appropriate timing diagrams in the array data. Once erasure begins, however, the device
“AC Characteristics” section. ignores reset commands until the operation is
complete.
Reading Array Data
The reset command may be written between the
The device is automatically set to reading array data
sequence cycles in a program command sequence
after device power-up. No commands are required to
before programming begins. This resets the device to
retrieve data. The device is also ready to read array
reading array data (also applies to programming in
data after completing an Embedded Program or
Erase Suspend mode). Once programming begins,
Embedded Erase algorithm.
however, the device ignores reset commands until the
After the device accepts an Erase Suspend command, operation is complete.
the device enters the Erase Suspend mode. The
The reset command may be written between the
system can read array data using the standard read
sequence cycles in an autoselect command sequence.
timings, except that if it reads at an address within
Once in the autoselect mode, the reset command must
erase-suspended sectors, the device outputs status
be written to return to reading array data (also applies
data. After completing a programming operation in the
to autoselect during Erase Suspend).
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase If DQ5 goes high during a program or erase operation,
Suspend/Erase Resume Commands” for more infor- writing the reset command returns the device to
mation on this mode. reading array data (also applies dur ing Erase
Suspend).
The system must issue the reset command to re-
enable the device for reading array data if DQ5 goes
Autoselect Command Sequence
high, or while in the autoselect mode. See the “Reset
Command” section, next. The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
See also “Requirements for Reading Array Data” in the and determine whether or not a sector is protected.
“Device Bus Operations” section for more information. The Command Definitions table shows the address
The Read Operations table provides the read parame- and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage

12 Am29F200B
Method) table, which is intended for PROM program-
mers and requires VID on address bit A9.
The autoselect command sequence is initiated by START
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
Write Program
number of times, without initiating another command
Command Sequence
sequence.
A read cycle at address XX00h retrieves the manufac-
turer code. A read cycle at address XX01h in word Data Poll
mode (or 02h in byte mode) returns the device code. A from System
Embedded
read cycle containing a sector address (SA) and the
Program
address 02h in word mode (or 04h in byte mode) algorithm
returns 01h if that sector is protected, or 00h if it is in progress
unprotected. Refer to the Sector Address tables for
valid sector addresses. Verify Data?
No
The system must write the reset command to exit the
autoselect mode and return to reading array data. Yes

Word/Byte Program Command Sequence No

Increment Address Last Address?
The system may program the device by byte or word,
on depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program Yes
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up command. Programming
The program address and data are written next, which Completed
in turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or tim- 21526B-6
ings. The device automatically provides internally Note: See the appropriate Command Definitions table for
generated program pulses and verify the programmed program command sequence.
cell margin. The Command Definitions take shows the
address and data requirements for the byte program Figure 2. Program Operation
command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and Chip Erase Command Sequence
addresses are no longer latched. The system can Chip erase is a six-bus-cycle operation. The chip erase
determine the status of the program operation by using command sequence is initiated by writing two unlock
DQ7, DQ6, or RY/BY#. See “Write Operation Status” cycles, followed by a set-up command. Two additional
for information on these status bits. unlock write cycles are then followed by the chip erase
Any commands written to the device during the command, which in turn invokes the Embedded Erase
Embedded Program Algorithm are ignored. Note that a algorithm. The device does not require the system to
hardware reset immediately terminates the program- preprogram prior to erase. The Embedded Erase algo-
ming operation. The program command sequence rithm automatically preprograms and verifies the entire
should be reinitiated once the device has reset to memory for an all zero data pattern prior to electrical
reading array data, to ensure data integrity. erase. The system is not required to provide any con-
trols or timings during these operations. The Command
Programming is allowed in any sequence and across Definitions table shows the address and data require-
sector boundaries. A bit cannot be programmed ments for the chip erase command sequence.
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data# Any com mand s wr i tten to th e chip d ur ing th e
Polling algorithm to indicate the operation was suc- Embedded Erase algorithm are ignored. Note that a
cessful. However, a succeeding read will show that the hardware reset during the chip erase operation imme-
data is still “0”. Only erase operations can convert a “0” diately terminates the operation. The Chip Erase
to a “1”. command sequence should be reinitiated once the
device has returned to reading array data, to ensure
data integrity.

Am29F200B 13
The system can determine the status of the erase oper- should be reinitiated once the device has returned to
ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write reading array data, to ensure data integrity.
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
device returns to reading array data and addresses are
no longer latched. The system can determine the
no longer latched.
status of the erase operation by using DQ7, DQ6, DQ2,
Figure 3 illustrates the algorithm for the erase opera- or RY/BY#. Refer to “Write Operation Status” for infor-
tion. See the Erase/Program Operations tables in “AC mation on these status bits.
Characteristics” for parameters, and to the Chip/Sector
Figure 3 illustrates the algorithm for the erase opera-
Erase Operation Timings for timing waveforms.
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Sector Erase Command Sequence
the Sector Erase Operations Timing diagram for timing
Sector erase is a six bus cycle operation. The sector waveforms.
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two Erase Suspend/Erase Resume Commands
additional unlock write cycles are then followed by the
The Erase Suspend command allows the system to
address of the sector to be erased, and the sector
interrupt a sector erase operation and then read data
erase command. The Command Definitions table
from, or program data to, any sector not selected for
shows the address and data requirements for the
erasure. This command is valid only during the sector
sector erase command sequence.
erase operation, including the 50 µs time-out period
The device does not require the system to preprogram during the sector erase command sequence. The
the memory prior to erase. The Embedded Erase algo- Erase Suspend command is ignored if written during
rithm automatically programs and verifies the sector for the chip erase operation or Embedded Program algo-
an all zero data pattern prior to electrical erase. The rithm. Writing the Erase Suspend command during the
system is not required to provide any controls or Sector Erase time-out immediately terminates the
timings during these operations. time-out period and suspends the erase operation.
Addresses are “don’t-cares” when writing the Erase
After the command sequence is written, a sector erase
Suspend command.
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com- When the Erase Suspend command is written during a
mands may be written. Loading the sector erase buffer sector erase operation, the device requires a maximum
may be done in any sequence, and the number of of 20 µs to suspend the erase operation. However,
sectors may be from one sector to all sectors. The time when the Erase Suspend command is written during
between these additional cycles must be less than 50 the sector erase time-out, the device immediately ter-
µs, otherwise the last address and command might not minates the time-out period and suspends the erase
be accepted, and erasure may begin. It is recom- operation.
mended that processor interrupts be disabled during
After the erase operation has been suspended, the
this time to ensure all commands are accepted. The
system can read array data from or program data to
interrupts can be re-enabled after the last Sector Erase
any sector not selected for erasure. (The device “erase
command is written. If the time between additional
suspends” all sectors selected for erasure.) Normal
sector erase commands can be assumed to be less
read and write timings and command definitions apply.
than 50 µs, the system need not monitor DQ3. Any
Reading at any address within erase-suspended
command other than Sector Erase or Erase
sectors produces status data on DQ7–DQ0. The
Suspend during the time-out period resets the
system can use DQ7, or DQ6 and DQ2 together, to
device to reading array data. The system must
determine if a sector is actively erasing or is erase-sus-
rewrite the command sequence and any additional
pended. See “Write Operation Status” for information
sector addresses and commands.
on these status bits.
The system can monitor DQ3 to determine if the sector
After an erase-suspended program operation is com-
erase timer has timed out. (See the “DQ3: Sector Erase
plete, the system can once again read array data within
Timer” section.) The time-out begins from the rising
non-suspended sectors. The system can determine
edge of the final WE# pulse in the command sequence.
the status of the program operation using the DQ7 or
Once the sector erase operation has begun, only the DQ6 status bits, just as in the standard program oper-
Erase Suspend command is valid. All other commands a tio n. See “Wr ite Operation S tatus” for m ore
are ignored. Note that a hardware reset during the information.
sector erase operation immediately terminates the
The system may also write the autoselect command
operation. The Sector Erase command sequence
sequence when the device is in the Erase Suspend

14 Am29F200B
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the START
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information. Write Erase
Command Sequence
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another Data Poll
Erase Suspend command can be written after the from System
device has resumed erasing. Embedded
Erase
algorithm
in progress
No
Data = FFh?

Yes

Erasure Completed

21526B-7

Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.

Figure 3. Erase Operation

Am29F200B 15
 Table 5. Am29F200B Command Definitions
Bus Cycles (Notes 2–5)

Cycles
Command
Sequence First Second Third Fourth Fifth Sixth
(Note 1) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0
Word 555 2AA 555
Manufacturer ID 4 AA 55 90 X00 01
Byte AAA 555 AAA
Autoselect (Note 8)

Device ID, Word 555 2AA 555 X01 2251

4 AA 55 90
Top Boot Block Byte AAA 555 AAA X02 51
Device ID, Word 555 2AA 555 X01 2257
4 AA 55 90
Bottom Boot Block Byte AAA 555 AAA X02 57
(SA) XX00
Word 555 2AA 555
Sector Protect Verify X02 XX01
4 AA 55 90
(Note 9) (SA) 00
Byte AAA 555 AAA
X04 01
Word 555 2AA 555
Program 4 AA 55 A0 PA PD
Byte AAA 555 AAA
Word 555 2AA 555 555 2AA 555
Chip Erase 6 AA 55 80 AA 55 10
Byte AAA 555 AAA AAA 555 AAA
Word 555 2AA 555 555 2AA
Sector Erase 6 AA 55 80 AA 55 SA 30
Byte AAA 555 AAA AAA 555
Erase Suspend (Note 10) 1 XXX B0
Erase Resume (Note 11) 1 XXX 30

Legend:
X = Don’t care PD = Data to be programmed at location PA. Data latches on the
RA = Address of the memory location to be read. rising edge of WE# or CE# pulse, whichever happens first.

RD = Data read from location RA during read operation. SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.

Notes:
1. See Table 1 for description of bus operations. 8. The fourth cycle of the autoselect command sequence is a
2. All values are in hexadecimal. read cycle.

3. Except when reading array or autoselect data, all bus cycles 9. The data is 00h for an unprotected sector and 01h for a
are write operations. protected sector. See “Autoselect Command Sequence” for
more information.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles. 10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
5. Address bits A16–A11 are don’t cares for unlock and mode. The Erase Suspend command is valid only during a
command cycles, unless SA or PA required. sector erase operation.
6. No unlock or command cycles required when reading array 11. The Erase Resume command is valid only during the Erase
data. Suspend mode.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).

16 Am29F200B
WRITE OPERATION STATUS
The device provides several bits to determine the Table 1 shows the outputs for Data# Polling on DQ7.
status of a write operation: DQ2, DQ3, DQ5, DQ6, Figure 4 shows the Data# Polling algorithm.
DQ7, and RY/BY#. Table 1 and the following subsec-
tions describe the functions of these bits. DQ7, RY/
BY#, and DQ6 each offer a method for determining
whether a program or erase operation is complete or in START
progress. These three bits are discussed first.

DQ7: Data# Polling

Read DQ7–DQ0
The Data# Polling bit, DQ7, indicates to the host Addr = VA
system whether an Embedded Algorithm is in progress
or completed, or whether the device is in Erase Sus-
pend. Data# Polling is valid after the rising edge of the
final WE# pulse in the program or erase command
sequence. DQ7 = Data? Yes

During the Embedded Program algorithm, the device

outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to No
programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device No
outputs the datum programmed to DQ7. The system DQ5 = 1?
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for Yes
approximately 2 µs, then the device returns to reading
array data. Read DQ7–DQ0
During the Embedded Erase algorithm, Data# Polling Addr = VA
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output Yes
described for the Embedded Program algorithm: the DQ7 = Data?
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of No
the sectors selected for erasure to read valid status
information on DQ7. FAIL PASS

After an erase command sequence is written, if all

sectors selected for erasing are protected, Data# Notes:
Polling on DQ7 is active for approximately 100 µs, then 1. VA = Valid address for programming. During a sector
the device returns to reading array data. If not all erase operation, a valid address is an address within any
selected sectors are protected, the Embedded Erase sector selected for erasure. During chip erase, a valid
algorithm erases the unprotected sectors, and ignores address is any non-protected sector address.
the selected sectors that are protected. 2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
21526B-8
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while Figure 4. Data# Polling Algorithm
Output Enable (OE#) is asserted low. The Data#
Polling Timings (During Embedded Algorithms) figure
in the “AC Characteristics” section illustrates this.

Am29F200B 17
RY/BY#: Ready/Busy# The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 5 for the toggle bit
The RY/BY# is a dedicated, open-drain output pin that
algorithm, and to the Toggle Bit Timings figure in the
indicates whether an Embedded Algorithm is in
“AC Characteristics” section for the timing diagram.
progress or complete. The RY/BY# status is valid after
The DQ2 vs. DQ6 figure shows the differences
the rising edge of the final WE# pulse in the command
between DQ2 and DQ6 in graphical form. See also the
sequence. Since RY/BY# is an open-drain output,
subsection on “DQ2: Toggle Bit II”.
several RY/BY# pins can be tied together in parallel
with a pull-up resistor to VCC.
DQ2: Toggle Bit II
If the output is low (Busy), the device is actively erasing The “Toggle Bit II” on DQ2, when used with DQ6, indi-
or programming. (This includes programming in the cates whether a particular sector is actively erasing
Erase Suspend mode.) If the output is high (Ready), (that is, the Embedded Erase algorithm is in progress),
the device is ready to read array data (including during or whether that sector is erase-suspended. Toggle Bit
the Erase Suspend mode), or is in the standby mode. II is valid after the rising edge of the final WE# pulse in
Table 1 shows the outputs for RY/BY#. The timing dia- the command sequence.
grams for read, reset, program, and erase shows the DQ2 toggles when the system reads at addresses
relationship of RY/BY# to other signals. within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
DQ6: Toggle Bit I control the read cycles.) But DQ2 cannot distinguish
Toggle Bit I on DQ6 indicates whether an Embedded whether the sector is actively erasing or is erase-sus-
Program or Erase algorithm is in progress or complete, pended. DQ6, by comparison, indicates whether the
or whether the device has entered the Erase Suspend device is actively erasing, or is in Erase Suspend, but
mode. Toggle Bit I may be read at any address, and is cannot distinguish which sectors are selected for era-
valid after the rising edge of the final WE# pulse in the sure. Thus, both status bits are required for sector and
command sequence (prior to the program or erase mode information. Refer to Table 1 to compare outputs
operation), and during the sector erase time-out. for DQ2 and DQ6.
During an Embedded Program or Erase algorithm Figure 5 shows the toggle bit algorithm in flowchart
operation, successive read cycles to any address form, and the section “DQ2: Toggle Bit II” explains the
cause DQ6 to toggle. (The system may use either OE# algorithm. See also the “DQ6: Toggle Bit I” subsection.
or CE# to control the read cycles.) When the operation Refer to the Toggle Bit Timings figure for the toggle bit
is complete, DQ6 stops toggling. timing diagram. The DQ2 vs. DQ6 figure shows the dif-
ferences between DQ2 and DQ6 in graphical form.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles
Reading Toggle Bits DQ6/DQ2
for approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Refer to Figure 5 for the following discussion. When-
Embedded Erase algorithm erases the unprotected ever the system initially begins reading toggle bit
sectors, and ignores the selected sectors that are status, it must read DQ7–DQ0 at least twice in a row to
protected. determine whether a toggle bit is toggling. Typically, a
system would note and store the value of the toggle bit
The system can use DQ6 and DQ2 together to deter- after the first read. After the second read, the system
mine whether a sector is actively erasing or is erase- would compare the new value of the toggle bit with the
suspended. When the device is actively erasing (that is, first. If the toggle bit is not toggling, the device has com-
the Embedded Erase algorithm is in progress), DQ6 pleted the program or erase operation. The system can
toggles. When the device enters the Erase Suspend read array data on DQ7–DQ0 on the following read
mode, DQ6 stops toggling. However, the system must cycle.
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use However, if after the initial two read cycles, the system
DQ7 (see the subsection on “DQ7: Data# Polling”). determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
If a program address falls within a protected sector, high (see the section on DQ5). If it is, the system
DQ6 toggles for approximately 2 µs after the program should then determine again whether the toggle bit is
command sequence is written, then returns to reading toggling, since the toggle bit may have stopped tog-
array data. gling just as DQ5 went high. If the toggle bit is no longer
DQ6 also toggles during the erase-suspend-program toggling, the device has successfully completed the
mode, and stops toggling once the Embedded program or erase operation. If it is still toggling, the
Program algorithm is complete. device did not complete the operation successfully, and

18 Am29F200B
the system must write the reset command to return to of DQ3 prior to and following each subsequent sector
reading array data. erase command. If DQ3 is high on the second status
check, the last command might not have been
The remaining scenario is that the system initially
accepted. Table 1 shows the outputs for DQ3.
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start START
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 5).
Read DQ7–DQ0
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure Read DQ7–DQ0 (Note 1)
condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro- Toggle Bit No
grammed to “0.” Only an erase operation can change = Toggle?
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has Yes
exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the No
DQ5 = 1?
reset command to return the device to reading array
data.
Yes
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
Read DQ7–DQ0 (Notes
system may read DQ3 to determine whether or not an 1, 2)
Twice
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com- Toggle Bit No
mand. When the time-out is complete, DQ3 switches = Toggle?
from “0” to “1.” The system may ignore DQ3 if the
system can guarantee that the time between additional
sector erase commands will always be less than 50 µs. Yes
See also the “Sector Erase Command Sequence” Program/Erase
section. Operation Not Program/Erase
Complete, Write Operation Complete
After the sector erase command sequence is written, Reset Command
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has Notes:
accepted the command sequence, and then read DQ3. 1. Read toggle bit twice to determine whether or not it is
If DQ3 is “1”, the internally controlled erase cycle has toggling. See text.
begun; all further commands (other than Erase Sus- 2. Recheck toggle bit because it may stop toggling as DQ5
pend) are ignored until the erase operation is complete. changes to “1”. See text.
If DQ3 is “0”, the device will accept additional sector 21526B-9
erase commands. To ensure the command has been
accepted, the system software should check the status Figure 5. Toggle Bit Algorithm

Am29F200B 19
 Table 1. Write Operation Status
DQ7 DQ5 DQ2
Operation (Note 1) DQ6 (Note 2) DQ3 (Note 1) RY/BY#
Standard Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Mode Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0
Reading within Erase
1 No toggle 0 N/A Toggle 1
Erase Suspended Sector
Suspend Reading within Non-Erase
Data Data Data Data Data 1
Mode Suspended Sector
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.

20 Am29F200B
ABSOLUTE MAXIMUM RATINGS OPERATING RANGES
Storage Temperature Commercial (C) Devices
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature (TA) . . . . . . . . . . .0°C to +70°C
Ambient Temperature Industrial (I) Devices
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Ambient Temperature (TA) . . . . . . . . .–40°C to +85°C
Voltage with Respect to Ground
Extended (E) Devices
VCC (Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
Ambient Temperature (TA) . . . . . . . .–55°C to +125°C
A9, OE#, and
RESET# (Note 2). . . . . . . . . . . . –2.0 V to +12.5 V VCC Supply Voltages

All other pins (Note 1) . . . . . . . . . –0.5 V to +7.0 V VCC for ± 5% devices . . . . . . . . . . +4.75 V to +5.25 V

Output Short Circuit Current (Note 3) . . . . . . 200 mA VCC for± 10% devices . . . . . . . . . . . . +4.5 V to +5.5 V
Notes: Note: Operating ranges define those limits between which
1. Minimum DC voltage on input or I/O pins is –0.5 V. During the functionality of the device is guaranteed.
voltage transitions, input or I/O pins may overshoot VSS
to –2.0 V for periods of up to 20 ns. See Figure 6.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot
to VCC +2.0 V for periods up to 20 ns. See Figure 7.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –2.0 V for periods of up
to 20 ns. See Figure 6. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to +13.5 V for periods
up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the op-
erational sections of this data sheet is not implied. Exposure
of the device to absolute maximum rating conditions for ex-
tended periods may affect device reliability.

20 ns 20 ns
20 ns
+0.8 V VCC
+2.0 V
–0.5 V VCC
+0.5 V
–2.0 V
2.0 V
20 ns
20 ns 20 ns

21526B-10 21526B-11

Figure 6. Maximum Negative Overshoot Figure 7. Maximum Positive Overshoot

Waveform Waveform

Am29F200B 21
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol Parameter Description Test Conditions Min Max Unit

ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA

A9, OE# , RESET# Input Load VCC = VCC Max,

ILIT 50 µA
Current A9, OE# , RESET# = 12.5 V

ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA

Byte 40
ICC1 VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH mA
Word 50

VCC Active Program/Erase Current

ICC2 CE# = VIL, OE# = VIH 60 mA
(Notes 2, 3, 4)

ICC3 VCC Standby Current (Note 2) VCC = VCC Max, CE# = VIH, OE# = VIH 1.0 mA

VIL Input Low Voltage –0.5 0.8 V

VIH Input High Voltage 2.0 VCC + 0.5 V

Voltage for Autoselect and Temporary

VID VCC = 5.0 V 11.5 12.5 V
Sector Unprotect

VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC Min 0.45 V

VOH Output High Voltage IOH = –2.5 mA, VCC = VCC Min 2.4 V

VLKO Low VCC Lock-Out Voltage 3.2 4.2 V

Notes:
1. The ICC current is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Program or Erase Algorithm is in progress.
4. Not 100% tested.

22 Am29F200B
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol Parameter Description Test Conditions Min Typ Max Unit

ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA

A9, OE# , RESET# Input VCC = VCC Max;

ILIT 50 µA
Load Current A9, OE# , RESET# = 12.5 V

ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA

VCC Active Read Current Byte 20 40

ICC1 CE# = VIL, OE# = VIH mA
(Notes 1, 2) Word 28 50

VCC Active Program/Erase

ICC2 CE# = VIL, OE# = VIH 30 50 mA
Current (Notes 2, 3, 4)

VCC Standby Current

ICC3 CE# = VCC ± 0.5 V, OE# = VIH 1 5 µA
Note (Note 5)

VIL Input Low Voltage –0.5 0.8 V

VIH Input High Voltage 0.7 x VCC VCC + 0.3 V

Voltage for Autoselect and

VID VCC = 5.0 V 11.5 12.5 V
Temporary Sector Unprotect

VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC Min 0.45 V

VOH1 IOH = –2.5 mA, VCC = VCC Min 0.85 VCC V

Output Low Voltage
VOH2 IOH = –100 µA, VCC = VCC Min VCC – 0.4 V

VLKO Low VCC Lock-Out Voltage 3.2 4.2 V

Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Program or Erase Algorithm is in progress.
4. Not 100% tested.
5. ICC3 for extended temperature is 20 µA max (>+85°C).

Am29F200B 23
TEST CONDITIONS
Table 6. Test Specifications
5.0
-45, -50, All
Test Condition -55 others Unit
2.7 kΩ
Device Output Load 1 TTL gate
Under
Test Output Load Capacitance, CL
30 100 pF
(including jig capacitance)
CL 6.2 kΩ
Input Rise and Fall Times 5 20 ns

Input Pulse Levels 0.0–3.0 0.45–2.4 V

Input timing measurement

1.5 0.8, 2.0 V
reference levels
Note:
Diodes are IN3064 or equivalents. Output timing measurement
1.5 0.8, 2.0 V
reference levels
21526B-12
Figure 8. Test Setup

KEY TO SWITCHING WAVEFORMS

WAVEFORM INPUTS OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted Changing, State Unknown

Does Not Apply Center Line is High Impedance State (High Z)

KS000010-PAL

24 Am29F200B
AC CHARACTERISTICS
Read Operations
Parameter Speed Options

JEDEC Std Description Test Setup -45 -50 -55 -70 -90 -120 Unit

tAVAV tRC Read Cycle Time (Note 1) Min 45 50 55 70 90 120 ns

CE# = VIL
tAVQV tACC Address to Output Delay Max 45 50 55 70 90 120 ns
OE# = VIL

tELQV tCE Chip Enable to Output Delay OE# = VIL Max 45 50 55 70 90 120 ns

Output Enable to Output Delay

tGLQV tOE Max 30 30 30 30 35 50 ns
(Note 1)

Chip Enable to Output High Z

tEHQZ tDF Max 20 20 20 20 20 30 ns
(Note 1)

Output Enable to Output High Z

tGHQZ tDF Max 20 20 20 20 20 30 ns
(Note 1)

Output Enable Read Min 0 ns

tOEH Hold Time Toggle and
(Note 1) Min 10 ns
Data# Polling

Output Hold Time From

tAXQX tOH Addresses, CE# or OE#, Min 0 ns
Whichever Occurs First (Note 1)

Notes:
1. Not 100% tested.
2. See Figure 8 and Table 6 for test specifications

tRC

Addresses Addresses Stable

tACC
CE#

tDF
tOE
OE#
tOEH

WE# tCE
tOH
HIGH Z HIGH Z
Outputs Output Valid

RESET#

RY/BY#
0V
Figure 9. Read Operations Timings

Am29F200B 25
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter

JEDEC Std Description Test Setup All Speed Options Unit

RESET# Pin Low (During Embedded

tREADY Max 20 µs
Algorithms) to Read or Write (See Note)

RESET# Pin Low (NOT During Embedded

tREADY Max 500 ns
Algorithms) to Read or Write (See Note)

tRP RESET# Pulse Width Min 500 ns

tRH RESET# High Time Before Read (See Note) Min 50 ns

tRB RY/BY# Recovery Time Min 0 ns

Note: Not 100% tested.

RY/BY#

CE#, OE#
tRH

RESET#

tRP
tReady

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

tReady
RY/BY#

tRB

CE#, OE#

RESET#

tRP

21526B-13
Figure 10. RESET# Timings

26 Am29F200B
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter Speed Options

JEDEC Std Description -45 -50 -55 -70 -90 -120 Unit

tELFL/tELFH CE# to BYTE# Switching Low or High Max 5 ns

tFLQZ BYTE# Switching Low to Output HIGH Z Max 20 20 20 20 20 30 ns

tFHQV BYTE# Switching High to Output Active Max 45 50 55 70 90 120 ns

CE#

OE#

BYTE#

tELFL
BYTE# DQ0–DQ14 Data Output Data Output
Switching (DQ0–DQ14) (DQ0–DQ7)
from word
to byte
mode DQ15/A-1 DQ15 Address
Output Input

tFLQZ

tELFH
BYTE#

BYTE#
Switching
from byte DQ0–DQ14 Data Output Data Output
to word (DQ0–DQ7) (DQ0–DQ14)
mode
DQ15/A-1 Address DQ15
Input Output

tFHQV

21526B-14
Figure 11. BYTE# Timings for Read Operations

CE#

The falling edge of the last WE# signal

WE#

BYTE#
tSET
(tAS)
tHOLD (tAH)
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
21526B-15
Figure 12. BYTE# Timings for Write Operations

Am29F200B 27
AC CHARACTERISTICS
Erase/Program Operations
Parameter Speed Options

JEDEC Std Description -45 -50 -55 -70 -90 -120 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 45 50 55 70 90 120 ns

tAVWL tAS Address Setup Time Min 0 ns

tWLAX tAH Address Hold Time Min 45 45 45 45 45 50 ns

tDVWH tDS Data Setup Time Min 25 25 25 30 45 50 ns

tWHDX tDH Data Hold Time Min 0 ns

tOES Output Enable Setup Time Min 0 ns

Read Recovery Time Before Write

tGHWL tGHWL Min 0 ns
(OE# High to WE# Low)

tELWL tCS CE# Setup Time Min 0 ns

tWHEH tCH CE# Hold Time Min 0 ns

tWLWH tWP Write Pulse Width Min 30 30 30 35 45 50 ns

tWHWL tWPH Write Pulse Width High Min 20 ns

Programming Operation Byte Typ 7

tWHWH1 tWHWH1 µs
(Note 2) Word Typ 12

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec

tVCS VCC Setup Time (Note 1) Min 50 µs

tRB Recovery Time from RY/BY# Min 0 ns

tBUSY Program/Erase Valid to RY/BY# Delay Min 30 30 30 30 35 50 ns

Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.

28 Am29F200B
AC CHARACTERISTICS
Program Command Sequence (last two cycles) Read Status Data (last two cycles)
tWC tAS

Addresses 555h PA PA PA
tAH

CE#
tCH
tGHWL
OE#

tWP tWHWH1

WE#
tWPH
tCS
tDS
tDH

Data A0h PD Status DOUT

tBUSY tRB

RY/BY#
tVCS

VCC

Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
21526B-16
Figure 13. Program Operation Timings

Am29F200B 29
AC CHARACTERISTICS
Erase Command Sequence (last two cycles) Read Status Data

tWC tAS
Addresses 2AAh SA VA VA
555h for chip erase
tAH
CE#
tGHWL
OE# tCH

tWP
WE#
tWPH tWHWH2
tCS
tDS
tDH
In
Data 55h 30h Progress Complete

10 for Chip Erase

tBUSY tRB

RY/BY#
tVCS
VCC

Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (”see “Write Operation Status”).
2. Illustration shows device in word mode.
21526B-17
Figure 14. Chip/Sector Erase Operation Timings

30 Am29F200B
AC CHARACTERISTICS
tRC
Addresses VA VA VA
tACC
tCE
CE#

tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ7 Complement Complement True Valid Data

High Z
DQ0–DQ6 Status Data Status Data True Valid Data

tBUSY

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
21526B-18
Figure 15. Data# Polling Timings (During Embedded Algorithms)

tRC
Addresses VA VA VA VA
tACC
tCE
CE#

tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ6/DQ2 Valid Status Valid Status Valid Status Valid Data
(first read) (second read) (stops toggling)
tBUSY

RY/BY#

Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
21526B-19
Figure 16. Toggle Bit Timings (During Embedded Algorithms)

Am29F200B 31
AC CHARACTERISTICS
Enter
Embedded Erase Enter Erase Erase
Erasing Suspend Suspend Program Resume

WE# Erase Erase Suspend Erase Erase Suspend Erase Erase

Read Suspend Read Complete
Program

DQ6

DQ2

Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-sus-
pended sector.
21526B-20
Figure 17. DQ2 vs. DQ6

Temporary Sector Unprotect

Parameter

JEDEC Std Description All Speed Options Unit

tVIDR VID Rise and Fall Time (See Note) Min 500 ns

RESET# Setup Time for Temporary Sector

tRSP Min 4 µs
Unprotect

Note: Not 100% tested.

12 V

RESET#
0 or 5 V 0 or 5 V
tVIDR tVIDR
Program or Erase Command Sequence

CE#

WE#
tRSP

RY/BY#

21526B-21
Figure 18. Temporary Sector Unprotect Timing Diagram

32 Am29F200B
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter Speed Options

JEDEC Std Description -45 -50 -55 -70 -90 -120 Unit

tAVAV tWC Write Cycle Time (Note 1) Min 45 50 55 70 90 120 ns

tAVEL tAS Address Setup Time Min 0 ns

tELAX tAH Address Hold Time Min 45 45 45 45 45 50 ns

tDVEH tDS Data Setup Time Min 25 25 25 30 45 50 ns

tEHDX tDH Data Hold Time Min 0 ns

tOES Output Enable Setup Time Min 0 ns

Read Recovery Time Before Write

tGHEL tGHEL Min 0 ns
(OE# High to WE# Low)

tWLEL tWS WE# Setup Time Min 0 ns

tEHWH tWH WE# Hold Time Min 0 ns

tELEH tCP CE# Pulse Width Min 30 30 30 35 45 50 ns

tEHEL tCPH CE# Pulse Width High Min 20 ns

Programming Operation Byte Typ 7

tWHWH1 tWHWH1 µs
(Note 2) Word Typ 12

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec

Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.

Am29F200B 33
AC CHARACTERISTICS

555 for program PA for program

2AA for erase SA for sector erase
555 for chip erase
Data# Polling

Addresses PA
tWC tAS
tAH
tWH

WE#
tGHEL
OE#
tCP tWHWH1 or 2

CE#
tWS tCPH
tBUSY
tDS
tDH
DQ7# DOUT
Data
tRH A0 for program PD for program
55 for erase 30 for sector erase
10 for chip erase

RESET#

RY/BY#
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence, with the device in word mode.
21526B-22
Figure 19. Alternate CE# Controlled Write Operation Timings

34 Am29F200B
ERASE AND PROGRAMMING PERFORMANCE
Limits

Parameter Typ (Note 1) Max (Note 2) Unit Comments

Sector Erase Time 1 8 sec Excludes 00h programming prior to

Chip Erase Time 5 sec erasure (Note 4)

Byte Programming Time 7 300 µs

Excludes system-level overhead
Word Programming Time 12 500 µs
(Note 5)
Chip Programming Time (Note 3) 1.8 5.4 sec

Notes:
1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (VCC = 4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS
Parameter Description Min Max

Input Voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V

VCC Current –100 mA +100 mA

Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.

TSOP AND SO PIN CAPACITANCE

Parameter
Symbol Parameter Description Test Setup Typ Max Unit

CIN Input Capacitance VIN = 0 6 7.5 pF

COUT Output Capacitance VOUT = 0 8.5 12 pF

CIN2 Control Pin Capacitance VIN = 0 8 10 pF

Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.

DATA RETENTION
Parameter Test Conditions Min Unit

150°C 10 Years
Minimum Pattern Data Retention Time
125°C 20 Years

Am29F200B 35
PHYSICAL DIMENSIONS
SO 044—44-Pin Small Outline Package (measured in millimeters)

44 23

13.10 15.70
13.50 16.30

1 22
1.27 NOM.

TOP VIEW

28.00
28.40

2.17 0.10
2.80 0.21
2.45 MAX.
0°
SEATING 8° 0.60
0.35 0.10 PLANE 1.00
0.50 0.35
END VIEW
SIDE VIEW 16-038-SO44-2
SO 044
DF83
8-8-96 lv

36 Am29F200B
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters)

0.95
1.05

Pin 1 I.D.
1 48

11.90
12.10

0.50 BSC

24 25

18.30 0.05
18.50 0.15

19.80
20.20

16-038-TS48-2
0.08 TS 048
1.20 0.20 DT95
MAX 8-8-96 lv
0.10
0.21
0°
0.25MM (0.0098") BSC 5°

0.50
0.70

Am29F200B 37
PHYSICAL DIMENSIONS
TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters)

0.95
1.05

Pin 1 I.D.
1 48

11.90
12.10

0.50 BSC

24 25

18.30 0.05
18.50 0.15

19.80 SEATING PLANE

20.20

16-038-TS48
TSR048
0.08 DT95
1.20 0.20 8-8-96 lv
MAX 0.10
0.21
0°
0.25MM (0.0098") BSC 5°

0.50
0.70

38 Am29F200B
REVISION SUMMARY
Revision A AC Characteristics
Global: Made formatting and layout consistent with other Figure 15. Data# Polling Timings (During Embedded
data sheets. Used updated common tables and diagrams Algorithms): Added text to note.
Figure 16. Toggle Bit Timings (During Embedded Algo-
Revision B rithms): Added text to note.
Distinctive Characteristics
Added bullet for 20-year data retention at 125°C Revision B+1 (April 12, 1999)
Product Selector Guide
Ordering Information
The 55 ns option now has a VCC operating range of
Optional Processing: Deleted “B = Burn-in”.
±10%.
DC Characteristics—TTL/NMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifi- Revision B+2 (July 2, 1999)
cations are tested with VCC = VCCmax”. Global
DC Characteristics—CMOS Compatible Added references to availability of device in Known
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifi- Good Die (KGD) form.
cations are tested with VCC = VCCmax”.

Trademarks

Copyright © 1999 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29F200B 39