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Features: Elektronische Bauelemente 115ma, 60V N-Channel Enhancement Mode Power MOSFET

This document provides information on an N-channel enhancement mode power MOSFET. It lists key features such as low on resistance, fast switching speed, and low voltage drive capability. It also provides maximum ratings, electrical characteristics, switching characteristics measurement circuit diagrams, and characteristic curves graphs. The MOSFET has a continuous drain current rating of 115mA, a drain-source voltage rating of 60V, and is RoHS compliant and available in a Pb-free SOT-23 package.

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57 views

Features: Elektronische Bauelemente 115ma, 60V N-Channel Enhancement Mode Power MOSFET

This document provides information on an N-channel enhancement mode power MOSFET. It lists key features such as low on resistance, fast switching speed, and low voltage drive capability. It also provides maximum ratings, electrical characteristics, switching characteristics measurement circuit diagrams, and characteristic curves graphs. The MOSFET has a continuous drain current rating of 115mA, a drain-source voltage rating of 60V, and is RoHS compliant and available in a Pb-free SOT-23 package.

Uploaded by

vipin
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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S2N7002K

115mA, 60V
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET

RoHS Compliant Product SOT-23


A Suffix of “-C” specifies halogen & lead-free A
L
3
3

FEATURES Top View C B


1
1 2
3 DRAIN
 Low on resistance. K E 2

 Fast switching speed.


D
 Low-voltage drive. 1
F G H J

GATE
Easily designed drive circuits. *
 Easy to parallel. * Gate Millimeter Millimeter
REF. REF.
 Pb-Free package is available. Pretection Min. Max. Min. Max.
Diode A 2.70 3.04 G - 0.18
 ESD protected:2000V SOURCE 2 B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
DEVICE MARKING: RK F 0.30 0.50

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


PARAMETER SYMBOL RATING UNIT
Drain – Source Voltage VDSS 60 V
Gate – Source Voltage VGSS ±20 V
Continuous ID 115 mA
Drain Current
Pulsed IDP1 0.8 A
Continuous IDR 115 mA
Drain Reverse Current
Pulsed IDRP1 0.8 A
Total Power Dissipation PD2 225 mW
Channel & Storage Temperature TCH, TSTG 150, -55~150 °C
Note: 1. Pulse width ≦10µS, Duty cycle≦1%. 2. When mounted on 1x0.75x0.062 inch glass epoxy board.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
Gate-Source Leakage Current IGSS - - ±10 µA VGS=±20V, VDS=0V
Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V, ID =10µA
Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=60V, VGS=0V
Gate Threshold Voltage VGS(TH) 1 1.85 2.5 V VDS= VGS, ID =250µA

Ω
- - 7.5 VGS=10V, ID=0.5A
Drain-Source On-State Resistance* RDS(ON) *
- - 7.5 VGS=5V, ID=0.05A
Forward Transfer Admittance |YFS|* 80 - - mS VDS=10V, ID=0.2A
Input Capacitance CISS - 25 50 VDS=25V
Output Capacitance COSS - 10 25 pF VGS=0V
Reverse Transfer Capacitance CRSS - 3.0 5.0 f=1MHz
Turn-on Delay Time Td(ON) * - 12 20 VDD≒30V, V Gs=10V
nS
Turn-off Delay Time Td(OFF) * - 20 30 I D=200mA, RL=150Ω, RGS=10Ω
* Pulse width ≦300µS, Duty cycle≦1%

SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT

08-Mar-2010 Rev. B Page 1 of 3


S2N7002K
115mA, 60V
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET

CHARACTERISTIC CURVES

08-Mar-2010 Rev. B Page 2 of 3


S2N7002K
115mA, 60V
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET

CHARACTERISTIC CURVES

08-Mar-2010 Rev. B Page 3 of 3

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