TM

HGT1S14N37G3VLS, HGTP14N37G3VL

Data Sheet July 2000 File Number 4857

14A, 370V N-Channel, Logic Level, Voltage Features

Clamping IGBTs • Logic Level Gate Drive
This N-Channel IGBT is a MOS gated, logic level device
• Internal Voltage Clamp
which is intended to be used as an ignition coil driver in
automotive ignition circuits. Unique features include an • ESD Gate Protection
active voltage clamp between the collector and the gate • TJ = 175oC
which provides Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide ESD • Internal Series and Shunt Gate Resistors
protection for the logic level gate. Both a series resistor and • Low Conduction Loss
a shunt resister are provided in the gate circuit.
• Ignition Energy Capable
Formerly Developmental Type TA49169.
Packaging
Ordering Information JEDEC TO-263AB

PART NUMBER PACKAGE BRAND

HGT1S14N37G3VLS TO-263AB 14N37GVL COLLECTOR

(FLANGE)
HGTP14N37G3VL TO-220AB 14N37GVL G
E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A

Symbol
COLLECTOR
JEDEC TO-220AB

E
R1 C
G
GATE

R2

COLLECTOR
EMITTER (FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

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 HGT1S14N37G3VLS, HGTP14N37G3VL

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGT1S14N37G3VLS,
HGTP14N37G3VL UNITS
Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 380 V
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 25 A
at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 15 A
at L = 3mH, TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS 340 mJ
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 136 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/oC
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG -55 to 175 oC

Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175 oC

Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . . . .ESD 5 kV

Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . . . .ESD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. May be exceeded if IGEM is limited to 10mA.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BVCER IC = 10mA, RG = 1kΩ, VGE = 0V, 320 350 380 V
TJ = -55oC to 175oC (Figure 16)
Gate to Emitter Plateau Voltage VGEP IC = 6.5A, VCE = 12V - 2.76 - V
Gate Charge QG(ON) IC = 6.5A, VCE = 12V, VGE = 5V - 27 - nC
(Figure 16)
Collector to Emitter Clamp Breakdown Voltage BVCE(CL) IC = 15A, RG = 1kΩ 320 350 380 V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA 24 28 - V
Collector to Emitter Leakage Current ICES VCE = 300V, VGE = 0V TJ = 25oC - - 40 µA
(Figure 13)
TJ = 175oC - - 250 µA
VCE = 250V, TJ = 25oC - - 10 µA
VGE = 0V (Figure 13)
TJ = 175oC - - 75 µA

Emitter to Collector Leakage Current IECS VEC = -24V, TJ = 25oC - - 10 mA

VGE = 0V (Figure 13)
TJ = 175oC - - 50 mA
Collector to Emitter On-State Voltage VCE(ON) IC = 6A, VGE = 4.0V TJ = -55oC - 1.3 1.45 V
(Figures 3 through 9)
TJ = 25oC - 1.25 1.6 V
IC = 10A, VGE = 4.5V TJ = 25oC - 1.45 1.75 V
(Figures 3 through 9)
TJ = 175oC - 1.5 1.9 V
IC = 14A, VGE = 5V TJ = 25oC - 1.6 2 V
(Figures 3 through 9)
TJ = 175oC - 1.7 2.3 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 1mA, VCE = VGE (Figure 12) 1.3 1.8 2.2 V
Gate Series Resistance R1 - 70 150 Ω
Gate to Emitter Resistance R2 10 18 26 kΩ
Gate to Emitter Leakage Current IGES VGE = ±10V ±310 ±500 ±1000 µA

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 HGT1S14N37G3VLS, HGTP14N37G3VL

Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Gate to Emitter Breakdown Voltage BVGES IGES = ±2mA ±12 ±14 - V
Current Turn-On Delay Time - td(ON)I IC = 6.5A, RG = 1kΩ, VGE = 5V, - 1 4 µs
Resistive Load RL = 2.1Ω, VDD = 14V, TJ = 150oC
(Figure 14)
Current Turn-On Rise Time - trI IC = 6.5A, RG = 1kΩ - 3 7 µs
Resistive Load VGE = 5V, RL = 2.1Ω
VDD = 14V, TJ = 150oC (Figure 14)
Current Turn-Off Time - td(OFF)I + tfI IC = 6.5A, RG = 1kΩ - 10 30 µs
Inductive Load VGE = 5V, L = 300µH
VDD = 300V, TJ = 150oC (Figure 14)
Inductive Use Test ISCIS L = 3mH, VG = 5V, TC = 150oC 11.5 - - A
RG = 1kΩ
TC = 25oC 15 - - A
(Figures 1 and 2)
Thermal Resistance RθJC (Figure 18) - - 1.1 oC/W

Typical Performance Curves Unless Otherwise Specified

ISCIS , INDUCTIVE SWITCHING CURRENT (A)

60 56

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

RG = 1kΩ, VGE = 5V RG = 1kΩ, VGE = 5V
52 48
ISCIS CAN BE LIMITED BY gfs at VGE = 5V ISCIS CAN BE LIMITED BY gfs at VGE = 5V
44 40

36 32

28 24
TJ = 25oC
TJ = 25oC
20 16

12 TJ = 150oC 8 TJ = 150oC

4 0
40 80 120 160 200 0 2 4 6 8 10
tAV, TIME IN AVALANCHE (ms) L, INDUCTANCE (mH)

FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE CURRENT vs INDUCTANCE
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1.28 1.50
ICE = 6A
ICE = 10A
1.24
1.46
VGE = 4.0V
1.20

1.42
1.16
VGE = 4.0V

1.12 VGE = 4.5V

1.38
VGE = 4.5V
1.08
1.34 VGE = 5.0V
1.04 VGE = 5.0V

1.00 1.30
-50 25 100 175 -50 25 100 175

TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC)

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE vs JUNCTION TEMPERATURE

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 HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A)

Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

45 45
DUTY CYCLE < 0.5%, TJ = 175oC VGE = 5.0V DUTY CYCLE < 0.5%, TJ = 150oC VGE = 5.0V
PULSE DURATION = 250µs PULSE DURATION = 250µs
VGE = 4.5V
VGE = 4.5V
30 30

VGE = 4.0V VGE = 4.0V

15 15

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

60 70
DUTY CYCLE < 0.5%, TJ = 25oC VGE = 5.0V DUTY CYCLE < 0.5%, TJ = -40oC VGE = 5.0V
PULSE DURATION = 250µs PULSE DURATION = 250µs
50 60
VGE = 4.5V VGE = 4.5V
50
40
40
30 VGE = 4.0V VGE = 4.0V
30
20
20

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)

60 40
VGE TJ = 25oC DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
50 8.0V
32
5.0V
40 4.5V TJ = 150oC
4.0V 24

30 3.5V
3.0V 16
20 2.5V
TJ = 25oC
8
10

TJ = -40oC
0 0
0 1 2 3 4 5 1 2 3 4 5
VCE , COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 10. TRANSFER CHARACTERISTIC

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 HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves Unless Otherwise Specified (Continued)

28 2.0
ICE = 1mA

VGE(TH) , THRESHOLD VOLTAGE (V)

VGE = 5V
ICE , DC COLLECTOR CURRENT (A)

24 1.8 VCE = VGE

20
1.6
16
1.4
12
1.2
8

4 1.0

0 0.8
25 50 75 100 125 150 175 -50 25 100 175

TC , CASE TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 11. DC COLLECTOR CURRENT vs CASE FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE TEMPERATURE

10000 16
ICE = 6.5A, VGE = 5V, RG = 1kΩ
14
LEAKAGE CURRENTS (µA)

1000 VECS = 24V

RESISTIVE tOFF
SWITCHING TIME (µs)

12

100
10 INDUCTIVE tOFF
VCES = 300V

10 8

6
1 VCES = 250V RESISTIVE tON
4

0.1 2
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 13. LEAKAGE CURRENT vs JUNCTION FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
TEMPERATURE

2400 8
IG(REF) = 1mA, RL = 1.865Ω, TJ = 25oC
VGE , GATE TO EMITTER VOLTAGE (V)

FREQUENCY = 1MHz
2000
C, CAPACITANCE (pF)

6
1600
CIES VCE = 12V
1200 4

800
CRES
2
400 VCE = 6V
COES

0 0
0 5 10 15 20 25 0 8 16 24 32 40 48 56
VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 16. GATE CHARGE WAVEFORMS
VOLTAGE

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 HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves Unless Otherwise Specified (Continued)

360
BVCER , BREAKDOWN VOLTAGE (V)

TJ (oC) ICER = 10mA

350 -55
25
150
340 175

330

320
0 2 4 6 8 10

RG , GATE SERIES RESISTANCE (kΩ)

FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE

ZθJC , NORMALIZED THERMAL RESPONSE

100
0.5

0.2
0.1
10-1
0.05

0.02
t1
0.01
PD
10-2 DUTY FACTOR, D = t1 / t2
SINGLE PULSE PEAK TJ = (PD X ZθJC X RθJC) + TC t2

10-5 10-4 10-3 10-2 10-1 100

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuits

3mH R
or LOAD
VDD L

C
C
RG = 1kΩ
RG G +
PULSE DUT VDD
GEN DUT
G 5V -

E
E

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT

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 HGT1S14N37G3VLS, HGTP14N37G3VL

TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE

E A INCHES MILLIMETERS
A1
SYMBOL MIN MAX MIN MAX NOTES
H1
A 0.170 0.180 4.32 4.57 -
TERM. 4
A1 0.048 0.052 1.22 1.32 4, 5
D b 0.030 0.034 0.77 0.86 4, 5
b1 0.045 0.055 1.15 1.39 4, 5
L2 b2 0.310 - 7.88 - 2
c 0.018 0.022 0.46 0.55 4, 5
L1 D 0.405 0.425 10.29 10.79 -
L
1 3 E 0.395 0.405 10.04 10.28 -
b b1 e 0.100 TYP 2.54 TYP 7
e c e1 0.200 BSC 5.08 BSC 7
e1 J1
H1 0.045 0.055 1.15 1.39 -
0.450
TERM. 4
(11.43) J1 0.095 0.105 2.42 2.66 -
L 0.175 0.195 4.45 4.95 -
L1 0.090 0.110 2.29 2.79 4, 6
L3 0.350 L2 0.050 0.070 1.27 1.77 3
(8.89)
b2 L3 0.315 - 8.01 - 2
0.700 NOTES:
(17.78) 1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
0.150
(3.81) for terminal 4.
3 1
3. Solder finish uncontrolled in this area.
0.080 TYP (2.03) 4. Dimension (without solder).
0.062 TYP (1.58)
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from bottom
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.

1.5mm 4.0mm
DIA. HOLE USER DIRECTION OF FEED 2.0mm 1.75mm

TO-263AB C
L
24mm TAPE AND REEL

24mm

16mm

COVER TAPE 40mm MIN.

ACCESS HOLE

30.4mm

13mm

330mm 100mm

GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY. 24.4mm
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.

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 HGT1S14N37G3VLS, HGTP14N37G3VL

TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE

A INCHES MILLIMETERS
ØP E
A1 SYMBOL MIN MAX MIN MAX NOTES
Q A 0.170 0.180 4.32 4.57 -
H1
A1 0.048 0.052 1.22 1.32 -

TERM. 4 b 0.030 0.034 0.77 0.86 3, 4

D
b1 0.045 0.055 1.15 1.39 2, 3
E1 45o c 0.014 0.019 0.36 0.48 2, 3, 4
D1
D 0.590 0.610 14.99 15.49 -
L1
b1 D1 - 0.160 - 4.06 -
E 0.395 0.410 10.04 10.41 -
L b
c E1 - 0.030 - 0.76 -

60o e 0.100 TYP 2.54 TYP 5

1 2 3 e1 0.200 BSC 5.08 BSC 5
e J1 H1 0.235 0.255 5.97 6.47 -
e1
J1 0.100 0.110 2.54 2.79 6
L 0.530 0.550 13.47 13.97 -
L1 0.130 0.150 3.31 3.81 2
LEAD TERMINAL
ØP 0.149 0.153 3.79 3.88 -
Lead No. 1 Gate
Lead No. 2 Collector Q 0.102 0.112 2.60 2.84 -
Lead No. 3 Emitter NOTES:
Term. No. 4 Collector 1. These dimensions are within allowable dimensions of Rev. J of
Mounting Flange JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L1.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 7-97.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com

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