DATASHEET

CD4060BMS FN3317
CMOS 14 Stage Ripple-Carry Binary Counter/Divider and Oscillator Rev 0.00
December 1992

Features Pinout
• High Voltage Type (20V Rating)
Q12 1 16 VDD
• Common Reset
Q13 2 15 Q10
• 12MHz Clock Rate at 15V
Q14 3 14 Q8
• Fully Static Operation Q6 4 13 Q9

• Buffered Inputs and Outputs Q5 5 12 RESET

Q7 6 11 øI
• Schmitt Trigger Input Pulse Line
Q4 7 10 ø0
• Standardized, Symmetrical Output Characteristics
VSS 8 9 ø0
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of Functional Diagram
‘B’ Series CMOS Devices”

Oscillator Features Q4
7
• All Active Components on Chip Q5
5
• RC or Crystal Oscillator Configuration Q6
4
• RC Oscillator Frequency of 690kHz Min. at 15V Q7
R 12 6
14 STAGE Q8
Applications RIPPLE 14
COUNTER Q9
AND 13
• Control counters OSCILLATOR
Q10
øI 11 15
• Timers
Q12
1
• Frequency Dividers
Q13
VSS = 8 2
• Time Delay Circuits VDD = 16
Q14
3
Description
ø0 9
CD4060BMS consists of an oscillator section and 14 ripple
carry binary counter stages. The oscillator configuration allows ø0 10
design of either RC or crystal oscillator circuits. A RESET input
is provided which resets the counter to the all O’s state and dis-
ables the oscillator. A high level on the RESET line accom-
plishes the reset function. All counter stages are master slave
flip-flops. The state of the counter is advanced one step in
binary order on the negative transition of øI (and ø0). All inputs
and outputs are fully buffered. Schmitt trigger action on the
input pulse line permits unlimited input pulse rise and fall times.
The CD4060BMS is supplied in these 16 lead outline pack-
ages:

Braze Seal DIP H4W

Frit Seal DIP H1F
Ceramic Flatpack H6W

FN3317 Rev 0.00 Page 1 of 9

December 1992
CD4060BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V Thermal Resistance . . . . . . . . . . . . . . . . ja jc
(Voltage Referenced to VSS Terminals) Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
o
DC Input Current, Any One Input  10mA Maximum Package Power Dissipation (PD) at +125 C
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
Package Types D, F, K, H For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Linearity at 12mW/oC to 200mW
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
At Distance 1/16 1/32 Inch (1.59mm  0.79mm) from case for For TA = Full Package Temperature Range (All Package Types)
10s Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 10 A
2 +125oC - 1000 A
VDD = 18V, VIN = VDD or GND 3 -55oC - 10 A
oC
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25 -100 - nA
oC
2 +125 -1000 - nA
VDD = 18V 3 -55oC -100 - nA
oC
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25 - 100 nA
o
2 +125 C - 1000 nA
o
VDD = 18V 3 -55 C - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
o
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25 C 0.53 - mA
(Excluding pins 9 & 10) o
IOL10 VDD = 10V, VOUT = 0.5V 1 +25 C 1.4 - mA
IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
o
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25 C - -0.53 mA
(Excluding pins 9 & 10) o
IOH5B VDD = 5V, VOUT = 2.5V 1 +25 C - -1.8 mA
o
IOH10 VDD = 10V, VOUT = 9.5V 1 +25 C - -1.4 mA
IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
o
N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1 +25 C -2.8 -0.7 V
o
P Threshold Voltage VPTH VSS = 0V, IDD = 10A 1 +25 C 0.7 2.8 V
o
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25 C VOH > VOL < V
VDD/2 VDD/2
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
(Note 2)
Input Voltage High VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
(Note 2)
Input Voltage Low VIL VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC - 4 V
(Note 2) VOL < 1.5V
Input Voltage High VIH VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC 11 - V
(Note 2) VOL < 1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented. is 0.050V max.
2. Go/No Go test with limits applied to inputs.

FN3317 Rev 0.00 Page 2 of 9

December 1992
CD4060BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTES 1, 2) SUBGROUPS TEMPERATURE MIN MAX UNITS
Propagation Delay TPHL1 VDD = 5V, VIN = VDD or GND 9 +25oC - 740 ns
Input Pulse Operation TPLH1 oC,
10, 11 +125 -55oC - 999 ns
øI to Q4
Propagation Delay TPHL2 VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
QN to QN + 1 TPLH2 o o
10, 11 +125 C, -55 C - 270 ns
Propagation Delay TPHL3 VDD = 5V, VIN = VDD or GND 9 +25oC - 360 ns
RESET
10, 11 +125oC, -55oC - 486 ns
o
Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25 C - 200 ns
TTLH o o
10, 11 +125 C, -55 C - 270 ns
Maximum Input Pulse FØI VDD = 5V 9 +25oC 3.5 - MHz
Frequency VIN = VDD or GND
10, 11 +125oC, -55oC 2.59 - MHz
NOTES:
1. VDD = 5V, CL = 50pF, RL = 200K
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 5 A
+125oC - 150 A
o o
VDD = 10V, VIN = VDD or GND 1, 2 -55 C, +25 C - 10 A
+125oC - 300 A
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 A
+125oC - 600 A
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, - 50 mV
-55oC
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, - 50 mV
-55oC
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, 4.95 - V
-55oC
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, 9.95 - V
-55oC
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
(Excluding pins 9 & 10)
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
(Excluding pins 9 & 10) o
-55 C 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
(Excluding pins 9 & 10)
-55oC 4.2 - mA
Output Current IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125o C - -0.36 mA
(Source)
-55oC - -0.64 mA
(Excluding pins 9 & 10)
Output Current IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
(Source)
-55o C - -2.0 mA
(Excluding pins 9 & 10)
Output Current IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
(Source)
-55o C - -1.6 mA
(Excluding pins 9 & 10)

FN3317 Rev 0.00 Page 3 of 9

December 1992
CD4060BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Output Current IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
(Source)
-55o C - -4.2 mA
(Excluding pins 9 & 10)
Input Voltage Low VIL VDD = 10V, VOH > 9V, 1, 2 +25oC, +125oC, - 3 V
VOL < 1V -55oC
Input Voltage High VIH VDD = 10V, VOH > 9V, 1, 2 +25oC, +125oC, +7 - V
VOL < 1V -55oC
Drive Current at Pin 9 IOL VDD = 5V, VO = .4V 3 +25oC 0.16 - mA
Oscillator Design
VDD = 10V, VO = .5V 3 +25oC 0.42 - mA
VDD = 15V, VO = 1.5V 3 +25oC -1.0 - mA
o
Drive Current at Pin 9 IOH VDD = 5V 1, 2, 3 +25 C - -.16 mA
Oscillator Design o
VDD = 10V 1, 2, 3 +25 C - -.42 mA
VDD = 15V 1, 2, 3 +25oC - 1.0 mA
Propagation Delay TPHL1 VDD = 10V 1, 2, 3 +25oC - 300 ns
Input Pulse øI to Q4 TPLH1
VDD = 15V 1, 2, 3 +25oC - 200 ns
Propagation Delay TPHL2 VDD = 10V 1, 2, 3 +25o C - 100 ns
QN to QN + 1 TPLH2
VDD = 15V 1, 2, 3 +25oC - 80 ns
o
Propagation Delay TPHL3 VDD = 10V 1, 2, 3 +25 C - 160 ns
RESET o
VDD = 15V 1, 2, 3 +25 C - 100 ns
Transition Time TTHL VDD = 10V 1, 2, 3 +25oC - 100 ns
TTLH
VDD = 15V 1, 2, 3 +25oC - 80 ns
Maximum Input Pulse FØI VDD = 10V 1, 2, 3 +25o C 8 - MHz
Frequency
VDD = 15V 1, 2, 3 +25oC 12 - MHz
Minimum RESET Pulse TW VDD = 5V 1, 2, 3 +25oC - 120 ns
Width o
VDD = 10V 1, 2, 3 +25 C - 60 ns
VDD = 15V 1, 2, 3 +25oC - 40 ns
Minimum Input Pulse TW VDD = 5V 1, 2, 3 +25oC - 100 ns
Width
VDD = 10V 1, 2, 3 +25o C - 40 ns
F = 100kHz
VDD = 15V 1, 2, 3 +25oC - 30 ns
o
RC Operation RX Max RX VDD = 5V, CX = 10F 2, 3 +25 C - 20 M
o
VDD = 10V, CX = 50F 2, 3 +25 C - 20 M
VDD = 15V, CX = 10F 2, 3 +25oC - 10 M
RC Operation CX Max CX VDD = 5V, RX = 500k 2, 3 +25oC - 1000 F
VDD = 10V, RX = 300k 2, 3 +25oC - 50 F
VDD = 15V, RX = 300k 2, 3 +25o C - 50 F
Maximum Oscillator RX = 5k VDD = 10V 2, 3 +25oC 530 810 ns
Frequency (Note 4) CX = 15pF o
VDD = 15V 2, 3 +25 C 690 940 ns
o
RC Operation Variation CX = 200pF VDD = 5V 2, 3 +25 C 18 25 kHz
of Frequency RS = 560K
VDD = 10V 2, 3 +25oC 20 26 kHz
(Unit-to-Unit) RX = 50k
VDD = 15V 2, 3 +25o C 21.1 27 kHz
Variation of Frequency CX = 200pF 5V to 10V 2, 3 +25o C - 2 kHz
with Voltage Change RS = 560K
10V to 15V 2, 3 +25oC - 1 kHz
(Same Unit) RX = 50k

FN3317 Rev 0.00 Page 4 of 9

December 1992
CD4060BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. RC Oscillator applications are not recommended at supply voltages below 7V for RX < 50k.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 A
o
N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1, 4 +25 C -2.8 -0.2 V
N Threshold Voltage VTN VDD = 10V, ISS = -10A 1, 4 +25oC - 1 V
Delta
P Threshold Voltage VPTH VSS = 0V, IDD = 10A 1, 4 +25oC 0.2 2.8 V
o
P Threshold Voltage VTP VSS = 0V, IDD = 10A 1, 4 +25 C - 1 V
Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH > VOL < V
VDD = 3V, VIN = VDD or GND VDD/2 VDD/2

Propagation Delay Time TPHL VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x ns

TPLH +25oC
Limit
NOTES: 1. All voltages referenced to device GND. 3. See Table 2 for +25oC limit.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT
Supply Current - MSI-2 IDD  1.0A
Output Current (Sink) IOL5  20% x Pre-Test Reading
Output Current (Source) IOH5A  20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883
CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

FN3317 Rev 0.00 Page 5 of 9

December 1992
CD4060BMS

TABLE 7. TOTAL DOSE IRRADIATION

TEST READ AND RECORD

MIL-STD-883
CONFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR
FUNCTION OPEN GROUND VDD 9V  -0.5V 50kHz 25kHz
Static Burn-In 1 Note 1 1 - 7, 9, 10, 13 - 15 8, 11, 12 16
Static Burn-In 2 Note 1 1 - 7, 9, 10, 13 - 15 8 11, 12, 16
Dynamic Burn-In Note 1 - 8, 12 16 1 - 7, 9, 10, 13 - 15 11 -
Irradiation Note 2 1 - 7, 9, 10, 13 - 15 8 11, 12, 16
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K  5%, VDD = 18V  0.5V
2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 
0.5V

Logic Diagram
*
ø0 9
* ø1 Q1 ø2 Q13 ø14 Q14
ø 0 10
* FF1 FF2-FF13 FF14
*** ø I 11 ø1 Q1 ø2 Q13 ø14 Q14

Q14

** *
RESET 12

Q4 - Q10
Q12, Q13
**R = HIGH DOMINATES (RESETS ALL STAGES)
VDD *ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
***COUNTER ADVANCES ONE BINARY COUNT NETWORK
ON EACH NEGATIVE - GOING TRANSITION
OF øI (AND øO)

VSS

DETAIL OF TYPICAL FLIP-FLOP STAGE

ø ø
p p

n R n Q
R
ø ø

ø ø
p p
Q
n n
ø ø

FN3317 Rev 0.00 Page 6 of 9

December 1992
CD4060BMS

Typical Performance Curves

AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

15.0
30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
25

10.0
20
10V
15 7.5
10V

10 5.0

5 2.5
5V 5V

0 5 10 15 0 5 10 15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

FIGURE 1. TYPICAL N-CHANNEL OUTPUT LOW SINK FIGURE 2. MINIMUM N-CHANNEL OUTPUT LOW (SINK)
CURRENT CHARACTERISTICS CURRENT CHARACTERISTICS

DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

-15 -10 -5 0 -15 -10 -5 0
0 0
AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 GATE-TO-SOURCE VOLTAGE (VGS) = -5V

-10 -5

-15

-10V -10V
-20 -10

-25

-15V -15V
-30 -15

FIGURE 3. TYPICAL P-CHANNEL OUTPUT HIGH (SOURCE) FIGURE 4. MINIMUM P-CHANNEL OUTPUT HIGH (SOURCE)
CURRENT CHARACTERISTICS CURRENT CHARACTERISTICS
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)

AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC

700

150 600

SUPPLY VOLTAGE (VDD) = 5V 500

SUPPLY VOLTAGE (VDD) = 5V
100 400

300
10V
50 10V
200
15V
100
15V
0 0
0 20 40 60 80 100 0 20 40 60 80 100
LOAD CAPACITANCE (CL) (pF) LOAD CAPACITANCE (CL) (pF)

FIGURE 5. TYPICAL PROPAGATION DELAY TIME (QN TO FIGURE 6. TYPICAL PROPAGATION DELAY TIME (Ø1 TO Q4
QN+1) AS A FUNCTION OF LOAD CAPACITANCE OUTPUT) AS A FUNCTION OF LOAD
CAPACITANCE

FN3317 Rev 0.00 Page 7 of 9

December 1992
CD4060BMS

Typical Performance Curves (Continued)

105
AMBIENT TEMPERATURE (TA) = +25oC 8
6 AMBIENT TEMPERATURE (TA) = +25oC

DYNAMIC POWER DISSIPATION (PD) (W)

4
TRANSITION TIME (tTHL, tTLH) (ns)

104 SUPPLY VOLTAGE (VDD) = 15V

200 8
6
4 10V

SUPPLY VOLTAGE (VDD) = 5V 2

5V
150 10V
103
8
6
4
100
2
10V
102 LOAD CAPACITANCE
15V 8
50 6
CL = 50pF
4
CL = 15pF
2
0 10
0 20 40 60 80 100 2 4 6 8 2 4 6 8 2 4 6 8 2 4 6 8 2 4 6 8
LOAD CAPACITANCE (CL) (pF) 0.1 1 10 102 103 104
INPUT FREQUENCY (føI) (kHz)

FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A
LOAD CAPACITANCE FUNCTION OF INPUT FREQUENCY

Test Circuits

VDD

500F ID

CL
1 16
CL CL
2 15 CX
CL CL
3 14
CL CL
4 13 RS RX
CL
5 12
CL 11 10 9
6 11
CL
7 10
NOTE:
8 9 PULSE RS IS 2RX TO 10RX
GENERATOR T = 2.2 RXCX

12

FIGURE 9. DYNAMIC POWER DISSIPATION TEST CIRCUIT FIGURE 10. TYPICAL RC CIRCUIT

FN3317 Rev 0.00 Page 8 of 9

December 1992
CD4060BMS

Test Circuits (Continued)

11 10 9

C1 RC
RS

C2
NOTE:
CXTAL = C1 + C2 + CSTRAY
RC = Broader frequency
response
RS = Current limiting

FIGURE 11. TYPICAL CRYSTAL CIRCUIT

Chip Dimensions and Pad Layout

Dimension in parenthesis are in millimeters

and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch).

METALLIZATION: Thickness: 11kÅ 14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

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FN3317 Rev 0.00 Page 9 of 9

December 1992