Simulation Design of Impulse Voltage Generator: Himalayal - Shanghai - China
Simulation Design of Impulse Voltage Generator: Himalayal - Shanghai - China
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I. Design Purpose
The data in the Tab.1 are withstand voltage. Both breakdown voltage and
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flashover voltage are higher than test voltage, so the margin coefficient is taken
as 1.3. The insulation ageing will happen to impulse voltage generator if used for
a long time. Therefore, ageing coefficient should be 1.1. Assume that the
efficiency of impulse voltage generator is 85%, nominal voltage of impulse
voltage generator should be higher than
The five stages of this capacitor are in series and the nominal voltage can reach
1100kV, which basically meets the above-mentioned requirements. Each stage is
composed of two reactors in series and make impulse capacitance:
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C1=0.1/5=0.02μF
This value is more than 10C2 so that voltage efficiency is not very low.
2.4 Main parameters of impulse voltage generator
36 s 0.693 Rt 0.0212 F
Make charging resistance R = 10kΩ ; each charging resistor can withstand 110kV
resistance r is 500 k .
voltage charging circuit. Charge to 0.9 times of voltage via calculation method of
simple rectifying charging:
Tcharge = 15(ro + r + nR/2)×nC
ro = r → Tcharge=8s
Given that it takes a little longer time for double voltage circuit to charge,
charging time should be taken 10s.
2.7 Select the power transformer (PT)
PT capacity = 3.0×2×Wn/Tcharge
= 3.0 2 12.1kJ /10s
=7.26kVA
The rated current of silicon stack is calculated via average current. The efficient
value of current is more than the average value.
The rated current of silicon stack should be 0.2A. 2DL-150/0.2 is chosen to form
each rectifier.
2.9 Select the diameter of sphere gap
The discharging voltage of 250mm sphere gap is 112kV when the gap
distance is 40mm. Six couples of 250mmcopper balls are chosen.
3.0 Matlab simulation test
(1) Complete simulation circuit diagram.
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The simplified equivalent charging circuit shown in Fig.4 is used. Fig.7 shows the
equivalent discharging circuit. The initial voltage of C1 is set total voltage 1100kV
of five stages in series while ode45 algorithm is adopted to obtain the initial
voltage of C2. The obtained impulse waveform is shown in Fig. 5.
Charging process simulation:
5
x 10
6
Uc2/V
1
1 2 3 4 5 6 7 8
t/s -5
x 10