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Microwave

This document provides an overview of flip chip technology as an alternative to traditional wire bonding for semiconductor device packaging. It discusses the advantages of flip chip technology including shorter interconnect lengths, higher reproducibility, and smaller size enabling higher density and performance. The document describes the basic flip chip processes of stud bump bonding and micro bump bonding. It concludes that flip chip interconnect provides a more compact connection with improved electrical performance important for high frequency applications compared to wire bonding.

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64 views17 pages

Microwave

This document provides an overview of flip chip technology as an alternative to traditional wire bonding for semiconductor device packaging. It discusses the advantages of flip chip technology including shorter interconnect lengths, higher reproducibility, and smaller size enabling higher density and performance. The document describes the basic flip chip processes of stud bump bonding and micro bump bonding. It concludes that flip chip interconnect provides a more compact connection with improved electrical performance important for high frequency applications compared to wire bonding.

Uploaded by

Rupa_bangalore
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPS, PDF, TXT or read online on Scribd
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Microwave Device Term

Project

Flip Chip Technology

2005/6/16
Kim Dong Hwan
School of Electrical Engineering and
Computer Science
Seoul National University, Korea
Flip Chip Technology MDCL EE SNU
Contents
• Introduction

• Wire Bonding vs. Flip Chip


interconnect

• Flip Chip Process (SSB & MSB)

• Conclusion

Flip Chip Technology MDCL EE SNU


Introduction
• Advancements in the packaging of semiconductor devices
 traditionally use wire bonds to provide the interconnect from
device to substrate or to other devices
• Along with the rapid advances in microwave and millimeter
wave subsystem development
 a growing interest concerning chip interconnection
techniques has developed.
• The importance of quality of these interconnects
 a large impact on the performance of the entire subsystem,
especially at high frequencies.
• Flip chip offers advantages over traditional interconnect
schemes.
 A smaller overall footprints, better thermal heat transfer
Flip Chip Technology MDCL EE SNU
• Introduction

• Wire Bonding vs. Flip Chip


interconnect

• Flip Chip Process (SSB & MSB)

• Conclusion

Flip Chip Technology MDCL EE SNU


Wire Bonding

Bond ribbon

[Coplanar Waveguide Model]

Wire
length
loss

Flip Chip Technology MDCL EE SNU


Flip Chip Interconnection
Compared to the Bond Wire

MMIC(2mm 50Ω CPW line) Small


Big
CPW

Bump
Motherboar
d on 20Ω -
cm Si wafer
[Flip Chip Interconnection
[EM-Simulation Structure for RF test] of Coplanar MMIC]
Measured
0 Simulated
0
Transmission Loss [dB]

-10
Return Loss [dB]

-5

-20

-10
-30

-40
0 20 40 60 80 100
-15 [Gold(Stud) Bumps attached]
Flip Chip Technology
Freq [GHz] MDCL EE SNU
Ref. Songsub Song
Flip Chip Interconnection

Bump Height ≥ Spacing

☞ The influence of substrate surface -> negligible


{Bump height ≥ Ground to ground spacing of the transmission lines}

Flip Chip Technology MDCL EE SNU


Flip Chip Interconnection
Flip Chip Interconnection Versus Wire Bonding

Insertion loss
Return loss

Beyond 100GHz → Below


0.5dB

Flip Chip Technology MDCL EE SNU


Proximity Effect in Flip-Chip
Structure

 50 Ω CPW (D= 80µ m)


MMIC or

Change in Z0 ( % )
 Alumina substrate
Device

Height of flip-chip
bump (air-gap) ~ 3 % change at
20 µ m
D

Motherboard

Air gap (µ m)

[ E-field distribution for a flip-chip [ Change rate of characteristic impedance as a function


mounted CPW MMIC ] of air-gap for a flip-chip mounted CPW MMIC ]

Ref. Sangsub Song, “The Flip-Chip Mounted MMIC Technology using the
Modified MCM-D Substrate for Compact and Low-Cost W-band Transceivers”
Flip Chip Technology MDCL EE SNU
Why Flip Chip
Technology?
µ - CPW
strip MMIC ~ 650
Wire MMIC µ m
-Bonding
Ground

Via Flip-Chip
Bump
50 ~ 100
µ m
[ Wire-Bonding Technology ] [ Flip-Chip Bonding Technology ]

 Advantages of Flip Chip Bonging


Technology.
 Short Interconnection Length  Better Electrical Performances
 High reproducibility  High Yield & Less Tuning
 Compact size  High Packaging density
 Passive components are made in dielectric substrate such as alumina
Ceramics, SiO2 and BCB  Low Cost
Flip Chip Technology MDCL EE SNU
Comparison
Flip Chip Wire
Technology Bonding
Technology
• High density • Mature Technology
Advantages • High performance • Infrastructure exists
• Noise control • Flexible for new devices
• Thin profile • Flexible for new bonding
• Area array technology patterns
• Small device foot prints
• Self alignment

• Additional Equipment • Additional Equipment


Disadvantag • Additional processes • Additional processes
es • Rework after encapsulation is • Rework is difficult
difficult • I/O limitation
• Die shrink

Flip Chip Technology MDCL EE SNU


• Introduction

• Wire Bonding vs. Flip Chip


interconnect

• Flip Chip Process (SSB & MSB)

• Conclusion

Flip Chip Technology MDCL EE SNU


Stud Bump Bonding
Technology

[Cross-sectional SEM photograph


of the bonding portion by SBB]
[Process flow of the SBB]
Flip Chip Technology MDCL EE SNU
Micro Bump Bonding
Technology

-To cure the resin

[Cross-sectional SEM photograph


of the bonding portion by MBB]
[Process flow of the MBB]
☞ Further requirements for miniaturization
and higher frequency operation
Flip Chip Technology MDCL EE SNU
Conclusion
• The need for smaller packaging

[Wire connection] [Flip Chip Bump Connection]


– Flip chip interconnect process → more compact fashion

• Improved electrical performance


– Reduced interconnect length → lower inductance and reduced signal loss
→ lower power requirements

• The demands of high frequency applications


– Limitation of the wire interconnect → flip-chip bump connection

Flip Chip Technology MDCL EE SNU


References
[1] Mark S. Hauhe, “Flip Chip Technology Vendor Overview,”
[2] R. Sturdivant, “Reducing the effects of the mounting substrate on the
performance of GaAs MMIC flip chips,” in Proc. 1995 Int. Microwave Theory
Tech. Symp. Dig., Orlando, FL, May 1995, pp. 1591-1594.
[3] Hideki Kusamitsu, et al., “The Flip-Chip Bump Interconnection for Millimeter
Wave GaAs MMIC,” IEEE Transactions on Electronics Packaging Manufact-
uring, VOL. 22, NO .1, January 1999.
[4] T. Krems, et al., “Millimeter-Wave Performance of Chip Interconnections Using
Wire Bonding and Flip Chip,” IEEE MTT-S Digest. pp. 247-250.
[5] Hiroyuki Sakai., “High Frequency Flip-Chip Bonding Technologies and Their
Application to Microwave/Millimeter-wave ICs,” IEICE TRANS. Electron., VOL.
E81-C, NO. 6 June 1998.
[6] Kiyomitsu Onodera, et al., “Novel Flip-Chip Bonding Technology for W-Band
Interconnections Using Alternate Lead-Free Solder Bumps,” IEEE Microwave
and Wireless Components Letters, VOL.12, NO. 10, October 2002.
[7] Sangsub Song, “The Flip-Chip Mounted MMIC Technology using the Modified
MCM-D Substrate for Compact and Low-Cost W-band Transceivers” IEEE IMS
2005. Microwave Application Seminars.

Flip Chip Technology MDCL EE SNU


Thank you !

Flip Chip Technology MDCL EE SNU

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